AU2003257621A1 - Cleaning method for substrate-processing device and the device - Google Patents

Cleaning method for substrate-processing device and the device

Info

Publication number
AU2003257621A1
AU2003257621A1 AU2003257621A AU2003257621A AU2003257621A1 AU 2003257621 A1 AU2003257621 A1 AU 2003257621A1 AU 2003257621 A AU2003257621 A AU 2003257621A AU 2003257621 A AU2003257621 A AU 2003257621A AU 2003257621 A1 AU2003257621 A1 AU 2003257621A1
Authority
AU
Australia
Prior art keywords
substrate
cleaning method
processing device
processing
cleaning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003257621A
Inventor
Hiroshi Kannan
Yasuhiro Oshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of AU2003257621A1 publication Critical patent/AU2003257621A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
AU2003257621A 2002-08-30 2003-08-20 Cleaning method for substrate-processing device and the device Abandoned AU2003257621A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002252269A JP2004091828A (en) 2002-08-30 2002-08-30 Method for cleaning substrate treatment apparatus, and substrate treatment apparatus
JP2002/252269 2002-08-30
PCT/JP2003/010507 WO2004020693A1 (en) 2002-08-30 2003-08-20 Cleaning method for substrate-processing device and the device

Publications (1)

Publication Number Publication Date
AU2003257621A1 true AU2003257621A1 (en) 2004-03-19

Family

ID=31972729

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003257621A Abandoned AU2003257621A1 (en) 2002-08-30 2003-08-20 Cleaning method for substrate-processing device and the device

Country Status (3)

Country Link
JP (1) JP2004091828A (en)
AU (1) AU2003257621A1 (en)
WO (1) WO2004020693A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019191310A1 (en) * 2018-03-30 2019-10-03 Applied Materials, Inc. Low temperature in-situ cleaning method for epi-chamber
KR102288382B1 (en) * 2019-09-20 2021-08-11 대전대학교 산학협력단 Method for removing of L-FC in plasma etching procedure and system therefor

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63204616A (en) * 1987-02-19 1988-08-24 Fujitsu Ltd Method for cleaning reaction chamber
JPH01138716A (en) * 1987-11-25 1989-05-31 Mitsubishi Electric Corp Method of cleaning inside of container to maintain atmosphere for treating semiconductor
JPH0427117A (en) * 1990-05-22 1992-01-30 Fujitsu Ltd Photo assisted vapor phase growth device
JPH09162165A (en) * 1995-12-04 1997-06-20 Fujitsu Ltd Processing system and cleaning method therefor
JPH09306892A (en) * 1996-05-14 1997-11-28 Hitachi Ltd Cleaning method and semiconductor manufacturing apparatus
JP3670533B2 (en) * 1999-09-27 2005-07-13 株式会社東芝 Substrate processing apparatus and cleaning method thereof
US6453913B2 (en) * 2000-04-27 2002-09-24 Canon Kabushiki Kaisha Method of cleaning a film deposition apparatus, method of dry etching a film deposition apparatus, and an article production method including a process based on the cleaning or dry etching method
JP2002016011A (en) * 2000-04-27 2002-01-18 Canon Inc Method for cleaning deposition film forming device, dry etching method, and method for manufacturing article including step of executing either of the methods

Also Published As

Publication number Publication date
WO2004020693A1 (en) 2004-03-11
JP2004091828A (en) 2004-03-25

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase