WO2002023576A1 - Reseau de photocathodes a emission de champ comportant une couche supplementaire ameliorant le rendement et systeme d'imagerie optronique l'utilisant - Google Patents

Reseau de photocathodes a emission de champ comportant une couche supplementaire ameliorant le rendement et systeme d'imagerie optronique l'utilisant Download PDF

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Publication number
WO2002023576A1
WO2002023576A1 PCT/NL2000/000658 NL0000658W WO0223576A1 WO 2002023576 A1 WO2002023576 A1 WO 2002023576A1 NL 0000658 W NL0000658 W NL 0000658W WO 0223576 A1 WO0223576 A1 WO 0223576A1
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WO
WIPO (PCT)
Prior art keywords
electron source
electron
light
layer
source according
Prior art date
Application number
PCT/NL2000/000658
Other languages
English (en)
Inventor
Marco Jan-Jaco Wieland
Bert Jan Kampherbeek
Pieter Kruit
Original Assignee
Mapper Lithography Ip B.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mapper Lithography Ip B.V. filed Critical Mapper Lithography Ip B.V.
Priority to AU2000276924A priority Critical patent/AU2000276924A1/en
Priority to PCT/NL2000/000658 priority patent/WO2002023576A1/fr
Publication of WO2002023576A1 publication Critical patent/WO2002023576A1/fr
Priority to US10/392,228 priority patent/US20030178583A1/en

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70375—Multiphoton lithography or multiphoton photopolymerization; Imaging systems comprising means for converting one type of radiation into another type of radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/34—Photo-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3175—Projection methods, i.e. transfer substantially complete pattern to substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/317—Cold cathodes combined with other synergetic effects, e.g. secondary, photo- or thermal emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H01J2237/06325—Cold-cathode sources
    • H01J2237/06333—Photo emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31777—Lithography by projection
    • H01J2237/31779—Lithography by projection from patterned photocathode

Definitions

  • the invention relates to an electron source provided with a substrate layer and a converter layer, the substrate layer being suitable for receiving light of a first wavelength and transmitting said light to said converter layer that is suitable to convert said light into electrons by a photo-electric effect.
  • the invention also relates to an electron optical system provided with such an 10 electron source.
  • Electron sources are used in a wide variety of electron optical imaging systems, like electron microscopes and lithography systems. 15 Field emission arrays as defined in the preamble of claim 1 are disclosed by
  • Schroder e.a. "The semiconductor field-emission photocathode", IEEE Transactions on Electron Devices, Vol. ED-21, No. 12, December 1974. Schroder discloses their use in image tubes.
  • One of the problems of the prior art arrangements is the yield. It is therefore an object of the present invention to provide a field emitter photocathode array for a 25 lithography system that has an enhanced yield.
  • the invention as defined at the outset is characterized in that the substrate layer is provided with a fluorescent layer to convert the light of the first wavelength into light with a second wavelength larger than the first wavelength.
  • the second wavelength is tuned to the converter layer such that photons having 30 the second wavelength have a longer free path length in the converter layer than those having the first wavelength. Thereby, the efficiency of electron generation in the converter layer will be increased.
  • second wavelength is not meant in a strict sense of there being present only one single second wavelength.
  • the fluorescent layer will normally produce photons of different wavelengths, as is known to persons skilled in the art.
  • the invention also relates to an electron optical system provided with an elec- tron source as defined above.
  • Figure 1 shows schematically a lithography system according to the prior art in which the field emitter photocathode array can be used;
  • Figure 2 shows an example of a scanning direction of pixels on a wafer to be lithographed
  • Figure 3 shows a Scanning Electron Microscope image of a p-type silicon wafer with an array of tips;
  • Figure 4 shows schematically the operation of a semiconductor field emission array as shown in Figure 3 in a MAPPER setup
  • Figure 5 shows a band energy scheme of a semiconductor field emission array as shown in Figure 3;
  • Figure 6 shows the current on a logarithmic scale flowing from a tip of a semiconductor field emission array as shown in Figure 3, as function of the inverse voltage across the tip.
  • FIGS 7 and 8 show embodiments of the converter plate in accordance with the invention.
  • each 0.4 ⁇ m "pixel" of a mask is focused to a spot of 0.13 ⁇ m. Since the distance between pixels at the waver must be 0.1 ⁇ m, there is a mixing of i iformation between neighbouring pixels because the spots of 0.13 ⁇ m overlap each other. If we could sharpen up this 0.13 ⁇ m spot, this machine would be ready for the 0.1 generation. The sharpening up, or enhancement of resolution, cannot be done after the mixing of information has occurred. According to one embodiment described in WO98/54620 only one pixel of the mask is illuminated. Then there is only an isolated spot of 0.13 ⁇ m at an imaginary wafer plane.
  • a converter element for example in the form of a photocathode of size 0.1 ⁇ m, or a photocathode with a metallic aperture of diameter of 0.1 ⁇ m on top, is positioned.
  • a photocathode provides an electron source that may have a diameter of 0.1 ⁇ m.
  • the photocathode that is obtained in this way is imaged with magnification factor 1 onto the wafer in a real wafer plane spaced from the photocathode. This can be done either with acceleration inside a magnetic field or with a small accelerating electrostatic lens.
  • the mask pattern is transferred to the wafer with the required resolution.
  • a multiple beamlet embodiment can also be used.
  • the distance between separate beams at the wafer surface needs only to be as much as the point spread function.
  • the fabrication technology of the photocathode/lens array will determine the minimum distance.
  • the number of beams is estimated to be in the order of 10 6 -10 8 .
  • a light source (not shown) produces a light beam 13, preferably in deep UN.
  • the light beam 13 impinges on a micro lens array 1 having lenses 2.
  • the light beam 13 is as it were divided in beamlets 12, of which only one is shown for the sake of clarity. However, in practice there may as much as 10 6 - 10 8 beamlets 12.
  • the lens 2 focuses the beamlet 12 on a mask 3 with spots of, e.g., 400 nm diameter.
  • Each light beamlet 12 leaving the mask 3 passes a demagnifier 14, which is schematically indicated by lenses 4 and 5 and an aperture 6.
  • demagnifier 14 By the demagnifier 14 the beamlets 12 are focused on a converter plate 7 having converter elements 8 of which only one is indicated.
  • the converter plate 7 is constituted by a photocathode having a plurality of apertures a plurality of electron beamlets 15 (only 1 being shown in Figure 1) is generated.
  • the electron beamlet 15 originates from the aperture and passes through focusing means, indicated schematically by a lens 9. Finally, the electron beamlet 15 impinges on the wafer 10 in wafer plane 11.
  • the mask 3 may be moved in the direction of arrow PI and the wafer in the direction of arrow P2. If the mask 3 is, e.g., moved 0.4 ⁇ m the wafer must be shifted 0.1 ⁇ m. Pixels could be arranged at random on the wafer 10. In an embodiment shown in Figure 2, the wafer pixels are arranged in lines and columns and the scanning direction SCAN differs from the direction of the lines of pixels.
  • the resolution is enhanced by sharpening up pixel by pixel, using a photocathode with very many apertures.
  • This known technology is called “Multiple Aperture Pixel by Pixel Enhancement of Resolution” or “MAPPER” technology. It can be thought of as traditional projection lithography in which the mask information is split up and transferred to the wafer sequentially. It can also be thought of as multiple micro- column lithography in which the electron sources are blanked by the mask.
  • the converter plate 7 according to the invention can be used in a system shown in Figure 1, however, in principal, it can be used in any electron optical imaging sys- tern.
  • the semiconductor field emission array 7 may, e.g., be illuminated by a single light beam 13. Then, no mask 3 and demagnifier 14 are used. By illuminating the entire field emission array 7, all tips 19 will generate electrons simultaneously. By means of alignment deflectors, each electron beam can be accurately positioned through a small blanking aperture on the object 10 to be processed. Blanking electrodes may be used to turn the individual electron beams on and off at the vicinity of the object 10 in order to write a desired pattern on the object surface.
  • An example of such a multi-beam direct write electron beam lithography system in which the semiconductor field emission array 7 could be used is described in: Dot matrix electron beam lithography, T.H. Newman, R.F.W. Pease and W. DeNore, J. Vac Sci. Technol. Bl, 999 (1983).
  • the light beamlets 12 may be modulated by elec- tronically modulating the source(s) that produce them.
  • the converter plate 7 comprises preferably a semiconductor field emission array as shown in Figure 3.
  • other converters plates of other material may be used instead.
  • Figure 3 shows a plurality of tips on a p-doped silicon substrate.
  • the image has been made by means of a Scanning Electron Microscope (SEM).
  • SEM Scanning Electron Microscope
  • the silicon wafer was sized 5 mm x 5 mm.
  • 81 x 81 tips were etched on the wafer surface.
  • the tips shown were spaced about 8 ⁇ m whereas their height was about 4 ⁇ m.
  • the tips may be located closer to one another than 8 ⁇ m.
  • the front surface from the tips, from which the electrons leave the silicon have a diameter of preferably less than 100 nm, even more preferably less than 50 nm.
  • Figure 3 shows conically shaped tips.
  • the tips may have a rectangle or other shaped cross section, or be shaped like a sphere.
  • ⁇ field emission is limited by the availability of electrons in the operating regime
  • ⁇ electrons are excited from the valence band in the conduction band by photons from the impinging beamlets 12;
  • FIG 4 shows the operation of the semiconductor field emission array 7 in more detail.
  • the array 7 comprises a supporting substrate 17.
  • this substrate 17 is designed such that the yield of the converter ele- ment 7 is enhanced. This will be further explained with reference to Figure 5 and 6, hereinafter.
  • a semiconductor field emission array layer 16 may be provided, preferably made of p-doped silicon.
  • the structure shown in Figure 4 is used in the transmissive mode, i.e., light beamlet 12 impinges on the supporting substrate 17.
  • the material used for the supporting substrate must be transparent to the wavelength of the light used.
  • the photons from the light travel through the supporting substrate 17 and reach the semiconductor layer 16 where they will generate electrons.
  • the electrons leave the silicon layer 16 substantially at the front surface of the tips 19.
  • An external (constant) electrical and magnetic field 18 accelerate the electrons and focus them on the wafer 10 to be processed.
  • the electrical and magnetic fields are preferably directed in parallel from the silicon layer 16 towards the wafer 10 to be processed.
  • the generated electrons may be accelerated and focussed by other means, as is known to persons skilled in the art.
  • Figure 5 shows the energy bands of the silicon layer 16.
  • the vertical axis shows the energy and the horizontal axis shows the position within the silicon layer 16.
  • ⁇ Ey energy of the valence band
  • ⁇ Ep energy of the Fermi level, which is between E c and Ey.
  • the vertical line at the right hand side of the energy bands corresponds to the boundary of the tip 19 at the interface with the external vacuum.
  • the most right bevelled line corresponds to the external electrical field. Its inclination is determined by the strength of the external electrical field.
  • the conversion material When the conversion material is made from a semiconductor there are few electrons in the conduction band E c . By illuminating the semiconductor with light a photoelectric effect occurs within the semiconductor material. A photon excites an electron from the valence band E v to the conduction band E c .
  • FIG. 5 shows that the energy bands are curved at the outside surface of the tips 19. This is caused by the external electrical field that penetrates the semiconductor material.
  • the curved energy bands cause electrons, indicated with “e”, in the conduction band E c to be accelerated towards the interface of tips 19 and the external vacuum. During their acceleration within the semiconductor material, these electrons may excite further electrons from the valence band to the conduction band. On the other hand, some of the electrons will fall back to the valence band. Including this latter effect, still an efficiency of 1 for the conversion of electrons per photon may be obtained.
  • holes, indicated with "h”, left behind in the valence band Ey are accelerated in the opposite direction.
  • the electrical current thus generated by the impinging photons is mainly determined by the availability of electrons in the conduction band E c and less by the external electrical field strength.
  • Figure 6 shows the electrical current generated by the impinging photons on a logarithmic scale as a function of the voltage across the tips 19.
  • the voltage is shown on an inverse scale, i.e., the voltage increases going from right to left.
  • Figure 6 shows that, starting at the right hand side of the curve, when the voltage increases above a certain first threshold the log current starts to deviate from a straight line and smooths to a more or less constant level. When the voltage increases further above a second threshold the log current increases sharply and returns to the original straight line.
  • the actual log current strength depends on, for instance, temperature and the amount of light in the beamlets 12. Therefore, in this region the current strength can be controlled by the impinging light. This effect is discussed in detail in the article of Schroder e.a. referred to above.
  • light is used having a wavelength of 400 nm or less, e.g., 193 nm, since that allows masks 3 with very small pixels to be used and imaged on the object 10 to be processed.
  • the substrate 17 of the converter plate 7 comprises two sublayers 17(1), 17(2).
  • Sublayer 17(1) is made of quartz and suitable to be transmissive for light with wavelengths in the UN range. Preferably, it is transparent to wavelengths of 400 nm or less, e.g., 248 nm. For still lower ⁇ 's CaF 2 or BaF lenses may be used instead of quartz.
  • the sublayer 17(1) is indicated to be 500 ⁇ m thick, however, any other suitable thickness may be applied.
  • the sublayer 17(2) is made of a suitable fluorescent material selected to receive light in the UN range and to convert the received UN photons into photons with larger wavelengths and thus less energy, for instance in the Infra Red range. A portion of these photons with larger wavelength will travel to the photocathode array 16 and will be less absorbed by the photocathode array material than the UN photons of the im- pinging light beamlets 12. Still, they will have enough energy to generate electrons within the photocathode array 16 by the photo-electric effect, as explained above.
  • the photocathode array 16 may be made of a semiconductor material provided with tips 19, as shown in Figure 7 and 8. However, any other suitable material may be applied.
  • the semiconductor material is silicon electrons may be generated by photons having a wavelength of up to 1.1 ⁇ m, whereas for germanium photons with a wavelength of up to 1.6 ⁇ m may be used (cf. Schroder, referred to above).
  • the fluorescent material may be selected such that the generated photons with larger wavelength are in a range for an optimum photo-electric effect in the photo- cathode array 16. For instance, for p-doped (111) silicon, 10 ⁇ .cm, an optimum range for those latter photons may be 0.5 to 1.0 ⁇ m (cf. Schroder, Fig. 17).
  • the fluorescent layer 17(2) is indicated to have a thickness of 1-5 ⁇ m, however, if desired another thickness may be chosen.
  • the thickness of the photocathode array 16 may be 20-30 ⁇ m, however, again this is just an example.
  • Figure 8 shows an alternative embodiment in which the fluorescent sublayer
  • the sublayer 17(1) may be made of quartz, however, when the fluorescent sublayer 17(2) produces photons with wavelengths larger than those of UN light other materials can be used.
  • sublayer 17(1) may comprise glass fibres to avoid scattering of light produced by fluorescent layer 17(2).

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)

Abstract

L'invention concerne une source électronique pourvue d'une couche de substrat (17) et d'une couche de semiconducteur (16) présentant au moins une pointe (19). La couche de substrat (17) est appropriée pour recevoir une lumière d'une première longueur d'onde et de la transmettre à la couche de semiconducteur (16) qui, elle, permet de transformer la lumière en électrons par effet photoélectrique. La couche de substrat (17) est pourvue d'une couche fluorescente (17(2)) qui permet de convertir la lumière de première longueur d'onde en lumière de seconde longueur d'onde plus importante que la première.
PCT/NL2000/000658 2000-09-18 2000-09-18 Reseau de photocathodes a emission de champ comportant une couche supplementaire ameliorant le rendement et systeme d'imagerie optronique l'utilisant WO2002023576A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
AU2000276924A AU2000276924A1 (en) 2000-09-18 2000-09-18 Field emission photocathode array comprising an additional layer to improve the yield and electron optical imaging system using the same
PCT/NL2000/000658 WO2002023576A1 (fr) 2000-09-18 2000-09-18 Reseau de photocathodes a emission de champ comportant une couche supplementaire ameliorant le rendement et systeme d'imagerie optronique l'utilisant
US10/392,228 US20030178583A1 (en) 2000-09-18 2003-03-18 Field emission photo-cathode array for lithography system and lithography system provided with such an array

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/NL2000/000658 WO2002023576A1 (fr) 2000-09-18 2000-09-18 Reseau de photocathodes a emission de champ comportant une couche supplementaire ameliorant le rendement et systeme d'imagerie optronique l'utilisant

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10/392,228 Continuation-In-Part US20030178583A1 (en) 2000-09-18 2003-03-18 Field emission photo-cathode array for lithography system and lithography system provided with such an array

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6661759B1 (en) 1999-06-18 2003-12-09 Samsung Electronics Co., Ltd. Adaptive recording method and apparatus for high-density optical recording, and control method therefor
EP1398781A2 (fr) * 2002-08-30 2004-03-17 Hewlett-Packard Development Company, L.P. Stockage d'informations utilisant la luminescence
WO2009113063A2 (fr) * 2008-03-10 2009-09-17 Yeda Research & Development Company Ltd. N Procédé de fabrication de surfaces formées en motif d’échelle nanométrique
CN114883163A (zh) * 2022-07-05 2022-08-09 北京大学 兼具高量子效率与低本征发射度的透射式半导体光阴极及方法

Citations (5)

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Publication number Priority date Publication date Assignee Title
US2603757A (en) * 1948-11-05 1952-07-15 Sheldon Edward Emanuel Photocathode
US3549229A (en) * 1967-09-21 1970-12-22 Zenith Radio Corp Method of assembling an image intensifier
GB2214382A (en) * 1987-12-23 1989-08-31 Third Generation Technology Li Infra-red image detector systems
JPH1040851A (ja) * 1996-07-22 1998-02-13 Nikon Corp 電子ビーム露光装置
EP0881542A1 (fr) * 1997-05-26 1998-12-02 Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno Système de lithographie

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2603757A (en) * 1948-11-05 1952-07-15 Sheldon Edward Emanuel Photocathode
US3549229A (en) * 1967-09-21 1970-12-22 Zenith Radio Corp Method of assembling an image intensifier
GB2214382A (en) * 1987-12-23 1989-08-31 Third Generation Technology Li Infra-red image detector systems
JPH1040851A (ja) * 1996-07-22 1998-02-13 Nikon Corp 電子ビーム露光装置
EP0881542A1 (fr) * 1997-05-26 1998-12-02 Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno Système de lithographie

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Title
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 06 30 April 1998 (1998-04-30) *
SCHRODER D K ET AL: "THE SEMICONDUCTOR FIELD-EMISSION PHOTOCATHODE", IEEE TRANSACTIONS ON ELECTRON DEVICES,IEEE INC. NEW YORK,US, vol. 21, no. 12, December 1974 (1974-12-01), pages 785 - 798, XP000960813, ISSN: 0018-9383 *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6661759B1 (en) 1999-06-18 2003-12-09 Samsung Electronics Co., Ltd. Adaptive recording method and apparatus for high-density optical recording, and control method therefor
EP1398781A2 (fr) * 2002-08-30 2004-03-17 Hewlett-Packard Development Company, L.P. Stockage d'informations utilisant la luminescence
EP1398781A3 (fr) * 2002-08-30 2005-11-09 Hewlett-Packard Development Company, L.P. Stockage d'informations utilisant la luminescence
WO2009113063A2 (fr) * 2008-03-10 2009-09-17 Yeda Research & Development Company Ltd. N Procédé de fabrication de surfaces formées en motif d’échelle nanométrique
WO2009113063A3 (fr) * 2008-03-10 2010-08-19 Yeda Research & Development Company Ltd. N Procédé de fabrication de surfaces formées en motif d’échelle nanométrique
US8288945B2 (en) 2008-03-10 2012-10-16 Yeda Research And Development Company Ltd Method for fabricating nano-scale patterned surfaces
CN114883163A (zh) * 2022-07-05 2022-08-09 北京大学 兼具高量子效率与低本征发射度的透射式半导体光阴极及方法

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