WO2002025782A3 - Emetteur optique comprenant un laser a reglage progressif - Google Patents
Emetteur optique comprenant un laser a reglage progressif Download PDFInfo
- Publication number
- WO2002025782A3 WO2002025782A3 PCT/US2001/029706 US0129706W WO0225782A3 WO 2002025782 A3 WO2002025782 A3 WO 2002025782A3 US 0129706 W US0129706 W US 0129706W WO 0225782 A3 WO0225782 A3 WO 0225782A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- optical transmitter
- tunable laser
- mirror
- laser
- stepwise tunable
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18375—Structure of the reflectors, e.g. hybrid mirrors based on metal reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02253—Out-coupling of light using lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/1062—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using a controlled passive interferometer, e.g. a Fabry-Perot etalon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0215—Bonding to the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
- H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/041—Optical pumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
- H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0617—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium using memorised or pre-programmed laser characteristics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
- H01S5/0687—Stabilising the frequency of the laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18377—Structure of the reflectors, e.g. hybrid mirrors comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP01973387A EP1364432A2 (fr) | 2000-09-22 | 2001-09-21 | Emetteur optique comprenant un laser a reglage progressif |
AU2001292973A AU2001292973A1 (en) | 2000-09-22 | 2001-09-21 | Optical transmitter comprising a stepwise tunable laser |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/668,905 US6741629B1 (en) | 2000-09-22 | 2000-09-22 | Optical transmitter having optically pumped vertical external cavity surface emitting laser |
US09/688,905 | 2000-09-22 | ||
US09/930,841 US6611546B1 (en) | 2001-08-15 | 2001-08-15 | Optical transmitter comprising a stepwise tunable laser |
US09/930,841 | 2001-08-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2002025782A2 WO2002025782A2 (fr) | 2002-03-28 |
WO2002025782A3 true WO2002025782A3 (fr) | 2003-09-25 |
Family
ID=27100015
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2001/029706 WO2002025782A2 (fr) | 2000-09-22 | 2001-09-21 | Emetteur optique comprenant un laser a reglage progressif |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP1364432A2 (fr) |
AU (1) | AU2001292973A1 (fr) |
WO (1) | WO2002025782A2 (fr) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040009486A1 (en) | 1999-10-29 | 2004-01-15 | Sorge Joseph A. | Compositions and methods utilizing DNA polymerases |
US6631146B2 (en) | 2001-07-06 | 2003-10-07 | Intel Corporation | Tunable laser control system |
US6798800B2 (en) * | 2002-12-30 | 2004-09-28 | Intel Corporation | Method and apparatus to sense temperature of thermal tuning elements in tunable optical devices |
DE102004011456A1 (de) * | 2004-01-30 | 2005-08-18 | Osram Opto Semiconductors Gmbh | Oberflächenemittierender Halbleiterlaser mit einem Interferenzfilter |
EP1560306B1 (fr) | 2004-01-30 | 2014-11-19 | OSRAM Opto Semiconductors GmbH | VCSEL avec filtre optique |
US9312662B1 (en) | 2014-09-30 | 2016-04-12 | Lumentum Operations Llc | Tunable laser source |
CN109921275B (zh) * | 2017-12-13 | 2024-07-19 | 朗美通通讯技术(深圳)有限公司 | 快速调频的外腔激光器 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3789318A (en) * | 1971-05-14 | 1974-01-29 | Thomson Csf | Stimulated emission radiation source with adjustable wavelength |
EP0485187A2 (fr) * | 1990-11-07 | 1992-05-13 | Oki Electric Industry Co., Ltd. | Dispositif pour la génération du deuxième harmonique utilisant un laser comme source de la fréquence fondamentale |
US5131002A (en) * | 1991-02-12 | 1992-07-14 | Massachusetts Institute Of Technology | External cavity semiconductor laser system |
US5555253A (en) * | 1995-01-09 | 1996-09-10 | Amoco Corporation | Technique for locking a laser diode to a passive cavity |
WO1999012235A1 (fr) * | 1997-09-05 | 1999-03-11 | Micron Optics, Inc. | Lasers fabry-perot accordables, a emission par la surface |
WO2000024095A1 (fr) * | 1998-10-16 | 2000-04-27 | New Focus, Inc. | Laser a cavite exterieure accordable en continu |
US6097742A (en) * | 1999-03-05 | 2000-08-01 | Coherent, Inc. | High-power external-cavity optically-pumped semiconductor lasers |
-
2001
- 2001-09-21 EP EP01973387A patent/EP1364432A2/fr not_active Withdrawn
- 2001-09-21 AU AU2001292973A patent/AU2001292973A1/en not_active Abandoned
- 2001-09-21 WO PCT/US2001/029706 patent/WO2002025782A2/fr not_active Application Discontinuation
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3789318A (en) * | 1971-05-14 | 1974-01-29 | Thomson Csf | Stimulated emission radiation source with adjustable wavelength |
EP0485187A2 (fr) * | 1990-11-07 | 1992-05-13 | Oki Electric Industry Co., Ltd. | Dispositif pour la génération du deuxième harmonique utilisant un laser comme source de la fréquence fondamentale |
US5131002A (en) * | 1991-02-12 | 1992-07-14 | Massachusetts Institute Of Technology | External cavity semiconductor laser system |
US5555253A (en) * | 1995-01-09 | 1996-09-10 | Amoco Corporation | Technique for locking a laser diode to a passive cavity |
WO1999012235A1 (fr) * | 1997-09-05 | 1999-03-11 | Micron Optics, Inc. | Lasers fabry-perot accordables, a emission par la surface |
WO2000024095A1 (fr) * | 1998-10-16 | 2000-04-27 | New Focus, Inc. | Laser a cavite exterieure accordable en continu |
US6097742A (en) * | 1999-03-05 | 2000-08-01 | Coherent, Inc. | High-power external-cavity optically-pumped semiconductor lasers |
Non-Patent Citations (5)
Title |
---|
GARNACHE A ET AL: "DIODE-PUMPED BROADBAND VERTICAL-EXTERNAL-CAVITY SURFACE-EMITTING SEMICONDUCTOR LASER APPLIED TO HIGH-SENSITIVITY INTRACAVITY ABSORPTION SPECTROSCOPY", JOURNAL OF THE OPTICAL SOCIETY OF AMERICA - B, OPTICAL SOCIETY OF AMERICA, WASHINGTON, US, vol. 17, no. 9, September 2000 (2000-09-01), pages 1589 - 1598, XP001056148, ISSN: 0740-3224 * |
HOLM M A ET AL: "ACTIVELY STABILIZED SINGLE-FREQUENCY VERTICAL-EXTERNAL-CAVITY ALGAAS LASER", IEEE PHOTONICS TECHNOLOGY LETTERS, IEEE INC. NEW YORK, US, vol. 11, no. 12, December 1999 (1999-12-01), pages 1551 - 1553, XP000924493, ISSN: 1041-1135 * |
MICHLER P ET AL: "EMISSION DYNAMICS OF IN0.2GA0.8AS/GAAS LAMBDA AND 2 LAMBDA MICROCAVITY LASERS", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 68, no. 2, 8 January 1996 (1996-01-08), pages 156 - 158, XP000552697, ISSN: 0003-6951 * |
ORTSIEFER M ET AL: "Room-temperature operation of index-guided 1.55 µm InP-based vertical-cavity surface-emitting laser", ELECTRONICS LETTERS, IEE STEVENAGE, GB, vol. 36, no. 5, 2 March 2000 (2000-03-02), pages 437 - 439, XP006014948, ISSN: 0013-5194 * |
WRIGHT P D ET AL: "Homogeneous or inhomogeneous line broadening in a semiconductor laser: observations on In/sub 1-x/Ga/sub x/P/sub 1-z/As/sub z/ double heterojunctions in an external grating cavity", APPLIED PHYSICS LETTERS, 1 JULY 1976, USA, vol. 29, no. 1, pages 18 - 20, XP002241873, ISSN: 0003-6951 * |
Also Published As
Publication number | Publication date |
---|---|
AU2001292973A1 (en) | 2002-04-02 |
WO2002025782A2 (fr) | 2002-03-28 |
EP1364432A2 (fr) | 2003-11-26 |
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