WO2002038496A1 - Cristaux constitues de nanotubes de carbone a paroi unique - Google Patents

Cristaux constitues de nanotubes de carbone a paroi unique Download PDF

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Publication number
WO2002038496A1
WO2002038496A1 PCT/IB2001/002123 IB0102123W WO0238496A1 WO 2002038496 A1 WO2002038496 A1 WO 2002038496A1 IB 0102123 W IB0102123 W IB 0102123W WO 0238496 A1 WO0238496 A1 WO 0238496A1
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Prior art keywords
substrate
carbon nanotubes
walled carbon
precursor
nanotube
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PCT/IB2001/002123
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English (en)
Inventor
James Gimzewski
Jin Won Seo
Reto Schlittler
Mark E. Welland
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International Business Machines Corporation
University Of Cambridge
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Priority to JP2002541040A priority Critical patent/JP2004513054A/ja
Priority to EP01982648A priority patent/EP1337461A1/fr
Priority to AU2002214190A priority patent/AU2002214190A1/en
Priority to KR10-2003-7006426A priority patent/KR20040010558A/ko
Priority to US10/416,553 priority patent/US20040115114A1/en
Publication of WO2002038496A1 publication Critical patent/WO2002038496A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • C01B32/16—Preparation
    • C01B32/162—Preparation characterised by catalysts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C30B23/005—Controlling or regulating flux or flow of depositing species or vapour
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2202/00—Structure or properties of carbon nanotubes
    • C01B2202/02—Single-walled nanotubes

Definitions

  • the invention is related to a method of manufacturing single-walled carbon nanotubes by promoting self-assembly of single crystals of single-walled carbon nanotubes using thermolysis of nano-patterned precursors.
  • a higher ordering degree of the grown nanotubes than with known methods can be achieved while the synthesis of these highly ordered single crystals of single-walled carbon nanotubes results in extended structures with length dimensions on the micron scale. They are formed from nanotubes that have identical diameter and chirality within each crystal but which may differ between the crystals.
  • single-walled carbon nanotubes can be produced as a highly ordered bulk material on the micron scale which is a first step for the synthesis of bulk macroscopic crystalline material.
  • the invention hence represents a significant advance in the synthesis of crystals containing a high number of well-aligned ordered single-walled carbon nanotubes all of which are physically identical in nature.
  • Carbon nanotubes have been the subject of intense research since their discovery in 1991.
  • One of the most desirable aims of carbon nanotube fabrication is to form large uniform and ordered nano- and microstructures and eventually bulk materials.
  • single- walled carbon nanotubes range from structural materials with extraordinary mechanical properties down to nanoelectronic components with a potential to circumvent Moore's Law.
  • Single- walled carbon nanotubes can act as ultimate probe tips for scanned probe microscopy with the added ability to chemically functionalize the apex.
  • These nanostructures are also usable for forming microbalances, gas detectors or even energy storage devices.
  • the use of single- walled carbon nanotubes in the field emission mode for displays or as electrodes for organic light emitting diodes or for electron beam sources in lithography and microscopy are of clear future technological significance.
  • single-walled carbon nanotubes traditionally uses harsh conditions such as laser ablation of carbon rods or a direct current arc discharge between carbon electrodes in an inert gas environment, such as described in "Fullerene Nanotubes: C ⁇ ,ooo,ooo and Beyond", Yakobson and Smalley, American Scientist, Vol. 85, No. 4, July-August 1997, pp. 324-337.
  • metal catalyst like Co, Ni, Fe, or Mo increases the yield of single-walled carbon nanotubes.
  • the resulting material consists however only of an entangled and poorly ordered mat of single-walled carbon nanotubes although each nanotube can be several hundreds of microns long.
  • US Patent 5424054 presents a method for manufacturing hollow fibers having a cylindrical wall comprising a single layer of carbon atoms, but also here the produced fibers have no controlled orientation.
  • a method of manufacturing single-walled carbon nanotubes comprising the steps of providing on a substrate at least one pillar comprising alternate layers of a first precursor material comprising fullerene molecules and a second precursor material comprising a catalyst, and heating the at least one pillar. During the heating, crystals comprising single-walled carbon nanotubes grow.
  • the precursor materials can be provided by thermal evaporation.
  • the fullerene molecules C60 or C82 molecules can be preferably used.
  • each layer may have a thickness between 5 and 30 nm.
  • the precursor materials can be deposited through a shadow mask comprising one or more apertures.
  • a shadow mask has the advantage to be suited for not only providing an aperture for creating one pillar, but with such a shadow mask a large number of such pillars can be fabricated in parrallel.
  • the fabrication of the apertures in the shadow mask can be done in parallel as well, e.g. by a lithography process.
  • the substrate can be selected to comprise thermally oxidized silicon or molybdenum in the form of a grid or as a solid film provided on a silicon wafer.
  • the substrate can also be selected to have a rough facetted surface such that it offers crystallization sites, i.e. seed locations from where the crystals respectively the nanotubes can grow.
  • the substrate ideally is seletced to have a surface structure that helps the pillars to stay confined also during the heating step. It is found that the better the confinement of the pillars on the surface, the higher the yield in precisely aligned crystals.
  • the substrate is optimally selected, if it on one hand does not or only to a negligible extent participate in the chemical reaction that takes place during the heating step. It furthermore should have the property to effectively keep the pillars confined thereon. A diffusion of the pillar structure on the surface reduces the yield.
  • Molybdenum or silicondioxide have been found to be materials for the substrate that meet with both of the above criteria. Particularly molybdenum is found to offer through its surface structure numerous crystallization sites. Instead of a bulk substrate, any layered structure comprising different materials can be used. For the manufacturing method, the upmost layer is the one that influences the process and which herein is referred to as the substrate.
  • the evaporation of the precursor materials can be performed at a pressure of around 10 "9
  • the evaporation can be controlled by using an electromechanical shutter and an in situ balance for monitoring the deposition rate of the precursor materials.
  • the evaporation can be controlled such that the thickness of the layers decreases with their distance from the substrate. This decreasing thickness again increases the yield and it is believed that the reduction in thickness is directly leading to the effect that less of the catalyst is transported towards the tip of the growing crystal.
  • the evaporation of a catalyst like Ni is technically not so easy which makes it desirable to utilize only the minimum necessary amount for the manufacturing process. Hence the amount of catalyst material can be reduced by the thinner layers. Since it is also believed that the growth of the crystal begins at the basis of the pillar, less material transport form the layers which are remote from the substrate is performed with the layers with reduced thickness.
  • the heating can be performed up to a temperature of essentially 950°C in a vacuum of essentially 10 "6 Torr or in an essentially inert gas atmosphere, for a time between 3 minutes and an hour. Thereby better results are obtained. A heating time in the minute range is in principle seen sufficient which means that a longer heating does not significantly improve the result.
  • a precursor arrangement for manufacturing single-walled carbon nanotubes which comprises on a substrate at least one pillar comprising alternate layers of a first precursor material comprising fullerene molecules and a second precursor material comprising a catalyst.
  • the layers may have a thickness that decreases with their distance from the substrate.
  • the substrate may comprise thermally oxidized silicon or molybdenum in the form of a grid or as a solid film provided on a silicon wafer.
  • the catalyst may comprise a magnetic material, preferably a metal being selected from the group Ni, Co, Fe, Mo.
  • a nanotube arrangement comprising a substrate and thereupon at least one crystal comprising a bundle of single-walled carbon nanotubes with identical orientation and structure.
  • the nanotube arrangement can be integrated in a display, electrical circuit, switching element or sensor element.
  • a further aspect of the invention is to provide a nanotube crystal comprising a bundle of straight single-walled carbon nanotubes with essentially identical orientation and structure.
  • Fig. 1 a schematic view of an apparatus for manufacturing single-wall carbon nanotubes in an evaporation step
  • Fig. 2 a schematic view of an apparatus for manufacturing single-wall carbon nanotubes in a heating step
  • Fig. 3 a schematic view of a single pillar as precursor structure for manufacturing single-wall carbon nanotubes
  • Fig. 4a a transmission electron microscope (TEM) micrograph of a crystal containing a bundle of single-wall carbon nanotubes
  • Fig. 4b a magnified portion of the TEM micrograph of fig. 2a
  • Fig. 4c a schematic view of a bundle of single-wall carbon nanotubes
  • Fig. 6 an electron diffraction pattern from bundle with single-walled carbon nanotubes.
  • Crystals of single-walled carbon nanotubes are produced using a method involving nanoscale patterning of solid-state precursor materials. Controlled mixtures of fullerenes, here C60 molecules and Nickel as catalyst are evaporated through nanometer-scale apertures of a patterned evaporation mask onto a molybdenum substrate. The resulting structures are then thermolysed under vacuum. A combination of electron diffraction studies and electron energy loss spectroscopy (EELS) confirms that the produced structures are almost perfect rod-like crystals of single-walled carbon nanotubes oriented normal to the surface of the substrate.
  • EELS electron energy loss spectroscopy
  • figure 1 a first schematic view of an apparatus for manufacturing single-wall carbon nanotubes is depicted.
  • a reaction chamber 1 comprises four openings, one being penetrated by a sample-holder 9 for holding a substrate 4 and a patterned evaporation mask 7, also referred to as shadow mask, the second opening being penetrated by a first tool support 11, the third opening being penetrated by a second tool support 12.
  • the fourth opening is provided with a hose 13 for evacuating the reaction chamber 1 and/or filling in some gas, such as an inert gas like Argon. Inert gases are suitable for avoiding the builing of carbon dioxide from the carbon material provided.
  • the first tool support 11 holds an oscillating quartz 6 serving as a microbalance for controlling the thickness of a deposited layer.
  • the second tool support 12 holds an evaporation source 10.
  • the evaporation source 10 is emitting material through apertures 14 in the patterned evaporation mask 7 towards the substrate 4.
  • the evaporation source serves for evaporating here two precursor materials 15, 16.
  • a first precursor material 15 is a fullerene and a second precursor material 16 is a catalyst.
  • the precursor materials 15, 16 may also comprise additional substances, as long as the crystal growth is achievable.
  • the evaporation is performed in a way that alternate layers of the precursor materials 15, 16 are deposited on the substrate 4.
  • the evaporation source 10 provides all the different precursor materials 15, 16 whose evaporation is controlled in an alternating fashion, or the evaporation source 10 serves only for depositing only one of the precursor materials 15, 16 and is then exchanged against another evaporation source 10 with the other of the precursor materials 15, 16.
  • the depicted solution provides both precursor materials 15, 16 at the same time in that evaporators for both precursor materials 15, 16 are put side by side at the evaporation source 10 with an isolation wall between them.
  • a shuttering mechanism 15 is provided for alternatingly allowing only one of the precursor materials 15,
  • the sample holder 9 is retracted while the oscillating quartz 6 is moved at the position where the substrate 4 is positioned during the evaporation step. An in situ measurement is performed while the quartz's frequency is monitored. Thus the exact deposition rate can be measured and used for determining the layer thickness for the precursor materials 15, 16 to be deposited on the substrate 4.
  • the apparatus is modified as depicted in figure 2.
  • the second tool support 12 is altered to hold the substrate 4 with the pillars 8 on it, mounted onto a heater 5. With this arrangement the substrate 4 with the pillars 8 can be heated.
  • FIG 3 a schematic view of a single pillar 8 as precursor structure for manufacturing the single-wall carbon nanotubes 19 is shown.
  • the precursor structure from which the nanotubes 19 are grown consists here of a hetero structure comprising alternate layers of Ceo molecules being the first precursor material 15 and Nickel being the second precursor material 16, thermally evaporated. Some 6 or 7 layers with thicknesses of 10-20 nm are deposited on top of each other.
  • the precursor materials 15, 16 are deposited through the shadow mask 7, representing a sort of nano-sieve, having several thousand apertures 14 with a diameter of 300 nm and with a pitch of 1 micron. This method of deposition generates small nucleation sites that enable subsequent self assembly of the single-walled carbon nanotube crystals 20.
  • the material can also be deposited on a substrate 4 with a rough facetted surface, less nanotubes 19 are produced in preference to disordered platelets.
  • some seed location i.e. nucleation site or crystallization site is the location where the crystal growth initiates.
  • the pillar 8 serves only as material supply for the crystal 20 growing nearby.
  • the pillar 8 has here a diameter of 300 nm but it can generally be stated that the lateral dimensions of the pillar 8 can be selected in a broader range. Although excellent results can be obtained with the diameter being essentially around 300 nm, a bigger diameter like 500 nm or more should lead to accepatble results as well.
  • the lateral dimensions of the pillars 8 determine the total amount of the precursor materials 15, 16 that are involved in the growth of the corresponding crystal 20. Each growing crystal 20 has hence its reservoir of precursor materials 15, 16 from which it gets its material supplied.
  • the predetermination of the material supply has the effect that the different precursor materials 15, 16 used in the growth of the corresponding crystal 20 are predetermined in their amount and position.
  • the movement of the molecules of the precursor materials 15, 16 is hence rather confined within the pillar area and a less chaotic movement leading to a more determined growth process can result therefrom.
  • the concentration of the precursor materials 15, 16 relatively to each other can have a decisive effect, which means that the amount of the second precursor material 16 which is necessary for helping the first precursor material 15 to grow into the desired nanotube form, should neither be substantially exceeded nor substantially fallen below of.
  • the confinement of the precursor materials 15, 16 in their pillar 8 leads to a preciser ratio between the two precursor materials 15, 16 that contribute to the crystal growth of a single crystal 20.
  • the pillars 8 have also a certain predetermined distance from each other, a mutual disturbing effect of the growing crystals is reduced with respect to a bulk precursor material system. Hence growth of each single crystal 20 at its crystallisation point is not or only negligibly interfered with by the growth process of an adjacent crystal 20.
  • the pillars 8 have hence a distance from each other and this distance reduces the mutual interference of the growth process of the respective crystals, respectively nanotubes 19.
  • the pillars 8 have a lateral dimension such that the amount of the precursor materials 15, 16 is confined to provide the material for a single crystal 20 being a bundle of nanotubes 19.
  • the pillar shape need not be round or square in but can have any form that is deemed appropriate. For symmetry reasons the round shape is however preferred.
  • the bundle may range from a few to several hundred, thousand or even into millions of nanotubes 19.
  • nucleation sites on the substrate 4 it is possible to artificially grow the nucleation sites on the substrate 4 to enable controlled positioning of crystal growth.
  • Such creation of nucleation sites can e.g. be achieved by evaporating through the evaporation mask 7 a material, e.g. tungsten, that can serve as nucleation site on the substrate 4. Since the evaporation mask 7 has a shadowing effect, an evaporator for the nucleation material which is situated sufficiently apart from the evaporators for the precursor materials 15, 16 automatically generates the nucleation sites near the pillars 8. In contrast, the evaporators for the precursor materials 15, 16 should be situated closely together in order to avoid a lateral misalignment of the various layers in the pillar 8, in the case, both evaporators are situated simultaneously in the reaction chamber 1.
  • electromechanical shuttering combined with an in situ quartz crystal microbalance to monitor deposition rates, can be used to ensure that both Ceo and Ni can be evaporated sequentially to produce the desired structure.
  • the choice of substrate 4 is influenced by the fact that both C ⁇ Q and Ni are able to diffuse at high temperatures and the aim is to constrain both materials within the original 300nm evaporation area.
  • good results can be achieved with the silicon dioxide substrate 4
  • better results can be obtained with a molybdenum substrate 4 either in the form of a grid for subsequent transmission electron microscopy, or as a solid film sputtered on to a silicon wafer.
  • the arrangement is heated to 950°C in a vacuum of 10 6 Torr for a time which is chosen to lie between a few minutes and an hour.
  • High-resolution TEM (HREM) studies performed in a JEOL 4000FX microscope operating at 400 kV, for carrying out a detailed diffraction analysis in a 200 kV JEOL 2010 microscope show nanotube bundles to be present with diameters varying between 40nm and 900nm with lengths up to 2 microns.
  • the nanotubes 19 are straight and preferentially aligned parallel to the Mo-grid plane. All the nanotubes 19 are single-wall carbon nanotubes 19 forming long and straight bundles.
  • the wall diameters in a bundle are remarkably uniform and range from about 1.4nm to 2.3nm in individual bundles.
  • a typical HRTEM image of a bundle of nanotubes 19 is shown in figure 4a with a higher magnification image showing the internal structure of the nanotube bundle in figure 4b.
  • the bundle is -750 nm long and -50 nm diameter with a curved end cap.
  • Figure 4b shows the perfect regular arrangement of 1.6 nm diameter single-walled carbon nanotubes 19 in a bundle with no evidence of inhomogeneity or defect. This remarkable structural perfection is a characteristic of all nanotubes 19 produced using the described method.
  • Figure 4c shows a schematic view of a bundle of 7 nanotubes 19, as they are present in the result depicted in figures 4a, 4b, the nanotubes 19 each having a diameter of 1.6 nm.
  • the rods are carbon nanotube crystals 20, in the case they are grown on a Molybdenum grid both EELS giving the chemical composition, and electron diffraction, can be carried out.
  • An EELS spectrum of a rod acquired in a VG 501HB STEM operating at lOOkV with a dispersion of 0.1 eV per channel at the Carbon-K edge shows an intense pre-peak at 285 eV just below the main absorption threshold.
  • This pre-peak is a characteristic of the transitions to p* states in sp2-bonded carbon suggesting that graphite-like sheets are present in the nanotube 19.
  • the spectrum closely resembles previous EELS spectra of carbon nanotubes 19 and confirms that they are indeed made of carbon.
  • the presence of Nickel in the EELS spectra is only detected during the growth phase of the nanotube 19 with no evidence of neither Nickel nor Molybdenum in the fully-grown nanotube 19 .
  • two primary directions are indicated corresponding to the half single-walled carbon nanotubes wall width of 0.99 nm and orthogonal to this a spacing of 0.28 nm corresponding to the spacing of the graphite hexagons.
  • the weak super reflections have a spacing that corresponds to the double of 0.28nm.
  • the diffraction pattern indicates that it is made up of physically identical single- walled carbon nanotubes 19 of either chiral or armchair structure.
  • a final structural observation is that relating to the shape of the individual crystals. Previous observations of bundles have demonstrated that the single- walled carbon nanotubes 19 are packed in a hexagonal structure looking towards the end of the bundle.
  • the nanotubes 19 respectively bundles thereof grown with the described method can be utilized in a number of devices such as switching devices, displays, or sensors.
  • Depositing a layer of ITO and/or organic LED material on a layer of nanotubes 19 can be used to manufacture a display.
  • Other embodiments comprise nanoelectronic circuits where nanotubes operate as active devices like FETs or as wiring.
  • nanotube-based vacuum tube amplifiers and triodes with the nanotube acting as the emitter can be built, whereby the nanotube is used as a tip which provides stable low- oltage operation.
  • Nanomechanical sensors and AFM tips can be supplied with a nanotube as sensor tip. Simply positioning the crystallisation point where the later tip shall be located achieves the desired structure.
  • the nanotube can be a movable part in switching devices or be integrated into a GMR head.

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Abstract

L'invention concerne un procédé de fabrication de nanotubes de carbone à paroi unique consistant à établir sur un substrat au moins un pilier comprenant des couches alternées d'un premier matériau précurseur constitué de molécules de fullerène et d'un second matériau précurseur constitué d'un catalyseur, et à chauffer ce pilier. L'invention concerne aussi un arrangement de précurseur destiné à fabriquer des nanotubes de carbone à paroi unique constitué d'un substrat sur lequel repose au moins un pilier constitué de couches alternées d'un premier précurseur contenant des molécules de fullerène et d'un second précurseur contenant un catalyseur. Dans une troisième réalisation, l'invention concerne un arrangement de nanotubes constitué d'un substrat sur lequel repose au moins un cristal constitué d'un faisceau de nanotubes de carbone à paroi unique possédant essentiellement une orientation et une structure identiques.
PCT/IB2001/002123 2000-11-13 2001-11-12 Cristaux constitues de nanotubes de carbone a paroi unique WO2002038496A1 (fr)

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Application Number Priority Date Filing Date Title
JP2002541040A JP2004513054A (ja) 2000-11-13 2001-11-12 単壁型カーボン・ナノチューブの製造方法
EP01982648A EP1337461A1 (fr) 2000-11-13 2001-11-12 Crystaux constitues de nanotubes de carbone a paroi unique
AU2002214190A AU2002214190A1 (en) 2000-11-13 2001-11-12 Crystals comprising single-walled carbon nanotubes
KR10-2003-7006426A KR20040010558A (ko) 2000-11-13 2001-11-12 단일벽 탄소 나노튜브를 포함하는 결정
US10/416,553 US20040115114A1 (en) 2000-11-13 2001-11-12 Crystals comprising single-walled carbon nanotubes

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EP00124766.7 2000-11-13
EP01100543.6 2001-01-10
EP01100543 2001-01-10

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004106234A1 (fr) * 2003-02-07 2004-12-09 Bussan Nanotech Research Institute Inc. Procede de production d'un nanotube de carbone monocouche de diametre uniforme
EP1871934A1 (fr) * 2005-03-29 2008-01-02 Hyperion Catalysis International, Inc. Procede de preparation de nanotubes de carbone a paroi simple a partir d'une couche metallique
EP2001794A2 (fr) * 2006-03-29 2008-12-17 Hyperion Catalysis International, Inc. Procédé de préparation de nanotubes de carbone à paroi simple à partir d'une couche métallique
US7947247B2 (en) 2005-03-29 2011-05-24 Hyperion Catalysis International, Inc. Method for preparing single walled carbon nanotubes from a metal layer
US7951351B2 (en) 2006-03-29 2011-05-31 Hyperion Catalysis International, Inc. Method for preparing uniform single walled carbon nanotubes

Families Citing this family (8)

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