WO2003009359A1 - Procede de formation d'une structure a couches multiples a parametres predetermines - Google Patents

Procede de formation d'une structure a couches multiples a parametres predetermines Download PDF

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Publication number
WO2003009359A1
WO2003009359A1 PCT/RU2002/000332 RU0200332W WO03009359A1 WO 2003009359 A1 WO2003009359 A1 WO 2003009359A1 RU 0200332 W RU0200332 W RU 0200332W WO 03009359 A1 WO03009359 A1 WO 03009359A1
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WIPO (PCT)
Prior art keywords
layer
layers
particles
slοev
different
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Application number
PCT/RU2002/000332
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English (en)
Russian (ru)
Inventor
Boris Aronovich Gurovich
Evgenia Anatolievna Kuleshova
Dmitry Iosifovich Dolgy
Original Assignee
Boris Aronovich Gurovich
Evgenia Anatolievna Kuleshova
Dmitry Iosifovich Dolgy
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Application filed by Boris Aronovich Gurovich, Evgenia Anatolievna Kuleshova, Dmitry Iosifovich Dolgy filed Critical Boris Aronovich Gurovich
Publication of WO2003009359A1 publication Critical patent/WO2003009359A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate

Definitions

  • the invention is available to the public, in particular, to create a medium for recording and storing information, or to prevent the use of large quantities of equipment.
  • a well-known method is that the device obtained is not a complete function that is intended to be an advantageous function.
  • a well-known well-being is a complication of its existence, t.k. It buys a large number of different operation.
  • Spray each of the layers with the required properties is used to process different types of processes - spraying, spraying, chemical spraying, etc.
  • s ⁇ zdaniya elemen ⁇ v s ⁇ u ⁇ u ⁇ y is ⁇ lzuyu ⁇ ⁇ li ⁇ g ⁇ a ⁇ iyu, ele ⁇ nn ⁇ luchevuyu li ⁇ g ⁇ a ⁇ iyu and ⁇ azlichn ⁇ e ⁇ avlenie - i ⁇ nn ⁇ - ⁇ ea ⁇ ivn ⁇ e (su ⁇ e) or ⁇ m ⁇ schyu ⁇ as ⁇ v ⁇ v ⁇ azlichny ⁇ ⁇ isl ⁇ - vinn ⁇ y, s ⁇ lyan ⁇ y, az ⁇ n ⁇ y, ⁇ s ⁇ n ⁇ y and / or i ⁇ mixtures.
  • a well-known method provides for the subsequent application to a glass surface of a crystalline apron, and in case of a negative, an oxides of brown. After that, the participation of a large-scale industrial vehicle allows the participation of a group of employees in order to change its property. In this case - for the creation of areas of ⁇ -region of transparency.
  • a well-known method is limited in its use, t. ⁇ . due to the introduction of particles (ions), there is a change in only the many properties in the limited circle of materials. Therefore, with its help, many structures could not be created, which are completed devices of a multifunctional purpose.
  • a well-known multifaceted structure is a simple one. First, a single coat is applied. Then, at the preset drawing, you change the properties of the material by deleting the atoms by irradiating the layer with the manual accelerated particles. Next, the following is applied, in a simple set point, they alter the properties of the material by removing the atoms and irradiating the applied layer with the accelerated parts.
  • the limitations of the method are its disadvantageous high productivity, t. ⁇ . It is necessary to examine each layer at a separate investigation; For the use of each drawing, a custom template is used, which creates the possibility of combining the drawings in different cases. When drawing the other side of the drawing on the first layer, it reduces the cost-effective manufacture of the product and the cost of the product. Otherwise, the well-known method is intended for the construction of only a building that restricts its functional capabilities.
  • the thickness of each layer and all layers is generally chosen no more than the length of a long run of accelerated particle beams. Changing the properties of a substance by selectively deleting a compound from two or multiple compounds makes a substantial difference to the increase in costs. that’s Deleting a device causes a change in the composition, crystalline structure, and properties of the material. Dielectrics become elec- trical, non-magnetic materials can acquire magnetic properties, and harmful materials substantially reduce the risk of failure.
  • the parameters of the bunch and materials of the layers are chosen in such a way that selective removal of the atoms in them and the corresponding change in the properties of the materials are taken into account.
  • the long run-away ⁇ ⁇ corresponds to the projection of the vector run-up to the original direction of movement of the particle, i.e. ⁇ ⁇ describes the thickness of the material after which the particle has passed, i.e. is the measure of the particle’s occupation along its original direction, i.e. depth of exploitation. ( ⁇ . Leiman. Interaction of radiation with a solid body and the formation of elementary defective materials ⁇ ., ⁇ Economicstomizdat, 1979, SL 03)).
  • the outer boundary of the total thickness of the “sandwich” and the individual layers depend on the compact type used for the selective removal of particles and energy.
  • the length of the short-range path decreases with an increase in the normal number of bombs or ions that make up the beams. The longest running distance can be reached by using a bunch of vehicles or vehicles.
  • the largest thickness of individual layers or a “sandwich” is generally realized by the maximum energy of particles that make up the bundles. Values ma ⁇ simalny ⁇ ene ⁇ gy, ⁇ ye d ⁇ us ⁇ imy ⁇ i sele ⁇ ivn ⁇ m removing a ⁇ m ⁇ v, limi ⁇ i ⁇ uyu ⁇ sya with ⁇ dn ⁇ y s ⁇ ny, d ⁇ us ⁇ im ⁇ y s ⁇ s ⁇ yu ⁇ iziches ⁇ g ⁇ ⁇ as ⁇ yleniya ve ⁇ neg ⁇ sl ⁇ ya "sandwich", and with d ⁇ ug ⁇ y s ⁇ ny - ⁇ bes ⁇ echeniem d ⁇ s ⁇ a ⁇ chn ⁇ y 8 selective removal of the required atoms.
  • the total thickness of the layers being processed is up to -0.2-0.25 ⁇ m and energy of -10 kE ⁇ .
  • -300 does not allow selective deletion of atoms, and particles with energies of more than 1.5 do not only remove the required atoms, but also make undesirable accidental changes.
  • a separate and / or protective layer may be disposed of on a single applied layer.
  • any two or many prominent compounds For example, metal nitride may occur, which is a result of radiation exposure to the metal.
  • the hydrides of metals, oxides, etc. can be used.
  • the source of the charged particles is selected based on the properties of the material being processed. For example, if you are using a material of a different layer of oxide, it is preferable to use any kind of food to avoid it.
  • the running modes of the sources of the charged particles are determined by the calculation method or are adjusted experimentally. Particular cases of sale in place of oxides, hydrides and nitrates of metals may be used by any other compounds that are part of the components that are not compatible with this.
  • separating dielectric layers may use brown oxides, diamond-like carbon and other films.
  • FIG. 1 A quick description of the drawings in FIG. 1 is illustrated with a multi-part structure with specified parameters; 10
  • EXAMPLE 1 Generally, the method will be implemented as follows. On page 1, consequently, a few layers of 2, 3, 4 of various materials are applied (FIG. 1). Za ⁇ em ⁇ luchennuyu zag ⁇ v ⁇ u ⁇ ib ⁇ a as mn ⁇ g ⁇ sl ⁇ yn ⁇ y s ⁇ u ⁇ u ⁇ y ⁇ bluchayu ⁇ ⁇ uch ⁇ m us ⁇ enny ⁇ chas ⁇ its 5 ⁇ d ⁇ b ⁇ annym ⁇ a ⁇ im ⁇ b ⁇ az ⁇ m, ch ⁇ ⁇ d v ⁇ zdeys ⁇ viem chas ⁇ its on account sele ⁇ ivn ⁇ g ⁇ removal a ⁇ m ⁇ v ⁇ edelenn ⁇ g ⁇ form (s ⁇ a) in ⁇ azhd ⁇ m of sl ⁇ ev, bude ⁇ ⁇ is ⁇ di ⁇ change sv ⁇ ys ⁇ v ⁇ dn ⁇ v ⁇ emenn ⁇ vse ⁇ sl ⁇ ev.
  • the components are sent to the machine through the template (mask) 6, which means that the areas with the changed properties are indicated on the required sections (are omitted).
  • Sources of accelerated particles are selected from the known ones, and, as part of the particles, atoms, ions or electrons may be used.
  • a large-scale structure created and processed by the aforementioned method can be used to end up with a completed device.
  • a large-scale structure created and processed by the aforementioned method can be used to end up with a completed device.
  • 11 ⁇ ealizatsii in ⁇ aches ⁇ ve ⁇ dl ⁇ zh ⁇ i 1 vzya ⁇ ⁇ is ⁇ alliches ⁇ uyu ⁇ las ⁇ inu ⁇ emniya with za ⁇ anee s ⁇ mi ⁇ vannymi therein ⁇ - ⁇ - ⁇ e ⁇ e ⁇ dami, ⁇ b ⁇ azuyuschimi ⁇ anzis ⁇ y, and di ⁇ dy ⁇ . ⁇ ., and overlying sl ⁇ i 2 and 3 of vy ⁇ lni ⁇ diele ⁇ i ⁇ a, ⁇ y ⁇ d v ⁇ zdeys ⁇ viem chas ⁇ its ⁇ e ⁇ e ⁇ di ⁇ in ele ⁇ v ⁇ dyaschee s ⁇ s ⁇ yanie, In all of
  • Example 2 The method implements the general scheme described in Example 1.
  • the size is 5x5x0.4 mm by the method of magnetic spraying, a layer of lanthanum is applied at a thickness of 50 mm, with a thickness of 2 mm.
  • the direct energy of the displacement of the hydrogen atoms in the lanthanum hydride and the oxygen atoms in the oxides of acid in the presence of available data is not available.
  • the separation of the energy of the displacement of the hydrogen and the acid, which is required for their selective removal, is separated for the separate.
  • electrons were selected. For this, an electronic gun was used, which accelerated the voltage at a rate of 40 to 200 kE ⁇ .
  • a layer of Co 3 0 4 with a thickness of 40 nm and another protective layer of ⁇ 0 with a thickness of 10 nm was applied.
  • the structured structure was irradiated after one template 6 with a given pattern of beam with energy of 1.5 channel for 90 minutes.
  • the irradiated parts of the SIU due to the selective removal of the oxygen atoms were transformed in Si, i.e. in them, a change in properties from dielectrical to output has occurred.
  • C o 3 0 4 in the irrelevant areas due to the removal of the oxygen atoms, the transition from 13 non-magnetic states in the magnetic field due to the decrease of ⁇ 3 0 4 to the metallic temperature.
  • EXAMPLE 4 The method was generally indicated in Example 2. As a first step, a layer of 30 nm thick was applied, and it was not thicker than 50 nm. Then, through the template, we received 6 concurrent and non-conforming responses (for example, as shown in Fig. 2).
  • Example 5 The method was generally indicated in Example 1.
  • the first layer was applied with a value of 3 0 with a thickness of 50 nm, and with a negligible frequency of 50 nm.
  • the structure was exposed through a template of 6 straightforward interventions with a bundle of energy 2.5 14 ka ⁇ for 2 hours.
  • irregular portions of the product result in the selective removal of oxygen from the product, resulting in a slight increase in the value of properties from the dielectrics have changed in the output.
  • the conversion from nickel oxide to pure nickel also occurred, in this case from an optically purely significant increase in the case of a significant increase in
  • EXAMPLE 6 The method was carried out in accordance with the general scheme described above. On the back of the blanket, a layer ⁇ ⁇ of 3 thickness of 10 nm was applied, and the cover is not covered by a protective layer of carbon film with a thickness of 5 nm. The resulting structure was irradiated through a template of 6 arrays of helium, which was obtained by neutralizing elec- trons of helium with energies of 1.5 energy. The irradiation was carried out for 15 minutes, as a result of which, in the case of irreversible events, the oxidative removal of the acid was carried out by selective removal of the acid. For these parameters, a bunch of helium atoms in a protective layer of diamond-like film did not result in significant changes in properties.
  • the intentional use of the invention is notably the most successful and most successful in the case of industrial and industrial use. 15 manufacturing technology of many components for general use and / or integrated systems.

Abstract

L'invention appartient au domaine de la micro-électronique et concerne notamment la formation de supports d'enregistrement et de stockage d'informations, les technologies de fabrication d'instruments à composants multiples utilisant un substrat commun et/ou de circuits intégrés. Le procédé de l'invention est destiné à permettre la formation sur un substrat unique de structures à composants multiples dont les éléments se distinguent par leurs propriétés de conductivité et leurs propriétés magnétiques, optiques ou autres propriétés physiques, et qui sont utilisées dans des divers instruments. Le procédé consiste à appliquer une par une des couches d'une substance et de modifier selon un motif prédéterminé les propriétés de la substance dans la couche appliquée par l'enlèvement d'atomes lors de l'irradiation de la couche appliquée au moyen d'un faisceau de particules accélérées. Dans chaque couche, on enlève sélectivement les atomes d'un type prédéterminé. L'épaisseur de toutes les couches appliquées et de chaque couche isolée est inférieure ou égale à la longueur de course linéaire des particules accélérées du faisceau.
PCT/RU2002/000332 2001-07-16 2002-07-12 Procede de formation d'une structure a couches multiples a parametres predetermines WO2003009359A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
RU2001119429 2001-07-16
RU2001119429 2001-07-16

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WO2003009359A1 true WO2003009359A1 (fr) 2003-01-30

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5459098A (en) * 1992-10-19 1995-10-17 Marietta Energy Systems, Inc. Maskless laser writing of microscopic metallic interconnects
WO1999045582A1 (fr) * 1998-01-28 1999-09-10 Thin Film Electronics Asa Generation et effacement de structures tridimensionnelles electroconductrices ou semi-conductrices
US6218278B1 (en) * 1998-05-22 2001-04-17 Obschestvo s ogranichennoi otvetstvennostju “Laboratoria Ionnykh Nanotekhnology” Method of forming a conducting structure

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5459098A (en) * 1992-10-19 1995-10-17 Marietta Energy Systems, Inc. Maskless laser writing of microscopic metallic interconnects
WO1999045582A1 (fr) * 1998-01-28 1999-09-10 Thin Film Electronics Asa Generation et effacement de structures tridimensionnelles electroconductrices ou semi-conductrices
US6218278B1 (en) * 1998-05-22 2001-04-17 Obschestvo s ogranichennoi otvetstvennostju “Laboratoria Ionnykh Nanotekhnology” Method of forming a conducting structure

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