WO2002043120A3 - Semiconductor laser element and method for producing such a semiconductor laser element - Google Patents

Semiconductor laser element and method for producing such a semiconductor laser element Download PDF

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Publication number
WO2002043120A3
WO2002043120A3 PCT/DE2001/004395 DE0104395W WO0243120A3 WO 2002043120 A3 WO2002043120 A3 WO 2002043120A3 DE 0104395 W DE0104395 W DE 0104395W WO 0243120 A3 WO0243120 A3 WO 0243120A3
Authority
WO
WIPO (PCT)
Prior art keywords
laser element
semiconductor laser
produced
semiconductor
lattice constant
Prior art date
Application number
PCT/DE2001/004395
Other languages
German (de)
French (fr)
Other versions
WO2002043120A2 (en
Inventor
Henning Riechert
Original Assignee
Infineon Technologies Ag
Henning Riechert
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag, Henning Riechert filed Critical Infineon Technologies Ag
Publication of WO2002043120A2 publication Critical patent/WO2002043120A2/en
Publication of WO2002043120A3 publication Critical patent/WO2002043120A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/021—Silicon based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3072—Diffusion blocking layer, i.e. a special layer blocking diffusion of dopants
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation

Abstract

The invention relates to a semiconductor laser element that comprises a first semiconductor layer system (102, 103), produced on a substrate (101) by epitaxial growth, of a first material that has a lattice constant that is different from the lattice constant of the substrate. A quantification layer (104) that has a higher lattice constant than the lattice constant of the first semiconductor is produced on the first semiconductor material by epitaxial growth in such a manner that a quantification effect is produced in the quantification layer (104) that suppresses or strongly inhibits the diffusion of the charged particles. A second semiconductor layer system (105, 106, 107) is produced on the quantification layer by epitaxial growth. Nothing to translate
PCT/DE2001/004395 2000-11-24 2001-11-22 Semiconductor laser element and method for producing such a semiconductor laser element WO2002043120A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10058444.6 2000-11-24
DE10058444A DE10058444A1 (en) 2000-11-24 2000-11-24 Semiconductor laser element and method for producing a semiconductor laser element

Publications (2)

Publication Number Publication Date
WO2002043120A2 WO2002043120A2 (en) 2002-05-30
WO2002043120A3 true WO2002043120A3 (en) 2003-08-07

Family

ID=7664559

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2001/004395 WO2002043120A2 (en) 2000-11-24 2001-11-22 Semiconductor laser element and method for producing such a semiconductor laser element

Country Status (2)

Country Link
DE (1) DE10058444A1 (en)
WO (1) WO2002043120A2 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5817538A (en) * 1994-09-16 1998-10-06 Fujitsu Limited Method of making quantum box semiconductor device
US6052400A (en) * 1997-04-17 2000-04-18 Nec Corporation Variable wavelength semiconductor laser

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0841707A3 (en) * 1996-11-11 2000-05-03 Sony Corporation Semiconductor light emitting device, its manufacturing method and optical recording and/or reproducing apparatus
DE19819259A1 (en) * 1998-04-29 1999-11-04 Max Planck Gesellschaft Semiconductor used as optoelectronic element

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5817538A (en) * 1994-09-16 1998-10-06 Fujitsu Limited Method of making quantum box semiconductor device
US6052400A (en) * 1997-04-17 2000-04-18 Nec Corporation Variable wavelength semiconductor laser

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
BIMBERG D ET AL: "Quantum dot lasers: breakthrough in optoelectronics", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 367, no. 1-2, May 2000 (2000-05-01), pages 235 - 249, XP004203917, ISSN: 0040-6090 *
PAN J L ET AL: "Collisional processes involved in the population kinetics of semiconductor quantum-dot lasers", PHYSICAL REVIEW B (CONDENSED MATTER), 15 JAN. 1994, USA, vol. 49, no. 4, pages 2554 - 2575, XP002234511, ISSN: 0163-1829 *
TACHIBANA K ET AL: "GROWTH OF INGAN SELF-ASSEMBLED QUANTUM DOTS AND THEIR APPLICATION TO LASERS", IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, IEEE SERVICE CENTER, US, vol. 6, no. 3, May 2000 (2000-05-01), pages 475 - 481, XP000968592, ISSN: 1077-260X *

Also Published As

Publication number Publication date
DE10058444A1 (en) 2002-06-06
WO2002043120A2 (en) 2002-05-30

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