WO2003015475A1 - Anti-reflective organic light-emitting device - Google Patents
Anti-reflective organic light-emitting device Download PDFInfo
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- WO2003015475A1 WO2003015475A1 PCT/KR2002/001497 KR0201497W WO03015475A1 WO 2003015475 A1 WO2003015475 A1 WO 2003015475A1 KR 0201497 W KR0201497 W KR 0201497W WO 03015475 A1 WO03015475 A1 WO 03015475A1
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- WO
- WIPO (PCT)
- Prior art keywords
- light
- layer
- organic
- emitting device
- absorbing material
- Prior art date
Links
- 230000003667 anti-reflective effect Effects 0.000 title claims abstract description 26
- 239000010410 layer Substances 0.000 claims abstract description 80
- 239000011358 absorbing material Substances 0.000 claims abstract description 33
- 239000012044 organic layer Substances 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 9
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 238000004528 spin coating Methods 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 5
- 239000006229 carbon black Substances 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 239000000049 pigment Substances 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 238000002207 thermal evaporation Methods 0.000 claims description 2
- 238000000149 argon plasma sintering Methods 0.000 abstract 1
- 230000010287 polarization Effects 0.000 description 9
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000004305 biphenyl Substances 0.000 description 4
- 235000010290 biphenyl Nutrition 0.000 description 3
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 3
- 239000007983 Tris buffer Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 2
- 229920000767 polyaniline Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- UHXOHPVVEHBKKT-UHFFFAOYSA-N 1-(2,2-diphenylethenyl)-4-[4-(2,2-diphenylethenyl)phenyl]benzene Chemical compound C=1C=C(C=2C=CC(C=C(C=3C=CC=CC=3)C=3C=CC=CC=3)=CC=2)C=CC=1C=C(C=1C=CC=CC=1)C1=CC=CC=C1 UHXOHPVVEHBKKT-UHFFFAOYSA-N 0.000 description 1
- UEXNQQMEAYHXMR-UHFFFAOYSA-N 2,5-bis(2,2-diphenylethenyl)-5-phenylcyclohexa-1,3-diene Chemical group C1=CC(C=2C=CC=CC=2)(C=C(C=2C=CC=CC=2)C=2C=CC=CC=2)CC=C1C=C(C=1C=CC=CC=1)C1=CC=CC=C1 UEXNQQMEAYHXMR-UHFFFAOYSA-N 0.000 description 1
- ZNJRONVKWRHYBF-VOTSOKGWSA-N 4-(dicyanomethylene)-2-methyl-6-julolidyl-9-enyl-4h-pyran Chemical compound O1C(C)=CC(=C(C#N)C#N)C=C1\C=C\C1=CC(CCCN2CCC3)=C2C3=C1 ZNJRONVKWRHYBF-VOTSOKGWSA-N 0.000 description 1
- OYUKRQOCPFZNHR-UHFFFAOYSA-N 4-methylquinolin-8-ol Chemical compound C1=CC=C2C(C)=CC=NC2=C1O OYUKRQOCPFZNHR-UHFFFAOYSA-N 0.000 description 1
- DIVZFUBWFAOMCW-UHFFFAOYSA-N 4-n-(3-methylphenyl)-1-n,1-n-bis[4-(n-(3-methylphenyl)anilino)phenyl]-4-n-phenylbenzene-1,4-diamine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)N(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 DIVZFUBWFAOMCW-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910019015 Mg-Ag Inorganic materials 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229940027991 antiseptic and disinfectant quinoline derivative Drugs 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- GQVWHWAWLPCBHB-UHFFFAOYSA-L beryllium;benzo[h]quinolin-10-olate Chemical compound [Be+2].C1=CC=NC2=C3C([O-])=CC=CC3=CC=C21.C1=CC=NC2=C3C([O-])=CC=CC3=CC=C21 GQVWHWAWLPCBHB-UHFFFAOYSA-L 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229920000547 conjugated polymer Polymers 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 125000005678 ethenylene group Chemical group [H]C([*:1])=C([H])[*:2] 0.000 description 1
- 229920005570 flexible polymer Polymers 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 125000000040 m-tolyl group Chemical group [H]C1=C([H])C(*)=C([H])C(=C1[H])C([H])([H])[H] 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- WCPAKWJPBJAGKN-UHFFFAOYSA-N oxadiazole Chemical compound C1=CON=N1 WCPAKWJPBJAGKN-UHFFFAOYSA-N 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- -1 poly(phenylene vinylene) Polymers 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 150000003248 quinolines Chemical class 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
Definitions
- the present invention relates to an anti-reflective organic light-emitting device (OLED) and, more particularly, to an anti-reflective OLED capable of preventing the reflection and/or scattering of an external light at a cathode of the OLED.
- OLED organic light-emitting device
- the OLED is one of representative flat panel displays along with a liquid crystal display (LCD), a plasma display panel (PDP) and a field emission display (FED).
- the OLED includes the first electrode 12, at least one organic light-emitting layer 14 formed on the first electrode 12, and the second electrode 16 formed on the light-emitting layer 14 while facing the first electrode 12.
- the first electrode 12 is made of materials having a high work function, for example, Indium Tin Oxide, polyaniline and, Ag
- the second electrode 16 is made of materials having a low work function (generally, less than 4eV), for example, Al, Mg-Ag, Li, and Ca.
- the organic light-emitting layer 14 is composed of an organic luminescent single compound or a conjugated polymer.
- a hole transporting layer 22 can be provided between the first electrode 12 and the light-emitting layer 14.
- an electron transporting layer 26 is generally provided between the second electrode 16 and the light-emitting layer 14 for electron injection and transportation.
- the hole and the electron are produced at the first electrode 12 and the second electrode 16 by applying a voltage.
- the produced hole and the electron are injected into the light-emitting layer 14 via the hole transporting layer 22 and the electron transporting layer 26, respectively.
- the OLED is a self light-emitting device, and it has many advantages including a high response speed, a wide viewing angle and a low driving voltage of about 4 V.
- the cathode 16 of the OLED is made of a metal having a light reflective smooth surface, and the display images produced in the OLED is generally observed through the transparent the anode 12 and substrate 10.
- the light from the outside of the OLED can be reflected at the surface of the cathode 16, which deteriorates the contrast ratio of the display images of the
- the anti-reflective film 30 includes a linear polarization film 32 and a ( ⁇ /4) film 34 attached at a surface of the linear polarization film 32.
- the linear polarization film 32 is for linearly-polarizing a light
- the ( ⁇ /4) film 34 is for rotating the polarization direction of the linearly-polarized light by 90 degrees.
- a protective film 38 can be formed on the other surface of the linear polarization film 32, and the ( ⁇ 14) film 34 is bonded to the substrate 10 of the OLED with an adhesive film 36.
- the non-polarized light from outside is linearly-polarized in a certain direction when passing the linear polarization film 32, and then the polarization direction of the linearly-polarized light is rotated by 90 degree at ( ⁇ 14) film 34.
- the 90 degree-rotated light is then reflected at the surface of the cathode
- the anti-reflective film 30 increases the cost of OLED, and additional step of bonding the anti-reflective film 30 to the substrate 10 OLED is required for producing the OLED.
- OLED having a simple structure and not requiring a conventional anti-reflective film.
- the present invention provides an anti- reflective OLED comprising a first electrode formed on a transparent substrate, at least one organic layer including an organic light-emitting layer, a second electrode and a light-absorbing material.
- the at least one organic layer is interposed between the first electrode and the second electrode, and includes an electron injecting layer and/or an electron transporting layer between the organic light-emitting layer and the second electrode.
- the light-absorbing material is disposed in at least one organic layer, or on a boundary of the organic layer.
- the light-absorbing material is disposed in the electron injecting layer or the electron transporting layer in the amount of about 0.1 to 50 weight %.
- the light-absorbing material can form a layer of thickness of about 1 to 500 A on the boundary of the organic layer.
- the light-absorbing material include a carbon black, an iron oxide, a black dye, a black pigment and mixtures thereof.
- Fig. 1 is a cross sectional view of a conventional OLED
- Fig. 2 is a cross sectional view of a conventional anti-reflective film for preventing the light reflection on OLED;
- Fig. 3 is a cross sectional view of an OLED according to an embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION
- the OLED according to an embodiment of the present invention includes the first electrode 12 formed on a transparent substrate 10, a hole injecting layer 21 , and a hole transporting layer 22 for injecting and transporting holes into an organic light-emitting layer 14.
- the organic light-emitting layer 14 On the hole transporting layer 22, the organic light-emitting layer 14, an electron transporting layer 26, an electron injecting layer 25 and the second electrode 16 are successively formed.
- the OLED according to the embodiment of the present invention further includes a light-absorbing material 40 which is disposed in at least one organic layer between the first electrode 12 and the second electrode 16, for example, in the electron injecting layer 25, in the electron transporting layer 26 or in the organic light-emitting layer 14.
- the light from outside of the OLED is absorbed or blocked by the light-absorbing material 40, and the external light cannot reach to or reflect at the second electrode 16, which enhances the contrast ratio of a display image of the OLED.
- the light-absorbing material 40 can form a layer on a boundary of the organic layer, for example, between the electron injecting layer 25 and the electron transporting layer 26, and between the electron transporting layer 26 and the organic light-emitting layer 14.
- the light-absorbing material 40 can be an organic material or an inorganic material, and various materials having the light absorption property can be widely used as the light-absorbing material 40.
- the non-limiting examples of the light-absorbing material 40 includes a carbon black, a iron oxide, a black dye, or a black pigment such as Fe 3 0 4 , Fe 2 0 3 Mn 2 03 , and more preferable material is carbon black or the iron oxide. If properly choosing the light-absorbing material 40 with considering the potentials of the organic layers, the light-absorbing material 40 can also work as the electron injecting layer 25, the electron transporting layer 26 or a hole blocking layer.
- the layer including the light-absorbing material 40 can be formed by various conventional film casting methods, for example, by spin-coating or spin- casting the mixture of the light-absorbing material 40 and the materials for forming the organic layer such as electron injecting layer 25 and the electron transporting layer 26.
- the mixture of the light-absorbing material 40 and the materials for forming the electron injecting layer 25, or the electron transporting layer 26 can be co-deposited by a thermal evaporation, a sputtering or a chemical vapor deposition to form the organic layer including the light-absorbing material 40.
- the light-absorbing material 40 forms a light-absorbing layer on the boundary of the organic layer
- the light-absorbing layer can be formed by various conventional film casting methods, for example, spin-coating, spin-casting and sputtering.
- the amount of the light-absorbing material 40, which is disposed or doped in the electron injecting layer 25 or the electron transporting layer 26, is preferably about 0.1 to 50 weight%, and more preferably, about 1 to 10 weight% on the basis of the total weight of the organic layer including the light-absorbing material 40. Meanwhile, if the light-absorbing material 40 forms a separate light-absorbing layer by deposition, the thickness of the light-absorbing layer is about 1 to 500 A, preferably about 5 to 100 A. If the amount of the light-absorbing material 40 is less than 1 weight% or the thickness of the light-absorbing layer is less than 1 A, the reflection of external light may not be sufficiently prevented. If the amount of the light-absorbing material 40 is more than 10 weight% or the thickness of the light-absorbing layer is more than 500 A, the transportation of electron or hole can be restricted, and the luminescent efficiency of the OLED can be deteriorated.
- the organic light-emitting layer 14 can be made of various conventional chemical compound for manufacturing the OLED.
- an organic luminescent single compound, oligomer or polymer can be used to form the organic light-emitting layer 14.
- organic luminescent compound includes tris(8-quinolinolato)aluminum (Alq 3 ), 10-benzo[h]quinolinol-beryllium complex (BeBq 2 ) or tris(4-methyl-8-quinolinolate)aluminum (Almq), which emits green light (540-550 nm).
- blue luminescent single compound examples include a metal complex such as Balq (Bis(2-methyl-8-quinolinolato)(para-phenyl- phenolato)aluminum) or an organic compound such as strylarylene-based derivatives DPVBi (1 ,4-bis(2,2'-diphenyl-vinyl)biphenyl), oxadiazole-based derivatives, bisstrylanthrancene-based derivatives, bisstrylanthracene-based derivatives such as BczVBi (4,4'-Bis((2-carbazole)vinylene)biphenyl), or ⁇ -NPD
- a metal complex such as Balq (Bis(2-methyl-8-quinolinolato)(para-phenyl- phenolato)aluminum) or an organic compound such as strylarylene-based derivatives DPVBi (1 ,4-bis(2,2'-diphenyl-vinyl)biphen
- the red luminescent organic compound examples include [2-methyl-6-[2-(2,3,6,7-tetrahydro-1 H, 5H- benzo[/j] quinolizin-9-j )ethenyl]-4H-pyran-4-ylidene]propane-dinit ⁇ e (DCM2).
- DCM2 dimethyl-6-[2-(2,3,6,7-tetrahydro-1 H, 5H- benzo[/j] quinolizin-9-j )ethenyl]-4H-pyran-4-ylidene]propane-dinit ⁇ e
- a dopant having high luminescent efficiency can also be added to the organic light-emitting layer 14.
- the organic light-emitting layer 14 can be formed with a luminescent polymer, such as PPP (poly (p-phenylenylene) and PPV (poly(phenylene vinylene).
- the hole injection layer 21 and the hole transporting layer 22 can be formed to facilitate the injection and transportation of holes and to block electrons.
- tri(phenyldiamine) derivatives, strylamine derivatives or amine derivatives having fused aromatic ring can be used to form the hole injecting layer 21 and the hole transporting layer 22.
- 4,4',4"-tris[3- methylphenyl (phenyl)amino]triphenylamine (m-MTDATA) or copper pthalocyanine (CuPc) can be used to form the hole injection layer 21
- m-MTDATA methylphenyl
- CuPc copper pthalocyanine
- TPD N-N'-diphenyl-N- N'bis(3-methylphenyl)-[1-1'-biphenyl]-4-4'-diamine
- TPD N-N'-diphenyl-N- N'bis(3-methylphenyl)-[1-1'-biphenyl]-4-4'-diamine
- ⁇ -NPD 4,4'bis[N-(1- napthyl-N-phenyl-amino)biphenyl]
- the electron injecting layer 25 and the electron transporting layer 26 is to inject or transport electrons to the organic light-emitting layer 14 from the cathode 16, and quinoline derivatives such as Alq 3 can be conventionally used to form the electron injecting and transporting layer 25, 26.
- the thickness of the light-emitting layer 14, the hole injection layer 21 , the hole transporting layer 22, the electron injection layer 25 or the electron transporting layer 26 can be varied according to the use of
- OLED materials for forming the layers, and manufacturing method, but are generally 5-500 nm.
- the first electrode 12 can be conventionally formed with ITO, polyaniline or Ag, which has a high work function
- the second electrode 16 for producing electrons can be conventionally formed with Al, Mg, Li, Ca, or alloy thereof, which has a low work function
- the substrate 10 is also well-known in the art, and can be made of transparent material such as glass, flexible polymer film or semiconductor such as silicon or gallium arsenide.
- the light-absorbing material is doped in at least one layer between the anode and the cathode of OLED, which prevents or minimizes the external light reflection at the cathode, and improves the contrast ratio of the OLED.
- the OLED according to the present invention has simple structure and can be produced with low cost compared with the conventional OLED having the anti-reflective film.
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR2001-48207 | 2001-08-10 | ||
KR10-2001-0048207A KR100424204B1 (en) | 2001-08-10 | 2001-08-10 | Light Non-refractive Organic Electroluminescence device |
Publications (1)
Publication Number | Publication Date |
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WO2003015475A1 true WO2003015475A1 (en) | 2003-02-20 |
Family
ID=19713072
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2002/001497 WO2003015475A1 (en) | 2001-08-10 | 2002-08-07 | Anti-reflective organic light-emitting device |
Country Status (2)
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KR (1) | KR100424204B1 (en) |
WO (1) | WO2003015475A1 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004020245A1 (en) * | 2004-04-22 | 2005-12-22 | Schott Ag | Organic, electro-optical element with increased coupling efficiency |
US7446462B2 (en) | 2005-02-23 | 2008-11-04 | Cheil Industries, Inc. | Brightness-enhanced multilayer optical film with low reflectivity for display and organic light emitting diode display using the same |
JP2008277679A (en) * | 2007-05-07 | 2008-11-13 | Canon Inc | Display device |
WO2011060748A1 (en) | 2009-11-23 | 2011-05-26 | Shm, S.R.O. | Pvd method and apparatus |
TWI475737B (en) * | 2006-03-08 | 2015-03-01 | Semiconductor Energy Lab | Light emitting element, light emitting device, and electronic device |
CN110323344A (en) * | 2018-03-28 | 2019-10-11 | 夏普株式会社 | Light emitting device including the optics cavity with low angle color shift |
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Publication number | Priority date | Publication date | Assignee | Title |
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KR100650046B1 (en) * | 2002-11-20 | 2006-11-27 | 엘지전자 주식회사 | High efficient organic electroluminescent device |
JPWO2005041155A1 (en) * | 2003-10-24 | 2007-04-26 | 東芝松下ディスプレイテクノロジー株式会社 | Display device |
KR100829760B1 (en) * | 2007-04-10 | 2008-05-15 | 삼성에스디아이 주식회사 | Method of manufacturing the organic light emitting device, and organic light emitting device manufactured by using the same |
KR102080130B1 (en) | 2013-06-25 | 2020-02-24 | 삼성디스플레이 주식회사 | Organic light emitting diode display |
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JPH11273870A (en) * | 1998-03-24 | 1999-10-08 | Tdk Corp | Organic el element |
KR100267054B1 (en) * | 1998-04-22 | 2000-09-15 | 김선욱 | Organic light-emitting device having an improved contrast ratio |
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- 2001-08-10 KR KR10-2001-0048207A patent/KR100424204B1/en active IP Right Grant
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JPS61284092A (en) * | 1985-06-07 | 1986-12-15 | アルプス電気株式会社 | Thin film el display element |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004020245A1 (en) * | 2004-04-22 | 2005-12-22 | Schott Ag | Organic, electro-optical element with increased coupling efficiency |
US7446462B2 (en) | 2005-02-23 | 2008-11-04 | Cheil Industries, Inc. | Brightness-enhanced multilayer optical film with low reflectivity for display and organic light emitting diode display using the same |
TWI475737B (en) * | 2006-03-08 | 2015-03-01 | Semiconductor Energy Lab | Light emitting element, light emitting device, and electronic device |
JP2008277679A (en) * | 2007-05-07 | 2008-11-13 | Canon Inc | Display device |
WO2011060748A1 (en) | 2009-11-23 | 2011-05-26 | Shm, S.R.O. | Pvd method and apparatus |
CN110323344A (en) * | 2018-03-28 | 2019-10-11 | 夏普株式会社 | Light emitting device including the optics cavity with low angle color shift |
CN110323344B (en) * | 2018-03-28 | 2021-07-09 | 夏普株式会社 | Light emitting device including optical cavity with low angular color shift |
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KR20030013923A (en) | 2003-02-15 |
KR100424204B1 (en) | 2004-03-24 |
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