WO2002094957A3 - Chemical mechanical polishing compositions and methods relating thereto - Google Patents

Chemical mechanical polishing compositions and methods relating thereto Download PDF

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Publication number
WO2002094957A3
WO2002094957A3 PCT/US2002/015825 US0215825W WO02094957A3 WO 2002094957 A3 WO2002094957 A3 WO 2002094957A3 US 0215825 W US0215825 W US 0215825W WO 02094957 A3 WO02094957 A3 WO 02094957A3
Authority
WO
WIPO (PCT)
Prior art keywords
metal
cmp
mechanical polishing
chemical mechanical
polishing compositions
Prior art date
Application number
PCT/US2002/015825
Other languages
French (fr)
Other versions
WO2002094957A2 (en
Inventor
Barry Weinstein
Tirthankar Ghosh
Original Assignee
Rodel Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rodel Inc filed Critical Rodel Inc
Priority to EP02736981A priority Critical patent/EP1399517A2/en
Priority to JP2002592420A priority patent/JP2005502188A/en
Priority to KR20037014999A priority patent/KR20040002972A/en
Publication of WO2002094957A2 publication Critical patent/WO2002094957A2/en
Publication of WO2002094957A3 publication Critical patent/WO2002094957A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

A polishing composition for removing metal by CMP comprises, a metal oxidizer, an oxide inhibitor, a complexing agent, and an engineered copolymer comprising, molecules of a first moiety having hydrophilic functional groups forming bonds with the metal, and molecules of a second moiety having hydrophobic functional groups that engage a polishing pad during CMP for the pad to remove the engineered copolymer from a surface of the metal, which enables removal of the metal by CMP while minimizing removal of the engineering copolymer from recessed circuit interconnects to minimize dishing.
PCT/US2002/015825 2001-05-18 2002-05-17 Chemical mechanical polishing compositions and methods relating thereto WO2002094957A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP02736981A EP1399517A2 (en) 2001-05-18 2002-05-17 Chemical mechanical polishing compositions and methods relating thereto
JP2002592420A JP2005502188A (en) 2001-05-18 2002-05-17 Chemical mechanical polishing composition and method related thereto
KR20037014999A KR20040002972A (en) 2001-05-18 2002-05-17 Chemical mechanical polishing compositions and methods relating thereto

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/860,933 2001-05-18
US09/860,933 US6632259B2 (en) 2001-05-18 2001-05-18 Chemical mechanical polishing compositions and methods relating thereto

Publications (2)

Publication Number Publication Date
WO2002094957A2 WO2002094957A2 (en) 2002-11-28
WO2002094957A3 true WO2002094957A3 (en) 2003-10-23

Family

ID=25334410

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/015825 WO2002094957A2 (en) 2001-05-18 2002-05-17 Chemical mechanical polishing compositions and methods relating thereto

Country Status (7)

Country Link
US (4) US6632259B2 (en)
EP (1) EP1399517A2 (en)
JP (1) JP2005502188A (en)
KR (1) KR20040002972A (en)
CN (1) CN1261511C (en)
TW (1) TWI241328B (en)
WO (1) WO2002094957A2 (en)

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US6821897B2 (en) * 2001-12-05 2004-11-23 Cabot Microelectronics Corporation Method for copper CMP using polymeric complexing agents
US7004819B2 (en) * 2002-01-18 2006-02-28 Cabot Microelectronics Corporation CMP systems and methods utilizing amine-containing polymers
US20040092102A1 (en) * 2002-11-12 2004-05-13 Sachem, Inc. Chemical mechanical polishing composition and method
US6803353B2 (en) * 2002-11-12 2004-10-12 Atofina Chemicals, Inc. Copper chemical mechanical polishing solutions using sulfonated amphiprotic agents
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US7387970B2 (en) * 2003-05-07 2008-06-17 Freescale Semiconductor, Inc. Method of using an aqueous solution and composition thereof
SG168412A1 (en) * 2003-06-03 2011-02-28 Nexplanar Corp Synthesis of a functionally graded pad for chemical mechanical planarization
US7247566B2 (en) * 2003-10-23 2007-07-24 Dupont Air Products Nanomaterials Llc CMP method for copper, tungsten, titanium, polysilicon, and other substrates using organosulfonic acids as oxidizers
US20050104048A1 (en) * 2003-11-13 2005-05-19 Thomas Terence M. Compositions and methods for polishing copper
KR100583118B1 (en) * 2003-12-19 2006-05-23 주식회사 하이닉스반도체 Method for Forming Capacitor of Semiconductor Device
US7497967B2 (en) * 2004-03-24 2009-03-03 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Compositions and methods for polishing copper
US7303993B2 (en) * 2004-07-01 2007-12-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
US7384871B2 (en) * 2004-07-01 2008-06-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
CN102585765B (en) * 2004-07-23 2015-01-21 日立化成株式会社 Cmp polishing agent and method for polishing substrate
US7086935B2 (en) * 2004-11-24 2006-08-08 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Cellulose-containing polishing compositions and methods relating thereto
US7435356B2 (en) * 2004-11-24 2008-10-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Abrasive-free chemical mechanical polishing compositions and methods relating thereto
US7311856B2 (en) * 2005-03-30 2007-12-25 Cabot Microelectronics Corporation Polymeric inhibitors for enhanced planarization
US7939482B2 (en) * 2005-05-25 2011-05-10 Freescale Semiconductor, Inc. Cleaning solution for a semiconductor wafer
CN1900146B (en) * 2005-07-21 2012-02-29 安集微电子（上海）有限公司 Chemical and mechanical polishing liquid
WO2007038399A2 (en) * 2005-09-26 2007-04-05 Cabot Microelectronics Corporation Metal cations for initiating chemical mechanical polishing
US20070075042A1 (en) * 2005-10-05 2007-04-05 Siddiqui Junaid A Stabilizer-Fenton's reaction metal-vinyl pyridine polymer-surface-modified chemical mechanical planarization composition and associated method
KR100786949B1 (en) 2005-12-08 2007-12-17 주식회사 엘지화학 Adjuvant capable of controlling a polishing selectivity and chemical mechanical polishing slurry comprising the same
KR101260597B1 (en) * 2005-12-27 2013-05-06 히타치가세이가부시끼가이샤 Metal polishing liquid and method for polishing film to be polished
EP1813641B1 (en) * 2006-01-30 2016-12-14 Imec A method for improving mechanical properties of polymer particles and its applications
JP4985409B2 (en) * 2006-01-31 2012-07-25 日立化成工業株式会社 CMP polishing agent for polishing insulating film, polishing method, and semiconductor electronic component polished by the polishing method
US7824568B2 (en) * 2006-08-17 2010-11-02 International Business Machines Corporation Solution for forming polishing slurry, polishing slurry and related methods
US20100273330A1 (en) * 2006-08-23 2010-10-28 Citibank N.A. As Collateral Agent Rinse formulation for use in the manufacture of an integrated circuit
US7892071B2 (en) * 2006-09-29 2011-02-22 Depuy Products, Inc. Orthopaedic component manufacturing method and equipment
KR101396055B1 (en) * 2007-07-05 2014-05-15 히타치가세이가부시끼가이샤 Polishing liquid for metal film and polishing method
KR100949250B1 (en) 2007-10-10 2010-03-25 제일모직주식회사 Metal CMP slurry compositions and polishing method using the same
JP2009123880A (en) 2007-11-14 2009-06-04 Showa Denko Kk Polishing composition
US20090215266A1 (en) * 2008-02-22 2009-08-27 Thomas Terence M Polishing Copper-Containing patterned wafers
WO2009128430A1 (en) 2008-04-15 2009-10-22 日立化成工業株式会社 Polishing solution for metal films and polishing method using the same
US8540893B2 (en) * 2008-08-04 2013-09-24 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and methods relating thereto
CN102245724A (en) * 2008-12-19 2011-11-16 安集微电子（上海）有限公司 Chemical-mechanical polishing liquid
JP5940270B2 (en) * 2010-12-09 2016-06-29 花王株式会社 Polishing liquid composition
US8440097B2 (en) 2011-03-03 2013-05-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stable, concentratable, water soluble cellulose free chemical mechanical polishing composition
US8435896B2 (en) 2011-03-03 2013-05-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stable, concentratable chemical mechanical polishing composition and methods relating thereto
JP6425303B2 (en) * 2014-10-27 2018-11-21 花王株式会社 Polishing liquid composition
US10253216B2 (en) 2016-07-01 2019-04-09 Versum Materials Us, Llc Additives for barrier chemical mechanical planarization
US10600655B2 (en) 2017-08-10 2020-03-24 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for tungsten
CN115011258A (en) * 2022-07-20 2022-09-06 黄河三角洲京博化工研究院有限公司 Double-component polishing solution, preparation method thereof and silicon wafer polishing method

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WO1999064527A1 (en) * 1998-06-10 1999-12-16 Rodel Holdings, Inc. Composition and method for polishing in metal cmp
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WO1999064527A1 (en) * 1998-06-10 1999-12-16 Rodel Holdings, Inc. Composition and method for polishing in metal cmp
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Also Published As

Publication number Publication date
US20030013386A1 (en) 2003-01-16
CN1509322A (en) 2004-06-30
EP1399517A2 (en) 2004-03-24
TWI241328B (en) 2005-10-11
US7300874B2 (en) 2007-11-27
CN1261511C (en) 2006-06-28
US20040065020A1 (en) 2004-04-08
US20030032371A1 (en) 2003-02-13
JP2005502188A (en) 2005-01-20
US6632259B2 (en) 2003-10-14
WO2002094957A2 (en) 2002-11-28
US6902590B2 (en) 2005-06-07
US20050159003A1 (en) 2005-07-21
KR20040002972A (en) 2004-01-07

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