WO2004005592A1

WO2004005592A1 - Thin sheet manufacturing apparatus and thin sheet manufacturing method

Info

Publication number: WO2004005592A1
Application number: PCT/JP2003/008323
Authority: WO
Inventors: Shuji Goma; Hirozumi Gokaku; Kozaburo Yano
Original assignee: Sharp Kabushiki Kaisha
Priority date: 2002-07-03
Filing date: 2003-06-30
Publication date: 2004-01-15
Also published as: JPWO2004005592A1; JP4105159B2; TW200409371A; TWI244769B; AU2003244200A1

Abstract

An apparatus and method for manufacturing a silicon thin film at a lower manufacturing cost than conventional. The apparatus comprises dipping mechanisms in each of which a base sheet (C1, C2) is dipped in a melt (3) to make a thin sheet made of the material of the melt on the base sheet, and the base sheet is attached/removed in one base sheet change position. The thin sheet manufacturing apparatus is characterized in that the dipping mechanisms (103, 203) having almost the same structures are so arranged that the base sheet change operation in one dipping mechanism does not interfere with the base sheet change operation in any other dipping mechanisms. The thin sheet manufacturing apparatus has a plurality of dipping mechanisms where the exchange positions vary from dipping mechanism to dipping mechanism. Therefore the thin sheet production rate can be increased a plurality of times.

Description

Description Thin plate manufacturing apparatus and thin plate manufacturing method

The present invention relates to a thin plate manufacturing apparatus and a thin plate manufacturing method, and more specifically, to a silicon thin plate manufacturing apparatus and a silicon thin sheet manufacturing method. Background art

Silicon is used for consumer solar cells. The conversion efficiency of silicon decreases in the order of single crystal, polycrystal, and amorphous, but on the other hand, the cost is lower and the area is easier to increase. Among these, amorphous silicon, the S i H ₄ CVD as a raw material (C h em ical Va por De position) method, glass, plastic, inexpensive because it deposits on such metal substrates, Tsu force It is easy to increase the area. The conversion efficiency is up to about 12%.

In addition, single-crystal silicon can be manufactured as 150 mm (6 inch) or 200 mm (8 inch) diameter ingots by the CZ (C zochralski) method, and it is possible to increase the size, and the conversion efficiency can exceed 15%. .

In addition, for polycrystalline silicon, methods of solidifying and growing from a liquid phase and methods of depositing from a gas phase are being studied. Polycrystalline silicon, like amorphous silicon, is likely to have a large area, but the conversion efficiency is located between monocrystalline silicon and amorphous silicon.

Japanese Patent Application Laid-Open No. 2001-247396 describes a method and an apparatus for producing a crystal sheet for a solar cell. In this technique, the movable member for immersing the base plate in the melt moves the base plate one after another along the same track.The base plate is immersed only in the same place in the crucible, and the thin plate is peeled off at the top Since it can be recovered, there is a limit to the manufacturing speed of the thin plate due to the peeling and recovering speed of the thin plate, the rotating speed of the movable member, or the strength of the phenol. Disclosure of the invention

Various silicon manufacturing methods are increasing the area of solar cells, improving conversion efficiency, and reducing manufacturing costs. However, compared to current large-scale power generation methods such as nuclear power generation and thermal power generation, the unit price of photovoltaic power generation is relatively high, and it is necessary to reduce manufacturing costs.

The present invention provides a method for manufacturing a silicon thin plate and an apparatus for manufacturing the thin plate, which can increase the manufacturing speed and greatly increase the manufacturing efficiency and can drastically reduce the manufacturing cost per unit area of the solar cell. The purpose is to provide.

The thin plate manufacturing apparatus of the present invention can be immersed in a melt of a substance containing at least one of a metal material and a semiconductor material, and mounting and removing the base plate can be performed at substantially the same (one) replacement position. A thin plate made of a material of a melt is formed on the surface of the base plate. Further, the thin plate manufacturing apparatus of the present invention is provided with a plurality of immersion mechanisms, and a replacement position is different for each immersion mechanism.

By providing an immersion mechanism that installs and removes the base plate at almost the same replacement position, it is possible to mount and remove the base plate almost at the same time, and it is possible to improve the production speed of thin plates Become. In addition, since a plurality of immersion mechanisms are provided and the replacement position is different for each immersion mechanism, the base plate can be replaced independently for each immersion mechanism. The production speed of the sheet can be made a multiple of the number of the immersion mechanisms without the need for the production. Two immersion mechanisms double the production speed, three immersion mechanisms triple.

Further, the thin plate manufacturing apparatus of the present invention is characterized in that the melt is put in one crucible, and a plurality of immersion mechanisms immerse the base plate in the melt of this one crucible.

As described above, since the melt in one crucible is shared by a plurality of immersion mechanisms, the quality of thin plates produced by each of the plurality of immersion mechanisms can be the same. Further, the thin plate manufacturing apparatus according to the present invention is characterized in that a plurality of immersion mechanisms immerse the base plate in the melt substantially near the center of one crucible.

The quality of the melt is most stable near the center of the crucible, and as a result, a stable thin plate can be obtained.

Further, in the thin plate manufacturing apparatus of the present invention, a plurality of immersion mechanisms are arranged in substantially the same horizontal plane. It is characterized by being placed.

Thereby, the configurations of the immersion mechanisms of a plurality of systems can be made the same.

Further, the thin plate manufacturing apparatus of the present invention is characterized in that a plurality of immersion mechanisms are arranged at symmetrical positions around a crucible.

Further, in the method for producing a thin plate according to the present invention, the base plate can be immersed in a melt of a substance containing at least one of a metal material and a semiconductor material, and the mounting and removing of the base plate are performed at substantially the same replacement position. This is a method of manufacturing a thin plate having a plurality of immersion mechanisms capable of forming a thin plate made of a melt material on the surface of a base plate. The immersion mechanism includes a first immersion mechanism in which the first cycle is performed after the first immersion operation of attaching the first base plate, immersing the base plate in the melt, and then removing the base plate in the first cycle. It consists of a second immersion mechanism with a second cycle consisting of an immersion operation of mounting the base plate and immersing the base plate in the melt, and then removing the base plate in a second cycle.

Since the two dipping mechanisms are driven in two cycles in this way, the production speed of the thin plate can be doubled.

The first cycle and the second cycle are characterized in that they operate symmetrically around the crucible.

This makes it possible to use the same control method and operation programming for multiple immersion cycles. Also, by immersing in the same operation at the same position, the quality of the obtained thin plate is also stabilized.

Further, the thin plate manufacturing method of the present invention is characterized in that the times required for the first cycle and the second cycle are substantially equal.

Thus, the two immersion mechanisms can be driven at the same timing. Further, the method of manufacturing a thin plate according to the present invention is characterized in that the operation is performed with the second cycle shifted from the first cycle.

Further, the thin plate manufacturing method of the present invention is characterized in that the second cycle operates with a half cycle delay with respect to the first cycle.

As a result, the two immersion mechanisms can be driven alternately, and the production speed can be increased. Further, the method for producing a thin plate according to the present invention is characterized in that a standby step is provided before and / or after mounting and removing the base plate.

This allows the two immersion mechanisms to operate continuously without interference. BRIEF DESCRIPTION OF THE FIGURES

1 and 2 are schematic diagrams of a thin film manufacturing apparatus according to the present invention.

FIG. 3 is a schematic diagram of the operation of the immersion mechanism in the thin film manufacturing apparatus of the present invention. FIGS. 4 to 5B are schematic diagrams of the operation of two immersion mechanisms in the thin film manufacturing apparatus of the present invention.

6 and 7 are diagrams illustrating the operation of the first immersion mechanism and the second immersion mechanism for explaining the tact time according to the present invention. BEST MODE FOR CARRYING OUT THE INVENTION

(Embodiment 1)

Thin sheet manufacturing equipment>

The thin plate manufacturing apparatus shown in FIG. 1 has a main chamber 1 in which a crucible 2 is arranged, and a plurality of sub-chambers provided adjacent to the main chamber. The crucible 2 stores a high-purity silicon melt 3 containing an appropriate concentration of an impurity that provides conductivity to one side when constituting a solar cell. Two immersion mechanisms 103 and 203 for immersing the surface layers of the base plates C1 and C2 in the silicon melt 3 are arranged between the subchamber and the immersion mechanisms 103 and 203. Has a transport mechanism (not shown) for transporting the base plate. An inert gas is introduced into the main chamber 1 and maintained at a pressure slightly lower than the atmospheric pressure, that is, a negative pressure. Ar gas is introduced into the thin plate manufacturing apparatus shown in Fig. 1, and the pressure is set to 700 T Torr (about 930 hPa). This Ar gas can be circulated for removal of silicon oxide and other dust through a filter or the like when exhausting. It is desirable to use carbon for the base plate, but it does not have to be made of carbon. By forming regular irregularities on the surface of the base plate, the crystal nucleus generation position can be determined, so that a polycrystalline / single-crystal silicon thin plate having a large grain size can be obtained.

Adjacent to the main chamber 1, a base plate C 1 (hereinafter referred to as “first The base plate C 2 (hereinafter referred to as “first base plate”) to be supplied to the first charging sub-chamber 5 and the second immersion mechanism 203 for introducing the first base plate from outside the apparatus into the main room. 2) into the main room from outside the machine, and the base plate taken out together with the thin plate S1 from the first immersion mechanism 103. First sub-chamber 7 for unloading C 1 from the main chamber to the outside of the apparatus, and base plate C 2 taken out of the thin plate S 2 from the second immersion mechanism 203 from the main chamber. A second unloading sub-chamber 8 for carrying out of the apparatus and a sub-charging sub-chamber 9 for introducing the raw material for re-charging into the main room are provided.

By arranging the loading sub-chamber and the unloading sub-chamber so as to face each other with the base plate operation straight line 4 interposed therebetween, the flow of the base plate is simplified.

In FIG. 1, the base plate C1 attached to the first immersion mechanism 103 is transported by the transport mechanism so as to flow from right to left in the figure, that is, in the order of arrows 1A to 1G. On the other hand, the base plate C2 attached to the second immersion mechanism 203 flows from left to right in the figure, that is, flows from the arrow 2A to the arrow 2G. In this arrangement, the base plate carried out of the apparatus at arrow 1G can be carried into the apparatus at arrow 2A immediately after appropriate treatment. The same is true for 2 G and 1 A. Here, the appropriate treatment includes, for example, cooling of the thin plate and the base plate, separation of the thin plate and the base plate, counting of the number of times the base plate is used, inspection of the degree of wear of the base plate, and measurement of the thickness of the base plate. Inspection, cleaning of the base plate, processing to restore the base plate to its original shape, disposal of the base plate, replenishment of a new base plate, etc. The same is true for arrows 2G and 1A.

However, the flow of the first base plate C1 may be a flow from left to right, and the second base plate C2 may be a flow of right to left. Of course, the flow of the first and second base plates may both be right to left or left to right. In addition, the loading subchambers 5 and 6 and the unloading subchambers 7 and 8 do not necessarily have to face each other with the base plate operating line 4 (see Fig. 2). Further, when a base plate carried in from the sub chamber is branched in the main chamber 1 and divided into a first immersion mechanism and a second immersion mechanism, one charging sub chamber may be used. Similarly, in the case where there is a mechanism in which the base plates carried out from the first immersion mechanism and the second immersion mechanism to the sub-chamber are merged in the main chamber 1, the number of sub chambers for taking out may be one. The sub-chamber has the same atmosphere as the main chamber 1, that is, an inert gas atmosphere and a negative pressure. Method for manufacturing thin sheet>

Next, a method of manufacturing a thin plate will be described with reference to FIGS. Hereinafter, the flow of the base plate C1 immersed in the first immersion mechanism 103 will be described. The description will not be repeated for base plate C2 immersed in second immersion mechanism 203, since the flow is the same. Since the reference numerals in the second immersion mechanism are used corresponding to the first immersion mechanism, it is obvious to those skilled in the art that they need not be described individually.

While the main room 1 is in operation, with the airtight door 52 between the charging subchamber 5 and the main room 1 closed, the airtight door 51 to the outside is opened, and the base plate is Carry in the room (arrow 1A). Next, the airtight door 51 is closed, the inside of the sub chamber 5 is evacuated, Ar gas is introduced, and the pressure is made the same as that of the main chamber 1. To be the same as Thereafter, in accordance with the operation of the immersion mechanism 103 in the main room 1, the airtight door 52 between the charging sub-room 5 and the main room 1 is opened, and the base plate C1 is mounted in the main room 1. Enter (arrow 1B). It is desirable that a plurality of base plates C1 be carried together into the sub-chamber 5 and then be loaded into the main room 1 together. Thus, the charging sub-chamber operation and the immersion operation can be made independent, and it is possible to prevent the speed at which the base plate is supplied from the sub-chamber to deteriorate the tact time. At this time, it is necessary to install a buffer 104 on the main room side, in which more base plates than the number of substrates to be carried at once from the sub room are retained.

The base plate C1 carried into the buffer 104 is attached to the entire immersion mechanism 103 while being linked with the operation of the immersion mechanism 103 (arrow 1C).

The immersion mechanism 103 transfers the substrate C onto the crucible 2 after grasping the base plate C1. Next, the base plate is lowered, and the surface layer of the base plate is immersed in the silicon melt 3 to form a silicon thin plate S1 on the surface of the base plate. Thereafter, the base plate C 1 on which the silicon thin plate S 1 is attached rises, leaves the crucible 2, returns to the base plate replacement position (arrow 1 D), and is removed from the immersion mechanism (arrow 1 E). ). Polycrystalline 'single crystal' is obtained as the silicon thin plate S1.

The base plate C 1 on which the silicon thin plate S 1 is formed passes through the airtight door 72 opened after confirming that the atmosphere in the sub-chamber 7 is the same as that of the main chamber 1, and passes through the sub-chamber 7. It is taken out into chamber 7 (arrow 1F). After that, the airtight door 71 with the outside is opened with the airtight door 72 closed, and the base plate on which the silicon thin plate is formed is carried out. (Arrow 1G).

It is desirable that a plurality of base plates be collectively carried out to the sub-chamber 7 and thereafter be carried out collectively to the outside. As a result, the unloading operation to the unloading sub-chamber and the immersion operation can be made independent, and the speed of unloading the base plate from the main chamber to the sub-chamber can be prevented, and the tact time can be prevented from deteriorating. . At this time, it is necessary to install a buffer 105 on the main room side in which at least as many base plates as the number of substrates to be carried out to the sub room at a time are retained. When the number of base plates C1 on which the thin plates S1 are formed and which are successively unloaded from the immersion mechanism 103 to the buffer 105 reaches the number of sheets which are unloaded to the sub-chamber at once. It is desirable to carry it out to sub-chamber 7 at a time.

In order to cool the silicon thin plate formed on the surface of the base plate, a cooling device that accelerates cooling is provided in at least one location of the main chamber, sub-chamber or outside, and the base plate with silicon attached by the cooling device May be cooled. As the simplest cooling device, there is a method in which a cooling plate with cooling water is installed, and a base plate is brought into contact with the cooling plate for the required time to perform heat removal cooling.

When cooling in the main chamber, the simplest method is to provide a cooling mechanism in the unloading buffer 105. At this time, the number of base plates to be retained in the buffer is calculated as (the time required for cooling (seconds)) / (the time required for removing one base plate (seconds)). Needs to be added.

The immersion mechanism for transferring the base plate C 1 in the main chamber 1 and immersing it in the silicon melt 3 includes a mechanism using a guide rail, a mechanism using a rotating body, a mechanism using a structure like a robot arm, etc. You can use such a mechanism. Figure 3 illustrates an example of an immersion mechanism that uses guide rails. The dipping mechanism shown in FIG. 3 includes an elevating mechanism 310 integrated with a slide that moves along the horizontal operation rail 302. The lifting mechanism 3 10 is attached to a suspension column 3 1 1 1, a rotation mechanism 3 1 2 installed on the suspension column, a rotation column 3 1 4 operated by the rotation mechanism, and a tip of the rotation column 3 14. And a pedestal 316 to which the base plate C is attached is provided at a position connecting the end of the suspension column 311 and the end of the support column 315. The slide body, lifting mechanism, suspension support, rotation mechanism, rotation support, support support, and pedestal are collectively referred to as immersion mechanism 303. To move the base plate horizontally, move the slide along the horizontal movement rail 302. This is performed by moving the entire immersion mechanism 303. The vertical movement of the base plate is performed by lifting and lowering the entire mechanism suspended below the suspension column 311 with the lifting mechanism 3110. The rotation of the base plate is performed by a rotation mechanism 312. The horizontal, up, down, and rotation operations can be performed independently of each other.

Next, the operation cycle of the base plate by one immersion mechanism will be described with reference to FIG. <Operation cycle of base plate>

The base plate C is mounted on the pedestal 3 16 of the immersion mechanism 303 at the base plate replacement position 300 (corresponding to positions 106 and 206 in FIG. 2) (arrow 1 C in FIG. 1). ). The pedestal 3 16 has a concave groove and the base plate has a convex groove, so that the pedestal and the base plate are mounted by sliding so that both the grooves fit together. It is. At this time, the surface of the base plate is facing the zenith direction. When the rotating mechanism 3 1 2 rotates clockwise, the rotating column 3 1 4 operates, and the supporting column 3 15 descends, so that the horizontal lever L moves about the lower end X of the suspension column 3 1 1 as a fulcrum. Rotate clockwise. This is combined with the vertical movement of the lifting mechanism 310 and the horizontal movement of the slide body moving along the horizontal movement rail 302, and the base plate rotates clockwise. While moving to the right. Here, position 307 is defined as a position before immersion. Next, the base plate further rotates clockwise while returning to the left from the pre-immersion position 307, and the base plate is immersed in the melt 3 with the base plate surface facing down. The position 308 after the base plate is taken out is defined as the post-immersion position. The base plate rotates clockwise while returning further to the left from the position after immersion, and returns to the replacement position 303 with the base plate surface facing the zenith direction. Thereafter, the base plate on which the thin plate is formed is extruded, and at the same time, a new base plate is mounted.

In the present embodiment, the orientation of the base plate when replacing the base plate is such that the surface is oriented in the zenith direction, but the surface of the base plate may be oriented in any direction, such as sideways or downward. In FIG. 3, the operation cycle is clockwise, but may be either counterclockwise, or halfway clockwise and halfway counterclockwise, or halfway clockwise halfway and halfway clockwise. Further, in this embodiment, the position before immersion is defined as position 307 for convenience of description, but the position before immersion may be any position from the replacement position of the base plate to the position at which the base plate enters the melt. I do not care. Similarly, in the position after immersion Regardless of the position, any position from the position where the base plate has completely escaped from the melt to the replacement position may be used.

The setting of the above operation is usually performed by a personal computer. By programming the horizontal movement command, the vertical movement movement command, and the rotation movement command, and sending them to the controller, an arbitrary trajectory according to the program is realized.

Since the silicon melt is at a high temperature of 140 to 150 ° C, and has silicon deposition and adhesion of SiO x powder, it is heat-insulated or cooled to protect the rail immersion mechanism. Place the shield plate (not shown) on the crucible at a position that does not interfere with the dipping mechanism or the operation of the base plate.

The operation time in the above case is 1 second for mounting and unloading the base plate (simultaneous operation, hereinafter referred to as “replacement”), 2 seconds for moving to the position before immersion, 2 seconds for immersion operation, and return operation. And the cycle time (the time required for one cycle) was 7 seconds. <Addition of melt material>

The reloading sub-chamber 9 is a sub-chamber for introducing additional raw materials into the main chamber when the melt decreases due to continuous immersion. With the airtight door between the sub-room 9 for retrofit and the main room 1 closed, the air-tight door between the sub-room 9 and the outside is opened, and the raw material is carried into the sub-room. Next, the airtight door is closed, the inside of the sub-chamber 9 is evacuated, Ar gas is introduced into the sub-chamber 9, and the pressure is made the same as that of the main chamber 1. Same as 1. Thereafter, the hermetic door between the sub chamber 9 and the main chamber 1 is opened, and the raw material is loaded into the additional mechanism 10 in the main chamber 1. As the raw material, high-purity silicon having a purity equal to or higher than that of the melt is used. The reloading mechanism 10 reloads the raw material in the crucible 2 by tilting. By providing the additional loading mechanism 10 with a small crucible and a heating device, it is possible to melt the raw material in the additional loading mechanism and add the raw material to the crucible 2 in a molten state.

(Embodiment 2: Temporary standby of immersion mechanism)

FIG. 2 is a diagram illustrating a thin plate manufacturing apparatus according to Embodiment 2 of the present invention. The main room of the thin plate manufacturing apparatus shown in FIG. 2 is composed of a crucible 2, two dipping mechanisms installed on the crucible, and two base plate transport systems. In this figure, the first immersion mechanism 103 force is standby at the first base plate replacement position 106, the second immersion mechanism 203, and the second base plate replacement position 206, respectively. Indicates a state in which Since FIG. 2 is a top view centering on the immersion mechanism and the crucible, only the horizontal movement is shown with respect to the movement trajectory of the lower base plate and each mechanism in this figure.

The first immersion mechanism 103 is installed such that the horizontal operation direction of the base plate C1 is on a straight line passing through the position where the base plate is immersed in the melt in the crucible. The immersion position is between the position where the base plate central part starts immersing in the melt and the position where the base plate central part escapes from the melt. In the present embodiment, a cylindrical crucible is used, and the immersion position is at the center of the crucible.

Similarly, the second immersion mechanism 203 is also installed such that the horizontal operation direction of the base plate C2 is on a straight line passing through the position where the base plate is immersed in the melt in the crucible. In order to match the quality of the thin plate produced from the first immersion mechanism and the second immersion mechanism, it is desirable that the immersion positions be the same. That is, the horizontal movement of the base plates C1 and C2 constitutes two straight lines that intersect at the immersion position.

Furthermore, it is desirable that the two straight lines be the same line (the intersection angle is 0 °). This is because the path for introducing the base plate and the path for unloading are parallel or vertical when designing, manufacturing, installing, and exchanging with peripheral equipment. The horizontal movement straight line 4 in FIG. 2 shows a case where the horizontal movement of the two base plates is constituted by the same straight line.

In FIG. 2, the horizontal movement of the base plate C1 attached to the first immersion mechanism 103 and the base plate C2 attached to the second immersion mechanism 203 are performed on the same straight line. Therefore, it is impossible to intersect the base plates unless they are avoided in the vertical direction. FIG. 4 is a side view illustrating a thin plate manufacturing apparatus in which the first immersion mechanism 103 avoids the second immersion mechanism 203 in the vertical direction. If it is assumed that the second immersion mechanism 203 avoids the first immersion mechanism 103 vertically, the second immersion mechanism 203 is operated by the arrow 2U in the first immersion mechanism 1 You will get over 0 3 and return to the original height by the action of arrow 2D. Therefore, it is necessary to install the horizontal operation rail 202 for moving the second immersion mechanism 203 in the horizontal direction at a position sufficiently higher than the horizontal operation rail 103, and the height of the entire apparatus increases. I do. In addition, the second immersion mechanism 203 must provide a long lifting stroke. That is, in the above case, not only cannot the height of the entire apparatus be reduced, but also it is necessary to secure an up-and-down stroke. Since it is necessary to make the suspension column 2 1 1 3 long, this is disadvantageous also from the viewpoint of the durability of the immersion mechanism.

It is desirable that the mechanisms and members used for the first and second immersion mechanisms and the control (operation program) for operating these mechanisms be common. By making these common, it is possible to standardize component design, spare component management, and control program creation, and reduce operating costs. In order to use a common mechanism and members, it is desirable to arrange immersion mechanisms of the same design in almost the same horizontal plane and perform the immersion operation in the same operation.

In this case, in order to avoid interference between the immersion mechanisms, the method of avoiding in the vertical direction as described above cannot be used. In other words, the operating ranges of the immersion mechanisms arranged in substantially the same horizontal plane need to be different.

The operation of the first immersion mechanism 103 and the second immersion mechanism 203 will be described with reference to FIGS. 5A and 5B. FIG. 5A shows a case where the first immersion mechanism 103 has moved to a location farther from the replacement position (downward in the figure). At this time, since the second immersion mechanism 203 is waiting at the exchange position 206, the first immersion mechanism 103 can perform the immersion operation without interfering with the second immersion mechanism. It is possible. Next, in FIG. 5B, the first immersion mechanism 103 returns to the exchange position 106 and stands by. During that time, the second immersion mechanism 203 can move to the farthest position (upward in the figure) from the replacement position and perform the immersion operation.

As described above, the positional relationship is designed so that when one immersion mechanism moves to the farthest position from one exchange position, it does not interfere with the other immersion mechanism waiting at the other exchange position. This makes it possible to perform the immersion operation in the same place in the crucible without mutual interference between the immersion mechanisms.

In the method of manufacturing a thin plate having such a configuration, it is desirable that the two immersion mechanisms perform the same operation in order to extract a thin plate of the same quality from the two immersion mechanisms. In order for the two immersion mechanisms to perform the same operation, when the two base plates operate on the same straight line, the horizontal operation direction of each operation needs to be symmetric with respect to the crucible. Therefore, it is desirable that the first immersion mechanism and the second immersion mechanism have the same design and are symmetrically disposed with respect to the crucible. (Tact time setting form 1)

A first cycle in which the first immersion mechanism continuously manufactures a thin plate will be described with reference to FIGS. 2 and 3. FIG. The basic mode is the same as the cycle described in the first embodiment.

First, at the base plate replacement position 106, the base plate attached to the first immersion mechanism is removed, and a new base plate is mounted. This operation can be performed simultaneously. Next, the base plate is moved to the position before immersion (corresponding to position 307 in FIG. 3). Next, an immersion operation for immersing the base plate in the melt is performed to grow a thin plate. Next, the base plate is returned from the post-immersion position (corresponding to position 308 in FIG. 3) to the replacement position 106. A series of operations of the first immersion mechanism described above is defined as a first cycle.

Similarly, the second immersion mechanism mounts the base plate at the base plate exchange position 206, moves to the position before immersion, creates a thin plate by immersion operation, and returns to the exchange position 206 from the position after immersion. The operation up to is defined as the second cycle.

In order to make the cycle as fast as possible, the transfer, exchange and return times must be as short as possible. The minimum time of these three operations is determined by the hook of the immersion mechanism. On the other hand, the shortest time of the immersion operation is determined by the manufacturing conditions of the thin plate to be manufactured, so that there is a limit to the shortening due to the specifications of the apparatus. That is, the shortest cycle time is determined by the dipping operation. The immersion operation in the present embodiment is the same as in the first embodiment, and the shortest cycle time is 7 seconds. When manufacturing thin plates, it is necessary to operate the first cycle and the second cycle simultaneously in order to improve the tact time by providing two immersion mechanisms. In this case, it is expected that the tact time can be reduced to half by operating both the first cycle and the second cycle in the shortest time. To do so, the time required for each operation in the first cycle and the operation in the second cycle must be equal (to the minimum time). Therefore, the cycle times required for the first cycle and the second cycle are equal.

In order for the first cycle and the second cycle to operate at the same time, it is necessary for the second base to operate so that the first base is prevented from being immersed while the first base is immersed. It is necessary to stagger the periods of both cycles so as not to perform. The most effective method is to shift both cycles by half a cycle. As a result, when viewed from the melt in the crucible, the interval at which the base plate enters the melt is constant, and the state of the melt when the first base plate and the second base plate enter the melt is constant. And the quality variation of the thin plate can be suppressed.

The tact time for producing a thin plate by the above method will be described with reference to FIG. The horizontal direction in Fig. 6 shows the elapsed time (seconds), and the vertical direction shows the operation of the first immersion mechanism and the second immersion mechanism. The arrow in the figure indicates the time during which the operation is being performed. By delaying the second cycle of the second immersion mechanism by a half cycle with respect to the first cycle of the first immersion mechanism, the base plate between the first immersion mechanism and the second immersion mechanism is melted every 3.5 seconds. It will be alternately immersed in the liquid. The tact time can be reduced to 7 seconds to produce two thin plates, and 3.5 seconds per sheet.

(Tact time setting form 2)

In the tact time setting mode 1, as can be seen in FIG. 6, the second immersion mechanism continues the immersion operation for 0.5 second after the first immersion mechanism starts operating toward the pre-immersion position.

When the size of the base plate is increased, or when the movement time or return stroke is reduced to further reduce the operation time, the first base plate may catch up with the second base plate and cause interference.

Therefore, it is necessary to set a waiting time before, after, or after attaching and removing the base plate. However, as described above, the first cycle time and the second cycle time are desirably the same. Therefore, it is desirable that the standby time included in the first cycle time is equal to the standby time included in the second cycle time.

The takt time when a thin plate is manufactured by the above method will be described with reference to FIG.

By delaying the second cycle by a half cycle with respect to the first cycle, and installing a standby process before replacing the base plate, the second immersion mechanism finishes the immersion operation and the first immersion mechanism moves It can be set to start, and it is possible to avoid interference of the base plate. Also, the first cycle time and the second cycle time are the same time, Therefore, the first immersion mechanism ends the immersion operation and the second immersion mechanism starts moving at the same time. In this way, the two dipping mechanisms can always operate without interfering with each other, even if the two cycles are continued. The base plate will be immersed in the melt every 4 seconds. The tact time can be made in 8 seconds to manufacture two thin plates, and in 4 seconds for one sheet.

(Tact time setting form 3)

Depending on the growth conditions of the thin plate, the immersion operation may be performed after adjusting the temperature (heating or cooling, soaking) of the base plate. The temperature adjustment of the base plate may be performed at any position, but it is preferable to perform the adjustment before the base plate is mounted on the immersion mechanism in order to reduce the cycle time of the immersion mechanism. Specific examples of the temperature control mechanism include a heater capable of heating the base plate to the buffers 104 and 204, a cooling plate for cooling the base plate, and a soot for uniforming the base plate. It is possible to install a constant temperature plate.

In Fig. 1, a one-stage temperature control mechanism for temperature control for 7 seconds was installed in the buffer before the base plate was attached.

The temperature adjustment time varies depending on the growth conditions of the thin plate, but the maximum time given is (cycle time (seconds))-one (mounting time (seconds)). Seconds = 7 seconds. If the time is insufficient in 7 seconds, it is necessary to install temperature control mechanisms for the required number of stages before that. When a temperature control mechanism is installed in the buffer, the number of base plates that stay in the buffer must be at least (number of base plates) loaded from the sub chamber at a time + (the number of stages of the temperature control mechanism). In the present embodiment, the number of sheets that can stay in the buffer is five.

Further, the temperature variation range of the base plate varies depending on the growth conditions, but is preferably as small as possible. However, the temperature adjustment time may vary depending on the condition (surface condition, thickness) of the base plate and individual differences. In this case, it is necessary to replace the base plate after measuring the temperature of the base plate with a thermocouple, radiation thermometer, etc., to reach the specified range. If the temperature reaches within the specified range within the standby time according to the tact time setting mode 2, the cycle time is not affected. If not, it is necessary to delay the mounting of the base plate. At this time, the immersion mechanism of the partner By delaying the ming for the same amount of time, it is possible to prevent interference between the immersion mechanisms and perform continuous operation.

Although the immersion mechanism described in each of the above embodiments is of two systems, it may be of three systems, four systems, or more. It is good to arrange each system symmetrically at equal intervals with respect to the crucible, but it is not necessary that they are at equal intervals.

Also, in each of the above embodiments, an example was described in which the immersion mechanism and the transport mechanism were separated from each other, but the immersion mechanism and the transport mechanism were integrated by extending one end of the immersion mechanism to the sub chamber. can do. Further, although the immersion mechanism and the transport mechanism are arranged to be bent, the immersion mechanism and the transport mechanism may be arranged in a straight line.

The embodiments disclosed this time are to be considered in all respects as illustrative and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims. Industrial applicability

The thin plate manufacturing apparatus of the present invention is capable of immersing a base plate in a melt of a substance containing at least one of a metal material and a semiconductor material, and mounting and removing the base plate at substantially the same exchange position. This is a thin plate manufacturing apparatus having a dipping mechanism for forming a thin plate made of a melt material on the surface of the base plate. The thin plate manufacturing apparatus of the present invention includes a plurality of immersion mechanisms, and the exchange position is different for each immersion mechanism, so that the manufacturing speed of the thin plate can be doubled.

Further, in the thin plate manufacturing apparatus of the present invention, the melt is put in one crucible, and a plurality of dipping mechanisms immerse the base plate in the melt of this one crucible, so that the melt of one crucible is divided into a plurality of systems. Since the base plate immersion mechanism is shared, the quality of thin plates manufactured by multiple systems of immersion mechanisms can be the same.

Further, in the thin plate manufacturing apparatus of the present invention, since a plurality of immersion mechanisms immerse the base plate in the melt substantially near the center of one crucible, the thin plate can be manufactured using the most stable quality of the melt. And a stable thin plate can be obtained. Further, in the thin plate manufacturing apparatus of the present invention, since a plurality of systems of immersion mechanisms are arranged in substantially the same horizontal plane, the configurations of the plurality of systems of immersion mechanisms can be the same.

Further, in the thin plate manufacturing apparatus of the present invention, since a plurality of systems of immersion mechanisms are arranged at symmetrical positions around the crucible, the configurations of the plurality of systems of immersion mechanisms can be the same.

Further, according to the thin plate manufacturing method of the present invention, the base plate can be immersed in a melt of a substance containing at least one of a metal material and a semiconductor material, and the mounting and removing of the base plate can be performed at substantially the same exchange position. This is a method for producing a thin plate having a dipping mechanism for forming a thin plate made of a melt material on the surface of the base plate. The immersion mechanism

After mounting the first base plate, immersing the base plate in the melt, and then removing the base plate as a first cycle, mounting a first immersion mechanism and a second base plate, After the immersion operation of immersing the base plate in the melt and the second cycle of removing the base plate as the second cycle, the production speed can be doubled.

Further, in the method of manufacturing a thin plate according to the present invention, since the times required for the first cycle and the second cycle are substantially equal, both of the two base plate immersion mechanisms can be driven at the same timing.

Further, the thin plate manufacturing method of the present invention operates by shifting the second cycle with respect to the first cycle. In the method of manufacturing a thin plate according to the present invention, the second cycle operates with a half-cycle delay with respect to the first cycle, so that the two base plate immersion mechanisms can be alternately driven, and the manufacturing speed is increased. can do.

In addition, the method for producing a thin plate of the present invention includes a standby step before and / or after mounting and removing the base plate, so that the two base plate immersion mechanisms can be continuously operated without interference.

Claims

The scope of the claims

1. A base plate is immersed in a melt of a substance containing at least one of a metal material and a semiconductor material to form a thin plate made of the melt material on the surface of the base plate. A thin plate manufacturing device equipped with an immersion mechanism for mounting and removing the base plate at the replacement position,

The system is characterized by having a plurality of immersion mechanisms of almost the same configuration, and arranging the immersion mechanisms of the above multiple systems so that the base plate replacement operation in one immersion mechanism does not interfere with the base plate replacement operation in another immersion mechanism. Thin plate manufacturing equipment.

2. The thin plate manufacturing apparatus according to claim 1, wherein the melt is put in one crucible, and the plurality of immersion mechanisms immerse the base plate in the melt in the one crucible.

3. The thin plate manufacturing apparatus according to claim 1, wherein the plurality of immersion mechanisms immerse the base plate in the melt near the center of the one crucible.

4. The thin plate manufacturing apparatus according to claim 1, wherein the plurality of immersion mechanisms are arranged in substantially the same horizontal plane.

5. The thin plate manufacturing apparatus according to claim 1, wherein the plurality of immersion mechanisms are arranged symmetrically with respect to the crucible.

6. A plurality of base plates that can be immersed in a melt of a substance containing at least one of a metal material and a semiconductor material, and the base plate can be mounted and removed at almost the same replacement position. A method for manufacturing a thin plate comprising a dipping mechanism, wherein a thin plate made of the material of the melt is formed on the surface of the base plate, wherein the dipping mechanism includes mounting a first base plate, Immersion in liquid, and after this immersion operation, the first immersion mechanism with the operation of removing the base plate as the first cycle

A thin plate comprising: a second base plate mounted thereon; a base plate immersed in the melt; and a second cycle including an operation of removing the base plate after the immersion operation as a second cycle. Production method.

7. The thin plate manufacturing method according to claim 6, wherein the first cycle and the second cycle operate symmetrically around the crucible.

8. The method of manufacturing a thin plate according to claim 6, wherein the time required for the first cycle and the time required for the second cycle are substantially equal.

9. The thin plate manufacturing method according to claim 8, wherein the operation is performed with a second cycle shifted from the first cycle.

10. The method of manufacturing a thin plate according to claim 8, wherein the second cycle operates with a delay of a half cycle with respect to the first cycle.

11. The method for producing a thin plate according to claim 6, further comprising a standby step before, after, or after the mounting and removal of the base plate.