TW430931B - An improved method to form shallow trench isolation structures - Google Patents
An improved method to form shallow trench isolation structuresInfo
- Publication number
- TW430931B TW430931B TW88117369A TW88117369A TW430931B TW 430931 B TW430931 B TW 430931B TW 88117369 A TW88117369 A TW 88117369A TW 88117369 A TW88117369 A TW 88117369A TW 430931 B TW430931 B TW 430931B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- silicon
- silicon substrate
- trench isolation
- shallow trench
- Prior art date
Links
Landscapes
- Element Separation (AREA)
Abstract
A method of forming a shallow trench isolation trenches in a silicon substrate of an integrated circuit device is achieved. A silicon substrate is provided. A buffer layer is deposited overlying the silicon substrate. An etching endpoint layer is deposited overlying the buffer layer. A silicon layer is deposited layer overlying the etching endpoint layer. A photoresist layer is coated overlying the silicon layer. The photoresist layer is developed wherein the photoresist layer is removed where the trenches are planned. The silicon layer, the etching endpoint layer, and the buffer layer are etched through to expose the top surface of the silicon substrate. The silicon layer and the silicon substrate layer are etched until the top surface of the etching endpoint layer is exposed, and the trenches are thereby formed. The integrated circuit device is completed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW88117369A TW430931B (en) | 1999-10-08 | 1999-10-08 | An improved method to form shallow trench isolation structures |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW88117369A TW430931B (en) | 1999-10-08 | 1999-10-08 | An improved method to form shallow trench isolation structures |
Publications (1)
Publication Number | Publication Date |
---|---|
TW430931B true TW430931B (en) | 2001-04-21 |
Family
ID=21642556
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW88117369A TW430931B (en) | 1999-10-08 | 1999-10-08 | An improved method to form shallow trench isolation structures |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW430931B (en) |
-
1999
- 1999-10-08 TW TW88117369A patent/TW430931B/en not_active IP Right Cessation
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