WO2002004695A3 - Thin film processing system - Google Patents

Thin film processing system Download PDF

Info

Publication number
WO2002004695A3
WO2002004695A3 PCT/US2001/021517 US0121517W WO0204695A3 WO 2002004695 A3 WO2002004695 A3 WO 2002004695A3 US 0121517 W US0121517 W US 0121517W WO 0204695 A3 WO0204695 A3 WO 0204695A3
Authority
WO
WIPO (PCT)
Prior art keywords
deposition
shield
aperture
thin film
processing system
Prior art date
Application number
PCT/US2001/021517
Other languages
French (fr)
Other versions
WO2002004695A2 (en
Inventor
Piero Sferlazzo
Chunghsin Lee
Original Assignee
Opnetics Corp
Piero Sferlazzo
Chunghsin Lee
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/840,394 external-priority patent/US6669824B2/en
Application filed by Opnetics Corp, Piero Sferlazzo, Chunghsin Lee filed Critical Opnetics Corp
Priority to JP2002509548A priority Critical patent/JP2004533538A/en
Priority to AU2001273260A priority patent/AU2001273260A1/en
Priority to EP01952519A priority patent/EP1301651A2/en
Publication of WO2002004695A2 publication Critical patent/WO2002004695A2/en
Publication of WO2002004695A3 publication Critical patent/WO2002004695A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C23C14/044—Coating on selected surface areas, e.g. using masks using masks using masks to redistribute rather than totally prevent coating, e.g. producing thickness gradient
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/46—Sputtering by ion beam produced by an external ion source

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The deposition system (100) includes a deposition source (114) that generates deposition flux (114) comprising neutral atoms and molecules. A shield (102) defining an aperture (103) is positioned in the path of the deposition flux. The shield passes the deposition flux though the aperture and substantially blocks the deposition flux from propagating past the shield everywhere else. A substrate support (116) is positioned adjacent to the shield. A dual-scanning system (122) scans the substrate support relative to the aperture with a first and a second motion.
PCT/US2001/021517 2000-07-10 2001-07-09 Thin film processing system WO2002004695A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2002509548A JP2004533538A (en) 2000-07-10 2001-07-09 Double scan thin film processing system
AU2001273260A AU2001273260A1 (en) 2000-07-10 2001-07-09 Dual-scan thin film processing system
EP01952519A EP1301651A2 (en) 2000-07-10 2001-07-09 Thin film processing system

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US21704900P 2000-07-10 2000-07-10
US60/217,049 2000-07-10
US09/840,394 US6669824B2 (en) 2000-07-10 2001-04-23 Dual-scan thin film processing system
US09/840,394 2001-04-23

Publications (2)

Publication Number Publication Date
WO2002004695A2 WO2002004695A2 (en) 2002-01-17
WO2002004695A3 true WO2002004695A3 (en) 2002-06-20

Family

ID=26911563

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/021517 WO2002004695A2 (en) 2000-07-10 2001-07-09 Thin film processing system

Country Status (5)

Country Link
EP (1) EP1301651A2 (en)
JP (1) JP2004533538A (en)
CN (1) CN1257307C (en)
AU (1) AU2001273260A1 (en)
WO (1) WO2002004695A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104378904B (en) * 2014-11-20 2017-01-18 大连理工大学 Radio frequency plasma chamber meeting mechanism that negative hydrogen ions are generated through plasmas
US9988711B2 (en) * 2015-05-14 2018-06-05 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for multilayer deposition
CN106987817B (en) * 2017-04-17 2019-03-29 同济大学 A method of line style magnetic controlled sputtering target rifle is improved in spill cylinder base coated film quality
JP2020023739A (en) * 2018-08-08 2020-02-13 株式会社アルバック Ion beam sputtering device and ion beam sputtering method
JP2020026539A (en) * 2018-08-09 2020-02-20 株式会社アルバック Ion beam sputtering device and ion beam sputtering method
CN114703455B (en) * 2022-02-21 2023-11-28 松山湖材料实验室 Method and device for preparing combined film

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5356673A (en) * 1991-03-18 1994-10-18 Jet Process Corporation Evaporation system and method for gas jet deposition of thin film materials
US5536324A (en) * 1993-12-10 1996-07-16 Vacuum Metallurgical Co., Ltd. Ultra fine particle gas deposition apparatus
US5571332A (en) * 1995-02-10 1996-11-05 Jet Process Corporation Electron jet vapor deposition system
DE19513918C1 (en) * 1995-04-12 1996-11-07 Fraunhofer Ges Forschung Method of coating submicrometer structures for highly integrated circuits

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2959023B2 (en) * 1990-02-23 1999-10-06 日本電気株式会社 Ion beam sputtering equipment
JP3074712B2 (en) * 1990-08-31 2000-08-07 日本電気株式会社 Method for producing silver single crystal thin film and metal artificial lattice
JPH05170448A (en) * 1991-12-26 1993-07-09 Matsushita Electric Ind Co Ltd Production of thin ceramic film
JPH1026698A (en) * 1996-07-12 1998-01-27 Nikon Corp Device for forming thin film under vacuum and method for manufacturing reflector
JP3861329B2 (en) * 1996-07-17 2006-12-20 株式会社ニコン Vacuum thin film forming apparatus and reflector manufacturing method
US6086727A (en) * 1998-06-05 2000-07-11 International Business Machines Corporation Method and apparatus to improve the properties of ion beam deposited films in an ion beam sputtering system
JP3081844B2 (en) * 1998-08-26 2000-08-28 日本電信電話株式会社 Optical filter manufacturing method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5356673A (en) * 1991-03-18 1994-10-18 Jet Process Corporation Evaporation system and method for gas jet deposition of thin film materials
US5536324A (en) * 1993-12-10 1996-07-16 Vacuum Metallurgical Co., Ltd. Ultra fine particle gas deposition apparatus
US5571332A (en) * 1995-02-10 1996-11-05 Jet Process Corporation Electron jet vapor deposition system
DE19513918C1 (en) * 1995-04-12 1996-11-07 Fraunhofer Ges Forschung Method of coating submicrometer structures for highly integrated circuits

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
ARNOLD S M ET AL: "ION BEAM SPUTTER DEPOSITION OF LOW LOSS AL2O3 FILMS FOR INTEGRATED OPTICS", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 165, no. 1, 15 November 1988 (1988-11-15), pages 1 - 9, XP000112295, ISSN: 0040-6090 *
BRICAULT R J ET AL: "DEPOSITION OF BORON NITRIDE THIN FILMS BY ION BEAM ASSISTED DEPOSITION", NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, SECTION - B: BEAM INTERACTIONS WITH MATERIALS AND ATOMS, NORTH-HOLLAND PUBLISHING COMPANY. AMSTERDAM, NL, vol. B21, no. 2 - 4, 2 March 1987 (1987-03-02), pages 586 - 587, XP000111333, ISSN: 0168-583X *

Also Published As

Publication number Publication date
CN1447865A (en) 2003-10-08
WO2002004695A2 (en) 2002-01-17
EP1301651A2 (en) 2003-04-16
JP2004533538A (en) 2004-11-04
CN1257307C (en) 2006-05-24
AU2001273260A1 (en) 2002-01-21

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