TW430931B - An improved method to form shallow trench isolation structures - Google Patents

An improved method to form shallow trench isolation structures

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Publication number
TW430931B
TW430931B TW88117369A TW88117369A TW430931B TW 430931 B TW430931 B TW 430931B TW 88117369 A TW88117369 A TW 88117369A TW 88117369 A TW88117369 A TW 88117369A TW 430931 B TW430931 B TW 430931B
Authority
TW
Taiwan
Prior art keywords
layer
silicon
silicon substrate
trench isolation
shallow trench
Prior art date
Application number
TW88117369A
Other languages
Chinese (zh)
Inventor
Jianxum Li
Qing Hua Zhong
Mei Sheng Zhou
Original Assignee
Chartered Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chartered Semiconductor Mfg filed Critical Chartered Semiconductor Mfg
Priority to TW88117369A priority Critical patent/TW430931B/en
Application granted granted Critical
Publication of TW430931B publication Critical patent/TW430931B/en

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Abstract

A method of forming a shallow trench isolation trenches in a silicon substrate of an integrated circuit device is achieved. A silicon substrate is provided. A buffer layer is deposited overlying the silicon substrate. An etching endpoint layer is deposited overlying the buffer layer. A silicon layer is deposited layer overlying the etching endpoint layer. A photoresist layer is coated overlying the silicon layer. The photoresist layer is developed wherein the photoresist layer is removed where the trenches are planned. The silicon layer, the etching endpoint layer, and the buffer layer are etched through to expose the top surface of the silicon substrate. The silicon layer and the silicon substrate layer are etched until the top surface of the etching endpoint layer is exposed, and the trenches are thereby formed. The integrated circuit device is completed.
TW88117369A 1999-10-08 1999-10-08 An improved method to form shallow trench isolation structures TW430931B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW88117369A TW430931B (en) 1999-10-08 1999-10-08 An improved method to form shallow trench isolation structures

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW88117369A TW430931B (en) 1999-10-08 1999-10-08 An improved method to form shallow trench isolation structures

Publications (1)

Publication Number Publication Date
TW430931B true TW430931B (en) 2001-04-21

Family

ID=21642556

Family Applications (1)

Application Number Title Priority Date Filing Date
TW88117369A TW430931B (en) 1999-10-08 1999-10-08 An improved method to form shallow trench isolation structures

Country Status (1)

Country Link
TW (1) TW430931B (en)

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