WO2002043111A3 - Method for forming and filling isolation trenches - Google Patents

Method for forming and filling isolation trenches Download PDF

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Publication number
WO2002043111A3
WO2002043111A3 PCT/EP2001/013436 EP0113436W WO0243111A3 WO 2002043111 A3 WO2002043111 A3 WO 2002043111A3 EP 0113436 W EP0113436 W EP 0113436W WO 0243111 A3 WO0243111 A3 WO 0243111A3
Authority
WO
WIPO (PCT)
Prior art keywords
trenches
threshold size
widths
masking layer
forming
Prior art date
Application number
PCT/EP2001/013436
Other languages
French (fr)
Other versions
WO2002043111A2 (en
Inventor
Rajeev Malik
Mihel Seitz
Andreas Knorr
Original Assignee
Infineon Technologies Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag filed Critical Infineon Technologies Ag
Priority to EP01997834A priority Critical patent/EP1338033A2/en
Publication of WO2002043111A2 publication Critical patent/WO2002043111A2/en
Publication of WO2002043111A3 publication Critical patent/WO2002043111A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H10B12/0387—Making the trench

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Element Separation (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

A method for forming isolation trenches for semiconductor devices forms, in a substrate, a plurality of trenches (30 and 32) having different widths including widths above a threshold size (30) and widths below a threshold size (32). The plurality of trenches have a same first depth (D1). A masking layer (52) is deposited in the plurality of trenches, the masking layer has a thickness sufficient to both line the trenches with the widths above the threshold size and completely fill the trenches with the widths below the threshold size. A portion of the substrate (16) is exposed at a bottom of the trenches with the widths above the threshold size by etching the masking layer. The plurality of trenches are etched to extend the trenches with the widths above the threshold size to a greater depth (D2).
PCT/EP2001/013436 2000-11-21 2001-11-20 Method for forming and filling isolation trenches WO2002043111A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP01997834A EP1338033A2 (en) 2000-11-21 2001-11-20 Method for forming and filling isolation trenches

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/718,211 2000-11-21
US09/718,211 US6294423B1 (en) 2000-11-21 2000-11-21 Method for forming and filling isolation trenches

Publications (2)

Publication Number Publication Date
WO2002043111A2 WO2002043111A2 (en) 2002-05-30
WO2002043111A3 true WO2002043111A3 (en) 2002-08-01

Family

ID=24885229

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2001/013436 WO2002043111A2 (en) 2000-11-21 2001-11-20 Method for forming and filling isolation trenches

Country Status (3)

Country Link
US (1) US6294423B1 (en)
EP (1) EP1338033A2 (en)
WO (1) WO2002043111A2 (en)

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US6175147B1 (en) * 1998-05-14 2001-01-16 Micron Technology Inc. Device isolation for semiconductor devices
US6355518B1 (en) * 2000-09-05 2002-03-12 Promos Technologies, Inc. Method for making a DRAM cell with deep-trench capacitors and overlying vertical transistors
US6410402B1 (en) * 2000-10-05 2002-06-25 International Business Machines Corporation Method of providing variant fills in semiconductor trenches
JP3808700B2 (en) * 2000-12-06 2006-08-16 株式会社東芝 Semiconductor device and manufacturing method thereof
US6391703B1 (en) * 2001-06-28 2002-05-21 International Business Machines Corporation Buried strap for DRAM using junction isolation technique
US6531377B2 (en) * 2001-07-13 2003-03-11 Infineon Technologies Ag Method for high aspect ratio gap fill using sequential HDP-CVD
DE10143283C1 (en) * 2001-09-04 2002-12-12 Infineon Technologies Ag Production of a trench capacitor comprises a preparing a substrate having a surface in which a trench is formed and having an upper region, a lower region and a side wall
US6849518B2 (en) * 2002-05-07 2005-02-01 Intel Corporation Dual trench isolation using single critical lithographic patterning
US6828240B2 (en) * 2002-08-02 2004-12-07 Advanced Micro Devices, Inc. Method of manufacturing multi-level contacts by sizing of contact sizes in integrated circuits
TW563180B (en) * 2002-10-21 2003-11-21 Nanya Technology Corp Mask for defining a rectangular trench and a method of forming a vertical memory device by the mask
US6806200B2 (en) * 2002-11-08 2004-10-19 International Business Machines Corporation Method of improving etch uniformity in deep silicon etching
US7071075B2 (en) * 2003-12-08 2006-07-04 Nanya Technology Corporation STI forming method for improving STI step uniformity
US8158488B2 (en) 2004-08-31 2012-04-17 Micron Technology, Inc. Method of increasing deposition rate of silicon dioxide on a catalyst
US7354812B2 (en) * 2004-09-01 2008-04-08 Micron Technology, Inc. Multiple-depth STI trenches in integrated circuit fabrication
US7381615B2 (en) 2004-11-23 2008-06-03 Sandisk Corporation Methods for self-aligned trench filling with grown dielectric for high coupling ratio in semiconductor devices
US7402886B2 (en) * 2004-11-23 2008-07-22 Sandisk Corporation Memory with self-aligned trenches for narrow gap isolation regions
JP2006178907A (en) * 2004-12-24 2006-07-06 Matsushita Electric Ind Co Ltd Circuit simulation method and device
US7323379B2 (en) * 2005-02-03 2008-01-29 Mosys, Inc. Fabrication process for increased capacitance in an embedded DRAM memory
JP4221420B2 (en) * 2005-06-06 2009-02-12 エルピーダメモリ株式会社 Manufacturing method of semiconductor device
US7902597B2 (en) * 2006-03-22 2011-03-08 Samsung Electronics Co., Ltd. Transistors with laterally extended active regions and methods of fabricating same
TWI300975B (en) * 2006-06-08 2008-09-11 Nanya Technology Corp Method for fabricating recessed-gate mos transistor device
US20080113483A1 (en) * 2006-11-15 2008-05-15 Micron Technology, Inc. Methods of etching a pattern layer to form staggered heights therein and intermediate semiconductor device structures
US20080157169A1 (en) * 2006-12-28 2008-07-03 Yuan Jack H Shield plates for reduced field coupling in nonvolatile memory
US20080160680A1 (en) * 2006-12-28 2008-07-03 Yuan Jack H Methods of fabricating shield plates for reduced field coupling in nonvolatile memory
KR100894792B1 (en) * 2007-11-02 2009-04-24 주식회사 하이닉스반도체 Method of forming isolation film of semiconductor device
KR101795658B1 (en) * 2009-01-31 2017-11-08 어플라이드 머티어리얼스, 인코포레이티드 Method and apparatus for etching
US8227339B2 (en) * 2009-11-02 2012-07-24 International Business Machines Corporation Creation of vias and trenches with different depths
US20110115047A1 (en) * 2009-11-13 2011-05-19 Francois Hebert Semiconductor process using mask openings of varying widths to form two or more device structures
US8927387B2 (en) * 2012-04-09 2015-01-06 International Business Machines Corporation Robust isolation for thin-box ETSOI MOSFETS
US9006080B2 (en) * 2013-03-12 2015-04-14 Taiwan Semiconductor Manufacturing Company, Ltd. Varied STI liners for isolation structures in image sensing devices
JP7543028B2 (en) 2020-08-20 2024-09-02 キオクシア株式会社 Manufacturing method of semiconductor memory device

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Publication number Priority date Publication date Assignee Title
US4495025A (en) * 1984-04-06 1985-01-22 Advanced Micro Devices, Inc. Process for forming grooves having different depths using a single masking step
US5536675A (en) * 1993-12-30 1996-07-16 Intel Corporation Isolation structure formation for semiconductor circuit fabrication
US5731221A (en) * 1996-01-11 1998-03-24 Hyundai Electronics Industries Co., Ltd. Isolation method in a semiconductor device
JP2000150634A (en) * 1998-11-13 2000-05-30 Mitsubishi Electric Corp Semiconductor device and manufacture thereof
US6127737A (en) * 1997-04-11 2000-10-03 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and manufacturing method thereof

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JPH0513566A (en) * 1991-07-01 1993-01-22 Toshiba Corp Manufacture of semiconductor device
WO1997038442A1 (en) * 1996-04-10 1997-10-16 Advanced Micro Devices, Inc. Semiconductor trench isolation with improved planarization methodology
US5851899A (en) 1996-08-08 1998-12-22 Siemens Aktiengesellschaft Gapfill and planarization process for shallow trench isolation
US5804490A (en) 1997-04-14 1998-09-08 International Business Machines Corporation Method of filling shallow trenches
US5895253A (en) * 1997-08-22 1999-04-20 Micron Technology, Inc. Trench isolation for CMOS devices
TW395015B (en) * 1998-08-18 2000-06-21 United Microelectronics Corp Method for aligning shallow trench isolation
US6133083A (en) * 1998-12-22 2000-10-17 United Microelectronics Corp. Method to fabricate embedded DRAM

Patent Citations (6)

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Publication number Priority date Publication date Assignee Title
US4495025A (en) * 1984-04-06 1985-01-22 Advanced Micro Devices, Inc. Process for forming grooves having different depths using a single masking step
US5536675A (en) * 1993-12-30 1996-07-16 Intel Corporation Isolation structure formation for semiconductor circuit fabrication
US5731221A (en) * 1996-01-11 1998-03-24 Hyundai Electronics Industries Co., Ltd. Isolation method in a semiconductor device
US6127737A (en) * 1997-04-11 2000-10-03 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and manufacturing method thereof
JP2000150634A (en) * 1998-11-13 2000-05-30 Mitsubishi Electric Corp Semiconductor device and manufacture thereof
US20010036705A1 (en) * 1998-11-13 2001-11-01 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method of manufacturing the device

Non-Patent Citations (1)

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Title
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 08 6 October 2000 (2000-10-06) *

Also Published As

Publication number Publication date
EP1338033A2 (en) 2003-08-27
US6294423B1 (en) 2001-09-25
WO2002043111A2 (en) 2002-05-30

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