WO2002017477A2 - Mixer with image reject filter - Google Patents
Mixer with image reject filter Download PDFInfo
- Publication number
- WO2002017477A2 WO2002017477A2 PCT/CA2001/001214 CA0101214W WO0217477A2 WO 2002017477 A2 WO2002017477 A2 WO 2002017477A2 CA 0101214 W CA0101214 W CA 0101214W WO 0217477 A2 WO0217477 A2 WO 0217477A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- terminal
- integrated circuit
- conducting terminal
- driving amplifier
- circuit according
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
- H03H11/04—Frequency selective two-port networks
- H03H11/12—Frequency selective two-port networks using amplifiers with feedback
- H03H11/1213—Frequency selective two-port networks using amplifiers with feedback using transistor amplifiers
Definitions
- This invention relates to noise suppression in communications systems and, more particularly, to the suppression of image noise in superheterodyne communications receivers using an on-chip image rejection filter.
- Superheterodyne receivers continue to be used as the basic architectural element in mobile communications systems.
- a superheterodyne receiver front-end typically consists of a low-noise amplifier (LNA) , an image reject filter, a mixer, and a VCO as shown in Figure 1.
- LNA low-noise amplifier
- An LNA with very low noise figure is typically required to enable the receiver to detect very weak signals. Additionally, the LNA must provide sufficient gain to suppress the noise generated by the stages that follow it.
- the mixer allows for downconversion or the translation of the desired signal from the radio frequency (RF) to an intermediate frequency (IF) for further processing by the receiver backend.
- RF radio frequency
- IF intermediate frequency
- a well-known occurrence in superheterodyne receivers is that the front-end low-noise amplifier (LNA) may generate thermal noise at an image frequency (located a distance of two IFs away from the desired radio frequency, and that during downconversion, the image noise will fold over onto the thermal noise at the desired receiver frequency.
- LNA low-noise amplifier
- some other signal broadcasted at the image frequency may be received by the antenna and amplified by the LNA along with the desired signal.
- some form of image noise rejection is required prior to downconversion to suppress the unwanted image signals.
- ⁇ off-chip passive filters such as surface acoustic wave (SAW) filters or ceramic filters are often used for image rejection.
- SAW surface acoustic wave
- Off-chip filters also represent a significant fraction of the overall cost of the receiver front-end. However, if effort is expended to integrate the filter monolithically, then the signal will never have to leave the chip before reaching the IF stage in the receiver chain. In this way, a simpler cheaper package may be used and the costly off-chip filter can be eliminated.
- the present invention discloses a novel topology for integrating an image reject filter with a traditional LNA for use in the front-end of a superheterodyne receiver.
- the conventional topology for an LNA is modified by replacing the degeneration inductor with a resonator to provide a notching action in the frequency response of the LNA at the unwanted image frequency component.
- the LC resonator is centered at the image frequency and presents a high impedance to the emitter of the driving amplifier so as to cause the driving amplifier to have a substantially low gain at the image frequency.
- a multi-terminal circuit element having a first conducting terminal for providing an output signal, a second conducting terminal connected to an inductive degeneration element and a control terminal for receiving an input signal is AC coupled via its second conducting terminal to a filtering network.
- the filtering network is adjusted to provide a substantially high impedance to the second conducting terminal of the multi- terminal circuit element at the image frequency of the input signal so as to cause an unwanted image frequency component to be substantially eliminated in the output signal of the multi- terminal circuit element.
- the topology of the present invention requires minimal additional circuitry to perform the filtering function, uses only minimal additional current and does not suffer from the same performance limitations as currently used topologies.
- Figure 1 is a block diagram of the front-end of a superheterodyne receiver.
- FIG. 2 illustrates a conventional cascode low-noise amplifier (LNA) .
- FIG. 3 depicts a modified low-noise amplifier (LNA) topology that offers monolithic image rejection according to the present invention.
- LNA low-noise amplifier
- FIG. 4 illustrates a modified low-noise amplifier (LNA) circuit providing monolithic image rejection according to one embodiment of the present invention.
- LNA low-noise amplifier
- the conventional topology for a low-noise amplifier (LNA) commonly used in superheterodyne receivers is shown in Figure 2.
- This two-stage amplifier comprises an npn transistor Ql arranged as a common-emitter (CE) amplifier, driving a cascode npn transistor Q2.
- the LNA further comprises an inductor L and a capacitor C arranged to form an LC resonant tank at the collector of cascode transistor Q2.
- the emitter of the transistor Ql is grounded through an emitter degeneration inductor L e . Note that all biasing details for this circuit are well known to those skilled in the art and have, as such, been omitted.
- the topology of Figure 2 is usually selected for the LNA in a communications receiver in order that noise figure be minimized while still obtaining good gain.
- the cascode transistor Q2 acts to improve stability, frequency response and reverse isolation in the circuit.
- the inductor L and capacitor C set the center frequency of the amplification stage i.e. the frequency at which the gain of the amplifier is highest.
- the degeneration inductor L e aids in improving the matching of the circuit at the input and also improves linearity at the cost of some gain.
- an RF input voltage RF ⁇ n applied to the base of the driving amplifier transistor Ql is transformed into a current that is passed through the cascode transistor Q2 to provide an output voltage RF ou t-
- the output RF ou t of the LNA is usually fed to an off- chip image reject filter to suppress the unwanted image frequency. This approach has significant disadvantages for the reasons stated earlier.
- the present invention introduces a novel topology comprising a notch filter, centered at the unwanted image frequency, integrated with a traditional LNA.
- a topology may, for example, provide for the fabrication of a fully monolithic superheterodyne receiver front-end.
- the fundamental idea on which the present invention is based is shown in Figure 3, where the conventional topology for the cascode LNA of
- Figure 2 is modified by replacing the degeneration inductor L e with an LC resonator.
- the remainder of the circuitry in Figure 3 is essentially identical to that depicted in Figure 2.
- Like component labels are, therefore, used to denote like components. For simplicity, biasing details have also been omitted.
- the LC resonator at the emitter of the driving amplifier Ql comprises an inductor L e and a capacitor C e , appropriately chosen to be centered at a desired notch frequency i.e. the particular image frequency of concern. There will also be some losses associated with the LC resonator and this may be modeled by a resistive element R ⁇ oss as shown in Figure 3.
- a high impedance will be presented to the emitter of the driving transistor Ql.
- a high impedance here will mean that the driving amplifier transistor Ql will have a very low gain at the image frequency.
- the LNA will reflect the image.
- an infinite impedance at the emitter of a driving amplifier transistor will translate into zero gain at the image frequency.
- the LC circuit At frequencies below the resonant frequency of the LC tank at the emitter of Ql, the LC circuit will look inductive and will have an impedance close to that of the actual inductor L e used in the circuit. In the pass band, therefore, the LNA will still look like an ordinary LNA with inductive degeneration. Inductive degeneration is typically needed to provide good matching and linearity without impacting the noise figure .
- Figure 4 depicts a complete LNA circuit topology providing monolithic image rejection according to the present invention.
- this circuit represents a "• combination' notch filter and amplification stage.
- the amplification stage is identical to that in Figures 2 and 3 and includes a common-emitter (CE) amplifier Ql driving an npn cascode transistor Q2.
- a first inductor Li and a first capacitor Ci are arranged in parallel to form an LC resonant tank at the collector of the npn cascode transistor Q2.
- the emitter of the driving CE amplifier Ql is grounded via an emitter degeneration inductor L e ⁇ .
- the emitter of the driving CE amplifier Ql is further coupled to some additional circuitry comprising a parallel resonator circuit to implement a notch filtering function.
- the emitter of the driving amplifier Ql is AC coupled via a coupling capacitor C cp to the base of an npn emitter-follower transistor Q3, whose emitter is loaded with a varactor C f2 _ var , the capacitance of which may be varied by application of a DC bias voltage f re q_tune •
- the collector of the emitter-follower transistor Q3 is tied to a first power rail or supply voltage V cc .
- the collector of the emitter-follower transistor Q3 is also coupled to its respective base via a bias resistor Rias-
- the emitter- follower transistor Q3 is further connected to a current source Ishar at its emitter while a capacitor C f ⁇ is connected across its base-emitter junction.
- the cascode transistor Q2 is interposed in the collector path of the driving CE amplifier Ql to prevent its collector from swinging (thereby eliminating the Miller effect) while passing the collector current through unchanged.
- a fixed DC bias voltage V b i as is applied to the base of the cascode transistor Q2 i.e. the base is assumed to be perfectly AC grounded
- the cascode transistor Q2 is used to reduce the interaction of the tuned output RF 0Ut with the tuned input RF ⁇ n .
- Figure 4 comprising the inductor Li and the capacitor Ci, are used extensively in communications circuits to provide selective amplification of a signal at a desired frequency.
- the components Li and Ci are selected to resonate at the particular frequency which provides the desired passband response.
- the inductor Li or capacitor Ci could also be made variable to enable tuning of the resonant frequency.
- Using a tuned LC circuit as a collector load also provides several other advantages : higher single-stage gain, since the load presents a high impedance at the desired signal frequency while still allowing arbitrary quiescent current; elimination of undesirable loading effects of capacitance since the LC resonant circuit tunes out any capacitance by making it part of the tuned circuit capacitance; and elimination of out- of-band signals and noise owing to the frequency selectivity of the tuned circuit.
- the emitter degeneration inductor L e ⁇ provides the feedback necessary to improve linearity while minimizing noise figure.
- the inductor L e ⁇ should be sized precisely to provide simultaneous noise and power matching and to minimize noise figure. At the same time, the inductor L e ⁇ should be sufficiently large enough to ensure acceptable linearity and stability.
- the filtering function for removing the image frequency is implemented by resonant circuitry placed around the degeneration inductor L e ⁇ to make it resonate at the image frequency.
- the coupling capacitor C cp is used, (capacitors are open circuits at DC and, if large enough, are short circuits over amplifier operating frequencies) . Therefore, the coupling capacitor C cp allows a DC level shift between the driving amplifier Ql and the emitter- follower transistor Q3 of the filtering network.
- the transistor Q3 is connected in common-collector configuration and forms an active feedback circuit that cancels any losses in the resonator, therefore making it a perfect open circuit at the resonant frequency.
- the bias resistor Rbia s simply provides a bias voltage to the base of the transistor Q3 so that it can turn on and be active.
- the capacitors Cfi,C f2 _ V a r and the inductor L e ⁇ set the frequency of the notch.
- the capacitor Cf 2 _ var s implemented using a tunable capacitance (varactor) to make the filter tunable and to overcome variations in device parameters introduced by unintended variations in the fabrication process.
- the current source I sharp sets the current flowing through the transistor Q3.
- any capacitance placed in the emitter of the driving amplifier Ql can result in negative resistance at the base which can lead to instability in the circuit. This is, in fact, why capacitive degeneration is not widely used in the art. In the topology of the present invention, however, the frequency range over which the emitter of the driving amplifier Ql will have a significant negative reactance is fairly limited, hindering its ability to oscillate.
- the active feedback circuit will approximate a perfect open circuit and, therefore, have an infinite impedance.
- the amplification stage With an infinite amount of degeneration, or resistance in the emitter of the driving amplifier Ql, the amplification stage will have no gain.
- the notch frequency is tuned to be centered at the frequency of the undesired image.
- the varactor C f2 _ var effectively controls the tuning range.
- the frequency of the notch can be centered by adjusting the varactor capacitance C f2 _ var with the DC bias voltage Vf re q_une-
- the notch depth may be controlled by adjusting the current I shar p ⁇ commonly referred to as "Q-tuning".
- Q-tuning When the current I S arP is adjusted for "Q tuning" , this will also change the emitter-base capacitance of the transistor Q3, in principle affecting the resonant frequency.
- the capacitor C f ⁇ connected across the baser-emitter junction of the transistor Q3 decouples the Q-tuning from the frequency tuning i.e. the notch frequency is practically unchanged when the Q tuning is performed.
- the capacitor C fi also improves the linearity of the notch circuit by reducing the amount of voltage across the base-emitter junction of the transistor Q3.
- the resonator circuit with negative feedback at the emitter of the driving amplifier Ql is implemented with the transistor Q3 connected in a common-collector configuration.
- this is just one possible implementation out of many.
- a resonator with negative feedback may be implemented in a variety of other ways including, but not limited to, common- base and common-emitter versions of the particular circuit shown.
- MOSFET technology common- gate or common-source configurations are just as valid.
- transistors Ql and Q2 should be large-size devices on the order of 2x20 ⁇ m emitter (i.e. two emitter fingers each with a length of 20 ⁇ m) .
- the inductor Li of the LC tank should be approximately 0.9 nH and the capacitor Ci approximately 750 fF.
- a 0.4 nH on-chip degeneration inductor L e ⁇ can be used.
- the coupling capacitor C cp should be fairly large, at 15 pF for example.
- the capacitor C f i should be approximately 2 pF, the bias resistor R D i as approximately 5 k ⁇ , and the varactor C f2 _ var on the order of 1.5 pF.
- the transistor Q3 forming the active feedback circuit should also be a large-size device comparable to the size of the transistors Ql, Q2 comprising the amplification stage i.e. approximately 2x20 ⁇ m.
- the sizing of the transistors Ql and Q2 and the inductor L e ⁇ comprising the LNA portion of the circuit should satisfy simultaneous noise and power matching requirements.
- the value of the degeneration inductor L e ⁇ should be slightly reduced to compensate for the fact that the presence of the resonator will raise it slightly from its nominal value in the pass band of the circuit.
- the resistor Rbias provides bias to transistor Q3 and its value is not a critical design parameter.
- the coupling capacitor C cp should be made as large as practically possible so that its presence does not impede the ability of the circuit to overcome its losses although not so large that its parasitic component causes large signal loss.
- the transistor Q3 should generally be made very large in order that its parasitic resistance does not create additional losses to be overcome.
- LNAs have traditionally provided good noise figure and good linearity due to the arrangement of transistors in the signal path. Filters, however, are usually quite complicated and the arrangements of transistors and other circuit elements does not usually lead to good performance.
- the resonator will look inductive below its resonant frequency and will, therefore, have an impedance close to that of the actual inductor Lei placed in the circuit. Therefore, the topology of the present invention looks just like a traditional LNA with inductive degeneration in the desired pass band.
- topology of the present invention is not limited to the bipolar technology shown in the specific embodiments, but may alternatively be implemented using CMOS technology, MESFETs, JFETs, vacuum tubes etc. It is a well known fact that RF circuits may be implemented using any available technology that provides voltage-controlled or current-controlled current sources. For example, the circuit of the present invention would still function if all the bipolar transistors were replaced with corresponding CMOS transistors. Of course, the CMOS transistors would have to be sized appropriately to yield good performance. Therefore optimization of the circuit would be conducted as for the bipolar implementation described in the specific embodiments.
- ground connections in Figure 4 may alternatively be replaced by connections to a second power rail.
- a negative power rail or supply voltage, -V EE , m y be substituted for ground as long as the voltage difference between the two power rails is kept sufficiently small.
- the coupling capacitor C cp is used to AC couple the filtering network to the emitter of the driving amplifier Ql .
- AC coupling means is not in any way limited to the use of a capacitor.
- the coupling capacitor C cp may be substituted for by a transformer, or any other element that provides a DC open circuit and an AC short circuit.
- the concept of the invention is not in any way limited to the LNA application described but may be applied to any multi- terminal circuit element that supplies a signal at its output containing an unwanted image frequency component.
- the notch filtering network may alternatively be AC coupled to a mixer or buffer amplifier.
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Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE60125379T DE60125379T2 (en) | 2000-08-25 | 2001-08-24 | MIXER USING A MIRROR FREQUENCY SUPPRESSION FILTER |
AU2001287425A AU2001287425A1 (en) | 2000-08-25 | 2001-08-24 | Mixer with image reject filter |
EP01966881A EP1312157B1 (en) | 2000-08-25 | 2001-08-24 | A novel on-chip image reject filter |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/645,323 | 2000-08-25 | ||
US09/645,323 US6681103B1 (en) | 2000-08-25 | 2000-08-25 | On-chip image reject filter |
Publications (3)
Publication Number | Publication Date |
---|---|
WO2002017477A2 true WO2002017477A2 (en) | 2002-02-28 |
WO2002017477A3 WO2002017477A3 (en) | 2002-10-03 |
WO2002017477B1 WO2002017477B1 (en) | 2003-02-13 |
Family
ID=24588553
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/CA2001/001214 WO2002017477A2 (en) | 2000-08-25 | 2001-08-24 | Mixer with image reject filter |
Country Status (6)
Country | Link |
---|---|
US (1) | US6681103B1 (en) |
EP (1) | EP1312157B1 (en) |
AT (1) | ATE349104T1 (en) |
AU (1) | AU2001287425A1 (en) |
DE (1) | DE60125379T2 (en) |
WO (1) | WO2002017477A2 (en) |
Cited By (2)
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WO2007034231A1 (en) * | 2005-09-26 | 2007-03-29 | Glonav Limited | Multistage resonant amplifier system and method |
CN102611394A (en) * | 2011-01-20 | 2012-07-25 | 联芯科技有限公司 | Low-noise amplifier and a front-end system with same |
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US7333791B2 (en) * | 2001-12-11 | 2008-02-19 | Microtune (Texas), L.P. | Use of an image reject mixer in a forward data channel tuner |
DE60218812D1 (en) * | 2001-12-28 | 2007-04-26 | St Microelectronics Srl | Method for regulating the source voltage during the programming of a nonvolatile memory cell and corresponding programming circuit |
KR100846486B1 (en) * | 2002-05-06 | 2008-07-17 | 삼성전자주식회사 | Image-reject Antenna |
EP1676391B1 (en) * | 2003-06-25 | 2011-05-18 | Nxp B.V. | Lossless transfer of events across clock domains |
US7884886B2 (en) * | 2003-10-27 | 2011-02-08 | Zoran Corporation | Integrated channel filter and method of operation |
US7266360B2 (en) * | 2004-04-07 | 2007-09-04 | Neoreach, Inc. | Low noise amplifier for wireless communications |
US7202762B2 (en) * | 2004-06-09 | 2007-04-10 | Raytheon Company | Q enhancement circuit and method |
US7343146B2 (en) * | 2004-08-13 | 2008-03-11 | Nokia Corporation | Single chip LNA and VCO having similar resonant circuit topology and using same calibration signal to compensate for process variations |
KR20070052782A (en) * | 2004-09-10 | 2007-05-22 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | Tunable cascode lna with flat gain response over a wide frequency range |
CN101438503B (en) * | 2004-11-03 | 2012-06-20 | 伟俄内克斯研究公司 | Ultrawideband CMOS transceiver |
US7304533B2 (en) * | 2005-04-15 | 2007-12-04 | Microtune (Texas), L.P. | Integrated channel filter using multiple resonant filters and method of operation |
US7489192B2 (en) * | 2006-05-22 | 2009-02-10 | Theta Microelectronics, Inc. | Low-noise amplifiers |
US7554397B2 (en) * | 2006-05-22 | 2009-06-30 | Theta Microelectronics, Inc. | Highly linear low-noise amplifiers |
US9413315B2 (en) * | 2006-08-31 | 2016-08-09 | Texas Instruments Incorporated | Low noise amplifier with embedded filter and related wireless communication unit |
US8237509B2 (en) * | 2007-02-23 | 2012-08-07 | Qualcomm, Incorporated | Amplifier with integrated filter |
CN100578089C (en) * | 2007-06-29 | 2010-01-06 | 宁波新海电气股份有限公司 | Igniting gun with safety mechanism |
TWI382676B (en) * | 2007-12-28 | 2013-01-11 | Ind Tech Res Inst | Coherent tunable filter apparatus and wireless communication front-end circuit thereof |
US8314653B1 (en) * | 2009-02-18 | 2012-11-20 | Rf Micro Devices, Inc. | Using degeneration in an active tunable low-noise radio frequency bandpass filter |
US8018288B2 (en) * | 2009-04-13 | 2011-09-13 | Intel Corporation | High-linearity low noise amplifier |
TWI483542B (en) * | 2009-07-10 | 2015-05-01 | Chi Mei Comm Systems Inc | Amplifier circuit |
TWI477062B (en) * | 2009-08-10 | 2015-03-11 | Chi Mei Comm Systems Inc | Power amplifier circuit |
US8588353B2 (en) | 2011-04-01 | 2013-11-19 | Texas Instruments Incorporated | Frequency selective IQ correction |
US8626106B2 (en) * | 2011-12-06 | 2014-01-07 | Tensorcom, Inc. | Method and apparatus of an input resistance of a passive mixer to broaden the input matching bandwidth of a common source/gate LNA |
US9595935B2 (en) | 2015-05-12 | 2017-03-14 | Qualcomm Incorporated | Active notch filter |
US9985592B2 (en) * | 2015-05-13 | 2018-05-29 | Skyworks Solutions, Inc. | High gain RF power amplifier with negative capacitor |
US10164669B2 (en) * | 2015-10-16 | 2018-12-25 | Skyworks Solutions, Inc. | Hybrid amplifier and signal combiner |
US11201595B2 (en) | 2015-11-24 | 2021-12-14 | Skyworks Solutions, Inc. | Cascode power amplifier with switchable output matching network |
US10536119B2 (en) | 2018-02-28 | 2020-01-14 | Avago Technologies International Sales Pte. Limited | Amplifier with second-harmonic trap |
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2000
- 2000-08-25 US US09/645,323 patent/US6681103B1/en not_active Expired - Lifetime
-
2001
- 2001-08-24 AU AU2001287425A patent/AU2001287425A1/en not_active Abandoned
- 2001-08-24 EP EP01966881A patent/EP1312157B1/en not_active Expired - Lifetime
- 2001-08-24 DE DE60125379T patent/DE60125379T2/en not_active Expired - Lifetime
- 2001-08-24 AT AT01966881T patent/ATE349104T1/en not_active IP Right Cessation
- 2001-08-24 WO PCT/CA2001/001214 patent/WO2002017477A2/en active IP Right Grant
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US5374899A (en) * | 1993-11-10 | 1994-12-20 | Itt Corporation | Self biased power amplifier employing FETs |
EP0831584A1 (en) * | 1996-09-20 | 1998-03-25 | Nokia Mobile Phones Ltd. | Amplifier system |
EP0886384A2 (en) * | 1997-06-13 | 1998-12-23 | Lucent Technologies Inc. | Single-stage dual-band low-noise amplifier for use in a wireless communication system receiver |
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WO2007034231A1 (en) * | 2005-09-26 | 2007-03-29 | Glonav Limited | Multistage resonant amplifier system and method |
CN102611394A (en) * | 2011-01-20 | 2012-07-25 | 联芯科技有限公司 | Low-noise amplifier and a front-end system with same |
Also Published As
Publication number | Publication date |
---|---|
US6681103B1 (en) | 2004-01-20 |
DE60125379D1 (en) | 2007-02-01 |
DE60125379T2 (en) | 2007-09-27 |
EP1312157B1 (en) | 2006-12-20 |
AU2001287425A1 (en) | 2002-03-04 |
EP1312157A2 (en) | 2003-05-21 |
ATE349104T1 (en) | 2007-01-15 |
WO2002017477A3 (en) | 2002-10-03 |
WO2002017477B1 (en) | 2003-02-13 |
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