WO2001073830A3 - Verfahren und vorrichtung zur elektrochemischen nanostrukturierung - Google Patents

Verfahren und vorrichtung zur elektrochemischen nanostrukturierung Download PDF

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Publication number
WO2001073830A3
WO2001073830A3 PCT/EP2001/003683 EP0103683W WO0173830A3 WO 2001073830 A3 WO2001073830 A3 WO 2001073830A3 EP 0103683 W EP0103683 W EP 0103683W WO 0173830 A3 WO0173830 A3 WO 0173830A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
electrochemical
relates
substrate surface
substrates
Prior art date
Application number
PCT/EP2001/003683
Other languages
English (en)
French (fr)
Other versions
WO2001073830A2 (de
Inventor
Thomas Schimmel
Christian Obermair
Matthias Mueller
Christian Klinke
Original Assignee
Univ Karlsruhe
Thomas Schimmel
Christian Obermair
Matthias Mueller
Christian Klinke
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Karlsruhe, Thomas Schimmel, Christian Obermair, Matthias Mueller, Christian Klinke filed Critical Univ Karlsruhe
Priority to AU2001265853A priority Critical patent/AU2001265853A1/en
Publication of WO2001073830A2 publication Critical patent/WO2001073830A2/de
Publication of WO2001073830A3 publication Critical patent/WO2001073830A3/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2049—Exposure; Apparatus therefor using a cantilever
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)

Abstract

Die vorliegende Erfindung betrifft ein Verfahren zur Herstellung von oberflächenstrukturierten Substraten, worin eine vorbestimmte definierte Oberflächenstrukturierung auf die Oberfläche eines Substrats durch Aktivierung der Substratoberfläche mittels mindestens einer feinen, mit der Substratoberfläche wechselwirkenden Sonde übertragen wird und Material von einem flüssigen, festen oder Salzschmelze-Elektrolyten selektiv an den derart aktivierten Bereichen der Substratoberfläche elektrochemisch abgeschieden wird, sowie eine Vorrichtung zum Oberflächenstrukturieren von Substraten.
PCT/EP2001/003683 2000-03-30 2001-03-30 Verfahren und vorrichtung zur elektrochemischen nanostrukturierung WO2001073830A2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2001265853A AU2001265853A1 (en) 2000-03-30 2001-03-30 Electrochemical nanostructuring method and device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10015931A DE10015931A1 (de) 2000-03-30 2000-03-30 Verfahren zur elektrochemischen Nanostrukturierung
DE10015931.1 2000-03-30

Publications (2)

Publication Number Publication Date
WO2001073830A2 WO2001073830A2 (de) 2001-10-04
WO2001073830A3 true WO2001073830A3 (de) 2002-03-14

Family

ID=7637045

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2001/003683 WO2001073830A2 (de) 2000-03-30 2001-03-30 Verfahren und vorrichtung zur elektrochemischen nanostrukturierung

Country Status (4)

Country Link
US (1) US20030155246A1 (de)
AU (1) AU2001265853A1 (de)
DE (1) DE10015931A1 (de)
WO (1) WO2001073830A2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10130219C2 (de) * 2001-06-22 2003-11-27 Univ Freiburg Kathodisches Strukturieren monomolekularer Schichten
TWI288294B (en) * 2004-03-19 2007-10-11 Hon Hai Prec Ind Co Ltd A manufacturing method of a cavity of a light guide plate
US7368045B2 (en) * 2005-01-27 2008-05-06 International Business Machines Corporation Gate stack engineering by electrochemical processing utilizing through-gate-dielectric current flow
US7651863B2 (en) * 2005-07-14 2010-01-26 3M Innovative Properties Company Surface-enhanced spectroscopic method, flexible structured substrate, and method of making the same
US20070014997A1 (en) * 2005-07-14 2007-01-18 3M Innovative Properties Company Tool and method of making and using the same
US7906057B2 (en) * 2005-07-14 2011-03-15 3M Innovative Properties Company Nanostructured article and method of making the same
DE102006013362A1 (de) * 2006-03-16 2007-09-27 Siemens Ag Verfahren zum Herstellen einer elektrischen Komponente mit einer Nanonadelstruktur

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5298760A (en) * 1991-08-09 1994-03-29 Basf Aktiengesellschaft Performance of location-selective catalytic reactions with or on the surfaces of solids in the nanometer or subnanometer range
US5504338A (en) * 1993-06-30 1996-04-02 The United States Of America As Represented By The Secretary Of The Navy Apparatus and method using low-voltage and/or low-current scanning probe lithography

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5298760A (en) * 1991-08-09 1994-03-29 Basf Aktiengesellschaft Performance of location-selective catalytic reactions with or on the surfaces of solids in the nanometer or subnanometer range
US5504338A (en) * 1993-06-30 1996-04-02 The United States Of America As Represented By The Secretary Of The Navy Apparatus and method using low-voltage and/or low-current scanning probe lithography

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
BRANDOW S L ET AL: "Metal pattern fabrication using the local electric field of a conducting atomic force microscope probe", 43RD NATIONAL SYMPOSIUM OF THE AMERICAN VACUUM SOCIETY, PHILADELPHIA, PA, USA, 14-18 OCT. 1996, vol. 15, no. 3, pt.2, Journal of Vacuum Science & Technology A (Vacuum, Surfaces, and Films), May-June 1997, AIP for American Vacuum Soc, USA, pages 1455 - 1459, XP002177488, ISSN: 0734-2101 *
NAOHARA H ET AL: "Tip-induced nanoscale electrochemical deposition of palladium and platinum on an Au(111) electrode surface", SCANNING TUNNELING MICROSCOPY/SPECTROSCOPY AND RELATED TECHNIQUES (STM'97). NINTH INTERNATIONAL CONFERENCE, HAMBURG, GERMANY, 20-25 JULY 1997, vol. 66, suppl., pt.1-2, Applied Physics A (Materials Science Processing), March 1998, Springer-Verlag, Germany, pages S457 - S461, XP001027967, ISSN: 0947-8396 *

Also Published As

Publication number Publication date
WO2001073830A2 (de) 2001-10-04
AU2001265853A1 (en) 2001-10-08
US20030155246A1 (en) 2003-08-21
DE10015931A1 (de) 2001-10-04

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