WO2002067315A8 - Processes of forming thermal transfer materials, and thermal transfer materials - Google Patents

Processes of forming thermal transfer materials, and thermal transfer materials

Info

Publication number
WO2002067315A8
WO2002067315A8 PCT/US2002/004483 US0204483W WO02067315A8 WO 2002067315 A8 WO2002067315 A8 WO 2002067315A8 US 0204483 W US0204483 W US 0204483W WO 02067315 A8 WO02067315 A8 WO 02067315A8
Authority
WO
WIPO (PCT)
Prior art keywords
thermal transfer
substrate
mass
transfer materials
forming
Prior art date
Application number
PCT/US2002/004483
Other languages
French (fr)
Other versions
WO2002067315A2 (en
WO2002067315A3 (en
Inventor
Nancy F Dean
Anurag Gupta
Original Assignee
Honeywell Int Inc
Nancy F Dean
Anurag Gupta
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Int Inc, Nancy F Dean, Anurag Gupta filed Critical Honeywell Int Inc
Publication of WO2002067315A2 publication Critical patent/WO2002067315A2/en
Publication of WO2002067315A8 publication Critical patent/WO2002067315A8/en
Publication of WO2002067315A3 publication Critical patent/WO2002067315A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3733—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

The invention encompasses a process of forming a thermal transfer material having low volatility. A substrate is provided, and a gelatinous mass is formed on a surface of the substrate. While the gelatinous mass is on the substrate, thermally conductive fibers are inserted into the mass. Subsequently, the gelatinous mass is removed from the substrate. The invention also encompasses a process of forming a thermal transfer material wherein a thermally conductive substrate is provided and a mass is adhered to a surface of the substrate. While the mass is on the substrate, thermally conductive fibers are inserted into the mass. The thermally conductive fibers extend to the surface of the substrate, but do not extend through the substrate. The substrate, mass and fibers together define at least a portion of a thermal transfer material. Additionally, the invention encompasses thermal transfer materials and methods of using thermal materials.
PCT/US2002/004483 2001-02-14 2002-02-14 Processes of forming thermal transfer materials, and thermal transfer materials WO2002067315A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US26957901P 2001-02-14 2001-02-14
US60/269,579 2001-02-14

Publications (3)

Publication Number Publication Date
WO2002067315A2 WO2002067315A2 (en) 2002-08-29
WO2002067315A8 true WO2002067315A8 (en) 2002-10-17
WO2002067315A3 WO2002067315A3 (en) 2003-07-10

Family

ID=23027846

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/004483 WO2002067315A2 (en) 2001-02-14 2002-02-14 Processes of forming thermal transfer materials, and thermal transfer materials

Country Status (1)

Country Link
WO (1) WO2002067315A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE602004006403T2 (en) 2003-04-10 2008-01-10 3M Innovative Properties Co., St. Paul THROUGH HEAT ACTIVATABLE ADHESIVE
US7034403B2 (en) 2003-04-10 2006-04-25 3M Innovative Properties Company Durable electronic assembly with conductive adhesive
US7880298B2 (en) 2007-12-05 2011-02-01 Raytheon Company Semiconductor device thermal connection
US7816785B2 (en) 2009-01-22 2010-10-19 International Business Machines Corporation Low compressive force, non-silicone, high thermal conducting formulation for thermal interface material and package

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998040431A1 (en) * 1997-03-11 1998-09-17 Amoco Corporation Thermally conductive film and method for the preparation thereof
US6436506B1 (en) * 1998-06-24 2002-08-20 Honeywell International Inc. Transferrable compliant fibrous thermal interface
CN1213476C (en) * 1998-06-24 2005-08-03 约翰逊·马太电子公司 Electronic device having fibrous interface
JP2000273196A (en) * 1999-03-24 2000-10-03 Polymatech Co Ltd Heat-conductive resin substrate and semiconductor package
US6311769B1 (en) * 1999-11-08 2001-11-06 Space Systems/Loral, Inc. Thermal interface materials using thermally conductive fiber and polymer matrix materials

Also Published As

Publication number Publication date
WO2002067315A2 (en) 2002-08-29
WO2002067315A3 (en) 2003-07-10

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