WO2002033735A3 - Vorrichtung zum thermischen behandeln von substraten - Google Patents

Vorrichtung zum thermischen behandeln von substraten Download PDF

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Publication number
WO2002033735A3
WO2002033735A3 PCT/EP2001/010649 EP0110649W WO0233735A3 WO 2002033735 A3 WO2002033735 A3 WO 2002033735A3 EP 0110649 W EP0110649 W EP 0110649W WO 0233735 A3 WO0233735 A3 WO 0233735A3
Authority
WO
WIPO (PCT)
Prior art keywords
thermally treating
treating substrates
substrates
adjacent
heating elements
Prior art date
Application number
PCT/EP2001/010649
Other languages
English (en)
French (fr)
Other versions
WO2002033735A2 (de
Inventor
Manfred Falter
Original Assignee
Mattson Thermal Products Gmbh
Manfred Falter
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mattson Thermal Products Gmbh, Manfred Falter filed Critical Mattson Thermal Products Gmbh
Priority to US10/399,380 priority Critical patent/US6965093B2/en
Publication of WO2002033735A2 publication Critical patent/WO2002033735A2/de
Publication of WO2002033735A3 publication Critical patent/WO2002033735A3/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

Um eine homogenere thermische Behandlung von Substraten zu ermöglichen sieht die vorliegende Erfindung eine Vorrichtung zum thermischen Behandeln von Substraten, insbesondere Halbleiterwafern, mit wenigstens zwei benachbarten, im wesentlichen parallel angeordneten, jeweils wenigstens einen Glühdraht aufweisenden Heizelementen vor, wobei die zwei benachbarten Heizelemente wenigstens stückweise hinsichtlich gewickelter und ungewickelter Abschnitte ihres Glühdrahtes etwa komplementär zueinander ausgebildet sind.
PCT/EP2001/010649 2000-10-16 2001-09-14 Vorrichtung zum thermischen behandeln von substraten WO2002033735A2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US10/399,380 US6965093B2 (en) 2000-10-16 2001-09-14 Device for thermally treating substrates

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10051125A DE10051125A1 (de) 2000-10-16 2000-10-16 Vorrichtung zum thermischen Behandeln von Substraten
DE10051125.2 2000-10-16

Publications (2)

Publication Number Publication Date
WO2002033735A2 WO2002033735A2 (de) 2002-04-25
WO2002033735A3 true WO2002033735A3 (de) 2002-06-27

Family

ID=7659895

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2001/010649 WO2002033735A2 (de) 2000-10-16 2001-09-14 Vorrichtung zum thermischen behandeln von substraten

Country Status (4)

Country Link
US (1) US6965093B2 (de)
DE (1) DE10051125A1 (de)
TW (1) TW540146B (de)
WO (1) WO2002033735A2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7115837B2 (en) * 2003-07-28 2006-10-03 Mattson Technology, Inc. Selective reflectivity process chamber with customized wavelength response and method
US20060291833A1 (en) * 2005-06-01 2006-12-28 Mattson Techonology, Inc. Switchable reflector wall concept
JP5013044B2 (ja) * 2005-11-30 2012-08-29 ウシオ電機株式会社 光照射式加熱装置
JP5282409B2 (ja) * 2008-02-25 2013-09-04 ウシオ電機株式会社 光照射式加熱方法及び光照射式加熱装置
WO2012009636A1 (en) * 2010-07-15 2012-01-19 Despatch Industries Limited Partnership Firing furnace configuration for thermal processing system
DE102012005916B3 (de) 2012-03-26 2013-06-27 Heraeus Noblelight Gmbh Vorrichtung zur Bestrahlung eines Substrats
DE102012106667B3 (de) 2012-07-23 2013-07-25 Heraeus Noblelight Gmbh Vorrichtung zur Bestrahlung eines Substrats
DE102013105959B4 (de) 2013-06-07 2019-06-19 Heraeus Noblelight Gmbh Betriebsverfahren und Vorrichtung zur Bestrahlung eines Substrats
WO2016126381A1 (en) * 2015-02-05 2016-08-11 Applied Materials, Inc. Rapid thermal processing chamber with linear control lamps

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4698486A (en) * 1984-02-28 1987-10-06 Tamarack Scientific Co., Inc. Method of heating semiconductor wafers in order to achieve annealing, silicide formation, reflow of glass passivation layers, etc.
WO2000030157A1 (en) * 1998-11-16 2000-05-25 Fsi International, Inc. Equipment for uv wafer heating and photochemical processing
WO2000034986A1 (en) * 1998-12-10 2000-06-15 Steag Rtp Systems, Inc. Rapid thermal processing chamber for processing multiple wafers
US6081072A (en) * 1997-12-12 2000-06-27 Ushiodenki Kabushiki Kaisha Filament lamp for wafer heating and heating light source

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4654509A (en) * 1985-10-07 1987-03-31 Epsilon Limited Partnership Method and apparatus for substrate heating in an axially symmetric epitaxial deposition apparatus
JP2780866B2 (ja) * 1990-10-11 1998-07-30 大日本スクリーン製造 株式会社 光照射加熱基板の温度測定装置
JPH0897167A (ja) * 1994-09-28 1996-04-12 Tokyo Electron Ltd 処理装置及び熱処理装置
US6067931A (en) * 1996-11-04 2000-05-30 General Electric Company Thermal processor for semiconductor wafers
US5951896A (en) * 1996-12-04 1999-09-14 Micro C Technologies, Inc. Rapid thermal processing heater technology and method of use
EP0924500B1 (de) * 1997-12-08 2006-10-18 STEAG RTP Systems GmbH Verfahren zum Messen elektromagnetischer Strahlung
US6316747B1 (en) * 1998-03-02 2001-11-13 Steag Rtp Systems Gmbh Apparatus for the thermal treatment of substrates
DE19952017A1 (de) 1999-10-28 2001-05-17 Steag Rtp Systems Gmbh Verfahren und Vorrichtung zum thermischen Behandeln von Substraten

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4698486A (en) * 1984-02-28 1987-10-06 Tamarack Scientific Co., Inc. Method of heating semiconductor wafers in order to achieve annealing, silicide formation, reflow of glass passivation layers, etc.
US6081072A (en) * 1997-12-12 2000-06-27 Ushiodenki Kabushiki Kaisha Filament lamp for wafer heating and heating light source
WO2000030157A1 (en) * 1998-11-16 2000-05-25 Fsi International, Inc. Equipment for uv wafer heating and photochemical processing
WO2000034986A1 (en) * 1998-12-10 2000-06-15 Steag Rtp Systems, Inc. Rapid thermal processing chamber for processing multiple wafers

Also Published As

Publication number Publication date
US6965093B2 (en) 2005-11-15
DE10051125A1 (de) 2002-05-02
WO2002033735A2 (de) 2002-04-25
TW540146B (en) 2003-07-01
US20040089649A1 (en) 2004-05-13

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