WO2003027351A1 - Method and apparatus for sputter deposition of epilayers with high deposition rate - Google Patents

Method and apparatus for sputter deposition of epilayers with high deposition rate Download PDF

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Publication number
WO2003027351A1
WO2003027351A1 PCT/US2002/030866 US0230866W WO03027351A1 WO 2003027351 A1 WO2003027351 A1 WO 2003027351A1 US 0230866 W US0230866 W US 0230866W WO 03027351 A1 WO03027351 A1 WO 03027351A1
Authority
WO
WIPO (PCT)
Prior art keywords
target
magnetron
sputtering
film
shaped
Prior art date
Application number
PCT/US2002/030866
Other languages
French (fr)
Inventor
Roman Chistyakov
Original Assignee
E.I. Du Pont De Nemours And Company
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by E.I. Du Pont De Nemours And Company filed Critical E.I. Du Pont De Nemours And Company
Priority to JP2003530911A priority Critical patent/JP2005504171A/en
Priority to EP02799663A priority patent/EP1438443A1/en
Priority to KR10-2004-7004399A priority patent/KR20040044995A/en
Publication of WO2003027351A1 publication Critical patent/WO2003027351A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth

Definitions

  • This invention relates to the sputter deposition of epilayers using a plurality of magnetrons having different shapes.
  • Radio frequency ( "RF” ) magnetron sputtering techniques are widely used for the sputtering of thin films.
  • RF radio frequency
  • AC alternating current
  • One embodiment of this invention is an apparatus for film deposition having first and second magnetron targets within a sputtering chamber, wherein the second target is shaped as a ring, or a method for film deposition employing such apparatus.
  • a further embodiment of this invention is an apparatus for film deposition having first and second magnetron targets within a sputtering chamber, wherein the second target has an aperture that provides exterior and interior surfaces from which target material may be sputtered, or a method for film deposition employing such apparatus.
  • Another embodiment of this invention is, in a method of depositing a film by sputtering from a plurality of magnetron targets in a sputtering chamber, the step of periodically shifting the negative potential to a magnetron target that is shaped as a ring.
  • Yet another embodiment of this invention is, in a method of depositing a film by sputtering from a plurality of magnetron targets in a sputtering chamber, the step of periodically shifting the negative potential to a magnetron target that has an aperture that provides exterior and interior surfaces from which target material may be sputtered.
  • a method and apparatus for the epitaxial sputter deposition of a film on a substrate, particularly thick epilayers, at a high deposition rate. It is preferred to deposit the epitaxial films by using an AC magnetron sputtering technique .
  • a sputter epitaxy chamber for sputtering target materials contains a plurality of magnetron sputtering targets as sources of sputter material .
  • the targets may have different shapes, such as a planar shape and a ring shape.
  • the preferred nature of ring-shaped magnetron is such that it possesses an aperture that provides exterior and interior surfaces from which target material may be sputtered.
  • the ring-shaped magnetron need not be a perfect circle. It may formed in any shape that is suitable for the sputtering chamber, such as an essentially perfect circle, imperfectly circular, eliptical or polygonal, so long as the aperture is present. There is no limitation on the variety of dimensional sizes the ring-shaped magnetron may take along all three axes provided that it functions as intended for use as a magnetron.
  • An AC power supply is connected to first and second magnetron targets in a sputtering chamber, one of the magnetron targets being the ring-shaped magnetron.
  • the ring-shaped magnetron may be disposed between another magnetron target, such as a planar, rectangular magnetron possessing no aperture, and the substrate.
  • the ring-shaped magnetron may be constructed from the same material as another target or from just one or only some of the materials from which another target may be prepared.
  • first and second targets one of which is the ring-shaped magnetron, act periodically as the cathode and the anode . Sputtering from the magnetron target and ring-target together forms a film on the substrate.
  • a sputter epitaxy chamber for sputtering nonconductive materials includes two magnetron sputtering sources, at least one shaped as a ring and a substrate.
  • two magnetron sputtering sources instead of having two planar, rectangular magnetron sputtering sources and connecting an AC power supply between them, we propose in this invention to have a plurality of magnetron sputtering sources, one of which is shaped as a ring.
  • This magnetron is constructed from the same material as the other, or from one of the elements that make up the other target if it is a compound of multiple elements.
  • both targets act periodically as a cathode and an anode .
  • the use of AC power causes the negative potential to periodically shift from one magnetron to another.
  • a sputter epitaxy chamber including a first magnetron sputtering source 2, a ring-shaped magnetron sputtering source 4, and a substrate 6.
  • An AC power supply 8 is connected to the two magnetrons.
  • the ring-shaped magnetron is disposed between the first target and the substrate.
  • the ring-shaped magnetron is constructed from the same material as the first magnetron, or from just one of or some of the elements that make up the first target if the first target is a compound of multiple elements.
  • the first target and the ring-shaped target act periodically as the cathode and the anode .
  • the presence of the ring-shaped target helps to reduce contamination of the sputtered epitaxial film when the first magnetron target has positive voltage. Sputtering from both magnetron targets forms a film on the substrate.
  • the ring-shaped magnetron target may have a cooling arrangement, such as a water jacket, since the deposition of thick films requires longer periods of sputtering.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

This invention relates to the sputter deposition of epilayers using a plurality of magnetrons (2, 4) having different shapes, such as a planar shape (2) and a ring shape (4).

Description

Method and Apparatus for Sputter Deposition of Epilayers with High Deposition Rate
This application claims the benefit of U.S. Provisional Application No. 60/325,331, filed September 27, 2001, which is incorporated in its entirety as a part hereof.
Field of the Invention
This invention relates to the sputter deposition of epilayers using a plurality of magnetrons having different shapes.
Background of the Invention Radio frequency ( "RF" ) magnetron sputtering techniques are widely used for the sputtering of thin films. In the case of sputtering thick films (i.e., films that are over one micrometer in thickness) , however, alternating current ("AC") magnetron sputtering is advantageous since the deposition rate is higher.
In US 5,814,195 and 6,365,010, methods of sputtering are described using an AC power supply. In each instance, a plurality of magnetrons is used, such as cylindrical-shaped magnetrons, but the sputtering is only from the surface of the magnetrons .
It has now been found to be advantageous, in a sputtering process in which a plurality of magnetrons is employed, to utilize at least one magnetron that is shaped as a ring. The film deposited by such process will have reduced contamination. Summary of the Invention
One embodiment of this invention is an apparatus for film deposition having first and second magnetron targets within a sputtering chamber, wherein the second target is shaped as a ring, or a method for film deposition employing such apparatus.
A further embodiment of this invention is an apparatus for film deposition having first and second magnetron targets within a sputtering chamber, wherein the second target has an aperture that provides exterior and interior surfaces from which target material may be sputtered, or a method for film deposition employing such apparatus.
Another embodiment of this invention is, in a method of depositing a film by sputtering from a plurality of magnetron targets in a sputtering chamber, the step of periodically shifting the negative potential to a magnetron target that is shaped as a ring.
Yet another embodiment of this invention is, in a method of depositing a film by sputtering from a plurality of magnetron targets in a sputtering chamber, the step of periodically shifting the negative potential to a magnetron target that has an aperture that provides exterior and interior surfaces from which target material may be sputtered.
Brief Description of the Drawing Figure 1 is a diagram of components of a sputtering device . Detailed Description of the Invention
In this invention, a method and apparatus is provided for the epitaxial sputter deposition of a film on a substrate, particularly thick epilayers, at a high deposition rate. It is preferred to deposit the epitaxial films by using an AC magnetron sputtering technique .
A sputter epitaxy chamber for sputtering target materials, such as nonconductive materials, contains a plurality of magnetron sputtering targets as sources of sputter material . The targets may have different shapes, such as a planar shape and a ring shape. The preferred nature of ring-shaped magnetron is such that it possesses an aperture that provides exterior and interior surfaces from which target material may be sputtered. The ring-shaped magnetron need not be a perfect circle. It may formed in any shape that is suitable for the sputtering chamber, such as an essentially perfect circle, imperfectly circular, eliptical or polygonal, so long as the aperture is present. There is no limitation on the variety of dimensional sizes the ring-shaped magnetron may take along all three axes provided that it functions as intended for use as a magnetron.
An AC power supply is connected to first and second magnetron targets in a sputtering chamber, one of the magnetron targets being the ring-shaped magnetron. The ring-shaped magnetron may be disposed between another magnetron target, such as a planar, rectangular magnetron possessing no aperture, and the substrate. The ring-shaped magnetron may be constructed from the same material as another target or from just one or only some of the materials from which another target may be prepared. During the deposition process, first and second targets, one of which is the ring-shaped magnetron, act periodically as the cathode and the anode . Sputtering from the magnetron target and ring-target together forms a film on the substrate.
A sputter epitaxy chamber for sputtering nonconductive materials includes two magnetron sputtering sources, at least one shaped as a ring and a substrate. Instead of having two planar, rectangular magnetron sputtering sources and connecting an AC power supply between them, we propose in this invention to have a plurality of magnetron sputtering sources, one of which is shaped as a ring. This magnetron is constructed from the same material as the other, or from one of the elements that make up the other target if it is a compound of multiple elements. During the deposition process, both targets act periodically as a cathode and an anode . The use of AC power causes the negative potential to periodically shift from one magnetron to another. When the negative potential shifts to the ring-shaped magnetron, material is sputtered from that target for deposition onto the substrate. The film on the substrate is thus sputtered from both first and second magnetrons, one of which is the ring-shaped magnetron. This reduces the deposition of contaminants on the film that might arise if AC is used with one pole run to a magnetron and one pole run to ground.
In Fig. 1, components of a sputter epitaxy chamber are shown, including a first magnetron sputtering source 2, a ring-shaped magnetron sputtering source 4, and a substrate 6. An AC power supply 8 is connected to the two magnetrons. The ring-shaped magnetron is disposed between the first target and the substrate. The ring-shaped magnetron is constructed from the same material as the first magnetron, or from just one of or some of the elements that make up the first target if the first target is a compound of multiple elements. During the deposition process, the first target and the ring-shaped target act periodically as the cathode and the anode . The presence of the ring- shaped target helps to reduce contamination of the sputtered epitaxial film when the first magnetron target has positive voltage. Sputtering from both magnetron targets forms a film on the substrate. The ring-shaped magnetron target may have a cooling arrangement, such as a water jacket, since the deposition of thick films requires longer periods of sputtering.

Claims

ClaimsWhat is claimed is:
1. An apparatus for film deposition comprising first and second magnetron targets within a sputtering chamber, wherein the second target has an aperture that provides exterior and interior surfaces from which target material may be sputtered.
2. An apparatus according to Claim 1 wherein the second target is shaped as an essentially perfect circle.
3. An apparatus according to Claim 1 wherein the second target is disposed between the first target and a substrate on which the film is deposited.
4. An apparatus according to Claim 1 wherein the second target has negative potential .
5. An apparatus according to Claim 1 wherein the sputtered deposition is powered by alternating current .
6. An apparatus according to Claim 1 wherein the first and second targets are prepared from the same or different materials.
7. An apparatus according to Claim 1 wherein the second target is cooled.
8. An apparatus according to Claim 1 wherein the film is a thick film.
9. An apparatus for film deposition comprising first and second magnetron targets within a sputtering chamber, wherein the second target is shaped as a ring .
10. In a method of depositing a film by sputtering from a plurality of magnetron targets in a sputtering chamber, the step of periodically shifting the negative potential to a magnetron target that has an aperture that provides exterior and interior surfaces from which target material may be sputtered.
11. In a method of depositing a film by sputtering from a plurality of magnetron targets in a sputtering chamber, the step of periodically shifting the negative potential to a magnetron target that is shaped as a ring.
12. A method of depositing a film comprising sputtering the film with the apparatus of any one of Claims 1-9.
PCT/US2002/030866 2001-09-27 2002-09-27 Method and apparatus for sputter deposition of epilayers with high deposition rate WO2003027351A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2003530911A JP2005504171A (en) 2001-09-27 2002-09-27 Method and apparatus for sputter deposition of epilayers at high deposition rates
EP02799663A EP1438443A1 (en) 2001-09-27 2002-09-27 Method and apparatus for sputter deposition of epilayers with high deposition rate
KR10-2004-7004399A KR20040044995A (en) 2001-09-27 2002-09-27 Method and apparatus for sputter deposition of epilayers with high deposition rate

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US32533101P 2001-09-27 2001-09-27
US60/325,331 2001-09-27

Publications (1)

Publication Number Publication Date
WO2003027351A1 true WO2003027351A1 (en) 2003-04-03

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/030866 WO2003027351A1 (en) 2001-09-27 2002-09-27 Method and apparatus for sputter deposition of epilayers with high deposition rate

Country Status (4)

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EP (1) EP1438443A1 (en)
JP (1) JP2005504171A (en)
KR (1) KR20040044995A (en)
WO (1) WO2003027351A1 (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5415757A (en) * 1991-11-26 1995-05-16 Leybold Aktiengesellschaft Apparatus for coating a substrate with electrically nonconductive coatings
EP0807954A1 (en) * 1996-05-09 1997-11-19 Applied Materials, Inc. Coils for generating a plasma and for sputtering
WO1999008308A1 (en) * 1997-08-07 1999-02-18 Applied Materials, Inc. Plasma vapor deposition with coil sputtering
GB2346155A (en) * 1999-01-06 2000-08-02 Trikon Holdings Ltd Sputtering apparatus
US6231725B1 (en) * 1998-08-04 2001-05-15 Applied Materials, Inc. Apparatus for sputtering material onto a workpiece with the aid of a plasma

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63243270A (en) * 1987-03-30 1988-10-11 Sumitomo Light Metal Ind Ltd Formation of multilayered thin film by sputtering
JP2849771B2 (en) * 1990-07-30 1999-01-27 日本電信電話株式会社 Sputter type ion source
WO1992007969A1 (en) * 1990-10-31 1992-05-14 International Business Machines Corporation Apparatus for depositing material into high aspect ratio holes
JPH10219442A (en) * 1996-12-05 1998-08-18 Tokyo Electron Ltd Sputtering apparatus
JPH11269643A (en) * 1998-03-20 1999-10-05 Toshiba Corp Deposition apparatus and deposition method using the same
JPH11310874A (en) * 1998-04-27 1999-11-09 Canon Inc Opposite magnetron composite sputtering device and formation of thin film

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5415757A (en) * 1991-11-26 1995-05-16 Leybold Aktiengesellschaft Apparatus for coating a substrate with electrically nonconductive coatings
EP0807954A1 (en) * 1996-05-09 1997-11-19 Applied Materials, Inc. Coils for generating a plasma and for sputtering
WO1999008308A1 (en) * 1997-08-07 1999-02-18 Applied Materials, Inc. Plasma vapor deposition with coil sputtering
US6231725B1 (en) * 1998-08-04 2001-05-15 Applied Materials, Inc. Apparatus for sputtering material onto a workpiece with the aid of a plasma
GB2346155A (en) * 1999-01-06 2000-08-02 Trikon Holdings Ltd Sputtering apparatus

Also Published As

Publication number Publication date
KR20040044995A (en) 2004-05-31
EP1438443A1 (en) 2004-07-21
JP2005504171A (en) 2005-02-10

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