WO2003077278A3 - Ionen-implantierungsvorrichtung - Google Patents

Ionen-implantierungsvorrichtung Download PDF

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Publication number
WO2003077278A3
WO2003077278A3 PCT/DE2003/000642 DE0300642W WO03077278A3 WO 2003077278 A3 WO2003077278 A3 WO 2003077278A3 DE 0300642 W DE0300642 W DE 0300642W WO 03077278 A3 WO03077278 A3 WO 03077278A3
Authority
WO
WIPO (PCT)
Prior art keywords
ion
implantation device
sensor
given region
given
Prior art date
Application number
PCT/DE2003/000642
Other languages
English (en)
French (fr)
Other versions
WO2003077278A2 (de
Inventor
Paul Miosga
Juergen Walter
Original Assignee
Infineon Technologies Ag
Paul Miosga
Juergen Walter
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag, Paul Miosga, Juergen Walter filed Critical Infineon Technologies Ag
Publication of WO2003077278A2 publication Critical patent/WO2003077278A2/de
Publication of WO2003077278A3 publication Critical patent/WO2003077278A3/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H01J2237/0041—Neutralising arrangements
    • H01J2237/0044—Neutralising arrangements of objects being observed or treated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31703—Dosimetry

Abstract

Die Erfindung betrifft eine Ionen-Implantierungsvorrichtung mit einer Ionenquelle zum Erzeugen einer Vielzahl von aufgefächerten Ionenstrahlen (I) in einem vorbestimmten Bereich (B), wobei eine Sensor-Positioniervorrichtung (8) einen Ladungssensor (S) zum Erfassen einer elektrischen Aufladung an einem beliebigen Ort (x, y) innerhalb des vorbestimmten Bereichs (B) positioniert. Auf diese Weise erhält man ortsaufgelöste Messparameter für aufgefächerte Ionenstrahlen (I).
PCT/DE2003/000642 2002-03-08 2003-02-27 Ionen-implantierungsvorrichtung WO2003077278A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2002110270 DE10210270A1 (de) 2002-03-08 2002-03-08 Ionen-Implantierungsvorrichtung
DE10210270.8 2002-03-08

Publications (2)

Publication Number Publication Date
WO2003077278A2 WO2003077278A2 (de) 2003-09-18
WO2003077278A3 true WO2003077278A3 (de) 2004-01-29

Family

ID=27797607

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2003/000642 WO2003077278A2 (de) 2002-03-08 2003-02-27 Ionen-implantierungsvorrichtung

Country Status (2)

Country Link
DE (1) DE10210270A1 (de)
WO (1) WO2003077278A2 (de)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0398269A2 (de) * 1989-05-15 1990-11-22 Nissin Electric Company, Limited Ionen-Implantationsgerät
US5811823A (en) * 1996-02-16 1998-09-22 Eaton Corporation Control mechanisms for dosimetry control in ion implantation systems
JPH1186775A (ja) * 1997-09-12 1999-03-30 Sony Corp イオン注入装置及びイオン注入方法
WO2002043104A2 (en) * 2000-11-22 2002-05-30 Varian Semiconductor Equipment Associates, Inc. Hybrid scanning system and methods for ion implantation

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05106037A (ja) * 1991-10-16 1993-04-27 Mitsubishi Electric Corp イオン注入装置及びその制御方法
US6541780B1 (en) * 1998-07-28 2003-04-01 Varian Semiconductor Equipment Associates, Inc. Particle beam current monitoring technique
DE19838553B4 (de) * 1998-08-25 2010-08-12 Thermo Fisher Scientific (Bremen) Gmbh Faraday-Auffänger zur Messung von Ionenströmen in Massenspektrometern
US6323497B1 (en) * 2000-06-02 2001-11-27 Varian Semiconductor Equipment Assoc. Method and apparatus for controlling ion implantation during vacuum fluctuation
JP4252237B2 (ja) * 2000-12-06 2009-04-08 株式会社アルバック イオン注入装置およびイオン注入方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0398269A2 (de) * 1989-05-15 1990-11-22 Nissin Electric Company, Limited Ionen-Implantationsgerät
US5811823A (en) * 1996-02-16 1998-09-22 Eaton Corporation Control mechanisms for dosimetry control in ion implantation systems
JPH1186775A (ja) * 1997-09-12 1999-03-30 Sony Corp イオン注入装置及びイオン注入方法
WO2002043104A2 (en) * 2000-11-22 2002-05-30 Varian Semiconductor Equipment Associates, Inc. Hybrid scanning system and methods for ion implantation

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
FUJISHITA N ET AL: "A HIGH-RESOLUTION BEAM PROFILE MEASURING SYSTEM FOR HIGH-CURRENT ION IMPLANTERS", NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, SECTION - B: BEAM INTERACTIONS WITH MATERIALS AND ATOMS, NORTH-HOLLAND PUBLISHING COMPANY. AMSTERDAM, NL, vol. B55, no. 1 / 4, 2 April 1991 (1991-04-02), pages 90 - 93, XP000230668, ISSN: 0168-583X *
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 08 30 June 1999 (1999-06-30) *

Also Published As

Publication number Publication date
DE10210270A1 (de) 2003-10-02
WO2003077278A2 (de) 2003-09-18

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