WO2002006901A2 - Photoresist composition for deep uv and process thereof - Google Patents
Photoresist composition for deep uv and process thereof Download PDFInfo
- Publication number
- WO2002006901A2 WO2002006901A2 PCT/EP2001/008026 EP0108026W WO0206901A2 WO 2002006901 A2 WO2002006901 A2 WO 2002006901A2 EP 0108026 W EP0108026 W EP 0108026W WO 0206901 A2 WO0206901 A2 WO 0206901A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- photoresist
- photoresist composition
- polymer
- composition according
- norbomene
- Prior art date
Links
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 112
- 238000000034 method Methods 0.000 title claims abstract description 22
- 230000008569 process Effects 0.000 title claims abstract description 16
- 239000000203 mixture Substances 0.000 title claims description 52
- 229920000642 polymer Polymers 0.000 claims abstract description 70
- -1 alicyclic hydrocarbon olefin Chemical class 0.000 claims abstract description 25
- 239000002253 acid Substances 0.000 claims abstract description 20
- 150000001875 compounds Chemical class 0.000 claims abstract description 13
- 125000004122 cyclic group Chemical group 0.000 claims abstract description 8
- 239000012670 alkaline solution Substances 0.000 claims abstract description 6
- 229930195733 hydrocarbon Natural products 0.000 claims abstract description 4
- 238000003384 imaging method Methods 0.000 claims abstract description 4
- 239000004215 Carbon black (E152) Substances 0.000 claims abstract description 3
- 239000000758 substrate Substances 0.000 claims description 45
- 150000007942 carboxylates Chemical class 0.000 claims description 31
- 238000000576 coating method Methods 0.000 claims description 23
- 239000011248 coating agent Substances 0.000 claims description 22
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 22
- 239000000178 monomer Substances 0.000 claims description 20
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 claims description 18
- GAWIXWVDTYZWAW-UHFFFAOYSA-N C[CH]O Chemical group C[CH]O GAWIXWVDTYZWAW-UHFFFAOYSA-N 0.000 claims description 17
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 17
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims description 13
- 239000002904 solvent Substances 0.000 claims description 13
- 239000007864 aqueous solution Substances 0.000 claims description 12
- 239000004094 surface-active agent Substances 0.000 claims description 11
- VLLPVDKADBYKLM-UHFFFAOYSA-M 1,1,2,2,3,3,4,4,4-nonafluorobutane-1-sulfonate;triphenylsulfanium Chemical compound [O-]S(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F.C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 VLLPVDKADBYKLM-UHFFFAOYSA-M 0.000 claims description 10
- 239000002585 base Substances 0.000 claims description 9
- 125000000217 alkyl group Chemical group 0.000 claims description 7
- CEZCTKYAEUCICK-UHFFFAOYSA-N 2-ethylundec-7-enoic acid Chemical compound CCCC=CCCCCC(CC)C(O)=O CEZCTKYAEUCICK-UHFFFAOYSA-N 0.000 claims description 6
- 239000006117 anti-reflective coating Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 claims description 4
- HOKNTYWEKQQKGV-UHFFFAOYSA-N disulfonylmethane Chemical class O=S(=O)=C=S(=O)=O HOKNTYWEKQQKGV-UHFFFAOYSA-N 0.000 claims description 4
- 239000000654 additive Substances 0.000 claims description 3
- 239000003513 alkali Substances 0.000 claims description 3
- WLOQLWBIJZDHET-UHFFFAOYSA-N triphenylsulfonium Chemical compound C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 WLOQLWBIJZDHET-UHFFFAOYSA-N 0.000 claims description 3
- 239000012953 triphenylsulfonium Substances 0.000 claims description 3
- JGTNAGYHADQMCM-UHFFFAOYSA-M 1,1,2,2,3,3,4,4,4-nonafluorobutane-1-sulfonate Chemical compound [O-]S(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F JGTNAGYHADQMCM-UHFFFAOYSA-M 0.000 claims description 2
- ZPSJGADGUYYRKE-UHFFFAOYSA-N 2H-pyran-2-one Chemical class O=C1C=CC=CO1 ZPSJGADGUYYRKE-UHFFFAOYSA-N 0.000 claims description 2
- 150000008064 anhydrides Chemical group 0.000 claims description 2
- 230000003667 anti-reflective effect Effects 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- VJPWOHHZNHVLKD-UHFFFAOYSA-M dimethyliodanium;hydroxide Chemical group [OH-].C[I+]C VJPWOHHZNHVLKD-UHFFFAOYSA-M 0.000 claims description 2
- 239000000975 dye Substances 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 150000004866 oxadiazoles Chemical class 0.000 claims description 2
- 150000002916 oxazoles Chemical class 0.000 claims description 2
- 150000003557 thiazoles Chemical class 0.000 claims description 2
- 150000003918 triazines Chemical class 0.000 claims description 2
- ITMCEJHCFYSIIV-UHFFFAOYSA-M triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-M 0.000 claims description 2
- MDTPTXSNPBAUHX-UHFFFAOYSA-M trimethylsulfanium;hydroxide Chemical compound [OH-].C[S+](C)C MDTPTXSNPBAUHX-UHFFFAOYSA-M 0.000 claims description 2
- 230000005855 radiation Effects 0.000 abstract description 16
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 abstract description 9
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 abstract description 2
- 239000000243 solution Substances 0.000 description 47
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 40
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 38
- JANRUIBBIKVUHU-UHFFFAOYSA-N (4-methyl-2-oxooxan-4-yl) 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC1(C)CCOC(=O)C1 JANRUIBBIKVUHU-UHFFFAOYSA-N 0.000 description 25
- 238000006243 chemical reaction Methods 0.000 description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 17
- 239000010703 silicon Substances 0.000 description 17
- 239000007787 solid Substances 0.000 description 17
- 235000012431 wafers Nutrition 0.000 description 17
- 229910052710 silicon Inorganic materials 0.000 description 16
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 15
- OZAIFHULBGXAKX-VAWYXSNFSA-N AIBN Substances N#CC(C)(C)\N=N\C(C)(C)C#N OZAIFHULBGXAKX-VAWYXSNFSA-N 0.000 description 13
- 229920001577 copolymer Polymers 0.000 description 12
- 150000001925 cycloalkenes Chemical class 0.000 description 12
- 235000012239 silicon dioxide Nutrition 0.000 description 12
- 238000012360 testing method Methods 0.000 description 12
- AATKCDPVYREEEG-UHFFFAOYSA-N (2-methyl-1-adamantyl) 2-methylprop-2-enoate Chemical compound C1C(C2)CC3CC1C(C)C2(OC(=O)C(C)=C)C3 AATKCDPVYREEEG-UHFFFAOYSA-N 0.000 description 11
- 150000002148 esters Chemical class 0.000 description 11
- FRAKHUZTNLUGPB-UHFFFAOYSA-N 3,3,5-trimethyl-7-azabicyclo[3.2.1]octane Chemical compound C1C2NCC1(C)CC(C)(C)C2 FRAKHUZTNLUGPB-UHFFFAOYSA-N 0.000 description 10
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 10
- 230000035945 sensitivity Effects 0.000 description 10
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 9
- 239000010453 quartz Substances 0.000 description 9
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 8
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 6
- 238000011161 development Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 101100435268 Caenorhabditis elegans arf-1.2 gene Proteins 0.000 description 4
- FYGUSUBEMUKACF-UHFFFAOYSA-N bicyclo[2.2.1]hept-2-ene-5-carboxylic acid Chemical compound C1C2C(C(=O)O)CC1C=C2 FYGUSUBEMUKACF-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- DNIAPMSPPWPWGF-UHFFFAOYSA-N monopropylene glycol Natural products CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 125000003118 aryl group Chemical group 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical class S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 2
- 206010073306 Exposure to radiation Diseases 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 2
- ORILYTVJVMAKLC-UHFFFAOYSA-N adamantane Chemical compound C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 description 2
- 125000001931 aliphatic group Chemical group 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 239000002952 polymeric resin Substances 0.000 description 2
- 229960004063 propylene glycol Drugs 0.000 description 2
- 235000013772 propylene glycol Nutrition 0.000 description 2
- 238000009987 spinning Methods 0.000 description 2
- 125000001424 substituent group Chemical group 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- CIKZJZIPTDPBCW-UHFFFAOYSA-N tert-butyl bicyclo[2.2.1]hept-2-ene-4-carboxylate Chemical compound C1CC2C=CC1(C(=O)OC(C)(C)C)C2 CIKZJZIPTDPBCW-UHFFFAOYSA-N 0.000 description 2
- QSUJHKWXLIQKEY-UHFFFAOYSA-N (2-oxooxolan-3-yl) 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC1CCOC1=O QSUJHKWXLIQKEY-UHFFFAOYSA-N 0.000 description 1
- HFLCKUMNXPOLSN-UHFFFAOYSA-N (3,5-dihydroxy-1-adamantyl) 2-methylprop-2-enoate Chemical compound C1C(C2)CC3(O)CC2(O)CC1(OC(=O)C(=C)C)C3 HFLCKUMNXPOLSN-UHFFFAOYSA-N 0.000 description 1
- ZROFAXCQYPKWCY-UHFFFAOYSA-N (5-oxooxolan-3-yl) 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC1COC(=O)C1 ZROFAXCQYPKWCY-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- WROUWQQRXUBECT-UHFFFAOYSA-N 2-ethylacrylic acid Chemical compound CCC(=C)C(O)=O WROUWQQRXUBECT-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- LHGAUDNQZATZNL-UHFFFAOYSA-N CC(C)(C)OC(C(CC1C2)C2C2C1C1C=CC2C1)=O Chemical compound CC(C)(C)OC(C(CC1C2)C2C2C1C1C=CC2C1)=O LHGAUDNQZATZNL-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- KFWJXQDORLWKBB-UHFFFAOYSA-N OC(C(CC1C2)C2C2C1C1C=CC2C1)=O Chemical compound OC(C(CC1C2)C2C2C1C1C=CC2C1)=O KFWJXQDORLWKBB-UHFFFAOYSA-N 0.000 description 1
- CSBAKVPJZWDHHG-XAZHTEQFSA-N OCCOC1(C(C2)[C@H](C3CC4CC3)C4C2C1)C=O Chemical compound OCCOC1(C(C2)[C@H](C3CC4CC3)C4C2C1)C=O CSBAKVPJZWDHHG-XAZHTEQFSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000002318 adhesion promoter Substances 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229940072049 amyl acetate Drugs 0.000 description 1
- PGMYKACGEOXYJE-UHFFFAOYSA-N anhydrous amyl acetate Natural products CCCCCOC(C)=O PGMYKACGEOXYJE-UHFFFAOYSA-N 0.000 description 1
- 150000001491 aromatic compounds Chemical class 0.000 description 1
- 229940043232 butyl acetate Drugs 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- UOCJDOLVGGIYIQ-PBFPGSCMSA-N cefatrizine Chemical group S([C@@H]1[C@@H](C(N1C=1C(O)=O)=O)NC(=O)[C@H](N)C=2C=CC(O)=CC=2)CC=1CSC=1C=NNN=1 UOCJDOLVGGIYIQ-PBFPGSCMSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000012954 diazonium Substances 0.000 description 1
- 150000001989 diazonium salts Chemical class 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003623 enhancer Substances 0.000 description 1
- BHXIWUJLHYHGSJ-UHFFFAOYSA-N ethyl 3-ethoxypropanoate Chemical compound CCOCCC(=O)OCC BHXIWUJLHYHGSJ-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- MNWFXJYAOYHMED-UHFFFAOYSA-M heptanoate Chemical compound CCCCCCC([O-])=O MNWFXJYAOYHMED-UHFFFAOYSA-M 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical class I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- MGFYSGNNHQQTJW-UHFFFAOYSA-N iodonium Chemical compound [IH2+] MGFYSGNNHQQTJW-UHFFFAOYSA-N 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000002848 norbornenes Chemical class 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000010526 radical polymerization reaction Methods 0.000 description 1
- 238000006462 rearrangement reaction Methods 0.000 description 1
- 239000013557 residual solvent Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/115—Cationic or anionic
Definitions
- the invention also relates to a process of imaging the novel positive photoresist composition comprising the steps of a) coating a substrate with the novel photoresist composition, b) baking the substrate to substantially remove the solvent, c) imagewise irradiating the photoresist film, d) baking the photoresist, and e) developing the irradiated film using an alkali developer.
- the invention further relates to a process of making a polymer under pressure.
- the cyclo olefin is incorporated into the backbone of the polymer and may be any substituted or unsubstituted multicyclic hydrocarbon, containing an unsaturated bond.
- the polymer may be synthesized from one or more cyclo olefin monomers having an unsaturated bond.
- the cyclo olefin monomers may be substituted or unsubstituted norbornene, or tetracyclododecne.
- the substituents on the cyclo olefin may be aliphatic or cycloaliphatic alkyls, esters, acids, hydroxyl, nitrile or alkyl derivatives. Examples of cyclo olefin monomers, without limitation, are:
- Example 2 The synthesis procedure of Example 1 was repeated using 15.89g of BNC, 4.26g of HNC, 1 .61 g of NC, 1 1.60g MLMA and 13.71 g of MAdMA, and 22.93g of MA.
- the polymer was isolated as described in Example 1. Test results for the polymer are shown in Tablel .
- a copolymer is synthesized from 14.88g of t-butyl norbomene carboxylate (BNC), 3.99g of hydroxy ethyl norbomene carboxylate (HNC), 1.51g of norbomene carboxylic acid(NC), 21.72g of mevaloniclactone methacrylate (MLMA) and 25.62g of 2-methyladamantyl methacrylate (MAdMA) and 32.24g of maleic anhydride(MA) in presence of 2 weight% of AIBN in THF at 50% solid.
- the reaction was carried out in a 500 ml glass flask for 8 hours and the polymer was isolated twice from diethyl ether (1/10 V/V ratio). Test results for the polymer are shown in Table 1.
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Polymerisation Methods In General (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020037000610A KR100732929B1 (en) | 2000-07-19 | 2001-07-11 | Photoresist composition for deep uv and process thereof |
DE60129024T DE60129024T2 (en) | 2000-07-19 | 2001-07-11 | PHOTORESISTIC COMPOSITION SUITABLE FOR DEPOSITING WITH DEEP UV RADIATION AND THIS USE OF THE PICTURE PRODUCTION PROCESS |
JP2002512748A JP2004504635A (en) | 2000-07-19 | 2001-07-11 | Photoresist composition for deep ultraviolet light and method for producing the same |
EP01967154A EP1311908B1 (en) | 2000-07-19 | 2001-07-11 | Photoresist composition for deep uv and process thereof |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/619,336 | 2000-07-19 | ||
US09/619,336 US6447980B1 (en) | 2000-07-19 | 2000-07-19 | Photoresist composition for deep UV and process thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2002006901A2 true WO2002006901A2 (en) | 2002-01-24 |
WO2002006901A3 WO2002006901A3 (en) | 2002-08-22 |
Family
ID=24481461
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2001/008026 WO2002006901A2 (en) | 2000-07-19 | 2001-07-11 | Photoresist composition for deep uv and process thereof |
Country Status (10)
Country | Link |
---|---|
US (1) | US6447980B1 (en) |
EP (1) | EP1311908B1 (en) |
JP (1) | JP2004504635A (en) |
KR (1) | KR100732929B1 (en) |
CN (1) | CN1230715C (en) |
AT (1) | ATE365340T1 (en) |
DE (1) | DE60129024T2 (en) |
MY (1) | MY124931A (en) |
TW (1) | TW591323B (en) |
WO (1) | WO2002006901A2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7399815B2 (en) | 2002-09-27 | 2008-07-15 | Central Glass Company, Limited | Fluorine-containing allyl ether compounds, their copolymers, and resist compositions and anti-reflection film materials using such copolymers |
CN1685285B (en) * | 2002-09-30 | 2012-11-21 | 国际商业机器公司 | 193nm resist |
WO2016124493A1 (en) | 2015-02-02 | 2016-08-11 | Basf Se | Latent acids and their use |
Families Citing this family (89)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100382960B1 (en) * | 1998-07-03 | 2003-05-09 | 닛뽕덴끼 가부시끼가이샤 | (meth)acrylate derivatives bearing lactone structure, polymers, photoresist compositions and process of forming patterns with the same |
US6517994B2 (en) * | 2001-04-10 | 2003-02-11 | Shin-Etsu Chemical Co., Ltd. | Lactone ring-containing (meth)acrylate and polymer thereof for photoresist composition |
US6610465B2 (en) * | 2001-04-11 | 2003-08-26 | Clariant Finance (Bvi) Limited | Process for producing film forming resins for photoresist compositions |
US7070914B2 (en) * | 2002-01-09 | 2006-07-04 | Az Electronic Materials Usa Corp. | Process for producing an image using a first minimum bottom antireflective coating composition |
US20030215736A1 (en) * | 2002-01-09 | 2003-11-20 | Oberlander Joseph E. | Negative-working photoimageable bottom antireflective coating |
DE10246546B4 (en) * | 2002-09-30 | 2006-10-05 | Infineon Technologies Ag | Use of a resist system and lithographic process for the production of semiconductor devices |
JP4235466B2 (en) * | 2003-02-24 | 2009-03-11 | Azエレクトロニックマテリアルズ株式会社 | Water-soluble resin composition, pattern forming method, and resist pattern inspection method |
JP4012480B2 (en) * | 2003-03-28 | 2007-11-21 | Azエレクトロニックマテリアルズ株式会社 | Fine pattern formation aid and process for producing the same |
US7037559B2 (en) * | 2003-05-01 | 2006-05-02 | International Business Machines Corporation | Immersion plating and plated structures |
US7189491B2 (en) * | 2003-12-11 | 2007-03-13 | Az Electronic Materials Usa Corp. | Photoresist composition for deep UV and process thereof |
US7033728B2 (en) * | 2003-12-29 | 2006-04-25 | Az Electronic Materials Usa Corp. | Photoresist composition |
US7473512B2 (en) * | 2004-03-09 | 2009-01-06 | Az Electronic Materials Usa Corp. | Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof |
US20050214674A1 (en) | 2004-03-25 | 2005-09-29 | Yu Sui | Positive-working photoimageable bottom antireflective coating |
US8083853B2 (en) | 2004-05-12 | 2011-12-27 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser hole design |
US7846637B2 (en) * | 2004-04-27 | 2010-12-07 | Tokyo Ohka Kogyo Co., Ltd. | Material for forming resist protective film for use in liquid immersion lithography process and method for forming resist pattern using the protective film |
US8328939B2 (en) | 2004-05-12 | 2012-12-11 | Applied Materials, Inc. | Diffuser plate with slit valve compensation |
KR100599076B1 (en) * | 2004-05-31 | 2006-07-13 | 삼성전자주식회사 | Photoresist composition and method for forming pattern using the same |
JP4368267B2 (en) * | 2004-07-30 | 2009-11-18 | 東京応化工業株式会社 | Resist protective film forming material and resist pattern forming method using the same |
US20060054090A1 (en) * | 2004-09-15 | 2006-03-16 | Applied Materials, Inc. | PECVD susceptor support construction |
US7429410B2 (en) * | 2004-09-20 | 2008-09-30 | Applied Materials, Inc. | Diffuser gravity support |
US7595141B2 (en) * | 2004-10-26 | 2009-09-29 | Az Electronic Materials Usa Corp. | Composition for coating over a photoresist pattern |
US7537879B2 (en) | 2004-11-22 | 2009-05-26 | Az Electronic Materials Usa Corp. | Photoresist composition for deep UV and process thereof |
JP4498939B2 (en) * | 2005-02-01 | 2010-07-07 | 東京応化工業株式会社 | Positive resist composition and resist pattern forming method |
JP5002137B2 (en) * | 2005-07-28 | 2012-08-15 | 富士フイルム株式会社 | Chemically amplified resist composition and method for producing the same |
JP4699140B2 (en) * | 2005-08-29 | 2011-06-08 | 東京応化工業株式会社 | Pattern formation method |
US7704670B2 (en) * | 2006-06-22 | 2010-04-27 | Az Electronic Materials Usa Corp. | High silicon-content thin film thermosets |
US20070298349A1 (en) * | 2006-06-22 | 2007-12-27 | Ruzhi Zhang | Antireflective Coating Compositions Comprising Siloxane Polymer |
US7638262B2 (en) | 2006-08-10 | 2009-12-29 | Az Electronic Materials Usa Corp. | Antireflective composition for photoresists |
US7416834B2 (en) * | 2006-09-27 | 2008-08-26 | Az Electronic Materials Usa Corp. | Antireflective coating compositions |
US7666575B2 (en) * | 2006-10-18 | 2010-02-23 | Az Electronic Materials Usa Corp | Antireflective coating compositions |
US20080171270A1 (en) * | 2007-01-16 | 2008-07-17 | Munirathna Padmanaban | Polymers Useful in Photoresist Compositions and Compositions Thereof |
US7824844B2 (en) * | 2007-01-19 | 2010-11-02 | Az Electronic Materials Usa Corp. | Solvent mixtures for antireflective coating compositions for photoresists |
US8026040B2 (en) | 2007-02-20 | 2011-09-27 | Az Electronic Materials Usa Corp. | Silicone coating composition |
US7736837B2 (en) * | 2007-02-20 | 2010-06-15 | Az Electronic Materials Usa Corp. | Antireflective coating composition based on silicon polymer |
KR101523393B1 (en) | 2007-02-27 | 2015-05-27 | 이엠디 퍼포먼스 머티리얼스 코프. | Silicon-based antireflective coating compositions |
US7923200B2 (en) * | 2007-04-09 | 2011-04-12 | Az Electronic Materials Usa Corp. | Composition for coating over a photoresist pattern comprising a lactam |
JP5069494B2 (en) * | 2007-05-01 | 2012-11-07 | AzエレクトロニックマテリアルズIp株式会社 | Water-soluble resin composition for forming fine pattern and fine pattern forming method using the same |
US8017296B2 (en) * | 2007-05-22 | 2011-09-13 | Az Electronic Materials Usa Corp. | Antireflective coating composition comprising fused aromatic rings |
US20080317973A1 (en) * | 2007-06-22 | 2008-12-25 | White John M | Diffuser support |
US20090035704A1 (en) * | 2007-08-03 | 2009-02-05 | Hong Zhuang | Underlayer Coating Composition Based on a Crosslinkable Polymer |
US8252503B2 (en) * | 2007-08-24 | 2012-08-28 | Az Electronic Materials Usa Corp. | Photoresist compositions |
US8088548B2 (en) * | 2007-10-23 | 2012-01-03 | Az Electronic Materials Usa Corp. | Bottom antireflective coating compositions |
US8039201B2 (en) * | 2007-11-21 | 2011-10-18 | Az Electronic Materials Usa Corp. | Antireflective coating composition and process thereof |
US20090162800A1 (en) * | 2007-12-20 | 2009-06-25 | David Abdallah | Process for Imaging a Photoresist Coated over an Antireflective Coating |
TWI452419B (en) * | 2008-01-28 | 2014-09-11 | Az Electronic Mat Ip Japan Kk | Fine pattern mask, process for producing the same, and process for forming fine pattern by using the same |
WO2009104685A1 (en) * | 2008-02-21 | 2009-08-27 | 日産化学工業株式会社 | Composition for forming resist underlayer film and method for forming resist pattern using the same |
US7989144B2 (en) * | 2008-04-01 | 2011-08-02 | Az Electronic Materials Usa Corp | Antireflective coating composition |
US20090253080A1 (en) * | 2008-04-02 | 2009-10-08 | Dammel Ralph R | Photoresist Image-Forming Process Using Double Patterning |
US20090253081A1 (en) * | 2008-04-02 | 2009-10-08 | David Abdallah | Process for Shrinking Dimensions Between Photoresist Pattern Comprising a Pattern Hardening Step |
US8097082B2 (en) * | 2008-04-28 | 2012-01-17 | Applied Materials, Inc. | Nonplanar faceplate for a plasma processing chamber |
KR101039310B1 (en) * | 2008-05-02 | 2011-06-08 | 한국수자원공사 | Hybrid Active Power Filter |
US7745077B2 (en) * | 2008-06-18 | 2010-06-29 | Az Electronic Materials Usa Corp. | Composition for coating over a photoresist pattern |
US8221965B2 (en) * | 2008-07-08 | 2012-07-17 | Az Electronic Materials Usa Corp. | Antireflective coating compositions |
US20100015550A1 (en) * | 2008-07-17 | 2010-01-21 | Weihong Liu | Dual damascene via filling composition |
US20100040838A1 (en) * | 2008-08-15 | 2010-02-18 | Abdallah David J | Hardmask Process for Forming a Reverse Tone Image |
US8455176B2 (en) * | 2008-11-12 | 2013-06-04 | Az Electronic Materials Usa Corp. | Coating composition |
US20100119980A1 (en) * | 2008-11-13 | 2010-05-13 | Rahman M Dalil | Antireflective Coating Composition Comprising Fused Aromatic Rings |
US20100119979A1 (en) * | 2008-11-13 | 2010-05-13 | Rahman M Dalil | Antireflective Coating Composition Comprising Fused Aromatic Rings |
US8084186B2 (en) * | 2009-02-10 | 2011-12-27 | Az Electronic Materials Usa Corp. | Hardmask process for forming a reverse tone image using polysilazane |
US20100316949A1 (en) * | 2009-06-10 | 2010-12-16 | Rahman M Dalil | Spin On Organic Antireflective Coating Composition Comprising Polymer with Fused Aromatic Rings |
US8632948B2 (en) * | 2009-09-30 | 2014-01-21 | Az Electronic Materials Usa Corp. | Positive-working photoimageable bottom antireflective coating |
US8551686B2 (en) | 2009-10-30 | 2013-10-08 | Az Electronic Materials Usa Corp. | Antireflective composition for photoresists |
US8486609B2 (en) * | 2009-12-23 | 2013-07-16 | Az Electronic Materials Usa Corp. | Antireflective coating composition and process thereof |
US8445181B2 (en) | 2010-06-03 | 2013-05-21 | Az Electronic Materials Usa Corp. | Antireflective coating composition and process thereof |
US8852848B2 (en) | 2010-07-28 | 2014-10-07 | Z Electronic Materials USA Corp. | Composition for coating over a photoresist pattern |
US20120122029A1 (en) | 2010-11-11 | 2012-05-17 | Takanori Kudo | Underlayer Developable Coating Compositions and Processes Thereof |
US8465902B2 (en) | 2011-02-08 | 2013-06-18 | Az Electronic Materials Usa Corp. | Underlayer coating composition and processes thereof |
US8906590B2 (en) | 2011-03-30 | 2014-12-09 | Az Electronic Materials Usa Corp. | Antireflective coating composition and process thereof |
US8623589B2 (en) | 2011-06-06 | 2014-01-07 | Az Electronic Materials Usa Corp. | Bottom antireflective coating compositions and processes thereof |
US8568958B2 (en) | 2011-06-21 | 2013-10-29 | Az Electronic Materials Usa Corp. | Underlayer composition and process thereof |
JP5889568B2 (en) | 2011-08-11 | 2016-03-22 | メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH | Composition for forming tungsten oxide film and method for producing tungsten oxide film using the same |
US20130108956A1 (en) | 2011-11-01 | 2013-05-02 | Az Electronic Materials Usa Corp. | Nanocomposite positive photosensitive composition and use thereof |
KR101633657B1 (en) * | 2011-12-28 | 2016-06-28 | 금호석유화학 주식회사 | Additive for resist and resist composition comprising same |
US8906592B2 (en) | 2012-08-01 | 2014-12-09 | Az Electronic Materials (Luxembourg) S.A.R.L. | Antireflective coating composition and process thereof |
US9315636B2 (en) | 2012-12-07 | 2016-04-19 | Az Electronic Materials (Luxembourg) S.A.R.L. | Stable metal compounds, their compositions and methods |
KR101273667B1 (en) * | 2012-12-14 | 2013-06-17 | 주식회사 폴리사이언텍 | High-heat-resistant transparent cyclic olefin copolymers with excellent flexibility and flexible substrates produced therefrom |
US9291909B2 (en) | 2013-05-17 | 2016-03-22 | Az Electronic Materials (Luxembourg) S.A.R.L. | Composition comprising a polymeric thermal acid generator and processes thereof |
US9152051B2 (en) | 2013-06-13 | 2015-10-06 | Az Electronics Materials (Luxembourg) S.A.R.L. | Antireflective coating composition and process thereof |
US9201305B2 (en) | 2013-06-28 | 2015-12-01 | Az Electronic Materials (Luxembourg) S.A.R.L. | Spin-on compositions of soluble metal oxide carboxylates and methods of their use |
US9296922B2 (en) | 2013-08-30 | 2016-03-29 | Az Electronic Materials (Luxembourg) S.A.R.L. | Stable metal compounds as hardmasks and filling materials, their compositions and methods of use |
US9409793B2 (en) | 2014-01-14 | 2016-08-09 | Az Electronic Materials (Luxembourg) S.A.R.L. | Spin coatable metallic hard mask compositions and processes thereof |
US9418836B2 (en) | 2014-01-14 | 2016-08-16 | Az Electronic Materials (Luxembourg) S.A.R.L. | Polyoxometalate and heteropolyoxometalate compositions and methods for their use |
US9274426B2 (en) | 2014-04-29 | 2016-03-01 | Az Electronic Materials (Luxembourg) S.A.R.L. | Antireflective coating compositions and processes thereof |
US9499698B2 (en) | 2015-02-11 | 2016-11-22 | Az Electronic Materials (Luxembourg)S.A.R.L. | Metal hardmask composition and processes for forming fine patterns on semiconductor substrates |
US10241409B2 (en) | 2015-12-22 | 2019-03-26 | AZ Electronic Materials (Luxembourg) S.à.r.l. | Materials containing metal oxides, processes for making same, and processes for using same |
TWI786656B (en) | 2016-12-21 | 2022-12-11 | 德商馬克專利公司 | Process of coating a hard mask composition on a silicon substrate |
WO2019048393A1 (en) | 2017-09-06 | 2019-03-14 | AZ Electronic Materials (Luxembourg) S.à.r.l. | Spin-on inorganic oxide containing composition useful as hard masks and filling materials with improved thermal stability |
CN117295693A (en) | 2021-05-06 | 2023-12-26 | 默克专利股份有限公司 | Spin-on metal-organic formulations |
CN114085311B (en) * | 2021-12-30 | 2023-03-14 | 宁波南大光电材料有限公司 | Method for preparing high-purity photoresist resin |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1085379A1 (en) * | 1999-09-17 | 2001-03-21 | JSR Corporation | Radiation-sensitive resin composition |
EP1172694A1 (en) * | 2000-02-01 | 2002-01-16 | Daicel Chemical Industries, Ltd. | Polymeric compound for photoresist and resin composition for photoresist |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4491628A (en) | 1982-08-23 | 1985-01-01 | International Business Machines Corporation | Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone |
EP0440374B1 (en) | 1990-01-30 | 1997-04-16 | Wako Pure Chemical Industries Ltd | Chemical amplified resist material |
US5843624A (en) | 1996-03-08 | 1998-12-01 | Lucent Technologies Inc. | Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material |
KR100265597B1 (en) | 1996-12-30 | 2000-09-15 | 김영환 | Arf photosensitive resin and manufacturing method thereof |
TW457277B (en) * | 1998-05-11 | 2001-10-01 | Shinetsu Chemical Co | Ester compounds, polymers, resist composition and patterning process |
KR100301065B1 (en) * | 1999-08-16 | 2001-09-22 | 윤종용 | Photosensitive polymer having cyclic backbone and resist composition comprising the same |
JP4123654B2 (en) * | 1999-10-13 | 2008-07-23 | Jsr株式会社 | Radiation sensitive resin composition |
-
2000
- 2000-07-19 US US09/619,336 patent/US6447980B1/en not_active Expired - Fee Related
-
2001
- 2001-06-12 TW TW090114154A patent/TW591323B/en not_active IP Right Cessation
- 2001-07-11 EP EP01967154A patent/EP1311908B1/en not_active Expired - Lifetime
- 2001-07-11 JP JP2002512748A patent/JP2004504635A/en active Pending
- 2001-07-11 DE DE60129024T patent/DE60129024T2/en not_active Expired - Fee Related
- 2001-07-11 AT AT01967154T patent/ATE365340T1/en not_active IP Right Cessation
- 2001-07-11 WO PCT/EP2001/008026 patent/WO2002006901A2/en active IP Right Grant
- 2001-07-11 KR KR1020037000610A patent/KR100732929B1/en not_active IP Right Cessation
- 2001-07-11 CN CNB018129749A patent/CN1230715C/en not_active Expired - Fee Related
- 2001-07-19 MY MYPI20013430 patent/MY124931A/en unknown
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1085379A1 (en) * | 1999-09-17 | 2001-03-21 | JSR Corporation | Radiation-sensitive resin composition |
EP1172694A1 (en) * | 2000-02-01 | 2002-01-16 | Daicel Chemical Industries, Ltd. | Polymeric compound for photoresist and resin composition for photoresist |
Non-Patent Citations (2)
Title |
---|
PARK, JOO-HYEON ET AL.: "ArF photoresist system using alicyclic polymer" PROCEEDINGS OF THE SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING, vol. 3049, no. 1, 1997, pages 485-491, XP001023093 USA * |
UETANI Y ; FUJISHIMA H ; MIYA Y ; TAKEMOTO I: "Standard developer available ArF resist and performance" PROCEEDINGS OF THE SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING, vol. 3333, no. 1, 25 February 1998 (1998-02-25), pages 546-553, XP002193304 USA * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7399815B2 (en) | 2002-09-27 | 2008-07-15 | Central Glass Company, Limited | Fluorine-containing allyl ether compounds, their copolymers, and resist compositions and anti-reflection film materials using such copolymers |
CN1685285B (en) * | 2002-09-30 | 2012-11-21 | 国际商业机器公司 | 193nm resist |
WO2016124493A1 (en) | 2015-02-02 | 2016-08-11 | Basf Se | Latent acids and their use |
US9994538B2 (en) | 2015-02-02 | 2018-06-12 | Basf Se | Latent acids and their use |
Also Published As
Publication number | Publication date |
---|---|
CN1230715C (en) | 2005-12-07 |
DE60129024T2 (en) | 2008-02-21 |
KR100732929B1 (en) | 2007-06-29 |
WO2002006901A3 (en) | 2002-08-22 |
KR20030079908A (en) | 2003-10-10 |
EP1311908A2 (en) | 2003-05-21 |
EP1311908B1 (en) | 2007-06-20 |
US6447980B1 (en) | 2002-09-10 |
ATE365340T1 (en) | 2007-07-15 |
DE60129024D1 (en) | 2007-08-02 |
MY124931A (en) | 2006-07-31 |
CN1443315A (en) | 2003-09-17 |
JP2004504635A (en) | 2004-02-12 |
TW591323B (en) | 2004-06-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6447980B1 (en) | Photoresist composition for deep UV and process thereof | |
US6723488B2 (en) | Photoresist composition for deep UV radiation containing an additive | |
US6365322B1 (en) | Photoresist composition for deep UV radiation | |
US6991888B2 (en) | Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds | |
US6537726B2 (en) | Chemically amplified positive resist composition | |
US6737215B2 (en) | Photoresist composition for deep ultraviolet lithography | |
US5962184A (en) | Photoresist composition comprising a copolymer of a hydroxystyrene and a (meth)acrylate substituted with an alicyclic ester substituent | |
US6800416B2 (en) | Negative deep ultraviolet photoresist | |
WO2006054173A1 (en) | Photoresist composition for deep uv and process thereof | |
US7033728B2 (en) | Photoresist composition | |
EP1392745A1 (en) | Polymer suitable for photoresist compositions | |
US7189491B2 (en) | Photoresist composition for deep UV and process thereof | |
EP0735422B1 (en) | Radiation-sensitive composition containing plasticizer | |
EP1631863A2 (en) | Photoresist composition for deep uv and imaging process thereof | |
JPH09222732A (en) | Positive type radiation sensitive composition | |
JP2001042530A (en) | Positive type radiation sensitive resin composition |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): CN JP KR SG |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
AK | Designated states |
Kind code of ref document: A3 Designated state(s): CN JP KR SG |
|
AL | Designated countries for regional patents |
Kind code of ref document: A3 Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2001967154 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020037000610 Country of ref document: KR |
|
WWE | Wipo information: entry into national phase |
Ref document number: 018129749 Country of ref document: CN |
|
WWP | Wipo information: published in national office |
Ref document number: 2001967154 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 1020037000610 Country of ref document: KR |
|
WWG | Wipo information: grant in national office |
Ref document number: 2001967154 Country of ref document: EP |