WO2002025782A3 - Emetteur optique comprenant un laser a reglage progressif - Google Patents

Emetteur optique comprenant un laser a reglage progressif Download PDF

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Publication number
WO2002025782A3
WO2002025782A3 PCT/US2001/029706 US0129706W WO0225782A3 WO 2002025782 A3 WO2002025782 A3 WO 2002025782A3 US 0129706 W US0129706 W US 0129706W WO 0225782 A3 WO0225782 A3 WO 0225782A3
Authority
WO
WIPO (PCT)
Prior art keywords
optical transmitter
tunable laser
mirror
laser
stepwise tunable
Prior art date
Application number
PCT/US2001/029706
Other languages
English (en)
Other versions
WO2002025782A2 (fr
Inventor
Arnaud Garnache
Daniele Romanini
Frederic Stoeckel
Alexandre Katchanov
Guido Knippels
Barbara Paldus
Chris Rella
Bruce Richman
Marc Levenson
Original Assignee
Blue Leaf Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/668,905 external-priority patent/US6741629B1/en
Priority claimed from US09/930,841 external-priority patent/US6611546B1/en
Application filed by Blue Leaf Inc filed Critical Blue Leaf Inc
Priority to AU2001292973A priority Critical patent/AU2001292973A1/en
Priority to EP01973387A priority patent/EP1364432A2/fr
Publication of WO2002025782A2 publication Critical patent/WO2002025782A2/fr
Publication of WO2002025782A3 publication Critical patent/WO2002025782A3/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18375—Structure of the reflectors, e.g. hybrid mirrors based on metal reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02253—Out-coupling of light using lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/1062—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using a controlled passive interferometer, e.g. a Fabry-Perot etalon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0215—Bonding to the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0617—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium using memorised or pre-programmed laser characteristics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/0687—Stabilising the frequency of the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18377—Structure of the reflectors, e.g. hybrid mirrors comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

Un laser utile en tant que partie d'un émetteur à fibre optique sur des longueurs d'onde multiples, ne possède qu'un seul mode, un miroir d'amplification à semi-conducteur de puits quantiques multiples en tant qu'élément d'amplification et comprend un deuxième miroir constituant une cavité optique dont la longueur définit une séquence de modes optiques. L'élément d'amplification possède un dispositif servant à régler le laser d'un mode à l'autre par modification d'une température du miroir d'amplification.
PCT/US2001/029706 2000-09-22 2001-09-21 Emetteur optique comprenant un laser a reglage progressif WO2002025782A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
AU2001292973A AU2001292973A1 (en) 2000-09-22 2001-09-21 Optical transmitter comprising a stepwise tunable laser
EP01973387A EP1364432A2 (fr) 2000-09-22 2001-09-21 Emetteur optique comprenant un laser a reglage progressif

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US09/668,905 US6741629B1 (en) 2000-09-22 2000-09-22 Optical transmitter having optically pumped vertical external cavity surface emitting laser
US09/688,905 2000-09-22
US09/930,841 2001-08-15
US09/930,841 US6611546B1 (en) 2001-08-15 2001-08-15 Optical transmitter comprising a stepwise tunable laser

Publications (2)

Publication Number Publication Date
WO2002025782A2 WO2002025782A2 (fr) 2002-03-28
WO2002025782A3 true WO2002025782A3 (fr) 2003-09-25

Family

ID=27100015

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/029706 WO2002025782A2 (fr) 2000-09-22 2001-09-21 Emetteur optique comprenant un laser a reglage progressif

Country Status (3)

Country Link
EP (1) EP1364432A2 (fr)
AU (1) AU2001292973A1 (fr)
WO (1) WO2002025782A2 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040009486A1 (en) 1999-10-29 2004-01-15 Sorge Joseph A. Compositions and methods utilizing DNA polymerases
US6631146B2 (en) 2001-07-06 2003-10-07 Intel Corporation Tunable laser control system
US6798800B2 (en) * 2002-12-30 2004-09-28 Intel Corporation Method and apparatus to sense temperature of thermal tuning elements in tunable optical devices
EP1560306B1 (fr) 2004-01-30 2014-11-19 OSRAM Opto Semiconductors GmbH VCSEL avec filtre optique
DE102004011456A1 (de) * 2004-01-30 2005-08-18 Osram Opto Semiconductors Gmbh Oberflächenemittierender Halbleiterlaser mit einem Interferenzfilter
US9312662B1 (en) 2014-09-30 2016-04-12 Lumentum Operations Llc Tunable laser source
CN109921275A (zh) * 2017-12-13 2019-06-21 深圳新飞通光电子技术有限公司 快速调频的外腔激光器

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3789318A (en) * 1971-05-14 1974-01-29 Thomson Csf Stimulated emission radiation source with adjustable wavelength
EP0485187A2 (fr) * 1990-11-07 1992-05-13 Oki Electric Industry Co., Ltd. Dispositif pour la génération du deuxième harmonique utilisant un laser comme source de la fréquence fondamentale
US5131002A (en) * 1991-02-12 1992-07-14 Massachusetts Institute Of Technology External cavity semiconductor laser system
US5555253A (en) * 1995-01-09 1996-09-10 Amoco Corporation Technique for locking a laser diode to a passive cavity
WO1999012235A1 (fr) * 1997-09-05 1999-03-11 Micron Optics, Inc. Lasers fabry-perot accordables, a emission par la surface
WO2000024095A1 (fr) * 1998-10-16 2000-04-27 New Focus, Inc. Laser a cavite exterieure accordable en continu
US6097742A (en) * 1999-03-05 2000-08-01 Coherent, Inc. High-power external-cavity optically-pumped semiconductor lasers

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3789318A (en) * 1971-05-14 1974-01-29 Thomson Csf Stimulated emission radiation source with adjustable wavelength
EP0485187A2 (fr) * 1990-11-07 1992-05-13 Oki Electric Industry Co., Ltd. Dispositif pour la génération du deuxième harmonique utilisant un laser comme source de la fréquence fondamentale
US5131002A (en) * 1991-02-12 1992-07-14 Massachusetts Institute Of Technology External cavity semiconductor laser system
US5555253A (en) * 1995-01-09 1996-09-10 Amoco Corporation Technique for locking a laser diode to a passive cavity
WO1999012235A1 (fr) * 1997-09-05 1999-03-11 Micron Optics, Inc. Lasers fabry-perot accordables, a emission par la surface
WO2000024095A1 (fr) * 1998-10-16 2000-04-27 New Focus, Inc. Laser a cavite exterieure accordable en continu
US6097742A (en) * 1999-03-05 2000-08-01 Coherent, Inc. High-power external-cavity optically-pumped semiconductor lasers

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
GARNACHE A ET AL: "DIODE-PUMPED BROADBAND VERTICAL-EXTERNAL-CAVITY SURFACE-EMITTING SEMICONDUCTOR LASER APPLIED TO HIGH-SENSITIVITY INTRACAVITY ABSORPTION SPECTROSCOPY", JOURNAL OF THE OPTICAL SOCIETY OF AMERICA - B, OPTICAL SOCIETY OF AMERICA, WASHINGTON, US, vol. 17, no. 9, September 2000 (2000-09-01), pages 1589 - 1598, XP001056148, ISSN: 0740-3224 *
HOLM M A ET AL: "ACTIVELY STABILIZED SINGLE-FREQUENCY VERTICAL-EXTERNAL-CAVITY ALGAAS LASER", IEEE PHOTONICS TECHNOLOGY LETTERS, IEEE INC. NEW YORK, US, vol. 11, no. 12, December 1999 (1999-12-01), pages 1551 - 1553, XP000924493, ISSN: 1041-1135 *
MICHLER P ET AL: "EMISSION DYNAMICS OF IN0.2GA0.8AS/GAAS LAMBDA AND 2 LAMBDA MICROCAVITY LASERS", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 68, no. 2, 8 January 1996 (1996-01-08), pages 156 - 158, XP000552697, ISSN: 0003-6951 *
ORTSIEFER M ET AL: "Room-temperature operation of index-guided 1.55 µm InP-based vertical-cavity surface-emitting laser", ELECTRONICS LETTERS, IEE STEVENAGE, GB, vol. 36, no. 5, 2 March 2000 (2000-03-02), pages 437 - 439, XP006014948, ISSN: 0013-5194 *
WRIGHT P D ET AL: "Homogeneous or inhomogeneous line broadening in a semiconductor laser: observations on In/sub 1-x/Ga/sub x/P/sub 1-z/As/sub z/ double heterojunctions in an external grating cavity", APPLIED PHYSICS LETTERS, 1 JULY 1976, USA, vol. 29, no. 1, pages 18 - 20, XP002241873, ISSN: 0003-6951 *

Also Published As

Publication number Publication date
WO2002025782A2 (fr) 2002-03-28
EP1364432A2 (fr) 2003-11-26
AU2001292973A1 (en) 2002-04-02

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