WO2002039487A2 - Device and method for encasing an electronic component - Google Patents
Device and method for encasing an electronic component Download PDFInfo
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- WO2002039487A2 WO2002039487A2 PCT/DE2001/003881 DE0103881W WO0239487A2 WO 2002039487 A2 WO2002039487 A2 WO 2002039487A2 DE 0103881 W DE0103881 W DE 0103881W WO 0239487 A2 WO0239487 A2 WO 0239487A2
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- sleeve
- potting compound
- potting
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- electronic component
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J3/00—Processes of treating or compounding macromolecular substances
- C08J3/24—Crosslinking, e.g. vulcanising, of macromolecules
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2363/00—Characterised by the use of epoxy resins; Derivatives of epoxy resins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Definitions
- press-in diodes are coated with thermosetting epoxy. It is also known that a thermoplastic sleeve is used as the lost mold for casting and that the epoxy is filled with quartz powder.
- the device according to the invention and the method according to the invention with the features of the subordinate claims have the advantage over the fact that the sensitivity to moisture of the plastic-encased components can be reduced inexpensively.
- Plastics such as epoxies or silicones are used to wrap electronic components (diodes, transistors, integrated circuits). Processes such as casting or transfer molding are used. The liquid substance is then cured (crosslinked) and thus forms the covering.
- the hardened molding material can easily be penetrated by water molecules, which can lead to the functional failure of the electronic component due to high reverse currents or corrosion.
- fillers such as quartz powder, are added to the liquid raw materials of the casing. The filler should be distributed as evenly as possible in the hardened molding material and is impenetrable to water. It extends the creepage distance of the water molecules so much that in practice a sufficient lifespan of the electronic components is guaranteed.
- quartz grains are evenly distributed in the hardened epoxy.
- a grain size distribution is specified for the quartz flour. Both small and larger quartz grains are included. The larger quartz grains in particular tend to settle in the lower area of the diode epoxy capsule when the epoxy hardens (sedimentation). The Sedimentation is promoted by the heat curing of the epoxy.
- the liquid starting material containing the quartz grains (epoxy resin-acid anhydride hardener mixture) is poured into the sleeve stuck on the metal base of the diode and cured in an oven. Before the viscosity of the liquid resin-hardener mixture increases due to crosslinking in the oven, it goes through a temperature-dependent minimum.
- the larger quartz grains in particular sediment in this thin liquid phase After curing, the upper area of the diode epoxy capsule is almost free of quartz grains. Water can penetrate freely to the silicon chip. When water passes through the epoxy, ions remaining in small amounts are mobilized by the water. This creates a parallel current path on the chip side edges, which increases parasitic currents, for example the reverse current of a diode, inadmissibly.
- the tendency of the quartz grains to sediment can be reduced by admixing surface-active substances, so-called sedimentation inhibitors. However, they can only be used in low concentrations because they negatively influence the flow behavior of the liquid resin-hardener mixture. They cause thixotropy, ie the viscosity decreases with increasing shear or shear stress.
- the resin-hardener mixture is filled into the diode under excess pressure. If the diode is filled, the filling valve is closed and normal pressure is set again. So while the viscosity is reduced during the filling process, it rises again under normal pressure. The air trapped during the filling process can then no longer escape. Thus sedimentation inhibitors promote the inclusion of air bubbles in the cast body. Because of the low concentration, their effects are limited. Sedimentation can be prevented much more effectively if the crosslinking reaction when curing in the oven is accelerated. Known reaction accelerators can be added to the liquid starting materials for this purpose. But even these can only be used in low doses because they greatly reduce the period of workability, the so-called pot life. The crosslinking reaction then starts at room temperature.
- the essential points for minimizing the absorption of moisture by the potting compound that envelops the component are, on the one hand, storage and transport in dry packs and, on the other hand, the most uniform possible distribution of the quartz grains in the hardened potting compound. This is ensured in a simple manner according to the invention.
- the sleeve comprises a material with a high water absorption capacity, the water absorption capacity of the substance being greater than 0.2% by weight, in particular greater than 0.8% by weight.
- the sleeve comprises a material with a high water absorption capacity, the water absorption capacity of the substance being greater than 0.2% by weight, in particular greater than 0.8% by weight.
- the fabric consists of polyamide, in particular of partially aromatic polyamide. As a result, a large water absorption capacity is realized.
- the sleeve is thermoplastic and is provided as a lost casting mold. This enables easy use and low costs. Furthermore, by coloring the sleeve material, a simple and cost-effective distinction between different types of diodes can be achieved. Furthermore, the lost shape means that a repeat shape can be dispensed with, which has considerable advantages in terms of production technology and also causes lower costs. Another advantage is that the potting compound u epoxy resin and acid anhydride. This accelerates the hardening process in the presence of water molecules.
- the casting compound comprises quartz grains. This makes the potting compound more difficult to penetrate by water molecules.
- FIG. 1 shows a device according to the invention for wrapping an electronic component.
- FIG. 1 shows a device 1 according to the invention for
- the device 1 comprises
- connecting head wire 30 which forms another connection of the component 10 for electrical contacting
- the sleeve 100 and the potting compound 200 are essential to the invention in the present invention.
- the sleeve 100 together with the metal base 20 forms a potting volume for the potting compound 200, which is not denoted by a separate reference numeral in FIG. 1 that in the fully assembled and contacted component 10, the sleeve 100 is placed on the metal base 20, the sleeve 100 being conditioned with water molecules. This takes place, for example, in that the sleeve 100 is preconditioned in an atmosphere of high humidity before being placed on the metal base 20. As a result, the sleeve 100 receives a relatively large amount of water molecules. After the sleeve 100 is placed on the metal base 20, the sleeve 100 and the metal base 20 become the
- the potting compound 200 is poured into this potting volume.
- the sealing compound comprises epoxy resin and acid anhydride hardener in one mixture.
- the potting compound further comprises quartz grains, which are not shown in FIG. 1. In another
- the potting compound 200 is hardened, for example, by heating it to temperatures of 200 ° C. and above for one hour or more.
- the water in the sleeve 100 i.e. the water molecules in the sleeve 100 to which
- Acid anhydride hardener m are given the sealing compound 200.
- the heat treatment completely expels the moisture in the sleeve 100 from the sleeve 100 during the hardening process. at When the diode is stored and transported, the dried sleeve also acts like a water-absorbing substance in a dry pack. The effect of the sleeve 100 is even more effective than a dry pack in this regard, since each diode is individually encased in a water-absorbing sleeve 100.
- the sleeve material should in particular have a water absorption capacity of 0.2% by weight or greater, advantageously even a water absorption capacity of 0.8% by weight or greater.
- Suitable substances for this are e.g. Polyamides, especially partially aromatic polyamides.
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
The invention relates to a device (1) and to a method for encasing an electronic component (10). According to the invention, the device (1) comprises a sleeve (100) and a casting compound (200), whereby said casting compound (200) is hardened. The casting compound (200) is one that hardens at an accelerated rate when exposed to water molecules, and the sleeve (100) provides the water molecules.
Description
Vorrichtung und Verfahren zur Umhüllung eines elektronischen BauelementsDevice and method for wrapping an electronic component
Stand der TechnikState of the art
Es ist bekannt, dass Einpreßdioden mit heißhärtendem Epoxid umhüllt werden. Es ist weiterhin bekannt, dass zum Vergießen eine thermoplastische Hülse als verlorene Form eingesetzt wird und dass das Epoxid mit Quarzgutmehl gefüllt ist.It is known that press-in diodes are coated with thermosetting epoxy. It is also known that a thermoplastic sleeve is used as the lost mold for casting and that the epoxy is filled with quartz powder.
Vorteile der ErfindungAdvantages of the invention
Die erfindungsgemäße Vorrichtung und das erfindungsgemäße Verfahren mit den Merkmalen der nebengeordneten Ansprüche haben demgegenüber den Vorteil, dass die Feuchteempfindlichkeit der mit Kunststoff umhüllten Bauelemente kostengünstig reduziert werden kann.The device according to the invention and the method according to the invention with the features of the subordinate claims have the advantage over the fact that the sensitivity to moisture of the plastic-encased components can be reduced inexpensively.
Zur Umhüllung elektronischer Bauelemente (Dioden, Transistoren, integrierte Schaltkreise) werden Kunststoffe wie Epoxide oder Silikone eingesetzt. Es kommen Verfahren wie Vergießen oder Transfermolding zum Einsatz. Der flüssige Stoff wird anschließend ausgehärtet (vernetzt) und formt damit die Umhüllung. Der ausgehärtete Formstoff kann leicht durch Wassermoleküle penetriert werden, was zum Funktionsausfall des elektronischen Bauelements durch hohe Sperrströme oder Korrosion führen kann. Um die Durchdringung
durch Wasser zu behindern, werden den flüssigen Ausgangsstoffen der Umhüllung Füllstoffe, wie beispielsweise Quarzgutmehl, beigemischt. Der Füllstoff soll sich möglichst gleichmäßig im ausgehärteten Formstoff verteilen und ist undurchdringlich für Wasser. Er verlängert den Kriechweg der Wassermoleküle so stark, dass in der Praxis eine ausreichende Lebensdauer der elektronischen Bauelemente gewährleistet ist.Plastics such as epoxies or silicones are used to wrap electronic components (diodes, transistors, integrated circuits). Processes such as casting or transfer molding are used. The liquid substance is then cured (crosslinked) and thus forms the covering. The hardened molding material can easily be penetrated by water molecules, which can lead to the functional failure of the electronic component due to high reverse currents or corrosion. To penetration To obstruct water, fillers, such as quartz powder, are added to the liquid raw materials of the casing. The filler should be distributed as evenly as possible in the hardened molding material and is impenetrable to water. It extends the creepage distance of the water molecules so much that in practice a sufficient lifespan of the electronic components is guaranteed.
Für die Hersteller solcher Bauelemente wird die Situation dadurch verschärft, dass außerdem zu garantieren ist, dass sich die elektrischen bzw. elektronischen Parameter der Bauelemente innerhalb einer festgelegten Lagerzeit nicht oder nur innerhalb gewisser Grenzen ändern dürfen. Beispielsweise ist es für Dioden so, dass der Sperrstrom eine Grenze von einigen Nanoampere nicht überschreiten darf. Es genügen jedoch bereits Spuren von Wasser in der Umhüllung solcher Bauelemente, um den Sperrstrom über diese Grenze ansteigen zu lassen. Deshalb werden elektronische Bauelemente meist in Dry Packs gelagert und transportiert. Dry Packs sind Kunststoffbeutel, oft mit Metallschichten belegt, in die kleine Papier- oder Stoffbeutel mit wasserabsorbierenden Materialien und Wasserindikatoren eingelegt werden. Die Bauelemente werden unter Stickstoffatmosphäre in den Kunststoffbeutel eingeschweißt. Damit sind hohe Kosten verbunden.For the manufacturers of such components, the situation is exacerbated by the fact that it must also be guaranteed that the electrical or electronic parameters of the components may not change within a specified storage period, or may only change within certain limits. For diodes, for example, the reverse current must not exceed a limit of a few nanoamperes. However, traces of water in the casing of such components are already sufficient to cause the reverse current to rise above this limit. That is why electronic components are usually stored and transported in dry packs. Dry packs are plastic bags, often covered with metal layers, into which small paper or cloth bags with water-absorbing materials and water indicators are placed. The components are welded into the plastic bag under a nitrogen atmosphere. This involves high costs.
Zur Verlängerung des Kriechwegs für die Wassermoleküle ist es bekanntermaßen wesentlich, dass die Quarzkörner gleichmäßig im ausgehärteten Epoxid verteilt sind. Für das Quarzgutmehl ist eine Korngrößenverteilung spezifiziert. Es sind also sowohl kleine als auch größere Quarzkörner enthalten. Speziell die größeren Quarzkörner neigen dazu, sich beim Aushärten des Epoxids im unteren Bereich der Diodenepoxidkapsel abzusetzen (Sedimentation) . Die
Sedimentation wird gefördert durch die Heißhärtung des Epoxids . Der die Quarzkörner enthaltende, flüssige Ausgangssstoff (Epoxidharz-Säureanhydridhärter-Mischung) wird in die auf dem Metallsockel der Diode festgesteckten Hülse eingegossen und in einem Ofen ausgehärtet. Bevor die Viskosität der flüssigen Harz-Härter-Mischung durch Vernetzung im Ofen zunimmt, durchläuft sie ein temperaturabhängiges Minimum. In dieser dünnflüssigen Phase sedimentieren vor allem die größeren Quarzkörner. Nach dem Aushärten ist der obere Bereich der Diodenepoxidkapsel nahezu quarzkornfrei . Wasser kann ungehindert bis an den Siliziumchip penetrieren. Beim Durchtritt des Wassers durch das Epoxid werden in kleinen Restmengen vorhandene Ionen durch das Wasser mobilisiert. Dadurch entsteht an den Chipseitenkanten ein paralleler Strompfad, der parasitäre Ströme, beispielsweise den Sperrstrom einer Diode, unzulässig erhöht. Die Sedimentationsneigung der Quarzkörner kann, wie bekannt, reduziert werden durch Beimischung oberflächenaktiver Stoffe, sogenannte Sedimenationshemmer . Sie können aber nur in niedriger Konzentration angewendet werden, weil sie das Fließverhalten, der flüssigen Harz- Härter-Mischung negativ beeinflussen. Sie verursachen Thixotropie, d.h. die Viskosität nimmt mit zunehmender Scher- oder Schubspannung ab. Im vorliegenden Fall wird die Harz-Härter-Mischung unter Überdruck in die Diode eingefüllt. Ist die Diode befüllt, wird das Befüllventil geschlossen und damit wieder Normaldruck eingestellt. Während also beim Befüllvorgang die Viskosität erniedrigt ist, steigt sie unter Normaldruck wieder an. Die beim Befüllvorgang eingeschlossene Luft kann dann nicht mehr entweichen. Somit fördern Sedimentationshemmer den Einschluß von Luftblasen im Gußkörper. Wegen der niedrigen Konzentration ist ihre Wirkung eingeschränkt. Die Sedimentation lässt sich wesentlich wirksamer unterbinden, wenn die Vernetzungsreaktion beim Aushärten im Ofen
beschleunigt wird. Dazu können den flüssigen Ausgangsstoffen bekannte Reaktionsbeschleuniger zugefügt werden. Aber auch diese sind nur in niedrigen Dosen anwendbar, weil sie den Zeitraum für die Verarbeitbarkeit, die sogenannte Topfzeit, stark reduzieren. Die Vernetzungsreaktion setzt dann nämlich bereits unter Raumtemperatur ein.In order to extend the crawl path for the water molecules, it is known that it is essential that the quartz grains are evenly distributed in the hardened epoxy. A grain size distribution is specified for the quartz flour. Both small and larger quartz grains are included. The larger quartz grains in particular tend to settle in the lower area of the diode epoxy capsule when the epoxy hardens (sedimentation). The Sedimentation is promoted by the heat curing of the epoxy. The liquid starting material containing the quartz grains (epoxy resin-acid anhydride hardener mixture) is poured into the sleeve stuck on the metal base of the diode and cured in an oven. Before the viscosity of the liquid resin-hardener mixture increases due to crosslinking in the oven, it goes through a temperature-dependent minimum. The larger quartz grains in particular sediment in this thin liquid phase. After curing, the upper area of the diode epoxy capsule is almost free of quartz grains. Water can penetrate freely to the silicon chip. When water passes through the epoxy, ions remaining in small amounts are mobilized by the water. This creates a parallel current path on the chip side edges, which increases parasitic currents, for example the reverse current of a diode, inadmissibly. As is known, the tendency of the quartz grains to sediment can be reduced by admixing surface-active substances, so-called sedimentation inhibitors. However, they can only be used in low concentrations because they negatively influence the flow behavior of the liquid resin-hardener mixture. They cause thixotropy, ie the viscosity decreases with increasing shear or shear stress. In the present case, the resin-hardener mixture is filled into the diode under excess pressure. If the diode is filled, the filling valve is closed and normal pressure is set again. So while the viscosity is reduced during the filling process, it rises again under normal pressure. The air trapped during the filling process can then no longer escape. Thus sedimentation inhibitors promote the inclusion of air bubbles in the cast body. Because of the low concentration, their effects are limited. Sedimentation can be prevented much more effectively if the crosslinking reaction when curing in the oven is accelerated. Known reaction accelerators can be added to the liquid starting materials for this purpose. But even these can only be used in low doses because they greatly reduce the period of workability, the so-called pot life. The crosslinking reaction then starts at room temperature.
Die wesentlichen Punkte zur Minimierung der Feuchteaufnahme durch die Vergußmasse, die das Bauelement umhüllt, sind zum einen die Lagerung und der Transport in Dry Packs und zum anderen die möglichst gleichmäßige Verteilung der Quarzkörner in der ausgehärteten Vergußmasse. Dies wird erfindunsgemäß auf einfache Weise gewährleistet.The essential points for minimizing the absorption of moisture by the potting compound that envelops the component are, on the one hand, storage and transport in dry packs and, on the other hand, the most uniform possible distribution of the quartz grains in the hardened potting compound. This is ensured in a simple manner according to the invention.
Weiterhin ist von Vorteil, dass die Hülse einen Stoff mit hohem Wasseraufnahmevermögen umfasst, wobei das Wasseraufnahmevermögen des Stoffs größer als 0,2 Gew.-% insbesondere größer als 0,8 Gew.-% ist. Dadurch können Wassermoleküle in größerer Anzahl zur Beschleunigung des Härtungsprozesses der Vergußmasse bereitgestellt werden.It is also advantageous that the sleeve comprises a material with a high water absorption capacity, the water absorption capacity of the substance being greater than 0.2% by weight, in particular greater than 0.8% by weight. As a result, a large number of water molecules can be provided to accelerate the hardening process of the casting compound.
Weiterhin ist von Vorteil, dass der Stoff aus Polyamid, insbesondere aus teilaromatischem Polyamid besteht. Hierdurch wird ein großes Wasseraufnahmevermögen realisiert.Another advantage is that the fabric consists of polyamide, in particular of partially aromatic polyamide. As a result, a large water absorption capacity is realized.
Weiterhin ist von Vorteil, dass die Hülse thermoplastisch und als verlorene Vergießform vorgesehen ist. Dadurch ist eine einfache Anwendung und niedrigen Kosten erreichbar. Weiterhin lässt sich durch Ξinfärben des Hülsenstoffs eine einfache und kostengünstige Unterscheidung verschiedener Diodentypen erreichen. Weiterhin kann durch die verlorne Form auf eine Wiederholform verzichtet werden, was fertigungstechnisch erhebliche Vorteile hat und ebenfalls geringere Kosten verursacht .
Weiterhin ist von Vorteil, dass die Vergußmasse Epoxidharz und Säureanhydridhärter u fasst. Dadurch wird der Härtungsprozeß bei Anwesenheit von Wassermolekülen beschleunigt.Another advantage is that the sleeve is thermoplastic and is provided as a lost casting mold. This enables easy use and low costs. Furthermore, by coloring the sleeve material, a simple and cost-effective distinction between different types of diodes can be achieved. Furthermore, the lost shape means that a repeat shape can be dispensed with, which has considerable advantages in terms of production technology and also causes lower costs. Another advantage is that the potting compound u epoxy resin and acid anhydride. This accelerates the hardening process in the presence of water molecules.
Weiterhin ist von Vorteil, dass die Vergußmasse Quarzkörner umfasst. Dadurch wird die Penetrierbarkeit der Vergußmasse durch Wassermoleküle erschwert.It is also advantageous that the casting compound comprises quartz grains. This makes the potting compound more difficult to penetrate by water molecules.
Zeichnungdrawing
Ein Ausführungsbeispiel der Erfindung ist in der einzigen Figur dargestellt und in der nachfolgenden Beschreibung näher erläutert. Die einzige Figur 1 zeigt eine erfindungsgemäße Vorrichtung zur Umhüllung eines elektronischen Bauelements.An embodiment of the invention is shown in the single figure and explained in more detail in the following description. The only FIG. 1 shows a device according to the invention for wrapping an electronic component.
Beschreibung des AusführungsbeispielsDescription of the embodiment
In Figur 1 ist eine erfindungsgemäße Vorrichtung 1 zur1 shows a device 1 according to the invention for
Umhüllung eines elektronischen Bauelements 10 dargestellt. Als Beispiel eines elektronischen Bauelements 10 ist hierbei eine Diode genommen worden. Die Vorrichtung 1 umfasstSheath of an electronic component 10 shown. A diode has been taken here as an example of an electronic component 10. The device 1 comprises
- einen Metallsockel 20 als einen Anschlußkontakt des Bauelements 10,a metal base 20 as a connection contact of the component 10,
- das Bauelement 10,component 10,
- einen Anschlußköpfdraht 30, der einen anderen Anschluß des Bauelements 10 zur elektrischen Kontaktierung bildet,a connecting head wire 30, which forms another connection of the component 10 for electrical contacting,
- Lötstellen 12 zwischen dem elektronischen Bauelement 10 und dem Metallsockel 20 einerseits bzw. dem Metallkopfdraht- Soldering points 12 between the electronic component 10 and the metal base 20 on the one hand or the metal head wire
30 andererseits,30 on the other hand,
- eine erfindungsgemäße Hülse 100 und- A sleeve 100 and
- eine Vergußmasse 200.
Erfindungswesentlich ist bei der vorliegenden Erfindung die Hülse 100 und die Vergußmasse 200. Die Hülse 100 bildet zusammen mit dem Metallsockel 20 ein in der Figur 1 nicht durch ein eigenes Bezugszeichen bezeichnetes Vergußvolumen für die Vergußmasse 200. Die Umhüllung des elektronischen Bauelements 10 wird erfmdungsgemaß derart durchgeführt, dass bei dem fertig montierten und kontaktierten Bauelement 10 auf den Metallsockel 20 die Hülse 100 aufgesetzt wird, wobei die Hülse 100 mit Wassermolekulen konditioniert ist. Dies geschieht beispielsweise dadurch, dass die Hülse 100 vor dem Aufsetzen auf den Metallsockel 20 in einer Atmosphäre hoher Feuchte vorkonditioniert ist. Dadurch nimmt die Hülse 100 eine relativ große Menge an Wassermolekulen auf. Nach dem Aufsetzen der Hülse 100 auf den Metallsockel 20 wird durch die Hülse 100 und den Metallsockel 20 dasa casting compound 200. The sleeve 100 and the potting compound 200 are essential to the invention in the present invention. The sleeve 100 together with the metal base 20 forms a potting volume for the potting compound 200, which is not denoted by a separate reference numeral in FIG. 1 that in the fully assembled and contacted component 10, the sleeve 100 is placed on the metal base 20, the sleeve 100 being conditioned with water molecules. This takes place, for example, in that the sleeve 100 is preconditioned in an atmosphere of high humidity before being placed on the metal base 20. As a result, the sleeve 100 receives a relatively large amount of water molecules. After the sleeve 100 is placed on the metal base 20, the sleeve 100 and the metal base 20 become the
Vergußvolumen definiert. In dieses Vergußvolumen wird die Vergußmasse 200 eingegossen. Die Vergußmasse umfasst Epoxidharz und Säureanhydridhärter in einer Mischung. Weiterhin umfasst die Vergußmasse Quarzkorner, die in der Figur 1 nicht dargestellt sind. In einem weiterenPotting volume defined. The potting compound 200 is poured into this potting volume. The sealing compound comprises epoxy resin and acid anhydride hardener in one mixture. The potting compound further comprises quartz grains, which are not shown in FIG. 1. In another
Herstellungsschritt wird die Vergußmasse 200 gehartet, indem sie beispielsweise eine Stunde lang oder langer auf Temperaturen von 200°C und darüber erhitzt wird. Hierbei ist es so, dass das in der Hülse 100 befindliche Wasser, d.h. die in der Hülse 100 befindlichen Wassermolekule, an denIn the manufacturing step, the potting compound 200 is hardened, for example, by heating it to temperatures of 200 ° C. and above for one hour or more. Here it is the case that the water in the sleeve 100, i.e. the water molecules in the sleeve 100 to which
Säureanhydridhärter m der Vergußmasse 200 abgegeben werden. Dadurch entsteht eine freie Saure, die die Reaktion zwischen dem Epoxidharz und dem Säureanhydridhärter initiiert, also wie ein hochwirksamer Reaktionsbeschleuniger agiert, ohne dessen Nachteil der Topfzeitverkurzung aufzuweisen. Dadurch wird eine gleichmaßige Quarzkornverteilung im ausgeharteten Formstoff, d.h. in der ausgeharteten Vergußmasse 200 sichergestellt. Durch die Temperaturbehandlung wird wahrend des Aushartvorgangs die in der Hülse 100 befindliche Feuchtigkeit vollständig aus der Hülse 100 ausgetrieben. Bei
der Lagerung und dem Transport der Diode wirkt die ausgetrocknete Hülse darüber hinaus wie ein wasserabsorbierender Stoff in einem Dry Pack. Die Wirkung der Hülse 100 ist in dieser Hinsicht sogar noch wirksamer als ein Dry Pack, da jede Diode individuell von einer wasserabsorbierenden Hülse 100 ummantelt ist.Acid anhydride hardener m are given the sealing compound 200. This creates a free acid that initiates the reaction between the epoxy resin and the acid anhydride hardener, i.e. acts like a highly effective reaction accelerator without having the disadvantage of shortening the pot life. This ensures a uniform distribution of quartz grains in the hardened molding material, ie in the hardened casting compound 200. The heat treatment completely expels the moisture in the sleeve 100 from the sleeve 100 during the hardening process. at When the diode is stored and transported, the dried sleeve also acts like a water-absorbing substance in a dry pack. The effect of the sleeve 100 is even more effective than a dry pack in this regard, since each diode is individually encased in a water-absorbing sleeve 100.
Erfindungsgemäß sollte der Hülsenstoff insbesondere ein Wasseraufnahmevermögen von 0,2 Gew.-% oder größer aufweisen, vorteilhafterweise sogar ein Wasseraufnahmevermögen von 0,8 Gew.-% und größer. Geeignete Stoffe hierfür sind z.B. Polyamide, insbesondere teilaromatische Polyamide.
According to the invention, the sleeve material should in particular have a water absorption capacity of 0.2% by weight or greater, advantageously even a water absorption capacity of 0.8% by weight or greater. Suitable substances for this are e.g. Polyamides, especially partially aromatic polyamides.
Claims
1. Vorrichtung (1) zur Umhüllung eines elektronischen Bauelements (10) , mit einer Hülse (100) und mit einer1. Device (1) for enveloping an electronic component (10), with a sleeve (100) and with one
Vergußmasse (300) , wobei die Hülse (100) ein Vergußvolumen definiert, das von der Vergußmasse (200) zumindest teilweise ausgefüllt wird, wobei die Vergußmasse (200) das elektronische Bauelement (10) zumindest teilweise umhüllt, wobei die Vergußmasse (200) gehärtet wird, dadurch gekennzeichnet, dass eine Vergußmasse (200) Verwendung findet, die durch die Anwesenheit von Wassermolekülen beschleunigt härtet, wobei die Wassermoleküle von der Hülse (100) bereitstellbar sind.Potting compound (300), the sleeve (100) defining a potting volume which is at least partially filled by the potting compound (200), the potting compound (200) at least partially enveloping the electronic component (10), the potting compound (200) hardening is characterized in that a potting compound (200) is used which hardens accelerated by the presence of water molecules, the water molecules being able to be provided by the sleeve (100).
2. Vorrichtung (1) nach Anspruch 1, dadurch gekennzeichnet, dass die Hülse (100) einen Stoff mit hohem Wasseraufnahmevermögen umfaßt, wobei das Wasseraufnahmevermögen des Stoffs größer als 0,2 Gew. %, insbesondere größer als 0,8 Gew. %, ist.2. Device (1) according to claim 1, characterized in that the sleeve (100) comprises a substance with a high water absorption capacity, the water absorption capacity of the substance being greater than 0.2% by weight, in particular greater than 0.8% by weight, is.
3. Vorrichtung (1) nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass der Stoff aus Polyamid, insbesondere aus teilaromatischem Polyamid besteht.3. Device (1) according to claim 1 or 2, characterized in that the substance consists of polyamide, in particular of partially aromatic polyamide.
4. Vorrichtung (1) nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die Hülse (100) thermoplastisch und als verlorene Vergießform vorgesehen ist. 4. Device (1) according to one of the preceding claims, characterized in that the sleeve (100) is provided thermoplastic and as a lost casting mold.
5. Vorrichtung (1) nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die Vergußmasse (200) Epoxidharz und Säureanhydridhärter umfaßt .5. Device (1) according to one of the preceding claims, characterized in that the sealing compound (200) comprises epoxy resin and acid anhydride hardener.
6. Vorrichtung (1) nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die Vergußmasse (200) Quarzkörner umfaßt .6. Device (1) according to one of the preceding claims, characterized in that the casting compound (200) comprises quartz grains.
7. Verfahren zur Umhüllung eines elektronischen Bauelements (10) wobei eine Hülse (100) und eine Vergußmasse (200) derart vorgesehen sind, dass die Hülse (100) ein Vergußvolumen definiert, das von der Vergußmasse (200) zumindest teilweise ausgefüllt wird, wobei die Vergußmasse (200) das elektronische Bauelement zumindest teilweise umhüllt, mit folgenden Schritten:7. A method for encasing an electronic component (10) wherein a sleeve (100) and a potting compound (200) are provided such that the sleeve (100) defines a potting volume that is at least partially filled by the potting compound (200), wherein the potting compound (200) at least partially envelops the electronic component, with the following steps:
- die Hülse (100) wird mit Wassermolekülen konditionier ;- The sleeve (100) is conditioned with water molecules;
- das Vergußvolumen wird zumindest teilweise mit der Vergußmasse (200) ausgefüllt;- The potting volume is at least partially filled with the potting compound (200);
- die Vergußmasse (200) wird gehärtet, wobei die Wassermoleküle die Härtung beschleunigen;- The potting compound (200) is hardened, the water molecules accelerating the hardening;
- die Wassermoleküle werden aus der Hülse (100) weitgehend entfernt .- The water molecules are largely removed from the sleeve (100).
8. Verfahren nach Anspruch 7, dadurch gekennzeichnet, dass eine Hülse (100) und eine Vergußmasse (200) nach einem der8. The method according to claim 7, characterized in that a sleeve (100) and a sealing compound (200) according to one of the
Ansprüche 1 bis 6 verwendet werden. Claims 1 to 6 can be used.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP01993942A EP1336196A2 (en) | 2000-11-08 | 2001-10-10 | Device and method for encasing an electronic component |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10055247A DE10055247A1 (en) | 2000-11-08 | 2000-11-08 | Device and method for wrapping an electronic component |
| DE10055247.1 | 2000-11-08 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO2002039487A2 true WO2002039487A2 (en) | 2002-05-16 |
| WO2002039487A3 WO2002039487A3 (en) | 2002-11-28 |
Family
ID=7662502
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/DE2001/003881 WO2002039487A2 (en) | 2000-11-08 | 2001-10-10 | Device and method for encasing an electronic component |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP1336196A2 (en) |
| DE (1) | DE10055247A1 (en) |
| WO (1) | WO2002039487A2 (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0034207A1 (en) * | 1980-02-13 | 1981-08-26 | Robert Bosch Gmbh | Semiconductor device |
| DE3913488A1 (en) * | 1989-04-25 | 1990-10-31 | Bosch Gmbh Robert | Casting compsn. e.g. for encapsulating semiconductor - contg. cyclo-aliphatic and/or novolak epoxide] resin, methyl-nadic anhydride, imidazole and filler |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02199117A (en) * | 1989-01-27 | 1990-08-07 | Nec Corp | Production of cured epoxy resin product |
-
2000
- 2000-11-08 DE DE10055247A patent/DE10055247A1/en not_active Withdrawn
-
2001
- 2001-10-10 WO PCT/DE2001/003881 patent/WO2002039487A2/en active Application Filing
- 2001-10-10 EP EP01993942A patent/EP1336196A2/en not_active Withdrawn
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0034207A1 (en) * | 1980-02-13 | 1981-08-26 | Robert Bosch Gmbh | Semiconductor device |
| DE3913488A1 (en) * | 1989-04-25 | 1990-10-31 | Bosch Gmbh Robert | Casting compsn. e.g. for encapsulating semiconductor - contg. cyclo-aliphatic and/or novolak epoxide] resin, methyl-nadic anhydride, imidazole and filler |
Non-Patent Citations (1)
| Title |
|---|
| DATABASE WPI Section Ch, Week 199037 Derwent Publications Ltd., London, GB; Class A21, AN 1990-280335 XP002189512 -& JP 02 199117 A (NEC CORP), 7. August 1990 (1990-08-07) * |
Also Published As
| Publication number | Publication date |
|---|---|
| DE10055247A1 (en) | 2002-05-16 |
| EP1336196A2 (en) | 2003-08-20 |
| WO2002039487A3 (en) | 2002-11-28 |
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