WO2002078088A1 - Method for assembling components of different thicknesses - Google Patents

Method for assembling components of different thicknesses Download PDF

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Publication number
WO2002078088A1
WO2002078088A1 PCT/FR2002/000970 FR0200970W WO02078088A1 WO 2002078088 A1 WO2002078088 A1 WO 2002078088A1 FR 0200970 W FR0200970 W FR 0200970W WO 02078088 A1 WO02078088 A1 WO 02078088A1
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WO
WIPO (PCT)
Prior art keywords
components
substrate
receiving
face
different thicknesses
Prior art date
Application number
PCT/FR2002/000970
Other languages
French (fr)
Inventor
David Henry
Claude Massit
Original Assignee
Commissariat A L'energie Atomique
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Publication date
Application filed by Commissariat A L'energie Atomique filed Critical Commissariat A L'energie Atomique
Publication of WO2002078088A1 publication Critical patent/WO2002078088A1/en

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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5389—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
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Definitions

  • the present invention relates to the assembly of components for the formation of integrated structures.
  • the assembly of components aims to obtain a compact structure which groups together components or functional assemblies of components produced separately. This process makes it possible to bring together or associate components whose manufacturing techniques may be different, or even incompatible.
  • the components that can be assembled can be electronic, optical, electro-optical components or micromechanical components, for example. Their assembly can also be used to provide the components with a heat sink. This mainly concerns electronic power components.
  • a particular field of application of the invention is that of the production of structures integrating power components such as IGBT transistors (Insulated Gâte Bipolar Transistors, bipolar transistors with insulated gate) or power diodes, for example.
  • IGBT transistors Insulated Gâte Bipolar Transistors, bipolar transistors with insulated gate
  • power diodes for example.
  • the integrated structures obtained by assembling components, also designated by modules, can themselves be combined so as to produce even more complex assemblies.
  • FIG. 1 A first technique for assembling components is illustrated in FIG. 1 attached. This technique is described in document (1), the full references of which are mentioned at the end of the description.
  • Components are made integral with a support comprising a main substrate 12, made of copper or Kovar, for example, and an intermediate substrate 14 of the DBC (Direct Bonding Copper) type.
  • the intermediate substrate is integral with the main substrate which carries connection pins 18.
  • a free face 20 of the components 10 has contact terminals 22. These terminals are intended for the mutual interconnection of the components and / or for their connection to the pins 18.
  • the electrical connections are made by wires 24 according to a known and designated technique usually by "ire bonding".
  • One face of the components, opposite the free face 20, is glued or welded to the support, and, in the example of the figure, on the intermediate substrate 14.
  • connection substrate 40 This can also be of the DBC type.
  • the connection substrate 40 comprises pads 42 which coincide with the contact terminals 22 of the components.
  • the studs 42 and the terminals 22 can be connected by bosses 43 of fusible material which not only ensure mechanical cohesion but also electrical contacts.
  • the connection substrate also incorporates conductive tracks, not visible in the figure, which connect the pads 42 according to a determined wiring pattern.
  • connections by 24 which remain on the device in FIG. 2 are the connections between the intermediate substrate 14 and the pins 18, and possibly those between the connection substrate 40 and the pins 18.
  • the heat dissipation of the modules according to Figure 2 is much better than that of the modules according to Figure 1. This is due in particular to a decrease in the thermal resistance of the contacts.
  • the contacts between the terminals 22 of the components and connection pads 42 of the substrate 40 are indeed electrical contacts but also mechanical and thermal. Heat dissipation is for example from 350 to 400W / cm 2 , against only 150 W / cm 2 for the structure described with reference to Figure 1.
  • the decrease in thermal resistance is linked in particular to the use of a fusible material 43, such as a solder, to carry out the transfer of the terminals 22 of the components to the pads 42 of the connection substrate 40.
  • a fusible material 43 such as a solder
  • a fusible material is used not only to connect the terminals 22 to the pads 42 of the connection substrate, but also to connect the components to the intermediate substrate 14. It is a layer 32.
  • a fusible material makes it possible to compensate for slight differences in thickness of the interconnected components. This is due to surface tension properties in such a material in the molten state.
  • a certain uniformity of thickness of the component is essential.
  • the assembly technique illustrated in FIG. 2 does not make it possible to combine components having differences in thickness which exceed the usual manufacturing tolerances of the components. A large difference in the thickness of the components beyond a compensation limit by the fusible material would have the consequence, if not to prevent the interconnection, at least to make it hazardous.
  • the object of the invention is to propose a method of assembling components which does not have the limitations of the methods described above.
  • An object of the invention is in particular to propose an assembly method making it possible to associate components of various thicknesses, of various nature, produced according to various techniques, and capable of cooperating for the realization of electrical, optical or mechanical functions .
  • An object of the invention is also to allow the interconnection of electronic components having a large number of contact terminals, that is to say components with a large number of input-outputs.
  • Another object of the invention is to propose an assembly structure which allows good heat dissipation and which thus makes it possible to integrate electronic power components.
  • the subject of the invention is more precisely a method of assembling components of different thicknesses on a receiving substrate, comprising the following successive steps: a) producing a staggering on a receiving face of the substrate, the tier having at least two areas for receiving components, b) transferring the components to the substrate by placing the components on the receiving areas as a function of their thickness, so as to minimize gaps between the free faces of the components in a direction perpendicular to the reception ranges.
  • the thicker components are arranged on receiving areas forming deeper depressions relative to a surface of the substrate, while the thinner components are arranged on the surface of the substrate or in shallower depressions .
  • Such an arrangement tends to make the free faces of the coplanar components or, at least, to reduce the differences in "coplanarity".
  • each component is transferred to a range of reception of the substrate having a depression, the depth of which is a function of the thickness of said component.
  • the depth of the depressions is proportional to the thickness of the components, or at least to categories of component thicknesses, the free faces of the latter are coplanar to the manufacturing tolerances.
  • the process can be completed by bringing the free face of the components into contact with a second substrate.
  • the transfer to another substrate can have several functions.
  • the second substrate can be provided for conditioning the components, for their electrical interconnection, for mechanical cohesion of the structure, and finally, for possible heat dissipation.
  • the fusible material can be used in particular for transferring the connection terminals of the components to corresponding pads or reception pads of the second substrate.
  • fusible material Connection by fusible material is a technique known per se and also designated by "flip-chip". It consists in using blocks or bosses of fusible material to connect pads or contact terminals of the parts to be assembled.
  • the selected fusible material has a sufficiently low melting temperature so as not to alter the components. This is, for example, a weld.
  • Interconnection pads can also be formed in the depressions of the receiving substrate. Depending on whether the receiving substrate includes or not connection tracks, it can also be used to interconnect the components. Otherwise, its role remains limited to that of a mechanical support or to heat dissipation.
  • interconnection pads can take place in particular by screen printing. This aspect will be described in more detail later in the text.
  • the invention also relates to an integrated structure comprising a plurality of components having different thicknesses, the components being in contact by a first face with a first substrate having stepped areas for receiving the components, and, by a second face, opposite the first face, to a second substrate, with a reception area of the components that is substantially planar.
  • the first substrate that is to say the receiving substrate, as well as the second substrate can be heat dissipation and / or interconnection substrates.
  • FIG. 3 is a schematic and simplified section of a module according to the invention.
  • FIGS 4, 5, 6, 7A, 8A and 9 are schematic and simplified sections of a substrate, illustrating successive steps of a particular implementation of the assembly method of the invention.
  • FIGS 7B, and 8B are schematic and simplified sections of a substrate illustrating variants of implementation of certain steps of the process, which take place between the steps illustrated in Figures 6 and 9.
  • Figure 3 shows a module according to the invention.
  • the figure represents a structure which only comprises two components 110a and 110b, one of which 110a is thin and the second of which 110b is thick. These are, for example, electronic power components. It will however be understood that a module in accordance with the invention may comprise a large number of components of different thickness categories.
  • the components 110a and 110b are transferred onto a first substrate 112, also called receiving substrate.
  • a first substrate 112 also called receiving substrate.
  • this is a DBC type plate.
  • the DBC plate comprises a ceramic layer 120 sandwiched between two layers of copper 122, 124.
  • the use of such a substrate is dictated, in this example, by essentially heat dissipation requirements.
  • a substrate made of a semiconductor material or a dielectric material can also be retained.
  • the substrate has two receiving areas of components 130a and 130b, arranged on one of the copper layers 122 of the first substrate 112.
  • the second reception area 130b forms a depression with respect to the surface of the substrate facing the components, and therefore also with respect to the first reception area.
  • the depth of the depression is adjusted to correspond to the difference between the thicknesses of the first and second components.
  • the first component 110a, the thinnest is fixed on the first area 130a, while the second component 110b, which is thicker, finds its place in the depression, and is therefore fixed on the second area 130b.
  • the faces 120 of the components turned away from the receiving substrate 112 are found to be substantially coplanar.
  • the components are fixed to the surface copper layer 122 of the receiving substrate 112 by means of layers 132 of fusible material. It is, for example, a metal or an alloy such as SnPb, SnPbAg or In.
  • the references 122 designate contact terminals of the components, these terminals can serve in particular as electrical contact terminals, for example, signal input and output terminals.
  • Contact terminals can also be used for heat dissipation. They are preferably made of an electrically conductive material wettable by a fusible material used to weld them on a second substrate 140.
  • the contact terminals are in fact soldered on pads 142 of the second substrate defined by openings made in an insulating layer 144.
  • the fixing of the contact terminals on the pads 142 takes place by means of bosses 146 of fusible material. These bosses make it possible to compensate for any dispersions of the thicknesses of the components or of the depth of the depressions etched in the receiving substrate.
  • the areas 142 of the second substrate 140 are simply defined on a copper layer 148 of this substrate. It is indeed a DBC type substrate, like the first substrate 112.
  • the pads 142 may however be replaced or filled with wettable pads like those shown in FIG. 2, described with reference to the prior art.
  • a copper layer of the second substrate connects each time two contact terminals of each component.
  • the second substrate can however be provided with a much more complex network for connecting the terminals according to a desired wiring diagram.
  • a first step shows the deposition of a photosensitive material 150 on a DBC substrate 112 having a ceramic layer 120 interposed between two layers of copper 122, 124.
  • the layer of photosensitive material 150 covers the layers of copper. It is for example a dry photosensitive film as generally used in the printed circuit industry, or a photosensitive resin of the type used in the microelectronics industry.
  • the layer of photosensitive material can be deposited by spraying, by centrifugation, or by rolling.
  • FIG. 5 shows a lithography step during which the photosensitive layer is exposed according to a determined lithography pattern, then developed to eliminate parts corresponding to locations for receiving components.
  • the technique of exposure for example by means of a UV lamp, and of development, are well known per se.
  • the photosensitive layer is shaped to be preserved in a first region of the copper layer 122 and to be eliminated in a second region. It is also observed that the photosensitive layer is only shaped on one of the faces of the substrate. It should be noted in this regard that treatment by two sides is also possible.
  • a next step in the process, illustrated in FIG. 6, is the etching of the substrate in the regions which are not protected by the layer of photosensitive material 150.
  • the etching carried out by chemical or plasma means, is interrupted when the depth of etching corresponds to the difference in thickness between the components to be received on an unetched part of the substrate, and those to be received on an etched part.
  • the masking and etching operations can be repeated.
  • the photosensitive layer can be completely removed as shown in Figure 6.
  • the etching of the substrate can also take place by direct abrasion by means of a cutting tool such as a milling cutter, for example. In this case no masking by photosensitive film is necessary.
  • the substrate can be provided with an insulation layer, indicated with the reference 152 in FIG. 7A.
  • the insulation layer 152 delimits the reception areas of the components on each level of the tier obtained by etching. It also makes it possible to avoid subsequent electric arcs when the components are subjected to an electrical voltage.
  • FIG. 8A shows the lining of the areas for receiving the components of a sealing material 132 allowing the components to be fixed thereto.
  • the material can be an adhesive, conductive or not. In the example described, it is a fusible metal, that is to say a metal which can be melted at low temperature, such as SnPb, or an alloy based on these metals and / or based on 'indium.
  • the techniques adopted for the installation of the fusible material 132 are, for example, electrochemical deposition, screen printing, automatic dispensing with a syringe or the introduction of preforms.
  • electrolysis suitable for substrates including a conductive layer, allows precise control of the thickness and composition of the material formed.
  • Screen printing is suitable for depositing materials, metallic or not, existing in the form of paste.
  • FIGs 7B and 8B precisely illustrate an installation of the sealing material 132 of the components according to the screen printing technique.
  • a screen printing stencil 160 is applied to the surface of the substrate.
  • the stencil has openings 162 corresponding to the places where material is to be deposited.
  • the material, pushed by a screen printing scraper 164 is introduced into the openings 162, and equalized to a uniform height which corresponds to the thickness of the stencil.
  • the sealing material can thus be used to form connection pads.
  • FIG. 8B shows the placement of the material on the reception area corresponding to the vacuum.
  • the stencil overflows on the edges of the depression and perfectly matches the bottom during the passage of the doctor blade 164.
  • FIG. 9 corresponds to a step consecutive to that of FIG. 8A.
  • the contact terminals 122 of the components are also lined with balls 146 of fusible material. As the free faces of the components are substantially coplanar, it is then easy to transfer them to a second substrate having a substantially flat receiving face. Finally, a module is obtained comparable to the module of FIG. 3, already described.

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Abstract

The invention relates to a method for assembling components (110a, 110b) of different thicknesses. Said components are in contact, respectively, by means of first face, with a first substrate (112) having areas for receiving stacked components and, by means of second face that is opposite the first face, with a second substrate (140) with a more or less flat area for receiving components.

Description

ASSEMBLAGE DE COMPOSANTS D'EPAISSEURS DIVERSES ASSEMBLY OF COMPONENTS OF VARIOUS THICKNESSES
Domaine techniqueTechnical area
La présente invention concerne l'assemblage de composants pour la formation de structures intégrées.The present invention relates to the assembly of components for the formation of integrated structures.
L'assemblage de composants vise à obtenir une structure compacte qui regroupe des composants ou des ensembles fonctionnels de composants réalisés séparément. Ce procédé permet de réunir ou d'associer des composants dont les techniques de fabrication peuvent être différentes, voire même incompatibles.The assembly of components aims to obtain a compact structure which groups together components or functional assemblies of components produced separately. This process makes it possible to bring together or associate components whose manufacturing techniques may be different, or even incompatible.
Les composants susceptibles d'être assemblés peuvent être des composants électroniques, optiques, électro-optiques ou des composants de micromécanique, par exemple. Leur assemblage peut également être mis à profit pour munir les composants d'un dissipateur thermique. Ceci concerne essentiellement les composants électroniques de puissance.The components that can be assembled can be electronic, optical, electro-optical components or micromechanical components, for example. Their assembly can also be used to provide the components with a heat sink. This mainly concerns electronic power components.
Ainsi, un domaine particulier d'application de l'invention est celui de la réalisation de structures intégrant des composants de puissance tels que des transistors IGBT (Insulated Gâte Bipolar Transistors, transistors bipolaires à grille isolée) ou des diodes de puissance, par exemple. Les structures intégrées obtenues par l'assemblage de composants, encore désignées par modules, peuvent elles-mêmes être combinées de façon à réaliser des ensembles plus complexes encore. Etat de la technique antérieureThus, a particular field of application of the invention is that of the production of structures integrating power components such as IGBT transistors (Insulated Gâte Bipolar Transistors, bipolar transistors with insulated gate) or power diodes, for example. The integrated structures obtained by assembling components, also designated by modules, can themselves be combined so as to produce even more complex assemblies. State of the art
Une première technique d'assemblage de composants est illustrée par la figure 1 annexée. Cette technique est décrite dans le document (1) dont les références complètes sont mentionnées à la fin de la description.A first technique for assembling components is illustrated in FIG. 1 attached. This technique is described in document (1), the full references of which are mentioned at the end of the description.
Des composants sont rendus solidaires d'un support comprenant un substrat principal 12, en cuivre ou en Kovar, par exemple, et un substrat intermédiaire 14 du type DBC (Direct Bonding Copper, support à report rigide) . Le substrat intermédiaire est solidaire du substrat principal qui porte des broches de connexion 18.Components are made integral with a support comprising a main substrate 12, made of copper or Kovar, for example, and an intermediate substrate 14 of the DBC (Direct Bonding Copper) type. The intermediate substrate is integral with the main substrate which carries connection pins 18.
Une face libre 20 des composants 10 présente des bornes de contact 22. Ces bornes sont destinées à l'interconnexion mutuelle des composants et/ou à leur connexion aux broches 18. Les connexions électriques sont réalisées par des fils 24 selon une technique connue et désignée usuellement par " ire bonding" . Une face des composants, opposée à la face libre 20, est collée ou soudée sur le support, et, dans l'exemple de la figure, sur le substrat intermédiaire 14.A free face 20 of the components 10 has contact terminals 22. These terminals are intended for the mutual interconnection of the components and / or for their connection to the pins 18. The electrical connections are made by wires 24 according to a known and designated technique usually by "ire bonding". One face of the components, opposite the free face 20, is glued or welded to the support, and, in the example of the figure, on the intermediate substrate 14.
L'assemblage des composants conformément à la figure 1 présente un certain nombre de limitations. Des problèmes de fiabilité des soudures des fils de connexion 24 sur les bornes 22, de même qu'une piètre dissipation thermique, en sont les principales. De plus, le câblage par fils est peu adapté à l'interconnexion de composants présentant un nombre élevé de bornes de contact, c'est-à-dire de bornes d'entrée et de sortie.The assembly of the components in accordance with Figure 1 has a number of limitations. Reliability problems of the soldering of the connection wires 24 on the terminals 22, as well as poor heat dissipation, are the main ones. In addition, the wiring by wires is poorly suited to the interconnection of components having a number high of contact terminals, that is to say of input and output terminals.
Une alternative au procédé de connexion de la figure 1 est illustrée par la figure 2. Cette technique est décrite dans le document (2) dont les références complètes sont mentionnées à la fin de la description. Les fils de connexion sont pour la plupart remplacés par un substrat de connexion 40. Celui-ci peut également être du type DBC . Le substrat de connexion 40 comprend des plots 42 qui coïncident avec les bornes de contact 22 des composants. Les plots 42 et les bornes 22 peuvent être reliés par des bossages 43 de matériau fusible qui assurent non seulement une cohésion mécanique mais aussi des contacts électriques. Le substrat de connexion intègre également des pistes conductrices, non visibles sur la figure, qui relient les plots 42 selon un motif de câblage déterminé.An alternative to the connection method of Figure 1 is illustrated in Figure 2. This technique is described in document (2) whose full references are mentioned at the end of the description. The connection wires are mostly replaced by a connection substrate 40. This can also be of the DBC type. The connection substrate 40 comprises pads 42 which coincide with the contact terminals 22 of the components. The studs 42 and the terminals 22 can be connected by bosses 43 of fusible material which not only ensure mechanical cohesion but also electrical contacts. The connection substrate also incorporates conductive tracks, not visible in the figure, which connect the pads 42 according to a determined wiring pattern.
Les seules connexions par 24 qui subsistent sur le dispositif de la figure 2 sont les connexions entre le substrat intermédiaire 14 et les broches 18, et éventuellement celles entre le substrat de connexion 40 et les broches 18.The only connections by 24 which remain on the device in FIG. 2 are the connections between the intermediate substrate 14 and the pins 18, and possibly those between the connection substrate 40 and the pins 18.
La dissipation thermique des modules conformes à la figure 2 est nettement meilleure que celle des modules conformes à la figure 1. Ceci est dû notamment à une diminution de la résistance thermique des contacts. Les contacts entre les bornes 22 des composants et plots de connexion 42 du substrat 40 sont en effet des contacts électriques mais aussi mécaniques et thermiques. La dissipation thermique est par exemple de 350 à 400W/cm2, contre seulement 150 W/cm2 pour la structure décrite en référence à la figure 1.The heat dissipation of the modules according to Figure 2 is much better than that of the modules according to Figure 1. This is due in particular to a decrease in the thermal resistance of the contacts. The contacts between the terminals 22 of the components and connection pads 42 of the substrate 40 are indeed electrical contacts but also mechanical and thermal. Heat dissipation is for example from 350 to 400W / cm 2 , against only 150 W / cm 2 for the structure described with reference to Figure 1.
La diminution de la résistance thermique est liée notamment à l'utilisation d'un matériau fusible 43, tel qu'une soudure, pour effectuer le report des bornes 22 des composants sur les plots 42 du substrat de connexion 40.The decrease in thermal resistance is linked in particular to the use of a fusible material 43, such as a solder, to carry out the transfer of the terminals 22 of the components to the pads 42 of the connection substrate 40.
On observe sur la figure 2 qu'un matériau fusible est utilisé non seulement pour relier les bornes 22 aux plots 42 du substrat de connexion, mais aussi pour relier les composants au substrat intermédiaire 14. Il s'agit d'une couche 32.It can be seen in FIG. 2 that a fusible material is used not only to connect the terminals 22 to the pads 42 of the connection substrate, but also to connect the components to the intermediate substrate 14. It is a layer 32.
Dans un module conforme à la figure 2, l'utilisation d'un matériau fusible permet de compenser de légers écarts d'épaisseur des composants interconnectés. Ceci est dû à des propriétés de tension superficielle dans un tel matériau à l'état fondu. Toutefois, une certaine uniformité d'épaisseur du composant est indispensable. En particulier, la technique d'assemblage illustrée par la figure 2 ne permet pas de réunir des composants présentant des différences d'épaisseur qui excèdent les tolérances de fabrication usuelles des composants. Une forte différence dans l'épaisseur des composants au-delà d'une limite de compensation par le matériau fusible, aurait pour conséquence sinon d'empêcher l'interconnexion, tout au moins de la rendre hasardeuse . Exposé de l'inventionIn a module according to FIG. 2, the use of a fusible material makes it possible to compensate for slight differences in thickness of the interconnected components. This is due to surface tension properties in such a material in the molten state. However, a certain uniformity of thickness of the component is essential. In particular, the assembly technique illustrated in FIG. 2 does not make it possible to combine components having differences in thickness which exceed the usual manufacturing tolerances of the components. A large difference in the thickness of the components beyond a compensation limit by the fusible material would have the consequence, if not to prevent the interconnection, at least to make it hazardous. Statement of the invention
L'invention a pour but de proposer un procédé d'assemblage de composants qui ne présente pas les limitations des procédés décrits précédemment. Un but de l'invention est en particulier de proposer un procédé d'assemblage permettant d'associer des composants d'épaisseurs diverses, de nature diverses, réalisés selon des techniques diverses, et susceptible de coopérer pour la réalisation de fonctions électriques optiques ou mécaniques.The object of the invention is to propose a method of assembling components which does not have the limitations of the methods described above. An object of the invention is in particular to propose an assembly method making it possible to associate components of various thicknesses, of various nature, produced according to various techniques, and capable of cooperating for the realization of electrical, optical or mechanical functions .
Un but de l'invention est aussi de permettre l'interconnexion de composants électroniques présentant un grand nombre de borne de contact, c'est-à-dire des composants avec un grand nombre d'entrées-sorties. Un autre but de l'invention est de proposer une structure d'assemblage qui autorise une bonne dissipation thermique et qui permet ainsi d'intégrer des composants électroniques de puissance.An object of the invention is also to allow the interconnection of electronic components having a large number of contact terminals, that is to say components with a large number of input-outputs. Another object of the invention is to propose an assembly structure which allows good heat dissipation and which thus makes it possible to integrate electronic power components.
Pour atteindre ces buts, l'invention a plus précisément pour objet un procédé d'assemblage de composants d'épaisseurs différentes sur un substrat de réception, comprenant les étapes successives suivantes : a) la réalisation d'un étagement sur une face de réception du substrat, l' étagement présentant au moins deux plages de réception de composants, b) le report des composants sur le substrat en disposant les composants sur les plages de réception en fonction de leur épaisseur, de façon à minimiser des écarts entre les faces libres des composants dans une direction perpendiculaire aux plages de réception.To achieve these goals, the subject of the invention is more precisely a method of assembling components of different thicknesses on a receiving substrate, comprising the following successive steps: a) producing a staggering on a receiving face of the substrate, the tier having at least two areas for receiving components, b) transferring the components to the substrate by placing the components on the receiving areas as a function of their thickness, so as to minimize gaps between the free faces of the components in a direction perpendicular to the reception ranges.
En d'autres termes, les composants les plus épais sont disposés sur des plages de réception formant des dépressions plus profondes par rapport à une surface du substrat, tandis que les composants moins épais sont disposés à la surface du substrat ou dans des dépressions moins profondes. Un tel agencement tend à rendre les faces libres des composants coplanaires ou, tout au moins, à réduire les écarts de "coplanarité" .In other words, the thicker components are arranged on receiving areas forming deeper depressions relative to a surface of the substrate, while the thinner components are arranged on the surface of the substrate or in shallower depressions . Such an arrangement tends to make the free faces of the coplanar components or, at least, to reduce the differences in "coplanarity".
Selon un perfectionnement du procédé, on peut former des dépressions de différentes profondeurs ajustées à différentes épaisseurs de composants. Dans ce cas, lors de l'étape b) , on reporte chaque composant sur une plage de réception du substrat présentant une dépression dont la profondeur est fonction de l'épaisseur dudit composant. Lorsque la profondeur des dépressions est proportionnelle à l'épaisseur des composants, ou tout au moins à des catégories d'épaisseurs de composants, les faces libres de ces derniers sont coplanaires aux tolérances de fabrication près .According to an improvement of the process, it is possible to form depressions of different depths adjusted to different thicknesses of components. In this case, during step b), each component is transferred to a range of reception of the substrate having a depression, the depth of which is a function of the thickness of said component. When the depth of the depressions is proportional to the thickness of the components, or at least to categories of component thicknesses, the free faces of the latter are coplanar to the manufacturing tolerances.
Comme les faces libres des composants sont sensiblement coplanaires, le procédé peut être complété par la mise en contact de la face libre des composants avec un deuxième substrat .As the free faces of the components are substantially coplanar, the process can be completed by bringing the free face of the components into contact with a second substrate.
Le report sur un autre substrat peut avoir plusieurs fonctions. Le deuxième substrat peut être prévu pour le conditionnement des composants, pour leur interconnexion électrique, pour la cohésion mécanique de la structure, et enfin, pour une éventuelle dissipation thermique.The transfer to another substrate can have several functions. The second substrate can be provided for conditioning the components, for their electrical interconnection, for mechanical cohesion of the structure, and finally, for possible heat dissipation.
Une meilleure dissipation thermique est obtenue en solidarisant le deuxième substrat et les composants au moyen d'un matériau fusible. Le matériau fusible peut être retenu notamment pour le report de bornes de connexion des composants sur des plages ou des plots de réception correspondants du deuxième substrat.Better heat dissipation is obtained by joining the second substrate and the components using a fusible material. The fusible material can be used in particular for transferring the connection terminals of the components to corresponding pads or reception pads of the second substrate.
La connexion par matériau fusible est une technique connue en soi et désignée encore par "flip- chip". Elle consiste à utiliser des pavés ou des bossages de matériau fusible pour relier des plots ou bornes de contact des pièces à assembler. Le matériau fusible sélectionné présente une température de fusion suffisamment basse pour ne pas altérer les composants. Il s'agit, par exemple d'une soudure.Connection by fusible material is a technique known per se and also designated by "flip-chip". It consists in using blocks or bosses of fusible material to connect pads or contact terminals of the parts to be assembled. The selected fusible material has a sufficiently low melting temperature so as not to alter the components. This is, for example, a weld.
Des plots d'interconnexion peuvent également être formés dans les dépressions du substrat de réception. Selon que le substrat de réception comprenne ou non des pistes de connexion, il peut également servir à l'interconnexion des composants. Sinon, son rôle reste limité à celui d'un support mécanique ou à la dissipation thermique.Interconnection pads can also be formed in the depressions of the receiving substrate. Depending on whether the receiving substrate includes or not connection tracks, it can also be used to interconnect the components. Otherwise, its role remains limited to that of a mechanical support or to heat dissipation.
La formation des plots d'interconnexion peut avoir lieu notamment par sérigraphie. Cet aspect sera décrit plus en détail dans la suite du texte.The formation of the interconnection pads can take place in particular by screen printing. This aspect will be described in more detail later in the text.
L'invention concerne également une structure intégrée comprenant une pluralité de composants présentant des épaisseurs différentes, les composants étant en contact par une première face avec un premier substrat présentant des plages étagées de réception des composants, et, par une deuxième face, opposée à la première face, à un deuxième substrat, avec une plage de réception des composants sensiblement plane.The invention also relates to an integrated structure comprising a plurality of components having different thicknesses, the components being in contact by a first face with a first substrate having stepped areas for receiving the components, and, by a second face, opposite the first face, to a second substrate, with a reception area of the components that is substantially planar.
Le premier substrat, c'est-à-dire le substrat de réception, de même que le deuxième substrat peuvent être des substrats de dissipation thermique et/ou d' interconnexion.The first substrate, that is to say the receiving substrate, as well as the second substrate can be heat dissipation and / or interconnection substrates.
D'autres caractéristiques et avantages de l'invention ressortiront de la description qui va suivre, en référence aux figures des dessins annexés.Other characteristics and advantages of the invention will emerge from the description which follows, with reference to the figures of the accompanying drawings.
Cette description est donnée à titre purement illustratif et non limitatif.This description is given purely by way of non-limiting illustration.
Brève description des figures - La figure 1, déjà décrite, est une coupe schématique simplifiée d'un module formé par l'assemblage de composants selon une technique connue.Brief description of the figures - Figure 1, already described, is a simplified schematic section of a module formed by assembling components according to a known technique.
- La figure 2, déjà décrite, est une coupe schématique et simplifiée d'un module formé par l'assemblage de composants selon une autre technique connue .- Figure 2, already described, is a schematic and simplified section of a module formed by the assembly of components according to another known technique.
- La figure 3 est une coupe schématique et simplifiée d'un module conforme à l'invention.- Figure 3 is a schematic and simplified section of a module according to the invention.
- Les figures 4, 5, 6, 7A, 8A et 9 sont des coupes schématiques et simplifiées d'un substrat, illustrant des étapes successives d'une mise en œuvre particulière du procédé d'assemblage de l'invention.- Figures 4, 5, 6, 7A, 8A and 9 are schematic and simplified sections of a substrate, illustrating successive steps of a particular implementation of the assembly method of the invention.
- Les figures 7B, et 8B, sont des coupes schématiques et simplifiées d'un substrat illustrant des variantes de mise en œuvre de certaines étapes du procédé, qui prennent place entre les étapes illustrées par les figures 6 et 9.- Figures 7B, and 8B, are schematic and simplified sections of a substrate illustrating variants of implementation of certain steps of the process, which take place between the steps illustrated in Figures 6 and 9.
Description détaillée de modes de mise en œuyre de 1' invention.Detailed description of methods of implementing the invention.
Dans le texte qui suit, des parties identiques, équivalentes ou similaires des différentes figures, sont repérées avec les mêmes références numériques, de façon à éviter une répétition de leur description. La figure 3, montre un module conforme à l'invention. Pour des raisons de simplification la figure représente une structure qui ne comprend que deux composants 110a et 110b, dont l'un 110a est mince et dont le second 110b est épais. Il s'agit, par exemple, de composants électroniques de puissance. On comprendra cependant qu'un module conforme à l'invention peut comporter un grand nombre de composants de différentes catégories d'épaisseur.In the following text, identical, equivalent or similar parts of the different figures are identified with the same reference numerals, so as to avoid repetition of their description. Figure 3 shows a module according to the invention. For reasons of simplification, the figure represents a structure which only comprises two components 110a and 110b, one of which 110a is thin and the second of which 110b is thick. These are, for example, electronic power components. It will however be understood that a module in accordance with the invention may comprise a large number of components of different thickness categories.
Les composants 110a et 110b sont reportés sur un premier substrat 112, encore appelé substrat de réception. Il s'agit, dans l'exemple illustré, d'une plaque de type DBC. La plaque DBC comprend une couche de céramique 120 prise en sandwich entre deux couches de cuivre 122, 124. L'utilisation d'un tel substrat est dicté, dans cet exemple, par des impératifs de dissipation thermique essentiellement. Dans d'autres applications, un substrat en un matériau semiconducteur ou en un matériau diélectrique peut aussi être retenu. Le substrat présente deux plages de réception de composants 130a et 130b, ménagées sur l'une des couches 122 de cuivre du premier substrat 112.The components 110a and 110b are transferred onto a first substrate 112, also called receiving substrate. In the example illustrated, this is a DBC type plate. The DBC plate comprises a ceramic layer 120 sandwiched between two layers of copper 122, 124. The use of such a substrate is dictated, in this example, by essentially heat dissipation requirements. In other applications, a substrate made of a semiconductor material or a dielectric material can also be retained. The substrate has two receiving areas of components 130a and 130b, arranged on one of the copper layers 122 of the first substrate 112.
La deuxième plage de réception 130b forme une dépression par rapport à la surface du substrat tournée vers les composants, et donc également par rapport à la première plage de réception. La profondeur de la dépression est ajustée pour correspondre à la différence entre les épaisseurs des premier et deuxième composants. Le premier composant 110a, le plus mince, est fixé sur la première plage 130a, tandis que le deuxième composant 110b, plus épais trouve sa place dans la dépression, et est donc fixé sur la deuxième plage 130b. Ainsi, les faces 120 des composants tournées à l'opposé du substrat de réception 112, se trouvent être sensiblement coplanaires.The second reception area 130b forms a depression with respect to the surface of the substrate facing the components, and therefore also with respect to the first reception area. The depth of the depression is adjusted to correspond to the difference between the thicknesses of the first and second components. The first component 110a, the thinnest, is fixed on the first area 130a, while the second component 110b, which is thicker, finds its place in the depression, and is therefore fixed on the second area 130b. Thus, the faces 120 of the components turned away from the receiving substrate 112 are found to be substantially coplanar.
Les composants sont fixés à la couche de cuivre superficielle 122 du substrat de réception 112 par l'intermédiaire de couches 132 de matériau fusible. Il s'agit, par exemple, d'un métal ou d'un alliage tel que SnPb, SnPbAg ou In.The components are fixed to the surface copper layer 122 of the receiving substrate 112 by means of layers 132 of fusible material. It is, for example, a metal or an alloy such as SnPb, SnPbAg or In.
Les références 122 désignent des bornes de contact des composants, ces bornes peuvent servir notamment de bornes de contact électrique, par exemple, de bornes d'entrée et de sortie de signal. Les bornes de contact peuvent aussi servir à la dissipation thermique. Elles sont de préférence réalisées en un matériau conducteur électrique mouillable par un matériau fusible utilisé pour les souder sur un deuxième substrat 140. Les bornes de contact sont en effet soudées sur des plages 142 du deuxième substrat définies par des ouvertures pratiquées dans une couche isolante 144. La fixation des bornes de contact sur les plages 142 a lieu par l'intermédiaire de bossages 146 de matériau fusible. Ces bossages permettent de compenser d'éventuelles dispersions des épaisseurs des composants ou de la profondeur des dépressions gravées dans le substrat de réception. Les plages 142 du deuxième substrat 140 sont simplement définies sur une couche de cuivre 148 de ce substrat. Il s'agit en effet d'un substrat du type DBC, à l'instar du premier substrat 112.The references 122 designate contact terminals of the components, these terminals can serve in particular as electrical contact terminals, for example, signal input and output terminals. Contact terminals can also be used for heat dissipation. They are preferably made of an electrically conductive material wettable by a fusible material used to weld them on a second substrate 140. The contact terminals are in fact soldered on pads 142 of the second substrate defined by openings made in an insulating layer 144. The fixing of the contact terminals on the pads 142 takes place by means of bosses 146 of fusible material. These bosses make it possible to compensate for any dispersions of the thicknesses of the components or of the depth of the depressions etched in the receiving substrate. The areas 142 of the second substrate 140 are simply defined on a copper layer 148 of this substrate. It is indeed a DBC type substrate, like the first substrate 112.
Les plages 142 peuvent cependant être remplacées ou garnies par des plots mouillables comme ceux représentés sur la figure 2, décrite en référence à l'art antérieur.The pads 142 may however be replaced or filled with wettable pads like those shown in FIG. 2, described with reference to the prior art.
Dans l'exemple de la figure 3, une couche de cuivre du deuxième substrat relie à chaque fois deux bornes de contact de chaque composan . Le deuxième substrat peut cependant être pourvu d'un réseau beaucoup plus complexe pour relier les bornes selon un schéma de câblage souhaité.In the example of FIG. 3, a copper layer of the second substrate connects each time two contact terminals of each component. The second substrate can however be provided with a much more complex network for connecting the terminals according to a desired wiring diagram.
On décrit à présent la préparation du substrat de réception 112 en référence aux figures 4 et suivantes . Une première étape, correspondant à la figure 4 montre le dépôt d'un matériau photosensible 150 sur un substrat DBC 112 présentant une couche de céramique 120 intercalée entre deux couches de cuivre 122, 124. La couche de matériau photosensible 150 vient recouvrir les couches de cuivre. Il s'agit par exemple d'un film sec photosensible tel qu'utilisé généralement dans l'industrie du circuit imprimé, ou d'une résine photosensible du type utilisé dans l'industrie de la microélectronique .We now describe the preparation of the receiving substrate 112 with reference to Figures 4 and following. A first step, corresponding to FIG. 4, shows the deposition of a photosensitive material 150 on a DBC substrate 112 having a ceramic layer 120 interposed between two layers of copper 122, 124. The layer of photosensitive material 150 covers the layers of copper. It is for example a dry photosensitive film as generally used in the printed circuit industry, or a photosensitive resin of the type used in the microelectronics industry.
La couche de matériau photosensible peut être déposée par pulvérisation, par centrifugation, ou par laminage .The layer of photosensitive material can be deposited by spraying, by centrifugation, or by rolling.
La figure 5 montre une étape de lithographie lors de laquelle la couche photosensible est insolée selon un motif de lithographie déterminé, puis développée pour en éliminer des parties correspondant à des emplacements de réception de composants. La technique d'insolation, par exemple au moyen d'une lampe UV, et de développement, sont bien connues en soi . Dans l'exemple de la figure 5 la couche photosensible est mise en forme pour être préservée dans une première région de la couche de cuivre 122 et pour être éliminée dans une deuxième région. On observe par ailleurs que la couche photosensible n'est mise en forme que sur l'une des faces du substrat. Il convient de préciser à ce sujet qu'un traitement par les deux faces est également possible.FIG. 5 shows a lithography step during which the photosensitive layer is exposed according to a determined lithography pattern, then developed to eliminate parts corresponding to locations for receiving components. The technique of exposure, for example by means of a UV lamp, and of development, are well known per se. In the example of FIG. 5, the photosensitive layer is shaped to be preserved in a first region of the copper layer 122 and to be eliminated in a second region. It is also observed that the photosensitive layer is only shaped on one of the faces of the substrate. It should be noted in this regard that treatment by two sides is also possible.
Une étape suivante du procédé, illustrée par la figure 6, est la gravure du substrat dans les régions qui ne sont pas protégées par la couche de matériau photosensible 150. La gravure, pratiquée par voie chimique ou par plasma, est interrompue lorsque la profondeur de gravure correspond à la différence d'épaisseur entre les composants devant être reçus sur une partie non gravée du substrat, et ceux devant être reçus sur une partie gravée. Lorsqu'un étagement à niveaux multiples est nécessaire pour recevoir des composants correspondant à plus de deux épaisseurs différentes, les opérations de masquage et de gravure peuvent être répétées. Au terme des gravures, la couche photosensible peut être complètement éliminée comme le montre la figure 6.A next step in the process, illustrated in FIG. 6, is the etching of the substrate in the regions which are not protected by the layer of photosensitive material 150. The etching, carried out by chemical or plasma means, is interrupted when the depth of etching corresponds to the difference in thickness between the components to be received on an unetched part of the substrate, and those to be received on an etched part. When a tiered multiple levels are necessary to receive components corresponding to more than two different thicknesses, the masking and etching operations can be repeated. After the engravings, the photosensitive layer can be completely removed as shown in Figure 6.
A titre de variante, la gravure du substrat peut également avoir lieu par abrasion directe au moyen d'un outil de découpe tel qu'une fraise, par exemple. Dans ce cas aucun masquage par film photosensible n'est nécessaire .As a variant, the etching of the substrate can also take place by direct abrasion by means of a cutting tool such as a milling cutter, for example. In this case no masking by photosensitive film is necessary.
Le substrat peut être pourvu d'une couche d'isolation, indiquée avec la référence 152 sur la figure 7A. La couche d'isolation 152 délimite les plages de réception des composants sur chaque niveau de l' étagement obtenu par la gravure. Elle permet également d'éviter des arcs électriques ultérieurs lorsque les composants sont soumis à une tension électrique . La figure 8A montre la garniture des plages de réception des composants d'un matériau de scellement 132 permettant d'y fixer les composants. Le matériau peut être une colle, conductrice ou non. Dans l'exemple décrit, il s'agit d'un métal fusible, c'est-à-dire un métal pouvant être fondu à basse température, tel que SnPb, ou un alliage à base de ces métaux et/ou à base d'indium. Les techniques retenues pour la mise en place du matériau fusible 132 sont, par exemple, le dépôt électrochimique, la sérigraphie, la dispense automatique à la seringue ou la mise en place de préformes. En particulier, 1 ' électrolyse, adaptée aux substrats incluant une couche conductrice, permet de contrôler avec précision l'épaisseur et la composition du matériau formé. La sérigraphie est adaptée pour le dépôt de matériaux, métalliques ou non, existant sous forme de pâte .The substrate can be provided with an insulation layer, indicated with the reference 152 in FIG. 7A. The insulation layer 152 delimits the reception areas of the components on each level of the tier obtained by etching. It also makes it possible to avoid subsequent electric arcs when the components are subjected to an electrical voltage. FIG. 8A shows the lining of the areas for receiving the components of a sealing material 132 allowing the components to be fixed thereto. The material can be an adhesive, conductive or not. In the example described, it is a fusible metal, that is to say a metal which can be melted at low temperature, such as SnPb, or an alloy based on these metals and / or based on 'indium. The techniques adopted for the installation of the fusible material 132 are, for example, electrochemical deposition, screen printing, automatic dispensing with a syringe or the introduction of preforms. In particular, electrolysis, suitable for substrates including a conductive layer, allows precise control of the thickness and composition of the material formed. Screen printing is suitable for depositing materials, metallic or not, existing in the form of paste.
Les figures 7B et 8B illustrent justement une mise en place du matériau de scellement 132 des composants selon la technique de sérigraphie. Un pochoir de sérigraphie 160 est appliqué à la surface du substrat. Le pochoir présente des ouvertures 162 correspondant aux endroits où du matériau doit être déposé. Le matériau, poussé par une racle de sérigraphie 164 est introduit dans les ouvertures 162, et égalisé à une hauteur uniforme qui correspond à l'épaisseur du pochoir. Le matériau de scellement peut ainsi être utilisé pour former des plots de connexion.Figures 7B and 8B precisely illustrate an installation of the sealing material 132 of the components according to the screen printing technique. A screen printing stencil 160 is applied to the surface of the substrate. The stencil has openings 162 corresponding to the places where material is to be deposited. The material, pushed by a screen printing scraper 164 is introduced into the openings 162, and equalized to a uniform height which corresponds to the thickness of the stencil. The sealing material can thus be used to form connection pads.
La figure 8B montre la mise en place du matériau sur la plage de réception correspondant à la dépression. Le pochoir déborde sur les bords de la dépression et en épouse parfaitement le fond lors du passage de la racle 164.FIG. 8B shows the placement of the material on the reception area corresponding to the vacuum. The stencil overflows on the edges of the depression and perfectly matches the bottom during the passage of the doctor blade 164.
Lorsque le matériau de scellement 132 est en place, les composants peuvent être fixés sur les plages de réception. Cette opération est illustrée par la figure 9 qui correspond à une étape consécutive à celle de la figure 8A.When the sealing material 132 is in place, the components can be fixed on the receiving pads. This operation is illustrated by FIG. 9 which corresponds to a step consecutive to that of FIG. 8A.
On observe que les bornes de contact 122 des composants sont également garnies de billes 146 de matériau fusible. Comme les faces libres des composants sont sensiblement coplanaires il est alors facile de les reporter sur un deuxième substrat présentant une face de réception sensiblement plane. On obtient finalement un module comparable au module de la figure 3, déjà décrite.It is observed that the contact terminals 122 of the components are also lined with balls 146 of fusible material. As the free faces of the components are substantially coplanar, it is then easy to transfer them to a second substrate having a substantially flat receiving face. Finally, a module is obtained comparable to the module of FIG. 3, already described.
Documents citésCited documents
( 1 )(1)
"Power Cycling Reliability of IGBT Power Modules","Power Cycling Reliability of IGBT Power Modules",
V.A. Sankaran, C. Chen, C.S. Avant, et X. Xu,V.A. Sankaran, C. Chen, C.S. Avant, and X. Xu,
IEEE Industry Applications Society, Annual Meeting, New Orléans, Louisiana, 5-9 October 1997. ( 2 )IEEE Industry Applications Society, Annual Meeting, New Orléans, Louisiana, 5-9 October 1997. (2)
"Double-sided Cooling for High Power IGBT Modules using Flip Chip Technology","Double-sided Cooling for High Power IGBT Modules using Flip Chip Technology",
C. Gillot, C. Schaeffer, R. Perret, C. Massit et L. Meysenc,C. Gillot, C. Schaeffer, R. Perret, C. Massit and L. Meysenc,
Proceedings of World Congress on Industrial applications of Electrical Energy and 35th IEEE-IAS Annual Meeting, vol. 5, pages 3016-3020, 8-12 October 2000, Rome, Italie. Proceedings of World Congress on Industrial applications of Electrical Energy and 35th IEEE-IAS Annual Meeting, vol. 5, pages 3016-3020, 8-12 October 2000, Rome, Italy.

Claims

REVENDICATIONS
1. Procédé d'assemblage de composants (110a, 110b) d'épaisseurs différentes sur un substrat de réception (112) , comprenant les étapes successives suivantes : a) la réalisation d'un étagement sur une face de réception du substrat, l' étagement présentant au moins deux plages (130a, 130b) de réception de composants, b) le report des composants sur le substrat en disposant les composants sur les plages de réception en fonction de leur épaisseur, de façon à minimiser des écarts des faces libres (120) des composants dans une direction perpendiculaire aux plages de réception.1. A method of assembling components (110a, 110b) of different thicknesses on a receiving substrate (112), comprising the following successive steps: a) producing a tiering on a receiving face of the substrate, the tier having at least two areas (130a, 130b) for receiving components, b) transferring the components onto the substrate by placing the components on the reception areas as a function of their thickness, so as to minimize deviations from the free faces ( 120) of the components in a direction perpendicular to the receiving ranges.
2. Procédé selon la revendication 1, dans lequel on forme des dépressions de différentes profondeurs en fonction de différentes épaisseurs de composants devant être reportés sur le substrat de réception, et dans lequel on reporte, lors de l'étape b) , chaque composant sur une région de réception du substrat présentant une dépression dont la profondeur est fonction de l'épaisseur dudit composant.2. Method according to claim 1, in which depressions of different depths are formed as a function of different thicknesses of components to be transferred to the receiving substrate, and in which each component is transferred during step b) to a receiving region of the substrate having a depression whose depth is a function of the thickness of said component.
3. Procédé selon la revendication 1, comprenant en outre, après l'étape b) , la mise en contact de la face libre des composants avec un deuxième substrat (140) . 3. Method according to claim 1, further comprising, after step b), bringing the free face of the components into contact with a second substrate (140).
4. Procédé selon la revendication 3, dans lequel on solidarise le deuxième substrat et les composants par l'intermédiaire d'un matériau fusible (146) .4. Method according to claim 3, in which the second substrate and the components are secured by means of a fusible material (146).
5. Procédé selon la revendication 1, comprenant en outre, avant l'étape b) , la mise en place dans les dépressions d'un matériau de scellement (132).5. The method of claim 1, further comprising, before step b), the placing in the depressions of a sealing material (132).
6. Procédé selon la revendication 5, dans lequel la mise en place du matériau de scellement a lieu par sérigraphie.6. The method of claim 5, wherein the establishment of the sealing material takes place by screen printing.
7. Structure intégrée comprenant une pluralité de composants (110a, 110b) présentant des épaisseurs différentes, les composants étant en contact, par une première face avec un premier substrat (112) présentant des plages étagées de réception des composants (130a, 130b) , et, par une deuxième face, opposée à la première face, à un deuxième substrat, avec une plage de réception des composants sensiblement plane.7. Integrated structure comprising a plurality of components (110a, 110b) having different thicknesses, the components being in contact, by a first face with a first substrate (112) having stepped areas for receiving the components (130a, 130b), and, by a second face, opposite the first face, to a second substrate, with a reception area of the components that is substantially planar.
8. Structure selon la revendication 7, dans laquelle l'un des premier et deuxième substrats est essentiellement un substrat de dissipation thermique tandis que l'autre des premier et deuxième substrats est un substrat d'interconnexion. 8. Structure according to claim 7, in which one of the first and second substrates is essentially a heat dissipation substrate while the other of the first and second substrates is an interconnection substrate.
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