WO2002084785A1 - Nrd guide fm transmitter with fm modulator in rear of gunn oscillator - Google Patents

Nrd guide fm transmitter with fm modulator in rear of gunn oscillator Download PDF

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Publication number
WO2002084785A1
WO2002084785A1 PCT/KR2002/000117 KR0200117W WO02084785A1 WO 2002084785 A1 WO2002084785 A1 WO 2002084785A1 KR 0200117 W KR0200117 W KR 0200117W WO 02084785 A1 WO02084785 A1 WO 02084785A1
Authority
WO
WIPO (PCT)
Prior art keywords
teflon
transmitter
diode
illustrates
length
Prior art date
Application number
PCT/KR2002/000117
Other languages
French (fr)
Inventor
Cheon Woo Shin
Original Assignee
Nrdtech Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nrdtech Co., Ltd. filed Critical Nrdtech Co., Ltd.
Publication of WO2002084785A1 publication Critical patent/WO2002084785A1/en

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B9/00—Generation of oscillations using transit-time effects
    • H03B9/12—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P3/00—Waveguides; Transmission lines of the waveguide type
    • H01P3/12—Hollow waveguides
    • H01P3/123—Hollow waveguides with a complex or stepped cross-section, e.g. ridged or grooved waveguides
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03C—MODULATION
    • H03C3/00—Angle modulation
    • H03C3/10—Angle modulation by means of variable impedance
    • H03C3/12—Angle modulation by means of variable impedance by means of a variable reactive element
    • H03C3/22—Angle modulation by means of variable impedance by means of a variable reactive element the element being a semiconductor diode, e.g. varicap diode

Definitions

  • the present invention relates to a new type of an NRD Guide (Non-Radiative
  • Dielectric waveGuide FM transmitter that operates an FM modulator at the rear of an oscillation unit by constructing a NCO (Voltage-Controlled Oscillator) using a Naractor diode.
  • NCO Voltage-Controlled Oscillator
  • a millimeter wave integrated circuit, NRD Guide has characteristics such as the low loss and non-radiativeness, etc.
  • An NRD Guide circuit is constructed by maintaining the gap between the upper conducting plate and the lower conducting plate as a half wave length of the frequency to be used or shorter and by positioning a dielectric transmission line that has a certain constant width and the height which is the same as the gap between the upper conducting plate and the lower conducting plate.
  • Millimeter waves generated from a Gunn diode mount (6) on which a Gunn diode (14) is mounted are fed by a strip resonator (7).
  • the FM modulation is performed by using a NCO located at the rear of the oscillation unit and comprised of the front Teflon (8) which has the length of LI and a certain air gap (d), a high permittivity sheet (9), a Naractor diode mount (10) and the rear Teflon (12) that has the length of L2.
  • the present invention further comprises a mode l suppressor (5), an NRD Guide (3) and an antenna(4).
  • Figure 1 illustrates a perspective view of an FM modulation transmitter equipped with a NCO that includes a Naractor diode at the rear of the Gunn diode oscillation unit.
  • Figure 2 illustrates a top view of an FM modulation transmitter equipped with a NCO that includes a Naractor diode at the rear of the Gunn diode oscillation unit.
  • Figure 3 illustrates an enlarged top view of a Gunn diode oscillation unit and a NCO that includes a Naractor diode at the rear of the Gunn diode oscillation unit.
  • Figure 4 illustrates a perspective view of a Gunn diode mount that includes a Gunn diode.
  • Figure 5 illustrates a strip resonator for feeding millimeter waves oscillated at the Gunn diode to the ⁇ RD Guide.
  • Figure 6 illustrates a mode suppressor for suppressing the unnecessary mode generated when millimeter waves are fed.
  • Figure 7 illustrates enlarged views of a Naractor diode mount and the Naractor diode.
  • Figure 8 is a graph that illustrates frequency shift depending on air gap.
  • Figure 9 is a graph that illustrates change of usable frequency range depending on change of length of the front Teflon.
  • Figure 10 is a graph that illustrates change of usable frequency range depending on change of length of the rear Teflon.
  • Figure 11 is a graph that illustrates frequency modulation characteristics depending on air gap when the reverse bias voltage is applied to the Naractor diode where the NCO is placed at the rear of the oscillation unit.
  • Varactor Diode d Gap Between Strip Resonator and Front Teflon
  • Figure 1 illustrates a perspective view of an FM transmitter equipped with an oscillation unit, modulation unit and antenna between the upper conducting plate and the lower conducting plate (1,2).
  • the modulation unit comprises a Gunn diode mount (6) on which a Gunn diode (14) is mounted, a strip resonator (7) and a mode suppressor (5).
  • the modulation unit comprises the front Teflon (8), a piece of high permittivity sheet (9), a Naractor diode mount (10) and the rear Teflon (11). Modulated signals are fed to a rod antenna (4) through an ⁇ RD Guide (3) and radiated.
  • Figure 2 illustrates a top view of an FM modulation transmitter equipped with a VCO in the rear, according to the present invention.
  • FIG 3 illustrates an enlarged top view of the oscillation unit and the modulation unit.
  • the Gunn diode (14) is mounted on the Gunn diode mount (6) as illustrated in Figure 4.
  • the Gunn diode mount oscillates millimeter waves by applying bias through the bias choke (13).
  • the oscillated millimeter waves are supplied to the ⁇ RD Guide (3) using the dielectric substrate (7) that has permittivity of 2.56 and thickness of 0.3mm as illustrated in Figure 5. Also, the mode suppressor (5) is inserted for suppressing unnecessary mode that is generated when millimeter waves are fed.
  • the modulation unit is mounted with a certain air gap from the strip resonator
  • the air gap (d) plays a key role in determining frequency shift corresponding to the voltage at the time of the FM modulation.
  • Figure 8 illustrates the result of change of frequency shift depending on air gap (d). It is found that the frequency shift decreases as the air gap (d) increases.
  • the modulation unit is mounted upon selecting the appropriate level of frequency shift depending on the air gap.
  • the front Teflon (8), the high permittivity sheet (9), the Varactor diode mount (10) and the rear Teflon (11) are arranged in the order listed herein to construct the modulation unit.
  • the usable frequency range is determined depending on the lengths of the front Teflon (8) and the rear Teflon (11).
  • Figure 9 is a graph that illustrates frequency range change depending on the length of the front Teflon (8) under the condition that the voltage is 5 V, the thickness of the high permittivity sheet (9) is 0.135mm, the length of the rear Teflon (11) is 2.5mm and the air gap is 1.5mm.
  • the graph shows that the usable frequency range decreases as the length of the front Teflon (8) increases.
  • Figure 10 is a graph that illustrates frequency range change depending on the length of the rear Teflon (11) under the condition that the voltage is 5N the thickness of the high permittivity sheet is 0.135mm, the length of the front Teflon (8) is 1.2mm and the air gap is 1.5mm.
  • the usable frequency range is determined over the width of 1GHz corresponding to the length of the rear Teflon (11) around the usable frequency determined by the front Teflon (8).
  • the high permittivity sheet (9) is inserted for the impedance matching between the front Teflon (8) and the Varactor diode mount (10).
  • the thickness of the high permittivity sheet in a preferred embodiment of the present invention is 0.135mm.
  • the dielectric substrate (10) that has the permittivity of 2.56 and the thickness of 0.3mm is used and the Varactor diode named MA46H120 and manufactured by M/A Com is used.
  • the gap between the metal thin films on the part where the Varactor diode (17) is mounted is 0.3mm.
  • Metal thin films having the gap of 0.1mm may be used as well.
  • FIG. 11 is a graph that illustrates frequency change corresponding to voltage changes (ON 5N 10V) where the air gap is respectively
  • the frequency change of the FM transmitter that has the air gap of 1.5mm shows the highest linearity.
  • an FM transmitter may be downsized by providing an FM transmitter in the new shape according to the present invention and the mass production becomes possible because the fabrication process is made simple.
  • the FM transmitter according to the present invention may be used widely in various application fields such as radar, broadcasting, etc. due to the small size and the improved linearity and output characteristics of the FM transmitter.

Abstract

The present invention relates to an FM transmitter for the NRD guide equipped with a voltage control oscillator using a varactor diode in the rear part of the Gunn diode oscillator.

Description

NRD GUIDE FM TRANSMITTER WITH FM MODULATOR IN REAR OF GUNN OSCILLATOR
TECHNICAL FIELD The present invention relates to a new type of an NRD Guide (Non-Radiative
Dielectric waveGuide) FM transmitter that operates an FM modulator at the rear of an oscillation unit by constructing a NCO (Voltage-Controlled Oscillator) using a Naractor diode.
BACKGROUND ART
A millimeter wave integrated circuit, NRD Guide, has characteristics such as the low loss and non-radiativeness, etc.
An NRD Guide circuit is constructed by maintaining the gap between the upper conducting plate and the lower conducting plate as a half wave length of the frequency to be used or shorter and by positioning a dielectric transmission line that has a certain constant width and the height which is the same as the gap between the upper conducting plate and the lower conducting plate.
DISCLOSURE OF THE INVENTION Millimeter waves generated from a Gunn diode mount (6) on which a Gunn diode (14) is mounted are fed by a strip resonator (7). The FM modulation is performed by using a NCO located at the rear of the oscillation unit and comprised of the front Teflon (8) which has the length of LI and a certain air gap (d), a high permittivity sheet (9), a Naractor diode mount (10) and the rear Teflon (12) that has the length of L2. In order to transmit modulated signals, the present invention further comprises a mode l suppressor (5), an NRD Guide (3) and an antenna(4).
BRIEF DESCRIPTION OF THE DRAWINGS
Figure 1 illustrates a perspective view of an FM modulation transmitter equipped with a NCO that includes a Naractor diode at the rear of the Gunn diode oscillation unit.
Figure 2 illustrates a top view of an FM modulation transmitter equipped with a NCO that includes a Naractor diode at the rear of the Gunn diode oscillation unit. Figure 3 illustrates an enlarged top view of a Gunn diode oscillation unit and a NCO that includes a Naractor diode at the rear of the Gunn diode oscillation unit.
Figure 4 illustrates a perspective view of a Gunn diode mount that includes a Gunn diode.
Figure 5 illustrates a strip resonator for feeding millimeter waves oscillated at the Gunn diode to the ΝRD Guide. Figure 6 illustrates a mode suppressor for suppressing the unnecessary mode generated when millimeter waves are fed.
Figure 7 illustrates enlarged views of a Naractor diode mount and the Naractor diode.
Figure 8 is a graph that illustrates frequency shift depending on air gap. Figure 9 is a graph that illustrates change of usable frequency range depending on change of length of the front Teflon.
Figure 10 is a graph that illustrates change of usable frequency range depending on change of length of the rear Teflon.
Figure 11 is a graph that illustrates frequency modulation characteristics depending on air gap when the reverse bias voltage is applied to the Naractor diode where the NCO is placed at the rear of the oscillation unit.
**Description of the code at an important part of a diagram**
1 : Upper Conducting Plate 2: Lower Conducting Plate
3: ΝRD Guide
4: Rod Antenna
5: Mode Suppressor
6: Gunn Diode Mount 7: Strip Resonator
8: Front Teflon
9: High Permittivity Sheet
10: Naractor Diode Mount
11: Electric Wire (semi-rigid) for Supplying Reverse Bias Noltage to Naractor Diode
12: Rear Teflon
13: Choke Type Substrate for Supplying Bias to Positive Terminal of Gunn Diode
14: Gunn Diode 15: Thin Teflon
16: Metal (Copper) Thin Film
17: Varactor Diode d: Gap Between Strip Resonator and Front Teflon
LI: Thickness of Front Teflon L2: Thickness of Rear Teflon BEST MODE FOR CARRYING OUT THE INVENTION
Preferred embodiments of the present invention will now be explained in detail with references to the attached drawings. Figure 1 illustrates a perspective view of an FM transmitter equipped with an oscillation unit, modulation unit and antenna between the upper conducting plate and the lower conducting plate (1,2). The modulation unit comprises a Gunn diode mount (6) on which a Gunn diode (14) is mounted, a strip resonator (7) and a mode suppressor (5). The modulation unit comprises the front Teflon (8), a piece of high permittivity sheet (9), a Naractor diode mount (10) and the rear Teflon (11). Modulated signals are fed to a rod antenna (4) through an ΝRD Guide (3) and radiated.
Figure 2 illustrates a top view of an FM modulation transmitter equipped with a VCO in the rear, according to the present invention.
Figure 3 illustrates an enlarged top view of the oscillation unit and the modulation unit. The Gunn diode (14) is mounted on the Gunn diode mount (6) as illustrated in Figure 4. The Gunn diode mount oscillates millimeter waves by applying bias through the bias choke (13).
The oscillated millimeter waves are supplied to the ΝRD Guide (3) using the dielectric substrate (7) that has permittivity of 2.56 and thickness of 0.3mm as illustrated in Figure 5. Also, the mode suppressor (5) is inserted for suppressing unnecessary mode that is generated when millimeter waves are fed.
The modulation unit is mounted with a certain air gap from the strip resonator
(7). The air gap (d) plays a key role in determining frequency shift corresponding to the voltage at the time of the FM modulation. Figure 8 illustrates the result of change of frequency shift depending on air gap (d). It is found that the frequency shift decreases as the air gap (d) increases.
The modulation unit is mounted upon selecting the appropriate level of frequency shift depending on the air gap. The front Teflon (8), the high permittivity sheet (9), the Varactor diode mount (10) and the rear Teflon (11) are arranged in the order listed herein to construct the modulation unit. The usable frequency range is determined depending on the lengths of the front Teflon (8) and the rear Teflon (11).
Figure 9 is a graph that illustrates frequency range change depending on the length of the front Teflon (8) under the condition that the voltage is 5 V, the thickness of the high permittivity sheet (9) is 0.135mm, the length of the rear Teflon (11) is 2.5mm and the air gap is 1.5mm. The graph shows that the usable frequency range decreases as the length of the front Teflon (8) increases.
Figure 10 is a graph that illustrates frequency range change depending on the length of the rear Teflon (11) under the condition that the voltage is 5N the thickness of the high permittivity sheet is 0.135mm, the length of the front Teflon (8) is 1.2mm and the air gap is 1.5mm. The usable frequency range is determined over the width of 1GHz corresponding to the length of the rear Teflon (11) around the usable frequency determined by the front Teflon (8).
The high permittivity sheet (9) is inserted for the impedance matching between the front Teflon (8) and the Varactor diode mount (10). The thickness of the high permittivity sheet in a preferred embodiment of the present invention is 0.135mm.
In Figure 7, the dielectric substrate (10) that has the permittivity of 2.56 and the thickness of 0.3mm is used and the Varactor diode named MA46H120 and manufactured by M/A Com is used. The gap between the metal thin films on the part where the Varactor diode (17) is mounted is 0.3mm. Metal thin films having the gap of 0.1mm may be used as well.
Consequently, an FM transmitter in the 60GHz range is implemented with the above-described structures. Figure 11 is a graph that illustrates frequency change corresponding to voltage changes (ON 5N 10V) where the air gap is respectively
1.2mm, 1.3mm, 1.4mm, 1.5mm and 1.6mm. As shown in the graph, the frequency change of the FM transmitter that has the air gap of 1.5mm shows the highest linearity.
INDUSTRIAL APPLICABILITY As explained above, an FM transmitter may be downsized by providing an FM transmitter in the new shape according to the present invention and the mass production becomes possible because the fabrication process is made simple.
Also, the FM transmitter according to the present invention may be used widely in various application fields such as radar, broadcasting, etc. due to the small size and the improved linearity and output characteristics of the FM transmitter.

Claims

WHAT IS CLAIMED IS:
1. An FM transmitter, wherein: millimeter waves generated from a Gunn diode mount (6) on which a Gunn diode (14) is mounted are fed by a strip resonator (7); the FM modulation is performed by using a VCO, located at the rear of an oscillation unit and comprised of the front Teflon (8) which has the length of LI and has a certain constant air gap (d) from the oscillation unit, a piece of high permittivity sheet (9), a Varactor diode mount (10) and the rear Teflon (12) that has length of L2; and in order to transmit modulated signals, a mode suppressor (5), an NRD Guide
(3) and an antenna are further included.
PCT/KR2002/000117 2001-02-20 2002-01-25 Nrd guide fm transmitter with fm modulator in rear of gunn oscillator WO2002084785A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR2001/0008328 2001-02-20
KR1020010008328A KR100358983B1 (en) 2001-02-20 2001-02-20 NRD Guide FM Transmitter with FM Modulator in rear of Gunn Oscillator

Publications (1)

Publication Number Publication Date
WO2002084785A1 true WO2002084785A1 (en) 2002-10-24

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003088517A1 (en) * 2002-04-11 2003-10-23 Nrdtech Co., Ltd. Receiver using a multi-layer non-radiative dielectric waveguide
WO2004002003A1 (en) * 2001-01-15 2003-12-31 Chuen Khiang Wang Packaging of a microchip device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030025071A (en) * 2001-09-19 2003-03-28 센싱테크 주식회사 Millimeter Wave Radar Using NRD Guide
CN106788257A (en) * 2016-11-23 2017-05-31 西南大学 Ka wave band single-chip integration voltage controlled oscillators based on plane Gunn diode

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5216388A (en) * 1991-11-12 1993-06-01 Detection Systems, Inc. Microwave oscillator with temperature compensation
JPH07212131A (en) * 1994-01-12 1995-08-11 Japan Energy Corp Millimeter wave oscillator
KR20000063239A (en) * 2000-05-31 2000-11-06 신천우 Transmitter using ML-NRD Guide

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08307113A (en) * 1995-04-27 1996-11-22 Japan Energy Corp Nrd guide gun oscillator

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5216388A (en) * 1991-11-12 1993-06-01 Detection Systems, Inc. Microwave oscillator with temperature compensation
JPH07212131A (en) * 1994-01-12 1995-08-11 Japan Energy Corp Millimeter wave oscillator
KR20000063239A (en) * 2000-05-31 2000-11-06 신천우 Transmitter using ML-NRD Guide

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004002003A1 (en) * 2001-01-15 2003-12-31 Chuen Khiang Wang Packaging of a microchip device
WO2003088517A1 (en) * 2002-04-11 2003-10-23 Nrdtech Co., Ltd. Receiver using a multi-layer non-radiative dielectric waveguide

Also Published As

Publication number Publication date
KR100358983B1 (en) 2002-11-01
CN1491456A (en) 2004-04-21
KR20010044417A (en) 2001-06-05

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