WO2004015729A1 - Microfabricated relay with multimorph actuator and electrostatic latch mechanism - Google Patents
Microfabricated relay with multimorph actuator and electrostatic latch mechanism Download PDFInfo
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- WO2004015729A1 WO2004015729A1 PCT/US2002/025115 US0225115W WO2004015729A1 WO 2004015729 A1 WO2004015729 A1 WO 2004015729A1 US 0225115 W US0225115 W US 0225115W WO 2004015729 A1 WO2004015729 A1 WO 2004015729A1
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- 230000007246 mechanism Effects 0.000 title abstract description 23
- 239000000463 material Substances 0.000 claims description 136
- 239000000758 substrate Substances 0.000 claims description 76
- 239000012212 insulator Substances 0.000 claims description 42
- 238000010438 heat treatment Methods 0.000 claims description 29
- 230000004044 response Effects 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 12
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 230000001939 inductive effect Effects 0.000 claims description 2
- 230000000694 effects Effects 0.000 claims 3
- 150000001875 compounds Chemical class 0.000 claims 2
- 230000003247 decreasing effect Effects 0.000 claims 1
- 230000008901 benefit Effects 0.000 abstract description 11
- 238000011161 development Methods 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 34
- 238000004519 manufacturing process Methods 0.000 description 22
- 235000012239 silicon dioxide Nutrition 0.000 description 21
- 238000013461 design Methods 0.000 description 18
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 16
- 239000002184 metal Substances 0.000 description 15
- 229910052581 Si3N4 Inorganic materials 0.000 description 13
- 239000004020 conductor Substances 0.000 description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 13
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 12
- 229910052737 gold Inorganic materials 0.000 description 12
- 239000010931 gold Substances 0.000 description 12
- 239000000377 silicon dioxide Substances 0.000 description 12
- 239000011810 insulating material Substances 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 9
- 150000002739 metals Chemical class 0.000 description 9
- 229910052759 nickel Inorganic materials 0.000 description 9
- 239000010453 quartz Substances 0.000 description 9
- 239000004642 Polyimide Substances 0.000 description 7
- 229920001721 polyimide Polymers 0.000 description 7
- 229920000642 polymer Polymers 0.000 description 7
- 230000009471 action Effects 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 238000005452 bending Methods 0.000 description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 4
- 230000007935 neutral effect Effects 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 229910001020 Au alloy Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000003353 gold alloy Substances 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- -1 thicknesses Substances 0.000 description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 239000011149 active material Substances 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 230000002452 interceptive effect Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
- 238000012886 linear function Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052702 rhenium Inorganic materials 0.000 description 2
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910003327 LiNbO3 Inorganic materials 0.000 description 1
- 229910020608 PbNbO3 Inorganic materials 0.000 description 1
- 229910020698 PbZrO3 Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000003467 diminishing effect Effects 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- JUWSSMXCCAMYGX-UHFFFAOYSA-N gold platinum Chemical compound [Pt].[Au] JUWSSMXCCAMYGX-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- INHCSSUBVCNVSK-UHFFFAOYSA-L lithium sulfate Inorganic materials [Li+].[Li+].[O-]S([O-])(=O)=O INHCSSUBVCNVSK-UHFFFAOYSA-L 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000002815 nickel Chemical class 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- RBTVSNLYYIMMKS-UHFFFAOYSA-N tert-butyl 3-aminoazetidine-1-carboxylate;hydrochloride Chemical compound Cl.CC(C)(C)OC(=O)N1CC(N)C1 RBTVSNLYYIMMKS-UHFFFAOYSA-N 0.000 description 1
- 229910052861 titanite Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H57/00—Electrostrictive relays; Piezoelectric relays
- H01H2057/006—Micromechanical piezoelectric relay
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H61/00—Electrothermal relays
- H01H2061/006—Micromechanical thermal relay
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H57/00—Electrostrictive relays; Piezoelectric relays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H61/00—Electrothermal relays
- H01H61/02—Electrothermal relays wherein the thermally-sensitive member is heated indirectly, e.g. resistively, inductively
Definitions
- a provisional utility patent application describing this device is 60/243,786, filed 10/27/2000 and bearing the same as the present application.
- a second application, describing a related device is 60/243,788, also filed on 10/27/2000 and titled "Microfabricated Double-Throw Relay with Multimorph Actuator and Electrostatic Latch Mechanism.”
- Each of these provisional utility patents relate to aspects of the present invention and are hereby incorporated by reference.
- This invention pertains to the general field of switching devices, and more specifically, to the field of microfabricated relays. Since the original concept of a microfabricated switching device was created by Petersen in 1979, many attempts have been made to develop switches and relays for applications of low power and high frequency. The goal of this work is to improve the cost-effectiveness and performance of switching technologies by using miniature, batch-fabricated, photolithographically-defined, moveable structures as part of a mechanical device.
- Microfabricated electromechanical systems promise high lifetimes, low cost, small sizes, and faster speeds than switching devices manufactured by conventional means, and offer higher performance than solid-state devices.
- switching devices with certain qualities are required or preferred. Specific values vary by application and are quantified where appropriate in the detailed description of the invention:
- Electrostatically actuated devices employ two (or more) bias electrodes across which a voltage is applied. Opposite charges are generated on the surfaces of the facing electrodes, and an electrostatic force is generated. If the bias electrodes are allowed to deflect towards each other, actuation is enabled. The switch or relay contact electrodes in an electrostatically actuated device would be mechanically coupled to these moving bias electrodes, so that the contact electrodes would mate together or separate as the voltage was applied and removed.
- Electrostatic actuation intrinsically supports a number of the operating qualities described, and, as a result, is the most widely examined MEMS actuation mechanism for switches and relays. Electrostatic actuators enable Ohmic-contact relays and switches, although low resistances are difficult to achieve. They require effectively zero power to toggle states and effectively zero power to maintain states. A designer can employ microfabrication techniques to develop precise, low-cost electrostatic actuators. These actuators can provide high speeds, but high closure force is difficult to achieve, and they are not amenable to developing high opening forces. These actuators are difficult to design with low drive voltages (less than 10 N) typical of modern integrated circuits, though drive currents are typically negligible (less than 1 ⁇ A).
- Zavracky U.S. Pat. No. 5,638,946 adds a novel element for actuation, using separate fixed electrodes for biasing, after his early work in solid metal switches.
- the literature includes switching device work by Milanovi, et al. wherein devices are transferred from one substrate to another for improved high-frequency signal switching.
- Bimorph actuators unlike electrostatic actuators, transduce the control signals into mechanical deformation within the actuator itself.
- Bimorph (or, more generally, multimorph) actuators are comprised of layers demonstrating different physical responses to a particular stimulus.
- a thermal bimorph might have a first layer with a high coefficient of thermal expansion (above 10 ppm/°C) and a second layer with a low coefficient of thermal expansion (below 5 ppm/°C).
- this bimorph is exposed to an increase in temperature, the relative expansion of the first layer is. constrained by the intimate contact to the second layer, and the actuator curls in response. Devices employ this curl to perform work, and the forces generated by bimorphs can be much higher than those attainable by electrostatic actuators.
- Bimorph actuation also intrinsically supports a number of the operating qualities described above, and, as a result, is the second most widely examined MEMS actuation mechanism for switches and relays. They can be used in Ohmic-contact devices, and the high forces generated by bimorph actuators result in low contact resistances. They can be designed to actuate with low power to toggle states, though only certain types of bimorphs allow for low power state latching. Bimorph actuators can be made to provide high speeds and high closure force, and can be designed to provide similarly high opening forces and speeds. Some types of bimorph actuators can also be designed with low drive voltages and low drive currents.
- the advantage of such devices is an increase in closure force and reduction in drive voltage, at the penalty of heightened complexity and requiring simultaneous driving of both actuation mechanisms for proper relay functionality.
- Multimorph actuators are used primarily because of their capacity to generate large forces for any given drive power, voltage, or electric current. Electrostatic actuators are used because of their capacity to use very low powers for actuation and holding switches or relays in an open or closed position. There has been a desire in the community to develop devices that incorporate large forces for reliable contacts while using low power, but no previous effort has been successful. This invention is the first attempt to achieve this goal, and does so by incorporating both high-force multimorph actuation with zero-power electrostatic latching mechanisms. [020] The operation of the invention allows for different stable states for the device.
- the first state is a passive state, which is the natural condition of the relay when no control signals are applied to the device.
- a drive control signal is applied to the relay actuator(s), where the mechanical limitations of the device prevent further deflection of the relay armatures.
- a latch control signal is applied to capacitive elements to attract them and hold them together with electrostatic forces. It is then possible to remove the drive control signals from the actuator, and the relay will remain latched. Removal of the latch control signal can then send the relay back to the passive state.
- Milli-, m is the standard S.I. prefix for one one-thousandth (1/1 ,000).
- Micro-, ⁇ is the standard S.I. prefix for one one-millionth (1/1 ,000,000).
- Nano-, n is the standard S.I. prefix for one one-billionth (1/1,000,000,000).
- N is a standard S.I. unit of force equal to one kilogram-meter-per-second-squared.
- Micron, ⁇ m, or micrometer is a unit of length equal to one-one-thousandth of a millimeter.
- Microfabrication is defined as a fabrication method of defining components delineated through photolithographic techniques made popular by the integrated circuit developer community.
- Micromachining is defined as the action of delineating a microfabricated element that has been photolithographically defined, often performed by an etching process using acids or bases .
- An actuation is defined as the action of opening or closing a relay or other switching device.
- An actuator is defined as the energy conversion mechanism responsible for actuation.
- An armature is defined as any element that is deflected or moved by an actuator in order to open or close a relay or other switching device.
- a multimorph is defined as an actuator comprised of a combination of layers that change size when exposed to a stimulus, the size changes varying for two or more different layers.
- a bimorph is defined as a multimorph with exactly two layers.
- a multimorph layer is defined as any one layer of a. multimorph, where each specific layer may or may not be sensitive to the drive stimulus defined for the multimorph.
- a piezoelectric multimo ⁇ h is defined as a multimo ⁇ h actuator sensitive to electric voltage stimuli, wherein one or more layers have non-zero coefficients of piezoelectricity.
- a thermal multimo ⁇ h is defined as a multimo ⁇ h actuator sensitive to heat or cold stimuli, wherein one or more layers have non-zero coefficients of thermal expansion.
- a buckling multimo ⁇ h is defined as a multimo ⁇ h actuator sensitive to deflection stimuli,
- a fixed base is defined as a rigid, integral relay region that provides mechanical support.
- a base substrate is defined as a microfabrication substrate forming one part of a fixed base.
- a load signal is defined as the signal to be switched by a relay or other switching device.
- a load signal line is defined as a port (input or output) for the load signal to be switched.
- An armature contact element is defined as an element located on an armature that physically engages and/or disengages with other contact elements in order to form and/or break a conductive path for a load signal to progress from an input to an output load signal line.
- a contact armature is defined as an armature that has attached armature contact elements.
- a base substrate contact element is defined as an element located on a base substrate that physically engages and/or disengages with other contact elements in order to form and/or break a conductive path for a signal to progress from an input to an output load signal line.
- a drive signal is defined as a signal that initiates the actuation of a relay or switch.
- a drive signal line is defined as a line upon which is directed a drive signal. At least two drive signal lines are necessary for electric drive signals, one for the signal and one for reference.
- a latch signal is defined as a signal that holds a relay or switch in an open or closed state.
- a latch signal line is defined as a line upon which is directed a latch signal. At least two latch signal lines are necessary for electric latch signals, one for the signal and one for reference.
- An armature electrode is defined as a conductive area attached to the armature, upon which latch signals or their references are directed.
- a base substrate electrode is defined as a conductive area attached to the base substrate, upon which latch signals or their references are directed.
- a latch electrode insulator is defined as an insulating region preventing electrical contact from occurring between the armature electrode and the base substrate electrode.
- This invention covers switching speeds and signal loads that are generally small compared to relay industry standards.
- a functional distinction between ⁇ A and mA, for example, is not made with regards to load signal strength for conventional relays, whereas the performance and design differences of microfabricated relays for these different load signals can be significant.
- the following speeds and signal loads are defined, noting that these classifications differ from those defined in relay industry standards:
- Very fast switching times are defined as less than 100 nsec.
- Fast switching times are defined as 100 nsec to 1 ⁇ sec.
- Moderate switching times are defined as 1 ⁇ sec to 100 ⁇ sec.
- Slow switching times are defined as 100 ⁇ sec to 10 msec.
- Very slow switching times are defined as greater than 10 msec.
- Very low signal loads are defined as less than 10 ⁇ A DC current or 100 ⁇ W RF power.
- Low signal loads are defined as 10 ⁇ A to 10 mA or lOO ⁇ W to 100 mW.
- Moderate signal loads are defined as 10 mA to 500 mA or 100 mW to 5 W.
- High signal loads are defined as 500 mA to 5 A or 5 W to 50 W.
- Very high signal loads are defined as greater than 5 A of DC current or 50 W of RF power.
- Figure 1 is a plan-view illustration of one embodiment of the invention with cross- sectional lines and views provided for clarity, and with many elements that may be buried below the top surface shown in dashed outline.
- Two cross-sections shown along with Fig. 1 ' are Figs. 2A and 3A, which illustrate view of a load armature and actuator armature, respectively.
- Figure 4 pictures a cross-sectional schematic of the armatures in the region of a multimo ⁇ h actuator, to illustrate the relationship between electrical connections.
- Figures 5A and 5B show the cross-sections of the relay region with the latching and contact mechanisms in open and closed relay states, respectively. The bending function of a contact armature is illustrated in Fig. 5B, which depicts the relay is in a fully closed and latched state.
- Figures 2A, 2B, and 2C illustrate cross-sectional views of the load armature in three operational states of the device.
- Figure 2A is the load armature when the relay is in the passive state.
- Figure 2B illustrates the curvature induced in the armature when a relay is driven into an active state.
- Fig. 2C illustrates a curvature induced in the relay when in the latched state.
- Figures 3A, 3B, and 3C illustrate cross-sectional views of a piezoelectric multimo ⁇ h actuator armature in the same three operational states of the device.
- Figure 3 A is the actuator armature when the relay is in the passive state.
- Figure 3B illustrates the curvature induced in the actuator armature when a relay is driven into an active state.
- Armature electrode contact is seen in Fig. 3C, which illustrates a possible curvature induced in the actuator armature when in the latched relay state.
- Figures 6 through 10 illustrate an alternative embodiment.
- Figure 6 is a functional plan-view illustration of an embodiment employing a thermal multimo ⁇ h as a primary actuator.
- Two cross-sections shown along with Fig. 6 are Figs. 7A and 8A, which illustrate cross-sectional views of a load armature and thermal multimo ⁇ h actuator armature, respectively.
- Figure 9 pictures a cross-sectional schematic of the armatures in the region of a multimo ⁇ h actuator.
- Figs. 10A and 10B show the cross-sections of the relay region with the latching and contact mechanisms in open and closed relay states, respectively.
- Figures 7A, 7B, and 7C illustrate cross-sectional views of the load armature in three operational states of the device.
- Figure 7A is the load armature when the relay is in the passive state.
- Figure 7B illustrates the curvature induced in the armature when a relay is driven into an active state.
- Figure 7C illustrates a curvature induced in the relay when in the latched state.
- Figures 8A, 8B, and 8C are cross-sectional views of a thermal multimo ⁇ h actuator armature in the same three operational states of the device.
- Figure 8A is the actuator armature when the relay is in the passive state.
- Figure 8B illustrates the actuator armature when the relay is driven into an active state.
- Armature electrode contact is seen in Fig. 8C, which illustrates a possible curvature induced in the actuator armature when in the latched relay state.
- the relay can be comprised of multiple actuator armature structures, as illustrated in Fig. 11. This relay is shown with the actuator armatures perpendicular to the load armature. Such configurations with different numbers of actuator armatures or load armatures are largely at the decision of a designer skilled in the art.
- Figure 12 illustrates a cross-sectional schematic of the load armature of this embodiment.
- Figures 13A, 13B, 13C, and 13D are cross-sectional schematic illustrations of the actuator armatures of the relay in four operational states of this embodiment. Each figure depicts the thermal actuator armatures responsible for actuation to close the device and those responsible for actuation to open the device, as well as the contact armature region surrounding the contact electrodes.
- Figure 13 A depicts the actuator armatures when the relay is in the passive state.
- Figure 13B illustrates the curvature induced in the actuator armatures when a relay is driven into an active state.
- Figure 13C illustrates the actuator armatures when in the latched state.
- Figure 13D illustrates the actuator armatures when one armature is driven into a drive open state.
- This invention is a new type of relay that inco ⁇ orates the functional combination of multimo ⁇ h actuator elements with electrostatic state holding mechanisms in the development of a micromachined switching device.
- This combination of elements provides the benefits of high-force multimo ⁇ h actuators with those of zero-power electrostatic capacitive latching in microfabricated relays with high reliability and low power consumption. The following description first discusses this functional combination of actuator technologies, then continues with a detailed discussion of several specific embodiments of this invention.
- a relay is a switching device with the added characteristic of having the control signal path isolated from the load signal path. Such a device enables the switching of varied or sensitive signals without interference from the control signals which might have fluctuations or irregularities capable of degrading the integrity of a sensitive load signal (such as a data stream or test equipment signal). This also protects control electronics in applications where the load signal might be dangerous in some form; a high voltage or high current load signal might overload the control electronics if allowed to interact with the control signal paths. Radio-frequency devices often require high isolation of the control electronics from the signal loads, as RF power cannot be perfectly contained due to capacitive or inductive coupling. Most relays have two stable operational states defining whether the load signal circuit is either 1) open or 2) closed. Such a device forms a valuable component in a wide variety of applications in direct current, low frequency, and radio frequency applications, and the many efforts to create microfabricated versions of relays attest to the industry interest.
- Multimo ⁇ h actuation mechanisms have been featured in switching devices for decades due to their ability to generate comparably high forces (mN to N contact forces) at high speeds ( ⁇ sec to msec actuation times) over moderate distances (tens of ⁇ m to mm of armature deflection) with moderate power requirements (tens of ⁇ W to tens of mW for continuous operation).
- Multimo ⁇ h actuator technology is employed in this invention to generate moderate contact forces in order to reliably make and break electrical load signal contacts.
- multimo ⁇ h actuator technologies can have several of the significant disadvantages discussed in the background section. Some technologies require constant power to maintain, for example, whereas others demonstrate weakening, unreliability, or failure if an actuator drive signal or relay state is maintained for an extended period of time (seconds to years).
- this invention couples a secondary mechanism with the multimo ⁇ h actuator in order to provide a low-power, nondestructive alternative for holding the relay state.
- Electrostatic actuation has long been a core technology in the microfabricated actuator community for its low power consumption (nW to ⁇ W) and fast closure times (100 nsec to 100 ⁇ sec).
- the forces (1 ⁇ N to 0.5 mN) and actuator travel distances (one to ten ⁇ m) typical for these devices is very limited, however, and most electrostatic relay efforts suffer accordingly in terms of relay insertion loss, reliability (both related to contact force), isolation, and standoff voltage (both related to gap separation).
- This invention is superior to prior microfabricated relays because two actuation technologies are combined to utilize the advantages of each.
- the electrostatic actuator is used to hold the device in one state, with the majority of the work required to attain that state performed by the comparably powerful multimo ⁇ h actuator.
- the advantages of each actuator are realized, with the disadvantages of each eliminated.
- This invention discusses microfabricated relays with overall planar dimensions of total width and length between 10 ⁇ m and 10 mm.
- the planar dimensions selected for a particular design would be primarily dependent on the required speed and the power level of the signal load to be switched, with ranges previously defined. Devices requiring fast or very fast switching would be designed at the low end of size ranges given, whereas devices handling high or very high signal loads would have sizes near the high end of the ranges recommended.
- a device according to the invention and intended for use with low to moderate signal loads and moderate to fast switching speeds may have planar dimensions of between 75 ⁇ m and 1.5 mm. Such dimensions might be appropriate for medium-range wireless communicators, transmit phased-array antenna electronics, or general telecommunications switching applications. It is contemplated in applications where high or very high signal load switching is required and slower speeds are acceptable, such as general p pose industrial relays or high power RF systems, that the overall planar dimensions for devices according to this invention could be between 0.5 and 10 mm.
- Figure 1 is a functional plan- view schematic of one general class of embodiments of this invention, wherein one cantilever load armature and one cantilever actuator armature are fixed at a common end and free to deflect at the opposing end, these free ends being mechanically coupled together by means of a contact armature.
- Figure 1 is not a true plan- view schematic, as elements such as electrical connections and electrodes that may be buried within the device are depicted. If the fixed elements were constructed of transparent material, and conductors block line of sight through the device, the view provided by Fig. 1 would be accurate. Elements are shown with consistent cross-hatching even in plan-view, and elements below the surface are shown with a dashed outline rather than with a solid outline.
- FIG. 1 Two cross-sections shown along with Fig. 1 are Figs. 2A and 3A, which illustrate the load armature and actuator armature, respectively.
- Figure 4 is a cross-sectional schematic of the armatures in the general region of a multimorph actuator, to illustrate electrical connections and insulators.
- Figures 5 A and 5B show cross-sections of the region with the latching and contact mechanisms in open and closed relay states, respectively. The bending of a contact armature is illustrated in Fig. 5B, which depicts the relay is in a fully closed and latched state.
- a fixed base (101) is a region that is rigid and integral, which may consist of a number of semiconductor, metallic, or dielectric elements that are fixed together to provide mechanical strength. The overall size of the fixed base can help define the maximum size of the attached relay and its load signal handling capabilities.
- a base substrate (102) comprises one part of the fixed base, which may consist of one or more microfabrication-capable dielectric or semiconductor materials such as glass, polyimide or other polymer, alumina, quartz, gallium arsenide, or silicon.
- the base substrate in this embodiment is polished quartz, 250 ⁇ m thick and 1 mm in each planar dimension, providing for a rigid base of microfabrication-quality material that is sufficiently large to permit ease of automated manufacture, packaging, and system insertion.
- first load signal line (103) and a second load signal line (104) that represent the electrical paths of the input and output of the signal to be switched by the device.
- first drive signal line (105) and a second drive signal line (106) the leads across which a drive signal to actuate the device is given. It is envisioned that in many devices according to this invention, the drive signal lines will be electrical paths.
- first latch signal line (107) and a second latch signal line (108) that are the leads across which a latch signal to latch the device state is given. As the latching mechanism employed in this invention is electrostatic attraction of capacitive electrodes, this latch signal is a voltage difference across the first latch signal line and the second latch signal line and are therefore electrical paths.
- the load signal lines are manufactured of 4 ⁇ m thick plated gold alloy for low relay electrical resistance, having a nickel adhesion and plating layer 0.4 ⁇ m thick.
- a metallization is sufficiently thick and of sufficiently low resistivity to permit low-loss lines for light to moderate load signals, and the nickel provides a plating layer while not considerably interfering with the electrical performance of the gold.
- the control signal lines and latch signal lines of this embodiment may be manufactured of the 0.4 ⁇ m nickel material without the plated gold. No load power is transmitted in the control and latch signal lines, so the low resistivity of the gold may not be needed, and lower manufacturing costs may be realized by its omission.
- Gold may be important for device packaging processes, such as wire bonding or flip-chip attachment, and in such instances gold plating may be used.
- one set of materials that can be used for any electrical path, line, or electrode element is a set of conductive materials, also called conductors.
- Conductors used to manufacture relay elements according to this invention may be selected from those materials having a low resistivity, defined as having a resistivity equal to or less than 0.2 ohm-centimeter, equivalent to that of a heavily doped semiconductor.
- the materials that could be used include metals such as gold, copper, silver, platinum, nickel, and alurninurn.
- the materials that could be used include doped semiconductors such as silicon, gallium arsenide, silicon germanium, and indium phosphide. It is also contemplated that any alloy or combination of metals or semiconductors with an overall low resistivity could be employed.
- the material thicknesses for electrical paths in devices according to this invention might range from 0.1 to 100 ⁇ m, depending on the application and available manufacturing techniques. It is further contemplated that the thickness of one electrical path or line in one device according to this invention could differ substantially from the thickness of a second electrical path or line in the same device due to differing electrical and manufacturing requirements. It is generally recognized to those skilled in the art that the electrical resistance of any path is related to its resistivity, its thickness, its width, and its total length. As a result, power savings can be obtained by selecting materials and geometries in a way as to reduce path resistance, particularly for signal loads of high and very high powers. Use of materials that have a high resistivity and small width and thickness can result in Joule's Heating of relay elements, and can increase signal loss within the device.
- the material thickness of a path could range between 0.1 and 3 ⁇ m for a device according to the invention and intended for use with low signal loads and fast switching times. Such a path would be light, thin, and of higher resistance as compared to thicker paths of the same width and material, and considered useful in applications switching low or very low load signal powers. In applications with moderate signal loads and switching times, it is contemplated that the material thickness of an electrical path could range between 0.5 and 15 ⁇ m, depending on the resistivity and width of the path.
- an actuator armature (109) is suspended from a region of the fixed base of Figs. 1 and 3A. This actuator armature is in the form of a cantilever with one region fixed (110) and one region free to deflect (111).
- armatures are constructed of one or more layers of microfabrication-capable materials such as silicon, silicon dioxide, silicon nitride, gallium arsenide, quartz, polyimide or other polymer, or a metal.
- the actuator armature of the discussed embodiment contains a layer of silicon dioxide 8 ⁇ m thick, selected for ease of microfabrication by chemical vapor deposition or spin-on glass techniques, and to provide an insulating rigid armature structure.
- the vertical stiffness of a cantilever beam is approximately linear with the width of the beam, related to a third-order degree with respect to thickness, and to an inverse third-order degree with respect to length.
- the thickness and length are of greater design importance than width for a beam that is expected to deflect in a vertical direction normal to the substrate.
- the overall thickness of such an armature might range from 0.2 ⁇ m to 1 mm, depending on the application, the length, and the fabrication technology used in manufacture. It is reasonable to expect an armature in a device according to this invention could have a length between 5 ⁇ m and 5 mm.
- the actuator armature of the presently discussed embodiment is 40 ⁇ m wide and 180 ⁇ m long, providing sufficient width to reduce the line resistance and sufficient length for flexibility of the armature.
- an armature can range from 0.2 to 4 ⁇ m in thickness and between 5 and 50 ⁇ m in length. In a device designed for low to moderate signal loads with fast to moderate switching speed, it is considered that an armature can range from 1 to 40 ⁇ m in thickness, and between 25 and 500 ⁇ m in length. It is contemplated that in an application requiring moderate to high signal loads with moderate to slow switching speed, an armature thickness can range from 10 to 400 ⁇ m in thickness and between 100 ⁇ m and 2 mm in length.
- the armature could be between 200 ⁇ m and 1 mm in thickness and between 1 and 5 mm in length.
- the discussed armature size ranges apply not only to armatures and other elements of solid rectangular design, but also to armatures or other elements that vary in one or more dimensions by a linear or non-linear function.
- An example of such an armature would be a load armature that tapers from one width to a smaller width at the free end; it is recognized that such a structure may be of interest in RF applications as it can reduce input reflections and provide a higher performance than might a rectangular load signal armature.
- FIG. 3A is a side view schematic of a multimo ⁇ h actuator armature in a passive state.
- a multimo ⁇ h is an element composed of two or more layers of material with different properties; the bimo ⁇ h illustrated is a multimo ⁇ h with exactly two such layers.
- the material layers of a multimo ⁇ h actuator each change by a different amount when exposed to a stimulus.
- the stimulus In the case of a piezoelectric or thermal multimo ⁇ h actuator, the stimulus would be applied voltage or heat, respectively.
- the stimulus In the case of a buckling actuator, the stimulus would be a mechanical deformation in the direction of buckling sensitivity that would be magnified by the ensuing physical action of the buckling element.
- layers are rigidly connected along one or more faces, so the different expansions of the materials tends to curve the multimo ⁇ h in a direction away from the layer or layers with the greatest expansion.
- the multimo ⁇ h actuator illustrated in Figs. 1 and 3 A comprises two materials (113) and (114). Each of the two materials of the multimo ⁇ h changes by a different amount due to a given stimulus.
- the multimo ⁇ h is a piezoelectric bimorph, wherein the materials have differing coefficients of piezoelectricity. It is contemplated that in this embodiment, material (113) would have the highest coefficient of piezoelectricity out of the two materials, with element (114) representing a piezoelectrically neutral material.
- the piezoelectric actuator of this embodiment is formed from a 12 ⁇ m thick lead zirconate titanate (PZT) ceramic layer atop a 6 ⁇ m thick silicon dioxide layer, amounts sufficient to forcefully curl the actuator armature with readily achievable actuation voltages.
- PZT lead zirconate titanate
- piezoelectric multimo ⁇ h actuators employed by devices according to this invention could include piezoelectrically active materials manufactured of out of a ceramic such as barium titanite (BaTiO 3 ), barium titanate (BaTiO), lead niobate (PbNbO 3 ), lead titanate (PbTiO), lead zirconate (PbZrO 3 ), lead zirconate titanate ("PZT” or PbZr x Ti y 0 3 ), or out of a piezoelectrically-active single crystal such as quartz (SiO 2 ), lithium sulfate (Li 2 S ⁇ ), lithium niobate (LiNbO 3 ), or zinc oxide (ZnO).
- a ceramic such as barium titanite (BaTiO 3 ), barium titanate (BaTiO), lead niobate (PbNbO 3 ), lead titanate (PbTiO), lead zirconate (
- piezoelectric multimo ⁇ h actuators employed by devices according to this invention could include one or more multimo ⁇ h layers manufactured of an insulating material such as silicon dioxide (SiO ), quartz, silicon nitride (Si ⁇ N y ), or undoped silicon.
- an insulating material such as silicon dioxide (SiO ), quartz, silicon nitride (Si ⁇ N y ), or undoped silicon.
- the presently discussed embodiment employs a previously discussed silicon dioxide armature layer as element (114).
- piezoelectric multimo ⁇ h actuators employed by devices according to this invention could employ piezoelectrically-active materials with a different sensitivity to that of other multimo ⁇ h layers.
- one or both elements (113) and (114) may be comprised of multiple layers of materials having zero or non-zero coefficients of piezoelectricity.
- the material thicknesses of elements (113) and (114) might range from 0.5 ⁇ m to 1 mm, depending on the application, material, other actuator dimensions, and the fabrication technology used in manufacture. In devices according to this invention for applications requiring low to very low signal loads and high to very high switching speeds, it is considered that elements (113) and (114) can range from 0.5 to 6 ⁇ m in thickness. It is contemplated that in an application requiring moderate multimo ⁇ h actuator thicknesses and associated capabilities that elements (113) and (114) can range from 4 to 80 ⁇ n ⁇ in thickness. It is further contemplated that some embodiments of this invention requiring high forces for high to very high signal loads, allowing for low to very low switching speeds, may require actuators with elements (113) and (114) ranging between 50 ⁇ m and 1 mm in thickness.
- the drive signal required for actuation would be a voltage difference across the thickness or width of the piezoelectric material.
- Figures 1 and 3 A illustrate one possible configuration for the drive signal lines of a piezoelectric bimo ⁇ h.
- the drive signal lines are fabricated atop a region of the fixed base protruding above the planar surface of the base substrate. It is contemplated that in other devices according to this invention that the drive signal lines may be fabricated directly atop an electrically insulated region of the base substrate.
- Figure 3A depicts drive signal connections (140) and (141) to the top and bottom surfaces of the piezoelectric material (113), respectively.
- drive signal connections (140) and (141) are attached to the second and first drive signal lines, respectively.
- the upper first drive signal connection (140) is readily visible in Fig. 1 extending from the second drive signal path to the piezoelectric bimo ⁇ h material.
- the lower second drive signal connection (141) from the first drive signal path disappears beneath the piezoelectric material.
- an armature electrode (115), which is electrically attached to the first latch signal line by a conductive first latch signal path (116).
- a base substrate electrode (117), which is electrically attached to the second latch signal line by a conductive second latch signal path (118).
- the latch signal is a voltage difference
- the armature electrode, base substrate electrode, and their conductive paths to the first and second latch signal lines will be electrical paths.
- conductors may be used to fabricate the armature electrode and base substrate electrode. It is similarly considered that material thicknesses for the armature electrodes and base substrate electrodes of devices according to this invention might range between 0.1 to 100 ⁇ m, depending on the application and material as previously discussed.
- the planar area of the armature electrode and the base substrate electrode is expected to be between 25 ⁇ m 2 and 25 mm 2 each. It is contemplated that for some devices according to this invention, the planar area of the armature electrode will be at least one half of the planar size of the multimo ⁇ h actuator upon which the actuator electrode is positioned.
- the area shape of the electrodes in some devices according to this invention are envisioned to be squares, rectangles, circles, or some combination of planar geometric figures.
- the armature electrode and base substrate electrode may each be between 25 and 500 ⁇ m 2 in planar area. In devices with small overall size, such as those handling low signal loads with fast switching speeds, the armature electrode and base substrate electrode may each be between 300 and 50,000 ⁇ m 2 in planar area. It is additionally contemplated that in other devices according to this invention having moderate size, the armature electrode and base substrate electrode would each range between 30,000 ⁇ m and 2 mm in planar area. If a particular device requires large areas to generation electrostatic latching signals on the order of 1 mN or greater, it is contemplated that the armature electrode and base substrate electrode might each range from 1 to 25 mm 2 in planar area.
- Low resistance transmission lines such as the gold load signal line of the presently discussed embodiment is not generally necessary for an electrostatic capacitive electrode. No appreciable DC current is needed to develop or dissipate a voltage across capacitive electrodes. By eliminating thick metal where it is not needed, the overall size and weight of the relay can be reduced to improve switching speed.
- Each of the latch electrodes for the presently discussed embodiment are 10,000 ⁇ m 2 in rectangular area, and these electrodes as well as the latch and control signal lines are fabricated from nickel 0.4 ⁇ m thick. This nickel is the same as that used as the plating plane for the gold load signal lines, which simplifies manufacturing.
- a latch electrode insulator may be used to prevent electrical contact from occurring between the armature electrode and the base substrate electrode when the armature is deflected.
- the latch electrode insulator would be fabricated of an insulating material, where an insulating material is defined as a material with a resistivity at or above 10 ohm-centimeter.
- the electrode insulator of the present embodiment consist of a layer of silicon nitride 0.1 ⁇ m thick, due to the availability of high-quality thin silicon nitride films.
- insulating materials that may be used for a latch electrode insulator could include insulating microfabrication materials such as undoped silicon, silicon nitride, silicon dioxide, quartz, or polyimide or other insulating polymer. It is contemplated that the material used for a latch electrode insulator may be thin relative to other material layers used in a device according to this invention, with a range from 0.05 to 2 ⁇ m thick. It is contemplated that the material thickness of a latch electrode insulator in some devices having very low to moderate actuator sizes could range between 0.05 and 0.4 ⁇ m.
- the thickness of a latch electrode insulator could be between 0.3 and 2 ⁇ m.
- the latch electrode insulator is envisioned as being affixed to the top surface of the base substrate electrode. In another device according to this invention, it is recognized that the latch electrode insulator could be affixed to the lower surface of the armature electrode.
- the latch electrode insulator could be suspended between the electrodes and mechanically attached to the relay structure at its edges by some method. It is considered that the electrodes and insulator need not be a continuous film like a membrane, but may be in a hole, line, or grid pattern in different devices, provided they are ultimately mechanically coupled to the fixed base.
- armatures may be constructed of layers of microfabrication-capable materials such as silicon, silicon dioxide, silicon nitride, gallium arsenide, quartz, polyimide or other polymer, or metals.
- the actuator armature of the discussed embodiment inco ⁇ orates a layer of silicon dioxide 8 ⁇ m thick, selected to provide an insulating rigid armature structure that is compatible with microfabrication techniques.
- the thickness and length of a multimo ⁇ h actuator armature are of greater design importance than width for a beam that is expected to deflect in a vertical direction normal to the plane of the substrate.
- the load armature of the discussed embodiment is 180 ⁇ m long and 25 ⁇ m wide.
- an armature contact element 120
- the armature contact element, conductive path, and first load signal line are of similar materials and thicknesses for simplified manufacturing.
- the armature contact element is of a different material and thickness than the conductive path and first load signal line in order to improve mechanical and electrical properties of the contact itself.
- the armature contact element, conductive path, and first load signal line are of different and varying materials and thicknesses for reasons related to improved performance or ease of fabrication.
- the armature contact element path of the discussed embodiment is a gold alloy, 5 ⁇ m thick
- the size of the armature contact element in devices according to this invention may be between 0.5 ⁇ m 2 and 1 mm 2 in overall area.
- the specific area shape is envisioned to be a square, a circle, an oval, or some non-standard geometric figure.
- the armature contact element may be between 0.25 and 30 ⁇ m 2 in area.
- the armature contact element might be between 20 and 3,000 ⁇ m 2 in area. It is further contemplated that in devices suitable for handling high or very high signal loads, the armature contact element might be between 2,000 ⁇ m 2 and 1 mm 2 in total area.
- the performance demands of the contact element may require the use of different material layers to provide improved mechanical wear properties over those of the other electrical path materials used in a device according this invention. It is contemplated that in. one device, such different layers could include layers of hard metals such as nickel, tungsten, rhenium, rhodium, or ruthenium either below or on top of the nominal contact element surface. It is further contemplated that alloys or layered combinations of these and other low-resistivity metals can be used to fabricate the armature contact element. In devices according to this invention, it is expected that each material used for the armature contact element will have a thickness suitable for the application, which is likely to range from 0.1 to 100 ⁇ m. It is contemplated that the thickness of the armature contact element can vary across its planar area, to provide for differences in element depth and shape for a given application and embodiment.
- the material thickness of an armature contact element in devices according to this invention may range between 0.1 and 2 ⁇ m. Such a contact element would be light, thin, and of higher resistance than thicker paths of the same material and planar geometry.
- the material thickness of an element could range between 0.5 and 10 ⁇ m. Such an element would be of moderate mass and resistance as compared to other possible microfabricated elements and paths of the same material.
- the material thickness of a path could range between 5 and 1O0 ⁇ m.
- the contact elements are of the same gold alloy used in the signal line, with the addition of a curved 0.5 ⁇ m rhenium ove ⁇ late to provide a hard, wear-resistant contact area for reliable contact performance.
- the conductive path could be affixed to the bottom of the armature or traverse its center rather than affixed to the top. Such geometries are present in the second and third embodiments illustrated in Fig's. 6-10 and Figs. 11-13, accordingly.
- the conductive path could represent the majority of the material of the armature, unlike the depiction of Fig. 1A, which suggests the conductor is less substantial than other materials comprising the armature.
- the mechanical properties of the armature conductor does not dominate the mechanical properties of the entire armature.
- Such a design may be desired as it is recognized that some conductive materials are subject to disagreeable long-term mechanical degradation.
- the geometry of the armature contact element is not restricted to be a flat shape, such as a curved, stepped, or surface-roughened shape.
- armature contact element illustrated in Fig. 2A Facing the armature contact element illustrated in Fig. 2A is a base substrate contact element (122) that is electrically connected to the second load signal line by some conductive path (123).
- the geometry, materials, and thicknesses of the base substrate contact element, second load signal line, and conductive path should be considered in a similar manner as with the armature contact element, first signal line, and conductive path, both in terms of general device expectations and for the specific embodiment illustrated by Figs. 1-5.
- Fig. 1 Several elements present in Fig. 1 not visible in the cross-sectional views of Figs. 2A or 3 A are those defining the contact armature (124) of the relay.
- the contact armature extends from a region rigidly connected (125) to a principal armature or armature electrode to a region free to deflect (126).
- the functional value of this rigid connection and free region appear in the discussion of the cross-sectional schematic diagrams of Figs. 5A and 5B.
- the contact armature may be constructed of an insulating material as defined. It is recognized that in some devices according to this invention, the contact armature can be of the same material as inactive elements of the load armature or the actuator armature. In such a device, it is contemplated that the contact armature is integral with these elements and rigidly connected.
- insulating materials used for the contact armature could include microfabrication materials such as silicon, silicon nitride, silicon dioxide, quartz, or polyimide or other insulating polymer. It is contemplated that the material used for a contact armature may range from 0.3 ⁇ m to 1 mm thick depending on material, armature geometry, and the application of the relay. In devices designed for very low or low signal loads, it is contemplated that the material thickness of a contact armature could range between 0.3 and 8 ⁇ m. In devices designed for applications of low to moderate signal loads, it is contemplated that the material thickness could range between 4 and 80 ⁇ m.
- the material thickness could range between 50 and 300 ⁇ m. In yet other devices with large planar dimensions and designed for applications of high to very high signal loads, the material thickness could range between 200 ⁇ m and 1 mm.
- planar dimensions of the contact armature are contemplated as being comparable or smaller in magnitude than those of the load signal armature and the multimo ⁇ h actuator armature. It is contemplated that such planar dimensions range between 2 ⁇ m and 5 mm in each of width and length depending on the application, the material thickness, and the required contact force for the relay in the latched state. In devices according to this invention where very low to low signal loads are to be switched with fast switching speeds, the planar dimensions might range between 2 and 20 ⁇ m. In devices where low to moderate signal loads are to be switched, it is envisioned that the planar dimensions could range between 10 and 200 ⁇ m.
- planar dimensions could range between 100 ⁇ m and 1 mm. In the larger devices switching high or very high signal loads at slow to very slow speeds, the planar dimensions might range between 0.5 and 5 mm. As with the load signal armature, it is envisioned that such ranges not only apply to elements of solid rectangular design, but also to elements that vary in one or more dimensions by linear or non-linear functions.
- the contact armature of the embodiment illustrated in Figs. 1-5 is a 100 ⁇ m wide silicon dioxide beam that is 100 ⁇ m long and 6 ⁇ m thick. Such a device could provide the operating performance required for moderate power handling capabilities at moderate speed, and would contain the piezoelectric multimo ⁇ h actuation as well as the electrostatic latching mechanism required.
- Figure 4 is a cross-sectional schematic of the device illustrated in Fig. 1, showing the portion of the relay inco ⁇ orating the multimo ⁇ h actuator.
- the base substrate (102), part of the fixed base, is present in this illustration, with the armatures of Figs. 2A and 3 A suspended above the top surface of the base substrate.
- the multimo ⁇ h of Fig. 4 can be considered to be a piezoelectric multimo ⁇ h actuator.
- the actuator includes a top piezoelectric material (113) with electrical connections of the upper first drive signal connection (140) and lower second drive signal connection (141) to the top and bottom surfaces, respectively.
- the lower material (114) can be piezoelectrically neutral.
- This lower material (114) has the electrical connection (1 16) of the armature electrode affixed to the bottom surface. It is recognized that in other devices according to this invention, the armature electrode may be affixed in the middle or top of the lower material.
- the electrical connection (121) of the armature contact element is shown in Fig. 4, and is envisioned in the illustrated embodiment on the top planar surface of the load armature. It is recognized that each o'f the electrical connections could be on any insulated surface in any desired geometry in different devices. It is considered that the materials, thicknesses, and composition of the electrical paths and the multimo ⁇ h actuator are flexible within the scope of the invention as discussed for the previous embodiment.
- FIGs 5A and 5B show cross-sectional schematics of the relay embodiment illustrated in Figs. 1-5, the cross-sectional views having been taken at the free region of the principal armature system. It is recognized by those skilled in the art that this region can be an important part of relay design, as it inco ⁇ orates the contact elements responsible for electrical conduction when the relay is in the closed state.
- the base substrate (102) part of the fixed base, is present in Fig. 5 A, with the contact armature (124) suspended above the top surface of the base substrate.
- The' contact armature is affixed (125) to the principal armature at the location of the armature electrode (115) and has a free end (126) where the armature contact element (120) is positioned.
- the base substrate contact element (122) is located on the top surface of the base substrate, facing the armature contact element, and the electrical connection (123) of the armature contact element is seen extending into the center of the armature.
- the bending function of the contact armature is illustrated in Fig. 5B, which depicts the same cross section as Fig. 5 A except that the relay is in a closed and latched state rather than in a passive state, with these states discussed in greater detail immediately following.
- the contact armature is responsible for generating a bending spring force that generally forms part of the contact force between the armature contact element and the base substrate contact element.
- the initial gap between the latch electrodes (and latch electrode insulator) is greater than the original gap spacing between the contact elements, and this difference is the amount by which the contact armature spring must deflect when the relay is closed. It is contemplated that in some devices according to this invention, the contact armature spring force is the total contact force between the contact elements.
- the contact armature is responsible for only part of the total contact force between the contact elements. In yet other devices, it is conceived that the contact armature may provide very little or no total contact force between the contact elements.
- the first stable operational state of the relay shown in Figs. 2A, 3A, and 5A is defined as the passive state, which is the condition of the relay when no control signals are applied to the device. This is considered to be a natural condition, with device stability defined by the mechanical geometry and fabrication details of a given relay.
- Figures 2A, 3 A and 5 A provide typical examples of armatures in such a condition for some devices designed according to the invention, including that of the presently discussed embodiment. In these examples, the relay contact elements are not engaged, the multimo ⁇ h actuator is in a nominally neutral state of equilibrium stress, and the latch electrodes are separated.
- the multimo ⁇ h actuator armature or load signal armature can be upwardly curled rather than nominally flat when in the passive state.
- the multimo ⁇ h actuator armature or load signal armature can be downwardly curled rather than nominally flat when in the passive state.
- a drive control signal can be applied to the relay actuator(s).
- An example of the results of such an action is a stable state defined as the first active state, where the mechanical limitations of the device prevent further deflection of the relay armatures.
- the first active state can be represented by the illustrations of Figs. 2B and 3B, wherein the multimo ⁇ h actuator of Fig. 3B is curled in a downward direction due to the drive control signal. It is considered that the armatures of Figs.
- the first latched state can allow for the removal of the drive control signal from the actuator, and the relay will remain in the first latched state. It is considered that in some devices, including the presently discussed embodiment, the later removal of the latch control signal can send the relay back to the passive state. In some devices, the return to the passive state occurs due to the restoring forces internal to the armatures themselves. In other devices, it is considered that forcible assistance from a multimo ⁇ h actuator will assist in the return of the relay to the passive state. An example of such assistance is not illustrated in the embodiment examples of Figs. 1-5, but can be seen in the embodiment of Figs. 11-13 to be discussed.
- the piezoelectrically actuated armature of Figs. 3A, 3B, and 3C may be comprised of two or more multimo ⁇ h materials having a non-zero coefficient of piezoelectricity.
- each of the non-zero coefficient materials could be a layer constructed of one or more materials of the piezoelectric ceramics or crystals described previously.
- the upper piezoelectric material can be expanding while the lower is contracting.
- Such a multimo ⁇ h can generate as much as double the force available for a particular device design given a fixed total actuator armature thickness.
- multimo ⁇ h actuators with one or more piezoelectric layers may be used to generate not only the closing forces as suggested in Fig. 3B, but also opening forces as well. It is considered that in some devices according to this invention, the opening forces of the multimo ⁇ h can be achieved by reversing the closure drive control signal and applying its inverse. It is generally recognized that the ability to drive an actuator in either direction based on the polarity of the control signal is one advantage of a piezoelectric multimo ⁇ h. It is noted that this advantage is present in piezoelectric multimo ⁇ h devices according to this invention.
- Figures 1-5 depict structural elements necessary for an embodiment featuring a single piezoelectric bimo ⁇ h actuator structure driving a single contact armature. It is contemplated that this invention is intended to consider the functional concept of any relay driven by a multimo ⁇ h actuator having electrostatic latching mechanisms. Additional embodiments wherein the multimo ⁇ h is comprised of a different actuator material combination, or a relay is comprised of multiple contact armatures, actuator armatures, or both, is within the scope of this invention.
- Figs. 6-10 illustrate a second embodiment with armatures and operation functionally equivalent to those of Figs. 1-5. A plan- view illustration is provided in Fig. 6, with Figs. 7- 1O detailing cross-sectional views in an equivalent manner as the first embodiment. Element numbers for this second embodiment begin with 200 instead of with 100, with the last two digits referring to functional equivalents from the first embodiment for the sake of clarity.
- Figure 6 is a functional plan view schematic of a relay composed of two primary armature structures in a similar manner as the relay of Fig. 1.
- the elements of Fig. 6 are considered to be similar to those of Fig. 1, with differences present in the actuator components and the geometric and material selections for equivalent elements in this embodiment.
- elements normally not visible from the top view have been outlined in dashed lines for the sake of clarity.
- the specific geometry and location of the signal lines and paths are at the decision of designer, and are represented in the provided embodiments for pu ⁇ oses of illustrative example. It is considered that the materials, thicknesses, and composition of the electrical paths are flexible witriin the scope of the invention as previously discussed.
- the elements of the fixed base (201), base substrate (202), first (203) and second load signal lines (204), first (205) and second drive signal lines (206), and first (207) and second latch signal lines (208) are apparent as with Fig. 1.
- the actuator armature (209) is illustrated, with one end fixed (210) and one end (211) free to deflect in the direction normal to the base substrate.
- the load armature (259) is similarly shown with one end fixed (260) and one end (261) free to deflect as well.
- An actuator latch electrode (215) is seen, as well as the required actuator latch electrode path (216) to the latch signal control line.
- the actuator latch electrode path is directed from the armature to the base substrate by means of a metallic anchor region, which in some devices may be a solder bump or other conductive mechanical and electrical connection.
- the substrate latch electrode (217) and its path (218) to the second latch control signal lines are similarly visible in Figs. 6 and 8A.
- Figure 8A illustrates that this embodiment has a latch electrode insulator (219) atop the substrate latch electrode.
- the actuator contact element (22O) and actuator contact element path (221) to the first load signal line is present, as is the electrical connection (223) from the substrate contact element (222) to the second load signal line.
- the actuator contact element path in this embodiment is made from the armature to the base substrate by a metallic anchor region in a similar manner as discussed for the latch electrode path.
- the load armature (224) is affixed at one end (226) at the latch electrodes and free to deflect (225) in the region of the armature contact element.
- the specific material and geometry for this embodiment have been selected to design a device capable of handling very low load signal powers with fast switching speeds.
- the load armature has planar width and length of 15 ⁇ m and 75 ⁇ m, respectively, and is fabricated from silicon nitride 2 ⁇ m thick.
- the load signal path and contact element are constructed of 2 ⁇ m sputtered gold.
- the portion of the fixed base attached to the armature fixed ends is a section of a silicon handle wafer, which is bonded to a ceramic base substrate through a gold-platinum and solder connection. All conductors on the base substrate are 2 ⁇ m thick gold.
- the latch electrode insulator is 0.2 ⁇ m silicon nitride.
- the primary actuator for this embodiment is a thermal multimo ⁇ h.
- the thermal multimo ⁇ h illustrated is comprised of two primary bimo ⁇ h elements, an upper thermal multimo ⁇ h layer (227) and a lower thermal multimo ⁇ h layer (228).
- the upper thermal multimo ⁇ h layer is designed with a larger thermal coefficient of expansion. It is typical for those skilled in the art of thermal multimo ⁇ h construction to use materials that are metals for thermal multimo ⁇ h layers requiring large coefficients of thermal expansion.
- the multimorph in the presently discussed embodiment features a 2 ⁇ m thick palladium for the upper multimo ⁇ h layer and a 2 ⁇ m thick silicon nitride for the lower multimo ⁇ h layer.
- a metal can be used for layer (227) and an insulator used for layer (228).
- the materials that could be used for thermal multimo ⁇ h materials include metals such as gold, copper, silver, platinum, nickel, and aluminum.
- the materials that could be used for either layer include semiconductors such as silicon, gallium arsenide, silicon germanium, and indium phosphide. It is also contemplated that any alloy or layered combination of metals or semiconductors could be employed in devices according to this invention.
- thermal multimo ⁇ h materials include insulators such as silicon, silicon nitride, silicon dioxide, quartz, or polyimide or other insulating polymer. It is also recognized that each of layers (227) and (228) can be comprised of a stack of layers in order to design specific properties into an actuator.
- the thicknesses of thermal multimo ⁇ h actuator layers may range from 0.1 to 500 ⁇ m, depending on the material, fabrication processes, application, and the geometries of other elements.
- layers (227) and (228) may range from 0.1 to 3 ⁇ m in thickness. It is contemplated that in an application requiring low to moderate signal loads with high or moderate switching speeds, layers (227) and (228) might range from 2 to 30 ⁇ m in thickness.
- FIG. 8 includes a schematic representation of the cross-section of a heating element (229).
- such an element may be a resistive conductor trace in a path on the surface of an insulating layer.
- the heating element is fabricated from a 0.3 ⁇ m thick nickel-chrome alloy. It is contemplated that in some devices according to this invention, a heating element can be fabricated from a material with a resistivity between 0.001 and 10 ohm-cm. In some devices, a heating element may be constructed of a metal or semiconducting material. It is considered that the thickness of a resistive heating element in a device can range between 0.05 and 10 ⁇ m.
- the thickness may be between 0.05 and 2 ⁇ m. It is further contemplated that in some devices which include a resistive material with a resistivity greater than 0.1 ohm-cm, the thickness may be between 0.5 and 10 ⁇ m.
- a heating element insulator (230), which in the present embodiment electrically isolates the heating element from a conductive multimo ⁇ h layer. It is recognized that if the upper thermal multimo ⁇ h layer (227) were constructed of a metal in a device according to this invention, an insulating layer would insulate the heating element (229) from the layer (227) to allow the heating element to operate properly.
- the presently discussed embodiment considers that the upper thermal multimo ⁇ h layer (227) is conductive, and therefore benefit from insulation from the heating element.
- the embodiment depicted also considers that the lower multimo ⁇ h layer (228) is insulating, and could therefore be adjacent to the heating element without interfering with its proper operation.
- the heating element insulator would be fabricated of an insulating material as previously defined for the latch electrode insulator. It is contemplated that in some devices according to this invention, possible materials that may be used to fabricate the heating element insulator include silicon nitride, silicon dioxide, quartz, or polyimide or other insulating polymer. It is contemplated that the material used for a heating element insulator may be thin relative to some other material layers used in the fabrication of a particular device, with a range from 0.05 to 3 ⁇ m thick. It is contemplated that the material thickness of an insulating element in one device could range between 0.05 and 0.5 ⁇ m.
- the heating element insulator of the present embodiment is 0.1 ⁇ m of high- quality silicon nitride. In other devices, where thin layers of high-quality insulating materials are unavailable, it is contemplated that the material thickness of a latch electrode insulator could range between 0.3 and 3 ⁇ m.
- Figure 9 is a cross-sectional schematic of the device illustrated in Fig. 6, showing the portion of the relay inco ⁇ orating the multimo ⁇ h actuator.
- the base substrate (202), part of the fixed base, is present in this illustration, with the armatures of Figs. 7A and 8A suspended above the top surface of the base substrate.
- the multimo ⁇ h of Fig. 8 is a thermal multimo ⁇ h actuator.
- the actuator includes a top thermal multimo ⁇ h layer (227) with the heating element electrical connections of the first drive signal connection (240) and second drive signal connection (241) shown, each forming part of the heating element itself and surrounded by the heating element insulator (229).
- the lower thermal multimo ⁇ h layer (241) is the same material as the actuator armature (209), and the actuator latch electrode path (216) is shown at the bottom surface of this armature.
- the load signal path (221) is shown at the bottom surface of the load armature in a similar manner.
- the drive signal paths are fabricated from the 0.3 ⁇ m nickel-chrome alloy of the heating element, the latch signal path is fabricated from a 0.2 ⁇ m nickel layer, and the load signal path is fabricated from a 2 ⁇ m sputtered gold layer.
- Figures 10A and 10B show cross-sectional views having been taken at the free region of the principal armature system. This region inco ⁇ orates the contact elements responsible for electrical conduction when the relay is in the closed state.
- the base substrate (202), part of the fixed base, is present in Fig. 1 OA, with the contact armature
- armature contact element 220
- armature electrode Opposite the armature electrode is the base substrate electrode (217) and affixed latch electrode insulator (219).
- the base substrate contact element (222) is located on the top surface of the base substrate, facing the armature contact element.
- the bending function of the contact armature is illustrated in Fig. 10B, which depicts the same cross section as Fig. 10A except that the relay is in a closed and latched state rather than in a passive state, with these states discussed in the detailed description of Figs. 5 A and 5B.
- FIG 11 is a functional plan view schematic depicting a third embodiment, wherein the relay is composed of three primary armatures instead of two as with the first embodiments discussed.
- the relay of Fig. 11 has been designed such that the actuator armatures are pe ⁇ endicular to the load signal armature. It is recognized that the configuration for parallel or pe ⁇ endicular actuator armatures, and the specific number of each armature, in a specific device design is a feature at the decision of those skilled in the art for varying materials, geometries, and applications.
- Figure 12 is a cross-sectional schematic of the load armature in a passive, open state.
- Figures 13 A through 13D depict a cross-section of the thermal bimo ⁇ h actuators and contact armatures of the embodiment. Element numbers for this third embodiment begin with 300, with the last two digits referring to functional equivalents from the first and second embodiments for the sake of clarity.
- Fig. 11 The elements of Fig. 11 are considered to be similar to those of Figs. 1 and 6, with differences present in the actuator components and the geometric and material selections for equivalent elements in this embodiment. As with the illustration of buried elements of Figs. 1 and 6, elements normally not visible from the top view have been outlined in dashed lines for the sake of clarity. The specific geometry and location of the signal lines and paths are at the decision of designer, and are represented in the provided embodiments for pu ⁇ oses of illustrative example. It is considered that the materials, thicknesses, and composition of the electrical paths are flexible within the scope of the invention as previously discussed.
- the elements of the fixed base (301), base substrate (302), first (303) and second load signal lines (304), first (305) and second drive signal lines (306), and first (307) and second latch signal lines (308) are shown.
- the closing actuator armature (309) is seen, with one end fixed (310) and one end (311) free to deflect in the direction normal to the base substrate.
- the load armature (359) is shown pe ⁇ endicular to the closing actuator armature, with its one end fixed (360) and one end (361) free to deflect normal to the substrate.
- the opening actuator armature (389) is seen opposite the closing actuator armature, and has a fixed end (390) and free end (391) in a mirrored fashion.
- the armatures for the embodiment shown have been designed to carry a large load signal at slow switching speeds.
- the primary material for the armatures is a single-crystal silicon layer 12 ⁇ m thick.
- the load armature is 200 ⁇ m wide and 800 ⁇ m long.
- the actuator armatures are 250 ⁇ m wide and 650 ⁇ m long.
- the load signal lines and paths are fabricated from an 8 ⁇ m thick copper alloy.
- the control signal and latch signal lines and paths are fabricated from a sputtered 2 ⁇ m thick nickel-chrome alloy.
- An actuator latch electrode (315) is seen for the closing actuator armature, and a second latch electrode (365) is seen for the opening actuator armature.
- the required latch electrode paths (316) and (366) to the latch signal control lines (307) and (357),- respectively, can be seen clearly in Fig. 13 A.
- a substrate latch electrode path (318) of the closing actuator armature substrate latch electrode (317) to the second latch control signal lines may be seen.
- the substrate latch electrode path (378) of the opening actuator armature substrate latch electrode (367) are illustrated in Fig. 11.
- the actuator contact element (320) and load signal path (321) to the first load signal line can be seen in Figs. 11 and 12.
- the substrate contact element path (323) from the substrate contact element (322) to the second load signal line is clearly illustrated in Fig. 12.
- the closing actuator contact armature (324) is affixed at one end (326) at the latch electrodes and free to deflect (325) in the region of the armature contact element.
- the opening actuator contact armature (374) is affixed at one end (326) at the latch electrodes and free to deflect (325) in the region of the armature contact element.
- the closing actuator is comprised of an upper thermal bimorph layer (327) and a lower thermal bimo ⁇ h layer (328) with similar material and geometry considerations as the thermal multimo ⁇ h of the previous embodiment and illustrated most clearly in Fig. 13 A.
- the opening actuator is comprised of an expansive thermal bimo ⁇ h layer (377) beneath the nominal armature layer (378).
- a resistive closing heating element (329) provides a method of heating the closing bimo ⁇ h actuator with a control signal consisting of an electric cunent. As with the resistive element (229) previously discussed, it is considered that such an element might be a resistive meandering path on the surface of an insulating layer (330). It is further considered that the materials and thicknesses for such an element would be similar to those discussed for the previous embodiment.
- An opening heating element (379) provides a method of heating the opening bimorph actuator in a similar manner. This element is electrically insulated by a heating element insulator (380). It is recognized that the fixed- beam of the dual thermal bimo ⁇ h actuators results in a constrained range of motion relative to a cantilever arrangement.
- Figure 13 A is a cross-sectional schematic illustration of the thermal bimo ⁇ h actuator relay embodiment depicted in Fig. 11, with elements in accordance with Figs. 11 and 12, and in a neutral state without actuation or latch signals applied. It is recognized in the presently discussed embodiment that the two multimo ⁇ h actuators actuate in opposing directions. In this embodiment, the closing actuator deflects the armature contact element in a downward direction when a closing control signal is applied, whereas the opening actuator deflects in an upward direction normal to the base substrate when an opening control signal is applied.
- FIG. 13B is a cross-sectional schematic of a device in the stable first active state, wherein the mechanical limitations of the device prevent further armature deflection.
- the closing actuator of Fig. 13B is curled in a downward direction due to the drive control signal, though severely constrained by the fixed beam condition and bending forces of the contact armatures. It is considered that the armatures of Figs.
- the first latched state for this embodiment is initiated by applying a latch control signal to both sets of latch electrodes to attract them and hold them together with electrostatic forces. It is considered that in many devices according to this invention that such an action results in the flattening of the armature electrode and the holding of the closed contact.
- the embodiment illustrated in Fig. 13C reflects such a condition.
- the first latched state allows for the removal of the drive control signal from the actuator, and the relay will remain in the first latched state.
- FIG. 13D illustrates this new stable state, the second active state, wherein the drive open signals are applied to the opening signal lines, and no latch signals or other control signals are present.
- the thermal multimo ⁇ h of the opening actuator is designed to curl in an upwards direction when actuated, and this upwards curl is illustrated in Fig. 13D, though it is severely constrained by the fixed beam conditions of the actuator armatures.
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Abstract
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Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2002/025115 WO2004015729A1 (en) | 2002-08-08 | 2002-08-08 | Microfabricated relay with multimorph actuator and electrostatic latch mechanism |
EP02759296A EP1527466A1 (en) | 2002-08-08 | 2002-08-08 | Microfabricated relay with multimorph actuator and electrostatic latch mechanism |
JP2004527504A JP2005536014A (en) | 2002-08-08 | 2002-08-08 | Microfabricated relay with multimorph actuator and electrostatic latch mechanism |
AU2002324639A AU2002324639A1 (en) | 2002-08-08 | 2002-08-08 | Microfabricated relay with multimorph actuator and electrostatic latch mechanism |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2002/025115 WO2004015729A1 (en) | 2002-08-08 | 2002-08-08 | Microfabricated relay with multimorph actuator and electrostatic latch mechanism |
Publications (1)
Publication Number | Publication Date |
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WO2004015729A1 true WO2004015729A1 (en) | 2004-02-19 |
Family
ID=31713789
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/US2002/025115 WO2004015729A1 (en) | 2002-08-08 | 2002-08-08 | Microfabricated relay with multimorph actuator and electrostatic latch mechanism |
Country Status (4)
Country | Link |
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EP (1) | EP1527466A1 (en) |
JP (1) | JP2005536014A (en) |
AU (1) | AU2002324639A1 (en) |
WO (1) | WO2004015729A1 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006346787A (en) * | 2005-06-14 | 2006-12-28 | Sony Corp | Movable element, and semiconductor device, module and electronic equipment with the same |
KR100831526B1 (en) | 2005-11-24 | 2008-05-22 | 후지쓰 메디아 데바이스 가부시키가이샤 | Switch |
WO2009067222A1 (en) * | 2007-11-19 | 2009-05-28 | Xcom Wireless, Inc. | Microfabricated cantilever slider with asymmetric spring constant |
CN103552978A (en) * | 2013-11-14 | 2014-02-05 | 东南大学 | Deflection-type recovering-assistant MEMS hanging beam structure |
CN103552979A (en) * | 2013-11-14 | 2014-02-05 | 东南大学 | Heat-static strong recovering type MEMS four-point support hanging beam structure |
CN103552973A (en) * | 2013-11-14 | 2014-02-05 | 东南大学 | Micro cantilever beam structure with thermal-driving adhesion elimination mechanism in micro electro mechanical system |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8354899B2 (en) * | 2009-09-23 | 2013-01-15 | General Electric Company | Switch structure and method |
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WO1998034269A1 (en) * | 1997-02-04 | 1998-08-06 | California Institute Of Technology | Micro-electromechanical relays |
US5796152A (en) * | 1997-01-24 | 1998-08-18 | Roxburgh Ltd. | Cantilevered microstructure |
US5828138A (en) * | 1996-12-02 | 1998-10-27 | Trw Inc. | Acceleration switch |
WO1999005589A1 (en) * | 1997-07-25 | 1999-02-04 | Alcatel | Miniature connector array |
US20020050881A1 (en) * | 2000-10-27 | 2002-05-02 | Hyman Daniel J. | Microfabricated relay with multimorph actuator and electrostatic latch mechanism |
US20020050882A1 (en) * | 2000-10-27 | 2002-05-02 | Hyman Daniel J. | Microfabricated double-throw relay with multimorph actuator and electrostatic latch mechanism |
-
2002
- 2002-08-08 EP EP02759296A patent/EP1527466A1/en not_active Withdrawn
- 2002-08-08 WO PCT/US2002/025115 patent/WO2004015729A1/en active Application Filing
- 2002-08-08 JP JP2004527504A patent/JP2005536014A/en active Pending
- 2002-08-08 AU AU2002324639A patent/AU2002324639A1/en not_active Abandoned
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US5828138A (en) * | 1996-12-02 | 1998-10-27 | Trw Inc. | Acceleration switch |
US5796152A (en) * | 1997-01-24 | 1998-08-18 | Roxburgh Ltd. | Cantilevered microstructure |
WO1998034269A1 (en) * | 1997-02-04 | 1998-08-06 | California Institute Of Technology | Micro-electromechanical relays |
WO1999005589A1 (en) * | 1997-07-25 | 1999-02-04 | Alcatel | Miniature connector array |
US20020050881A1 (en) * | 2000-10-27 | 2002-05-02 | Hyman Daniel J. | Microfabricated relay with multimorph actuator and electrostatic latch mechanism |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006346787A (en) * | 2005-06-14 | 2006-12-28 | Sony Corp | Movable element, and semiconductor device, module and electronic equipment with the same |
KR100831526B1 (en) | 2005-11-24 | 2008-05-22 | 후지쓰 메디아 데바이스 가부시키가이샤 | Switch |
WO2009067222A1 (en) * | 2007-11-19 | 2009-05-28 | Xcom Wireless, Inc. | Microfabricated cantilever slider with asymmetric spring constant |
US8274200B2 (en) | 2007-11-19 | 2012-09-25 | Xcom Wireless, Inc. | Microfabricated cantilever slider with asymmetric spring constant |
CN103552978A (en) * | 2013-11-14 | 2014-02-05 | 东南大学 | Deflection-type recovering-assistant MEMS hanging beam structure |
CN103552979A (en) * | 2013-11-14 | 2014-02-05 | 东南大学 | Heat-static strong recovering type MEMS four-point support hanging beam structure |
CN103552973A (en) * | 2013-11-14 | 2014-02-05 | 东南大学 | Micro cantilever beam structure with thermal-driving adhesion elimination mechanism in micro electro mechanical system |
Also Published As
Publication number | Publication date |
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AU2002324639A1 (en) | 2004-02-25 |
EP1527466A1 (en) | 2005-05-04 |
JP2005536014A (en) | 2005-11-24 |
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