WO2002007223A1 - A power mos transistor comprising a plurality of transistor segments with different threshold voltages - Google Patents
A power mos transistor comprising a plurality of transistor segments with different threshold voltages Download PDFInfo
- Publication number
- WO2002007223A1 WO2002007223A1 PCT/SE2001/001596 SE0101596W WO0207223A1 WO 2002007223 A1 WO2002007223 A1 WO 2002007223A1 SE 0101596 W SE0101596 W SE 0101596W WO 0207223 A1 WO0207223 A1 WO 0207223A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- transistor
- transistor segments
- segments
- rest
- group
- Prior art date
Links
- 239000007943 implant Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 2
- 239000002184 metal Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
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- H—ELECTRICITY
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
- H01L29/1045—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface the doping structure being parallel to the channel length, e.g. DMOS like
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4983—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4983—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material
- H01L29/4991—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material comprising an air gap
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/4175—Source or drain electrodes for field effect devices for lateral devices where the connection to the source or drain region is done through at least one part of the semiconductor substrate thickness, e.g. with connecting sink or with via-hole
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Amplifiers (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP01950162A EP1310000A1 (en) | 2000-07-19 | 2001-07-09 | A power mos transistor comprising a plurality of transistor segments with different threshold voltages |
AU2001271188A AU2001271188A1 (en) | 2000-07-19 | 2001-07-09 | A power mos transistor comprising a plurality of transistor segments with different threshold voltages |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE0002714A SE518797C2 (en) | 2000-07-19 | 2000-07-19 | Power LDMOS transistor comprising a plurality of parallel-connected transistor segments with different threshold voltages |
SE0002714-4 | 2000-07-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2002007223A1 true WO2002007223A1 (en) | 2002-01-24 |
Family
ID=20280545
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/SE2001/001596 WO2002007223A1 (en) | 2000-07-19 | 2001-07-09 | A power mos transistor comprising a plurality of transistor segments with different threshold voltages |
Country Status (7)
Country | Link |
---|---|
US (1) | US6818951B2 (en) |
EP (1) | EP1310000A1 (en) |
CN (1) | CN1291496C (en) |
AU (1) | AU2001271188A1 (en) |
SE (1) | SE518797C2 (en) |
TW (1) | TW486822B (en) |
WO (1) | WO2002007223A1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002069406A2 (en) * | 2001-02-26 | 2002-09-06 | Ericsson Inc. | Am/pm non-linearity compensation in fets |
US6503786B2 (en) | 2000-08-08 | 2003-01-07 | Advanced Power Technology, Inc. | Power MOS device with asymmetrical channel structure for enhanced linear operation capability |
WO2004097941A1 (en) | 2003-05-02 | 2004-11-11 | Koninklijke Philips Electronics N.V. | Electronic device comprising a field-effect transistor for high-frequency applications |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7825488B2 (en) | 2006-05-31 | 2010-11-02 | Advanced Analogic Technologies, Inc. | Isolation structures for integrated circuits and modular methods of forming the same |
US7667268B2 (en) * | 2002-08-14 | 2010-02-23 | Advanced Analogic Technologies, Inc. | Isolated transistor |
US6827695B2 (en) | 2002-10-25 | 2004-12-07 | Revivant Corporation | Method of determining depth of compressions during cardio-pulmonary resuscitation |
JP3713490B2 (en) * | 2003-02-18 | 2005-11-09 | 株式会社東芝 | Semiconductor device |
US7220235B2 (en) * | 2003-06-27 | 2007-05-22 | Zoll Medical Corporation | Method and apparatus for enhancement of chest compressions during CPR |
US20050101889A1 (en) * | 2003-11-06 | 2005-05-12 | Freeman Gary A. | Using chest velocity to process physiological signals to remove chest compression artifacts |
WO2005112749A1 (en) * | 2004-05-12 | 2005-12-01 | Zoll Medical Corporation | Ecg rhythm advisory method |
US7565194B2 (en) * | 2004-05-12 | 2009-07-21 | Zoll Medical Corporation | ECG rhythm advisory method |
US7652519B2 (en) * | 2006-06-08 | 2010-01-26 | Telefonaktiebolaget Lm Ericsson (Publ) | Apparatus and method for exploiting reverse short channel effects in transistor devices |
WO2013071959A1 (en) * | 2011-11-15 | 2013-05-23 | X-Fab Semiconductor Foundries Ag | A mos device assembly |
US9653459B2 (en) * | 2012-07-03 | 2017-05-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | MOSFET having source region formed in a double wells region |
US10596064B2 (en) | 2014-03-18 | 2020-03-24 | Zoll Medical Corporation | CPR chest compression system with tonometric input and feedback |
US9165918B1 (en) * | 2014-05-07 | 2015-10-20 | Freescale Semiconductor, Inc. | Composite semiconductor device with multiple threshold voltages |
US9640228B2 (en) * | 2014-12-12 | 2017-05-02 | Globalfoundries Inc. | CMOS device with reading circuit |
US9601614B2 (en) * | 2015-03-26 | 2017-03-21 | Nxp Usa, Inc. | Composite semiconductor device with different channel widths |
EP3673953B1 (en) | 2015-03-27 | 2022-09-14 | Zoll Medical Corporation | Ecg and defibrillator electrode detection and tracking system |
CN106298766A (en) * | 2015-05-27 | 2017-01-04 | 中国科学院苏州纳米技术与纳米仿生研究所 | A kind of power device and the method optimizing power device |
US10978583B2 (en) | 2017-06-21 | 2021-04-13 | Cree, Inc. | Semiconductor devices having a plurality of unit cell transistors that have smoothed turn-on behavior and improved linearity |
US10615273B2 (en) * | 2017-06-21 | 2020-04-07 | Cree, Inc. | Semiconductor devices having a plurality of unit cell transistors that have smoothed turn-on behavior and improved linearity |
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JPS6045053A (en) * | 1983-08-22 | 1985-03-11 | Mitsubishi Electric Corp | Semiconductor device |
US4665423A (en) * | 1981-09-05 | 1987-05-12 | Nippon Telegraph And Telephone Public Corporation | MIS variable resistor |
US5033068A (en) * | 1987-05-21 | 1991-07-16 | Kabushiki Kaisha Toshiba | Charge transfer device |
EP0905788A2 (en) * | 1997-09-29 | 1999-03-31 | Canon Kabushiki Kaisha | MOS type image sensing device |
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US3374407A (en) * | 1964-06-01 | 1968-03-19 | Rca Corp | Field-effect transistor with gate-insulator variations to achieve remote cutoff characteristic |
BE666834A (en) * | 1964-07-13 | |||
US4395725A (en) * | 1980-10-14 | 1983-07-26 | Parekh Rajesh H | Segmented channel field effect transistors |
JPS607179A (en) * | 1983-06-27 | 1985-01-14 | Toshiba Corp | Mos type field effect transistor |
US4843358A (en) * | 1987-05-19 | 1989-06-27 | General Electric Company | Electrically positionable short-circuits |
US4914051A (en) * | 1988-12-09 | 1990-04-03 | Sprague Electric Company | Method for making a vertical power DMOS transistor with small signal bipolar transistors |
JPH03218070A (en) * | 1990-01-23 | 1991-09-25 | New Japan Radio Co Ltd | Mosfet |
JP2572658B2 (en) * | 1990-02-23 | 1997-01-16 | 日本モトローラ株式会社 | Manufacturing method of intelligent power semiconductor device |
US5798550A (en) * | 1990-10-01 | 1998-08-25 | Nippondenso Co. Ltd. | Vertical type semiconductor device and gate structure |
JPH05160407A (en) * | 1991-12-09 | 1993-06-25 | Nippondenso Co Ltd | Vertical insulating gate type semiconductor device and manufacture thereof |
IT1254799B (en) * | 1992-02-18 | 1995-10-11 | St Microelectronics Srl | VDMOS TRANSISTOR WITH IMPROVED VOLTAGE SEALING CHARACTERISTICS. |
US5510747A (en) * | 1993-11-30 | 1996-04-23 | Siliconix Incorporated | Gate drive technique for a bidirectional blocking lateral MOSFET |
DE69431181D1 (en) * | 1994-05-19 | 2002-09-19 | Cons Ric Microelettronica | Power integrated circuit ("PIC") and method of making the same |
JP3470133B2 (en) * | 1994-06-03 | 2003-11-25 | セイコーインスツルメンツ株式会社 | Method for manufacturing semiconductor device |
US5998837A (en) * | 1995-06-02 | 1999-12-07 | Siliconix Incorporated | Trench-gated power MOSFET with protective diode having adjustable breakdown voltage |
US5869371A (en) * | 1995-06-07 | 1999-02-09 | Stmicroelectronics, Inc. | Structure and process for reducing the on-resistance of mos-gated power devices |
KR100223198B1 (en) * | 1996-04-11 | 1999-10-15 | 다니구찌 이찌로오, 기타오카 다카시 | Semiconductor device having high breakdown voltage and method of manufacturing the same |
US5923065A (en) * | 1996-06-12 | 1999-07-13 | Megamos Corporation | Power MOSFET device manufactured with simplified fabrication processes to achieve improved ruggedness and product cost savings |
US6144070A (en) * | 1997-08-29 | 2000-11-07 | Texas Instruments Incorporated | High breakdown-voltage transistor with electrostatic discharge protection |
US5994175A (en) * | 1997-09-05 | 1999-11-30 | Advanced Micro Devices, Inc. | High performance MOSFET with low resistance design |
JP3777768B2 (en) * | 1997-12-26 | 2006-05-24 | 株式会社日立製作所 | Semiconductor integrated circuit device, storage medium storing cell library, and method of designing semiconductor integrated circuit |
US6091279A (en) * | 1998-04-13 | 2000-07-18 | Lucent Technologies, Inc. | Temperature compensation of LDMOS devices |
US6051458A (en) * | 1998-05-04 | 2000-04-18 | Taiwan Semiconductor Manufacturing Company | Drain and source engineering for ESD-protection transistors |
US6348382B1 (en) * | 1999-09-09 | 2002-02-19 | Taiwan Semiconductor Manufacturing Company | Integration process to increase high voltage breakdown performance |
KR100370155B1 (en) * | 2000-05-01 | 2003-01-29 | 주식회사 하이닉스반도체 | Semiconductor Device and Method for fabricating the same |
JP3831894B2 (en) * | 2000-08-01 | 2006-10-11 | 株式会社ルネサステクノロジ | Semiconductor integrated circuit |
JP2004511084A (en) * | 2000-08-08 | 2004-04-08 | アドバンスド パワー テクノロジー,インコーポレイテッド | Power MOS device having asymmetric channel structure |
-
2000
- 2000-07-19 SE SE0002714A patent/SE518797C2/en not_active IP Right Cessation
- 2000-10-26 TW TW089122546A patent/TW486822B/en not_active IP Right Cessation
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2001
- 2001-07-09 CN CNB018129250A patent/CN1291496C/en not_active Expired - Fee Related
- 2001-07-09 EP EP01950162A patent/EP1310000A1/en not_active Withdrawn
- 2001-07-09 AU AU2001271188A patent/AU2001271188A1/en not_active Abandoned
- 2001-07-09 WO PCT/SE2001/001596 patent/WO2002007223A1/en active Application Filing
- 2001-07-18 US US09/906,697 patent/US6818951B2/en not_active Expired - Lifetime
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US4665423A (en) * | 1981-09-05 | 1987-05-12 | Nippon Telegraph And Telephone Public Corporation | MIS variable resistor |
JPS6045053A (en) * | 1983-08-22 | 1985-03-11 | Mitsubishi Electric Corp | Semiconductor device |
US5033068A (en) * | 1987-05-21 | 1991-07-16 | Kabushiki Kaisha Toshiba | Charge transfer device |
EP0905788A2 (en) * | 1997-09-29 | 1999-03-31 | Canon Kabushiki Kaisha | MOS type image sensing device |
Non-Patent Citations (1)
Title |
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PATENT ABSTRACTS OF JAPAN * |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6503786B2 (en) | 2000-08-08 | 2003-01-07 | Advanced Power Technology, Inc. | Power MOS device with asymmetrical channel structure for enhanced linear operation capability |
US6664594B2 (en) | 2000-08-08 | 2003-12-16 | Advanced Power Technology, Inc. | Power MOS device with asymmetrical channel structure for enhanced linear operation capability |
WO2002069406A2 (en) * | 2001-02-26 | 2002-09-06 | Ericsson Inc. | Am/pm non-linearity compensation in fets |
WO2002069406A3 (en) * | 2001-02-26 | 2002-10-31 | Ericsson Inc | Am/pm non-linearity compensation in fets |
WO2004097941A1 (en) | 2003-05-02 | 2004-11-11 | Koninklijke Philips Electronics N.V. | Electronic device comprising a field-effect transistor for high-frequency applications |
US8357979B2 (en) | 2003-05-02 | 2013-01-22 | Nxp B.V. | Electronic device comprising a field effect transistor for high-frequency applications |
Also Published As
Publication number | Publication date |
---|---|
SE0002714D0 (en) | 2000-07-19 |
EP1310000A1 (en) | 2003-05-14 |
CN1291496C (en) | 2006-12-20 |
US20020047140A1 (en) | 2002-04-25 |
SE0002714L (en) | 2002-01-20 |
CN1443371A (en) | 2003-09-17 |
US6818951B2 (en) | 2004-11-16 |
TW486822B (en) | 2002-05-11 |
AU2001271188A1 (en) | 2002-01-30 |
SE518797C2 (en) | 2002-11-19 |
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