WO2003003982A3 - Nanoparticules electroluminescentes et procede de production correspondant - Google Patents

Nanoparticules electroluminescentes et procede de production correspondant Download PDF

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Publication number
WO2003003982A3
WO2003003982A3 PCT/US2002/021076 US0221076W WO03003982A3 WO 2003003982 A3 WO2003003982 A3 WO 2003003982A3 US 0221076 W US0221076 W US 0221076W WO 03003982 A3 WO03003982 A3 WO 03003982A3
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WO
WIPO (PCT)
Prior art keywords
light
making same
emitting nanoparticles
passivated
tunable
Prior art date
Application number
PCT/US2002/021076
Other languages
English (en)
Other versions
WO2003003982A2 (fr
Inventor
Brian A Korgel
Keith P Johnston
Original Assignee
Univ Texas
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/109,608 external-priority patent/US6918946B2/en
Priority claimed from US10/109,578 external-priority patent/US6846565B2/en
Application filed by Univ Texas filed Critical Univ Texas
Priority to AU2002320252A priority Critical patent/AU2002320252A1/en
Publication of WO2003003982A2 publication Critical patent/WO2003003982A2/fr
Publication of WO2003003982A3 publication Critical patent/WO2003003982A3/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02601—Nanoparticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/34—Materials of the light emitting region containing only elements of group IV of the periodic system
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H01L33/18—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/701—Organic molecular electronic devices

Abstract

Cette invention porte sur un procédé de production d'une nanoparticule passivée cristalline, chimiquement stable et robuste ainsi que d'une composition renfermant ces nanoparticules, lesquelles émettent la lumière de manière très efficace, la couleur de la lumière émise par les paticules étant réglable en taille et en énergie d'excitation. Les procédés de la présente invention comprennent la dégradation thermique d'une molécule-précurseur en présence d'un agent de coiffage à haute température et à pression élevée. Une composition particulière préparée au moyen de ces procédés est une composition de nanoparticules de silicium passivées présentant des transitions optiques discrètes.
PCT/US2002/021076 2001-07-02 2002-07-02 Nanoparticules electroluminescentes et procede de production correspondant WO2003003982A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2002320252A AU2002320252A1 (en) 2001-07-02 2002-07-02 Light-emitting nanoparticles and method of making same

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US30259401P 2001-07-02 2001-07-02
US60/302,594 2001-07-02
US10/109,578 2002-03-28
US10/109,608 2002-03-28
US10/109,608 US6918946B2 (en) 2001-07-02 2002-03-28 Applications of light-emitting nanoparticles
US10/109,578 US6846565B2 (en) 2001-07-02 2002-03-28 Light-emitting nanoparticles and method of making same

Publications (2)

Publication Number Publication Date
WO2003003982A2 WO2003003982A2 (fr) 2003-01-16
WO2003003982A3 true WO2003003982A3 (fr) 2003-07-10

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/021076 WO2003003982A2 (fr) 2001-07-02 2002-07-02 Nanoparticules electroluminescentes et procede de production correspondant

Country Status (2)

Country Link
AU (1) AU2002320252A1 (fr)
WO (1) WO2003003982A2 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2411661B (en) * 2002-04-09 2005-11-09 Ngimat Co Variable capacitors, composite materials
US7273643B2 (en) 2003-06-24 2007-09-25 Eastman Kodak Company Article having multiple spectral deposits
ATE431620T1 (de) 2004-03-18 2009-05-15 Fiat Ricerche Leuchtelement, das eine dreidimensionale perkolationsschicht verwendet, und herstellungsverfahren dafür
US7777233B2 (en) * 2007-10-30 2010-08-17 Eastman Kodak Company Device containing non-blinking quantum dots
US11202888B2 (en) 2017-12-03 2021-12-21 Cook Medical Technologies Llc MRI compatible interventional wireguide

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997014176A1 (fr) * 1995-09-29 1997-04-17 Midwest Research Institute Suspension colloidale de nanoparticules semi-conductrices
WO1999037832A1 (fr) * 1998-01-27 1999-07-29 Midwest Research Institute Synthese de solutions de nanoparticules de chalcogenures metalliques melangees et depot par pulverisation de films precurseurs
US6159620A (en) * 1997-03-31 2000-12-12 The Regents Of The University Of California Single-electron solid state electronic device
WO2001007689A2 (fr) * 1999-07-26 2001-02-01 Massachusetts Institute Of Technology Materiaux nanocrystallins contenant du tellure
WO2001014250A2 (fr) * 1999-08-23 2001-03-01 University Of Hawaii Synthese de nanoparticules de silicium, nanoparticules de silicium a centre metallique, et applications associees
WO2001031374A1 (fr) * 1999-10-22 2001-05-03 The Board Of Trustees Of The University Of Illinois Dispositifs d'emission stimules par des nanoparticules de silicium
WO2001038222A1 (fr) * 1999-10-22 2001-05-31 The Board Of Trustees Of The University Of Illinois Nanoparticule de silicium et son procede de production
US20010002275A1 (en) * 1997-03-12 2001-05-31 Oldenburg Steven J. Metal nanoshells
US6306736B1 (en) * 2000-02-04 2001-10-23 The Regents Of The University Of California Process for forming shaped group III-V semiconductor nanocrystals, and product formed using process
US20020011564A1 (en) * 2000-07-26 2002-01-31 Norris David J. Method for manufacturing high-quality manganese-doped semiconductor nanocrystals

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997014176A1 (fr) * 1995-09-29 1997-04-17 Midwest Research Institute Suspension colloidale de nanoparticules semi-conductrices
US20010002275A1 (en) * 1997-03-12 2001-05-31 Oldenburg Steven J. Metal nanoshells
US6159620A (en) * 1997-03-31 2000-12-12 The Regents Of The University Of California Single-electron solid state electronic device
WO1999037832A1 (fr) * 1998-01-27 1999-07-29 Midwest Research Institute Synthese de solutions de nanoparticules de chalcogenures metalliques melangees et depot par pulverisation de films precurseurs
WO2001007689A2 (fr) * 1999-07-26 2001-02-01 Massachusetts Institute Of Technology Materiaux nanocrystallins contenant du tellure
WO2001014250A2 (fr) * 1999-08-23 2001-03-01 University Of Hawaii Synthese de nanoparticules de silicium, nanoparticules de silicium a centre metallique, et applications associees
WO2001031374A1 (fr) * 1999-10-22 2001-05-03 The Board Of Trustees Of The University Of Illinois Dispositifs d'emission stimules par des nanoparticules de silicium
WO2001038222A1 (fr) * 1999-10-22 2001-05-31 The Board Of Trustees Of The University Of Illinois Nanoparticule de silicium et son procede de production
US6306736B1 (en) * 2000-02-04 2001-10-23 The Regents Of The University Of California Process for forming shaped group III-V semiconductor nanocrystals, and product formed using process
US20020011564A1 (en) * 2000-07-26 2002-01-31 Norris David J. Method for manufacturing high-quality manganese-doped semiconductor nanocrystals

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
BELOMOIN G ET AL: "OXIDE AND HYDROGEN CAPPED ULTRASMALL BLUE LUMINESCENT SI NANOPARTICLES", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 77, no. 6, 7 August 2000 (2000-08-07), pages 779 - 781, XP000956835, ISSN: 0003-6951 *
THIMMAIAH S ET AL: "A SOLVOTHERMAL ROUTE TO CAPPED NANOPARTICLES OF GAMMA-FE203 AND COFE2O4", JOURNAL OF MATERIALS CHEMISTRY, THE ROYAL SOCIETY OF CHEMISTRY, CAMBRIDGE, GB, vol. 11, 2001, pages 3215 - 3221, XP001095906, ISSN: 0959-9428 *

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AU2002320252A1 (en) 2003-01-21
WO2003003982A2 (fr) 2003-01-16

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