WO2002058876A1 - Method for producing a connection, device and a power semiconductor component - Google Patents

Method for producing a connection, device and a power semiconductor component Download PDF

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Publication number
WO2002058876A1
WO2002058876A1 PCT/DE2002/000231 DE0200231W WO02058876A1 WO 2002058876 A1 WO2002058876 A1 WO 2002058876A1 DE 0200231 W DE0200231 W DE 0200231W WO 02058876 A1 WO02058876 A1 WO 02058876A1
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WO
WIPO (PCT)
Prior art keywords
contact surface
connection
connecting means
power semiconductor
semiconductor component
Prior art date
Application number
PCT/DE2002/000231
Other languages
German (de)
French (fr)
Inventor
Wilfried Reschnar
Manfred Nickel
Frank-Dieter Hauschild
Antonius Hamsen
Carsten Graf
Bernd Rautzenberg
Original Assignee
Robert Bosch Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch Gmbh filed Critical Robert Bosch Gmbh
Publication of WO2002058876A1 publication Critical patent/WO2002058876A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys

Definitions

  • Soldering methods are known, in which soldering tablets (pallets) are connected in a vacuum soldering furnace at approximately 400 ° C. as a connecting means for soldering power semiconductor components on heat sinks. In this case, no flux is used, but forming gas, which consists of hydrogen and nitrogen and at the specified
  • the solder gap thickness is approximately 30 to 40 ⁇ m.
  • solder is used as the connecting means, which comprises solvent or flux.
  • solder is used as the connecting means, which comprises solvent or flux.
  • Power semiconductor component with a heat sink have the advantage that a clean and void-free connection between the semiconductor and heat sink is also possible by means of the less complex method. This enables maximum thermal conductivity between the components to be soldered to one another. Furthermore, a small layer thickness of the connecting means, i.e. the solder layer, possible.
  • connection means remains void-free, which further increases the thermal conductivity. Furthermore, it is possible to carry out the connection according to the invention on standard production machines, for example SMD lines, which further reduces the costs. Furthermore, it is possible to use approximately 250 ° C. as the soldering temperature in the connection according to the invention and thus a comparatively low soldering temperature.
  • FIG. 1 shows a device according to the invention with a connection according to the invention.
  • the first component 10 is in particular a power semiconductor component 10 and is referred to as such below.
  • the second component 20 is, in particular, a heat sink and is referred to below as such.
  • the semiconductor component 10 comprises a first contact area .11 and the cooling body 20 comprises a second contact area -19 .
  • the second contact surface 19 has a first region 21 and a second region 22.
  • the connection according to the invention is established between the first contact surface 11 and the second contact surface 19 by a connecting means 8.
  • solder paste or flux paste containing flux is provided as the connecting means 8.
  • the connecting means 8 runs between the first contact surface 11 and the second contact surface 19 as a layer of a certain thickness, which is provided with the reference symbol 9 in FIG.
  • the second component 20 is an electrically conductive layer on a printed circuit board 5.
  • the conditions essential according to the invention are the same in both cases.
  • a certain amount of the connecting means 8 is applied to the second contact surface 19 in the first region 21. Furthermore, the semiconductor component 10 is relative to the second region 22 of the second contact surface 19 positioned. This can be done, for example, by placing the first contact surface 11 on the second region 22 of the second contact surface 19 or by positioning, for example by means of a positioning tool (not shown), the first
  • Component 10 relative to the second component 20 such that a defined distance or gap between the first contact surface 11 and the second region 22 of the second contact surface 19 is established.
  • the entire arrangement is then heated, in particular in a soldering furnace or in a standard production machine such as, for example, an SMD line, to the soldering temperature of, for example, approximately 250.degree. C., the specific amount of the connecting means 8, which also includes, for example, one before the melting process Takes shape, which is represented by the dashed line denoted by the reference numeral 7, melts.
  • the specific quantity 7 of connecting means 8 to the gap formed by the positioning of the semiconductor component 10 between the first contact surface 11 and the second
  • the capillary effect of the gap causes the connecting means 8 to creep between the first contact surface 11 and the second contact surface 19.
  • the gap between the first contact surface 11 and the second contact surface 19 is largely filled without, however, containing gas bubbles of flux or solvent or chemical reaction products.
  • the result is a largely void-free solder layer with a small layer thickness or thickness 9 of approximately 30 ⁇ m. The gas bubbles and the possibly void-forming parts of the solder or
  • Connection means 8 remain in the first region 21 next to the semiconductor component 10.
  • the first area 21 and the second area 22 can be provided slightly overlapping, so that there is a better, faster and / or safer formation of the capillary action of the above-mentioned type.
  • the method according to the invention is intended in particular as a soft solder method.
  • layer thicknesses or thicknesses 9 of 30 to 50 ⁇ m are particularly suitable according to the invention.
  • the device according to the invention with a connection according to the invention which is produced by the method described above, has in particular the property that the connecting means 8 between the contact surfaces 11, 19 by a capillary action in another
  • connection according to the invention is used in particular for better heat dissipation between power semiconductor 10 and heat sink 20.

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)

Abstract

The invention relates to a method for producing a connection, a device and a power semiconductor component. A connection is produced between a first contact surface (11) and a second contact surface (19). The second contact surface (19) comprises a first area (21) and the second contact surface (19) comprises a second area (22). A connecting means (8) is applied to the second contact surface (19) in the first area (21). The first contact surface (11) is positioned in relation to the second area (22) and the connecting means (8) is melted in order to produce said connection.

Description

Verfahren zur Herstellung einer Verbindung, Vorrichtung und LeistungshalbleiterbauelementMethod for producing a connection, device and power semiconductor component
Stand der TechnikState of the art
Bekannt sind Lötverfahren, wobei Lottabletten (Pallets) in einem Vakuum-Löthofen bei ca. 400 °C als Verbindungsmittel zur Lotung von Leistungshalbleiterbauelementen auf Kühlkörpern Verbindung finden. Hierbei werden keine Flußmittel eingesetzt, sondern Formiergas, welches aus Wasserstoff und Stickstoff besteht und bei der angegebenenSoldering methods are known, in which soldering tablets (pallets) are connected in a vacuum soldering furnace at approximately 400 ° C. as a connecting means for soldering power semiconductor components on heat sinks. In this case, no flux is used, but forming gas, which consists of hydrogen and nitrogen and at the specified
Temperatur eine genügend reduzierende Wirkung hat . Ergebnis dieses Lötvorgangs ist eine weitgehend lunkerfreie und saubere Verbindung zwischen Halbleiter und Kühlkörper. Die Lotspaltdicke beträgt etwa 30 bis 40 μm.Temperature has a sufficiently reducing effect. The result of this soldering process is a largely void-free and clean connection between the semiconductor and the heat sink. The solder gap thickness is approximately 30 to 40 μm.
Weiterhin ist ein herkömmlicher Lötvorgang, insbesondere unter Stickstoff tmosphäre bekannt, bei dem als Verbindungsmittel Lot eingesetzt wird, das Lösemittel bzw. Flußmittel umfasst. Ergebnis eines solchen Lötvorgangs ist, dass das Verbindungsmittel mit Gasblasen undFurthermore, a conventional soldering process, in particular under a nitrogen atmosphere, is known, in which solder is used as the connecting means, which comprises solvent or flux. The result of such a soldering process is that the connection means with gas bubbles and
Reaktionsprodukten durchsetzt ist, was einerseits die Lotspaltdicke vergrößert und andererseits den Wärmefluß behindert .Reaction products is penetrated, which on the one hand increases the solder gap thickness and on the other hand hinders the heat flow.
Das erstgenannte Verfahren ist aufwendig und teuer. Vorteile der ErfindungThe former method is complex and expensive. Advantages of the invention
Das erfindungsgemäße Verfahren zur Herstellung einer Verbindung, die Vorrichtung und dasThe inventive method for making a connection, the device and the
Leistungshalbleiterbauelement mit einem Kühlkörper gemäß den nebengeordneten Ansprüchen haben demgegenüber den Vorteil, dass eine saubere und lunkerfreie Verbindung zwischen Halbleiter und Kühlkörper auch mittels des weniger aufwendigen Verfahrens möglich wird. Hierdurch ist eine maximale Wärmeleitfähigkeit zwischen den miteinander zu verlötenden Bauelementen möglich. Weiterhin ist eine geringe Schichtdicke des Verbindungsmittels, d.h. der Lotschicht, möglich.Power semiconductor component with a heat sink according to the independent claims have the advantage that a clean and void-free connection between the semiconductor and heat sink is also possible by means of the less complex method. This enables maximum thermal conductivity between the components to be soldered to one another. Furthermore, a small layer thickness of the connecting means, i.e. the solder layer, possible.
Das Verbindungsmittel bleibt weiterhin lunkerfrei, was weiterhin die Wärmeleitfähigkeit erhöht . Weiterhin ist es möglich, die erfindungsgemäße Verbindung auf Standard- Fertigungsmaschinen, beispielsweise SMD-Linien, durchzuführen, was weiterhin die Kosten senkt. Weiterhin ist es möglich, bei der erfindungsgemäßen Verbindung als Löttemperatur ca. 250 °C und damit eine vergleichsweise geringe Löttemperatur zu verwenden.The connection means remains void-free, which further increases the thermal conductivity. Furthermore, it is possible to carry out the connection according to the invention on standard production machines, for example SMD lines, which further reduces the costs. Furthermore, it is possible to use approximately 250 ° C. as the soldering temperature in the connection according to the invention and thus a comparatively low soldering temperature.
Durch die in den Unteransprüchen aufgeführten Maßnahmen sind vorteilhafte Weiterbildungen und Verbesserungen der in den nebengeordneten Ansprüchen angegebenen Verfahren, der Vorrichtung und des Leistungshalbleiterbauelementes möglich.The measures listed in the subclaims permit advantageous developments and improvements of the methods, the device and the power semiconductor component specified in the independent claims.
Zeichnungdrawing
Ein Ausführungsbeispiel der Erfindung ist in der Zeichnung dargestellt und in der nachfolgenden Beschreibung näher erläutert . Es zeigt Figur 1 eine erfindungsgemäße Vorrichtung mit einer erfindungsgemäßen Verbindung.An embodiment of the invention is shown in the drawing and explained in more detail in the following description. It shows 1 shows a device according to the invention with a connection according to the invention.
Beschreibung des AusführungsbeispielsDescription of the embodiment
In Figur 1 ist eine erfindungsgemäße Verbindung zwischen einem ersten Bauteil 10 und einem zweiten Bauteil 20 dargestellt. Das erste Bauteil 10 ist erfindungsgemäß insbesondere ein Leistungshalbleiterbauelement 10 und wird im Folgenden als solches bezeichnet. Das zweite Bauteil 20 ist erfindungsgemäß insbesondere ein Kühlkörper und wird im Weiteren als solcher bezeichnet. Das Halbleiterbauelement 10 umfasst eine erste Kontaktfläche .11 und der Kühlkörper 20 umfasst eine zweite Kontaktfläche -19.. Die zweite Kontaktfläche 19 weist einen ersten Bereich 21 und einen zweiten Bereich 22 auf. Die erfindungsgemäße Verbindung wird zwischen der ersten Kontaktflache 11 und der zweiten Kontaktfläche 19 durch ein Verbindungsmittel 8 hergestellt. Als Verbindungsmittel 8 ist dabei erfindungsgemäß insbesondere Lotpaste bzw. flussmittelhaltige Lotpaste vorgesehen. Hierbei verläuft das Verbindungsmittel 8 zwischen der ersten Kontaktfläche 11 und der zweiten Kontaktfläche 19 als Schicht einer bestimmten Dicke, welche in der Figur 1 mit dem Bezugszeichen 9 versehen ist. In einer alternativen Aus ührungsform ist das zweite Bauteil 20 eine elektrisch leitfähige Schicht auf einer Leiterplatte 5. Die erfindungsgemäß wesentlichen Verhältnisse sind jedoch in beiden Fällen die gleichen.1 shows a connection according to the invention between a first component 10 and a second component 20. According to the invention, the first component 10 is in particular a power semiconductor component 10 and is referred to as such below. According to the invention, the second component 20 is, in particular, a heat sink and is referred to below as such. The semiconductor component 10 comprises a first contact area .11 and the cooling body 20 comprises a second contact area -19 . , The second contact surface 19 has a first region 21 and a second region 22. The connection according to the invention is established between the first contact surface 11 and the second contact surface 19 by a connecting means 8. According to the invention, in particular solder paste or flux paste containing flux is provided as the connecting means 8. Here, the connecting means 8 runs between the first contact surface 11 and the second contact surface 19 as a layer of a certain thickness, which is provided with the reference symbol 9 in FIG. In an alternative embodiment, the second component 20 is an electrically conductive layer on a printed circuit board 5. However, the conditions essential according to the invention are the same in both cases.
Erfindungsgemäß wird beim Verfahren zur Herstellung der erfindungsgemäßen Verbindung zwischen der ersten Kontaktfläche 11 und der zweiten Kontaktfläche 19 eine bestimmte Menge des Verbindungsmittels 8 im ersten Bereich 21 auf die zweite Kontaktfläche 19 aufgebracht. Weiterhin wird das Halbleiterbauelement 10 relativ zum zweiten Bereich 22 der zweiten Kontaktfläche 19 positioniert. Dies kann beispielsweise durch Auflegen der ersten Kontaktfläche 11 auf den zweiten Bereich 22 der zweiten Kontaktfläche 19 oder auch durch Positionieren, beispielsweise mittels eines Positionierungswerkzeugs (nicht dargestellt) , des erstenAccording to the invention, in the method for producing the connection according to the invention between the first contact surface 11 and the second contact surface 19, a certain amount of the connecting means 8 is applied to the second contact surface 19 in the first region 21. Furthermore, the semiconductor component 10 is relative to the second region 22 of the second contact surface 19 positioned. This can be done, for example, by placing the first contact surface 11 on the second region 22 of the second contact surface 19 or by positioning, for example by means of a positioning tool (not shown), the first
Bauteils 10 relativ zum zweiten Bauteil 20 derart, dass sich ein definierter Abstand bzw. Spalt zwischen der ersten Kontaktfläche 11 und dem zweiten Bereich 22 der zweiten Kontaktfläche 19 einstellt. Die gesamte Anordnung wird dann, insbesondere in einem Lötofen bzw. in einer Standard- Fertigungsmaschine wie beispielsweise einer SMD-Linie auf die Löttemperatur von beispielsweise ca. 250°C erwärmt, wobei die bestimmte Menge des Verbindungsmittels 8 , welche vor dem AufSchmelzvorgang auch beispielsweise eine Form annimmt, die durch die mit dem Bezugszeichen 7 versehene gestrichelte Linie dargestellt ist, aufschmilzt. Durch den AufschmelzVorgang und die räumliche Nähe der bestimmten Menge 7 an Verbindungsmittel 8 zu dem sich durch die Positionierung des Halbleiterbauelementes 10 entstehenden Spaltes zwischen der ersten Kontaktfläche 11 und der zweitenComponent 10 relative to the second component 20 such that a defined distance or gap between the first contact surface 11 and the second region 22 of the second contact surface 19 is established. The entire arrangement is then heated, in particular in a soldering furnace or in a standard production machine such as, for example, an SMD line, to the soldering temperature of, for example, approximately 250.degree. C., the specific amount of the connecting means 8, which also includes, for example, one before the melting process Takes shape, which is represented by the dashed line denoted by the reference numeral 7, melts. As a result of the melting process and the spatial proximity of the specific quantity 7 of connecting means 8 to the gap formed by the positioning of the semiconductor component 10 between the first contact surface 11 and the second
Kontaktfläche 19 bewirkt der Kapillareffekt des Spaltes, dass das Verbindungsmittel 8 zwischen die erste Kontaktfläche 11 und die zweite Kontaktfläche 19 kriecht. Hierdurch wird der Spalt zwischen der ersten Kontaktfläche 11 und der zweiten Kontaktfläche 19 weitgehend aufgefüllt, ohne jedoch Gasblasen von Flußmittel bzw. Lösemittel bzw. chemischer Reaktionsprodukte zu enthalten. Die Folge ist eine weitgehend lunkerfreie Lotschicht bei geringer Schichtdicke bzw. Dicke 9 von etwa 30 μτtι. Die Gasblasen und die möglicherweise lunkerbildenden Teile des Lotes bzw. desContact surface 19, the capillary effect of the gap causes the connecting means 8 to creep between the first contact surface 11 and the second contact surface 19. As a result, the gap between the first contact surface 11 and the second contact surface 19 is largely filled without, however, containing gas bubbles of flux or solvent or chemical reaction products. The result is a largely void-free solder layer with a small layer thickness or thickness 9 of approximately 30 μm. The gas bubbles and the possibly void-forming parts of the solder or
Verbindungsmittels 8 verbleiben dabei im ersten Bereich 21 neben dem Halbleiterbauelement 10.Connection means 8 remain in the first region 21 next to the semiconductor component 10.
In einer vorteilhaften Ausführungsform des erfindungsgemäßen Verfahrens kann der erste Bereich 21 und der zweite Bereich 22 leicht überlappend vorgesehen sein, so dass es zu einer besseren, schnelleren und/oder sichereren Ausbildung der Kapillarwirkung der .obengenannten Art kommt.In an advantageous embodiment of the method according to the invention, the first area 21 and the second area 22 can be provided slightly overlapping, so that there is a better, faster and / or safer formation of the capillary action of the above-mentioned type.
Das erfindungsgemäße Verfahren ist insbesondere als Weichlotverfahren vorgesehen.The method according to the invention is intended in particular as a soft solder method.
Als Schichtdicken, kommen erfindungsgemäß insbesondere Schichtdicken bzw. Dicken 9 von 30 bis 50 μm in Frage.As layer thicknesses, layer thicknesses or thicknesses 9 of 30 to 50 μm are particularly suitable according to the invention.
Die erfindungsgemäße Vorrichtung mit einer erfindungsgemäßen Verbindung, die nach dem oben beschriebenen Verfahren hergestellt- ist, weist insbesondere die Eigenschaft auf, dass das Verbindungsmittel 8 zwischen den Kontaktflächen 11, 19 durch Kapillarwirkung bei einem weiterenThe device according to the invention with a connection according to the invention, which is produced by the method described above, has in particular the property that the connecting means 8 between the contact surfaces 11, 19 by a capillary action in another
AufschmelzVorgang nicht oder nur unwesentlich veränderbar ist .Melting process is not or only insignificantly changeable.
Die erfindungsgemäße Verbindung dient insbesondere der besseren Wärmeableitung zwischen Leistungshalbleiter 10 und Kühlkörper 20. The connection according to the invention is used in particular for better heat dissipation between power semiconductor 10 and heat sink 20.

Claims

AnsprücheAnsprüche claims claims
1. Verfahren zur Herstellung einer Verbindung' zwischen einer ersten Kontaktfläche (11) und einer zweiten Kontaktfläche (19) , wobei die zweite Kontaktfläche (19) einen ersten Bereich (21) aufweist und wobei die zweite Kontaktfläche (19) einen zweiten Bereich (22) aufweist, wobei ein Verbindungsmittel (8) im ersten Bereich (21) auf die zweite Kontaktfläche (19) aufgebracht wird, wobei die erste Kontaktfläche (11) relativ zum zweiten Bereich (22) positioniert wird und wobei das Verbindungsmittel (8) aufgeschmolzen wird, was die Verbindung herstellt.1. A method for producing a connection ' between a first contact surface (11) and a second contact surface (19), the second contact surface (19) having a first region (21) and the second contact surface (19) having a second region (22 ), wherein a connecting means (8) is applied to the second contact surface (19) in the first region (21), the first contact surface (11) is positioned relative to the second region (22) and the connecting means (8) is melted what makes the connection.
2. Verfahren nach Anspruch 1, dadurch gekennzeichnet, dass das Verbindungsmittel (8) Lot ist.2. The method according to claim 1, characterized in that the connecting means (8) is solder.
3. Verfahren nach Anspruch 2, dadurch gekennzeichnet, dass das Verbindungsmittel (8) Flußmittel umfaßt.3. The method according to claim 2, characterized in that the connecting means (8) comprises flux.
4. Verfahren nach einem der vorhergehenden Ansprüche , dadurch gekennzeichnet, dass die erste Kontaktfläche (11) Teil eines Leistungshalbleiters (10) ist. 4. The method according to any one of the preceding claims, characterized in that the first contact surface (11) is part of a power semiconductor (10).
5. Verfahren nach einem der vorhergehenden Ansprüche , dadurch gekennzeichnet, dass die zweite Kontaktfläche (19) Teil eines Kühlkörpers (20) ist.5. The method according to any one of the preceding claims, characterized in that the second contact surface (19) is part of a heat sink (20).
6. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die Verbindung thermisch und/oder elektrisch leitend ausgebildet ist.6. The method according to any one of the preceding claims, characterized in that the connection is thermally and / or electrically conductive.
7. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die Temperatur beim7. The method according to any one of the preceding claims, characterized in that the temperature at
Aufschmelzen des Verbindungsmittels (8) ca. 250 °C beträgt.Melt the connecting means (8) is about 250 ° C.
8. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die Schichtdicke des Verbindungsmittels (8) bei ca. 30μm liegt.8. The method according to any one of the preceding claims, characterized in that the layer thickness of the connecting means (8) is approximately 30 microns.
9. Vorrichtung mit einer Verbindung, wobei die Verbindung nach einem Verfahren gemäß einem der vorhergehenden Ansprüche hergestellt ist.9. Device with a connection, the connection being produced by a method according to one of the preceding claims.
10. Leistungshalbleiterbauelement (10) mit einem Kühlkörper (20) , wobei eine Verbindung zwischen dem10. Power semiconductor component (10) with a heat sink (20), with a connection between the
Leistungshalbleiterbauelement (10) und dem Kühlkörper (20) gemäß einem Verfahren nach einem der Ansprüche 1 bis 9 hergestellt ist. Power semiconductor component (10) and the heat sink (20) is produced according to a method according to one of claims 1 to 9.
PCT/DE2002/000231 2001-01-26 2002-01-24 Method for producing a connection, device and a power semiconductor component WO2002058876A1 (en)

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DE10103397 2001-01-26
DE10103397.4 2001-01-26

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US3706915A (en) * 1970-03-09 1972-12-19 Gen Electric Semiconductor device with low impedance bond
US3786556A (en) * 1970-12-15 1974-01-22 Philips Corp Mounting semiconductor bodies
US4927069A (en) * 1988-07-15 1990-05-22 Sanken Electric Co., Ltd. Soldering method capable of providing a joint of reduced thermal resistance
DE3937810C1 (en) * 1989-11-14 1991-03-07 Eupec Europaeische Gesellschaft Fuer Leistungshalbleiter Mbh & Co Kg, 4788 Warstein, De Carrier plate with soft-soldered circuit substrate - has spacing wires of approximately same coefft. of thermal expansion as solder to limit loading of substrate

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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US3786556A (en) * 1970-12-15 1974-01-22 Philips Corp Mounting semiconductor bodies
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