WO2002000358A1 - Deposition de couches sur particules supraconductrices par pulverisation ou evaporation - Google Patents

Deposition de couches sur particules supraconductrices par pulverisation ou evaporation Download PDF

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Publication number
WO2002000358A1
WO2002000358A1 PCT/US2001/041145 US0141145W WO0200358A1 WO 2002000358 A1 WO2002000358 A1 WO 2002000358A1 US 0141145 W US0141145 W US 0141145W WO 0200358 A1 WO0200358 A1 WO 0200358A1
Authority
WO
WIPO (PCT)
Prior art keywords
particles
superconductor
coating
sputter target
chamber
Prior art date
Application number
PCT/US2001/041145
Other languages
English (en)
Inventor
Matthew J. Holcomb
Original Assignee
Nove' Technologies, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nove' Technologies, Inc. filed Critical Nove' Technologies, Inc.
Priority to AU2001273638A priority Critical patent/AU2001273638A1/en
Publication of WO2002000358A1 publication Critical patent/WO2002000358A1/fr
Priority to US10/328,961 priority patent/US20030181337A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/223—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating specially adapted for coating particles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2/00—Processes or devices for granulating materials, e.g. fertilisers in general; Rendering particulate materials free flowing in general, e.g. making them hydrophobic
    • B01J2/006—Coating of the granules without description of the process or the device by which the granules are obtained
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2/00—Processes or devices for granulating materials, e.g. fertilisers in general; Rendering particulate materials free flowing in general, e.g. making them hydrophobic
    • B01J2/18—Processes or devices for granulating materials, e.g. fertilisers in general; Rendering particulate materials free flowing in general, e.g. making them hydrophobic using a vibrating apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0661—Processes performed after copper oxide formation, e.g. patterning
    • H10N60/0716—Passivating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0801—Manufacture or treatment of filaments or composite wires

Definitions

  • This invention relates to a method and apparatus for producing a
  • a plurality of superconductor particles are formed being of a first material which is
  • a coating layer is formed on each superconductor particle, the coating layer being of a second material selected to be substantially non-reactive with the first material.
  • the coated particles are then mixed with a third material to form a composite wherein the third material is in proximity to the first material but
  • the third material is selected to be relatively
  • the second material protects the third material from oxidation by the first
  • the second material is selected and is sufficiently thin to allow for the
  • superconductor particles are formed, the superconductor particles being of a first
  • Each partially coated particle is
  • the further coated particles may be located in proximity to a third
  • the third material may be selected to be
  • the third material is in proximity to the first material.
  • the second material is selected to be substantially non-reactive with the first
  • the invention also provides a method for producing a superconductive
  • particles of a first material being relatively brittle and being selected to be in a
  • introducing gas particles into the chamber creating a voltage on a sputter target, the sputter target being located in the chamber and being made of
  • particle is coated with a layer to form a plurality of coated particles.
  • superconductor property composition comprising forming a
  • the invention also provides a method for producing a superconductor property aggregate comprising forming a plurality of superconductor particles
  • the invention also provides a method for producing a superconductive
  • particles of a first material being relatively brittle and being selected to be in a
  • each superconductor particle to form a plurality of coated particles, the coating
  • the invention also provides apparatus for coating a plurality of
  • superconductor particles comprising a chamber, a container, a source of gas
  • the container contains a sputter target, a voltage source, and a stirring device.
  • the source of gas particles introduces gas particles into the chamber.
  • the sputter target is located in the chamber.
  • the voltage source is coupled to the sputter target so as to create a voltage on the sputter target.
  • the gas particles are ionized and then attracted to the sputter target due to the voltage and collide with the sputter target so that coating particles are released from the sputter
  • the coating particles have movement directed towards the
  • the stirring device is connected to the
  • the invention also provides apparatus for coating a plurality of
  • superconductor particles comprising a chamber, a higher container, a lower
  • the higher container is for holding
  • the source of coating particles are of a
  • the coating particles are directed from the source to the
  • each superconductor particle with a coating layer to form a plurality of
  • the invention also provides apparatus for coating a plurality of
  • superconductor particles comprising a chamber, a container, a heating element, a
  • the voltage source and a material within the chamber.
  • a container is located within the chamber for holding the superconductor particles.
  • the heating element is located within the chamber.
  • the voltage source is coupled to the heating element so that the heating element heats up when the voltage source is
  • the material is located within the chamber and is being heated by the
  • heating element heating of the material causing evaporation thereof into coating
  • the coating particles form a layer on the superconductor particles.
  • material may be selected from the group consisting of silver and its alloys,
  • niobium and its alloys niobium and its alloys, a niobium titanium alloy, lead and its alloys, a lead
  • bismuth alloy bismuth alloy, tin and its alloys, and indium and its alloys.
  • Figure 1 is a cross-sectional side view of apparatus for coating a plurality
  • Figure 2 is a view of superconductor particles which are sputtered with an
  • Figure 3 is a view similar to Figure 2 after the superconductor particles are
  • Figure 4 is a view similar to Figure 3 after a further coating layer is
  • Figure 5 is a view similar to Figure 4 after further stirring and sputtering
  • Figure 6 is a cross-sectional side view of a wire made out of a three
  • Figure 7 is a cross-sectional side view of apparatus for coating a plurality
  • Figure 8 is a side view of one superconductor particle which is sputtered
  • Figure 9 is a view similar to Figure 8 after the superconductor particle is rotated as it falls through a volume defined within the apparatus of Figure 7;
  • Figure 10 is a view similar to Figure 9 after a further coating layer is sputtered onto the superconductor particle;
  • Figure 11 is a view similar to Figure 10 after further rotation of and
  • Figure 12 is a cross-sectional side view of apparatus for coating a plurality of particles, according to a further embodiment of the invention.
  • Figure 13 is a cross-sectional side view of apparatus for coating a plurality
  • Figure 14 illustrates coated superconductor particles which are loosely
  • FIG 15 illustrates the superconductor particles after they are
  • FIG. 1 of the accompanying drawings illustrates apparatus 20 for
  • the apparatus 20 includes a chamber 22, a container 24, a stirring
  • a pump 32 and an argon gas supply 34 located outside the chamber 22.
  • the container 24 has a relatively wide base 36 near a base of the chamber
  • the link 42 has one end connected to the
  • the actuator 40 may for example be an electric motor with an
  • the link 42 is preferably vibrated in at
  • the container 24 is therefore also moved or
  • the sputter target 28 is located above the container 24 and a conductive
  • the sputter target 28 is located below a periphery of the sputter target 28.
  • the sputter target 28 is located below a periphery of the sputter target 28.
  • the pump 32 is connected via a line 46 to the chamber 22. Operation of the pump 32 causes a reduction in pressure within the chamber 22.
  • the argon gas source 34 is connected to the chamber 22 via a line 48
  • the argon gas source 34 may for example be a
  • argon gas particles may control flow of argon gas particles into the chamber 22.
  • the container 24 is filled with a plurality of ceramic superconductor
  • T c superconductor critical temperatures
  • the pump 32 is operated so that the pressure within the chamber 22
  • valve 50 is then opened and a small amount of
  • argon gas flows from the argon gas source 34 through the valve 50 into the
  • the argon ions collide with a lower surface of the
  • the coating particles 102 have high kinetic energy, but numerous collisions with gas particles in the chamber 22 both lower the energy of the coating particles and randomize the trajectories of the coating particles.
  • Figure 2 illustrates the superconductor particles 100 during an initial coating by the coating particles 102.
  • the coating particles 102 form an initial coating
  • coating layers 104 can be formed on surfaces that are not entirely horizontal. It is
  • a larger area of one of the superconductor particles 100 is
  • coating particles 102 are unidirectional.
  • the actuator 40 is continuously operated while the superconductor
  • FIG. 3 illustrates what happens to the superconductor particles 100, sputtered as shown in Figure 2, after being stirred due to operation of the actuator 40. Some of the superconductor particles 100A sputtered as shown in Figure 2, move down while other ones of the
  • Figure 4 illustrates the arrangement of superconductor particles of Figure
  • the superconductor particles 100 are thereby covered with further coating layers
  • superconductor particles 100 and the coating layers 110 are hereinafter referred to as superconductor particles 100 and the coating layers 110 .
  • the coated particles 112 are mixed with a material 114 and drawn into wire having a three component composition.
  • the material 114 is chosen to be
  • the material 114 provides ductility to the wire.
  • the material 114 provides ductility to the wire.
  • particles 100 can drive the material 114 to a superconductive state if the material
  • material of the coating layers 110 has to be sufficiently thin and be selected of a
  • coating layers 110 (and therefore also of the sputtered target 28 in Figure 1) is
  • the main purpose of the coating layers 110 is to protect the material 114
  • the coating particles shown in Figure 2 deposit from different sides onto each
  • a temperature below 500°C of the superconductor particles 102 is particularly beneficial because of a substantially reduced likelihood that the material of the superconductor particles 100 will lose oxygen and thus their superconducting properties.
  • FIG. 7 illustrates an alternative apparatus 130 which may overcome
  • apparatus 130 includes a chamber 132, a pump 134, and an argon gas supply 136,
  • the apparatus 130 further includes an upper container 138, a lower container
  • the upper container 148 is in the form of a funnel having a large upper
  • the lower container 140 is also in the
  • the upper container 138 is located at a higher elevation and the lower container 140 is located at a lower elevation below the upper container 138.
  • volume 160 is defined having a height extending from the upper area 154 of the
  • the cylindrical sputter target 142 extends vertically through the chamber 132.
  • the conductive pin 146 is located centrally within the cylindrical sputter
  • volume 160 is located between the pin 146 and one side of the cylindrical sputter
  • the cylindrical sputter target 142 is thus
  • the cylindrical sputter target 142 is connected to a negative terminal of
  • the voltage source 142 and the pin 146 is connected to a positive terminal of the
  • the voltage source 142 serves the same purpose as the
  • argon ions collide with a surface of the cylindrical sputter target
  • transporting device 164 such as a conveyor transports superconductor particles
  • the superconductor particles 100 are collected by the upper area 154 of the lower container 140 which catches the superconductor particles 100 and can move
  • the coating particles released from the cylindrical sputter target 142 move
  • the volume 160 without attaching to any of the superconductor particles 100 and attach to an opposing side of the cylindrical sputter target 142.
  • An advantage of the apparatus 130 is that it is suitable for large-scale
  • Coated particles 170 can simply be extracted from the lower container 140
  • a valve mechanism simply directing them to an opening out of the chamber 132.
  • uncoated superconductor particles 172 may be introduced into the system and be fed to the upper container 138.
  • coating particles 102 have velocities in multiple
  • target 142 is covered more with an initial layer 104 than a right side of the
  • the superconductor particle 100 rotates in a
  • coating layer 104 is formed, or rotation induced by the upper container 138 onto the superconductor particle 100.
  • the result of the rotation in the direction 106 is that a face 107 of the superconductor particle 100, which is not coated is step
  • Figure 10 illustrates a step that is typically carried out together with the
  • the superconductor particle 100 is further coated with a further coating 108 on the exposed surface 107. Further rotation and
  • coating of the superconductor particle 100 results in coating 110 which entirely
  • the partially coated superconductor particles are returned and recirculated
  • Figure 7 illustrates one example of a drop through sputtering apparatus
  • a cylindrical magnetron sputtering gun utilizes a
  • cylindrical sputter target such as the cylindrical sputter target 142 of Figure 7
  • Figure 12 illustrates a further apparatus 180 that can be used for coating superconductor particles.
  • the apparatus 180 includes a chamber 182, a container
  • the container 184 and the stirring device 186 are the same and serve the
  • the coil 188 is coated with a layer of material 194.
  • the pump 192 is connected to the chamber 182 via a connection line 196.
  • the pump 192 is operated until the pressure within the chamber
  • the voltage source 190 is then operated so that the
  • the material 194 is typically silver which evaporates at a
  • the coil 188 is heated to a temperature above
  • the evaporated silver form coating particles 102 which move with linear
  • the apparatus 180 as with the apparatus 20 of Figure 1, does not lend
  • sputtering is that deposition is multidirectional as described with reference to
  • coating particles 102 do not only find their way onto the superconductor
  • apparatus 180A which is essentially a modification of the apparatus
  • the apparatus 180 also includes a chamber 182A, a container
  • the container 197 is located within the chamber 182A.
  • the container 184A is located outside
  • a conductive cup 198 is located within the enclosure 197.
  • An outlet passage 199 is formed out of a lower surface of the enclosure 197.
  • composition includes superconductor particles 100, coating layers 110 on the
  • the material 114 is generally relatively brittle and the material 114 is generally relatively
  • composition finds particular application in a composition
  • the coating layers 110 are
  • Figure 3 illustrates a plurality of superconductor particles 200 which are coated with
  • the coated particles 212 are loosely grouped together
  • particles 212 are then compressed into a composition wherein the layers 210 form
  • the coating layers 210 are
  • Typical materials that can be driven to a superconductive state include
  • niobium and its alloys niobium and its alloys, a niobium titanium alloy, lead and its alloys, a lead
  • bismuth alloy bismuth alloy, tin and its alloys, and indium and its alloys. These materials may
  • Silver is also more reactive with the first material than silver.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

L'invention concerne la formation de plusieurs particules supraconductrices constituées d'un premier matériau relativement cassant, pour donner un état supraconducteur à une température relativement élevée, en général supérieure à 77 °K, soit la température de l'azote liquide. Une couche de revêtement est formée sur chaque particule, cette couche étant constituée d'un deuxième matériau sensiblement non réactif par rapport au premier matériau. Ensuite, les particules revêtues sont mélangées avec un troisième matériau, pour former un composite, ce troisième matériau étant à proximité du premier matériau mais séparé de lui par le deuxième matériau. Le troisième matériau, relativement ductile par rapport au premier matériau, passe à l'état supraconducteur sous l'effet du premier matériau lorsque celui-ci est à l'état supraconducteur, ledit troisième matériau étant à proximité du premier matériau. Il faut aussi que le troisième matériau soit à proximité du premier matériau. Le deuxième matériau protège le troisième matériau contre l'oxydation induite par le premier matériau. Le deuxième matériau est suffisamment fin pour permettre le passage du troisième matériau à l'état supraconducteur sous l'effet du premier matériau à travers le deuxième matériau. L'invention concerne un procédé et un dispositif permettant de former des couches de revêtement sur les particules supraconductrices, en utilisant par exemple la pulvérisation ou l'évaporation.
PCT/US2001/041145 2000-06-27 2001-06-25 Deposition de couches sur particules supraconductrices par pulverisation ou evaporation WO2002000358A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
AU2001273638A AU2001273638A1 (en) 2000-06-27 2001-06-25 Layer deposition on superconductor particles by sputtering or evaporation
US10/328,961 US20030181337A1 (en) 2001-06-25 2002-12-24 Layer deposition on superconductor particles by sputtering or evaporation

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US60485700A 2000-06-27 2000-06-27
US09/604,857 2000-06-27

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10/328,961 Continuation US20030181337A1 (en) 2001-06-25 2002-12-24 Layer deposition on superconductor particles by sputtering or evaporation

Publications (1)

Publication Number Publication Date
WO2002000358A1 true WO2002000358A1 (fr) 2002-01-03

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PCT/US2001/041145 WO2002000358A1 (fr) 2000-06-27 2001-06-25 Deposition de couches sur particules supraconductrices par pulverisation ou evaporation

Country Status (2)

Country Link
AU (1) AU2001273638A1 (fr)
WO (1) WO2002000358A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020027973A1 (fr) * 2018-08-02 2020-02-06 Lyten, Inc. Systèmes et procédés de projection de plasma

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4971944A (en) * 1989-02-21 1990-11-20 Westinghouse Electric Corp. Method of electroless depositing of gold onto superconducting particles
US5041416A (en) * 1988-10-17 1991-08-20 Fmc Corporation Superconductive metal matrix composites and method for making same
US5081072A (en) * 1988-07-07 1992-01-14 Hosokawa Micron Corporation Manufacturing method of superconducting material and product and superconducting material
US5091362A (en) * 1989-08-02 1992-02-25 The United States Of America As Represented By The Secretary Of The Navy Method for producing silver coated superconducting ceramic powder
US5998336A (en) * 1997-02-26 1999-12-07 The Board Of Trustees Of The Leland Stanford Junior University Ceramic/metal and A15/metal superconducting composite materials exploiting the superconducting proximity effect and method of making the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5081072A (en) * 1988-07-07 1992-01-14 Hosokawa Micron Corporation Manufacturing method of superconducting material and product and superconducting material
US5041416A (en) * 1988-10-17 1991-08-20 Fmc Corporation Superconductive metal matrix composites and method for making same
US4971944A (en) * 1989-02-21 1990-11-20 Westinghouse Electric Corp. Method of electroless depositing of gold onto superconducting particles
US5091362A (en) * 1989-08-02 1992-02-25 The United States Of America As Represented By The Secretary Of The Navy Method for producing silver coated superconducting ceramic powder
US5998336A (en) * 1997-02-26 1999-12-07 The Board Of Trustees Of The Leland Stanford Junior University Ceramic/metal and A15/metal superconducting composite materials exploiting the superconducting proximity effect and method of making the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020027973A1 (fr) * 2018-08-02 2020-02-06 Lyten, Inc. Systèmes et procédés de projection de plasma

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