WO2002042203A1 - Procede de preparation d'une particule ultra fine de chalcogenure metallique - Google Patents
Procede de preparation d'une particule ultra fine de chalcogenure metallique Download PDFInfo
- Publication number
- WO2002042203A1 WO2002042203A1 PCT/JP2001/010264 JP0110264W WO0242203A1 WO 2002042203 A1 WO2002042203 A1 WO 2002042203A1 JP 0110264 W JP0110264 W JP 0110264W WO 0242203 A1 WO0242203 A1 WO 0242203A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- metal
- chalcogen
- tip
- metal chalcogenide
- glass fiber
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B17/00—Sulfur; Compounds thereof
- C01B17/20—Methods for preparing sulfides or polysulfides, in general
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B19/00—Selenium; Tellurium; Compounds thereof
- C01B19/007—Tellurides or selenides of metals
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/262—Optical details of coupling light into, or out of, or between fibre ends, e.g. special fibre end shapes or associated optical elements
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
- C01P2002/84—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by UV- or VIS- data
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
- Y10S977/855—Manufacture, treatment, or detection of nanostructure with scanning probe for manufacture of nanostructure
Definitions
- the present invention relates to a method for producing ultrafine metal chalcogenide particles that emit light of a specific wavelength according to the particle diameter with a high degree of freedom in terms of position and size.
- Ultra-fine metal chalcogenide particles used for this type of application are chemically synthesized in large quantities, and are formed into devices as thin films fixed on the substrate surface by vapor deposition or various binders.
- Ultrafine metal chalcogenide particles exhibiting semiconductor properties have a band gap specific to the particle size corresponding to wavelengths in the ultraviolet to visible region.
- a light-emitting / light-emitting device capable of selecting light-receiving and light-emitting wavelengths in a specific wavelength region.
- cadmium selenide one of the metal chalcogenide semiconductors, emits three colors of blue, green, and red depending on the particle size.
- ultrafine metal chalcogenide particles obtained by conventional chemical synthesis have a disadvantage that the band gap is greatly extended to the visible light region because the particle size distribution is wide. Specifically, cadmium selenide emits white light as a result of a mixture of blue, green, and red.
- the present invention has been devised to meet such a demand, and utilizes the chemical reaction that occurs when a metal and a chalcogen thin film are brought into physical contact with each other in an extremely small area of a nanometer size to provide a position and a position. It is an object of the present invention to obtain metal chalcogenide ultrafine particles whose particle size is selected with high precision and high degree of freedom, and which is suitable for a light emitting device, a light receiving device and the like.
- the method for producing ultrafine metal chalcogenide particles of the present invention comprises, after providing a chalcogen thin film on the sharpened tip of a glass fiber, bringing the sharpened tip into physical contact with a metal to sharpen the glass fiber.
- Ultra-fine particles of metal chalcogenide are generated by mutual diffusion reaction between chalcogen and metal at the tip.
- the chalcogen film may be provided directly on the sharpened tip of the glass fiber or on the sharpened tip pretreated with a silane coupling agent.
- the ultrafine metal chalcogenide generated by the mutual diffusion reaction between the chalcogen and the metal migrates from the glass fiber onto the metal surface.
- ultrafine metal chalcogenide particles are fixed to the sharp tip of the glass fiber.
- Fig. 1 is a diagram showing the process of preparing ultrafine metal chalcogenide particles according to the present invention.
- Fig. 2 is an explanatory diagram of a method of immobilizing the generated ultrafine metal chalcogenide particles on a glass substrate.
- 1 is a graph showing the luminescence spectrum of the ultrafine fine particles of selenized force.
- Chalcogens include Se, Te, and S
- metals include Cd and Zn.
- a metal chalcogenide generation reaction field is specified in a target portion and in a very small region almost similar to the ultrafine particle size, and chalcogen and metal are brought into physical contact in the very small region. ing.
- This makes it possible to produce a single or extremely small number of metal chalcogenide ultrafine particles with a high degree of freedom in selecting the position and the particle size.
- a near-field scanning optical microscope using a sharpened glass fiber as the tip of a scanning probe microscope is used, a single or a very small number of metallic force lucogenide ultrafine particles are fixed at the tip of the tip, so high accuracy is achieved.
- Each required Seed spectroscopy ⁇ An element applicable to measurement is obtained.
- the tip of the glass fiber 1 is sharpened by chemical etching, and a thin film 3 is formed on the surface of the sharpened tip 2 by coating several to several tens of nm with chalcogen. Used as a tip for scanning probe microscope.
- the chalcogen thin film 3 is provided directly on the glass fiber 1, the strength and adhesion of the thin film 3 are weak because the affinity of chalcogen for glass is very low. During the reaction, there is a possibility that the glass fiber is peeled off from the glass fiber.
- silane coupling agent such as mercaptopropyltriethoxysilane, which has a very strong affinity for chalcogen (( Figure 1A).
- silane coupling agent various silane compounds can be used as long as they have a mercapto group at a terminal or a side chain.
- a silane adsorption film 4 is formed on the sharpened tip 2 of the glass fiber 1 pretreated with a silane coupling agent.
- a silane coupling agent When the surface of the sharpened tip 2 of the glass fiber 1 having the silane adsorption film 4 is brought into contact with chalcogen, the chalcogen and the glass are directly connected by a chemical bond, and a very strong chalcogen thin film 3 is formed.
- a typical example of the formation of the chalcogen thin film 3 is a solution immersion method. However, as long as a thin film of several to several tens of nm can be formed, a vacuum evaporation method, a sputtering method, or the like can be used.
- a solution in which chalcogen is saturated in carbon disulfide, which has a high solubility for chalcogen is prepared in advance, and the sharpened tip 2 of the glass fiber 1 is immersed in the chalcogen saturated solution.
- the carbon disulfide is gradually volatilized to form a chalcogen thin film 3 on the surface of the sharpened tip 2. Since the chalcogen thin film 3 is easily oxidized, All operations are performed in a nitrogen atmosphere.
- the chip coated with the chalcogen film 3 is mounted on a scanning probe microscope.
- the tip is gradually approached to the surface of metal 5 while feeding back with atomic force or shear force, and the tip is fixed when it comes into contact. If the tip is kept in contact for several minutes to several hours, a chemical reaction is induced between the chalcogen and the metal.
- the contact area between the chalcogen thin film 3 and the metal 5 is only a few to several hundreds of nm 2 . Therefore, a single or several to several tens of ultrafine metal chalcogenide particles having a diameter of several to several tens nm are produced in a contact region having an extremely small area.
- the use of a glass fiber 1 whose tip 2 is sharpened to a radius of curvature of about several nm enables the generation of single fine particles.
- a normal optical precision horizontal stage or the like can be used instead of the atomic force microscope.
- the chemical reaction that produces metal chalcogenides is a reaction induced by the interdiffusion of chalcogen and metal. Therefore, the particle size of the metal chalcogenide ultrafine particles 6 can be controlled by the duration of the contact state in addition to the radius of curvature of the glass fiber tip 2. Specifically, when the glass fiber 1 is separated from the metal 5 before the completion of the chemical reaction in the contact region, the metal chalcogenide ultrafine particles 6 having a smaller particle size are generated. In this case, unreacted chalcogen present around the metal chalcogenide can be easily washed and removed because it is oxidized by oxygen in the air to form chalcogenic acid.
- Ultrafine metal chalcogenide fixed to sharpened tip 2 of glass fiber 1 The element 6 emits light of a specific wavelength when irradiated with near ultraviolet light from inside or outside the glass fiber 1. Therefore, it can be used as a chip for a near-field scanning optical microscope, or can be used as a microsensor if its surface is further modified with various ions or substance-responsive films.
- a glass fiber with a chalcogen thin film 3 formed without pretreatment of the sharpened tip 2 with a silane coupling agent is also used to generate ultrafine metal chalcogenide particles 6 (Fig. 1B).
- the sharpened tip 2 of the glass fiber 1 is similarly brought into contact with the metal 5 to generate a metal chalcogenide, the lattice constant of the generated metal chalcogenide is significantly different from the force lucogen and the affinity between the glass and the chalcogen
- the metal chalcogenide ultrafine particles 6 are separated from the sharp tip 2 and remain on the surface of the metal 5.
- the metal 5 to be brought into contact with the sharpened tip 2 of the glass fiber 1 provided with the chalcogen thin film 3 is not limited to bulk metal, but may be a substrate made of gold, silver, copper, aluminum, silicon, etc.
- a Zn or Cd thin film or a dot having a size of several to several tens nm on an optical waveguide formed on a circuit or a glass substrate formed thereon may be used.
- ultrafine particles are formed at specific positions in circuits, waveguides, microfluidic channels, etc. It can be used as an EL device for clinical use, a microsensor for clinical analysis, etc.
- the sharpened glass fiber 1 is not necessarily required, and a normal tip for an atomic force microscope having a thin tip can be used.
- the term “sharpening” is used to include the latter.
- Metals such as Cd and Zn that react with chalcogen are deposited on the tip of the chip, By reacting with a chalcogen thin film provided on a glass surface treated with a coupling agent, metal chalcogenide fine particles can also be generated and fixed on the glass surface.
- a glass substrate 7 is treated with a silane coupling agent such as mercaptopropyltrimethoxysilane, and a thin lucogen thin film 3 is formed via a silane adsorption film 4.
- Cd or Zri is deposited on the tip surface of the atomic force microscope chip 8 to provide a metal thin film 9.
- the metal chalcogenide ultrafine particles 6 are generated by bringing the metal thin film 9 into contact with the chalcogen thin film 3 while controlling the contact pressure with an atomic force microscope.
- the particle size of the metal chalcogenide ultrafine particles 6 is controlled by the reaction time.
- the generated metal chalcogenide ultrafine particles 6 are separated from the metal thin film 9 and fixed to the chalcogen thin film 3.
- a single mode optical fiber with a diameter of 125 ⁇ and a cutoff frequency of 488mn was etched with hydrogen fluoride to sharpen the tip of the optical fiber. Etching was based on a protection layer method using toluene. Observation of the etched optical fiber tip showed that the tip angle was 30 degrees and the radius of curvature was 200 nm.
- Amorphous selenium having a particle size of several mm was added to carbon disulfide and stirred vigorously with a magnetic stirrer to prepare a selenium-saturated solution.
- the carbon disulfide solution in the immersed portion was evaporated under a nitrogen atmosphere for 12 hours. Observation of the tip of the optical fiber after the evaporation showed that a red selenium thin film was formed on the tip surface.
- the tip of an optical fiber on which a selenium thin film was deposited was brought into contact with the surface of cadmium in a nitrogen atmosphere.
- a solid-phase reaction between selenium and cadmium is induced, and Generated and fixed lentiable dome particles.
- the tip of the optical fiber with the fixed selenide force dome was fixed on the stage of a fluorescence microscope, and the emission of cadmium selenide ultrafine particles was observed using a liquid nitrogen-cooled CCD spectrometer while exciting with a 337 nm wavelength nitrogen laser. .
- the emission spectrum is limited to the green region of the visible light, and the power and the wavelength width are narrow. From this emission spectrum, it can be seen that the formed ultrafine particles have a very uniform particle size, and are ultrafine particles close to monodisperse.
- a chalcogen fixed to the tip of the sharpened glass fiber by contacting the chalcogen to metal contact between the chalcogen and the metal in several to several hundreds nm 2 region Is possible. Therefore, the particle size of the ultrafine metal chalcogenide particles generated by the interdiffusion reaction between the chalcogen and the metal can be controlled, and the generation position of the ultrafine metal chalcogenide particles can be controlled.
- the metal chalcogenide ultrafine particles immobilized in this way have an extremely narrow particle size distribution and exhibit emission characteristics according to the particle size.
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Composite Materials (AREA)
- Optics & Photonics (AREA)
- Luminescent Compositions (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
- Optical Head (AREA)
- Glass Compositions (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE60123921T DE60123921T2 (de) | 2000-11-27 | 2001-11-26 | Verfahren zur Herstellung von ultrafeinen Metallchalkogenidteilchen |
US10/182,350 US6926927B2 (en) | 2000-11-27 | 2001-11-26 | Method of preparing ultra fine particle of metal chalcogenide |
EP01997453A EP1243553B1 (en) | 2000-11-27 | 2001-11-26 | Method for preparing ultra fine particle of metal chalcogenide |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000-358707 | 2000-11-27 | ||
JP2000358707A JP3544353B2 (ja) | 2000-11-27 | 2000-11-27 | 金属カルコゲナイド超微粒子の作製方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2002042203A1 true WO2002042203A1 (fr) | 2002-05-30 |
Family
ID=18830562
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2001/010264 WO2002042203A1 (fr) | 2000-11-27 | 2001-11-26 | Procede de preparation d'une particule ultra fine de chalcogenure metallique |
Country Status (5)
Country | Link |
---|---|
US (1) | US6926927B2 (ja) |
EP (1) | EP1243553B1 (ja) |
JP (1) | JP3544353B2 (ja) |
DE (1) | DE60123921T2 (ja) |
WO (1) | WO2002042203A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3971333B2 (ja) * | 2003-03-31 | 2007-09-05 | Tdk株式会社 | 光記録材料、光記録媒体及びその製造方法、光記録方法、並びに再生方法 |
DE10318440B3 (de) * | 2003-04-15 | 2005-02-03 | Hahn-Meitner-Institut Berlin Gmbh | Elektrochemisches Verfahren zur direkten nanostrukturierbaren Materialabscheidung auf einem Substrat und mit dem Verfahren hergestelltes Halbleiterbauelement |
US20050069726A1 (en) * | 2003-09-30 | 2005-03-31 | Douglas Elliot Paul | Light emitting composite material and devices thereof |
US7697808B2 (en) * | 2004-07-27 | 2010-04-13 | Ut-Battelle, Llc | Multi-tipped optical component |
SG152970A1 (en) * | 2007-11-21 | 2009-06-29 | Nanomaterials Tech Pte Ltd | A process of making metal chalcogenide particles |
US8999746B2 (en) * | 2013-08-08 | 2015-04-07 | Tokyo Ohka Kogyo Co., Ltd. | Method of forming metal chalcogenide dispersion, metal chalcogenide dispersion, method of producing light absorbing layer of solar cell, method of producing solar cell |
US9828284B2 (en) | 2014-03-28 | 2017-11-28 | Ut-Battelle, Llc | Thermal history-based etching |
US10612371B2 (en) * | 2015-04-21 | 2020-04-07 | Halliburton Energy Services, Inc. | Partially reflective materials and coatings for optical communication in a wellbore |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60108339A (ja) * | 1983-11-14 | 1985-06-13 | Olympus Optical Co Ltd | カルコゲナイドガラス微粒子の製造方法 |
JPH0824626A (ja) * | 1994-07-19 | 1996-01-30 | Mitsui Toatsu Chem Inc | カルコゲン化合物超微粒子の製造方法 |
JPH10267946A (ja) * | 1997-03-21 | 1998-10-09 | Kagaku Gijutsu Shinko Jigyodan | 走査プローブ顕微鏡と蛍光性分子プローブ |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6126740A (en) * | 1995-09-29 | 2000-10-03 | Midwest Research Institute | Solution synthesis of mixed-metal chalcogenide nanoparticles and spray deposition of precursor films |
AUPP004497A0 (en) * | 1997-10-28 | 1997-11-20 | University Of Melbourne, The | Stabilized particles |
US6635311B1 (en) * | 1999-01-07 | 2003-10-21 | Northwestern University | Methods utilizing scanning probe microscope tips and products therefor or products thereby |
US6911081B2 (en) * | 2001-02-07 | 2005-06-28 | Agfa-Gevaert N.V. | Preparation of metal chalcogenide dispersions |
US6566665B2 (en) * | 2001-08-17 | 2003-05-20 | International Business Machines Corporation | Method and apparatus for linking and/or patterning self-assembled objects |
US20040183071A1 (en) * | 2002-08-13 | 2004-09-23 | Agfa-Gevaert | Nano-porous metal oxide semiconductor spectrally sensitized with metal oxide chalcogenide nano-particles |
US7468146B2 (en) * | 2002-09-12 | 2008-12-23 | Agfa-Gevaert | Metal chalcogenide composite nano-particles and layers therewith |
-
2000
- 2000-11-27 JP JP2000358707A patent/JP3544353B2/ja not_active Expired - Fee Related
-
2001
- 2001-11-26 WO PCT/JP2001/010264 patent/WO2002042203A1/ja active IP Right Grant
- 2001-11-26 DE DE60123921T patent/DE60123921T2/de not_active Expired - Fee Related
- 2001-11-26 EP EP01997453A patent/EP1243553B1/en not_active Expired - Lifetime
- 2001-11-26 US US10/182,350 patent/US6926927B2/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60108339A (ja) * | 1983-11-14 | 1985-06-13 | Olympus Optical Co Ltd | カルコゲナイドガラス微粒子の製造方法 |
JPH0824626A (ja) * | 1994-07-19 | 1996-01-30 | Mitsui Toatsu Chem Inc | カルコゲン化合物超微粒子の製造方法 |
JPH10267946A (ja) * | 1997-03-21 | 1998-10-09 | Kagaku Gijutsu Shinko Jigyodan | 走査プローブ顕微鏡と蛍光性分子プローブ |
Non-Patent Citations (1)
Title |
---|
See also references of EP1243553A4 * |
Also Published As
Publication number | Publication date |
---|---|
EP1243553A1 (en) | 2002-09-25 |
DE60123921T2 (de) | 2007-06-14 |
EP1243553A4 (en) | 2005-01-19 |
US20030003043A1 (en) | 2003-01-02 |
DE60123921D1 (de) | 2006-11-30 |
EP1243553B1 (en) | 2006-10-18 |
JP2002160909A (ja) | 2002-06-04 |
JP3544353B2 (ja) | 2004-07-21 |
US6926927B2 (en) | 2005-08-09 |
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