WO2002084730A1 - An integrated silicon contactor and a device and method for manufacturing same - Google Patents
An integrated silicon contactor and a device and method for manufacturing same Download PDFInfo
- Publication number
- WO2002084730A1 WO2002084730A1 PCT/KR2001/000663 KR0100663W WO02084730A1 WO 2002084730 A1 WO2002084730 A1 WO 2002084730A1 KR 0100663 W KR0100663 W KR 0100663W WO 02084730 A1 WO02084730 A1 WO 02084730A1
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- WIPO (PCT)
- Prior art keywords
- silicone
- conductive
- nickel
- magnet
- contact
- Prior art date
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/04—Housings; Supporting members; Arrangements of terminals
- G01R1/0408—Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets
- G01R1/0433—Sockets for IC's or transistors
- G01R1/0441—Details
- G01R1/0466—Details concerning contact pieces or mechanical details, e.g. hinges or cams; Shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- Another aspect of the present invention includes a device for manufacturing ISC, which comprises: an upper die and a lower die, which face each other to form a cavity therebetween, both of them being magnetically insulative and having internally a plurality of magnetic conductive pins which are located corresponding to the conductive silicone parts; a first magnet which is installed over the upper die; and a second magnet, whose polarity is opposite to that of the first magnet, installed under the lower die; whereby the magnetic flux from the first magnet to the second magnet, and vice versa, penetrates the upper and the lower dies.
- the above manufacturing device further comprises a film that is attached on inner surface of either the upper die or the lower die, the film having holes whose location corresponds to the location of the conductive silicone parts and whose thickness is about 20 ⁇ 50 ⁇ m.
- FIG. 2 is a schematic of an integrated silicone contactor according to another embodiment of the present invention.
- FIG. 3 is a detailed view of "A" in FIG. 2
- FIG. 4A to FIG. 4C show a manufacturing method for an integrated silicone contactor
- FIG. 1 is a cross-sectional view showing an integrated silicone contactor 10
- FIG. 3 which enlargingly illustrates "A" in FIG. 2.
- contact pads 30, 30' are formed on and beneath a thin flexible film 28.
- a mixture of nickel particles and diamond particles is deposited on the contact pads 30, 30', and thereafter, gold plating is performed on the nickel-diamond mixture layer.
- the contact pad 30 or 30', nickel-diamond particles, and gold-plated layer 32 unite together, i.e., electrically connected.
- the surface of the contact pads 30, 30' becomes bumpy due to nickel and diamond particles.
- Nickel and diamond particles, playing a role of a dam prevent the gold-plated layer
- FIG. 6 Another usage of the intermediate contact film 28 is shown in FIG. 6. Due to a certain spatial constraint, the position of the leads 22 of a semiconductor device 20 may be deviated from that of the socket board 24 (marked as "offset" in FIG. 6). For this situation, the intermediate contact film 28 shown in FIG. 6 may be used as an extension tool. More specifically describing, since the opposite end of the film 28 has another contact pads 29, the lead 22 and the contact pads of the socket board 24 can be connected remotely via the FIG. 6-depicting intermediate contact film 28. At this time, it is preferable that the contact-pads-bearing part should be pressed with a pressing tool 31.
- FIGs. 4A ⁇ C show the manufacturing method for ISC.
- a manufacturing device is prepared.
- the manufacturing device is shown in FIG. 4A.
- An upper die 34 and a lower die 36 forms a cavity 42.
- Both the upper die 34 and the lower die 36 are magnetically insulative, and they have internally a plurality of magnetic conductive pins 38.
- the magnetic conductive pins 38 must be installed at the same location that the conductive silicone parts 12 are to be formed in ISC.
- magnets 40 are installed, of which the magnetic flux penetrates the dies 34 and 36. In the case of FIG. 4A, since the upper magnet is N-pole and the lower magnet is S-pole, the magnetic flux downward forms.
- a mixture of liquid silicone and conductive metal particles (hereinafter, referred to as "a mixture") is injected into the cavity 42 between the upper die 34 and the lower die 36.
- the conductive metal must be both electrically and magnetically conductive, like nickel, etc. If a mixture is injected, the conductive metal particles gather around the upper and lower magnetic conductive pins 38 by the magnetic force flowing from the upper die 34 and the lower die 36, thereby the conductive silicone parts 12 and the insulative silicone parts 14 being separately formed. This is depicted in FIG. 4B.
- the magnetic force must be continuously applied to the conductive silicone part 12 during hardening.
- ISC of FIG. 1 can be obtained by removal of the dies.
- bottom protrusion 16 of the conductive silicone part 12 shown in FIG. 1 is performed as follows: A film 43 is attached on the inner surface of either the upper die 34 or the lower die 36. The film 43 has holes whose location corresponds to the location of the conductive silicone parts. Thickness "h" of the film 43 is about 20 ⁇ 50 ⁇ m. Accordingly, as shown in FIG. 4C, the conductive silicone part 12 protrudes to the extent of thickness of the film 43.
- a manufacturing method for the intermediate contact film 28 is as follows. A contact-pads-formed flexible film is soaked in a plating solution. A mixture of nickel and diamond particles is added to the solution so that the mixture may be deposited on the contact pads. Next, gold plating is performed so that the contact pads, nickel-diamond particles, and gold-plated layer unite together, i.e., electrically connected.
- this invention has an advantage of providing good contact condition between leads of a semiconductor device and contact pads of a test socket board.
- ISC according to the present invention is easily applicable to a micro-scaled device whose lead interval is very narrow, and then to a high frequency device (even above GHz grade).
- a conventional pogo pin is usable under 1GHz, and it becomes much more expensive as frequency goes up over 4GHz.
- the surface of the contact pads is not be influenced by the ice layer formed during low temperature test, the durability of a test device adopting ISC is improved.
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Leads Or Probes (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
This invention relates to an integrated silicon contactor which is made by integrating both conductive silicon parts which the leads of a semiconductor device contact thereto and insulation silicon parts locating between the respective conductive silicon parts. This invention also relates to a device and method for manufacturing the integrated silicon contactor. The integrated silicon contactor is characterized in that the leads of a semiconductor device are electrically connected with the contact pads of a socket board by forming the conductive silicon parts only in the area corresponding to the leads of the semiconductor device and then making the conductive silicon parts contact with the contact pads of the socket board used for the semiconductor device test.
Description
AN INTEGRATED SILICONE CONTACTOR, AND A DEVICE AND METHOD
FOR MANUFACTURING SAME
Technical Field The present invention relates to a socket contactor for semiconductor device test devices, such as a test jig, etc. More particularly, this invention relates to an integrated silicone contactor, which is made by integrating both conductive silicone parts to which the leads of a semiconductor device contact thereto, and insulative silicone parts locating between the respective conductive silicone parts. This invention also relates to a device and a method for manufacturing the integrated silicone contactor.
Background Art
After a semiconductor device manufacturing process, the electrical characteristics of the semiconductor device is tested by using a test jig. Most of the semiconductor device test processes with the following steps: inserting a semiconductor device into a socket contactor so as to contact the leads of the device with the contactors; applying test signals to the contactors; and analyzing output signals from the contactors as a result of semiconductor device operations. Here, the most important test factor is considered to be the contact interface between the socket contactors and the leads of the semiconductor device. Actually, the contact interface requires the minimum contact resistance and the maximum durability. In the conventional socket contactors, the beryllium-copper or gold plated pogo pins have been popularly used for the socket contactors.
However, since the conventional socket contactors (whether they are pogo pin type or not) have their physical dimensions, there is a limit in applying them to the micro-scaled
semiconductor devices, of which the leads are very densely arrayed. This becomes more aggravated for high frequency devices, which have far more dense lead intervals.
Because of the development in integration technology nowadays, the dimension of a semiconductor device is on a decreasing trend and therefore the leads intervals are being narrowed. In addition, the demand for high frequency semiconductor devices (GHz grade) is more and more increased.
In the mean time, under low temperature test environment (under 0°C), the conventional contactor is frozen to make ices thereon, and so the contact resistance between the contactor and the device leads increases.
Disclosure of Invention
Therefore, it is an object of the present invention to provide an integrated silicone contactor (ISC), which is interposed between a semiconductor device and a semiconductor device test socket board, the contactor comprising: a plurality of conductive silicone parts, whose one side contacts leads of the semiconductor device and the other side contacts contact pads of the socket board so as to electrically connect the leads with the contact pads, and a plurality of insulative silicone parts, which is filled between the respective conductive silicone parts.
Each of the conductive silicone parts comprises a mixture of silicone and conductive metal particles, and it is preferable that a portion of the conductive silicone part contacting the contact pads protrudes comparing to the insulative silicone parts. ISC may comprise an intermediate contact film interposed between the semiconductor device and the conductive silicone part, the intermediate contact film including: a thin flexible film; contact pads formed on and beneath the thin flexible film, each of which contacts either the
conductive silicone part or the lead of the semiconductor device; a nickel-diamond particle layer which is deposited on the contact pads; and a gold-plated layer which is performed on the nickel-diamond particle layer, such that the contact pad, nickel-diamond particles, and gold-plated layer may unite and electrically connected together. Another aspect of the present invention includes a device for manufacturing ISC, which comprises: an upper die and a lower die, which face each other to form a cavity therebetween, both of them being magnetically insulative and having internally a plurality of magnetic conductive pins which are located corresponding to the conductive silicone parts; a first magnet which is installed over the upper die; and a second magnet, whose polarity is opposite to that of the first magnet, installed under the lower die; whereby the magnetic flux from the first magnet to the second magnet, and vice versa, penetrates the upper and the lower dies.
It is preferable that the above manufacturing device further comprises a film that is attached on inner surface of either the upper die or the lower die, the film having holes whose location corresponds to the location of the conductive silicone parts and whose thickness is about 20~50μm.
Yet another aspect of the present invention includes a method of manufacturing ISC, which comprises the steps of: preparing a manufacturing device, which comprises an upper die and a lower die, which face each other to form a cavity therebetween, both of them being magnetically insulative and having internally a plurality of magnetic conductive pins which are located corresponding to the conductive silicone parts; a first magnet which is installed over the upper die; and a second magnet, whose polarity is opposite to that of the first magnet, installed under the lower die; whereby the magnetic flux from the first magnet to the second magnet, and vice versa, penetrates the upper and the lower dies; injecting a
mixture of liquid silicone and conductive metal particles into a cavity between the upper die and the lower die, thereby the conductive metal particles gathering around the upper and lower magnetic conductive pins by the magnetic force flowing from the upper die to the lower die, such that the conductive silicone parts and the insulative silicone parts are separately formed; hardening the formed the conductive silicone parts and the insulative silicone parts, under the application of the magnetic force; and removing the upper and the lower dies to obtain the integrated silicone contactor.
It is preferable that the above manufacturing method includes an intermediate contact film is manufactured by the steps of: soaking a contact-pads-formed flexible film in a plating solution; adding a mixture of nickel and diamond particles to the plating solution, such that the mixture may be deposited on the contact pads and forms a nickel-diamond particle layer; and performing gold plating on the nickel-diamond particle layer, such that the contact pads, nickel-diamond particles, and gold-plated layer unite and electrically connected together.
Brief Description of Drawings The above and other objects, features and advantages of the present invention will become more apparent from the following description when taken in conjunction with the accompanying drawings, in which: FIG. 1 is a schematic of an integrated silicone contactor according to one embodiment of the present invention,
FIG. 2 is a schematic of an integrated silicone contactor according to another embodiment of the present invention,
FIG. 3 is a detailed view of "A" in FIG. 2,
FIG. 4A to FIG. 4C show a manufacturing method for an integrated silicone contactor,
FIG. 5 shows top and cross-sectional view for a device for manufacturing an integrated silicone contactor according to the present invention, and FIG. 6 is a conceptual view depicting a different usage for an intermediate contact film.
Preferred embodiment for Carrying out the Invention
Preferred embodiment for carrying out the present invention will be described herein below with reference to the accompanying drawings. In the following description, well- known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail.
FIG. 1 is a cross-sectional view showing an integrated silicone contactor 10
(hereinafter, referred to as "ISC") according to one embodiment of the present invention. As shown, ISC 10 comprises: a plurality of conductive silicone parts 12, to which ball leads
22 of a BGA (ball grid array) type semiconductor device 20 contact thereto; and a plurality of insulative silicone parts 14 locating between the respective conductive silicone parts 12.
ISC 10 is mounted on a socket board 24 on which semiconductor device test is performed. The respective conductive silicone part 12 touches the respective contact pads 26 on the socket board 24, such that the ball leads 22 and the contact pads 26 may be electrically connected.
The conductive silicone parts 12 are made by mixing silicone and conductive particles, and because they are elastic, they ensure good contact condition at the interface with the socket board 24 or the ball leads 22. The insulative silicone parts 14 are made by
injecting silicone between the adjacent conductive silicone parts 12, so that they make the ISC shape firm. I.e., although the leads of a semiconductor device press the conductive silicone parts 12, the conductive silicone parts 12 may maintain their original shape.
To ensure the good contact condition between the conductive silicone parts 12 and the contact pads 26, a bottom portion 16 of the conductive silicone part 12 protrudes to the extent of "h"(see FIG. 1). It is preferable that "h" is about 20~50μm. Since the bottom portion 16 of the conductive silicone part 12 protrudes, the conductive silicone part 12 can firmly contact the contact pad 26 without any interference with the insulative silicone part 14. So far, BGA is exemplified for a semiconductor device, however it is obvious that the scope of the present invention is not limited to it.
FIG. 2 is a cross-sectional view showing ISC 10 according to another embodiment of the present invention. As shown, it is noticed that an intermediate contact film 28 is interposed between a semiconductor device 20 and ISC 10. The intermediate contact film 28 prevents conductive particles falling from the leads 22 onto the surface of ISC 10. In addition, the intermediate contact film 28 widens the contact area to diminish contact resistance, and breaks the ice layer formed on the contacts during low temperature test.
The structure of the intermediate contact film 28 can be seen in FIG. 3, which enlargingly illustrates "A" in FIG. 2. As shown, contact pads 30, 30' are formed on and beneath a thin flexible film 28. A mixture of nickel particles and diamond particles is deposited on the contact pads 30, 30', and thereafter, gold plating is performed on the nickel-diamond mixture layer. By doing so, the contact pad 30 or 30', nickel-diamond particles, and gold-plated layer 32 unite together, i.e., electrically connected. As a result, the surface of the contact pads 30, 30' becomes bumpy due to nickel and diamond particles.
Nickel and diamond particles, playing a role of a dam, prevent the gold-plated layer
32 from peeling off the contact pads 30, 30'. Owing to the bumpy surface of the contact pads 30, 30', the contact resistance may be lessen and the ice layer formed during a low temperature test may be broken, so good contact condition between the leads of a semiconductor device and the contact pads may be ensured.
Another usage of the intermediate contact film 28 is shown in FIG. 6. Due to a certain spatial constraint, the position of the leads 22 of a semiconductor device 20 may be deviated from that of the socket board 24 (marked as "offset" in FIG. 6). For this situation, the intermediate contact film 28 shown in FIG. 6 may be used as an extension tool. More specifically describing, since the opposite end of the film 28 has another contact pads 29, the lead 22 and the contact pads of the socket board 24 can be connected remotely via the FIG. 6-depicting intermediate contact film 28. At this time, it is preferable that the contact-pads-bearing part should be pressed with a pressing tool 31.
FIGs. 4A~C show the manufacturing method for ISC. First, a manufacturing device is prepared. The manufacturing device is shown in FIG. 4A. An upper die 34 and a lower die 36 forms a cavity 42. Both the upper die 34 and the lower die 36 are magnetically insulative, and they have internally a plurality of magnetic conductive pins 38. The magnetic conductive pins 38 must be installed at the same location that the conductive silicone parts 12 are to be formed in ISC. Over the upper die 34 and under the lower die 36, magnets 40 are installed, of which the magnetic flux penetrates the dies 34 and 36. In the case of FIG. 4A, since the upper magnet is N-pole and the lower magnet is S-pole, the magnetic flux downward forms. Of course, the magnetic flux forms only through the magnetic conductive pins 38 in the upper and lower dies 34, 36.
In the mean time, FIG. 5 is a top and cross-sectional view showing a die-making device especially applicable to micro-BGA device. This device is made by inserting a plurality of pins 46 between two plates 44, which are spaced to each other, and by injecting liquid state epoxy resin 48 into the space between the plates 44. After preparing the manufacturing device as described above, with reference to FIG.
4B, a mixture of liquid silicone and conductive metal particles (hereinafter, referred to as "a mixture") is injected into the cavity 42 between the upper die 34 and the lower die 36. The conductive metal must be both electrically and magnetically conductive, like nickel, etc. If a mixture is injected, the conductive metal particles gather around the upper and lower magnetic conductive pins 38 by the magnetic force flowing from the upper die 34 and the lower die 36, thereby the conductive silicone parts 12 and the insulative silicone parts 14 being separately formed. This is depicted in FIG. 4B.
After the conductive silicone parts 12 are formed, the magnetic force must be continuously applied to the conductive silicone part 12 during hardening. After hardening, ISC of FIG. 1 can be obtained by removal of the dies.
On the other hand, bottom protrusion 16 of the conductive silicone part 12 shown in FIG. 1 is performed as follows: A film 43 is attached on the inner surface of either the upper die 34 or the lower die 36. The film 43 has holes whose location corresponds to the location of the conductive silicone parts. Thickness "h" of the film 43 is about 20~50μm. Accordingly, as shown in FIG. 4C, the conductive silicone part 12 protrudes to the extent of thickness of the film 43.
Meanwhile, a manufacturing method for another ISC shown in FIG. 2 will be described. This type of ISC (FIG. 2) is manufactured by the essentially same method as
that in FIG. 1. That is, after making ISC 10 by the manner shown in FIGs. 4A~C, the intermediate contact film 28 is attached to ISC 10. This is obvious to those skilled in the art.
A manufacturing method for the intermediate contact film 28 is as follows. A contact-pads-formed flexible film is soaked in a plating solution. A mixture of nickel and diamond particles is added to the solution so that the mixture may be deposited on the contact pads. Next, gold plating is performed so that the contact pads, nickel-diamond particles, and gold-plated layer unite together, i.e., electrically connected.
While the invention has been shown and described with reference to a certain embodiment to carry out this invention, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
From the foregoing, this invention has an advantage of providing good contact condition between leads of a semiconductor device and contact pads of a test socket board. In addition, ISC according to the present invention is easily applicable to a micro-scaled device whose lead interval is very narrow, and then to a high frequency device (even above GHz grade). A conventional pogo pin is usable under 1GHz, and it becomes much more expensive as frequency goes up over 4GHz. And, since the surface of the contact pads is not be influenced by the ice layer formed during low temperature test, the durability of a test device adopting ISC is improved.
Claims
What Is Claimed Is:
1 An integrated silicone contactor, which is interposed between a semiconductor device and a semiconductor device test socket board, the contactor comprising a plurality of conductive silicone parts, whose one side contacts leads of the semiconductor device and the other side contacts contact pads of the socket board so as to electrically connect the leads with the contact pads, and a plurality of insulative silicone parts, which is filled between the respective conductive silicone parts
2 The integrated silicone contactor according to claim 1, wherein the conductive silicone parts comprises a mixture of silicone and conductive metal particles
3 The integrated silicone contactor according to claim 1, wherein a portion of the conductive silicone part, contacting the contact pads, protrudes comparing to the insulative silicone parts
4 The integrated silicone contactor according to claim 1 , further comprising an intermediate contact film interposed between the semiconductor device and the conductive silicone part, the intermediate contact film comprising a thin flexible film, contact pads formed on and beneath the thin flexible film, each of which contacts either the conductive silicone part or the lead of the semiconductor device, a nickel-diamond particle layer which is deposited on the contact pads, and a gold-plated layer which is performed on the nickel-diamond particle layer, such that the contact pad, nickel-diamond particles, and gold-plated layer may unite and electrically connected together.
5. The integrated silicone contactor according to claim 4, wherein the intermediate contact film further comprises another contact pad which is extended from one of the contact pads formed on the surface of the thin flexible film.
6. A device for manufacturing the integrated silicone contactor of claim 1, the device comprising: an upper die and a lower die, which face each other to form a cavity therebetween, both of them being magnetically insulative and having internally a plurality of magnetic conductive pins which are located corresponding to the conductive silicone parts, a first magnet which is installed over the upper die, and a second magnet, whose polarity is opposite to that of the first magnet, installed under the lower die, whereby the magnetic flux from the first magnet to the second magnet, and vice versa, penetrates the upper and the lower dies.
7. The device according to claim 6, further comprising a film that is attached on inner surface of either the upper die or the lower die, the film having holes whose location corresponds to the location of the conductive silicone parts and whose thickness is about 20~50μm.
8. The device according to claim 6, wherein the upper die or the lower die comprising: two plates which are spaced to each other, a plurality of pins inserted between the two plates, and epoxy resin injected and hardened in the space between the two plates.
9. The device according to claim 7, wherein the upper die or the lower die comprising: two plates which are spaced to each other, a plurality of pins inserted between the two plates, and epoxy resin injected and hardened in the space between the two plates.
10. A method of manufacturing the integrated silicone contactor of claim 1, the method comprising the steps of: preparing a manufacturing device, which comprises an upper die and a lower die, which face each other to form a cavity therebetween, both of them being magnetically insulative and having internally a plurality of magnetic conductive pins which are located corresponding to the conductive silicone parts; a first magnet which is installed over the upper die; and a second magnet, whose polarity is opposite to that of the first magnet, installed under the lower die; whereby the magnetic flux from the first magnet to the second magnet, and vice versa, penetrates the upper and the lower dies, injecting a mixture of liquid silicone and conductive metal particles into a cavity between the upper die and the lower die, thereby the conductive metal particles gathering around the upper and lower magnetic conductive pins by the magnetic force flowing from the upper die to the lower die, such that the conductive silicone parts and the insulative silicone parts are separately formed, hardening the formed the conductive silicone parts and the insulative silicone parts, under the application of the magnetic force, and removing the upper and the lower dies to obtain the integrated silicone contactor.
11. The method according to claim 10, further comprising the step of attaching the intermediate contact film which comprises a thin flexible film; contact pads formed on and beneath the thin flexible film, each of which contacts either the conductive silicone part or the lead of the semiconductor device; a nickel-diamond particle layer which is deposited on the contact pads; and a gold-plated layer which is performed on the nickel-diamond particle layer, such that the contact pad, nickel-diamond particles, and gold-plated layer may unite and electrically connected together.
12. The method according to claim 11, wherein the intermediate contact film is manufactured by the steps of: soaking a contact-pads-formed flexible film in a plating solution, adding a mixture of nickel and diamond particles to the plating solution, such that the mixture may be deposited on the contact pads and forms a nickel-diamond particle layer, and performing gold plating on the nickel-diamond particle layer, such that the contact pads, nickel-diamond particles, and gold-plated layer unite and electrically connected together.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2001/0019434 | 2001-04-12 | ||
| KR20010019434 | 2001-04-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2002084730A1 true WO2002084730A1 (en) | 2002-10-24 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/KR2001/000663 WO2002084730A1 (en) | 2001-04-12 | 2001-04-21 | An integrated silicon contactor and a device and method for manufacturing same |
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| WO (1) | WO2002084730A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005050782A (en) * | 2003-06-12 | 2005-02-24 | Jsr Corp | Anisotropic connector device and its manufacturing method, and inspection device of circuit device |
| JP2018531816A (en) * | 2015-10-09 | 2018-11-01 | インクロン オサケユキチュアＩｎｋｒｏｎ Ｏｙ | 3D printing material and method for making 3D printed articles |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0248521A2 (en) * | 1986-04-25 | 1987-12-09 | Plessey Overseas Limited | Electrical contactors |
| JPH08111438A (en) * | 1994-10-07 | 1996-04-30 | Aging Tesuta Kaihatsu Kyodo Kumiai | Probe for integrated circuit element |
-
2001
- 2001-04-21 WO PCT/KR2001/000663 patent/WO2002084730A1/en active Application Filing
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0248521A2 (en) * | 1986-04-25 | 1987-12-09 | Plessey Overseas Limited | Electrical contactors |
| JPH08111438A (en) * | 1994-10-07 | 1996-04-30 | Aging Tesuta Kaihatsu Kyodo Kumiai | Probe for integrated circuit element |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005050782A (en) * | 2003-06-12 | 2005-02-24 | Jsr Corp | Anisotropic connector device and its manufacturing method, and inspection device of circuit device |
| JP4507644B2 (en) * | 2003-06-12 | 2010-07-21 | Ｊｓｒ株式会社 | Anisotropic conductive connector device, manufacturing method thereof, and circuit device inspection device |
| JP2018531816A (en) * | 2015-10-09 | 2018-11-01 | インクロン オサケユキチュアＩｎｋｒｏｎ Ｏｙ | 3D printing material and method for making 3D printed articles |
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