WO2001075958A3 - Method for improving uniformity and reducing etch rate variation of etching polysilicon - Google Patents
Method for improving uniformity and reducing etch rate variation of etching polysilicon Download PDFInfo
- Publication number
- WO2001075958A3 WO2001075958A3 PCT/US2001/008618 US0108618W WO0175958A3 WO 2001075958 A3 WO2001075958 A3 WO 2001075958A3 US 0108618 W US0108618 W US 0108618W WO 0175958 A3 WO0175958 A3 WO 0175958A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- chamber
- substrate
- etching
- rate
- plasma
- Prior art date
Links
- 238000005530 etching Methods 0.000 title abstract 6
- 238000000034 method Methods 0.000 title abstract 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title 1
- 229920005591 polysilicon Polymers 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 8
- 239000007789 gas Substances 0.000 abstract 4
- 239000004065 semiconductor Substances 0.000 abstract 2
- 238000004140 cleaning Methods 0.000 abstract 1
- 235000011194 food seasoning agent Nutrition 0.000 abstract 1
- 238000001020 plasma etching Methods 0.000 abstract 1
- 238000005215 recombination Methods 0.000 abstract 1
- 230000006798 recombination Effects 0.000 abstract 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract 1
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE60142685T DE60142685D1 (en) | 2000-03-31 | 2001-03-16 | METHOD FOR POLETING POLYSILICIDE WITH IMPROVED HOMOGENEITY AND A REDUCED ARABIC RATEVARIATION |
AU2001247537A AU2001247537A1 (en) | 2000-03-31 | 2001-03-16 | Method for improving uniformity and reducing etch rate variation of etching polysilicon |
JP2001573536A JP4907827B2 (en) | 2000-03-31 | 2001-03-16 | Method for improving polysilicon etch uniformity and reducing etch rate variation |
AT01920490T ATE475985T1 (en) | 2000-03-31 | 2001-03-16 | METHOD FOR ETCHING POLYSILICON WITH IMPROVED HOMOGENEITY AND REDUCED ETCH RATE VARIATION |
EP01920490A EP1269529B1 (en) | 2000-03-31 | 2001-03-16 | Method for improving uniformity and reducing etch rate variation of etching polysilicon |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/540,549 | 2000-03-31 | ||
US09/540,549 US6514378B1 (en) | 2000-03-31 | 2000-03-31 | Method for improving uniformity and reducing etch rate variation of etching polysilicon |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2001075958A2 WO2001075958A2 (en) | 2001-10-11 |
WO2001075958A3 true WO2001075958A3 (en) | 2002-01-03 |
Family
ID=24155925
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2001/008618 WO2001075958A2 (en) | 2000-03-31 | 2001-03-16 | Method for improving uniformity and reducing etch rate variation of etching polysilicon |
Country Status (9)
Country | Link |
---|---|
US (1) | US6514378B1 (en) |
EP (1) | EP1269529B1 (en) |
JP (1) | JP4907827B2 (en) |
CN (1) | CN1230879C (en) |
AT (1) | ATE475985T1 (en) |
AU (1) | AU2001247537A1 (en) |
DE (1) | DE60142685D1 (en) |
TW (1) | TWI249205B (en) |
WO (1) | WO2001075958A2 (en) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030106646A1 (en) * | 2001-12-11 | 2003-06-12 | Applied Materials, Inc. | Plasma chamber insert ring |
US20040053506A1 (en) * | 2002-07-19 | 2004-03-18 | Yao-Sheng Lee | High temperature anisotropic etching of multi-layer structures |
US7098141B1 (en) | 2003-03-03 | 2006-08-29 | Lam Research Corporation | Use of silicon containing gas for CD and profile feature enhancements of gate and shallow trench structures |
US7151277B2 (en) * | 2003-07-03 | 2006-12-19 | The Regents Of The University Of California | Selective etching of silicon carbide films |
DE10358025A1 (en) * | 2003-12-11 | 2005-07-21 | Infineon Technologies Ag | Etching of tungsten involves using a gas mixture that contains nitrogen trifluoride, hydrogen bromide, and oxygen |
US8349128B2 (en) * | 2004-06-30 | 2013-01-08 | Applied Materials, Inc. | Method and apparatus for stable plasma processing |
US20060000802A1 (en) * | 2004-06-30 | 2006-01-05 | Ajay Kumar | Method and apparatus for photomask plasma etching |
US7208420B1 (en) | 2004-07-22 | 2007-04-24 | Lam Research Corporation | Method for selectively etching an aluminum containing layer |
US7226869B2 (en) * | 2004-10-29 | 2007-06-05 | Lam Research Corporation | Methods for protecting silicon or silicon carbide electrode surfaces from morphological modification during plasma etch processing |
US7291286B2 (en) * | 2004-12-23 | 2007-11-06 | Lam Research Corporation | Methods for removing black silicon and black silicon carbide from surfaces of silicon and silicon carbide electrodes for plasma processing apparatuses |
US7655571B2 (en) * | 2006-10-26 | 2010-02-02 | Applied Materials, Inc. | Integrated method and apparatus for efficient removal of halogen residues from etched substrates |
US7846845B2 (en) * | 2006-10-26 | 2010-12-07 | Applied Materials, Inc. | Integrated method for removal of halogen residues from etched substrates in a processing system |
US7909961B2 (en) | 2006-10-30 | 2011-03-22 | Applied Materials, Inc. | Method and apparatus for photomask plasma etching |
US7943005B2 (en) | 2006-10-30 | 2011-05-17 | Applied Materials, Inc. | Method and apparatus for photomask plasma etching |
JP4540729B2 (en) * | 2008-03-13 | 2010-09-08 | 積水化学工業株式会社 | Method and apparatus for etching silicon-containing film |
US8992689B2 (en) | 2011-03-01 | 2015-03-31 | Applied Materials, Inc. | Method for removing halogen-containing residues from substrate |
US11171008B2 (en) | 2011-03-01 | 2021-11-09 | Applied Materials, Inc. | Abatement and strip process chamber in a dual load lock configuration |
US8845816B2 (en) | 2011-03-01 | 2014-09-30 | Applied Materials, Inc. | Method extending the service interval of a gas distribution plate |
JP6114698B2 (en) | 2011-03-01 | 2017-04-12 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Detoxification and stripping chamber in a dual load lock configuration |
CN203746815U (en) | 2011-03-01 | 2014-07-30 | 应用材料公司 | Cavity for processing substrate |
CN102315112B (en) * | 2011-09-28 | 2016-03-09 | 上海华虹宏力半导体制造有限公司 | The lithographic method of stacked metal gate |
CN102355792B (en) * | 2011-10-19 | 2016-04-06 | 中微半导体设备(上海)有限公司 | Improve the inductively coupled plasma device of plasma uniformity and efficiency |
CN104137248B (en) | 2012-02-29 | 2017-03-22 | 应用材料公司 | Abatement and strip process chamber in a load lock configuration |
US20160056059A1 (en) * | 2014-08-22 | 2016-02-25 | Applied Materials, Inc. | Component for semiconductor process chamber having surface treatment to reduce particle emission |
CN105676588A (en) * | 2014-11-18 | 2016-06-15 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Substrate etching method |
CN109119373A (en) * | 2017-06-23 | 2019-01-01 | 北京北方华创微电子装备有限公司 | pressure ring assembly and reaction chamber |
CN108998834A (en) * | 2018-07-26 | 2018-12-14 | 芜湖凯兴汽车电子有限公司 | A kind of sensor monocrystalline silicon etching device |
WO2023076078A1 (en) * | 2021-10-29 | 2023-05-04 | Lam Research Corporation | Phased array antennas and methods for controlling uniformity in processing a substrate |
CN118099922A (en) * | 2024-04-28 | 2024-05-28 | 南京镭芯光电有限公司 | Method for etching compound semiconductor multilayer structure by inductively coupled plasma |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0669637A1 (en) * | 1994-02-28 | 1995-08-30 | Kabushiki Kaisha Toshiba | Plasma process apparatus |
EP0693769A2 (en) * | 1994-07-18 | 1996-01-24 | Applied Materials, Inc. | Plasma reactor with enhanced plasma uniformity by gas addition, reduced chamber diameter and reduced RF wafer pedestal diameter |
US5556500A (en) * | 1994-03-03 | 1996-09-17 | Tokyo Electron Limited | Plasma etching apparatus |
EP0860856A1 (en) * | 1997-01-02 | 1998-08-26 | Applied Materials, Inc. | RF plasma reactor with hybrid conductor and multi-radius dome ceiling |
WO1999014796A1 (en) * | 1997-09-16 | 1999-03-25 | Applied Materials, Inc. | Plasma chamber support having an electrically coupled collar ring |
WO2000007216A1 (en) * | 1998-07-29 | 2000-02-10 | Applied Materials, Inc. | A ceramic composition for an apparatus and method for processing a substrate |
Family Cites Families (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB8905073D0 (en) | 1989-03-06 | 1989-04-19 | Nordiko Ltd | Ion gun |
US4948458A (en) | 1989-08-14 | 1990-08-14 | Lam Research Corporation | Method and apparatus for producing magnetically-coupled planar plasma |
EP0439101B1 (en) | 1990-01-22 | 1997-05-21 | Sony Corporation | Dry etching method |
US5304279A (en) | 1990-08-10 | 1994-04-19 | International Business Machines Corporation | Radio frequency induction/multipole plasma processing tool |
US5242536A (en) | 1990-12-20 | 1993-09-07 | Lsi Logic Corporation | Anisotropic polysilicon etching process |
US5160407A (en) | 1991-01-02 | 1992-11-03 | Applied Materials, Inc. | Low pressure anisotropic etch process for tantalum silicide or titanium silicide layer formed over polysilicon layer deposited on silicon oxide layer on semiconductor wafer |
US5560804A (en) | 1991-03-19 | 1996-10-01 | Tokyo Electron Limited | Etching method for silicon containing layer |
KR100188455B1 (en) | 1991-05-20 | 1999-06-01 | 이노우에 아키라 | Drying etching method |
US6074512A (en) * | 1991-06-27 | 2000-06-13 | Applied Materials, Inc. | Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners |
JP3260168B2 (en) * | 1991-07-23 | 2002-02-25 | 東京エレクトロン株式会社 | Plasma processing equipment |
US5411624A (en) * | 1991-07-23 | 1995-05-02 | Tokyo Electron Limited | Magnetron plasma processing apparatus |
JP3179872B2 (en) | 1991-12-19 | 2001-06-25 | 東京エレクトロン株式会社 | Etching method |
JP2574094B2 (en) | 1992-02-27 | 1997-01-22 | 株式会社日本製鋼所 | Etching method |
US5241245A (en) | 1992-05-06 | 1993-08-31 | International Business Machines Corporation | Optimized helical resonator for plasma processing |
US5401350A (en) | 1993-03-08 | 1995-03-28 | Lsi Logic Corporation | Coil configurations for improved uniformity in inductively coupled plasma systems |
KR100276736B1 (en) | 1993-10-20 | 2001-03-02 | 히가시 데쓰로 | Plasma processing equipment |
US5670018A (en) | 1995-04-27 | 1997-09-23 | Siemens Aktiengesellschaft | Isotropic silicon etch process that is highly selective to tungsten |
US5665203A (en) | 1995-04-28 | 1997-09-09 | International Business Machines Corporation | Silicon etching method |
US5763327A (en) | 1995-11-08 | 1998-06-09 | Advanced Micro Devices, Inc. | Integrated arc and polysilicon etching process |
US5591664A (en) | 1996-03-20 | 1997-01-07 | Taiwan Semiconductor Manufacturing Company Ltd. | Method of increasing the capacitance area in DRAM stacked capacitors using a simplified process |
US5801077A (en) | 1996-04-22 | 1998-09-01 | Chartered Semiconductor Manufacturing Ltd. | Method of making sidewall polymer on polycide gate for LDD structure |
US5932115A (en) | 1996-05-03 | 1999-08-03 | Vanguard International Semiconductor Corporation | Method of manufacturing a crown shape capacitor |
US6070551A (en) * | 1996-05-13 | 2000-06-06 | Applied Materials, Inc. | Deposition chamber and method for depositing low dielectric constant films |
JPH1064883A (en) * | 1996-07-04 | 1998-03-06 | Applied Materials Inc | Plasma device |
US5804489A (en) | 1996-07-12 | 1998-09-08 | Vanguard International Semiconductor Corporation | Method of manufacturing a crown shape capacitor in semiconductor memory using a single step etching |
US5884412A (en) * | 1996-07-24 | 1999-03-23 | Applied Materials, Inc. | Method and apparatus for purging the back side of a substrate during chemical vapor processing |
US5904778A (en) * | 1996-07-26 | 1999-05-18 | Applied Materials, Inc. | Silicon carbide composite article particularly useful for plasma reactors |
US5861343A (en) | 1996-08-07 | 1999-01-19 | Vanguard International Semiconductor Corporation | Method for fabricating an aligned opening using a photoresist polymer as a side wall spacer |
US5920797A (en) * | 1996-12-03 | 1999-07-06 | Applied Materials, Inc. | Method for gaseous substrate support |
JP3165047B2 (en) | 1996-12-12 | 2001-05-14 | 日本電気株式会社 | Dry etching method for polycide film |
JP3568749B2 (en) * | 1996-12-17 | 2004-09-22 | 株式会社デンソー | Dry etching method for semiconductor |
US5792692A (en) | 1997-08-18 | 1998-08-11 | Chartered Semiconductor Manufacturing, Ltd. | Method of fabricating a twin hammer tree shaped capacitor structure for a dram device |
US6200388B1 (en) * | 1998-02-11 | 2001-03-13 | Applied Materials, Inc. | Substrate support for a thermal processing chamber |
JP4151749B2 (en) * | 1998-07-16 | 2008-09-17 | 東京エレクトロンAt株式会社 | Plasma processing apparatus and method |
US6022809A (en) | 1998-12-03 | 2000-02-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Composite shadow ring for an etch chamber and method of using |
US6227140B1 (en) * | 1999-09-23 | 2001-05-08 | Lam Research Corporation | Semiconductor processing equipment having radiant heated ceramic liner |
-
2000
- 2000-03-31 US US09/540,549 patent/US6514378B1/en not_active Expired - Lifetime
-
2001
- 2001-03-14 TW TW090105894A patent/TWI249205B/en not_active IP Right Cessation
- 2001-03-16 EP EP01920490A patent/EP1269529B1/en not_active Expired - Lifetime
- 2001-03-16 AU AU2001247537A patent/AU2001247537A1/en not_active Abandoned
- 2001-03-16 WO PCT/US2001/008618 patent/WO2001075958A2/en active Application Filing
- 2001-03-16 DE DE60142685T patent/DE60142685D1/en not_active Expired - Lifetime
- 2001-03-16 JP JP2001573536A patent/JP4907827B2/en not_active Expired - Lifetime
- 2001-03-16 AT AT01920490T patent/ATE475985T1/en not_active IP Right Cessation
- 2001-03-16 CN CNB018085032A patent/CN1230879C/en not_active Expired - Lifetime
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0669637A1 (en) * | 1994-02-28 | 1995-08-30 | Kabushiki Kaisha Toshiba | Plasma process apparatus |
US5556500A (en) * | 1994-03-03 | 1996-09-17 | Tokyo Electron Limited | Plasma etching apparatus |
EP0693769A2 (en) * | 1994-07-18 | 1996-01-24 | Applied Materials, Inc. | Plasma reactor with enhanced plasma uniformity by gas addition, reduced chamber diameter and reduced RF wafer pedestal diameter |
EP0860856A1 (en) * | 1997-01-02 | 1998-08-26 | Applied Materials, Inc. | RF plasma reactor with hybrid conductor and multi-radius dome ceiling |
WO1999014796A1 (en) * | 1997-09-16 | 1999-03-25 | Applied Materials, Inc. | Plasma chamber support having an electrically coupled collar ring |
WO2000007216A1 (en) * | 1998-07-29 | 2000-02-10 | Applied Materials, Inc. | A ceramic composition for an apparatus and method for processing a substrate |
Also Published As
Publication number | Publication date |
---|---|
EP1269529B1 (en) | 2010-07-28 |
ATE475985T1 (en) | 2010-08-15 |
DE60142685D1 (en) | 2010-09-09 |
AU2001247537A1 (en) | 2001-10-15 |
JP2003529931A (en) | 2003-10-07 |
WO2001075958A2 (en) | 2001-10-11 |
CN1230879C (en) | 2005-12-07 |
TWI249205B (en) | 2006-02-11 |
US6514378B1 (en) | 2003-02-04 |
CN1426597A (en) | 2003-06-25 |
JP4907827B2 (en) | 2012-04-04 |
EP1269529A2 (en) | 2003-01-02 |
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