WO2002059905A3 - Schmalbandiger spektralfilter und seine verwendung - Google Patents

Schmalbandiger spektralfilter und seine verwendung Download PDF

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Publication number
WO2002059905A3
WO2002059905A3 PCT/EP2002/000762 EP0200762W WO02059905A3 WO 2002059905 A3 WO2002059905 A3 WO 2002059905A3 EP 0200762 W EP0200762 W EP 0200762W WO 02059905 A3 WO02059905 A3 WO 02059905A3
Authority
WO
WIPO (PCT)
Prior art keywords
filter
narrow
ultraviolet light
lighting systems
spectral filter
Prior art date
Application number
PCT/EP2002/000762
Other languages
English (en)
French (fr)
Other versions
WO2002059905A2 (de
Inventor
Marco Wedowski
Original Assignee
Zeiss Carl Semiconductor Mfg
Marco Wedowski
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE10109242A external-priority patent/DE10109242C1/de
Priority claimed from DE2001136620 external-priority patent/DE10136620A1/de
Application filed by Zeiss Carl Semiconductor Mfg, Marco Wedowski filed Critical Zeiss Carl Semiconductor Mfg
Priority to JP2002560142A priority Critical patent/JP2004524524A/ja
Priority to US10/466,961 priority patent/US7154666B2/en
Priority to EP02719727A priority patent/EP1356476B1/de
Priority to DE50207927T priority patent/DE50207927D1/de
Publication of WO2002059905A2 publication Critical patent/WO2002059905A2/de
Publication of WO2002059905A3 publication Critical patent/WO2002059905A3/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70158—Diffractive optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/10—Scattering devices; Absorbing devices; Ionising radiation filters

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Optical Filters (AREA)

Abstract

Um die Strahlenbelastung optischer Elemente beim Einsatz von extrem ultravioletten Licht zu verringern, soll ein optischer Filter (10) bereitgestellt werden, der einfach im Aufbau ist und ein Wellenlängenband bestimmter Breite vorselektiert. Dies wird durch einen optischen Filter (10) erreicht, der aus mindestens einer zwischen zwei Siliziumschichten (2) angerodnete Zirkonium-, Niob- oder Molybdänschicht (1a, b) besteht, erreicht. Zur Erhöhung der mechanischen Stabilität und der Lebensdauer und zur weiteren Einengung der spektralen Charakteristik können sich noch jeweils zwei Ruthenium- oder Rhodiumschichten an die Siliziumschichten anschließen. Derartige Filter (10) werden insbesondere in Beleuchtungssystemen und Projektionsbelichtungsanlagen für extrem ultraviolettes Licht verwendet, die der Halbleiterlithographie dienen.
PCT/EP2002/000762 2001-01-26 2002-01-25 Schmalbandiger spektralfilter und seine verwendung WO2002059905A2 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2002560142A JP2004524524A (ja) 2001-01-26 2002-01-25 狭周波数帯分光フィルタおよびその用途
US10/466,961 US7154666B2 (en) 2001-01-26 2002-01-25 Narrow-band spectral filter and the use thereof
EP02719727A EP1356476B1 (de) 2001-01-26 2002-01-25 Schmalbandiger spektralfilter und seine verwendung
DE50207927T DE50207927D1 (de) 2001-01-26 2002-01-25 Schmalbandiger spektralfilter und seine verwendung

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
DE10103738 2001-01-26
DE10103738.4 2001-01-26
DE10109242.3 2001-02-26
DE10109242A DE10109242C1 (de) 2001-01-26 2001-02-26 Schmalbandiger Spektralfilter und seine Verwendung
DE10136620.5 2001-07-19
DE2001136620 DE10136620A1 (de) 2001-07-19 2001-07-19 Schmalbandiger Spektralfilter und seine Verwendung

Publications (2)

Publication Number Publication Date
WO2002059905A2 WO2002059905A2 (de) 2002-08-01
WO2002059905A3 true WO2002059905A3 (de) 2002-09-26

Family

ID=27214252

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2002/000762 WO2002059905A2 (de) 2001-01-26 2002-01-25 Schmalbandiger spektralfilter und seine verwendung

Country Status (5)

Country Link
US (1) US7154666B2 (de)
EP (1) EP1356476B1 (de)
JP (1) JP2004524524A (de)
DE (1) DE50207927D1 (de)
WO (1) WO2002059905A2 (de)

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US7456932B2 (en) 2003-07-25 2008-11-25 Asml Netherlands B.V. Filter window, lithographic projection apparatus, filter window manufacturing method, device manufacturing method and device manufactured thereby
EP1656591B1 (de) * 2003-08-13 2011-07-06 Philips Intellectual Property & Standards GmbH Verfahren zum zurückhalten einer in einer strahlungsquelle erzeugten substanz mit hilfe eines filters
JP2006126234A (ja) * 2004-10-26 2006-05-18 Sony Corp 撮像装置、光量調整機構、光量制御羽根及び光量制御羽根の製造方法
US7372623B2 (en) * 2005-03-29 2008-05-13 Asml Netherlands B.V. Multi-layer spectral purity filter, lithographic apparatus including such a spectral purity filter, device manufacturing method, and device manufactured thereby
JP2007027212A (ja) * 2005-07-12 2007-02-01 Canon Inc フィルター、露光装置及びデバイス製造方法
US7948675B2 (en) 2005-10-11 2011-05-24 Nikon Corporation Surface-corrected multilayer-film mirrors with protected reflective surfaces, exposure systems comprising same, and associated methods
CN100357768C (zh) * 2006-01-12 2007-12-26 中国科学院上海光学精密机械研究所 13.5nm极紫外滤波器的制作方法
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US8018578B2 (en) * 2007-04-19 2011-09-13 Asml Netherlands B.V. Pellicle, lithographic apparatus and device manufacturing method
US20080259298A1 (en) * 2007-04-19 2008-10-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
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US20080257883A1 (en) 2007-04-19 2008-10-23 Inbev S.A. Integrally blow-moulded bag-in-container having an inner layer and the outer layer made of the same material and preform for making it
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DE102008041436A1 (de) * 2007-10-02 2009-04-09 Carl Zeiss Smt Ag Optisches Membranelement
DE102008028868A1 (de) * 2008-06-19 2009-12-24 Carl Zeiss Smt Ag Optische Baugruppe
EP2326990B1 (de) 2008-07-11 2013-03-13 ASML Netherlands BV Spektraler reinheitsfilter, strahlungsquelle, lithografischer apparat und verfahren zur herstellung einer vorrichtung
CN102099747B (zh) * 2008-08-14 2013-06-19 Asml荷兰有限公司 辐射源、光刻设备以及器件制造方法
DE102008041801A1 (de) 2008-09-03 2010-03-04 Carl Zeiss Smt Ag Spektralfilter für die EUV-Mikrolithographie
JP5394808B2 (ja) * 2009-04-22 2014-01-22 信越化学工業株式会社 リソグラフィ用ペリクルおよびその製造方法
CN102414622A (zh) * 2009-04-27 2012-04-11 Asml荷兰有限公司 光刻设备和检测器设备
DE102010041258A1 (de) * 2010-09-23 2012-03-29 Carl Zeiss Smt Gmbh Beleuchtungsoptik mit einem beweglichen Filterelement
JP5741283B2 (ja) * 2010-12-10 2015-07-01 旭硝子株式会社 赤外光透過フィルタ及びこれを用いた撮像装置
DE102011076011A1 (de) * 2011-05-18 2012-11-22 Carl Zeiss Smt Gmbh Reflektives optisches Element und optisches System für die EUV-Lithographie
DE102012203959A1 (de) 2012-03-14 2013-09-19 Carl Zeiss Smt Gmbh Optisches System einer mikrolithographischen Projektionsbelichtungsanlage
JP6137179B2 (ja) 2011-07-26 2017-05-31 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置の光学系及びマイクロリソグラフィ露光方法
DE102011079837A1 (de) 2011-07-26 2013-01-31 Carl Zeiss Smt Gmbh Optisches System einer mikrolithographischen Projektionsbelichtungsanlage, sowie mikrolithographisches Belichtungsverfahren
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Also Published As

Publication number Publication date
EP1356476B1 (de) 2006-08-23
DE50207927D1 (de) 2006-10-05
JP2004524524A (ja) 2004-08-12
US20040061930A1 (en) 2004-04-01
WO2002059905A2 (de) 2002-08-01
US7154666B2 (en) 2006-12-26
EP1356476A2 (de) 2003-10-29

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