WO2002023610A1

WO2002023610A1 - Plasma machining device, and electrode plate, electrode supporter, and shield ring of the device

Info

Publication number: WO2002023610A1
Application number: PCT/JP2001/007985
Authority: WO
Inventors: Masahiro Ogasawara; Kazuya Kato; Toshifumi Nagaiwa; Kosuke Imafuku; Koichi Kazama
Original assignee: Tokyo Electron Limited
Priority date: 2000-09-14
Filing date: 2001-09-14
Publication date: 2002-03-21
Also published as: TW518690B; US20080156441A1; US20030155078A1

Abstract

A plasma machining device (1) applying a plasma machining to a machined substrate (W), wherein an upper electrode (21) opposed to a susceptor (5) as a lower electrode comprises an electrode supporter (22) and an electrode plate (23), a hollow (62) having the dimensions determined so as to produce a resonance at the frequency of a supplied high frequency power and to produce, therein, a field orthogonal to the electrode plate (23) is provided in the electrode supporter (22) at the center part of the boundary part between the electrode supporter and the electrode plate, and a shield ring surrounding the electrode plate (23) is formed in a shape having a lower surface flush with the electrode plate (23) with a material hard to be eroded by plasma, whereby the distribution of plasma can be made uniform, deterioration with elapse of time can be reduced, and fine machining can be performed.

Description

Description Plasma processing equipment and its electrode plate, electrode support, shield ring

The present invention relates to a plasma processing apparatus and its electrodes, electrode supports, and shield rings. Background art

Conventionally, for example, in a semiconductor manufacturing process, a plasma apparatus has been used as an apparatus for etching an insulating film on a surface of a semiconductor wafer or the like to form a contact hole, for example. Above all, the parallel plate type plasma equipment, in which electrodes are arranged above and below the processing chamber, has become the mainstream of plasma equipment because it has excellent uniformity, can process large-diameter wafers, and has a relatively simple equipment configuration. ing.

In a conventional parallel plate type etching apparatus, for example, as disclosed in Japanese Patent Application No. 2000-11616, electrodes are provided on the upper and lower sides of a processing chamber so as to face each other. The semiconductor wafer, which is the processing substrate, is placed on the lower electrode. An etching gas is introduced into the processing chamber, and high-frequency power is supplied to the lower electrode to generate plasma between the upper and lower electrodes, and the etching gas is dissociated. It is configured to etch the insulating film of the semiconductor wafer by the generated etchant component.

Fig. 3 is a diagram schematically showing the upper electrode and shield ring in Japanese Patent Application No. 2000-1116. As shown in FIG. 3, the upper electrode 12 1 has an electrode plate 123, an electrode support 122 located above the electrode plate 123, and a cavity 16 2 provided at the boundary between the two. In addition, the structure surrounding the upper electrode 12 1 is fixed to the upper part of the processing chamber of the plasma device by the insulating material 125, and the shield ring 15 5 is located below the insulating material 125. Are located. '

In this way, in order to meet the demands for finer processing, improved processing speed, and uniform processing, a shield ring 1555 protruding from the upper electrode surface to the lower electrode side is provided around the upper electrode 121. To confine the plasma, and the electrode plate 1 2 3 and the electrode support A cavity 162 is provided at the boundary with 122 to make the plasma uniform.

However, in the technique disclosed in Japanese Patent Application No. 2000-116, the protruding part of the shield ring protruding toward the lower electrode, which plays the role of confining the plasma, is scraped off over time, and the plasma It turned out that there was a problem that the distribution changed.

Fig. 16 is a diagram schematically showing another type of upper electrode 421 in a conventional etching apparatus. As shown in FIG. 16, the upper electrode 4 21 has an electrode plate 4 2 3 and an electrode support 4 2 2 located above the electrode plate 4 2 3. The electrode support 422 is made of, for example, aluminum. The electrode support 422 supports the electrode plate 423 and functions as a cooling plate for the electrode plate 423. The electrode plate 423 is mounted on the electrode support 422 so that it can be removed by screws 460, and maintenance is removed. For the electrode plate 423, for example, a silicon material or the like is used.

When plasma processing is performed using an etching system with a conventional upper electrode 421, the processing gas is introduced into the high-vacuum system, and high-frequency power is applied to raise the temperature inside the processing chamber. The aluminum material of the body 422 and the silicon material of the electrode plate 423 sometimes fused at the interface between them.

Fig. 17 is a cross-sectional view schematically showing a state in which the conventional upper electrode 421 has been fused after being used in the etching process. FIG. 4 is a view conceptually showing an electrode plate 4 2 3 on which adhesion has occurred. As shown in Figs. 17 and 18, at the interface between the electrode support 42 and the electrode plate 43, irregularities such as aluminum erosion 165 and silicon fusion 167 occur, resulting in a flat surface. Sex is impaired. However, when the electrode plate 423 removed for maintenance such as cleaning of the etching equipment is attached to the electrode support 422 again, the positional relationship of the unevenness is inevitably different from that before the removal. Therefore, when fixing with the screw 460 at the time of reattachment, stress concentrates on the projections of the electrode support 422 and the electrode plate 423, and the electrode plate 423 may crack. Was.

The present invention has been made in view of the above-mentioned problems of the conventional plasma apparatus, and an object of the present invention is to provide a plasma having a uniform distribution, less inferiority due to aging, and An object of the present invention is to provide a new and improved plasma processing apparatus capable of fine processing and its electrode plate, electrode support, and shield ring.

Another object of the present invention is to provide a plasma apparatus having a laser electrode plate which does not crack even when reattached while preventing fusion of silicon and aluminum, an electrode plate thereof, and an electrode support. That is. Disclosure of the invention

According to the present invention, there is provided a processing chamber, a first electrode on which an object to be processed can be placed in the processing chamber, a second electrode disposed opposite to the first electrode in the processing chamber, and a processing chamber. A processing gas supply system capable of introducing a processing gas into the chamber, an exhaust system capable of evacuating the processing chamber, and applying a high-frequency power to at least one of the first and second electrodes to convert the processing gas into plasma, In a plasma processing apparatus provided with a high-frequency power supply system for performing predetermined plasma processing on a processing body, the second electrode is an electrode plate made of a conductor or a semiconductor provided so as to face the first electrode. A conductive support provided on the surface of the electrode plate opposite to the processing chamber for supporting the electrode plate, and a hollow portion provided at the center of the support. The electrode plate inside the processing chamber. A plasma processing apparatus provided with a shield ring having substantially the same surface, and the shield ring, the support, and the electrode plate are provided.

Here, the resistance of the shield ring is preferably lower than the resistance of the electrode plate. For example, the resistance of the shield ring is set to 1 to 10 Ωcm, and the resistance of the electrode plate is set to 65 to 85 Ωcm. The shield ring and the electrode plate can be made of the same material. Silicon can be used as the material. The outer diameter of the electrode plate is preferably larger than the outer diameter of the first electrode. In addition, an electrode plate that has a cavity in the center of the electrode plate on the side of the support without providing a cavity in the support, and a plasma processing apparatus equipped with the electrode plate, or an electrode body and a support that does not have a cavity are used. It may be a plasma processing device provided.

According to the configuration, the distribution of plasma is made uniform by suppressing the electric field at the center from becoming strong, and the use of a sheath redling that is flush with the electrode surface results in a change over time. New and improved plasma processing equipment with few defects and capable of microfabrication Electrode plates, electrode supports, and shield rings can be provided.

In addition, a processing chamber, a first electrode on which the object to be processed can be placed in the processing chamber, a second electrode disposed opposite to the first electrode in the processing chamber, and a processing chamber capable of introducing a processing gas into the processing chamber. A gas supply system, an evacuation system capable of evacuating the processing chamber, and a high-frequency power applied to at least one of the first and second electrodes to convert the processing gas into plasma to a predetermined level with respect to the object to be processed. In a plasma processing apparatus provided with a high-frequency power supply system for performing plasma processing, the second electrode includes a support and an electrode plate forming a surface facing the object to be processed. The contact surface is provided with a plasma processing apparatus, a support, and an electrode plate on which an insulating coating is formed on at least one of them.

The thickness of the insulating film formed on the support or the electrode plate is preferably 50 μm or less, and more preferably 10 to 30. The support can be composed of aluminum, and the electrode plate can be composed of silicon. The insulating film on the aluminum surface can be a rare earth oxide or aluminum compound, and the insulating film on the silicon surface can be a silicon compound. According to the powerful structure, a durable plasma processing apparatus having electrodes that do not crack even when remounted and an electrode plate and an electrode support thereof are provided. BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 is a cross-sectional view showing a configuration of a plasma device 1 according to one embodiment of the present invention.

FIG. 2 is a cross-sectional view schematically showing the upper electrode 21 and the shield ring 55 according to the first embodiment.

Figure 3 is a cross-sectional view schematically showing the upper electrode and shield ring in a conventional plasma device.

Figure 4 is a diagram showing the etching rate in a conventional plasma apparatus using a sinor red ring 155.

Fig. 5 is a diagram showing the etching rate in a plasma apparatus using a seedling 55. Figure 6 is a schematic sectional view showing the area around the shield ring 255.

Fig. 7 is an enlarged view of part A in Fig. 6.

FIG. 8 is a schematic cross-sectional view showing the periphery of a conventional shield ring 1555.

Fig. 9 is an enlarged view of part B in Fig. 8.

Figure 10 is a graph showing the rate of decrease in etch rate due to changes over time.

FIG. 11 is a diagram showing a comparison of the etch rate change amount within the wafer surface.

Figure 12 is a diagram showing the change over time in pressure on the wafer.

FIG. 13 is a sectional view showing the upper electrode 22 1 and the shield ring 55. FIG. 14 is a cross-sectional view showing the configuration of the plasma device 100 according to the present embodiment.

FIG. 15 is a cross-sectional view schematically showing the upper electrode 3 21.

Figure 16 is a diagram schematically showing the upper electrode 421 in a conventional plasma device.

Figure 17 is a cross-sectional view schematically showing a state in which fusion has occurred after the conventional upper electrode 4 21 has been used for etching.

Fig. 18 is a diagram conceptually showing the fused electrode plate 423 removed from the electrode support 422.

FIG. 19 is a cross-sectional view showing the upper electrode 521. BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, preferred embodiments of a plasma processing apparatus, an electrode plate, an electrode support, and a sea / red ring according to the present embodiment will be described in detail with reference to the accompanying drawings.

(First Embodiment)

(1) Configuration of processing unit

FIG. 1 is a cross-sectional view illustrating a configuration of a plasma device 1 according to the present embodiment. The processing chamber 2 of the plasma apparatus 1 is formed as a cylindrical processing vessel made of, for example, aluminum that has been subjected to anodizing with alumite and grounded.

An insulating support plate 3 made of ceramic or the like is provided at the bottom of the processing chamber 2. Above the insulating support plate 3, a substantially columnar susceptor support 4 for mounting a substrate to be processed, for example, a semiconductor wafer W having a diameter of 8 inches, is provided. Further, a susceptor 5 constituting a lower electrode is provided on the susceptor support 4, and a high-pass filter (HPF) 6 is connected.

A heat exchange chamber 7 is provided inside the susceptor support 4, and a heat exchange medium circulates from the outside through a heat exchange medium introduction pipe 8 and a heat exchange medium discharge pipe 9, and the semiconductor wafer W is passed through the susceptor 5. It is configured so that it can be maintained at a predetermined temperature. The temperature is controlled automatically by a temperature sensor (not shown) and a temperature control mechanism (not shown).

On the susceptor 5, an electrostatic chuck 11 for holding the semiconductor wafer W by suction is provided. The electrostatic chuck 11 has a configuration in which, for example, a conductive thin-film electrode 12 is sandwiched between polyimide resins from above and below. When a voltage of 5 kV is applied to the electrode 12, the Coulomb force causes the wafer W to be attracted and held on the upper surface of the electrostatic chuck 11. Of course, instead of using such an electrostatic chuck, the peripheral edge of the wafer W may be pressed by a mechanical clamp to hold the wafer W on the susceptor 5.

Further, the insulating plate 3, the susceptor support 4, the susceptor 5, and the electrostatic chuck 11 are provided with a gas passage 14 for supplying, for example, He gas to the back surface of the semiconductor wafer W. The semiconductor wafer W is maintained at a predetermined temperature through the heat transfer medium such as He gas.

A substantially annular focus ring 15 is provided around the susceptor 5 so as to surround the electrostatic chuck 11. The focus ring 15 is made of, for example, a conductive silicon and has a function of effectively causing ions in the plasma to enter the semiconductor wafer W.

An upper electrode 21 is supported at an upper portion in the processing chamber 2 via an insulating member 25 and a shield ring 55. The upper electrode 21 has, for example, an electrode support 22 made of aluminum whose surface is anodized and an electrode plate 23 facing the susceptor 5 and the TO and having a large number of discharge holes 24. . Susceptor 5 and upper electrode 2 1 Means, for example, about 10 to 60 mm apart. Detailed configurations of the upper electrode 21 and the shield ring 55 will be described later.

The electrode support 22 is provided with a gas inlet 26 and is connected to a gas supply pipe 27. Further, it is connected to a processing gas supply source 30 via a valve 28 and a mass flow controller 29, and an etching gas and other processing gases are introduced into the processing chamber 2.

The process gas, for example, may be used a fluorocarbon gas (C _x F _y), such as Hyde port fluorosilicone carbon gas _{_{_{(C p H q F r)}}} , a gas containing a halogen element.

The lower part of the processing chamber 2 is connected to an exhaust pipe 31 leading to an exhaust device 35 such as a vacuum pump. The exhaust device 35 is equipped with a vacuum pump such as a turbo-molecular pump, and the inside of the processing chamber 2 can be evacuated to an arbitrary degree of reduced pressure, for example, from 10 mTorr to 1000 mTorr.

A gate valve 32 is provided on the side wall of the processing chamber 2 so that the semiconductor wafer W can be sent to an adjacent load lock chamber (not shown) while the gate valve 32 is open. I have.

Next, a high-frequency power supply system of the plasma device 1 will be described. First, power is supplied to the upper electrode 21 from the first high-frequency power supply 40 that outputs high-frequency power with a frequency of, for example, 27 to 150 MHz, via the matching box 41 and the feed rod 33. It has become. Also, a low-pass filter (LPF) 42 is connected to the upper electrode 21.

By applying a high frequency and a high frequency in this manner, a high-density plasma can be formed in the processing chamber 2 in a favorable, dissociated state, and plasma processing under low-pressure conditions becomes possible. In the present embodiment, the high-frequency power supply 40 of 6 MHZ is used. The power from the high-frequency power supply 50, which outputs high-frequency power with a frequency of, for example, about 800 KHz to 4 MHz, is supplied to the susceptor 5 serving as the lower electrode through the matching unit 51. I have. By applying a frequency in such a range, an appropriate ion action can be applied without damaging the semiconductor wafer W. (2) Configuration of upper electrode and shield ring

Next, the configurations of the upper electrode 21 and the shield ring 55 will be described in detail. FIG. 2 is a cross-sectional view schematically showing the upper electrode 21 and the shield ring 55. As shown in FIG. 2, a cavity 62 is provided at the center of the electrode support 22 provided above the electrode plate 23 so as to be in contact with the electrode plate 23. The cavity 62 is formed such that resonance occurs at the frequency of the high-frequency power supplied to the upper electrode 21 and an electric field orthogonal to the electrode plate 23 is generated in the gap, that is, the electrode plate 2 The thickness of the part where the high-frequency power is supplied from the surface of the electrode plate in 3, ie the skin differential expressed by the following equation (1). The dimension (diameter and thickness) is determined so as to be larger than the thickness δ force S and the thickness of the electrode plate 23.

Where ω: angular frequency of high-frequency power (= 2πf (f = frequency))),: specific resistance of electrode plate, μ: magnetic permeability of electrode plate

Thus, when resonance occurs in the cavity 62 and an electric field orthogonal to the electrode plate 23 is generated, the electric field of the cavity 62 and the electric field of the electrode plate 23 are combined, and the electric field of the cavity 62 becomes Thus, the electric field at the center of the electrode just below the cavity 62 in the electrode plate 23 can be controlled. Thus, a more uniform plasma distribution can be realized.

In addition, as shown in Fig. 3, the conventional shield ring 155 forms a gap shorter than the distance between the upper electrode and the semiconductor wafer to obtain the effect of plasma confinement. It was configured to protrude at a certain lower part. Also, it is usually made of quartz, and protrudes downward, so that it is easily cut by plasma.

For this reason, the shield ring 55 according to the present embodiment has the lower part flush with the electrode plate 23 as shown in FIG. The resistance value is set lower than the resistance value of the electrode plate 23, and may be the same material as the electrode plate 23. Silicon can be used as a material for the electrode plate 23 and the shield ring 55.

In consideration of the electric field distribution between the lower electrode and the upper electrode, the appropriate values of the resistance of the shield ring 55 and the electrode plate 23 are 1 to LOQ cm and 65 to 85 Q cm, respectively. FIG. 4 is a diagram showing an etching rate in a plasma device using the conventional shield ring 155, and FIG. 5 is a diagram showing an etching rate in a plasma device using the shield ring 55 according to the present embodiment.

Figures 4 and 5 show the average of the etching rates (nmZrn in.) Obtained by performing the same time treatment under the same conditions except for the material and structure of the shield ring from both centers of the semiconductor wafer. These are the results of measurements in two directions (X and Y directions) orthogonal to the distance (mm). Here, the shield ring 155 is made of quartz, and the sinored ring 555 is made of silicon with a resistance of about 2 Ω.

As shown in Figs. 4 and 5, when the conventional shield ring 155 is used, the etching rate clearly decreases when the distance from the center exceeds 100 mm. On the other hand, the high-frequency current flowing in the low-resistance shield ring 55 becomes larger than when a higher-resistance sinor red ring 155 is used, so that the plasma density in that part increases and the plasma density over the entire surface of the semiconductor wafer increases. It is possible to improve the uniformity of the film.

Furthermore, according to the material and composition of the conventional shield ring 155, it is considered that the protruding part is always exposed to the plasma, is shaved and changes with time, and does not exhibit the original plasma confinement effect. It is self-evident that this tendency becomes even more pronounced when processing is repeated several times.

Further, in the present embodiment, the electric field can be controlled by the cavity 62 above the electrode 23 provided in the support 22, and the plasma distribution can be kept sufficiently uniform. The same effect can be obtained even when the cavity 62 is provided in the electrode plate 22 3 as in the upper electrode 22 1 shown in FIG. Therefore, by using the shield ring 55 together, a more reliable plasma device 1 can be realized. Conversely, the use of the shield ring 55 ensures that the plasma distribution is sufficiently uniform, so that a similar effect can be obtained even when the cavity 62 is not provided in the upper electrode support 23. Can be In order to make the plasma distribution uniform, it is also useful to make the diameter of the electrode plate 23 larger than that of the susceptor 5, which is the lower electrode.

(Second embodiment) Next, a shield ring according to a second embodiment will be described. The plasma processing apparatus provided with the shield ring according to the second embodiment is substantially the same as the plasma processing apparatus 1, and a description thereof will be omitted.

FIG. 6 is a schematic sectional view showing the periphery of the shield ring 255 according to the present embodiment, FIG. 7 is an enlarged view of a portion A in FIG. 6, FIG. 8 is a schematic sectional view showing the periphery of the conventional shield ring 155, Fig. 9 is an enlarged view of part B in Fig. 8.

As shown in Figs. 8 and 9, the conventional shield ring 155 is, for example, when the distance between the wafer W and the electrode plate 23 of the upper electrode is 20 mm, for example, projects downward about 7 mm to generate a step, and the wafer W The distance from the surface was reduced to 13 mm.

However, if there is such a step, the surface of the shield ring 155 will be consumed and the gas pressure on the wafer W will decrease as the time of exposure to the plasma increases. As a result, the etching rate decreases and the removability of the contact hole changes. As shown in Figs. 6 and 7, shield ring

255 is flush with the electrode plate 23.

Fig. 10 shows the rate of decrease in etch rate due to aging, and Fig. 11 shows a comparison of the amount of change in etch rate within the wafer surface. In the plasma processing apparatus 1 according to the first embodiment, these are supplied by the upper electrode high-frequency power supply 40, 27,

This is the result of plasma processing performed by supplying 800 KHz power from a 12 MHz, high frequency power supply 50 for the lower electrode.

The electrode plate 23 is made of single-crystal silicon, the resistance is 1 to: L 0 Ω · cm, the shield ring 155 (conventional type), and the shield ring 255 (improved type) are both made of quartz and have insulating properties (up to 1016 Ω · cm). The other processing conditions used were optimized for each shield ring.

That is, for the conventional shield ring 155, the pressure is 40 mTorr, the upper electrode supply power / the lower electrode supply power = 2000/1400 W, the distance between the electrode plate 23 and the wafer W = 17 mm, and the processing gas flow rate C ₄ F ₈ , Ar Aθ ₂ = 21/510/1 1 sccm, wafer center backside cooling gas pressure Z Wafer edge backside cooling gas pressure = 10/35 To rr, lower electrode temperature Z upper electrode temperature Z processing chamber side wall temperature = 1/20 /

30/50 ° C. For the improved shield ring 255, the pressure was 50 mTorr, the upper electrode supply power Z the lower electrode supply power = 2000/1400 W, the distance between the electrode plate 23 and the wafer W = 17 mm, and the processing gas flow rate. ₄ 8/0 ₂ = 21/450/10 sc cm, wafer center backside cooling gas pressure / wafer edge backside cooling gas pressure = 12/25 To rr, lower electrode temperature Z upper electrode temperature Z processing chamber side wall temperature = 0/30 / It is 50 ° C.

In Fig. 10, the horizontal axis represents the plasma processing time, and the vertical axis represents the rate of change of the etching rate. The reduction in the etching rate after 100 hours of plasma processing was about 8% in the conventional step-type shield ring 155, but using the improved flat-type shield ring 255 without the step with the electrode plate 23, It was about 4%. '

In FIG. 11, the vertical axis represents the rate of change of the etching rate after 100 hours of plasma processing at the center, middle, and periphery of the wafer W surface. As described above, in the improved shield ring 255, the amount of change at the center and the middle of the wafer is almost zero, and at the periphery, about 1000 A / mi. , About 50 OA / min.

Next, the reason why the rate of change in the etching rate is reduced as described above will be described with reference to FIG. FIG. 12 is a diagram showing pressure aging on a wafer. Figs. 12 (a) and (b) show the initial state using the conventional shield ring 155 and after plasma treatment for 100 hours, respectively, and Figs. (C) and (d) show the improved shield ring 255, respectively. In the initial state and after 100 hours of plasma treatment. The horizontal axis represents the set pressure, and the vertical axis represents the difference between the set pressure and the pressure measured at each position (right, top, notch, center) on the wafer.

The wear of the shield ring was about 2 mm / 100 hours for both the conventional type and the improved type. However, in the conventional shield ring 155, the difference between the set pressure and the measured pressure fluctuates before and after the treatment. Also, the absolute value of the pressure difference is larger than that of the improved type.

This is thought to be because the step of the shield ring 155 caused pressure fluctuation. If the pressure difference varies depending on the location on the wafer, the contact horn There is a danger that the yieldability will not be uniform and the yield will deteriorate. In addition, it can be seen that the change with time in pressure causes a decrease in the etch rate and a change in the removability of the machined hole.

As described above in detail, according to the shield ring according to the second embodiment, the gas pressure on the wafer is made uniform, and the gas pressure on the wafer changes with time due to the consumption of the shield ring after plasma processing. High-performance film processing that enables finer processing by reducing the etching rate due to aging and reducing the etching rate due to aging, and improving the hole removability and uniformity within the wafer. Equipment can be provided. Of course, it can be used in a plasma processing apparatus together with the upper electrode 21 or 21 according to the first embodiment.

Further, for example, the shape of the shield ring is not limited to the example described in the present embodiment, and other shapes may be used as long as the upper electrode and the lower surface are substantially flush. Also, the case where a semiconductor wafer is used as a substrate to be processed and etching is performed on the substrate is shown. However, the target to be processed may be another substrate such as a liquid crystal display device substrate. Other processing such as C VD may be used.

(Third embodiment)

FIG. 14 is a cross-sectional view showing a configuration of a plasma device 100 according to the third embodiment of the present invention. The configuration of the plasma apparatus 100 is substantially the same as that of the plasma processing apparatus 1, and a description thereof will be omitted.

Next, the configuration of the upper electrode 3221 will be described in detail. FIG. 15 is a cross-sectional view schematically showing the upper electrode 321 according to the present embodiment. The upper electrode 3 21 has an electrode support 3 22, an electrode plate 3 2 3, an insulating film 3 62 and the like.

The electrode support 32 2 supports the electrode plate 3 23, transmits high-frequency power, and maintains a constant temperature distribution of the electrode plate 3 2 3 due to its high-level thermal conductivity and increases the temperature. It functions as a cooling material that prevents The electrode plate 322 is detachably fixed to the electrode support 322 by screws 360.

Conventionally, the electrode support and the electrode plate were configured to make direct contact in consideration of the etching rate and thermal diffusivity. In the present embodiment, the electrode support is used. A thin insulating film 362 is formed on at least one of the forces on the boundary surface between the support 3 and the electrode plate 3. When the electrode support 322 is made of aluminum and an insulating film 362 is provided on its surface, a rare earth oxide or an aluminum compound can be used as the material of the insulating film 362. The rare earth oxide, for example, Y ₂ 0 ₃ sprayed coating, the aluminum compound, for example, anodized aluminum coating, etc. A 1 ₂ O ₃ sprayed coating can be applied.

When the electrode plate 32 3 is made of silicon and an insulating film 36 2 is provided on the surface thereof, a silicon compound can be used as the material of the insulating film 36 2. The silicon compound is, for example, Si ₂ or Si ₃ N ₄ . This prevents direct contact between the anode of the electrode support 322 and the silicon of the electrode plate 322, so that fusion can be prevented. In addition, by setting the thickness of the insulating film 362 to, for example, 5 μm or less, a sufficient etching rate can be secured without obstructing high-frequency transmission and heat conduction. Further, the cavity 62 according to the first embodiment may be provided in the electrode plate, and the upper electrode 521 may be configured as shown in FIG. The cavity 62 may be provided on the electrode support side. In either case, the material of the electrode plate is prevented from fusing to the electrode support, and a uniform plasma can be formed, thus enabling higher quality plasma processing.

The preferred embodiments of the plasma processing apparatus according to the present invention, the electrode plate, the electrode support, and the shield ring have been described with reference to the accompanying drawings. However, the present invention is not limited to such an example. It is obvious that those skilled in the art can conceive various changes or modifications within the scope of the technical idea described in the claims. It is understood that it belongs to. For example, the insulating coating may be manufactured by other methods such as CVD and PVD. The material of the insulating film may be any other material as long as it has excellent insulation and corrosion resistance and can be made thin. Industrial applicability

According to the present invention, a processing gas is introduced into a vacuum processing vessel, the plasma is generated, and the plasma is generated. The present invention relates to a plasma processing apparatus that performs processing on a processing body, and an electrode plate, an electrode support, and a shield ring used therein, and is particularly applicable to a manufacturing process of a semiconductor device, a substrate for a liquid crystal display device, and the like.

Claims

The scope of the claims

(1) a processing chamber; a first electrode on which an object to be processed can be placed in the processing chamber; a second electrode opposed to the first electrode in the processing chamber; and a processing gas in the processing chamber. A process gas supply system capable of being introduced; an exhaust system capable of evacuating the process chamber; and a high-frequency power applied to at least one of the first and second electrodes to convert the process gas into plasma to convert the process gas into plasma. And a high-frequency power supply system for performing a predetermined plasma processing on the processing object.

The second electrode includes an electrode plate formed of a conductor or a semiconductor provided so as to face the first electrode, and an electrode provided on a surface of the electrode plate opposite to the processing chamber. A conductive support for supporting the plate, and a cavity provided at the center of the support;

A plasma processing apparatus, wherein a shield ring having substantially the same surface as the electrode plate is disposed around the second electrode in the processing chamber.

(2) The plasma processing apparatus according to claim 1, wherein a resistance value of the shield ring is lower than a resistance value of the electrode plate.

(3) The plasma processing apparatus according to claim 2, wherein the shield ring and the electrode plate are made of the same material.

(4) The plasma processing apparatus according to claim 3, wherein the shield ring and the electrode plate are made of silicon.

(5) The plasma processing apparatus according to claim 1, wherein an outer diameter of the electrode plate is larger than an outer diameter of the first electrode.

(6) a processing chamber; a first electrode on which an object to be processed can be placed in the processing chamber; a second electrode disposed to face the first electrode in the processing chamber; A processing gas supply system capable of introducing a processing gas into the processing chamber; an exhaust system capable of evacuating the processing chamber; and applying a high-frequency power to at least one of the first and second electrodes. And a high-frequency power supply system for performing a predetermined plasma process on the object to be processed into a plasma, and a shield ring used for a plasma processing apparatus comprising: A shield ring provided around the second electrode inside the processing chamber, and having substantially the same surface as the surface of the second electrode facing the object to be processed.

(7) The shield ring according to claim 6, wherein the shield ring is made of silicon.

(8) The shield ring according to claim 6, wherein the resistance value of the shield ring is 1 to: L O Q cm.

(9) a processing chamber; a first electrode on which an object to be processed can be placed in the processing chamber; a second electrode opposed to the first electrode in the processing chamber; A processing gas supply system capable of introducing a processing gas; an exhaust system capable of evacuating the processing chamber; and applying a high-frequency power to at least one of the first and second electrodes and the processing gas. And a high-frequency power supply system for subjecting the object to be treated to a predetermined plasma treatment.

The semiconductor device includes a hollow portion provided opposite to the first electrode and formed of a conductor or a semiconductor, and provided at a central portion of a surface opposite to the processing chamber. An electrode plate characterized in that:

(10) The electrode plate according to claim 9, wherein the electrode plate is made of silicon.

(11) The electrode according to claim 9, wherein the resistance value of the electrode plate is 65 to 85 Ωcm.

(12) a processing chamber; a first electrode on which an object to be processed can be placed in the processing chamber; a second electrode disposed opposite to the first electrode in the processing chamber; and a processing gas in the processing chamber. A processing gas supply system capable of being introduced; an exhaust system capable of evacuating the processing chamber; and applying a high-frequency power to at least one of the first and second electrodes to plasma-treat the processing gas and convert the processing object into a plasma. And a high-frequency power supply system for performing a predetermined plasma treatment on the plasma processing apparatus.

The second electrode is formed together with an electrode plate made of a conductor or a semiconductor provided so as to face the first electrode, and the second electrode is formed on a surface of the electrode plate opposite to the processing chamber. A support that is provided, has a hollow portion in the center, and is conductive.

(13) a processing chamber; a first electrode which can be placed in the processing chamber to place the object to be processed; a second electrode which is placed in the processing chamber so as to face the first electrode; A process gas supply system capable of introducing a process gas into a chamber; an exhaust system capable of evacuating the process chamber; applying a high-frequency power to at least one of the first and second electrodes to convert the process gas into a plasma; A high-frequency power supply system for performing predetermined plasma processing on the object to be processed; and a plasma processing apparatus having the above:

The second electrode includes an electrode plate formed of a conductor or a semiconductor provided so as to face the first electrode, and an electrode plate provided on a surface of the electrode plate opposite to the processing chamber. And a conductive support for supporting;

A shield ring having substantially the same surface as the electrode plate is disposed around the second electrode inside the processing chamber, and a resistance value of the shield ring is lower than a resistance value of the electrode plate. Yes, a plasma processing device.

(14) The plasma processing apparatus according to (13), wherein the shield ring and the electrode plate are made of the same material.

(15) The plasma processing apparatus according to (14), wherein the shield ring and the electrode plate are made of silicon.

(16) The plasma processing apparatus according to claim 13, wherein a resistance value of the shield ring is 1 to 10 Ωcm.

(17) The plasma processing apparatus according to claim 13, wherein a resistance value of the electrode plate is 65 to 85 Qcm.

(18) The plasma processing apparatus according to claim 13, wherein an outer diameter of the electrode plate is larger than an outer diameter of the first electrode.

(19) a processing chamber; a first electrode on which an object to be processed can be placed in the processing chamber; a second electrode disposed in the processing chamber so as to face the first electrode; and processing in the processing chamber. A processing gas supply system capable of introducing a gas; an exhaust system capable of evacuating the processing chamber; a high-frequency power applied to at least one of the first and second electrodes to generate a plasma of the processing gas. And a high-frequency power supply combining system for subjecting the object to be processed to a predetermined plasma process. The second electrode includes: a support; and an electrode plate forming a surface facing the object to be processed.

A plasma treatment apparatus, wherein an insulating coating is formed on at least one of the contact surfaces between the support and the electrode plate.

(20) The plasma processing apparatus according to claim 19, wherein the thickness of the insulating film is not more than 5 Ozm.

(21) The plasma processing apparatus according to claim 19, wherein the support is made of aluminum, and the electrode plate is made of silicon carbide.

(22) The plasma processing apparatus according to claim 21, wherein the insulating film is formed on a surface of the aluminum.

(23) The plasma processing apparatus according to claim 21, wherein the insulating film is formed on a surface of the silicon.

(24) a processing chamber; a first electrode on which an object to be processed can be placed in the processing chamber; a second electrode disposed to face the first electrode in the processing chamber; A processing gas supply system capable of introducing a processing gas into the processing chamber; an exhaust system capable of evacuating the processing chamber to a vacuum; And a high-frequency power supply system for performing a predetermined plasma process on the object to be processed. A support comprising a second electrode, wherein an insulating coating is formed on a contact surface with the electrode plate. (25) The support according to claim 24, wherein the support is made of aluminum.

(26) The support according to claim 25, wherein the insulating film on the aluminum surface is made of a rare earth oxide or an anolemminium compound.

(27) a processing chamber; a first electrode on which an object to be processed can be placed in the processing chamber; a second electrode disposed to face the first electrode in the processing chamber; A processing gas supply system capable of introducing a processing gas; an exhaust system capable of evacuating the processing chamber; a high-frequency power applied to at least one of the first and second electrodes to convert the processing gas into plasma. A predetermined plasma process is performed on the object to be processed. An electrode plate for use in a plasma processing apparatus, comprising: a high-frequency power supply system;

An electrode plate having a surface facing the object to be processed and an insulating film formed on a surface in contact with the support.

(28) The claim 27, wherein the disgusting electrode plate is made of silicon.

(29) The plasma processing apparatus according to claim 28, wherein the insulating film on the silicon surface is a silicon compound.