WO2003069385A1 - Polarization independent optical channel waveguide - Google Patents
Polarization independent optical channel waveguide Download PDFInfo
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- WO2003069385A1 WO2003069385A1 PCT/NL2003/000102 NL0300102W WO03069385A1 WO 2003069385 A1 WO2003069385 A1 WO 2003069385A1 NL 0300102 W NL0300102 W NL 0300102W WO 03069385 A1 WO03069385 A1 WO 03069385A1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/126—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind using polarisation effects
Definitions
- the invention relates to a light-conducting channel structure comprising a light- conducting core with a thickness dk and a width wk, which light-conducting core is at least partially enclosed by surrounding material with a lower refractive index no than the refractive index of the light-conducting core nk.
- Such a channel structure generally comprises a light-conducting core resting on a buffer layer and covered by a coating.
- a coating For such light-conducting channel structures the following more general requirements can be listed as they exist in practice:
- the material enclosing the core respectively the buffer layer and coating consist of silicon oxide; in the stated wavelength range silicon oxide has a refractive index varying between about 1.44 and 1.47, depending on the production technology parameters;
- the core consists of silicon oxynitride; in the stated wavelength range silicon oxynitride has a refractive index varying between about 1.44 and 2, and has a material birefringence, i.e. a difference between the refractive index for TM respectively TE-polarized light, of between about 0.5" 10-3 and 2.5"10-3, this depending on the precise composition and the production technology parameters;
- IX the possibility of realizing low-loss bends, i.e. ⁇ 0.01dB/90D, and sharp bends, i.e. with a radius of ⁇ 1 mm, and of realizing compact integrated optical devices on the smallest possible surface area;
- the thickness of the light-conducting core dk lies between 0.2 ⁇ m and 1.5 ⁇ m; this is related to the desired optical behaviour and to technological and economic preconditions, such as the maximum time for deposition, the maximum etching time, the maximum thickness of the photo emulsion layer used as etching mask, the maximum bending of the whole structure, including the carrier, as a result of mechanical stress, and the maximum contamination of the deposition chamber;
- the width of the light-conducting core wk lies between 3 ⁇ m and 12 ⁇ m; this is related to the desired optical behaviour and to technological and economic preconditions, such as the limits to the ability to make and reproduce smaller structures and the related production costs;
- the channel birefringence i.e. the difference between the effective refractive indices for TM respectively TE-polarized light waves being propagated through the light-conducting channel structure, is within 5" 10-5, irrespective of the following technological tolerances: uncertainty in the refractive index of the core material of about 3 " 10-4; uncertainty in the thickness of the core of about 1%; and uncertainty in the width of the core of about 0.1 ⁇ m;
- the channel birefringence is within 5 " 10-5, irrespective of the following technological tolerance: uncertainty in the material birefringence of the core material of about 1 " 10-4;
- the channel birefringence is within 5" 10-5 irrespective of the thickness of the core
- the thickness of a possible slab is less than 10% of the thickness of the light- conducting core, and preferably equals 0; this is related to the desired minimum index contrast; if the buffer layer and the coating have the same refractive indices and the thickness of the slab equals 0, the etching depth can then be wholly eliminated as technological parameter for the behaviour of the light- conducting channel structure.
- the article furthermore provides no clear values, of for instance the refractive index to be selected for the light-conducting core, the material birefringence, the dimensions to be selected for the light-conducting channel structure and so on, and to the extent that any values are disclosed, these lie outside the proposed ranges according to the present invention.
- the object of the article be compared to that of the invention.
- the object of the present invention is to provide a polarization-independent light- conducting channel structure which fulfils the stated requirements and preconditions, and which structure can be manufactured relatively simply with standard thin-film techniques, lithographic techniques and etching techniques while applying common materials, preferably from the much used "silicon oxynitride materials system".
- the invention provides for this purpose a light-conducting channel structure of the type stated in the preamble, characterized in that the light-conducting core at least partly comprises light-conducting material with: a refractive index nk of between 1.5 and 1.6, and a material birefringence, i.e. the difference between the refractive index for TM respectively TE-polarized light, of between about 0.5"10-3 and 2.5"10-3; dk lies between 0.2 ⁇ m and 1.5 ⁇ m and wk lies between 3 ⁇ m and 12 ⁇ m.
- a polarization-independent channel structure clearly differs from the polarization conversion, rotation and filtering proposed by Min-Cheol Oh.
- channel birefringence can be modified using a special "stress applying film” applied for the purpose (EP 0297851).
- stress applying film applied for the purpose
- a preferred embodiment of a light-conducting channel structure according to the invention is characterized herein in that: nk lies between 1.51 and 1.60; dk lies between 0.2 ⁇ m en 1.2 ⁇ m, and wk lies between 3 ⁇ m and 6 ⁇ m.
- nk lies between 1.51 and 1.60
- dk lies between 0.2 ⁇ m en 1.2 ⁇ m
- wk lies between 3 ⁇ m and 6 ⁇ m.
- nk lies between 1.51 and 1.54; dk lies between 0.6 ⁇ m and 1.1 ⁇ m, and wk lies between 3 ⁇ m and 4 ⁇ m.
- Yet another preferred embodiment of a light-conducting channel structure according to the invention has the feature that: nk lies between 1.53 and 1.58; dk lies between 0.2 ⁇ m and 0.9 ⁇ m, and wk between 3 ⁇ m and 6 ⁇ m.
- nk lies between 1.53 and 1.58; dk lies between 0.2 ⁇ m and 0.9 ⁇ m, and wk between 3 ⁇ m and 6 ⁇ m.
- Yet another further preferred embodiment of a light-conducting channel structure according to the invention has the feature that: nk lies between 1.56 and 1.58; dk lies between 0.2 ⁇ m and 0.3 ⁇ m, and wk lies between 5 ⁇ m and 6 ⁇ m.
- nk lies between 1.56 and 1.58; dk lies between 0.2 ⁇ m and 0.3 ⁇ m, and wk lies between 5 ⁇ m and 6 ⁇ m.
- Yet another further preferred embodiment of a light-conducting channel structure according to the invention has the feature that: nk lies between 1.51 and 1.54; dk lies between 0.6 ⁇ m and 1.2 ⁇ m, and wk lies between 3 ⁇ m and 9 ⁇ m.
- nk lies between 1.51 and 1.54; dk lies between 0.6 ⁇ m and 1.2 ⁇ m, and wk lies between 3 ⁇ m and 9 ⁇ m.
- Yet another further preferred embodiment of a light-conducting channel structure according to the invention has the feature that: nk - no lies between 0.067 and 0.077, preferably between 0.067 and 0.072; dk lies between 0.6 ⁇ m and 0.9 ⁇ m, preferably between 0.80 ⁇ m and 0.85 ⁇ m, and wk lies between 3 ⁇ m and 4 ⁇ m, preferably between 3.2 ⁇ m and 3.3 ⁇ m.
- V which herein also fulfil the said requirements I-IV and comply with said preconditions rX-XII, and also, within a determined thickness range, with said precondition XIV.
- the surrounding material can herein comprise: a buffer layer at least partly adjoining a first flat side of the core and a coating at least partly adjoining a second flat side of the core; and the light-conducting channel structure also comprises a slab, which slab lies at least partially between the buffer layer and the coating, wherein the thickness of the slab is less than 0.1 times dk, and preferably equal to 0.
- the channel structure then also complies with the stated precondition XV.
- the core can substantially consist at least partially of silicon oxynitride.
- the refractive index of silicon oxynitride lies in the desired range and silicon oxynitride is much used in light-conducting channel structures manufactured by way of silicon technology.
- the channel structure then also complies with the stated preconditions VI and VIII.
- the surrounding material can then substantially consist at least partially of silicon dioxide.
- the refractive index of silicon dioxide lies in the desired range and silicon dioxide is much used in light-conducting channel structures manufactured by way of silicon technology.
- the channel structure then also complies with the stated preconditions VI and VII.
- the invention is elucidated hereinbelow with reference to a cross-section shown in figure 1 of a non-limitative embodiment of a light-conducting channel structure according to the invention.
- the light-conducting channel structure 1 in figure 1 is built up of a silicon oxide buffer layer 2 with a refractive index nb, which buffer layer 2 rests on a substrate (not shown).
- Core 3 is etched from a silicon oxynitride layer (dotted). Because etching does not take place all the way through to buffer layer 2, there remains a slab 4 with a thickness ds.
- a silicon oxide coating 5 with a refractive index nd is applied over the whole of core 3 and slab 4 so that core 3 adjoins coating 5 with a second flat side 7.
- the light-conducting channel structure 1 is relatively simple to manufacture with standard thin-film techniques, lithographic techniques and etching techniques with the use of common materials from the much used "silicon oxynitride materials system". With a correct choice of the geometry (wk, dk, ds) and material parameters (nb, nk, nd ), the light-conducting channel structure 1 will fulfil the stated more general requirements occurring in practice, wherein the stated more technological preconditions will also be met.
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
- Polarising Elements (AREA)
Abstract
The invention relates to a light-conducting channel structure comprising a light-conducting core with a thickness dk and width wk, which light-conducting core is at least partially enclosed by surrounding material with a lower refractive index no, characterized in that: the light-conducting core at least partly comprises light-conducting material with: a refractive index nk of between 1.5 and 1.6 and a materiel birefringence, i.e. the difference between the refractive index for TM respectively TE-polarized light, of between 0.5'10-3 and 2.5'10-3; dk lies between 0.2 µm and 1.5 µm, and wk lies between 3 µm and 12 µm.
Description
POLARIZATION INDEPENDENT OPTICAL CHANNEL WAVEGUIDE
The invention relates to a light-conducting channel structure comprising a light- conducting core with a thickness dk and a width wk, which light-conducting core is at least partially enclosed by surrounding material with a lower refractive index no than the refractive index of the light-conducting core nk.
There exists a great need, particularly for telecommunications applications, for light- conducting channel structures with dimensions on micro-scale which must satisfy a large number of use and production requirements. Such a channel structure generally comprises a light-conducting core resting on a buffer layer and covered by a coating. For such light-conducting channel structures the following more general requirements can be listed as they exist in practice:
I. suitable for the third telecommunication window (wavelength range 1530-1565 nm);
II. monomodality;
III. low losses when coupled to a glass fibre; optionally with application of an adiabatic spot-size transformer (see for instance K. Worhoff et al.; J. of Lightwave Technology, vol.17, pp. 1401-1407, 1999); IV. the possibility of realizing low-loss, sharp bends, and
V. polarization-independent behaviour.
The following more technological preconditions can further be stated:
VI. use of silicon-compatible technology; this technology is highly suitable and is frequently applied for the manufacture of light- conducting channel structures on a basis of silicon, silicon oxide, silicon nitride, silicon oxynitride or doped silica;
VII. the material enclosing the core respectively the buffer layer and coating consist of silicon oxide; in the stated wavelength range silicon oxide has a refractive index varying between about 1.44 and 1.47, depending on the production technology parameters;
VIII. the core consists of silicon oxynitride; in the stated wavelength range silicon oxynitride has a refractive index varying between about 1.44 and 2, and has a material birefringence, i.e. a difference between the
refractive index for TM respectively TE-polarized light, of between about 0.5" 10-3 and 2.5"10-3, this depending on the precise composition and the production technology parameters;
IX. the possibility of realizing low-loss bends, i.e. < 0.01dB/90D, and sharp bends, i.e. with a radius of < 1 mm, and of realizing compact integrated optical devices on the smallest possible surface area;
X. the thickness of the light-conducting core dk lies between 0.2 μm and 1.5 μm; this is related to the desired optical behaviour and to technological and economic preconditions, such as the maximum time for deposition, the maximum etching time, the maximum thickness of the photo emulsion layer used as etching mask, the maximum bending of the whole structure, including the carrier, as a result of mechanical stress, and the maximum contamination of the deposition chamber;
XI. the width of the light-conducting core wk lies between 3 μm and 12 μm; this is related to the desired optical behaviour and to technological and economic preconditions, such as the limits to the ability to make and reproduce smaller structures and the related production costs;
XII. the channel birefringence, i.e. the difference between the effective refractive indices for TM respectively TE-polarized light waves being propagated through the light-conducting channel structure, is within 5" 10-5, irrespective of the following technological tolerances: uncertainty in the refractive index of the core material of about 3 " 10-4; uncertainty in the thickness of the core of about 1%; and uncertainty in the width of the core of about 0.1 μm;
XIII. the channel birefringence is within 5 " 10-5, irrespective of the following technological tolerance: uncertainty in the material birefringence of the core material of about 1 " 10-4;
XIV. the channel birefringence is within 5" 10-5 irrespective of the thickness of the core, and
XV. the thickness of a possible slab is less than 10% of the thickness of the light- conducting core, and preferably equals 0; this is related to the desired minimum index contrast; if the buffer layer and the coating have the same refractive indices and the thickness of the slab equals 0, the etching depth can then be wholly eliminated as technological parameter for the behaviour of the light- conducting channel structure.
The article "Explicit vector beam propagation method for uniaxial poled polymer waveguide devices", by Min-Cheol Oh et al, LEOS '94 conference proceedings IEEE Lasers and electro-optics society 1994, 7th annual meeting, describes a method for propagating optical signals in uniaxial poled waveguide devices. This is only a very general article describing a calculating method and a polarization converter instead of a polarization-independent waveguide. The article furthermore provides no clear values, of for instance the refractive index to be selected for the light-conducting core, the material birefringence, the dimensions to be selected for the light-conducting channel structure and so on, and to the extent that any values are disclosed, these lie outside the proposed ranges according to the present invention. Nor, finally, can the object of the article be compared to that of the invention.
The object of the present invention is to provide a polarization-independent light- conducting channel structure which fulfils the stated requirements and preconditions, and which structure can be manufactured relatively simply with standard thin-film techniques, lithographic techniques and etching techniques while applying common materials, preferably from the much used "silicon oxynitride materials system".
The invention provides for this purpose a light-conducting channel structure of the type stated in the preamble, characterized in that the light-conducting core at least partly comprises light-conducting material with: a refractive index nk of between 1.5 and 1.6, and a material birefringence, i.e. the difference between the refractive index for TM respectively TE-polarized light, of between about 0.5"10-3 and 2.5"10-3; dk lies between 0.2 μm and 1.5 μm and wk lies between 3 μm and 12 μm. Within the given parameter window an in principle unlimited number of channel structures can be found which fulfil said requirement V, which herein also fulfil the said requirements I and III and comply with said preconditions X and XI. Such a polarization-independent channel structure clearly differs from the polarization conversion, rotation and filtering proposed by Min-Cheol Oh.
In addition to the above described prior art, a number of methods are known to control the birefringence of a light-conducting channel. It is possible to attempt to select the coefficients of expansion of the different layers (carrier, buffer layer, coating, core) as
well as possible so that the mechanical stresses are minimal, and so control the polarization-dependence of the channel (DE 4433738). This is possible for instance by doping one or more layers (EP 0907090, EP 0697605, JP 5-181031, EP 0322744, JP 5- 257021). It is also possible to reduce mechanical stresses by making changes in the mechanical structure, for instance by etching away a part of the substrate (EP 0678764). Or the channel birefringence can be modified using a special "stress applying film" applied for the purpose (EP 0297851). There are also several other methods not further specified here (for instance WO 96/27146, US 5090790). All these methods have the drawback of being relatively complicated and entailing extra production time and costs.
In addition, it is known to be possible to choose the geometry such that the material birefringence is compensated by the geometrical birefringence. An example hereof is found in Hoffmann, M. et al.; ECIO 1995. The drawback of the channel structure described herein is that low-loss bends are only possible with large radii in the order of centimetres. A second example is found in Bona, G.L.; "Optical Engineering, special issue on Fiber optic data communication", 1998. A thick core layer is however necessary here, so that the stated technological conditions, such as the maximum time for deposition, the maximum etching time and so on, are not met.
The article "Versatile Silicon Oxynitride Planar Lightwave Circuits for interconnect applications", by G.L. Bona et al., Parallel interconnects 1999 proceedings, the 6th International conference on Anchorage, describes sensitive flat circuits for light waves manufactured from silicon oxide with which bending angles with a radius of 1.5 mm can be realized, while according to specific preferred embodiments of the present invention much smaller bending angles still (< 1 mm, for instance 0.6 mm) are possible. Use is made here of a technique which differs from the light-conducting channel structure according to the invention inter alia in that the dimensions dk and wk of the light-conducting core and the refractive index nk are different from the present invention.
The article "Silicon-oxynitride layers for optical waveguide applications", by R. German, Electrochemical society proceedings part 99-6, 2 May 1999, concurs to a significant extent with the above mentioned article by G.L. Bona. For comment on this article, reference is therefore made to the article by Bona.
A preferred embodiment of a light-conducting channel structure according to the invention is characterized herein in that: nk lies between 1.51 and 1.60; dk lies between 0.2 μm en 1.2 μm, and wk lies between 3 μm and 6 μm. Within the stated parameter window an in principle unlimited number of channel structures can be found which fulfil said requirement V, which herein also fulfil the said requirements I, II and III and comply with said preconditions X and XL
Another preferred embodiment of a light-conducting channel structure according to the invention has the feature that nk lies between 1.51 and 1.54; dk lies between 0.6 μm and 1.1 μm, and wk lies between 3 μm and 4 μm. Within the given parameter window an in principle unlimited number of channel structures can be found which fulfil said requirement V, which herein also fulfil the said requirements I-IV and comply with said preconditions IX, X and XL
Yet another preferred embodiment of a light-conducting channel structure according to the invention has the feature that: nk lies between 1.53 and 1.58; dk lies between 0.2 μm and 0.9 μm, and wk between 3 μm and 6 μm. Within the given parameter window an in principle unlimited number of channel structures can be found which fulfil said requirement V, which herein also fulfil the said requirements I, II and III and comply with said preconditions X, XI and XII.
Yet another further preferred embodiment of a light-conducting channel structure according to the invention has the feature that: nk lies between 1.56 and 1.58; dk lies between 0.2 μm and 0.3 μm, and wk lies between 5 μm and 6 μm. Within the given parameter window an in principle unlimited number of channel structures can be found which fulfil said requirement V, which herein also fulfil the said requirements I, II and III and comply with said preconditions X-XIII.
Yet another further preferred embodiment of a light-conducting channel structure according to the invention has the feature that: nk lies between 1.51 and 1.54; dk lies between 0.6 μm and 1.2 μm, and wk lies between 3 μm and 9 μm. Within the given parameter window an in principle unlimited number of channel structures can be found which fulfil said requirement V, which herein also fulfil the said requirements I and III
and comply with said preconditions X and XI, and also, within a determined thickness range, with said precondition XIV.
Yet another further preferred embodiment of a light-conducting channel structure according to the invention has the feature that: nk - no lies between 0.067 and 0.077, preferably between 0.067 and 0.072; dk lies between 0.6 μm and 0.9 μm, preferably between 0.80 μm and 0.85 μm, and wk lies between 3 μm and 4 μm, preferably between 3.2 μm and 3.3 μm. Within the given parameter window an in principle unlimited number of channel structures can be found which fulfil said requirement V, which herein also fulfil the said requirements I-IV and comply with said preconditions rX-XII, and also, within a determined thickness range, with said precondition XIV.
The surrounding material can herein comprise: a buffer layer at least partly adjoining a first flat side of the core and a coating at least partly adjoining a second flat side of the core; and the light-conducting channel structure also comprises a slab, which slab lies at least partially between the buffer layer and the coating, wherein the thickness of the slab is less than 0.1 times dk, and preferably equal to 0. The channel structure then also complies with the stated precondition XV.
Here the core can substantially consist at least partially of silicon oxynitride. The refractive index of silicon oxynitride lies in the desired range and silicon oxynitride is much used in light-conducting channel structures manufactured by way of silicon technology. The channel structure then also complies with the stated preconditions VI and VIII.
The surrounding material can then substantially consist at least partially of silicon dioxide. The refractive index of silicon dioxide lies in the desired range and silicon dioxide is much used in light-conducting channel structures manufactured by way of silicon technology. The channel structure then also complies with the stated preconditions VI and VII.
The invention is elucidated hereinbelow with reference to a cross-section shown in figure 1 of a non-limitative embodiment of a light-conducting channel structure according to the invention.
The light-conducting channel structure 1 in figure 1 is built up of a silicon oxide buffer layer 2 with a refractive index nb, which buffer layer 2 rests on a substrate (not shown). A light-conducting core 3 with a refractive index nk, a thickness dk and a width wk, adjoins buffer layer 2 with a first flat side 6. Core 3 is etched from a silicon oxynitride layer (dotted). Because etching does not take place all the way through to buffer layer 2, there remains a slab 4 with a thickness ds. A silicon oxide coating 5 with a refractive index nd is applied over the whole of core 3 and slab 4 so that core 3 adjoins coating 5 with a second flat side 7.
The light-conducting channel structure 1 is relatively simple to manufacture with standard thin-film techniques, lithographic techniques and etching techniques with the use of common materials from the much used "silicon oxynitride materials system". With a correct choice of the geometry (wk, dk, ds) and material parameters (nb, nk, nd ), the light-conducting channel structure 1 will fulfil the stated more general requirements occurring in practice, wherein the stated more technological preconditions will also be met.
Claims
1. Light-conducting channel structure (1), comprising a light-conducting core (3) with a thickness dk and a width wk, which light-conducting core (3) is at least partially enclosed by surrounding material (2,5) with a lower refractive index no (nb,nd) than the refractive index of the light-conducting core nk, characterized in that: the light-conducting core (3) at least partly comprises light-conducting material with:
- a refractive index nk of between 1.5 and 1.6, and
- a material birefringence, i.e. the difference between the refractive index for TM respectively TE-polarized light, of between 0.5"10-3 and 2.5"10-3,
- dk lies between 0.2 μm and 1.5 μm, and
- wk lies between 3 μm and 12 μm.
2. Light-conducting channel structure (1) as claimed in claim 1, characterized in that nk lies between 1.51 and 1.60; dk lies between 0.2 μm en 1.2 μm, and wk lies between 3 μm and 6 μm.
3. Light-conducting channel structure (1) as claimed in claim 1, characterized in that nk lies between 1.51 and 1.54; dk lies between 0.6 μm and 1.1 μm, and wk lies between 3 μm and 4 μm.
4. Light-conducting channel structure (1) as claimed in claim 1, characterized in that nk lies between 1.53 and 1.58; dk lies between 0.2 μm and 0.9 μm, and wk lies between 3 μm and 6 μm.
5. Light-conducting channel structure (1) as claimed in claim 1, characterized in that nk lies between 1.56 and 1.58; dk lies between 0.2 μm and 0.3 μm, and wk lies between 5 μm and 6 μm.
6. Light-conducting channel structure (1) as claimed in claim 1, characterized in that nk lies between 1.51 and 1.54; dk lies between 0.6 μm and 1.2 μm, and wk lies between 3 μm and 9 μm.
7. Light-conducting channel structure (1) as claimed in claim 1, characterized in that nk - no (nb,nd) lies between 0.067 and 0.077, preferably between 0.067 and 0.072; dk lies between 0.6 μm and 0.9 μm, preferably between 0.80 μm and 0.85 μm, and wk lies between 3 μm and 4 μm, preferably between 3.2 μm and 3.3 μm.
8. Light-conducting channel structure (1) as claimed in any of the foregoing claims, characterized in that the surrounding material (2,5) comprises: a buffer layer (2) at least partly adjoining a first flat side (6) of the core (3), and a coating (5) at least partly adjoining a second flat side (7) of the core (3); the light-conducting channel structure (1) also comprises a slab (4), which slab (4) lies at least partially between the buffer layer (2) and the coating (5), and the thickness of the slab (ds) is less than 0.1 times dk, and is preferably equal to 0.
9. Light-conducting channel structure (1) as claimed in any of the foregoing claims, characterized in that the light-conducting core (3) substantially consists at least partially of silicon oxynitride.
10. Light-conducting channel structure (1) as claimed in any of the foregoing claims, characterized in that the surrounding material (2,5) substantially consists at least partially of silicon dioxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AU2003211323A AU2003211323A1 (en) | 2002-02-12 | 2003-02-12 | Polarization independent optical channel waveguide |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL1019948 | 2002-02-12 | ||
| NL1019948A NL1019948C2 (en) | 2002-02-12 | 2002-02-12 | Polarization independent light-conducting channel structure. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2003069385A1 true WO2003069385A1 (en) | 2003-08-21 |
Family
ID=27730975
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/NL2003/000102 WO2003069385A1 (en) | 2002-02-12 | 2003-02-12 | Polarization independent optical channel waveguide |
Country Status (3)
| Country | Link |
|---|---|
| AU (1) | AU2003211323A1 (en) |
| NL (1) | NL1019948C2 (en) |
| WO (1) | WO2003069385A1 (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4781424A (en) * | 1986-07-28 | 1988-11-01 | Nippon Telegraph And Telephone Corporation | Single mode channel optical waveguide with a stress-induced birefringence control region |
| EP0678764A1 (en) * | 1994-04-22 | 1995-10-25 | AT&T Corp. | Method for making polarization independent silica optical circuits |
| WO2001059495A1 (en) * | 2000-02-10 | 2001-08-16 | Nippon Telegraph And Telephone Corporation | Waveguide optical interferometer |
-
2002
- 2002-02-12 NL NL1019948A patent/NL1019948C2/en not_active IP Right Cessation
-
2003
- 2003-02-12 WO PCT/NL2003/000102 patent/WO2003069385A1/en not_active Application Discontinuation
- 2003-02-12 AU AU2003211323A patent/AU2003211323A1/en not_active Abandoned
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4781424A (en) * | 1986-07-28 | 1988-11-01 | Nippon Telegraph And Telephone Corporation | Single mode channel optical waveguide with a stress-induced birefringence control region |
| EP0678764A1 (en) * | 1994-04-22 | 1995-10-25 | AT&T Corp. | Method for making polarization independent silica optical circuits |
| WO2001059495A1 (en) * | 2000-02-10 | 2001-08-16 | Nippon Telegraph And Telephone Corporation | Waveguide optical interferometer |
Non-Patent Citations (10)
| Title |
|---|
| AARNIO J ET AL: "Birefringence control and dispersion characteristics of silicon oxynitride optical waveguides", ELECTRONICS LETTERS, 5 DEC. 1991, UK, vol. 27, no. 25, pages 2317 - 2318, XP002216275, ISSN: 0013-5194 * |
| BONA G L ET AL: "Versatile silicon-oxynitride planar lightwave circuits for interconnect applications", PARALLEL INTERCONNECTS, 1999. (PI '99). PROCEEDINGS. THE 6TH INTERNATIONAL CONFERENCE ON ANCHORAGE, AK, USA 17-19 OCT. 1999, LOS ALAMITOS, CA, USA,IEEE COMPUT. SOC, US, 17 October 1999 (1999-10-17), pages 145 - 148, XP010360347, ISBN: 0-7695-0440-X * |
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| AU2003211323A1 (en) | 2003-09-04 |
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