WO2003027351A1 - Method and apparatus for sputter deposition of epilayers with high deposition rate - Google Patents
Method and apparatus for sputter deposition of epilayers with high deposition rate Download PDFInfo
- Publication number
- WO2003027351A1 WO2003027351A1 PCT/US2002/030866 US0230866W WO03027351A1 WO 2003027351 A1 WO2003027351 A1 WO 2003027351A1 US 0230866 W US0230866 W US 0230866W WO 03027351 A1 WO03027351 A1 WO 03027351A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- target
- magnetron
- sputtering
- film
- shaped
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
Definitions
- This invention relates to the sputter deposition of epilayers using a plurality of magnetrons having different shapes.
- Radio frequency ( "RF” ) magnetron sputtering techniques are widely used for the sputtering of thin films.
- RF radio frequency
- AC alternating current
- One embodiment of this invention is an apparatus for film deposition having first and second magnetron targets within a sputtering chamber, wherein the second target is shaped as a ring, or a method for film deposition employing such apparatus.
- a further embodiment of this invention is an apparatus for film deposition having first and second magnetron targets within a sputtering chamber, wherein the second target has an aperture that provides exterior and interior surfaces from which target material may be sputtered, or a method for film deposition employing such apparatus.
- Another embodiment of this invention is, in a method of depositing a film by sputtering from a plurality of magnetron targets in a sputtering chamber, the step of periodically shifting the negative potential to a magnetron target that is shaped as a ring.
- Yet another embodiment of this invention is, in a method of depositing a film by sputtering from a plurality of magnetron targets in a sputtering chamber, the step of periodically shifting the negative potential to a magnetron target that has an aperture that provides exterior and interior surfaces from which target material may be sputtered.
- a method and apparatus for the epitaxial sputter deposition of a film on a substrate, particularly thick epilayers, at a high deposition rate. It is preferred to deposit the epitaxial films by using an AC magnetron sputtering technique .
- a sputter epitaxy chamber for sputtering target materials contains a plurality of magnetron sputtering targets as sources of sputter material .
- the targets may have different shapes, such as a planar shape and a ring shape.
- the preferred nature of ring-shaped magnetron is such that it possesses an aperture that provides exterior and interior surfaces from which target material may be sputtered.
- the ring-shaped magnetron need not be a perfect circle. It may formed in any shape that is suitable for the sputtering chamber, such as an essentially perfect circle, imperfectly circular, eliptical or polygonal, so long as the aperture is present. There is no limitation on the variety of dimensional sizes the ring-shaped magnetron may take along all three axes provided that it functions as intended for use as a magnetron.
- An AC power supply is connected to first and second magnetron targets in a sputtering chamber, one of the magnetron targets being the ring-shaped magnetron.
- the ring-shaped magnetron may be disposed between another magnetron target, such as a planar, rectangular magnetron possessing no aperture, and the substrate.
- the ring-shaped magnetron may be constructed from the same material as another target or from just one or only some of the materials from which another target may be prepared.
- first and second targets one of which is the ring-shaped magnetron, act periodically as the cathode and the anode . Sputtering from the magnetron target and ring-target together forms a film on the substrate.
- a sputter epitaxy chamber for sputtering nonconductive materials includes two magnetron sputtering sources, at least one shaped as a ring and a substrate.
- two magnetron sputtering sources instead of having two planar, rectangular magnetron sputtering sources and connecting an AC power supply between them, we propose in this invention to have a plurality of magnetron sputtering sources, one of which is shaped as a ring.
- This magnetron is constructed from the same material as the other, or from one of the elements that make up the other target if it is a compound of multiple elements.
- both targets act periodically as a cathode and an anode .
- the use of AC power causes the negative potential to periodically shift from one magnetron to another.
- a sputter epitaxy chamber including a first magnetron sputtering source 2, a ring-shaped magnetron sputtering source 4, and a substrate 6.
- An AC power supply 8 is connected to the two magnetrons.
- the ring-shaped magnetron is disposed between the first target and the substrate.
- the ring-shaped magnetron is constructed from the same material as the first magnetron, or from just one of or some of the elements that make up the first target if the first target is a compound of multiple elements.
- the first target and the ring-shaped target act periodically as the cathode and the anode .
- the presence of the ring-shaped target helps to reduce contamination of the sputtered epitaxial film when the first magnetron target has positive voltage. Sputtering from both magnetron targets forms a film on the substrate.
- the ring-shaped magnetron target may have a cooling arrangement, such as a water jacket, since the deposition of thick films requires longer periods of sputtering.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003530911A JP2005504171A (en) | 2001-09-27 | 2002-09-27 | Method and apparatus for sputter deposition of epilayers at high deposition rates |
EP02799663A EP1438443A1 (en) | 2001-09-27 | 2002-09-27 | Method and apparatus for sputter deposition of epilayers with high deposition rate |
KR10-2004-7004399A KR20040044995A (en) | 2001-09-27 | 2002-09-27 | Method and apparatus for sputter deposition of epilayers with high deposition rate |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US32533101P | 2001-09-27 | 2001-09-27 | |
US60/325,331 | 2001-09-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2003027351A1 true WO2003027351A1 (en) | 2003-04-03 |
Family
ID=23267441
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2002/030866 WO2003027351A1 (en) | 2001-09-27 | 2002-09-27 | Method and apparatus for sputter deposition of epilayers with high deposition rate |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1438443A1 (en) |
JP (1) | JP2005504171A (en) |
KR (1) | KR20040044995A (en) |
WO (1) | WO2003027351A1 (en) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5415757A (en) * | 1991-11-26 | 1995-05-16 | Leybold Aktiengesellschaft | Apparatus for coating a substrate with electrically nonconductive coatings |
EP0807954A1 (en) * | 1996-05-09 | 1997-11-19 | Applied Materials, Inc. | Coils for generating a plasma and for sputtering |
WO1999008308A1 (en) * | 1997-08-07 | 1999-02-18 | Applied Materials, Inc. | Plasma vapor deposition with coil sputtering |
GB2346155A (en) * | 1999-01-06 | 2000-08-02 | Trikon Holdings Ltd | Sputtering apparatus |
US6231725B1 (en) * | 1998-08-04 | 2001-05-15 | Applied Materials, Inc. | Apparatus for sputtering material onto a workpiece with the aid of a plasma |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63243270A (en) * | 1987-03-30 | 1988-10-11 | Sumitomo Light Metal Ind Ltd | Formation of multilayered thin film by sputtering |
JP2849771B2 (en) * | 1990-07-30 | 1999-01-27 | 日本電信電話株式会社 | Sputter type ion source |
JPH0816266B2 (en) * | 1990-10-31 | 1996-02-21 | インターナショナル・ビジネス・マシーンズ・コーポレーション | Device for depositing material in high aspect ratio holes |
JPH10219442A (en) * | 1996-12-05 | 1998-08-18 | Tokyo Electron Ltd | Sputtering apparatus |
JPH11269643A (en) * | 1998-03-20 | 1999-10-05 | Toshiba Corp | Deposition apparatus and deposition method using the same |
JPH11310874A (en) * | 1998-04-27 | 1999-11-09 | Canon Inc | Opposite magnetron composite sputtering device and formation of thin film |
-
2002
- 2002-09-27 EP EP02799663A patent/EP1438443A1/en not_active Withdrawn
- 2002-09-27 JP JP2003530911A patent/JP2005504171A/en active Pending
- 2002-09-27 WO PCT/US2002/030866 patent/WO2003027351A1/en not_active Application Discontinuation
- 2002-09-27 KR KR10-2004-7004399A patent/KR20040044995A/en not_active Application Discontinuation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5415757A (en) * | 1991-11-26 | 1995-05-16 | Leybold Aktiengesellschaft | Apparatus for coating a substrate with electrically nonconductive coatings |
EP0807954A1 (en) * | 1996-05-09 | 1997-11-19 | Applied Materials, Inc. | Coils for generating a plasma and for sputtering |
WO1999008308A1 (en) * | 1997-08-07 | 1999-02-18 | Applied Materials, Inc. | Plasma vapor deposition with coil sputtering |
US6231725B1 (en) * | 1998-08-04 | 2001-05-15 | Applied Materials, Inc. | Apparatus for sputtering material onto a workpiece with the aid of a plasma |
GB2346155A (en) * | 1999-01-06 | 2000-08-02 | Trikon Holdings Ltd | Sputtering apparatus |
Also Published As
Publication number | Publication date |
---|---|
JP2005504171A (en) | 2005-02-10 |
KR20040044995A (en) | 2004-05-31 |
EP1438443A1 (en) | 2004-07-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4415427A (en) | Thin film deposition by sputtering | |
US20090308739A1 (en) | Wafer processing deposition shielding components | |
CN109642312A (en) | High density, low stress amorphous carbon-film and its deposition method and equipment | |
US5232571A (en) | Aluminum nitride deposition using an AlN/Al sputter cycle technique | |
US8864954B2 (en) | Sputtering lithium-containing material with multiple targets | |
US20090308732A1 (en) | Apparatus and method for uniform deposition | |
US20040231973A1 (en) | Sputter source, sputtering device, and sputtering method | |
US6623610B1 (en) | Magnetron sputtering target for magnetic materials | |
WO2014107558A1 (en) | Silicon sputtering target with enhanced surface profile and improved performance and methods of making the same | |
WO2009020129A1 (en) | Plasma processing method and plasma processing apparatus | |
EP1346085A1 (en) | Methods and apparatus for producing m'n based materials | |
CN104136652A (en) | Method for sputtering for processes with a pre-stabilized plasma | |
WO2010123680A2 (en) | Wafer processing deposition shielding components | |
KR20160117350A (en) | Method and Apparatus for Depositing a Material | |
US10947639B2 (en) | Molten target sputtering (MTS) deposition for enhanced kinetic energy and flux of ionized atoms | |
US6328857B1 (en) | Method for forming coating on substrate and sputtering apparatus used for the method | |
WO2018175689A1 (en) | Magnetron sputtering source for insulating target materials | |
WO2003027351A1 (en) | Method and apparatus for sputter deposition of epilayers with high deposition rate | |
EP1144713B1 (en) | High target utilization magnetic arrangement for a truncated conical sputtering target | |
EP0230652A1 (en) | Apparatus for creating a vacuum deposited alloy or composition and application of such an apparatus | |
JP2000204468A (en) | Multidivided sputtering target | |
CN101646799B (en) | Magnetron source for deposition on large substrates | |
Felmetsger et al. | Effect of pre-deposition RF plasma etching on wafer surface morphology and crystal orientation of piezoelectric AlN thin films | |
JPH0360916B2 (en) | ||
CN108690962B (en) | Magnetron sputtering equipment and magnetron sputtering deposition method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BY BZ CA CH CN CO CR CU CZ DE DM DZ EC EE ES FI GB GD GE GH HR HU ID IL IN IS JP KE KG KP KR LC LK LR LS LT LU LV MA MD MG MN MW MX MZ NO NZ OM PH PL PT RU SD SE SG SI SK SL TJ TM TN TR TZ UA UG US UZ VC VN YU ZA ZM |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): GH GM KE LS MW MZ SD SL SZ UG ZM ZW AM AZ BY KG KZ RU TJ TM AT BE BG CH CY CZ DK EE ES FI FR GB GR IE IT LU MC PT SE SK TR BF BJ CF CG CI GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
WWE | Wipo information: entry into national phase |
Ref document number: 2003530911 Country of ref document: JP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020047004399 Country of ref document: KR |
|
WWE | Wipo information: entry into national phase |
Ref document number: 20028191323 Country of ref document: CN |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2002799663 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 2002799663 Country of ref document: EP |
|
WWW | Wipo information: withdrawn in national office |
Ref document number: 2002799663 Country of ref document: EP |