AU2000276924A1 - Field emission photocathode array comprising an additional layer to improve the yield and electron optical imaging system using the same - Google Patents

Field emission photocathode array comprising an additional layer to improve the yield and electron optical imaging system using the same

Info

Publication number
AU2000276924A1
AU2000276924A1 AU2000276924A AU7692400A AU2000276924A1 AU 2000276924 A1 AU2000276924 A1 AU 2000276924A1 AU 2000276924 A AU2000276924 A AU 2000276924A AU 7692400 A AU7692400 A AU 7692400A AU 2000276924 A1 AU2000276924 A1 AU 2000276924A1
Authority
AU
Australia
Prior art keywords
yield
improve
imaging system
same
optical imaging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2000276924A
Inventor
Bert Jan Kampherbeek
Pieter Kruit
Marco Jan-Jaco Wieland
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mapper Lithopraphy IP BV
Original Assignee
Mapper Lithopraphy IP BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mapper Lithopraphy IP BV filed Critical Mapper Lithopraphy IP BV
Publication of AU2000276924A1 publication Critical patent/AU2000276924A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70375—Multiphoton lithography or multiphoton photopolymerization; Imaging systems comprising means for converting one type of radiation into another type of radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/34—Photo-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3175—Projection methods, i.e. transfer substantially complete pattern to substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/317—Cold cathodes combined with other synergetic effects, e.g. secondary, photo- or thermal emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H01J2237/06325—Cold-cathode sources
    • H01J2237/06333—Photo emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31777—Lithography by projection
    • H01J2237/31779—Lithography by projection from patterned photocathode
AU2000276924A 2000-09-18 2000-09-18 Field emission photocathode array comprising an additional layer to improve the yield and electron optical imaging system using the same Abandoned AU2000276924A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/NL2000/000658 WO2002023576A1 (en) 2000-09-18 2000-09-18 Field emission photocathode array comprising an additional layer to improve the yield and electron optical imaging system using the same

Publications (1)

Publication Number Publication Date
AU2000276924A1 true AU2000276924A1 (en) 2002-03-26

Family

ID=19760706

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2000276924A Abandoned AU2000276924A1 (en) 2000-09-18 2000-09-18 Field emission photocathode array comprising an additional layer to improve the yield and electron optical imaging system using the same

Country Status (2)

Country Link
AU (1) AU2000276924A1 (en)
WO (1) WO2002023576A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100322601B1 (en) 1999-06-18 2002-03-18 윤종용 Recording method for optical disk recording, control method for optical disk recording apparatus, and recording apparatus of optical disk
US6980507B2 (en) * 2002-08-30 2005-12-27 Hewlett-Packard Development Company, L.P. Luminescence-phase change based data storage
EP2252545A2 (en) * 2008-03-10 2010-11-24 Yeda Research And Development Company Ltd. Method for fabricating nano-scale patterned surfaces
CN114883163B (en) * 2022-07-05 2022-09-27 北京大学 Transmission type semiconductor photocathode with high quantum efficiency and low intrinsic emittance and method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE23802E (en) * 1948-11-05 1954-03-16 Photocathode
US3549229A (en) * 1967-09-21 1970-12-22 Zenith Radio Corp Method of assembling an image intensifier
GB8729961D0 (en) * 1987-12-23 1988-04-27 Third Generation Technology Lt Photodetector systems
JPH1040851A (en) * 1996-07-22 1998-02-13 Nikon Corp Electron beam exposing device
EP0881542A1 (en) * 1997-05-26 1998-12-02 Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno Lithography system

Also Published As

Publication number Publication date
WO2002023576A1 (en) 2002-03-21

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