WO2002056417A3 - Tunable structure utilizing a compliant substrate - Google Patents

Tunable structure utilizing a compliant substrate Download PDF

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Publication number
WO2002056417A3
WO2002056417A3 PCT/US2001/046906 US0146906W WO02056417A3 WO 2002056417 A3 WO2002056417 A3 WO 2002056417A3 US 0146906 W US0146906 W US 0146906W WO 02056417 A3 WO02056417 A3 WO 02056417A3
Authority
WO
WIPO (PCT)
Prior art keywords
monocrystalline
compliant substrate
structure utilizing
high quality
tunable structure
Prior art date
Application number
PCT/US2001/046906
Other languages
French (fr)
Other versions
WO2002056417A2 (en
Inventor
Kurt W Eisenbeiser
Nada A El-Zein
E James Prendergast
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Priority to AU2002228851A priority Critical patent/AU2002228851A1/en
Publication of WO2002056417A2 publication Critical patent/WO2002056417A2/en
Publication of WO2002056417A3 publication Critical patent/WO2002056417A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
    • H01Q3/44—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the electric or magnetic characteristics of reflecting, refracting, or diffracting devices associated with the radiating element

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

A highly tunable structure (20) can be monolithically integrated upon a monocrystalline semiconductor substrate (22) according to the structure and process described herein. High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates (22) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An amorphous interface layer (28) dissipates strain and permits the growth of a high quality monocrystalline buffer layer (24).
PCT/US2001/046906 2001-01-11 2001-12-06 Tunable structure utilizing a compliant substrate WO2002056417A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2002228851A AU2002228851A1 (en) 2001-01-11 2001-12-06 Tunable structure utilizing a compliant substrate

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US75872301A 2001-01-11 2001-01-11
US09/758,723 2001-01-11

Publications (2)

Publication Number Publication Date
WO2002056417A2 WO2002056417A2 (en) 2002-07-18
WO2002056417A3 true WO2002056417A3 (en) 2002-11-21

Family

ID=25052831

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/046906 WO2002056417A2 (en) 2001-01-11 2001-12-06 Tunable structure utilizing a compliant substrate

Country Status (3)

Country Link
AU (1) AU2002228851A1 (en)
TW (1) TW513774B (en)
WO (1) WO2002056417A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10410983B2 (en) * 2015-12-22 2019-09-10 Intel Corporation Microelectronic devices designed with high frequency communication devices including compound semiconductor devices integrated on an inter die fabric on package

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5270298A (en) * 1992-03-05 1993-12-14 Bell Communications Research, Inc. Cubic metal oxide thin film epitaxially grown on silicon
US5283462A (en) * 1991-11-04 1994-02-01 Motorola, Inc. Integrated distributed inductive-capacitive network
US5427988A (en) * 1993-06-09 1995-06-27 The United States Of America As Represented By The Secretary Of The Army Ceramic ferroelectric composite material - BSTO-MgO
US5635433A (en) * 1995-09-11 1997-06-03 The United States Of America As Represented By The Secretary Of The Army Ceramic ferroelectric composite material-BSTO-ZnO
WO1998020606A2 (en) * 1996-10-25 1998-05-14 Superconducting Core Technologies, Inc. Tunable dielectric flip chip varactors
US6103403A (en) * 1997-05-15 2000-08-15 University Of Kentucky Research Foundation Intellectual Property Development Clathrate structure for electronic and electro-optic applications

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5283462A (en) * 1991-11-04 1994-02-01 Motorola, Inc. Integrated distributed inductive-capacitive network
US5270298A (en) * 1992-03-05 1993-12-14 Bell Communications Research, Inc. Cubic metal oxide thin film epitaxially grown on silicon
US5427988A (en) * 1993-06-09 1995-06-27 The United States Of America As Represented By The Secretary Of The Army Ceramic ferroelectric composite material - BSTO-MgO
US5635433A (en) * 1995-09-11 1997-06-03 The United States Of America As Represented By The Secretary Of The Army Ceramic ferroelectric composite material-BSTO-ZnO
WO1998020606A2 (en) * 1996-10-25 1998-05-14 Superconducting Core Technologies, Inc. Tunable dielectric flip chip varactors
US6103403A (en) * 1997-05-15 2000-08-15 University Of Kentucky Research Foundation Intellectual Property Development Clathrate structure for electronic and electro-optic applications

Also Published As

Publication number Publication date
WO2002056417A2 (en) 2002-07-18
AU2002228851A1 (en) 2002-07-24
TW513774B (en) 2002-12-11

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