WO2003060967A1 - Susceptor for epitaxial growth and epitaxial growth method - Google Patents
Susceptor for epitaxial growth and epitaxial growth method Download PDFInfo
- Publication number
- WO2003060967A1 WO2003060967A1 PCT/US2002/040842 US0240842W WO03060967A1 WO 2003060967 A1 WO2003060967 A1 WO 2003060967A1 US 0240842 W US0240842 W US 0240842W WO 03060967 A1 WO03060967 A1 WO 03060967A1
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- WIPO (PCT)
- Prior art keywords
- bottom wall
- susceptor
- holes
- epitaxial growth
- semiconductor wafer
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 63
- 239000007789 gas Substances 0.000 claims abstract description 65
- 239000004065 semiconductor Substances 0.000 claims abstract description 61
- 239000012159 carrier gas Substances 0.000 claims abstract description 28
- 239000000463 material Substances 0.000 claims description 21
- 239000007787 solid Substances 0.000 claims description 13
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 2
- 230000002093 peripheral effect Effects 0.000 abstract description 14
- 235000012431 wafers Nutrition 0.000 description 209
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 53
- 229910052710 silicon Inorganic materials 0.000 description 53
- 239000010703 silicon Substances 0.000 description 53
- 239000002019 doping agent Substances 0.000 description 52
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 21
- 229910010271 silicon carbide Inorganic materials 0.000 description 21
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 16
- 230000000052 comparative effect Effects 0.000 description 16
- 230000008569 process Effects 0.000 description 15
- 238000012360 testing method Methods 0.000 description 15
- 238000009826 distribution Methods 0.000 description 11
- 238000012545 processing Methods 0.000 description 11
- 230000015556 catabolic process Effects 0.000 description 10
- 230000007423 decrease Effects 0.000 description 10
- 238000006731 degradation reaction Methods 0.000 description 10
- 230000001681 protective effect Effects 0.000 description 10
- 230000003028 elevating effect Effects 0.000 description 9
- 238000007599 discharging Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000011109 contamination Methods 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910003822 SiHCl3 Inorganic materials 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000007865 diluting Methods 0.000 description 2
- 238000005247 gettering Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910003910 SiCl4 Inorganic materials 0.000 description 1
- 229910003818 SiH2Cl2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45589—Movable means, e.g. fans
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
Definitions
- This invention relates to a susceptor for epitaxial growth and an epitaxial growth method, and in particular relates to a susceptor for epitaxial growth and epitaxial growth technology for use in promoting growth of an epitaxial film on the surface of a semiconductor wafer.
- epitaxial wafers where an epitaxial film is formed on the surface of a silicon wafer are widely used as silicon wafers for use with MOS devices. These epitaxial wafers provide improved yield for gate oxidation films of MOS devices, and have superior characteristics such as the reduction of parasitic capacitance, the prevention of soft errors, improved gettering performance, and improved mechanical strength.
- a type where a wafer is transferred using a Bernoulli chuck method or elevating method using a transportation jig can be classified into two types: a type where a wafer is transferred using a Bernoulli chuck method or elevating method using a transportation jig; and a type where the lower surface of the wafer is supported using pins, so that transfer is achieved by raising the pins.
- a semiconductor wafer is mounted on a single susceptor arranged horizontally in the apparatus. The wafer is then raised to a high temperatureusingaheat source suchas infraredlamps, etc. located around the wafer. Epitaxial growth is then initiated at the wafer surface by flowing a reactive gas over the surface of the wafer at a high-temperature while rotating the susceptor.
- FIG. 19 is a cross-sectional view schematically showing an epitaxial growth apparatus of the prior art.
- FIG.20 is a plane view schematically showing a susceptor for epitaxial growth of the prior art.
- FIG. 21 is a further cross-sectional view schematically showing a susceptor for epitaxial growth of the prior art .
- FIG.22 is a further cross-sectional view schematically showing a design of a susceptor for epitaxial growth of the prior art.
- FIG. 23 is a further plane view schematically showing of a susceptor for epitaxial growth of the prior art. As shown in FIG.19 to FIG.22, the epitaxial growthapparatus
- Appatus 1 internally contains an epitaxial film forming chamber (hereinafter referred to as "apparatus") 1 internally contains an epitaxial film forming chamber (hereinafter referred to as "apparatus") 1 internally contains an epitaxial film forming chamber (hereinafter referred to as "apparatus") 1 internally contains an epitaxial film forming chamber (hereinafter referred to as "apparatus") 1 internally contains an epitaxial film forming chamber (hereinafter referred to as "apparatus") 1 internally contains an epitaxial film forming chamber (hereinafter referred to as "apparatus") 1 internally contains an epitaxial film forming chamber (hereinafter referred to as "apparatus") 1 internally contains an epitaxial film forming chamber (hereinafter referred to as "apparatus") 1 internally contains an epitaxial film forming chamber (hereinafter referred to as "apparatus") 1 internally contains an epitaxial film forming chamber (hereinafter referred to as "apparatus") 1 internally contains an epitaxial film forming chamber
- film forming chamber 2 This film forming chamber 2 is equipped with an upper dome 3, a lower dome 4, and a dome fitting 5.
- the upper dome 3 and the lower dome 4 are made from a transparent material such as quartz, etc., with a susceptor 10 and silicon wafer W being heated using a plurality of halogen lamps 6 arranged above and below the apparatus 1.
- the susceptor 10 is then rotated as a result of an outer part of the lower surface of the susceptor 10 engaging with a support arm 8 linked to a susceptor rotating shaft 7.
- a carbon base material, coated on the surface with a SiC film, is adopted as the susceptor 10.
- the susceptor 10 is disc-shaped as shown in FIG. 20, or is disc-shaped having a recess as shown in FIG. 21, and supports the entire rear surface of the silicon wafer W.
- This recess is comprised of a pocket 10a housing the silicon wafer W and is comprised of a substantially circular bottom wall and a sidewall surrounding this bottom wall.
- a total of three through-holes 10b are formed every 120 degrees around the outside of the susceptor 10. Elevating pins 9 for raising and lowering the silicon wafer W are inserted loosely at each through-hole 10b. Elevation of the elevating pins 9 is carried out by a lift arm 11.
- Agas supplyopening 12 andgas exhaust opening 13 are located facing each other at a position of the dome fitting 5 that faces the susceptor 10.
- Reactive gas that has been formed by diluting source gas such as SiHCl 3 , etc. with hydrogen gas (carrier gas) and mixed with a microscopic amount of dopant, is supplied from the gas supply opening 3 so as to flow parallel (in a horizontal direction) to the surface of the silicon wafer W.
- the provided reactive gas is exhausted to the outside of the apparatus 1 by gas exhaust outlet 13 after passing over the surface of the silicon wafer W to bring about epitaxial film growth.
- silicon wafers are coated with a protective film so that autodoping from the silicon wafer W is prevented.
- Silicon oxide films produced by CND techniques are typically used as the protective films for preventing autodoping and a polycrystaline silicon film formed on the rear surface of the wafer can contribute to gettering capabilities andmay also function as a protective film for reducing autodoping.
- Typically only the rear surface is coated with the silicon oxide film.
- the edges of the wafer are not coated, but any out diffusion of dopant from the wafer edge is minimal because of the small surface area. The use of a wafer having a protective film is therefore effective in suppressing autodoping.
- Anepitaxial wafer that has beenprocessedwithout anoxidebackseal has a rear surface that is depleted of dopant concentration. This depleted rear surface maybe beneficial for subsequent processing by the device manufacturer.
- an epitaxial growth process method has been proposed that employs a susceptor 10 formed with a large number of through-holes 10c over substantially the entire surface of the bottom wall of the pocket 10a of the susceptor 10, as shown, for example, in FIG. 23.
- a region from a central position of the bottom wall of this pocket to a radius of 1/2 is a region for measuring the temperature of the epitaxial growth process in the epitaxial growth apparatus .
- the aforementioned reactive gas is supplied to the film-forming chamber 2 in a manner parallel with respect to the surface of the silicon wafer W (FIG. 22) .
- Part of the reactive gas flowing into the film-forming chamber 2 therefore collides with the outer wall of the susceptor 10.
- the gas flow of reactive gas is disturbed in the vicinity of the upper edge part of the susceptor 10 and it is therefore difficult for the reactive gas to make sufficient contact with the outer edge surface of the silicon wafer W.
- this causes a phenomenon to occur where the epitaxial film of this portion becomes thin compared with the surface portion. This phenomenon occurs regardless of whether or not a protective film for preventing autodoping is present at the rear surface of the silicon wafer W.
- the through-holes 10c in the prior art are formed in a direction perpendicular to the bottom wall of the susceptor 10.
- radiant heat can pass through the through-holes and can be absorbed directly on the rear surface of the silicon wafer. This can cause non-uniform heating of the silicon wafer.
- an epitaxial growth susceptor (hereinafter sometimes referred to simply as "susceptor") with a pocket formed from a substantially circular bottom wall and a side wall encompassing the bottom wall, where a semiconductor wafer is to be mounted in the pocket.
- a plurality of through-holes with openings that are substantially circular or polygonal are provided at the bottom wall within an outer periphery region in a radial direction from the outer periphery of the bottom wall to the center, over a distance that is up to approximately 1/2 of the radius, with the through-holes being included within at least a portion of the region of the bottom wall on which the semiconductor wafer is mounted.
- the total opening surface area of the plurality of through-holes is 0.05 to 55% of the surface area of the bottom wall.
- Circular, elliptical or a similar shape may be given as substantially circular shapes. Triangular, quadrangular, pentagonal, or other angular shapes may be given as polygonal shapes .
- the type of wafer is by no means limited. For example, a silicon wafer or gallium arsenide wafer or SOI or selectively grown epitaxial wafers may be used. If the total opening surface area of the plurality of through-holes is smaller than 0.05% of the surface area of the bottom wall, dopant that diffuses outwards from the rear surface of the wafer is not effectively exhausted.
- the plurality of though-holes are provided within an outer periphery region in a radial direction from the outside of the bottom wall to the center over a distance that is up to 1/2 of the radius.
- the through-holes are included within at least the region of the bottom wall on which the semiconductor wafer is mounted on.
- the total surface area of the openings of the through-holes is taken to be 0.05 to 55% of the surface area of the bottom wall. This improves uniformity of film thickness of the epitaxial film.
- nanotopgraphically degraded regions of the epitaxial wafer surface that occur due to a temperature difference between the regions where a plurality of through-holes are formed in the bottom wall of the pocket and regions where the holes are not formed can be reduced.
- the slip caused by the forming of through-holes in the bottomwall of the pocket can also beprevented.
- the epitaxial growth susceptor there is further provided a support means at the bottom wall or sidewall for supporting the mounted semiconductor wafer through surface contact, line contact or point contact with only the outer periphery of the semiconductor wafer.
- carrier gas such as hydrogen gas
- a support means for supporting the wafer by making surface contact, line contact or point contact with the outer periphery of the wafer so that a slight gap is formed between the rear surface of the wafer and the upper surface of the susceptor.
- a SiC film is adhered to the surface of the susceptor and to inner wall surfaces of each of the through-holes . Exposed surfaces of the susceptor and inner surfaces of the through-holes are coated with a SiC film. Contamination from the susceptor base material, such as carbon contamination, etc., can therefore be reliably prevented.
- At least the portion of the susceptor that includes the through-holes of the susceptor is made of a solid SiC material.
- the reason for making the portion of the susceptor that includes the through-holes of a solid SiC material is because it is difficult to coat all of the inside surfaces of the through-holes uniformly and because peeling of the SiC film tends to occur at parts of the inside surfaces of the through-holes. Contamination causedbythe susceptorbase material canbe reliably prevented by forming the susceptor region where the through-holes are formed using a solid SiC material which is fabricated from solid SiC using a CVD technique, etc. It is also possible to form the entire susceptor from a solid SiC material.
- the through-holes of the susceptor are inclined with respect to the thickness direction of the bottom wall.
- each of the through-holes is formed in the bottom wall inclined in such a manner that a central axis of each through-hole is not orthogonal with respect to the bottom wall plane but rather has a prescribed angle.
- the angle of inclination of (the central axes of) the through-holes with respect to the bottomwall surface is, for example, 20 to 70 degrees .
- the direction of inclination of the through-holes is by no means limited. Inclination from the upper surface of the bottom wall to the lower surface towards the inside of the bottomwall or towards the outside is possible.
- the radiant heat occurring at the part of the bottom wall where the through-holes are formed can therefore be decreased compared with the case where the through-holes are not inclinedand the occurrence of uneven brightness at the rear surface of the semiconductor wafer can be suppressed.
- an expitaxial growth susceptor with a pocket formed from a substantially circular bottom wall and a sidewall encompassing the bottom wall, where a semiconductor wafer is to be mounted within the pocket.
- a plurality of through-holes with openings that are substantially circular or polygonal are provided at the bottom wall within a region or a distance of up to approximately 1/2 the radius from the outer periphery to the center in a radial direction, with the through-holes being included within at least the region of the bottom wall on which the semiconductor wafer is to be mounted.
- the opening surface area of each through-hole is taken to be 0.2 to 3.2mm 2 , and the density of the through-holes is taken to be 0.25 to 25 holes per cm 2 .
- the thickness uniformity of the epitaxial film is improved and the nanotopgraphically degraded regions of the epitaxial wafer surface that occur due to a temperature difference between the regions where a plurality of through-holes are formed in the bottom wall of the pocket and regions where the holes are not formed are reduced.
- the slip caused by the forming of through-holes in the bottom wall of the pocket can therefore be prevented.
- the epitaxial susceptor according to the sixth aspect of the invention is further provided with a support means at the bottom wall or sidewall for supporting the mounted semiconductor wafer through surface contact , line contact orpoint contact withonlythe outerperiphery of the semiconductor wafer.
- a SiC film is adhered to the surface of the susceptor of the sixth aspect of the invention and to inner wall surfaces of each of the through-holes.
- At least the portion of the susceptor of the sixth aspect of the invention that includes the through-holes of the susceptor is made of a solid SiC material .
- the through-holes of the susceptor of the sixth aspect of the invention are inclined with respect to the thickness direction of the bottom wall.
- an epitaxial growth method for growing an epitaxial film on a surface of a semiconductor wafer by mounting the semiconductor wafer within the susceptor pocket and supplying source gas and carrier gas to an upper surface side of the susceptor and supplying carrier gas to a lower surface side of the susceptor.
- the pocket is formed from a substantially round bottom wall and a sidewall encompassing the bottom wall, and a plurality of through-holes with openings that are substantially circular or polygonal are provided at the bottom wall within a region or a distance of up to approximately 1/2 the radius from the outer periphery to the center, with through-holes being included within at least the region of the bottom wall on which the semiconductor wafer is mounted.
- the total opening surface area of the plurality of through-holes is 0.05 to 55% of the surface area of the bottom wall .
- Hydrogen gas or an inert gas may be adopted as the carrier gas.
- part of the source gas flowing on the upper surface side of the susceptor flows from a gap between the outer periphery of the semiconductor wafer and the sidewall of the susceptor down to the lower surface side of the susceptor via the through-holes as a result of negative pressure created by the carrier gas flowing on the lower surface side of the susceptor.
- a sufficient amount of source gas can therefore be supplied to the surface of the outer periphery of the wafer.
- the slip caused by the forming of through-holes in the bottom wall of the pocket can therefore be prevented.
- dopant is diffused outwards from the rear surface of a wafer during an epitaxial growth process when a semiconductor wafer with both front and rear surfaces constituted by a semiconductor single crystal surface is subj ected to the epitaxial growth process.
- dopant is discharged at the lower surface side of the susceptor due to the action of this negative pressure and it is difficult for this dopant to be incorporated into the epitaxial film.
- the influence of this autodoping from the rear surface of the wafer can be substantially eliminated and the uniformity of dopant concentration within the epitaxial film surface can be improved.
- This epitaxial growth process may also be applied to semiconductor wafers with oxide films or polycrystalline films formedon the rear surface thereofwhere the influence of autodoping is slight. Reduction in film thickness at the outer periphery of the epitaxial film can also be suppressed in this case.
- an epitaxial growth method where the epitaxial growth susceptor in the eleventh aspect of the invention is provided with support means at the bottom wall or sidewall for supporting the mounted semiconductor wafer through surface contact, line contact or point contact with only the outer periphery of the semiconductor wafer.
- a SiC film is adhered to the surfaces of the susceptor of the eleventh aspect of the invention and to inner wall surfaces of each of the through-holes .
- an epitaxial growth method is provided where at least the portion of the susceptor of the eleventh aspect of the invention that includes the through-holes of the susceptor is made of a solid SiC material.
- an epitaxial growth method is provided where the carrier gas supplied to the lower surface side of the susceptor of the eleventh aspect of the invention is hydrogen containing gas supplied at 3 to 100 liters per minute .
- the amount of carrier gas flowing at the lower surface side of the susceptor is less than 3 liters per minute, there is an insufficient amount of negative pressure generated and the dopant does not effectively flow through the susceptor through-holes. In this case the autodoping is excessive.
- a flow of 100 liters per minute flow is exceeded, the effectiveness of exhausting the dopant is increased, but the carriergas including the dopant is not discharged from the gas exhausting opening in an appropriate manner. Part of the carrier gas flows into the source gas andthe distributionof resistivitywithin the epitaxial film deteriorates.
- an epitaxial growth method is provided where the through-holes of the epitaxial growth susceptor of the eleventh aspect of the invention are inclined with respect to the thickness direction of the bottom wall.
- an epitaxial growth method for growing an epitaxial film on a surface of a semiconductor wafer by mounting the semiconductor wafer within the susceptor pocket and supplying source gas and carrier gas to an upper surface side of the susceptor and supplying carrier gas to a lower surface side of the susceptor.
- the pocket is formed from a substantially round bottom wall and a sidewall encompassing the bottom wall, and a plurality of through-holes with openings that are substantially circular or. polygonal are provided at the bottom wall within a region a distance of up to approximately 1/2 the radius fromtheouterperipherytothe center, with the through-holes being included within at least the region of the bottom wall on which the semiconductor wafer is mounted.
- the opening surface area of each through-hole is taken to be 0.2 to 3.2mm 2 , and the density of the through-holes is taken to be 0.25 to 25 per cm 2 .
- epitaxial growth is carried out while flowing source gas and carrier gas on the upper surface side of the susceptor and flowing carrier gas on the lower surface side.
- a negative pressure force acts at the outer peripheral part of the susceptor due to carrier gas flowing on the lower surface side of the susceptor causing part of the source gas flowing on the upper surface side of the susceptor to flow to the lower surface side of the susceptor via the through-holes.
- a sufficient amount of source gas can also be supplied to the surface of the outer periphery of the wafer, and the thickness of the epitaxial filmcanbe made uniform.
- This uniformityof the epitaxial film can therefore be achieved regardless of whether or not a protective film for preventing autodoping is present at the rear surface of the silicon wafer.
- Nanotopographically degraded regions of the epitaxial wafer surface that occur due to a temperature difference between the regions where a plurality of through-holes are formed in the bottom wall of the pocket and regions where the holes are not formed can be reduced. The slip caused by the forming of through-holes in the bottom wall of the pocket can be prevented.
- dopant is diffused outwards from the rear surface of the wafer during the epitaxial growth process in the case of a semiconductorwaferwithboth front and rear surfaces constituted by a semiconductor single crystal surface.
- dopant diffused outwards is exhausted to the lower surface side of the susceptor due to the action of the negative pressure. It is therefore difficult for the dopant to be taken into the epitaxial film.
- the influence of this autodoping from the rear surface of the wafer can be eliminated and the uniformity of dopant concentration within the epitaxial film surface can be improved.
- an epitaxial growth method where the epitaxial growth susceptor of the seventeenth aspect of the invention is provided with a support unit at the bottom wall or sidewall for supporting the mounted semiconductor wafer through surface contact, line contact or point contact with only the outer periphery of the semiconductor wafer.
- an epitaxial growth method is provided where a SiC film is adhered to the surface of the susceptor of the seventeenth aspect of the invention and to innerwall surfaces of each of the through-holes in the epitaxial growth method.
- an epitaxial growth method is provided where at least the portion of the susceptor of the seventeenth aspect of the invention that includes the through-holes of the susceptor is made of a solid SiC material.
- an epitaxial growth method is provided where the carrier gas supplied to the lower surface side of the susceptor of the seventeenth aspect of the invention is hydrogen containing gas supplied at 3 to 100 liters per minute.
- an epitaxial growth method is provided where the through-holes of the susceptor of the seventeenthaspect of the inventionare inclinedwithrespect to the thickness direction of the bottom wall.
- FIG. 1 is a cross-sectional view schematically showing an epitaxial growth apparatus on which is mounted an epitaxial growth susceptor of a first embodiment of this invention.
- FIG. 2 is an enlarged cross-sectional view schematically showing the essential parts of a usage state of a susceptor for epitaxial growth of a first embodiment of this invention.
- FIG. 3 is a plan view showing essential parts of a susceptor for epitaxial growth of a first embodiment of this invention.
- FIG.4 is an enlarged cross-sectional view showing essential parts of a susceptor for epitaxial growth of a first embodiment of this invention.
- FIG. 5 is a plan view schematically showing a susceptor for epitaxial growth of a further embodiment of this invention.
- FIG. 6 is a cross-sectional view schematically showing the essential parts of a susceptor for epitaxial growth of a further embodiment of this invention.
- FIG. 7 is a cross-sectional view schematically showing the essential parts of a susceptor for epitaxial growth of a further embodiment of this invention.
- FIG. 8 is a cross-sectional view schematically showing a susceptor for epitaxial growth of another embodiment of this invention.
- FIG. 9 is a plan view schematically showing a susceptor for epitaxial growth of a further embodiment of this invention.
- FIG. 10 is a cross-sectional view schematically showing essential parts of a susceptor for epitaxial growth of a still further embodiment of this invention.
- FIG. 11 is a plan view schematically showing a susceptor for epitaxial growth of a further embodiment of this invention.
- FIG. 12 is a graph showing distribution of dopant concentration in a radial directionof epitaxial films of epitaxial wafers obtained in a test example and a comparative example.
- FIG. 13 is a graph showing distribution of resistivity in a radial directionof epitaxial films of epitaxial wafers obtained in a test example and a comparative example.
- FIG. 14 is a graph showing changes in film thickness of epitaxial films of epitaxial wafers obtained in a test example and a comparative example.
- FIG. 15 is a graph showing peak to valley (P-V) nanotopology occurring in the outer parts of epitaxial wafers obtained in a test example and a comparative example.
- FIG. 16 is a graph showing the relationship between the surface area of the openings of through-holes and P-V nanotopography values for epitaxial wafers obtained in a test example and a comparative example.
- FIG. 17 is a graph showing the relationship between the region from the edge of a wafer where through-holes are provided and the extent of a drop or decrease in thickness of an epitaxial film at the outer edge of a wafer for epitaxial wafers obtained in a test example and a comparative example.
- FIG. 18 is a graph showing the relationship between the surface area of the openings of the through-holes and the extent of slip for epitaxial wafers obtained in a test example and a comparative example.
- FIG. 19 is a cross-sectional view schematically showing an epitaxial growth apparatus of the prior art .
- FIG. 20 is a plan view schematically showing a susceptor for epitaxial growth of the prior art.
- FIG. 21 is a further cross-sectional view schematically showing a susceptor for epitaxial growth of the prior art .
- FIG. 22 is a further cross-sectional view schematically showing a usage state of a susceptor for epitaxial growth of the prior art.
- FIG .23 is a further plan view schematically showing a usage state of a susceptor for epitaxial growth of the prior art.
- FIG. 1 is a cross-sectional view schematically showing an epitaxial growth apparatus in which is mounted an epitaxial growth susceptor of a first embodiment of this invention.
- FIG. 2 is an enlarged cross-sectional view schematically showing essential parts of a usage state of a susceptor for epitaxial growth of the first embodiment of this invention.
- FIG. 3 is a plan view showing essential parts of a susceptor for epitaxial growth of the first embodiment of this invention.
- FIG. 4 is an enlarged cross-sectional view showing essential parts of a susceptor for epitaxial growth of the first embodiment of this invention.
- FIG. 5 is a plan view schematically showing a susceptor for epitaxial growth of a further embodiment of this invention.
- FIG. 6 is a cross-sectional view schematically showing essential parts of a susceptor for epitaxial growth of the further embodiment of this invention.
- FIG.7 is a cross-sectional view schematically showing the essential parts of a susceptor for epitaxial growth of the further embodiment of this invention. As shown in FIG.1 to FIG.4, the epitaxial growth apparatus
- Appatus 1 internally contains an epitaxial film forming chamber 2. This film forming chamber
- the upper dome 3 and the lower dome 4 are made from a transparent material such as quartz, etc., with a plurality of halogen lamps 6 for heating, a susceptor 10 and silicon wafer
- W used is, for example, a P-type silicon single crystal wafer
- a gas supply opening 12 and gas exhaust opening 13 are located facing each other at a position of the dome fitting 5 that faces the susceptor 10.
- Reactive gas that has been formed by diluting a source gas such as SiHCl 3 etc. with hydrogen gas (carrier gas) and mixed with a microscopic amount of dopant, is supplied from the gas supply opening 12 so as to flow parallel (in a horizontal direction) to the surface of the silicon wafer W.
- the provided reactive gas is exhausted to the outside of the apparatus 1 by a gas exhaust outlet 13 after passing over the surface of the silicon wafer W to bring about epitaxial film growth.
- a gas supply opening 14 for supplying carrier gas such as hydrogen gas, etc. is formed at the side of the lower surface of the susceptor 10 below the gas supplyopening 12.
- agas exhaust opening 15 forexhausting hydrogen gas supplied from the gas supply opening 14 to the outside is also provided at the dome fitting 5 in the vicinity below the gas exhaust outlet 13. It is also possible to not provide the gas exhaust opening 15 and instead have the gas exhaust outlet
- FIG. 2 to FIG. 4 of a susceptor 10 of this embodiment A description is now given with reference to FIG. 2 to FIG. 4 of a susceptor 10 of this embodiment.
- This invention is, however, by no means limited to the susceptor 10.
- the susceptor 10 is rotated as a result of an outer part of the lower surface of the susceptor 10 engaging with a support arm 8 linking with a susceptor rotating shaft 7.
- This susceptor 10 has a pocket 10a formed from a circular bottom wall of a diameter of up to 215mm, which is slightly larger than the diameter of the silicon wafer W, and a cylindrical sidewall surrounding the bottom wall.
- the bottom wall and sidewall are made from carbon materials with a SiC film adhered to the surface.
- a silicon wafer is then housed in and mounted on this pocket 10a.
- the size of the susceptor can be changed in an appropriate manner according to the diameter of the silicon wafer W.
- the susceptor 10 it is preferable for the susceptor 10 to be of a size where there is a gap in the order of 1 to 10mm between the outer edge of the pocket 10a and the outer edge of the silicon wafer W.
- the depth of the pocket 10a i.e. the height from the upper surface of the bottom wall of the susceptor 10 to the upper edge surface of the sidewall, is substantially the same as the thickness of the silicon wafer, at 800 ⁇ m.
- a total of three through-holes 10b for pins that support and raise the silicon wafer W up and down are arranged at 120 degree intervals in a circumferential direction at the outer periphery of the bottom wall.
- Elevating pins 9 for raising and lowering the silicon wafer W are inserted loosely at each of the three through-holes 10b.
- Each elevating pin 9 is provided so as to be raised and lowered freely with respect to the support arm 8.
- the elevating pins 9 are raised and lowered by a plurality of lift arms 11 provided separately from the support arm 8 at the susceptor rotating shaft 7 in such a manner as to enable raising and lowering.
- a plurality of through-holes 10c are provided for preventing the reduction of the epitaxial film grown at the outer periphery of the surface of the wafer and for discharging dopant from the rear surface of the silicon wafer W that occurs at the outer periphery of the bottom wall.
- through-holes 10c are formed in a range 20mm from the outer edge of the bottom wall of the pocket 10a towards the inside in a radial direction of the wafer.
- the through-holes 10b therefore play little part as through-holes for discharging dopant.
- the through-holes 10b for use in raising and lowering the wafer are not necessary for epitaxial growth apparatus where the wafer is transported using a Bernoulli chuck method, etc.
- a combined function of through-holes 10b as through-holes for discharging dopant can also be achieved by providing recesses within the through-holes 10b used for raising and lowering the wafer so that gas flows through (FIG. 5) .
- FIG. 6 there are slots supporting both ends (in the direction of the Y axis) of the head part of an elevating pin 9 in a contacting manner
- FIG. 7 there are slots supporting both ends (in the direction of the X axis) of the head part of the elevating pin 9 in a non-contacting manner.
- the through-holes 10c are formed in the bottom wall (having a diameter of 216 mm) so as to appear as circular holes as viewed from above.
- Each hole has a diameter of 1mm, and an opening surface area of 0.79mm 2 , and the density of the holes is 7.3/cm 2 .
- the total opening surface area of the through-holes 10c is 1.8% of the surface area of the bottomwall .
- the through-holes 10c are formed at least within the region of the susceptor 10 above which the susceptor 10 is positioned.
- At least one row of holes and, preferably, at least two rows of holes having a size and density as described above are provided in this region.
- through-holes 10c are formed in the peripheral region (only outer side region of the wafer) of a susceptor 10 of a size exceeding the diameter of the wafer, the effects of discharging the dopant gas discharged from the rear surface of the wafer are reduced and the influence of the autodoping cannot be eliminated.
- a support means lOd supporting the outer peripheral part of the silicon wafer W in a line contact state is provided at the bottom wall of the pocket 10a in a tapered shape inclined in a direction from the outside towards the inside (inclined surface) .
- FIG. 8 is a cross-sectional view schematically showing a susceptor for epitaxial growth of another embodiment of this invention.
- FIG. 9 is a plane view schematically showing the susceptor for epitaxial growth of FIG. 8.
- FIG. 11 is a plane view schematically showing the susceptor for epitaxial growth of another embodiment of this invention, in which through-holes are formed at the bottom wall of the pocket 10a and are connected by a shallow channel lOf .
- the support unit lOd may also be configured so as to support the silicon wafer W. by making contact with the surface at just the outer peripheral part of the silicon wafer. Uneven portions may also be provided on the surface of the support unit lOd, with support thenbeing achievedbypoint-contact between the surface and the outer peripheral part of the silicon wafer W.
- the susceptor 10 of FIGS .8 and 9 can be formed using different materials for the bottom wall and the sidewall. Namely, the whole of the bottom wall of the pocket 10a where the through-holes 10c are formed using a solid SiC material, and the sidewall of the pocket 10a is a carbon base material coated with a SiC (silicon carbide) film. Carbon contaminants coming from the base material of the susceptor 10 can be effectively eliminated using this coating.
- the though-holes are formed over the whole of an outer peripheral region in a radial direction from the outside to the center of the bottomwall of the pocket 10 to a distance that is approximately 1/2 of the radius.
- FIG. 10 is an example where through-holes 10c formed in the outer peripheral region of the susceptor 10 are inclined by 45 degrees with respect to the thickness direction of the bottom wall.
- the radiant heat can therefore be suppressed in the region where the through-holes 10c are formed in the bottom wall by inclining the through-holes 10c within a range of 20 degrees to 70 degrees with respect to the thickness direction of the bottom wall and the occurrence of uneven brightness at a rear surface of the silicon wafer W can be suppressed.
- FIG. 11 is an embodiment of a susceptor of the present invention in which a row of through-holes is provided in the outer peripheral region of the susceptor within the region of the susceptor on which the wafer is mounted, with the holes being connected by a shallow channel, or trench.
- the width of the trench is typically slightly greater than the diameter of the through-holes up to about 1.5 times the diameter.
- the trench has a depth such that the cross-sectional area of the trench is from about 50% to 100% of the opening surface area of a through-hole and, preferably, is close to that of a through-hole. From a manufacturing standpoint, the bottom of the trench is typically flat .
- a shallow trench has a smaller impact on nanotopology degradation than a through-hole because there is still sufficient susceptor mass to maintain a uniform thermal distribution which is a cause of nanotopology degradation. It is noted that although only one row of holes is shown in FIG. 11, more than one row can be provided.
- a mixed reactive gas of a silicon source gas of SiHCl 3 and a boron source gas of B 2 H 6 diluted in hydrogen gas is supplied to the apparatus 1 at a rate of 50 liters per minute so that a P-type epitaxial film of a thickness of approximately 6 ⁇ m and resistivity of 10 ⁇ cm is formed on the wafer surface at an epitaxial growth temperature of 1070 °C.
- Reactive gas supplied from the reactive gas supply opening 12 passes through the film forming chamber 2 where the susceptor 10 and silicon wafer W are heated by a plurality of halogen lamps 6 arranged above and below the apparatus 1 and is exhausted from the apparatus 1 from the gas exhaust outlet 13 during the formation of the epitaxial filmon the surface of the siliconwaferW.
- Hydrogen gas is supplied from the gas supply opening 14 to within the film forming chamber 2 at a flow rate of 15 liters per minute so as to pass through the lower surface side of the susceptor 10 and after this, the hydrogen gas is exhausted from the gas exhaust opening 15.
- a susceptor 10 (as shown in FIG.
- a silicon oxide film for preventing autodoping is not formed at the rear surface of the silicon wafer W and therefore both front and rear surfaces of the wafer can be configured from silicon single crystal surfaces.
- Dopant boron
- dopant diffused outwards is exhausted to the lower side of the susceptor 10 due to the action of the aforementioned negative pressure force. It is therefore difficult for the dopant to be taken into the epitaxial film.
- the dopant concentration of the epitaxial film is lower than the dopant concentration of the silicon wafer W. Therefore, even in cases where the influence of autodoping from the rear surface of the wafer is substantial, this influence is eliminated and the uniformity of dopant concentration within the epitaxial film surface is improved.
- the results of comparing the test example of this invention based on the above-described embodiment of this invention and a comparative example of the prior art are described below.
- the single wafer epitaxial growth apparatus shown in FIG. 1 is used and hydrogen gas is supplied at a rate of 15 liters per minute from the gas supply opening 14 in order to prevent silicon from becoming deposited on or in furnace members below the film-forming chamber 2 such as the rotating shaft 7 of the susceptor 10.
- the susceptor 10 used is one as shown in FIG. 20.
- Dopant concentration distribution in a radial direction within the epitaxial film is measured using a surface charge profiler for the epitaxial silicon wafers obtained in the test example of this invention and in the comparative example, respectively. The results are shown in the graph in FIG.12. Results obtained for resistivitydistribution in a radial directionwithin an epitaxial film based on these measurement results are shown in FIG. 13.
- FIG. 12 is a graph showing distribution of dopant concentration in a radial direction of epitaxial films obtained in the test example and the comparative example
- FIG. 13 is a graph showing distribution of resistivity in a radial direction of epitaxial films obtained in the test example and the comparative example .
- dopant is taken in in such a manner that dopant concentration within the epitaxial film is uniform in a radial direction and a p-type epitaxial film with a targeted resistivity of 10 ⁇ cm is obtained uniformly within the surface.
- dopant concentration is high at the outer periphery in the comparative example. It can also be understood that resistivity distribution falls accordingly by a substantial amount at the outer periphery.
- FIG. 14 is a graph showing changes in film thickness of epitaxial films of epitaxial wafers obtained in the test example and the comparative example.
- the susceptor of this invention is capable of dramatically reducing the decrease in film thickness of the epitaxial film that otherwise occurs at the outer periphery of the wafer because using the susceptor of the present invention a sufficient amount of reactive gas is supplied to the edge regions .
- FIG. 15 a description is given based on FIG. 15 of how nanotopographical degradation of the wafer surface is improved byformingapluralityof through-holes inonlythe outerperipheral region of the susceptor.
- FIG. 15 is a graph showing nanotopography occurring in the outer parts of epitaxial wafers obtained in the test example and the comparative example. The nanotopology was measured by laser reflection angle from the wafer surface (as described in SEMI standard m43) .
- through-holes are dispersed over the whole area of the bottom wall of the pocket, nanotopographical deterioration occurring due to temperature differences between regions where through-holes are formed and regions where through-holes are not formed occurs over the whole surface of the epitaxial wafer.
- through-holes are only formed in a region starting from the outside of the bottomwall to the center in a radial direction for a distance of up to 1/2 the radius.
- the portion of regions where there is no nanotopographical deterioration within the epitaxial wafer surface is therefore enlarged and a high-quality epitaxial wafer where the number of nanotopographically degraded regions has been reduced is obtained.
- a region from the center of the bottom wall of the susceptor to a radius of 1/2 is a region for measuring process temperature of the epitaxial growth apparatus.
- the through-holes are formed outside this region in this invention and the occurrence of slip to the epitaxial film can therefore be suppressed.
- FIG. 16 the relationship between opening surface area of through-holes and P-V values for through-hole forming parts for the susceptor of the present invention and a prior art susceptor is shown in FIG. 16.
- the opening surface area of the through-holes it is preferable for the opening surface area of the through-holes to be as small as possible so as to minimize the risk of nanotopographical degradation.
- FIG. 17 is a graph showing the relationship between through-hole forming regions and an extent of a drop in film thickness of an epitaxial film at outer parts of a wafer. It canbe understood fromthe graph of FIG.17 that the dropping of film thickness can be prevented when through-holes are provided in the vicinity from the outer peripheral edge of the pocket of the susceptor up to at least 50mm inwards (i.e., up to approximately half the length of the radius from the outside of the bottom wall of the susceptor to the center) .
- the opening surface area of the through-holes considering cylindrical through-holes because of the limits of mechanical machining precision when forming the through-holes, it is considered not to be possible to form through-holes of less than 0.2mm 2 . Problems with nanotopographical degradation and the occurrence of slip also place constraints on through-holes of 3.2mm 2 or greater. An opening surface area for the through-holes of 3.2mm 2 or less is therefore necessary to give nanotopographical degradation of lOnm or less and to prevent the occurrence of slip.
- the rate of supplying reactive gas to the outer periphery of the wafer is also substantially changed due to the relationship between the through-hole opening surface area and the through-hole density. It is therefore preferable to arrange the through-holes as densely as possible in order that the influence of the flow of reactive gas to the lower side of the susceptor shown in FIG. 1 is uniformly high with respect to the circumferential direction of the wafer and in order to dramatically suppress the influence of autodoping and suppress reduction in epitaxial film thickness at the outer periphery of the wafer.
- the optimum range for the density of the through-holes is therefore 0.25 to 25 per cm 2 in order to take into consideration problems with the strength of the susceptor and through-hole machining precision.
- the plurality of through-holes is provided within an outer periphery region in a radial direction from the outside of the bottom wall to the center over a distance that is up to about 1/2 of the radius, with the through-holes being included within at least the region of the bottom wall on which the semiconductor wafer is mounted.
- the total surface area of the openings of the through-holes is 0.05 to 55% of the surface area of the bottom wall, the opening area of each through-hole is 0.2 to 3.2mm 2 and the opening density of through-holes is 0.25 to 25 per cm 2 .
- uniformity of thickness of the epitaxial film can be improved and nanotopographically degraded regions of the epitaxial wafer surface that occur due to a temperature difference between the regions where a plurality of through-holes are formed in the bottom wall of the pocket and regions where the holes are not formed can be reduced. Additionally, slip to the epitaxial film caused by the forming of through-holes in the bottom wall of the pocket can be prevented and the influence of autodoping from the rear surface of the wafer can be eliminated. Therefore, uniformity of dopant concentration within the epitaxial film surface can be improved.
- a support unit for supporting the mounted semiconductor wafer through surface contact , 1ine contact orpoint contact with only the outer periphery of the semiconductor wafer is provided at the sidewall of the susceptor.
- Through-holes are provided in the susceptor within a region from this contact toward the center. This provides a substantial seal at the wafer edge anddopant, that is outgassing fromthewafer rearsurface, diffuses out the through-holes. As a result, the influence of autodoping from the rear surface can be minimized.
- SiC films are adhered to the surface of the susceptor and the inner wall surfaces of each through-hole or at least the inner walls of each through-hole of the susceptor are made from an SiC material .
- an epitaxial wafer can be made that is not influenced by autodoping even without forming a protective film for preventing autodoping at the rear surface of the wafer and, even in cases where a semiconductor wafer with dopant added to a high concentration is subjected to an epitaxial growth process, the cost of producing the epitaxial wafer can therefore be reduced.
- the epitaxial growth method of this invention dopant is discharged to the outside from the rear surface of the wafer during an epitaxial reaction and it is therefore possible to provide an epitaxial wafer with extremely low dopant concentration at the rear surface of the wafer. This depleted rear surface may be beneficial for subsequent processing by device manufacturers.
- the epitaxial growth susceptor of this invention is used, problems with autodoping and problems with impurity contamination traceable to the susceptor structure are substantially resolved.
- the through-holes may be inclined with respect to the thickness direction of the bottom wall. Radiant heat occurring at the part of the bottom wall where the through-holes are formed can therefore be suppressed, as can the occurrence of uneven brightness at the rear surface of the semiconductor wafer.
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Abstract
Description
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Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
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EP02795973A EP1456871B1 (en) | 2001-12-21 | 2002-12-23 | Susceptor for epitaxial growth |
DE02795973T DE02795973T1 (en) | 2001-12-21 | 2002-12-23 | SUSCEPTOR FOR EPITAXIAL GROWTH AND EPITAXIAL GROWTH PROCEDURE |
KR1020047004269A KR100779970B1 (en) | 2001-12-21 | 2002-12-23 | Susceptor for epitaxial growth and epitaxial growth method |
JP2003560968A JP4285240B2 (en) | 2001-12-21 | 2002-12-23 | Epitaxial growth susceptor and epitaxial growth method |
US10/483,809 US20050000449A1 (en) | 2001-12-21 | 2002-12-23 | Susceptor for epitaxial growth and epitaxial growth method |
DE60227557T DE60227557D1 (en) | 2001-12-21 | 2002-12-23 | SUSCEPTOR FOR EPITAXIAL GROWTH |
US12/461,820 US8926754B2 (en) | 2001-12-21 | 2009-08-25 | Epitaxial growth susceptor |
US14/582,675 US9518339B2 (en) | 2001-12-21 | 2014-12-24 | Epitaxial growth method |
US14/582,704 US9127374B2 (en) | 2001-12-21 | 2014-12-24 | Epitaxial growth method |
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JP2001389778A JP2003197532A (en) | 2001-12-21 | 2001-12-21 | Epitaxial growth method and epitaxial growth suscepter |
JP2001-389778 | 2001-12-21 |
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US10483809 A-371-Of-International | 2002-12-23 | ||
US12/461,820 Division US8926754B2 (en) | 2001-12-21 | 2009-08-25 | Epitaxial growth susceptor |
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JP (3) | JP2003197532A (en) |
KR (1) | KR100779970B1 (en) |
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EP1569264A1 (en) * | 2002-12-06 | 2005-08-31 | Shin-Etsu Handotai Co., Ltd | Method for producing silicon epitaxial wafer |
WO2005111266A1 (en) | 2004-05-18 | 2005-11-24 | Sumco Corporation | Susceptor for vapor deposition apparatus |
JP2006100345A (en) * | 2004-09-28 | 2006-04-13 | Komatsu Electronic Metals Co Ltd | Susceptor, and device and method for manufacturing epitaxial wafer |
EP1654752A2 (en) * | 2003-08-01 | 2006-05-10 | Sgl Carbon Ag | Holder for supporting wafers during semiconductor manufacture |
EP1670044A1 (en) * | 2003-10-01 | 2006-06-14 | Shin-Etsu Handotai Co., Ltd | Production method for silicon epitaxial wafer, and silicon epitaxial wafer |
JP2007522681A (en) * | 2004-02-13 | 2007-08-09 | エーエスエム アメリカ インコーポレイテッド | Substrate support system for reducing autodoping and backside deposition |
US7462246B2 (en) | 2005-04-15 | 2008-12-09 | Memc Electronic Materials, Inc. | Modified susceptor for barrel reactor |
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Also Published As
Publication number | Publication date |
---|---|
DE02795973T1 (en) | 2005-03-31 |
JP4285240B2 (en) | 2009-06-24 |
EP1840243A3 (en) | 2008-02-13 |
KR100779970B1 (en) | 2007-11-27 |
EP1840243B1 (en) | 2011-10-12 |
JP2008277795A (en) | 2008-11-13 |
DE60227557D1 (en) | 2008-08-21 |
KR20040066093A (en) | 2004-07-23 |
EP1456871A4 (en) | 2005-12-28 |
CN1526158A (en) | 2004-09-01 |
CN100419958C (en) | 2008-09-17 |
EP1456871B1 (en) | 2008-07-09 |
EP1840243A2 (en) | 2007-10-03 |
EP1456871A1 (en) | 2004-09-15 |
JP4798163B2 (en) | 2011-10-19 |
JP2003197532A (en) | 2003-07-11 |
JP2005515630A (en) | 2005-05-26 |
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