WO2002015397A3 - Amplificateur a grande linearite et adaptation d'impedance comportant un mode de derivation a faible perte - Google Patents

Amplificateur a grande linearite et adaptation d'impedance comportant un mode de derivation a faible perte Download PDF

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Publication number
WO2002015397A3
WO2002015397A3 PCT/US2001/025669 US0125669W WO0215397A3 WO 2002015397 A3 WO2002015397 A3 WO 2002015397A3 US 0125669 W US0125669 W US 0125669W WO 0215397 A3 WO0215397 A3 WO 0215397A3
Authority
WO
WIPO (PCT)
Prior art keywords
region
amplifier
impedance matching
matching network
low
Prior art date
Application number
PCT/US2001/025669
Other languages
English (en)
Other versions
WO2002015397A2 (fr
Inventor
Sheng-Hann Lee
Original Assignee
Maxim Integrated Products
Sheng-Hann Lee
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Maxim Integrated Products, Sheng-Hann Lee filed Critical Maxim Integrated Products
Publication of WO2002015397A2 publication Critical patent/WO2002015397A2/fr
Publication of WO2002015397A3 publication Critical patent/WO2002015397A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/108—A coil being added in the drain circuit of a FET amplifier stage, e.g. for noise reducing purposes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/156—One or more switches are realised in the feedback circuit of the amplifier stage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/249—A switch coupled in the input circuit of an amplifier being controlled by a circuit, e.g. feedback circuitry being controlling the switch
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/372—Noise reduction and elimination in amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/414—A switch being coupled in the output circuit of an amplifier to switch the output on/off
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/492—A coil being added in the source circuit of a transistor amplifier stage as degenerating element
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7203—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by a switch in the bias circuit of the amplifier controlling a bias current in the amplifier

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

L'invention concerne un amplificateur à gain sélectionnable. L'amplificateur comprend une entrée, une sortie et un premier transistor comportant une région de commande, une première et une deuxième région. La conduction de la première à la deuxième région du premier transistor est sensible à la tension de la région de commande par rapport à la deuxième région. Un circuit d'adaptation d'impédance d'entrée est couplé à l'entrée et à la région de commande, et un circuit d'adaptation d'impédance de sortie est couplé à la sortie et à la première région. Un premier circuit de polarisation sélectionnable est couplé à la région de commande pour polariser de manière sélectionnée le transistor entre des états de marche et d'arrêt. Un circuit de dérivation passif est couplé au circuit d'adaptation d'impédance d'entrée et au circuit d'adaptation d'impédance de sortie. Le circuit de dérivation passif comporte un premier commutateur pour coupler de manière sélectionnable le circuit d'adaptation d'impédance d'entrée au circuit d'adaptation d'impédance de sortie par le circuit de dérivation passif.
PCT/US2001/025669 2000-08-16 2001-08-16 Amplificateur a grande linearite et adaptation d'impedance comportant un mode de derivation a faible perte WO2002015397A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US64096400A 2000-08-16 2000-08-16
US09/640,964 2000-08-16

Publications (2)

Publication Number Publication Date
WO2002015397A2 WO2002015397A2 (fr) 2002-02-21
WO2002015397A3 true WO2002015397A3 (fr) 2003-09-25

Family

ID=24570388

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/025669 WO2002015397A2 (fr) 2000-08-16 2001-08-16 Amplificateur a grande linearite et adaptation d'impedance comportant un mode de derivation a faible perte

Country Status (1)

Country Link
WO (1) WO2002015397A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106464278B (zh) * 2014-05-22 2020-01-03 高通股份有限公司 电子设备及用于处理信号的方法

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10239854A1 (de) * 2002-08-29 2004-03-11 Infineon Technologies Ag Vorverstärkerschaltung und Empfangsanordnung mit der Vorverstärkerschaltung
US7512386B2 (en) 2003-08-29 2009-03-31 Nokia Corporation Method and apparatus providing integrated load matching using adaptive power amplifier compensation
US20080143442A1 (en) * 2005-02-07 2008-06-19 Erik Hemmendorff Electrical Circuit
US7359686B2 (en) 2005-02-16 2008-04-15 Microtune (Texas), L.P. Radio-frequency amplifier system
JP5141389B2 (ja) * 2008-06-12 2013-02-13 三菱電機株式会社 電力増幅器
US7898325B2 (en) 2009-05-28 2011-03-01 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Amplifier with bypass switch
US9413301B2 (en) 2012-02-01 2016-08-09 Telefonaktiebolaget Lm Ericsson (Publ) Noise canceling low-noise amplifier
EP2624447B8 (fr) * 2012-02-01 2014-12-10 Telefonaktiebolaget L M Ericsson (publ) Amplificateur à faible bruit antibruit
ES2551883T3 (es) * 2012-02-01 2015-11-24 Telefonaktiebolaget L M Ericsson (Publ) Amplificador de bajo ruido
US9106185B2 (en) * 2013-03-11 2015-08-11 Qualcomm Incorporated Amplifiers with inductive degeneration and configurable gain and input matching
US8970296B1 (en) 2013-03-26 2015-03-03 Guerrilla RF, Inc. Amplifying circuit with bypass mode and series isolation switch
CN104753477B (zh) * 2013-12-30 2018-07-20 国民技术股份有限公司 功率放大器及其增益切换电路
CN112737553B (zh) * 2019-10-14 2024-06-18 瑞昱半导体股份有限公司 靴带式开关

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4755769A (en) * 1987-05-20 1988-07-05 General Electric Company Composite amplifier with efficient power reduction
US4760363A (en) * 1986-04-16 1988-07-26 Blaupunkt-Werke Gmbh High frequency signal switching system
US5661434A (en) * 1995-05-12 1997-08-26 Fujitsu Compound Semiconductor, Inc. High efficiency multiple power level amplifier circuit
EP0837559A1 (fr) * 1996-10-18 1998-04-22 Matsushita Electric Industrial Co., Ltd. Amplificateur de puissance linéaire à rendement élevé pour des gammes de fréquence différentes et amplificateur de puissance à rendement élevé
EP0847135A2 (fr) * 1996-12-09 1998-06-10 Sony Corporation Dispositif amplificateur haute fréquence à gain variable
US6043721A (en) * 1998-02-04 2000-03-28 Motorola, Inc. Dual band amplifier

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4760363A (en) * 1986-04-16 1988-07-26 Blaupunkt-Werke Gmbh High frequency signal switching system
US4755769A (en) * 1987-05-20 1988-07-05 General Electric Company Composite amplifier with efficient power reduction
US5661434A (en) * 1995-05-12 1997-08-26 Fujitsu Compound Semiconductor, Inc. High efficiency multiple power level amplifier circuit
EP0837559A1 (fr) * 1996-10-18 1998-04-22 Matsushita Electric Industrial Co., Ltd. Amplificateur de puissance linéaire à rendement élevé pour des gammes de fréquence différentes et amplificateur de puissance à rendement élevé
EP0847135A2 (fr) * 1996-12-09 1998-06-10 Sony Corporation Dispositif amplificateur haute fréquence à gain variable
US6043721A (en) * 1998-02-04 2000-03-28 Motorola, Inc. Dual band amplifier

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106464278B (zh) * 2014-05-22 2020-01-03 高通股份有限公司 电子设备及用于处理信号的方法

Also Published As

Publication number Publication date
WO2002015397A2 (fr) 2002-02-21

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