WO2002095810A1 - Procede de reparation de defauts de dispositifs electroniques moleculaires - Google Patents

Procede de reparation de defauts de dispositifs electroniques moleculaires Download PDF

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Publication number
WO2002095810A1
WO2002095810A1 PCT/US2002/016321 US0216321W WO02095810A1 WO 2002095810 A1 WO2002095810 A1 WO 2002095810A1 US 0216321 W US0216321 W US 0216321W WO 02095810 A1 WO02095810 A1 WO 02095810A1
Authority
WO
WIPO (PCT)
Prior art keywords
defects
repairing
conductive substrate
molecular layer
adsorbed
Prior art date
Application number
PCT/US2002/016321
Other languages
English (en)
Inventor
Thomas E. Mallouk
David L. Allara
David M. Kaschak
Original Assignee
Molecular Electronics Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Molecular Electronics Corporation filed Critical Molecular Electronics Corporation
Publication of WO2002095810A1 publication Critical patent/WO2002095810A1/fr

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • C09D5/44—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes for electrophoretic applications
    • C09D5/4476—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes for electrophoretic applications comprising polymerisation in situ
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change

Definitions

  • the invention relates generally to molecular electronic devices encompassing
  • optical, alternate logic, and molecular memory devices and, more particularly, to
  • Molecular electronic devices usually contain very thin films of organic or
  • this technology may
  • a molecular memory or logic device incorporates molecules or polymers that
  • metal substrates are those typically used in electronics, including copper, gold,
  • conductive substrates include doped semiconductors (n-type or p-type silicon,
  • polysilicon amorphous silicon, gallium arsenide, gallium arsenide phosphide,
  • germanium germanium and conducting polymers (such as poly(pyrrole), poly(aniline), and
  • poly(thiophene) poly(thiophene)
  • NDR negative differential resistance
  • molecules include oligophenyleneethynylene derivatives (J. Chen, M.A. Reed,
  • NDR molecules molecules that include transistor
  • the present invention comprises alternative methods for filling, repairing, or
  • nanometers in thickness in the class of chemically bonded or attached
  • the organic layer is typically thinner than it is in well ordered
  • the molecular layers may be self-assembled monolayers ("SAMs") and other molecules
  • poly(thiophene) and semiconducting polymers (such as poly(phenylenevinylene)
  • metal-cyanide networks metallocenes, metalloporphyrins, and
  • metallopthalocyanines inorganic nanoparticle films (in particular metal or carbon
  • nanoparticles particles of semiconducting oxides such as ⁇ O2, ZnO, or Sn0 2 ,
  • chalcogenides such as CdSe, CdTe, MoS 2/ and WS 2 ), or multilayers of molecules
  • methods include, as treatment of the surface of the molecular layer,
  • a soluble molecule is electrochemically oxidized or
  • the current will be at 0.1% or less of its peak value.
  • organic monolayers typically about
  • adsorbed organic polymer layers typically between about 0.5 to about 4.0 nanometers in thickness, and most preferably between about 0.7 and about 3.0 nanometers), adsorbed organic polymer layers (typically between about 0.5
  • organic molecules typically from about 0.3 to about 100.0 nanometers in thickness
  • the thiol-bound NDR molecules were
  • aniline and aminonaphthalene derivatives and preferentially aromatic amines in which the aromatic ring contains at least one other electron-donating group such as
  • amino, hydroxy, or alkoxy can be electrochemically oxidized within the pinholes of
  • 1, 2-diaminobenzene in particular is known to have a surface reaction and to be
  • aniline and aminonaphthalene derivatives and preferentially aromatic
  • aniline and aminonaphthalene derivatives and preferentially aromatic amines in
  • preferred polymer precursors are oxidized at potentials lower than or equal to
  • Electro-oxidation forms a cross-linked polymer that is very insoluble in
  • preferred polymer precursors include aromatic amines, aromatic alcohols, N-alkyl
  • the molecular layer can be used. These include free radical polymerizations as well.
  • UPD underpotential deposition
  • a self-limiting thin film of a metal or metal oxide on a different metal can be
  • underpotentially deposited material can act as a hydrophilic attachment site for
  • a UPD layer of copper on Au can be used to enhance the adhesion of molecules containing phosphonate groups, such as
  • the adsorption is accomplished by soaking the gold
  • the coated substrate is immersed in an
  • Insulated metal oxides that can be deposited in this way are those that
  • metal ions that are soluble at low pH (including Fe 3+ , Fe 2+ , Al 3+ , Zr 4"1" ,
  • Co 2+ , Ni 2+ , and Zn 2+ form insoluble oxides or hydroxides at higher pH.
  • Polymers that can be deposited in this way include poly(amines), such as
  • the present method can be used as a diagnostic of film quality, since the
  • electropolymerized deposits are typically thicker than the self-assembled monolayer
  • AFM atomic force microscopy
  • electrochemical cell which also contains a platinum auxiliary electrode and a
  • SCE saturated calomel electrode
  • the working electrode is then returned to 0.0 V and removed from the
  • the electrochemically generated polymer is preferentially
  • electropolymerization is used to repair monolayer pinholes
  • oligophenyleneethynylene is adsorbed to a gold surface. The adsorption is
  • the precursor is preferably a molecule, such as an easily
  • the potential of the electrode can held for
  • Figure 1 (bottom graph) compares blockage of Faradaic current from
  • Amine functionality can be introduced at defects in the molecular or
  • epoxy cross-linkers preferentially bind to the amine groups, which
  • the electrode is removed from the solution and rinsed several times with acetonitrile or dichloromethane to remove
  • substrates can involve spontaneous surface-catalyzed reactions.
  • Prior art techniques can involve spontaneous surface-catalyzed reactions.
  • polymethylene is surface-catalyzed after a thin organic layer, such as a
  • SAM or adsorbed polymer film has been deposited onto a metal surface, as
  • diazomethane such as fluorinated or alkyl-containing derivatives of
  • the metal surface could be used.
  • the molecule is introduced from the
  • SSG Surface Sol-Gel synthesis
  • SSG involves a series of chemical
  • a second compound such as water or hydrogen sulfide
  • inorganic material in layer-by-layer fashion.
  • the technique is generally useful for
  • SSG is used in an entirely new way to fill the voids
  • present method include the aforementioned sulfides and oxides, sulfide, fluorides,
  • Preferred oxides include silicon oxide,
  • tantalum oxide zirconium oxide, hafnium oxide, and aluminum oxide.
  • nitrides fluorides, oxynitrides, for example, by
  • Defects in thin molecular films may also be accomplished in accordance with
  • these are molecules that contain a surface ligating group, such as a
  • Monolayer exchange may be utilized, for example, to fill voids in the device
  • a molecule that forms a crystalline self-assembled monolayer such as
  • the capping can be done either by the surface sol-gel process described above
  • the evaporated top metal is coordinated by
  • Examples include SAM-forming molecules (thiols, thioacetates,
  • the terminal group can act as point of oxidative displacement
  • phase metal atoms (M') to nucleate the growth a top metallized structure that can be represented as (M S urf)-S(CH 2 ) n (M')mX, where (M') m is a single or multiple layer of
  • COOH COOH or hydroxamate
  • ligating group such as an amine, alcohol
  • silanol, phosphate, or phosphonate to either act as a point of attachment for an
  • inorganic oxide grown by the surface sol-gel method or to function as an attachment
  • a surface (M SU rf)-S(CH 2 )nCOOH can be any surface (M SU rf)-S(CH 2 )nCOOH.
  • M'(OR) n is a sol-gel
  • tantalum ethoxide or titanium isopropoxide or more generally

Abstract

Cette invention porte sur des procédés de réparation ou de prévention de défauts dans des dispositifs électroniques moléculaires tels que des dispositifs optiques, des dispositifs logiques d'alternance ainsi que des dispositifs à mémoire moléculaire. Ces procédés font appel à l'électropolymérisation de polymères isolants, à la polymérisation de surface de catalyse de matériaux isolants et au remplissage par procédé sol-gel de surface de cavités.
PCT/US2002/016321 2001-05-21 2002-05-21 Procede de reparation de defauts de dispositifs electroniques moleculaires WO2002095810A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US29274901P 2001-05-21 2001-05-21
US60/292,749 2001-05-21

Publications (1)

Publication Number Publication Date
WO2002095810A1 true WO2002095810A1 (fr) 2002-11-28

Family

ID=23126017

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Application Number Title Priority Date Filing Date
PCT/US2002/016321 WO2002095810A1 (fr) 2001-05-21 2002-05-21 Procede de reparation de defauts de dispositifs electroniques moleculaires

Country Status (1)

Country Link
WO (1) WO2002095810A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006004953A2 (fr) * 2004-06-30 2006-01-12 Hewlett-Packard Development Company L.P. Procede permettant de former une couche moleculaire auto-assemblee
CN103137647A (zh) * 2011-11-30 2013-06-05 株式会社东芝 有机分子存储器和用于有机分子存储器的有机分子
EP2909640A4 (fr) * 2012-10-19 2016-05-11 Prieto Battery Inc Détection de défauts dans des revêtements polymères solides

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5186813A (en) * 1990-12-17 1993-02-16 Ford Motor Company Deposition of electroactive polymers
US5277786A (en) * 1991-02-20 1994-01-11 Canon Kabushiki Kaisha Process for producing a defect-free photoelectric conversion device
US5320723A (en) * 1990-05-07 1994-06-14 Canon Kabushiki Kaisha Method of removing short-circuit portion in photoelectric conversion device
US5320736A (en) * 1991-01-11 1994-06-14 University Of Georgia Research Foundation Method to electrochemically deposit compound semiconductors
US6132585A (en) * 1992-07-01 2000-10-17 Canon Kabushiki Kaisha Semiconductor element and method and apparatus for fabricating the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5320723A (en) * 1990-05-07 1994-06-14 Canon Kabushiki Kaisha Method of removing short-circuit portion in photoelectric conversion device
US5186813A (en) * 1990-12-17 1993-02-16 Ford Motor Company Deposition of electroactive polymers
US5320736A (en) * 1991-01-11 1994-06-14 University Of Georgia Research Foundation Method to electrochemically deposit compound semiconductors
US5277786A (en) * 1991-02-20 1994-01-11 Canon Kabushiki Kaisha Process for producing a defect-free photoelectric conversion device
US6132585A (en) * 1992-07-01 2000-10-17 Canon Kabushiki Kaisha Semiconductor element and method and apparatus for fabricating the same

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006004953A2 (fr) * 2004-06-30 2006-01-12 Hewlett-Packard Development Company L.P. Procede permettant de former une couche moleculaire auto-assemblee
WO2006004953A3 (fr) * 2004-06-30 2006-08-31 Hewlett Packard Development Co Procede permettant de former une couche moleculaire auto-assemblee
US7709290B2 (en) 2004-06-30 2010-05-04 Hewlett-Packard Development Company, L.P. Method of forming a self-assembled molecular layer
US7964443B2 (en) 2004-06-30 2011-06-21 Hewlett-Packard Development Company, L.P. Method of forming a crossed wire molecular device including a self-assembled molecular layer
CN103137647A (zh) * 2011-11-30 2013-06-05 株式会社东芝 有机分子存储器和用于有机分子存储器的有机分子
CN103137647B (zh) * 2011-11-30 2016-02-10 株式会社东芝 有机分子存储器和用于有机分子存储器的有机分子
EP2909640A4 (fr) * 2012-10-19 2016-05-11 Prieto Battery Inc Détection de défauts dans des revêtements polymères solides
US9748609B2 (en) 2012-10-19 2017-08-29 Prieto Battery, Inc. Detection of defects in solid-polymer coatings using reduction-oxidation probes

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