WO2004017440A3 - Verringerung des kontaktwiderstandes in organischen feldeffekttransistoren mit palladiumkontakten durch verwendung von phosphinen und metallhaltigen phosphinen - Google Patents

Verringerung des kontaktwiderstandes in organischen feldeffekttransistoren mit palladiumkontakten durch verwendung von phosphinen und metallhaltigen phosphinen Download PDF

Info

Publication number
WO2004017440A3
WO2004017440A3 PCT/DE2003/002379 DE0302379W WO2004017440A3 WO 2004017440 A3 WO2004017440 A3 WO 2004017440A3 DE 0302379 W DE0302379 W DE 0302379W WO 2004017440 A3 WO2004017440 A3 WO 2004017440A3
Authority
WO
WIPO (PCT)
Prior art keywords
phosphines
contact
contact resistance
reduction
field effect
Prior art date
Application number
PCT/DE2003/002379
Other languages
English (en)
French (fr)
Other versions
WO2004017440A2 (de
Inventor
Hagen Klauk
Guenter Schmid
Ute Zschieschang
Marcus Halik
Efstratios Terzoglu
Original Assignee
Infineon Technologies Ag
Hagen Klauk
Guenter Schmid
Ute Zschieschang
Marcus Halik
Efstratios Terzoglu
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag, Hagen Klauk, Guenter Schmid, Ute Zschieschang, Marcus Halik, Efstratios Terzoglu filed Critical Infineon Technologies Ag
Priority to DE50308856T priority Critical patent/DE50308856D1/de
Priority to EP03787668A priority patent/EP1525631B1/de
Publication of WO2004017440A2 publication Critical patent/WO2004017440A2/de
Publication of WO2004017440A3 publication Critical patent/WO2004017440A3/de
Priority to US11/045,511 priority patent/US7208782B2/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H10K85/346—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising platinum
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene

Abstract

Die Erfindung betrifft eine Halbleitereinrichtung mit einer Halbleiterstrecke aus einem organischen Halbleitermaterial, einem ersten Kontakt zum Injizieren von Ladungsträgern in die Halbleiterstrecke und einem zweiten Kontakt zum Extrahieren von Ladungsträgern aus der Halbleiterstrecke, wobei zwischen erstem Kontakt und der Halbleiterstrecke und/oder zwischen zweitem Kontakt und der Halbleiterstrecke eine Schicht eines Phosphins angeordnet ist. Das Phosphin wirkt als Ladungstransfermolekül, das den Übergang von Ladungsträgern zwischen Kontakt und organischem Halbleitermaterial erleichtert. Dadurch kann der Kontaktwiderstand zwischen Kontakt und organischem Halbleitermaterial deutlich verringert werden.
PCT/DE2003/002379 2002-07-31 2003-07-15 Verringerung des kontaktwiderstandes in organischen feldeffekttransistoren mit palladiumkontakten durch verwendung von phosphinen und metallhaltigen phosphinen WO2004017440A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE50308856T DE50308856D1 (de) 2002-07-31 2003-07-15 Verringerung des kontaktwiderstandes in organischen feldeffekttransistoren durch verwendung von phosphinen und metallhaltigen phosphinen
EP03787668A EP1525631B1 (de) 2002-07-31 2003-07-15 Verringerung des kontaktwiderstandes in organischen feldeffekttransistoren durch verwendung von phosphinen und metallhaltigen phosphinen
US11/045,511 US7208782B2 (en) 2002-07-31 2005-01-31 Reduction of the contact resistance in organic field-effect transistors with palladium contacts by using phosphines and metal-containing phosphines

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10234997.5 2002-07-31
DE10234997A DE10234997C1 (de) 2002-07-31 2002-07-31 Verringerung des Kontaktwiderstandes in organischen Feldeffekttransistoren mit Palladiumkontakten durch Verwendung von Phosphinen und metallhaltigen Phosphinen

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US11/045,511 Continuation US7208782B2 (en) 2002-07-31 2005-01-31 Reduction of the contact resistance in organic field-effect transistors with palladium contacts by using phosphines and metal-containing phosphines

Publications (2)

Publication Number Publication Date
WO2004017440A2 WO2004017440A2 (de) 2004-02-26
WO2004017440A3 true WO2004017440A3 (de) 2004-07-29

Family

ID=27763012

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2003/002379 WO2004017440A2 (de) 2002-07-31 2003-07-15 Verringerung des kontaktwiderstandes in organischen feldeffekttransistoren mit palladiumkontakten durch verwendung von phosphinen und metallhaltigen phosphinen

Country Status (6)

Country Link
US (1) US7208782B2 (de)
EP (1) EP1525631B1 (de)
CN (1) CN1672273A (de)
DE (2) DE10234997C1 (de)
TW (1) TWI243497B (de)
WO (1) WO2004017440A2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7372070B2 (en) * 2004-05-12 2008-05-13 Matsushita Electric Industrial Co., Ltd. Organic field effect transistor and method of manufacturing the same
US7208756B2 (en) * 2004-08-10 2007-04-24 Ishiang Shih Organic semiconductor devices having low contact resistance
KR100647683B1 (ko) * 2005-03-08 2006-11-23 삼성에스디아이 주식회사 유기 박막 트랜지스터 및 이를 구비한 평판 디스플레이 장치
US20070102697A1 (en) * 2005-11-10 2007-05-10 Fang-Chung Chen Junction structure of organic semiconductor device, organic thin film transistor and fabricating method thereof
KR101244898B1 (ko) 2006-06-28 2013-03-19 삼성디스플레이 주식회사 유기 박막 트랜지스터 기판 및 그 제조 방법
KR101151159B1 (ko) * 2006-09-19 2012-06-01 삼성전자주식회사 포스페이트계 자기조립단분자막을 포함하는 유기 박막트랜지스터 및 그 제조방법
US20080111131A1 (en) * 2006-11-10 2008-05-15 Nam-Choul Yang Organic thin film transistor, method of fabricating the same, and display device including the same
JP5663925B2 (ja) * 2010-03-31 2015-02-04 ソニー株式会社 固体撮像装置、および、その製造方法、電子機器
CN103378291A (zh) * 2012-04-24 2013-10-30 兰州大学 一种双极型有机光敏场效应管
EP2797133B1 (de) 2013-04-23 2017-01-11 Novaled GmbH Verfahren zur Herstellung eines organischen Feldeffekttransistors und organischer Feldeffekttransistor
DE102015119778A1 (de) * 2015-11-16 2017-05-18 Osram Oled Gmbh Organisches elektronisches Bauelement, Verwendung eines p-Dotierstoffs für ein Matrixmaterial

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001001502A2 (en) * 1999-06-30 2001-01-04 Thin Film Electronics Asa A means for electrical contacting or isolation of organic or inorganic semiconductors and a method for its fabrication
US6335539B1 (en) * 1999-11-05 2002-01-01 International Business Machines Corporation Method for improving performance of organic semiconductors in bottom electrode structure
DE10116876A1 (de) * 2001-04-04 2002-10-17 Infineon Technologies Ag Selbstjustierte Kontaktdotierung für organische Feldeffekttransistoren

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3672125B2 (ja) * 1996-01-26 2005-07-13 ソニー株式会社 光学的素子の製造方法
US5888662A (en) * 1996-11-26 1999-03-30 Motorola, Inc. Modified electrodes for display devices
US6094395A (en) 1998-03-27 2000-07-25 Infineon Technologies North America Corp. Arrangement for controlling voltage generators in multi-voltage generator chips such as DRAMs
US6580127B1 (en) * 1999-09-30 2003-06-17 International Business Machines Corporation High performance thin film transistor and active matrix process for flat panel displays
JP5034139B2 (ja) 2001-02-07 2012-09-26 富士通セミコンダクター株式会社 電圧発生回路および半導体記憶装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001001502A2 (en) * 1999-06-30 2001-01-04 Thin Film Electronics Asa A means for electrical contacting or isolation of organic or inorganic semiconductors and a method for its fabrication
US6335539B1 (en) * 1999-11-05 2002-01-01 International Business Machines Corporation Method for improving performance of organic semiconductors in bottom electrode structure
DE10116876A1 (de) * 2001-04-04 2002-10-17 Infineon Technologies Ag Selbstjustierte Kontaktdotierung für organische Feldeffekttransistoren

Also Published As

Publication number Publication date
WO2004017440A2 (de) 2004-02-26
TWI243497B (en) 2005-11-11
DE50308856D1 (de) 2008-01-31
US7208782B2 (en) 2007-04-24
US20050167703A1 (en) 2005-08-04
EP1525631A2 (de) 2005-04-27
EP1525631B1 (de) 2007-12-19
DE10234997C1 (de) 2003-09-18
CN1672273A (zh) 2005-09-21
TW200406940A (en) 2004-05-01

Similar Documents

Publication Publication Date Title
EP1592048A4 (de) Halbleitersubstrat, feldeffekttransistor und deren herstellungsverfahren
GB2420017B (en) Thin-film transistor substrate, and its production method
TW200620464A (en) Semiconductor device and methods for fabricating the same
WO2004017440A3 (de) Verringerung des kontaktwiderstandes in organischen feldeffekttransistoren mit palladiumkontakten durch verwendung von phosphinen und metallhaltigen phosphinen
EP1620894A4 (de) Substrat, herstellungsverfahren dafür und halbleiterbauelement
TW200705017A (en) Wire structure, method for fabricating wire, thin film transistor substrate, and method for fabricating the thin film transistor substrate
WO2005084175A3 (en) Nanostructures, nanogrooves, and nanowires
TW200509390A (en) Varying carrier mobility in semiconductor devices to achieve overall design goals
WO2007092867A3 (en) Semiconductor device fabricated using a raised layer to silicide the gate
TW200725889A (en) Semiconductor device and method for forming the same
WO2007021390A3 (en) Esd protection structure using contact-via chains as ballast resistors
WO2009001780A1 (ja) 半導体装置およびその製造方法
TW200503268A (en) High voltage metal-oxide semiconductor device
TW200616224A (en) Semiconductor on insulator semiconductor device and method of manufacture
WO2007120291A3 (en) Semiconductor device comprising a transistor having a counter-doped channel region and method for forming the same
MX2007003615A (es) Circuito integrado y metodo de fabricacion.
AU2003240569A8 (en) Method of making an soi semiconductor device having enhanced, self-aligned dielectric regions in the bulk silicon substrate
WO2004042837A3 (de) Organisches elektronisches bauteil mit hochaufgelöster strukturierung und herstellungsverfahren dazu
TW200501381A (en) Parasitic capacitance-preventing dummy solder bump structure and method of making the same
WO2006063145A3 (en) A method for manufacturing a silicided gate electrode using a buffer layer
TW200620558A (en) Semiconductor device and method of manufacturing such a semiconductor device
HK1045024A1 (en) Semiconductor device with deep substrate contacts.
WO2005084342A3 (en) A semiconductor device having a silicided gate electrode and method of manufacture therefor
TW200711139A (en) Organic thin film transistor
WO2000065660A3 (en) A FIELD EFFECT TRANSISTOR OF SiC FOR HIGH TEMPERATURE APPLICATION, USE OF SUCH A TRANSISTOR AND A METHOD FOR PRODUCTION THEREOF

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): CN JP KR US

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): DE FR GB IE IT NL

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2003787668

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 2003818432X

Country of ref document: CN

Ref document number: 11045511

Country of ref document: US

WWP Wipo information: published in national office

Ref document number: 2003787668

Country of ref document: EP

NENP Non-entry into the national phase

Ref country code: JP

WWW Wipo information: withdrawn in national office

Country of ref document: JP

WWG Wipo information: grant in national office

Ref document number: 2003787668

Country of ref document: EP