WO2002007228A1 - Light emitting diode with lens - Google Patents
Light emitting diode with lens Download PDFInfo
- Publication number
- WO2002007228A1 WO2002007228A1 PCT/GB2001/003155 GB0103155W WO0207228A1 WO 2002007228 A1 WO2002007228 A1 WO 2002007228A1 GB 0103155 W GB0103155 W GB 0103155W WO 0207228 A1 WO0207228 A1 WO 0207228A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- lens
- light emitting
- led
- refractive index
- emitting diode
- Prior art date
Links
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000000956 alloy Substances 0.000 claims abstract description 3
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 3
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 3
- 239000000463 material Substances 0.000 claims description 9
- 230000003287 optical effect Effects 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000007493 shaping process Methods 0.000 abstract description 3
- 239000000853 adhesive Substances 0.000 abstract description 2
- 230000001070 adhesive effect Effects 0.000 abstract description 2
- 239000011248 coating agent Substances 0.000 abstract description 2
- 238000000576 coating method Methods 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001720 carbohydrates Chemical class 0.000 description 1
- 235000014633 carbohydrates Nutrition 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- XTQHKBHJIVJGKJ-UHFFFAOYSA-N sulfur monoxide Chemical class S=O XTQHKBHJIVJGKJ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
Definitions
- the present invention relates to light emitting diodes (LEDs). It is particularly but not exclusively directed to LEDs which emit electromagnetic radiation through a side surface of the semiconductor structure which lies parallel to the diode junction.
- Light emitting diodes have many applications, including telecommunications, spectroscopy and gas sensing.
- a recent development is that of room temperature infra-red light emitting diodes which cover the 3 to 12 micron spectral region where gases such as carbon dioxide, carbon monoxide, nitrogen oxides, sulphur oxides and carbohydrates have strong selective absorption bands enabling quantitative gas detection.
- a major reason for the low output power is the inefficiency in transmitting the light generated at the diode junction to the exterior, and a principal cause thereof is total internal reflection within the device.
- light can only pass from an optically dense medium (high real refractive index of value n) to air (where n is nominally unity) if its angle of incidence is no greater than sin _I (l/n), and it otherwise undergoes total internal reflection.
- the present invention is directed to reducing the amount of light lost due to reflection within LEDs, and/or to increasing the directionality of light emitted from LEDs.
- the first step should reduce the optical output power necessary from the diode junction for a given device overall output, or should increase the device overall output for a given output from the diode junction.
- the second step should reduce the optical output power necessary from the diode junction for a given device output in a predetermined direction, or should increase the device output in a predetermined direction for a given output from the diode junction.
- the glass dome is similar, except that the a spherical segment base is replaced by a coaxial right cylinder base of radius r and height r/n, which is easier to manufacture but does lead to a some lowering of efficiency.
- the present invention provides a light emitting diode device provided on its light emitting surface with a lens comprising a substantially hemispherical portion of radius r on a base portion of height h, where h is no greater than 0.95r/n, where n is the real refractive index of the lens.
- the present invention also provides light emitting diode device provided on its light emitting surface with a lens comprising a substantially hemispherical portion of radius r on a base portion of height h, where h is no greater than (r/n)(l - d/2r) where d is the LED diameter and n is the real refractive index of the lens.
- the invention extends to a lens as defined in either of the two preceding paragraphs. It also extends to methods of making a device (or an adapted LED) as defined in either of the two preceding paragraphs.
- h is no greater than 0.85r/n.
- a preferred lower limit for h is 0.3r/n, more preferably 0.5r/n.
- the focussing element may be formed in an additional layer made integrally with LED, for example by deposition of a semiconducting layer during or after formation of the LED. Shaping of the additional layer may be by any means known per se, for example by etching or ion beam milling, e.g. after deposition thereof.
- the focussing element may be made from a separate layer, for example of glass or a semiconducting material such as germanium, which is secured to the light emitting surface of the LED in optical contact therewith.
- optical contact is meant that the gap between the device and the element is no greater than one quarter of the LED wavelength within the material (i.e. vacuum wavelength divided by n), thus providing a condition in which total internal reflection is effectively prevented ⁇ and permitting light generated within the device to penetrate through the element surface over a wide range of incident angles.
- the securing is effected by use of a sufficiently thin layer of optically transparent adhesive. This will generally require specialised or adapted tooling and a controlled pressure.
- While shaping of a layer thus secured may be effected after the securing step, it is preferably effected prior thereto.
- the refractive index of the material of the focussing element preferably has a refractive index differing from the adjacent LED layer by no more than 1, more preferably no more than 0.5, even more preferably no more than 0.3, and most preferably, it equals that of the adjacent LED layer, e.g. by being made of the same material.
- Figure 1 shows an embodiment of the invention in diagrammatic cross-section
- Figure 2 is a ray tracing for a typical dome structure with base height of r/n.
- Figure 1 shows a first arrangement according to the invention in which an indium antimonide or indium antimonide alloy LED mesa 1 is formed upon (and normally integrally with) a semiconductor substrate 2, the latter in turn being supported upon a further substrate 3.
- the flat surface 4 of a germanium lens 5 is secured to a flat light emitting surface of the diode mesa 1 by a layer 6 of optically transparent glue, using tooling and a controlled pressure to ensure that the glue thickness is less than one quarter of the LED wavelength inside the material.
- the lens 5 comprises a convex (hemispherical) portion 7 with a radius of curvature of 2.5 mm, and a right cylindrical base portion 8 which is 0.5 mm high (thick), allowing the light from the LED to be retransmitted without total internal reflection restrictions.
- the LED is coaxial with the lens 5 and has a diameter of up to 1 mm.
- Spherical aberration of lens 5 can be avoided only for point sources on the axis, and for all sources of finite dimension the spherical aberration is significant. In the latter case, as in Figure 1, both the apparent source position and its apparent area are determined by the circle of least confusion, which depends strongly on the actual emitting area and also on the thickness h. It should therefore be clear that the geometry normally needs to be optimised with respect to the brightness of the LED 1 and the angular distribution of light therefrom.
- Optimisation of the height h for a particular LED light emitting area is effected by ray tracing the position and diameter of the circle of least confusion, using ray tracing software.
- the surface of the lens 5 will normally be provided with an antireflection coating.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2001270810A AU2001270810A1 (en) | 2000-07-19 | 2001-07-18 | Light emitting diode with lens |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0017659.4 | 2000-07-19 | ||
GB0017659A GB0017659D0 (en) | 2000-07-19 | 2000-07-19 | Light emitting diode with lens |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2002007228A1 true WO2002007228A1 (en) | 2002-01-24 |
Family
ID=9895910
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/GB2001/003155 WO2002007228A1 (en) | 2000-07-19 | 2001-07-18 | Light emitting diode with lens |
Country Status (3)
Country | Link |
---|---|
AU (1) | AU2001270810A1 (en) |
GB (1) | GB0017659D0 (en) |
WO (1) | WO2002007228A1 (en) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003071221A3 (en) * | 2002-02-23 | 2003-12-24 | Diehl Munitionssysteme Gmbh | Proximity sensor, especially for ignition of the warhead of a shell directed against an approaching missile |
WO2006049805A1 (en) * | 2004-10-29 | 2006-05-11 | 3M Innovative Properties Company | High brightness led package with compound optical element(s) |
CN101513120A (en) * | 2006-08-03 | 2009-08-19 | 英特曼帝克司公司 | LED lighting arrangement including light emitting phosphor |
US7798678B2 (en) | 2005-12-30 | 2010-09-21 | 3M Innovative Properties Company | LED with compound encapsulant lens |
CN101956909A (en) * | 2009-07-17 | 2011-01-26 | 奇美电子股份有限公司 | Light source, backlight module using same, and liquid crystal display device using same |
US8067884B2 (en) | 2006-08-03 | 2011-11-29 | Intematrix Corporation | LED lighting arrangement including a substantially spherical optical component having a surface partially coated with a light emitting phosphor |
US8957585B2 (en) | 2010-10-05 | 2015-02-17 | Intermatix Corporation | Solid-state light emitting devices with photoluminescence wavelength conversion |
US9512970B2 (en) | 2013-03-15 | 2016-12-06 | Intematix Corporation | Photoluminescence wavelength conversion components |
US9546765B2 (en) | 2010-10-05 | 2017-01-17 | Intematix Corporation | Diffuser component having scattering particles |
US10557594B2 (en) | 2012-12-28 | 2020-02-11 | Intematix Corporation | Solid-state lamps utilizing photoluminescence wavelength conversion components |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1586188A (en) * | 1977-05-23 | 1981-03-18 | Philips Nv | Optical system |
US4301461A (en) * | 1978-12-22 | 1981-11-17 | Canon Kabushiki Kaisha | Light emitting diode |
US4339689A (en) * | 1979-01-29 | 1982-07-13 | Matsushita Electric Industrial Co., Ltd. | Light emitting diode and method of making the same |
US4830454A (en) * | 1987-11-06 | 1989-05-16 | Siemens Aktiengesellschaft | Spherical planoconvex lens for optically coupling a semiconductor laser to an optical waveguide |
EP0415640A2 (en) * | 1989-08-29 | 1991-03-06 | Hewlett-Packard Company | High efficiency lamp or light accepter |
EP0481552A1 (en) * | 1990-10-17 | 1992-04-22 | Gec-Marconi Limited | Infrared detector devices |
US5685919A (en) * | 1995-03-27 | 1997-11-11 | Agency Of Industrial Science & Technology | Method and device for improved photoelectric conversion |
US5786665A (en) * | 1995-05-23 | 1998-07-28 | Sharp Kabushiki Kaisha | Plane-shaped lighting device and a display using such a device |
-
2000
- 2000-07-19 GB GB0017659A patent/GB0017659D0/en not_active Ceased
-
2001
- 2001-07-18 WO PCT/GB2001/003155 patent/WO2002007228A1/en active Application Filing
- 2001-07-18 AU AU2001270810A patent/AU2001270810A1/en not_active Abandoned
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1586188A (en) * | 1977-05-23 | 1981-03-18 | Philips Nv | Optical system |
US4301461A (en) * | 1978-12-22 | 1981-11-17 | Canon Kabushiki Kaisha | Light emitting diode |
US4339689A (en) * | 1979-01-29 | 1982-07-13 | Matsushita Electric Industrial Co., Ltd. | Light emitting diode and method of making the same |
US4830454A (en) * | 1987-11-06 | 1989-05-16 | Siemens Aktiengesellschaft | Spherical planoconvex lens for optically coupling a semiconductor laser to an optical waveguide |
EP0415640A2 (en) * | 1989-08-29 | 1991-03-06 | Hewlett-Packard Company | High efficiency lamp or light accepter |
EP0481552A1 (en) * | 1990-10-17 | 1992-04-22 | Gec-Marconi Limited | Infrared detector devices |
US5685919A (en) * | 1995-03-27 | 1997-11-11 | Agency Of Industrial Science & Technology | Method and device for improved photoelectric conversion |
US5786665A (en) * | 1995-05-23 | 1998-07-28 | Sharp Kabushiki Kaisha | Plane-shaped lighting device and a display using such a device |
Non-Patent Citations (2)
Title |
---|
"PREPARATION AND PROPERTIES OF MONOLITHICALLY INTEGRATED LENSES ON INGAASP/INP LIGHT-EMITTING DIODES", ELECTRONICS LETTERS, IEE STEVENAGE, GB, vol. 18, no. 19, 1982, pages 831 - 832, XP000885201, ISSN: 0013-5194 * |
BOUCHUT P ET AL: "HIGH-EFFICIENCY INFRARED LIGHT EMITTING DIODES MADE IN LIQUID PHASE EPITAXY AND MOLECULAR BEAM EPITAXY HGCDTE LAYERS", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART B, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 9, no. 3, 1 May 1991 (1991-05-01), pages 1794 - 1798, XP000222588, ISSN: 0734-211X * |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003071221A3 (en) * | 2002-02-23 | 2003-12-24 | Diehl Munitionssysteme Gmbh | Proximity sensor, especially for ignition of the warhead of a shell directed against an approaching missile |
WO2006049805A1 (en) * | 2004-10-29 | 2006-05-11 | 3M Innovative Properties Company | High brightness led package with compound optical element(s) |
US7304425B2 (en) | 2004-10-29 | 2007-12-04 | 3M Innovative Properties Company | High brightness LED package with compound optical element(s) |
US7798678B2 (en) | 2005-12-30 | 2010-09-21 | 3M Innovative Properties Company | LED with compound encapsulant lens |
US8067884B2 (en) | 2006-08-03 | 2011-11-29 | Intematrix Corporation | LED lighting arrangement including a substantially spherical optical component having a surface partially coated with a light emitting phosphor |
CN101513120A (en) * | 2006-08-03 | 2009-08-19 | 英特曼帝克司公司 | LED lighting arrangement including light emitting phosphor |
US9045688B2 (en) | 2006-08-03 | 2015-06-02 | Intematix Corporation | LED lighting arrangement including light emitting phosphor |
US9595644B2 (en) | 2006-08-03 | 2017-03-14 | Intematix Corporation | LED lighting arrangement including light emitting phosphor |
CN101956909A (en) * | 2009-07-17 | 2011-01-26 | 奇美电子股份有限公司 | Light source, backlight module using same, and liquid crystal display device using same |
US8957585B2 (en) | 2010-10-05 | 2015-02-17 | Intermatix Corporation | Solid-state light emitting devices with photoluminescence wavelength conversion |
US9546765B2 (en) | 2010-10-05 | 2017-01-17 | Intematix Corporation | Diffuser component having scattering particles |
US10557594B2 (en) | 2012-12-28 | 2020-02-11 | Intematix Corporation | Solid-state lamps utilizing photoluminescence wavelength conversion components |
US9512970B2 (en) | 2013-03-15 | 2016-12-06 | Intematix Corporation | Photoluminescence wavelength conversion components |
Also Published As
Publication number | Publication date |
---|---|
GB0017659D0 (en) | 2000-09-06 |
AU2001270810A1 (en) | 2002-01-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5055892A (en) | High efficiency lamp or light accepter | |
US6674096B2 (en) | Light-emitting diode (LED) package and packaging method for shaping the external light intensity distribution | |
US4638343A (en) | Optical radiation source or detector device having plural radiating or receiving characteristics | |
KR101173319B1 (en) | Side reflector for illumination using light emitting diode | |
US6547423B2 (en) | LED collimation optics with improved performance and reduced size | |
US8136967B2 (en) | LED optical lens | |
JP5078419B2 (en) | Light emitting module and light receiving module | |
US7733580B2 (en) | Light emitting module and light receiving module | |
US5705834A (en) | Increased efficiency LED | |
WO2002007228A1 (en) | Light emitting diode with lens | |
WO2011055744A1 (en) | Electromagnetic wave emission device and electromagnetic wave detection device | |
CN213810462U (en) | Laser lighting device and lamp | |
JP7399378B2 (en) | Optical devices, lighting devices, display devices and optical communication devices | |
US20120281417A1 (en) | Directional light source device | |
US8174036B2 (en) | Lighting device | |
CN115210886A (en) | Miniature LED equipment | |
US10794565B2 (en) | Dielectric collimator with a rejecting center lens | |
US11456396B2 (en) | Photoelectric conversion device for solar photovoltaic generation | |
WO2002007230A1 (en) | Light emitting diodes | |
US11888438B2 (en) | Optical element, lighting apparatus and solar cell device | |
FI117492B (en) | Light emitting device and method for directing light | |
US20060237736A1 (en) | Light-emitting diode and method for improving emitting directivity of light-emitting chip | |
EP3239597B1 (en) | Lighting apparatus | |
WO2002007229A1 (en) | Light emitting diode arrangements | |
JP2006332411A (en) | Light emitting device, light receiving device and equipment provided with them |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG US UZ VN YU ZA ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
REG | Reference to national code |
Ref country code: DE Ref legal event code: 8642 |
|
122 | Ep: pct application non-entry in european phase | ||
NENP | Non-entry into the national phase |
Ref country code: JP |