WO2003083926A2 - Procede et systeme ameliores d'attaque de semi-conducteurs avec utilisation de micro-ondes - Google Patents

Procede et systeme ameliores d'attaque de semi-conducteurs avec utilisation de micro-ondes Download PDF

Info

Publication number
WO2003083926A2
WO2003083926A2 PCT/PL2003/000030 PL0300030W WO03083926A2 WO 2003083926 A2 WO2003083926 A2 WO 2003083926A2 PL 0300030 W PL0300030 W PL 0300030W WO 03083926 A2 WO03083926 A2 WO 03083926A2
Authority
WO
WIPO (PCT)
Prior art keywords
etching
fact
distinguished
alkaline solution
solution
Prior art date
Application number
PCT/PL2003/000030
Other languages
English (en)
Other versions
WO2003083926A3 (fr
Inventor
Jan Dziuban
Rafal Walczak
Original Assignee
Politechnika Wroclawska
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PL353122A external-priority patent/PL203032B1/pl
Priority claimed from PL353123A external-priority patent/PL203081B1/pl
Application filed by Politechnika Wroclawska filed Critical Politechnika Wroclawska
Publication of WO2003083926A2 publication Critical patent/WO2003083926A2/fr
Publication of WO2003083926A3 publication Critical patent/WO2003083926A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching

Definitions

  • the subject of invention is the microwave enhanced method of semiconductors etching and the system for microwave enhanced semiconductors etching, used mainly in the process of micromechanical and microelectronic semiconductor structures etching in alkaline solutions.
  • the method of wet etching of monocrystalline semiconductor materials and the system for this method application is known from Polish description of the Polish patent application No P.330129.
  • the method consists in inserting of monocrystalline semiconductor substrates, designed for selective etching and covered with a protective layer, inside a reaction vessel, filled with anisotropically etching solution, irradiated with microwaves, ranging from 300 MHz to 10 GHz where the power is controlled during the process.
  • the power of microwaves is reduced to the level assuring stabilisation of the alkaline solution temperature at a given level, and after the etching of semiconductor in exposed areas, the microwave generator is switched off, allowing the semiconductor substrate to be cooled down with the help of liquid or gas cooling.
  • the system for application of the method of selective anisotropic etching of semiconductor substrates is equipped with a resonator chamber, connected with microwave generator. Inside the resonator chamber there is a reaction vessel, filled with alkaline solution, where the etched substrates are placed.
  • the method of temperature control inside the microwave chemical reactor is also known from the description of Polish patent application No P.330129.
  • the control is performed in the device, equipped with a closed reaction vessel, filled with solution of reagents, connected with a condenser and pump.
  • the pump maintains constant pressure inside the reaction vessel.
  • the excess energy is dissipated by boiling of reagents solution at a given and stabilised pressure, and the saturated vapour of at least one of the solution components is condensed in the condenser and recirculated to the solution, keeping constant its concentration and temperature at the level of saturated vapour at given pressure.
  • the pressure is controlled by change in delivery of the pump or by allowing additional flow, for instance air, to the pump, outside the reaction vessel across a valve.
  • the delivery of the pump or throttling valve of additional flow may be controlled by typical mass flow controllers, using the signal from a pressure sensor or from the temperature of saturated vapour at the inlet of condenser as a feedback parameter.
  • the method is based on the principle that the closed vessel is filled with alkaline solution, the etched structures are placed inside the vessel and they are etched at elevated temperature in the filed of microwave energy.
  • the subject of invention is the microwave enhanced method of semiconductors etching, consisting in the fact that semiconductor substrates are inserted in water etching solution where they are etched with the use of microwaves.
  • the essence of the method consists in the fact that the alkaline solution is activated and heated by the microwave energy inside the activation chamber of etching solution, where the irradiation is performed by the system of microwave supply at a controlled power level, ranging from 0.1 W/cm- to 20 W/cm ⁇ and in the frequency range from 27 MHz to 14 GHz, then the activated and heated to a given temperature alkaline solution is directed by a conduit system to the reaction vessel, placed outside the resonator chamber, where the etching process of semiconductor structures is carried out. Thermal insulation of reaction vessel is very advantageous for the etching process.
  • the advantage of the method consists in the fact that semiconductor subsfrates are etched in KOH water solutions with the concentration up to 14 M, while the etching solution is activated and heated with microwaves up to the temperature of 90°C.
  • the advantage of the method is the possibility of temperature measurement of the etching solution and maintaining it at a constant level inside the activation chamber or in thermally insulated reaction vessel.
  • the temperature of alkaline solution inside the activation chamber of etching solution is equal to or different from the temperature of the solution inside the thermally insulated reaction vessel.
  • the etching solution can flow with a constant or adjustable flow rate what is also beneficial.
  • the next advantage of the system is the fact that the alkaline solution, after finishing a single etching cycle can be cooled down and redirected to the activation chamber, where its renewed activation and heating can be performed both at atmospheric or elevated pressure.
  • the water solution of KOH is prepared with the use of deionized water.
  • the essential feature of the system consists in the fact that inside the resonator chamber of microwave supplying system the activation chamber of etching solution, filled with alkaline solution is placed; the chamber is connected with a conduit system with a reaction vessel, located outside the resonator chamber, where the etched semiconductor structures are inserted.
  • the activation chamber of etching solution is supplied with alkaline solution from the container of etching solution whereas the alkaline solution is taken off the reaction chamber to the end container.
  • the resonator chamber of the microwave supplying system is equipped with a field mixer.
  • reaction chamber is thermally insulated and that the reaction vessel is equipped with a system for temperature stabilisation.
  • the alkaline solution from the end container can be directed through the condenser and pump to the container of etching solution.
  • the method of semiconductors etching in terms of the invention features with very high etch rate, preserving good anisotropy in low-concentrated and cold alkaline solutions. Irradiation of alkaline solution exclusively inside the resonator chamber of the microwave system and keeping the reaction vessel outside the area of microwave influence, simplifies the design of microwave resonator. Additional advantage of the new system is the fact that reactivity of alkaline solutions can be changed independently by the controlling of microwave power, irradiation time as well as by the flow rate of etching solution i.e. by the time of keeping the etched structures in the solution.
  • the period of time from irradiation to etching can be easily adjusted by the duration of solution flow along the conduit, connecting the resonator with the reactor.
  • the alkaline solution subjected to microwave irradiation, preserves its activity, consisting in acceleration of the etching process even after ceasing the irradiation action.
  • the fact indicates that the microwave irradiation is "memorised” by the solution what as a phenomenon has been observed for the first time.
  • the effect of etching acceleration and memory effect are connected with substantial changes in the properties of water, which is one of the components of alkaline solution.
  • Spatial micromechanical structures, fabricated on semiconductor substrates by the new method feature with low surface roughness; especially smooth are ⁇ 100> silicon surfaces, etched in low concentrated solution, irradiated with high microwave power, at low temperature.
  • Basic technical advantage of the new method is reduction of process temperature with maintaining very high etch rates and very good anisotropy in low concentrated alkaline solutions what is particularly beneficial in micromachining of silicon.
  • Monocrystalline silicon substrates with masking layer of silicon nitride or silicon dioxide, deposited by CND method or silicon oxidation methods, respectively, in which etching patterns were developed, have been etched in water KOH solution successfully.
  • the property of the new method can be used in designing process of the etching systems enabling removal of defected, due to mechanical treatment, surfacial layer from silicon substrates with diameters of 150 mm - 300 mm, typically used for integrated circuit processes, especially in VLSI.
  • the method of microwave enhanced semiconductor etching consists in preparation of semiconductor substrates, designed for etching and covered with a protective layer in which the holes to the substrate surface are patterned.
  • the substrates are inserted in a reaction vessel ⁇ R, filled with alkaline solution, previously activated and heated under the atmospheric pressure, with the microwave energy in the activation chamber of etching solution ZB
  • the etching of semiconductor structures is performed in activated and heated to a given temperature alkaline solution in reaction vessel ⁇ R at atmospheric pressure.
  • the method of semiconductor etching with the use of microwaves is carried out like in example 1 but the microwave irradiation is performed in the microwave supplied system UZM with the power of 3 kW and frequency of 2.45 GHz and after 3 s of activation finishing, the semiconductor substrates are etched in ⁇ 100> crystallographic direction with active 1.5 M KOH solution, heated to the temperature of 60°C in the reaction vessel ⁇ R.
  • Example 3
  • the process of semiconductor etching with the use of microwaves is carried out like in the first example but semiconductor structures are etched in thermally insulated reaction vessel NR and during the process the temperature of alkaline solution in the activation chamber of etching solution ZB is measured and maintained at a constant level while the temperature of alkaline solution in the activation chamber of etching solution ZB 2 is lower than the temperature in thermally insulated reaction vessel NR.
  • the alkaline solution is activated and heated under the atmospheric pressure.
  • the process of semiconductor etching with the use of microwaves is carried out like in the first example but the temperature of etching solution is measured and maintained at a constant level in thermally insulated reaction chamber NR and the etching solution flows with a constant rate, however, the temperature of alkaline solution in the activation chamber of etching solution ZB 2 is higher than the temperature in thermally insulated reaction vessel NR and the alkaline solution is activated and heated under the pressure which exceeds the atmospheric one.
  • the process of semiconductor etching with the use of microwaves is carried out like in the first example but the temperature of alkaline solution inside the activation chamber of etching solution ZB 2 is equal to the temperature in thermally insulated reaction chamber NR and after finishing of one etching cycle the alkaline solution is cooled down in the condenser CH and recirculated to the activation chamber of etching solution ZB 2 ,where it is activated and heated once again.
  • the method of microwave enhanced semiconductor etching consists in preparation of semiconductor substrates, designed for etching and covered with a protective layer in which the holes to the substrate surface are patterned.
  • the substrates are inserted in a activation chamber of etching solution ZB 2 , filled with alkaline solution.
  • the alkaline soltion is activated and heated with microwave power in the activation chamber of etching solution ZB 2 .
  • Microwave irradiation is carried out in the resonator chamber of the microwave supplied system UZM with controlled power and frequency of 14 GHz and the semiconductor substrates are etched in alkaline solution, activated and heated up to the temperature of 90°C under the atmospheric pressure Example 7.
  • the method of semiconductor etching with the use of microwaves is carried out like in example 1 but the microwave irradiation is performed in the microwave supplied system UZM with the power of 1 kW and frequency of 2.45 GHz and after activation finishing, the semiconductor substrates are etched in ⁇ 100> crystallographic direction with active 7.5 M KOH solution, heated to the temperature of 60°C in the reaction vessel NR at the etching rate of ca. 10 ⁇ m/min with the etching anisotropy of 15.
  • the method of semiconductor etching with the use of microwaves is carried out like in example 7 but a forced circulation of etching solution is applied and the etching solution from the activation chamber of etching solution ZB 2 is directed through a condenser CH and pump P to the container of alkaline solution ZB .
  • the method of semiconductor etching with the use of microwaves carried out like in examples 7 and 8, features with etching selectivity of 1 :10000 in relation to densified layers of silicon nitride, deposited by high temperature CND method what means that the use of typical masking layers applied in microelectronics with the thickness of ca. 100 nm, assures good protection of unetched surface.
  • the new method is particularly helpful in etching of the range of useful silicon spatial structures, especially the structures designed for piezoresistive and capacitive pressure sensors or field emitter arrays.
  • etch rate acceleration expressed with acceleration factor SF, defined as a ratio of silicon etch rate by the method accordingly the invention to conventional etch rate, depends on temperature and increases with the temperature lowering, for example, at the temperature of 60°C there is above 20 fold increase in etch rate whereas at 80°C, the increase is ten-fold.
  • the method of semiconductor etching with the use of microwaves carried out like in examples 7 and 8 is distinguished by the fact that the average etch rate of silicon ⁇ 100> plane in KOH solution with the concentration up to 14 M at the temperature up to 90°C is by 2 to 30 times higher than the etch rate obtained by conventional method.
  • Important advantage of the new method of semiconductors etching, particularly with the use of microwaves in an open reactor is the fact, that the etching process progresses very fast, anisotropically and selectively and that the etching process of silicon in low concentrated KOH solutions at the temperature below 70°C features with maintaining of high basic anisotropy V ]00 /N n ] , amounting to ca. 30.
  • very smooth surfaces of deeply etched patterns can be obtained, what is almost impossible by other methods.
  • an activation chamber of etching solution ZB 2 filled with alkaline solution; the chamber is connected with a conduit system with the reaction vessel ⁇ R, where the semiconductor structures are placed, while the activation chamber of alkaline solution ZB is supplied with alkaline solution from the container of etching solution ZB j whereas the alkaline solution is taken off from the reaction vessel ⁇ R to the end container ZB y Example 10.
  • the system for semiconductor etching with the use of microwaves is set up like in example 5 but the resonator chamber of microwave supplying system UZM is equipped with a field mixer.
  • reaction vessel NR is thermally insulated and equipped with the system for temperature stabilisation UST.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Weting (AREA)

Abstract

Cette invention concerne un nouveau procédé d'attaque, avec utilisation de micro-ondes, de substrats semi-conducteurs à graver placés dans une chambre de réaction. Ce procédé se distingue en ce que la solution alcaline est activée et chauffée par énergie micro-onde dans une chambre d'activation renfermant une solution d'attaque (ZB2), avec irradiation sous puissance contrôlée. La solution alcaline activée et chauffée à une température donnée s'écoule par un système de conduit dans un récipient de réaction dans lequel se fait l'attaque des structures semi-conductrices. Ce système amélioré avec recours aux micro-ondes se caractérise en ce que, dans la chambre de résonance du système de création de micro-ondes (UZM) se trouve une chambre d'activation de solution alcaline (ZB2) remplie de ladite solution. La chambre est reliée par un conduit à un récipient de réaction (NR) dans lequel sont disposées les structures semi-conductrices. La chambre d'activation soit est alimentée avec une telle solution depuis le réservoir de solution alcaline (ZB1),laquelle solution est évacuée du récipient de réaction (NR) vers le réservoir d'extrémité (ZB3).
PCT/PL2003/000030 2002-04-02 2003-03-28 Procede et systeme ameliores d'attaque de semi-conducteurs avec utilisation de micro-ondes WO2003083926A2 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
PLP.353122 2002-04-02
PL353122A PL203032B1 (pl) 2002-04-02 2002-04-02 Sposób trawienia półprzewodników z użyciem mikrofal oraz urządzenie do trawienia półprzewodników z użyciem mikrofal
PL353123A PL203081B1 (pl) 2002-04-02 2002-04-02 Sposób trawienia półprzewodników z użyciem mikrofal
PLP.353123 2002-04-02

Publications (2)

Publication Number Publication Date
WO2003083926A2 true WO2003083926A2 (fr) 2003-10-09
WO2003083926A3 WO2003083926A3 (fr) 2004-04-29

Family

ID=28677706

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/PL2003/000030 WO2003083926A2 (fr) 2002-04-02 2003-03-28 Procede et systeme ameliores d'attaque de semi-conducteurs avec utilisation de micro-ondes

Country Status (1)

Country Link
WO (1) WO2003083926A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020042234A1 (fr) * 2018-08-31 2020-03-05 深圳市华星光电技术有限公司 Solution de morsure au cuivre-molybdène efficace et procédé de gravure

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0261007A1 (fr) * 1986-08-28 1988-03-23 Sairem Dispositif de chauffage de liquide par micro-ondes, notamment du sang
WO2000034993A1 (fr) * 1998-12-04 2000-06-15 Jan Dziuban Systeme de gravure anisotrope par voie humide de materiau semi-conducteur monocristallin et dispositif d'application de ce systeme
US6221167B1 (en) * 1998-02-13 2001-04-24 Applied Science Karasawa Lab. & Co., Ltd. Process and system for treatments by fluids
US6248987B1 (en) * 1999-07-29 2001-06-19 Forschungszentrum Karlsruhe Gmbh Microwave system for heating, and controlling the temperature of a heat bath

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0261007A1 (fr) * 1986-08-28 1988-03-23 Sairem Dispositif de chauffage de liquide par micro-ondes, notamment du sang
US6221167B1 (en) * 1998-02-13 2001-04-24 Applied Science Karasawa Lab. & Co., Ltd. Process and system for treatments by fluids
WO2000034993A1 (fr) * 1998-12-04 2000-06-15 Jan Dziuban Systeme de gravure anisotrope par voie humide de materiau semi-conducteur monocristallin et dispositif d'application de ce systeme
US6248987B1 (en) * 1999-07-29 2001-06-19 Forschungszentrum Karlsruhe Gmbh Microwave system for heating, and controlling the temperature of a heat bath

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
BERLAN J: "Microwaves in chemistry: another way of heating reaction mixtures" RADIATION PHYSICS AND CHEMISTRY, ELSEVIER SCIENCE PUBLISHERS BV., AMSTERDAM, NL, vol. 45, no. 4, 1 April 1995 (1995-04-01), pages 581-589, XP004051597 ISSN: 0969-806X *
DZIUBAN J A: "Microwave enhanced fast anisotropic etching of monocrystalline silicon" SENSORS AND ACTUATORS A, ELSEVIER SEQUOIA S.A., LAUSANNE, CH, vol. 85, no. 1-3, 25 August 2000 (2000-08-25), pages 133-138, XP004214460 ISSN: 0924-4247 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020042234A1 (fr) * 2018-08-31 2020-03-05 深圳市华星光电技术有限公司 Solution de morsure au cuivre-molybdène efficace et procédé de gravure

Also Published As

Publication number Publication date
WO2003083926A3 (fr) 2004-04-29

Similar Documents

Publication Publication Date Title
CN101500935B (zh) 蚀刻牺牲氧化硅层的方法
KR0161279B1 (ko) 동결 및 승화에 의한 액체제거를 사용한 미세구조물의 형성
US4973379A (en) Method of aerosol jet etching
US5336356A (en) Apparatus for treating the surface of a semiconductor substrate
JP5524453B2 (ja) シリコンウェーハのエッチング方法及びエッチング装置
US4127437A (en) Process for etching SiO2 utilizing HF vapor and an organic catalyst
US20120272490A1 (en) Method for releasing a thin semiconductor substrate from a reusable template
CN109023311A (zh) 通过脉冲低频射频功率获得高选择性和低应力碳硬膜
WO2017202186A1 (fr) Appareil et procédé de traitement de plaquette
KR100430926B1 (ko) 이산화실리콘의선택적인제거방법
JP2003309100A (ja) レジスト膜除去装置及びレジスト膜除去方法、並びに有機物除去装置及び有機物除去方法
CN108313976A (zh) 一种聚酰亚胺表面微结构制备方法
JP4727794B2 (ja) 表面マイクロマシニング型構造体の製法
EP0747711B1 (fr) Procédé de fabrication d'une machine par micro-usinage
US20040112406A1 (en) Solid CO2 cleaning
Lin et al. Deep dry etching of silicon with scallop size uniformly larger than 300 nm
WO2003083926A2 (fr) Procede et systeme ameliores d'attaque de semi-conducteurs avec utilisation de micro-ondes
US4370192A (en) Apparatus for chemical etching of silicon
US7105447B2 (en) Etching method
Cao et al. Study on the impact of silicon doping level on the trench profile using metal-assisted chemical etching
US20030139057A1 (en) Process and apparatus for removal of photoresist from semiconductor wafers
Chen et al. Aerosol jet etching of fine patterns
PL203081B1 (pl) Sposób trawienia półprzewodników z użyciem mikrofal
WO2000034993A1 (fr) Systeme de gravure anisotrope par voie humide de materiau semi-conducteur monocristallin et dispositif d'application de ce systeme
JP2001185526A (ja) エッチング方法および装置

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): JP US

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR

121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase in:

Ref country code: JP

WWW Wipo information: withdrawn in national office

Country of ref document: JP