WO2002086932A1 - Magnetic mirror plasma source - Google Patents
Magnetic mirror plasma source Download PDFInfo
- Publication number
- WO2002086932A1 WO2002086932A1 PCT/US2002/011542 US0211542W WO02086932A1 WO 2002086932 A1 WO2002086932 A1 WO 2002086932A1 US 0211542 W US0211542 W US 0211542W WO 02086932 A1 WO02086932 A1 WO 02086932A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- magnetic field
- plasma
- field
- gap
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/08—Ion sources; Ion guns using arc discharge
- H01J27/14—Other arc discharge ion sources using an applied magnetic field
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
- H01J37/32761—Continuous moving
- H01J37/3277—Continuous moving of continuous material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/02—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma
- H05H1/10—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma using externally-applied magnetic fields only, e.g. Q-machines, Yin-Yang, base-ball
- H05H1/14—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma using externally-applied magnetic fields only, e.g. Q-machines, Yin-Yang, base-ball wherein the containment vessel is straight and has magnetic mirrors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Optics & Photonics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Combustion & Propulsion (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- ing And Chemical Polishing (AREA)
- Carbon And Carbon Compounds (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002584354A JP4264475B2 (en) | 2001-04-20 | 2002-04-10 | Magnetic mirror plasma source |
AT02723836T ATE536627T1 (en) | 2001-04-20 | 2002-04-10 | MAGNETIC MIRROR PLASMA SOURCE |
EP02723836A EP1388159B1 (en) | 2001-04-20 | 2002-04-10 | Magnetic mirror plasma source |
US10/475,546 US6911779B2 (en) | 2001-04-20 | 2002-04-10 | Magnetic mirror plasma source |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US28536001P | 2001-04-20 | 2001-04-20 | |
US28536401P | 2001-04-20 | 2001-04-20 | |
US28536101P | 2001-04-20 | 2001-04-20 | |
US60/285,361 | 2001-04-20 | ||
US60/285,360 | 2001-04-20 | ||
US60/285,364 | 2001-04-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2002086932A1 true WO2002086932A1 (en) | 2002-10-31 |
WO2002086932B1 WO2002086932B1 (en) | 2002-12-19 |
Family
ID=27403524
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2002/011473 WO2002086185A1 (en) | 2001-04-20 | 2002-04-10 | Penning discharge plasma source |
PCT/US2002/011542 WO2002086932A1 (en) | 2001-04-20 | 2002-04-10 | Magnetic mirror plasma source |
PCT/US2002/011541 WO2002086937A1 (en) | 2001-04-20 | 2002-04-10 | Dipole ion source |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2002/011473 WO2002086185A1 (en) | 2001-04-20 | 2002-04-10 | Penning discharge plasma source |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2002/011541 WO2002086937A1 (en) | 2001-04-20 | 2002-04-10 | Dipole ion source |
Country Status (6)
Country | Link |
---|---|
US (1) | US6911779B2 (en) |
EP (3) | EP1388159B1 (en) |
JP (3) | JP4264475B2 (en) |
AT (3) | ATE536628T1 (en) |
DE (1) | DE60238979D1 (en) |
WO (3) | WO2002086185A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2482219C2 (en) * | 2008-11-05 | 2013-05-20 | Улвак, Инк. | Vacuumised coiling device |
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US7294283B2 (en) * | 2001-04-20 | 2007-11-13 | Applied Process Technologies, Inc. | Penning discharge plasma source |
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WO2004027825A2 (en) * | 2002-09-19 | 2004-04-01 | Applied Process Technologies, Inc. | Beam plasma source |
US7411352B2 (en) * | 2002-09-19 | 2008-08-12 | Applied Process Technologies, Inc. | Dual plasma beam sources and method |
US7259378B2 (en) * | 2003-04-10 | 2007-08-21 | Applied Process Technologies, Inc. | Closed drift ion source |
WO2005028697A1 (en) * | 2003-09-12 | 2005-03-31 | Applied Process Technologies, Inc. | Magnetic mirror plasma source and method using same |
DE102004043967B4 (en) * | 2004-09-11 | 2010-01-07 | Roth & Rau Ag | Arrangement and method for plasma treatment of a substrate |
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JP2006351374A (en) * | 2005-06-16 | 2006-12-28 | Jeol Ltd | Ion source |
JP2009530775A (en) * | 2006-03-17 | 2009-08-27 | ジェネラル・プラズマ・インコーポレーテッド | Mirror magnetron plasma source |
KR101358551B1 (en) * | 2006-08-16 | 2014-02-05 | 블라디미르 쉬리포브 | Method of ion beam treatment of dielectric surface and device for implementing this method |
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JP5230185B2 (en) * | 2007-12-13 | 2013-07-10 | 富士フイルム株式会社 | Reactive sputtering apparatus and reactive sputtering method |
EP2368257A4 (en) * | 2008-12-08 | 2016-03-09 | Gen Plasma Inc | Closed drift magnetic field ion source apparatus containing self-cleaning anode and a process for substrate modification therewith |
US9545360B2 (en) | 2009-05-13 | 2017-01-17 | Sio2 Medical Products, Inc. | Saccharide protective coating for pharmaceutical package |
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-
2002
- 2002-04-10 WO PCT/US2002/011473 patent/WO2002086185A1/en active Search and Examination
- 2002-04-10 EP EP02723836A patent/EP1388159B1/en not_active Expired - Lifetime
- 2002-04-10 EP EP02723835A patent/EP1390964B1/en not_active Expired - Lifetime
- 2002-04-10 DE DE60238979T patent/DE60238979D1/en not_active Expired - Lifetime
- 2002-04-10 US US10/475,546 patent/US6911779B2/en not_active Expired - Lifetime
- 2002-04-10 AT AT02723835T patent/ATE536628T1/en active
- 2002-04-10 WO PCT/US2002/011542 patent/WO2002086932A1/en active Application Filing
- 2002-04-10 WO PCT/US2002/011541 patent/WO2002086937A1/en active Search and Examination
- 2002-04-10 AT AT02764187T patent/ATE496388T1/en not_active IP Right Cessation
- 2002-04-10 JP JP2002584354A patent/JP4264475B2/en not_active Expired - Fee Related
- 2002-04-10 JP JP2002583695A patent/JP4264474B2/en not_active Expired - Fee Related
- 2002-04-10 JP JP2002584359A patent/JP4339597B2/en not_active Expired - Fee Related
- 2002-04-10 AT AT02723836T patent/ATE536627T1/en active
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Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6103074A (en) * | 1998-02-14 | 2000-08-15 | Phygen, Inc. | Cathode arc vapor deposition method and apparatus |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2482219C2 (en) * | 2008-11-05 | 2013-05-20 | Улвак, Инк. | Vacuumised coiling device |
Also Published As
Publication number | Publication date |
---|---|
JP4339597B2 (en) | 2009-10-07 |
EP1390964A4 (en) | 2009-12-30 |
JP2005505891A (en) | 2005-02-24 |
EP1390964B1 (en) | 2011-12-07 |
EP1388159B1 (en) | 2011-12-07 |
JP2004537825A (en) | 2004-12-16 |
ATE536628T1 (en) | 2011-12-15 |
EP1390558A4 (en) | 2009-12-30 |
EP1388159A1 (en) | 2004-02-11 |
WO2002086932B1 (en) | 2002-12-19 |
US6911779B2 (en) | 2005-06-28 |
JP4264474B2 (en) | 2009-05-20 |
US20040155592A1 (en) | 2004-08-12 |
JP4264475B2 (en) | 2009-05-20 |
DE60238979D1 (en) | 2011-03-03 |
ATE536627T1 (en) | 2011-12-15 |
EP1390964A1 (en) | 2004-02-25 |
WO2002086937A1 (en) | 2002-10-31 |
EP1390558A1 (en) | 2004-02-25 |
WO2002086185A1 (en) | 2002-10-31 |
EP1388159A4 (en) | 2009-12-30 |
JP2005504880A (en) | 2005-02-17 |
ATE496388T1 (en) | 2011-02-15 |
EP1390558B1 (en) | 2011-01-19 |
WO2002086937B1 (en) | 2002-12-12 |
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