WO2001082335A3 - Real-time evaluation of stress fields and properties in line features formed on substrates - Google Patents

Real-time evaluation of stress fields and properties in line features formed on substrates Download PDF

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Publication number
WO2001082335A3
WO2001082335A3 PCT/US2001/013545 US0113545W WO0182335A3 WO 2001082335 A3 WO2001082335 A3 WO 2001082335A3 US 0113545 W US0113545 W US 0113545W WO 0182335 A3 WO0182335 A3 WO 0182335A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrates
features formed
real
line features
properties
Prior art date
Application number
PCT/US2001/013545
Other languages
French (fr)
Other versions
WO2001082335A2 (en
Inventor
Subra Suresh
Ares J Rosakis
Original Assignee
California Inst Of Techn
Subra Suresh
Ares J Rosakis
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/560,719 external-priority patent/US6600565B1/en
Application filed by California Inst Of Techn, Subra Suresh, Ares J Rosakis filed Critical California Inst Of Techn
Priority to JP2001579331A priority Critical patent/JP3863779B2/en
Priority to AU2001255723A priority patent/AU2001255723A1/en
Priority to EP01928921A priority patent/EP1428242A2/en
Publication of WO2001082335A2 publication Critical patent/WO2001082335A2/en
Publication of WO2001082335A3 publication Critical patent/WO2001082335A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line

Abstract

Methods and systems (100) for evaluating stresses in line features formed on substrates (130). Stresses may be computed from measured curvature information (106) based on simple analytical functions. The curvature information (106) can be obtained optically by, e.g., a coherent gradient sensing method, to obtain a full-field measurement of an illuminated area.
PCT/US2001/013545 2000-04-27 2001-04-27 Real-time evaluation of stress fields and properties in line features formed on substrates WO2001082335A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2001579331A JP3863779B2 (en) 2000-04-27 2001-04-27 Real-time evaluation of stress field and properties of line structures formed on a substrate
AU2001255723A AU2001255723A1 (en) 2000-04-27 2001-04-27 Real-time evaluation of stress fields and properties in line features formed on substrates
EP01928921A EP1428242A2 (en) 2000-04-27 2001-04-27 Real-time evaluation of stress fields and properties in line features formed on substrates

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/560,719 2000-04-27
US09/560,719 US6600565B1 (en) 2000-04-25 2000-04-27 Real-time evaluation of stress fields and properties in line features formed on substrates

Publications (2)

Publication Number Publication Date
WO2001082335A2 WO2001082335A2 (en) 2001-11-01
WO2001082335A3 true WO2001082335A3 (en) 2004-03-25

Family

ID=24239057

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/013545 WO2001082335A2 (en) 2000-04-27 2001-04-27 Real-time evaluation of stress fields and properties in line features formed on substrates

Country Status (5)

Country Link
EP (1) EP1428242A2 (en)
JP (2) JP3863779B2 (en)
KR (1) KR100497278B1 (en)
AU (1) AU2001255723A1 (en)
WO (1) WO2001082335A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004026145A1 (en) 2004-05-28 2006-05-11 Advanced Micro Devices, Inc., Sunnyvale Semiconductor structure with a voltage sensitive element and method for measuring an elastic stress in a semiconductor structure
WO2010035139A2 (en) * 2008-09-29 2010-04-01 Sifi Diagnostic Spa Systems and methods for designing and implanting customized biometric intraocular lens
JP5581365B2 (en) * 2011-12-07 2014-08-27 ウルトラテック インク Method for characterizing a semiconductor light emitting device based on the characteristics of a product wafer
US10401279B2 (en) 2013-10-29 2019-09-03 Kla-Tencor Corporation Process-induced distortion prediction and feedforward and feedback correction of overlay errors
NL2017860B1 (en) * 2015-12-07 2017-07-27 Ultratech Inc Systems and methods of characterizing process-induced wafer shape for process control using cgs interferometry
CN109075093B (en) * 2016-03-30 2023-03-28 应用材料公司 Metrology system for substrate deformation measurement

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5227641A (en) * 1989-05-26 1993-07-13 Frontier Semiconductor Measurements, Inc. System for measuring the curvature of a semiconductor wafer

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03228347A (en) * 1990-02-02 1991-10-09 Hitachi Ltd Method of controlling internal stress of semiconductor element
JPH05335217A (en) * 1992-05-29 1993-12-17 Fujitsu Ltd Manufacture of mask for x-ray exposure
JPH06349917A (en) * 1993-06-04 1994-12-22 Hitachi Ltd Stress evaluation method and specimen
US6031611A (en) * 1997-06-03 2000-02-29 California Institute Of Technology Coherent gradient sensing method and system for measuring surface curvature

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5227641A (en) * 1989-05-26 1993-07-13 Frontier Semiconductor Measurements, Inc. System for measuring the curvature of a semiconductor wafer

Also Published As

Publication number Publication date
JP2004501355A (en) 2004-01-15
JP3863779B2 (en) 2006-12-27
AU2001255723A1 (en) 2001-11-07
JP2006189454A (en) 2006-07-20
WO2001082335A2 (en) 2001-11-01
KR20020093087A (en) 2002-12-12
KR100497278B1 (en) 2005-07-01
EP1428242A2 (en) 2004-06-16

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