WO2001073825A1

WO2001073825A1 - Aligner, apparatus and method for transferring wafer, microdevice and method for manufacturing the same

Info

Publication number: WO2001073825A1
Application number: PCT/JP2001/002634
Authority: WO
Inventors: Takashi Aoki; Naomasa Shiraishi; Soichi Owa
Original assignee: Nikon Corporation
Priority date: 2000-03-29
Filing date: 2001-03-29
Publication date: 2001-10-04
Also published as: AU4462001A

Abstract

An aligner comprising transfer mechanisms (14, 16) provided with a gas inflow suppression mechanism (17) for forming a gas flow for suppressing inflow of gas from transfer paths (13, 15) into at least one space (S) between an exposing energy generating source and a wafer stage. When a wafer is transferred into the space or out therefrom by means of the transfer mechanisms, the gas inflow suppression mechanism can prevent inflow of gas from the transfer path into the space without interrupting the transfer of the wafer temporarily. Furthermore, the concentration of light absorbing substances in the space can be maintained at a low level without replacing gas in a load lock chamber between the transfer path and the space.

Description

Description: Exposure apparatus, substrate transfer apparatus and method, microdevice and method for manufacturing the same

The present invention relates to, for example, an exposure apparatus, a substrate transfer method, a micro device, and a method for manufacturing the same, which are used for manufacturing a fine circuit pattern of a semiconductor element, a liquid crystal display element, or the like. Background art

When manufacturing a semiconductor device or a liquid crystal display device by a photolithographic process, a pattern image of a reticle is projected via a projection optical system onto a projection area (shot) on a wafer coated with a photosensitive material (resist). A reduction projection exposure apparatus that reduces the size of the image and projects it is used. The circuit in the semiconductor element is transferred by exposing a circuit pattern on a wafer by the projection exposure apparatus, and is formed by post-processing. An integrated circuit is obtained by repeatedly layering about 20 layers of such circuit wiring.

In recent years, high-density integration of integrated circuits, that is, miniaturization of circuit patterns, has been promoted. For this reason, the exposure light in the projection exposure apparatus also tends to have a shorter wavelength. In other words, the KrF excimer laser (λ) has been used instead of the emission line of mercury lamps, which has been the mainstream until now, and the practical use of short-wavelength ArF excimer laser (λ = 193ηπι) is finally completed. We are entering the stage. the higher density integration and aims are research underway of F ₂ laser (X = 157 nm). However, the vacuum ultraviolet light such as F ₂ laser (wavelength of about 190mn following UV In), the optical glass material has a large dimming due to absorption of gas molecules contained in the air, which hinders high throughput.

The exposure apparatus basically includes four parts: an illumination optical system, a reticle operation unit, a projection optical system, and a wafer operation unit. The exposure light from the exposure light source first passes through the illumination optical system. The illumination optical system shapes the exposure light from the exposure light source into a desired shape, enhances the uniformity of illuminance in the light beam, and limits the area of the exposure light irradiated on the reticle. And other functions.

The reticle is a circuit pattern that prints on a wafer with a light-shielding substance on a glass material that transmits exposure light. The reticle operation unit that operates this reticle is a reticle holding, reticle replacement, and scan type. It has functions such as scanning in an exposure apparatus, has relatively many movable parts compared to an illumination optical system, and often has outside air mixed therein. The projection optical system is used to form an image of the circuit pattern transmitted through the reticle on the wafer surface, and has a closed structure. A wafer is a part that becomes a semiconductor element or the like in a post-processing step after a circuit pattern on a reticle is transferred.

The wafer operation unit performs wafer holding, wafer exchange, movement of the exposure area, scanning with a scanning type exposure apparatus, and many movable parts like the reticle operation unit.

For example, in the case of vacuum ultraviolet light having a wavelength of about 180 nm or less, substances that transmit these short-wavelength lights are extremely limited. In ordinary air, vacuum ultraviolet light is absorbed by oxygen molecules, water molecules, carbon dioxide molecules, etc. contained in the air (hereinafter referred to as light-absorbing substances), so that the exposure light passes through the reticle and has sufficient illuminance on the surface. It is not easy to reach by using a laser beam with a wavelength of 157 nm, and it is necessary to fill the optical path space with an inert gas such as helium, argon, or nitrogen that has little absorption. For this reason, in an exposure apparatus using vacuum ultraviolet light, after taking measures to increase the degree of airtightness of the exposure light path space and prevent the inflow of outside air and the outflow of purge gas, the light absorbing material on the exposure light path is removed. They need to be reduced or eliminated.

Therefore, if there is something like a reticle or a wafer that is frequently brought into the optical path space from outside the optical path space, these substances are temporarily stored in the load lock chamber, and the gas in the load lock chamber is purified by a high-purity purge gas that does not absorb light. (Inert gas) and other measures are required. In general, there are two approaches to gas replacement. One is a method using reduced pressure exhaust, and the other is gas replacement under a constant pressure. In the former case, it was pointed out that substances (mainly water and hydrocarbons) adsorbed on the interior walls of the mouthlock due to decompression desorbed and adhered to the reticle processing equipment, hindering the production of accurate products. Have been. In the latter case, gas replacement generally takes a long time, which may cause a problem such as a decrease in throughput. Disclosure of the invention

The present invention has been made in view of the above-described problems, and has an exposure apparatus and a substrate transfer apparatus capable of reducing the time required for loading and unloading a substrate such as a reticle and a wafer, and capable of satisfactorily managing light-absorbing substances in an optical path space. And a method, a microdevice and a method for manufacturing the same.

An exposure apparatus according to a first aspect of the present invention is an exposure apparatus that irradiates a substrate with exposure energy from an exposure energy generation source, and includes: a storage chamber that stores the substrate; A transport mechanism that unloads the storage chamber from the transport path via the transport path; and a gas inflow suppression mechanism that forms a gas flow for suppressing the inflow of gas from the transport path into the storage chamber.

In this exposure apparatus, the transfer mechanism has a gas inflow suppression mechanism that forms a gas flow for suppressing the inflow of gas from the transfer path into the storage chamber. When the gas is carried into and out of the room, the gas inflow suppression mechanism actively prevents the gas from flowing into the accommodation room from the carrying path by the gas flow, so that there is no need to temporarily stop the carrying, and the carrying is performed. The light-absorbing substance in the storage chamber can be maintained at a low concentration without performing exhaust or gas replacement in a load port chamber or the like between the road and the storage chamber. As a result, it is possible to reliably print a circuit pattern, and to increase the manufacturing speed (throughput) of an electronic device.

An exposure apparatus according to another aspect of the present invention is an exposure apparatus that irradiates a substrate with exposure energy from an exposure energy generation source, and includes: a storage chamber that stores the substrate; A transfer mechanism for unloading from the storage chamber via the transfer path, and a transfer chamber having a wall for closing a gas flow path from the transfer path to the storage chamber during the loading or unloading. Have.

In this exposure apparatus, the transfer mechanism includes a wall that closes a gas flow path from a transfer path to the storage chamber when the substrate is loaded into or out of the storage chamber. Chamber, the wall blocks the gas flow path when the substrate is taken in and out, and the gas contained in the transfer chamber is suppressed only by the inflow. Mixing of impurity gas into the exposure optical path space can be minimized, and the impurity concentration in the space can be kept low. The gas inflow suppression mechanism is provided in the middle of the transport path, or between the transport path and the storage chamber, for supplying the gas into the transport path, and for sucking the gas in the transport path. The gas supply port may be disposed between the storage chamber and the gas suction port.

In addition, the gas supply port is provided in the transport path such that an inflow direction of the gas is away from the storage chamber, and the gas exhaust port is such that a suction direction of the gas is directed to the storage chamber side. As described above. In this case, a more effective air shower space can be formed by generating a gas flow to the outside of the internal storage chamber more smoothly and at a higher flow rate.

In the present invention, in the gas inflow suppressing mechanism, a pair of a gas supply port and a gas exhaust port may be arranged along the transport path. In this case, a continuous air shower space can be formed, and the inflow of the light absorbing substance can be further suppressed.

The substrate may be a mask to which the exposure energy is applied via an illumination light system, and the storage chamber may include a mask stage for holding the mask. Alternatively, the substrate may be a wafer to which an image of a pattern formed on the mask is transferred via a projection optical system, and the accommodation chamber has a wafer stage for holding the wafer. May be.

In the present invention, the transfer chamber may be a movable chamber arranged so as to be movable between a position at which a substrate can be taken in and out of the space and a position at which a substrate can be taken in and out of the space. The flow path may be closed when the substrate is arranged at a position where the substrate can be taken in and out from the outside of the space and when the substrate is arranged at a position where it can be taken in and out from the inside of the space. In this case, the substrate can be loaded and unloaded by simply moving the transfer chamber, and the inflow of gas at the time of transfer into and out of the wall can be minimized without performing gas replacement in the transfer chamber.

In the present invention, the moving chamber may be a rotating chamber that is rotatable in and out of the space, and when the rotating chamber is arranged in the space, the substrate can be taken in and out of the space. Alternatively, the substrate may be allowed to enter and exit from the outside of the space when the substrate is disposed outside the space. In this case, the substrate can be loaded and unloaded while suppressing the gas inflow only by the operation of rotating the rotating chamber. In the present invention, the wall of the transfer chamber may be an outer door that allows a substrate to be taken in and out from the outside of the storage chamber and an inner door that can take a substrate in and out of the space. In this case, the substrate can be loaded and unloaded by simply opening and closing the outer and inner doors, and the gas at the time of loading and unloading by the outer and inner doors can be replaced without replacing the gas in the transfer chamber. Can be reduced as much as possible.

In the exposure apparatus of the present invention, the inside of the accommodation room may be set to a higher pressure than the outside, or may be set to substantially the same pressure. In this case, even when the storage chamber is temporarily connected to the outside such as a transfer path when the substrate is loaded or unloaded, the inflow of the light-absorbing substance from the outside of the storage chamber can be suppressed.

In the exposure apparatus of the present invention, the accommodating chamber is at least one of an accommodating chamber for accommodating a mask stage for mounting a mask or an accommodating chamber for accommodating a substrate stage, and the substrate is at least one of a mask and a substrate. Good. The exposure apparatus has a relatively short optical path length, has many movable parts, and in the above-mentioned accommodation room where a mask or a substrate is frequently carried in and out, it can inevitably tolerate a higher concentration of the light-absorbing substance and at the same time can carry out the above-described high-speed carrying in and out. Is required.

The substrate transfer apparatus of the present invention includes: a transfer mechanism that loads the substrate into the storage chamber via a transfer path or unloads the substrate from the storage chamber through the transfer path; and inflows gas from the transfer path into the storage chamber. And a gas inflow suppression mechanism that forms a gas flow for suppressing the gas flow.

The substrate transfer device may include a gas supply port provided in the transfer path or between the transfer path and the storage chamber to supply the gas into the transfer path, and a gas to suck the gas in the transfer path. The gas supply port may be provided between the storage chamber and the gas suction port.

Further, in the substrate transfer apparatus, the gas supply port is provided in the transfer path so that an inflow direction of the gas is away from the storage chamber, and the gas exhaust port is configured to store the gas in the storage direction. It may be provided in the transport path so as to face the room.

The substrate transfer method according to the present invention is configured to suppress inflow of gas from the transfer path to the storage chamber between a storage chamber that stores the substrate and a transfer path that transfers the substrate. The gas flow is formed, and the substrate is transferred through the formed gas flow via a transfer mechanism.

In this transfer method, the gas may be supplied into the transfer path from the middle of the transfer path or between the transfer path and the storage chamber, and the gas in the transfer furnace may be sucked.

The microdevice of the present invention is a microdepice manufactured through a transfer step of transferring a pattern of a mask onto a substrate, and the transfer step is performed by the exposure apparatus.

The method for manufacturing a micro device of the present invention includes a transfer step of transferring a pattern of a mask onto a substrate, and the transfer step is performed by the exposure apparatus of the present invention.

In the microdevice and the method for manufacturing the microdevice, since the transfer step is performed by the above-described exposure apparatus, a reliable pattern transfer is performed at a high throughput, and a microphone opening device such as a low-cost and high-quality semiconductor device or a liquid crystal device can be manufactured. Obtainable. BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 is a schematic overall configuration diagram showing an exposure apparatus in a first embodiment of an exposure apparatus, a micro device, and a method of manufacturing the same according to the present invention.

FIG. 2A to FIG. 2C are schematic cross-sectional views of a main part showing operations of a reticle transport system and a wafer transport system in the first embodiment of the exposure apparatus, the microdepice and the method of manufacturing the same according to the present invention. It is.

FIG. 3 is a schematic cross-sectional view of a main part showing a reticle transport system and a wafer transport system in a second embodiment of the exposure apparatus, the micro device, and the method of manufacturing the same according to the present invention.

FIG. 4 is a schematic sectional view of a main part showing a reticle transport system and a wafer transport system in a third embodiment of the exposure apparatus, the micro device and the method of manufacturing the same according to the present invention.

FIG. 5A to FIG. 5E are schematic cross-sectional views of the main part showing the operation of the reticle transport system in the fourth embodiment of the exposure apparatus, the micro device, and the method of manufacturing the same according to the present invention. FIG.

FIGS. 6A to 6E are schematic cross-sectional views of main parts showing the operation of a reticle transport system in a fifth embodiment of the exposure apparatus, the micro device, and the method for manufacturing the same according to the present invention.

FIGS. 7A to 7C are schematic cross-sectional views of main parts showing the operation of a reticle transport system in a sixth embodiment of the exposure apparatus, the microdepice, and the method of manufacturing the same according to the present invention.

FIG. 8 is a schematic plan view of a main part showing a reticle transport system in a sixth embodiment of an exposure apparatus, a micro device, and a method of manufacturing the same according to the present invention.

FIG. 9A to FIG. 9E are schematic cross-sectional views of main parts showing the operation of a reticle transport system in a seventh embodiment of the exposure apparatus, the micro device, and the method of manufacturing the same according to the present invention. .

FIG. 10 is a flowchart showing an example of a semiconductor device manufacturing process. BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, a first embodiment of an exposure apparatus, a micro device, and a method of manufacturing the same according to the present invention will be described with reference to FIG. 1 and FIGS. 2A to 2C. However, the present invention is not limited to the following embodiments. For example, the components of these embodiments may be combined as appropriate.

FIG. 1 is a diagram schematically showing the overall configuration of an exposure apparatus in the present embodiment. The exposure apparatus emits, as an exposure light source 1, exposure light IL of vacuum ultraviolet light (wavelength: 157 nm). a semiconductor element (device) for manufacturing a projection exposure apparatus by a step 'and' scan method having a F ₂ laser. 'In this exposure apparatus, the exposure light IL emitted from the exposure light source 1 is incident on the deflection mirror 2a in the illumination optical system L 光学.

The illumination optical system L O has a rod lens or fly-eye lens 3 as an optical integrator, a deflecting mirror 2b, relay lenses 8a and 8b, a blind 9, a condenser lens 10, and the like.

That is, the exposure light IL reflected from the deflecting mirror 2a is The light enters the condenser lens 10 via the deflecting mirror 2b, the relay lens 8a, the blind 9, the relay lens 8b, and the polarizing mirror 2c.

In the illumination optical system LO, a reflection mirror (not shown) for extracting a part of the exposure light and transmitting the remaining exposure light is disposed between the fly-eye lens 3 and the deflecting mirror 2b, and is reflected from the reflection mirror. An integrator sensor (not shown) that receives the exposed exposure light IL and monitors the exposure energy, and receives and returns the exposure light IL that is reflected back from the optical system and the like after the reflection mirror via the reflection mirror. And a reflectance monitor (not shown) for monitoring.

The exposure light IL that has passed through the condenser lens 10 is incident on a reticle (mask, substrate) on a two-dimensionally movable reticle stage RST supported in the reticle chamber 11. Further, the exposure light IL transmitted through the reticle R enters the projection optical system PL and transmits through a plurality of lens elements constituting the projection optical system PL. Further, the exposure light IL enters the wafer (substrate) W on the wafer stage WST designated in the wafer chamber 12 and forms a pattern image on the reticle R on the surface of the wafer W. The reticle chamber 11 is loaded with a reticle R onto a reticle stage RST arranged in its internal space S via a channel-like reticle transport path 13 or a reticle R is loaded from the reticle stage RST onto the reticle transport path 13. A reticle transport system (transport mechanism) 14 for unloading via a port is connected. The wafer W is loaded onto the wafer stage WST disposed in the internal space S of the wafer chamber 12 through the wafer transport path 15 having a pipe shape, or the wafer W is loaded from the wafer stage WST through the wafer transport path 15. A wafer transfer system (transfer mechanism) 16 for unloading is connected.

The wafer W is placed on the sample stage 13 on the wafer stage WST that can move in the three-dimensional directions (XYZ directions), and the positions of the reticle stage RST and the wafer stage WS in the XY plane are the reticle stage R ST In addition, laser light is incident on an interferometer mirror (not shown) provided on the wafer stage WST and reflected by a laser interferometer (not shown), and is measured by reflection.

Reticle stage RST and wafer stage WST are moved synchronously during exposure, and a pattern is exposed on wafer W by a so-called step-and-scan method. The integrated exposure amount and reflectivity of the exposure light are measured and monitored by an integrator sensor and a reflectivity monitor, and the measured values are sent to a control system (not shown) as a signal, and the illuminance during printing on the wafer You can know.

A concentration meter (not shown) that measures the concentration (purge purity) of the light-absorbing substance in these optical path spaces is connected to the illumination optical system LO, the reticle chamber 11, the projection optical system P L and the wafer chamber 12. The measured value is sent to the control system as a signal. The above four parts may be managed at different light-absorbing substance concentrations according to the optical path length / disturbance frequency. Further, a gas supply mechanism (illustration shown) for supplying a purge gas (for example, helm, argon, nitrogen, etc.) having a small absorption rate to the inside of the illumination optical system LO, the reticle chamber 11, the projection optical system PL, and the wafer chamber 12. (Abbreviated) is connected. That is, in order to reduce or eliminate the light absorbing substance from the inside of each of the above parts, a purge gas (high cleanliness) having a low light absorbing rate is supplied by a gas supply mechanism. It is desirable that the internal pressure of at least the internal space S in the reticle chamber 11 is set to be higher than that of the outside, or that the internal pressure and the external pressure are set to be substantially the same.

As shown in FIG. 2A to FIG. 2C, the reticle transport system 14 and the wafer transport system 16 of the present embodiment have a reticle chamber 11 and a wafer chamber 12 (hereinafter, reticle chamber 11 is an example). The gas for suppressing the inflow of gas from the reticle transport path 13 and the wafer transport path 15 (hereinafter described using the reticle transport path 13 as an example) with respect to each internal space S is described. It has a gas inflow suppression mechanism 17 that forms a flow. That is, the gas inflow control mechanism 17 is provided at a connection portion with the internal space S such as the reticle transport path 13 and the like. It has a gas supply port 17a for supplying gas) and a gas exhaust port (gas suction port) 17b for sucking and exhausting the gas supplied from the gas supply port 17a.

The reticle chamber 11 and the wafer chamber 12 correspond to the storage chamber in the present invention. Further, it is desirable that a plurality of combinations of the gas supply port 17a and the gas exhaust port 17b in the present embodiment be provided for the transport path.

A gas supply pipe 17c connected to a gas supply source (not shown) is connected to the gas supply port 17a, and a gas suction source such as a vacuum pump (not shown) is connected to the gas exhaust port 17b. Connected to the gas exhaust pipe 17d. The gas supply port 17a is disposed between the internal space S and the gas exhaust port 17b, and the gas supply pipe 17a is arranged so that the gas inflow direction is away from the internal space S. It is formed by inclining c. Further, the gas exhaust port 17b is formed by inclining the gas exhaust pipe 17d such that the gas suction direction is directed to the internal space S side. Therefore, between the gas supply port 17a and the gas exhaust port 17b, a space in which the gas flow generates an air shower from the inside space S to the outside (hereinafter, referred to as an air shower space) A will be formed.

The entrance 18 to the internal space S is provided with a shutter 18 a capable of opening and closing the entrance 18, and the shutter 18 a is a reticle R and a wafer W (hereinafter, referred to as a reticle R, etc.). The entrance 18 is opened when loading / unloading, and the entrance 18 is closed except when loading / unloading.

Next, a method of transporting the reticle R and the reticle W in the present embodiment will be described. The reticle R is transferred from a reticle library (not shown) that manages a plurality of available reticles R to the reticle transport system 14 in the internal space S of the reticle chamber 11 that controls the concentration of light-absorbing substances. And set it on the optical path of the exposure light IL on the reticle stage RST. The wafer W is similarly moved into the internal space S of the chamber 12 where the concentration of the light-absorbing substance is controlled by the carrier system 16 and placed on the optical path of the exposure light IL on the wafer stage WST.

Since the reticle R differs for each semiconductor element to be baked or for each layer to be baked, and the reticle R is exchanged according to a necessary process, reticle exchange is frequently performed. Therefore, when the reticle R is carried into the reticle chamber 11, the exposure light IL is absorbed by the light-absorbing material unless the inflow of the light-absorbing material is further reduced, and it is difficult to secure an exposure amount necessary for transferring the light-shielding pattern. Since the loading of the wafer W into the wafer chamber 12 is performed more frequently than that of the reticle R, the reduction of the inflow of the light-absorbing substance during the loading is more important than that of the reticle.

For this reason, when the reticle R and the like are carried into the reticle chamber 11 and the wafer chamber 12, the gas supply port 17 a installed on the internal space S side into the air shower space A and the internal space S High-purity inert gas with less absorption toward the gas exhaust port 17 b installed outside the wafer, that is, from the reticle chamber 11 side and the wafer chamber 12 side to the outside. Ejects a flammable gas. At this time, gas is supplied from a direction that intersects the direction of transport (loading or unloading) of reticle R or the like.

In order to further reduce the contamination of the external atmosphere gas into the air shower space A, the high-purity purge gas flow from the gas supply port 17a must be fast enough to reduce the inflow of light-absorbing substances from the outside. At the same time, the gas is exhausted and discharged from the gas exhaust port 17b with high suction power.

At this time, the gas supply port 17a is formed so that the gas inflow direction is away from the internal space S, and the gas exhaust port 17b is set so that the gas suction direction is toward the internal space S. Since it is formed so as to face, the flow velocity of the gas flow to the outside of the internal space S is increased, and the mixing of the external atmosphere gas into the air shower space A is further reduced. The amount of gas mixed in from the outside of the air shower space A depends on the shape of the air shower space A and the position, direction, diameter, etc. of the gas supply port 17a and gas exhaust port 17b. It is preferable to optimize the shape and the like.

This makes it possible to further reduce the inflow of the light-absorbing substance into the internal space S without a structure such as a load lock chamber that separates the internal space S, which is the exposure optical path space, from the outside. That is, as shown in FIG. 2A to FIG. 2C, the reticle R and the like move in the air space A to form a member that isolates the inside and outside of the exposure light path space like a door of a load port chamber. It is carried into and out of the internal space S such as the reticle room 11 at a higher speed without waiting time for opening and closing.

Except during loading and unloading, the gas supply cost can be reduced by reducing the flow rate of the supply gas or stopping the supply.

It is desirable to generate an air shower with the same type of gas as the inside of the internal space S, but other non-absorbing substances such as helium, argon, and nitrogen may be used. Furthermore, a large amount of purge gas is required to generate an air shower, but after collecting the gas through the gas exhaust port 17b, the gas can be reused by passing through a purifier, a particle filter, or the like. This can reduce an increase in running cost of the present apparatus.

Next, a second embodiment of the present invention will be described with reference to FIG.

The difference between the second embodiment and the first embodiment is that the first embodiment has a gas supply port 17a and While the pair of gas exhaust ports 17b are installed in the reticle transport path 13 and the like, the exposure apparatus of the second embodiment uses the reticle transport system 20 and wafer transport as shown in FIG. A point that a plurality of pairs of a gas supply port 17a and a gas exhaust port 17b are arranged along the reticle transport path 23 and the wafer transport path 24 as the gas inflow suppression mechanism 22 of the system 21. .

In the case of the first embodiment, even if the speed of the air shower gas is increased or the air supply / exhaust port is optimized, if there is no barrier that separates the inside and outside of the exposure optical path space, the outside air (gas from the transport path) ) Is inevitable. Therefore, in the second embodiment, the air shower spaces A1, A2, and A3 are continuously installed from the internal space S side to the outside by a plurality of pairs of the gas supply port 17a and the gas exhaust port 17b. In each case, an air shower is generated as in the air shower space A of the first embodiment.

The air shower space A2 can reduce the amount of outside air mixed in compared to the air shower space A3, and the air shower space A1 can reduce the amount of outside air mixed in compared to the air shower space A2. Finally, the intrusion of outside air into the internal space S of the reticle chamber 11 or the like can be further reduced.

Here, the gas sucked in the gas exhaust port 17b of the air shower space A1 may be supplied from the gas supply port 17a of the air shower space A2, A3. As another example, the gas sucked in the gas exhaust port 17 b of the air shower space A 1 is supplied again from the gas supply port 17 a of the air shower space A 2, and the gas in the air shower space A 2 is supplied. The gas sucked at the exhaust port 17b may be supplied again from the gas supply port 17a of A3 during the air shower. In this way, by using the gas used in the air shower space A1 again in the air shower spaces A2 and A3, the gas consumption can be suppressed.

It is desirable that the concentration of the gas supplied from the gas supply port 17a be set higher from the reticle library and the wafer cassette to the internal space S such as the reticle chamber 11 or the like.

Next, a third embodiment of the present invention will be described with reference to FIG.

The difference between the third embodiment and the first embodiment is that the first embodiment is different from the first embodiment in that the gas supply port 17a and the gas exhaust port 17b extend from the internal space S side to the outside in the reticle transport path 13 and the like. In the exposure apparatus of the third embodiment, as shown in FIG. 4, the gas inflow suppressing mechanism 32 of the reticle transfer system 30 and the wafer transfer system 31 is used. The point is that the gas supply port 32a and the gas exhaust port 32b are arranged to face each other at the same position in the transfer direction of the reticle transfer path 33 and the wafer transfer path 34. That is, in this embodiment, the gas supplied from the gas supply port 32 a is directly sucked into the gas exhaust port 32 b facing the gas supply port 32 a, and the gas supply port 32 a An air curtain space K is formed between the gas curtain 32 and the gas exhaust port 32b. Therefore, the flow of gas that is going to flow through the reticle transport path 33 toward the internal space S such as the reticle chamber 11 is blocked by the air curtain space K, and the inflow to the inside is suppressed. The inflow of a light absorbing substance from the outside can be reduced.

Next, a fourth embodiment of the present invention will be described with reference to FIGS. 5A to 5E.

The difference between the fourth embodiment and the first embodiment is that the first embodiment carries in and out the reticle R through the air shower space A with the gas supply port 17a and the gas exhaust port 17b. On the other hand, in the exposure apparatus of the fourth embodiment, as shown in FIG. 5A to FIG. 5E, the revolving door chambers (transfer chamber, moving chamber, and rotary chamber) 41 of the reticle transport system 40 are used. The reticle R is carried into or out of the internal space S of the reticle chamber 11 via the reticle chamber 11. Reticle R is held in revolving door chamber 41 on its upper and lower surfaces (in a direction perpendicular to the plane of the paper in the figure).

That is, the exposure apparatus of the present embodiment includes a reticle R loading port 18 (a rail that is a reticle transport path of the reticle transport system 42 (a moving path of the transport arm that transports the reticle) 4 2a and the reticle chamber 11). A rotating door chamber 41 having a rotating shaft 41 a at the connection portion with the internal space S) and rotatably moving inside and outside the internal space S is provided. As shown in FIG. 5A and FIG. 5B, when the revolving door chamber 41 is disposed outside the internal space S, the reticle R can be put in and out from the outside of the internal space S. As shown in FIG. 5C, the reticle R can be rotated and moved into and out of the inner space S when placed in the inner space S as shown in FIG. 5D and FIG. 5E. State, and these states can be switched by rotation.

As shown in FIG. 5B and FIG. 5D, the revolving door chamber 41 has the revolving door (wall) 41b in both states in which the reticle R can be inserted and removed, and the loading port (flow path) 18 as a whole. Shut off Prevents gas from flowing from reticle transport system 42 into internal space S. The revolving door 41b is provided with an elastic member 41c such as viton at a portion in contact with the side wall of the apparatus so as to be more closely attached to the side wall of the apparatus around the carry-in port 18. Degassing-treated sealing materials are also provided. .

The pressure in the internal space S of the reticle chamber 11 may be set slightly higher than that of the outside.

In the present embodiment, for example, when the reticle R is carried into the internal space S of the reticle chamber 11, when the reticle R reaches the vicinity of the reticle chamber 11 by the reticle transport system 42 or before, the FIG. As shown in 5 A, open the revolving door chamber 41 toward the outside of the internal space S. Reticle R, which has moved on rails 4 2a of reticle transport system 42, is stored in revolving door chamber 41 as shown in FIG. 5B, and then revolved as shown in FIG. 5C. Rotate chamber 41.

After the revolving door chamber 41 is opened toward the inside of the internal space S as shown in FIG. 5D, the reticle R is moved toward the reticle stage R and ST as shown in FIG. 5E. Let it. Therefore, in the states of FIG. 5A and FIG. 5B and FIG. 5D and FIG. 5E, the inside and outside of the reticle chamber 11 are sealed by the revolving door 41b, so that the inside of the exposure light path space of the light-absorbing substance is inside. It is easy to keep the state with almost no inflow into the system.

According to this embodiment, at least an amount of external gas corresponding to the difference between the internal volume of the revolving door chamber 41 and the volume of the reticle R and other internal members in the internal space S of the reticle chamber 11 is obtained. In addition, some impurity gas is mixed into the internal space S during the rotation of the revolving door 41b. However, in the present embodiment, as described above, the inflow of gas is suppressed to a small amount, and furthermore, there is no need to perform a work such as gas replacement for taking in and out of the reticle R and the like, so that there is an advantage that the throughput is further increased. If the internal pressure of the internal space S is set to be higher than that of the outside, the mixing of gas from the reticle transport system 42 can be further suppressed, and the amount of mixed gas can be positively reduced.

Nozzle-like purge gas injection port is installed inside the internal space S, and an exhaust port is installed outside the internal space S, so that a local purge gas from the inside of the internal space S to the outside is located near the revolving door 41b. The same effect can be obtained by providing a flow (dotted arrow shown in FIG. 5C). Is obtained.

In the above embodiment, only the fan-shaped revolving door chamber 41, which is a quarter of a circle, is employed, but it is also possible to use one having a plurality of revolving door chambers over the entire circle. .

Next, a fifth embodiment of the present invention will be described with reference to FIGS. 6A to 6E.

The difference between the fifth embodiment and the fourth embodiment is that the exposure apparatus of the fourth embodiment includes a rotating door chamber 41 for rotating and moving to carry in and out a reticle: R, etc. In the exposure apparatus of the fifth embodiment, as shown in FIG. 6A to FIG. 6E, the reticle transport system 51 moves the reticle R out of the internal space S of the reticle chamber 11 and the internal space. It is a point that it has an elevator room (moving room). 52 that can move up and down between the position that can be taken in and out from the inside.

The elevator room 52 of the present embodiment is vertically movably disposed in a connection portion 43 (flow path) between the reticle transfer system 51 and the internal space S, and has a top plate (wall portion) 52a and a top plate 52a. Bottom plate (wall) 5 2 b Force When reticle R is placed in a position where it can be taken in and out from inside space S (as shown in FIGS. 6A and 6B), and when reticle R can be taken in and out from inside space S When it is placed in the position (the state shown in FIG. 6D and FIG. 6E), the connecting portion 43 is closed. The elevator room 52 has a structure in which both ends in the traveling direction of the reticle R by the reticle transport system 51 are open. The connecting portion 43, which is a space in which the elevator room 52 moves up and down, is about twice the height of the elevator room 52. That is, in the present embodiment, for example, when the reticle R is carried into the internal space S of the reticle chamber 11, when the reticle R reaches the vicinity of the reticle chamber 11 or before, as shown in FIG. As described above, the elevator room 52 is moved to the upper part of the connection portion 43. The reticle R is moved on the rail 51 a of the reticle transport system 51 and stored in the elevator room 52 as shown in FIG. 6B.

Next, as shown in FIG. 6C, the elevator room 52 is moved downward together with the reticle R, and is arranged below the connection portion 43 as shown in FIG. 6D. In this state, as shown in FIG. 6E, the internal space S reticle R of the reticle chamber 11 is finally loaded. In the above-mentioned FIG. 6A and FIG. 6B, and FIG. 6D and FIG. 6E, the inside and outside of the equipment are sealed by the top plate 52a and the bottom plate 52b of the elevator room 52. Therefore, it is possible to keep the light absorbing substance hardly flowing into the internal space S.

In this embodiment, similarly to the fourth embodiment, the external gas force S, FIG. 6C, which is equivalent to the difference between the internal volume of the elevator room 52 and the volume of the reticle R and other internal members, is used. As shown in Fig. 5, it is conceivable that the liquid may enter the internal space S of the reticle room 11 while the elevator room 52 is moving. However, the inflow of gas is suppressed to a small amount, the time consumed for loading and unloading the reticle R is reduced, and the loading and unloading of the reticle R can be performed at a higher speed, so that a decrease in throughput can be reduced.

Also in this embodiment, as in the fourth embodiment, the internal space S is set to a high pressure with respect to the outside, or a purge gas ejection port is provided on the internal space S side to locally direct the gas toward the external reticle transport system 51. A simple purge gas flow (dotted arrow shown in FIG. 6C) may be formed. Next, a sixth embodiment of the present invention will be described with reference to FIGS. 7A to 7C and FIG. .

The difference between the sixth embodiment and the fifth embodiment is that, in the fifth embodiment, the height of the connecting portion 43, which is the space in which the elevator room 52 moves up and down, is about twice the height of the elevator room 52. In contrast, in the exposure apparatus of the sixth embodiment, as shown in FIG. 7A to FIG. 7C and FIG. 8, the connection between the reticle transport system 51 and the internal space S of the reticle chamber 11 is established. The height of the part 6 1 is about three times the height of the elevator room 52.

That is, in the fifth embodiment, when the elevator room 52 is moved, the reticle transport system 51 and the reticle room 11 are connected and gas may flow in, whereas in the sixth embodiment, the elevator room 7B, the reticle transport system 51 and the reticle chamber 11 are not connected by the top plate 52a and the bottom plate 52b, as shown in FIG. Therefore, the inflow of the light absorbing substance can be further reduced.

Next, a seventh embodiment of the present invention will be described with reference to FIGS. 9A to 9E.

The difference between the seventh embodiment and the fifth embodiment is that, in the fifth embodiment, the reticle R is loaded and unloaded through the elevator chamber 52 that moves up and down. In the exposure apparatus, as shown in FIGS. 9A to 9E, an outer opening / closing door 7 2 a through which a reticle R can be taken in and out from the reticle transport system 71 and a reticle from the inner space S side of the reticle chamber 11. The point is that the reticle R and the like are loaded and unloaded via the load lock chamber 72 provided with the inside opening / closing doors 72b that can take in and out the vehicle R and the like.

That is, in the present embodiment, for example, when the reticle R is carried into the internal space S of the reticle chamber 11, when the reticle R reaches the vicinity of the reticle chamber 11 or before, as shown in FIG. 9A. Then, with the inside door 72b closed, open the outside door 72a. The reticle R is moved on the renole 71 a of the reticle transport system 71 as shown in FIG. 9B and guided into the load lock chamber 72.

Next, after the reticle R is completely stored in the load lock chamber 72, the outer opening / closing door 72a is closed as shown in FIG. 9C, and the inner door is further closed as shown in FIG. 9D. Open the door 7 2 b and open the load lock chamber 72 toward the internal space S of the reticle chamber 11, and carry the reticle R into the internal space S, which is the optical path space, as shown in FIG. 9E. I do. A general load lock chamber provided for removing components inside and outside the enclosed space has a force S for removing the components after performing gas replacement inside, and in this embodiment, a reticle R is loaded. Do not perform gas replacement while stored in the lock chamber 72. In this embodiment, an amount of external gas corresponding to the difference between the internal volume of the load lock chamber 72 and the volumes of the reticle R and other internal members flows into the internal space S of the reticle chamber 11. However, the amount of gas flowing into the reticle chamber 11 or the wafer chamber 12 is minute compared to the amount of gas supplied thereto. Since the volume is very small as compared with the volume of the wafer chamber 12, a small amount of gas flows into the reticle chamber 11 or the wafer chamber 12. In general, the illumination optical system and the projection optical system have a relatively long optical path length and a small variation in the atmosphere components, while the reticle operating unit and the wafer operating unit have a relatively short optical path length and a large atmospheric variation. . For this reason, it is preferable to control the concentration of light-absorbing substances such as oxygen molecules, water molecules, and carbon dioxide molecules at lower levels in the illumination optical system and projection optical system. It is not realistic to control the concentration low. As described above, even if a small amount of gas flows in, the reticle chamber 11 or the wafer chamber 12 has a somewhat lower concentration control of the light absorbing substance than the illumination optical system and the projection optical system. Gas is allowed to flow. Therefore, compared to the case where exhaust pressure is reduced and gas is replaced in the load lock chamber 72 內, the loading and unloading of reticle R. Time can be reduced, reticle R can be loaded and unloaded at a higher speed, and a decrease in throughput can be reduced.

The present invention also includes the following embodiments.

In each of the above embodiments, the internal space S of the reticle chamber 11 or the like in which the substrate such as the reticle R and the wafer W is transferred is a vacuum-tight airtight space, and even if there is a slight gap, the internal air pressure as described above. A space that is isolated from the external space by control is included. The internal volumes of the revolving door room 41, the elevator room 52, and the load lock room 72, and the cross-sectional areas of the air shower spaces A, A1 to A3 in the first to seventh embodiments should be as small as possible. Thus, the amount of the light absorbing substance flowing into the internal space S is reduced.

In the fourth to seventh embodiments, the rotating door room, the elevator room, or the load lock chamber, which is the same as the reticle transfer system, is provided in the transfer system, and the wafer W is loaded and unloaded through these.

In each of the above embodiments, nitrogen gas, helium, and argon are used as the purge gas to be supplied to the space inside the projection optical system PL and the illumination optical system LO, but an inert gas such as neon, krypton, xenon, and radon is used. May be used.

The exposure apparatus of each of the above embodiments can be applied to a proximity exposure apparatus that exposes a mask pattern by bringing a mask and a substrate into close contact with each other instead of a reticle without using a projection optical system.

The light source of the exposure apparatus of each embodiment, F ₂ not only laser (1 5 7 nm), g-ray (4 3 6 nm), i-rays (3 6 5 nm), K r F excimer laser (2 4 8 nm), a _r F excimer laser (1 9 3 nm), it is possible to use X-rays.

The magnification of the projection optical system may be not only a reduction system but also a level shift of an equal magnification and an enlargement system. The projection optical system, when using the F ₂ laser or X-ray to the optical system of the catadioptric system or refractive system (reticle also used as a reflective type).

In each of the above embodiments, each reticle transport system of the reticle R includes a reticle transport arm. Usually, the reticle is formed of a glass material, and an oxide film such as alumite is formed on the surface of the aluminum alloy or aluminum constituting the reticle transfer arm. In other words, since the reticle and the transfer arm are made of different materials, if they come into contact with each other, peel off or rub, Moves and generates static electricity. That is, there is a possibility that at least a part of the shape of a circuit pattern formed on the reticle by vapor deposition of chromium or the like is damaged by static electricity generated when the reticle comes into contact with the transfer arm or the like.

Similarly, of the optical path space of the F ₂ laser, Te wafer chamber odor of replacing the wafer with respect to Uweha transfer arm and the wafer stage, or by contacting the wafer and or to peeling, possibility of static electricity is generated There is.

Therefore, when holding the reticle with the reticle transfer arm, a glassy or silicon oxide film of the same quality as the reticle is formed on the surface of the reticle holding section of the transfer arm, and the glassy or silicon oxide film is interposed. To hold the reticle. Alternatively, the base material of the reticle holding portion of the transfer arm is made of a material containing aluminum, a silicon oxide film is formed on the surface of the base material, and the silicon oxide film is held in contact with the reticle. By providing a vitreous or silicon oxide film of the same or similar composition to the reticle on the portion of the transfer arm that holds the reticle, water molecules are not contained or water molecules are reduced. In an inert gas atmosphere, the generation of static electricity due to the contact or separation between the reticle and the transfer arm is suppressed, and the charging of the reticle substrate can be prevented or suppressed. For this reason, it is possible to prevent the circuit pattern on the reticle from being destroyed due to charging.

Reticle base materials include crystals such as calcium fluoride, lithium fluoride, magnesium fluoride, strontium fluoride, lithium-calcium-aluminum-flowride, and lithium-strontium-aluminum-flowride and the like, and zirconium-fluoride. Fluoride glass made of palladium-lanthanum-aluminum, quartz glass doped with fluorine, quartz glass doped with hydrogen and hydrogen, quartz glass containing OH groups, quartz containing OH groups in addition to fluorine Improved quartz such as glass can be used. However, these fluorides and modified quartz can be used not only as a reticle but also as a light-transmitting optical material constituting an illumination optical system and a projection optical system.

Therefore, the same material as the above-described reticle base material can be used as the vitreous material or the material having a similar composition formed on the surface of the reticle holding portion of the transfer arm. Vitreous formed on the surface of the reticle holding part of the transfer arm, and the base material of the reticle It is not always necessary to use the same material, and any one of the above-mentioned fluoride, modified quartz, and silicon oxide film may be used.

Although the reticle transfer arm has been described, the reticle mounting surface (mounting portion) of the reticle stage can be similarly configured.

Next, a description will be given of a configuration for preventing or removing static electricity from a substrate such as a wafer.

As described above, in the exposure apparatus using F ₂ laser, the F ₂ laser in the optical path space must be an inert gas atmosphere, and F ₂ lasers is absorbed in the water molecules Mautame, inert It is managed so that water molecules do not exist in the gas as much as possible. Therefore, among the optical path space of the F ₂ laser, the wafer is conveyed to the wafer chamber or the like, static electricity is easily charged.

Therefore, the static electricity charged on the wafer can be removed by bringing the pins into contact with the surface of the wafer mounted on the wafer stage in the wafer chamber.

By using the pins as a support member for supporting the wafer on the wafer stage, static electricity can be constantly removed through the conductive portion provided on the pins without static electricity being charged on the wafer or the like. The above-mentioned pins may be used as the support member for supporting the wafer on the wafer transfer arm.

As the reticle transport system and the wafer transport system in the present embodiment, in addition to the above-mentioned arm system, any of a contact system and a non-contact system (floating transfer) may be used. In the contact method, a belt conveyance method can be used, and in the non-contact method, an electrostatic levitation method can be used. In particular, as an example of the electrostatic levitation method, an insulating substrate 2 having levitation electrodes facing the substrate and a displacement sensor for detecting a gap between each levitation electrode and the substrate are provided on a transport path. Then, the detection value obtained from the displacement sensor is compared with the target value, and the deviation is calculated to control the applied voltage to each of the floating electrodes, and the substrate is applied by applying the voltage to each of the floating electrodes. It is sucked by electrostatic attraction and held in a non-contact state for transport.

The exposure apparatus of each of the above embodiments can be applied to a step-and-repeat type exposure apparatus that exposes a pattern of a mask while the mask and the substrate are stationary and sequentially moves the substrate. The application of the exposure apparatus is not limited to the exposure apparatus for manufacturing semiconductors, for example, manufacturing an exposure apparatus for liquid crystal for exposing a liquid crystal display element pattern on a square glass plate, and manufacturing a thin film magnetic head. Can be widely applied to an exposure apparatus for the purpose.

When a linear motor is used for the reticle stage and the reticle stage, either an air levitation type using an air bearing or a magnetic levitation using Lorentz force or reactance force may be used. The stage may be a type that moves along a guide or a guideless type that does not have a guide.

When a planar motor is used as the stage driving device, one of the magnet unit (permanent magnet) and the armature unit is connected to the stage, and the other of the magnet unit and the armature unit is connected to the stage moving surface ( Base).

The reaction force generated by the movement of the wafer stage, as disclosed in _JP-A-8 Ichi丄6 6 4 7 5 JP, may be mechanically released to the floor (ground) using a frame member. The present invention is also applicable to an exposure apparatus having such a structure. The reaction force generated by the movement of the reticle stage may be mechanically released to the floor (ground) by using a frame member, as described in Japanese Patent Application Laid-Open No. 8-330224. The present invention is also applicable to an exposure apparatus having such a structure.

As described above, the exposure apparatus according to the embodiment of the present invention controls the various subsystems including the components listed in the claims of the present application to maintain the predetermined mechanical accuracy, electrical accuracy, and optical accuracy. It is manufactured by assembling. Before and after this assembly, various adjustments to achieve optical accuracy for various optical systems, adjustments to achieve mechanical accuracy for various mechanical systems, and various electrical systems before and after this assembly were performed. Adjustments are then made to achieve electrical accuracy. The process of assembling the exposure device from various subsystems includes mechanical connections, wiring connections of electric circuits, and piping connections of pneumatic circuits among the various subsystems. Prior to the process of assembling the exposure apparatus from the various subsystems, there is an individual assembly process for each subsystem. When the process of assembling the various sub-systems into the exposure apparatus is completed, comprehensive adjustments are made to ensure various precisions of the entire exposure apparatus. It is desirable to manufacture the exposure apparatus in a clean room where the temperature and cleanliness are controlled. For semiconductor devices (micro devices), as shown in FIG. 10, step 201 for designing device functions and performance, step 202 for fabricating a mask (reticle) based on this design step, silicon Step 203 of manufacturing a wafer from a material, Step 204 of exposing a reticle pattern to a wafer using the exposure apparatus of the above-described embodiment, Step of assembling depiice (including dicing, bonding, and package processes) ) Manufactured through 205, inspection step 206, etc. Industrial applicability

According to the present invention, the transfer mechanism has a gas inflow suppression mechanism that forms a gas flow for suppressing the inflow of gas from the transfer path. The inflow suppression mechanism actively prevents gas from flowing into the space from the transport path. This makes it possible to maintain a low concentration of the light-absorbing substance in the space without having to temporarily stop the transfer and without performing exhaust or gas replacement in a load lock chamber or the like between the transfer path and the space. Therefore, the circuit pattern can be reliably printed, and the manufacturing speed (throughput) of the electronic device can be increased.

Claims

The scope of the claims

1. An exposure apparatus that irradiates the substrate with exposure energy from an exposure energy source,

A housing chamber for housing the substrate,

A transport mechanism for loading the storage chamber through a transport path or transporting the storage chamber out of the storage chamber via the transport path;

A gas flow suppressing mechanism for forming a gas flow for suppressing the flow of gas from the transfer path into the storage chamber.

2. The exposure apparatus according to claim 1, wherein

The gas inflow suppression mechanism,

A gas supply port provided in the middle of the transport path, or between the transport path and the storage chamber, for supplying the gas into the transport path;

Having a gas suction port for sucking gas in the transport path,

The gas supply port is disposed between the storage chamber and the gas suction port.

3. The exposure apparatus according to claim 2, wherein

The gas supply port is provided in the transport path such that an inflow direction of the gas faces away from the storage chamber,

The gas exhaust port is provided in the transport path such that a suction direction of the gas is directed to the storage chamber side.

4. The exposure apparatus according to claim 2, wherein

The gas inflow suppression mechanism arranges a pair of the gas supply port and the gas exhaust port along a transport direction of the substrate.

5. The exposure apparatus according to claim 1, wherein

The substrate is a mask to which the exposure energy is applied via an illumination light system. And

The accommodation room has a mask stage that holds the mask.

6. The exposure apparatus according to claim 2, wherein

The substrate is a wafer to which an image of a pattern formed on the mask is transferred via a projection optical system,

The storage chamber has a wafer stage that holds the wafer.

7. An exposure apparatus that irradiates the substrate with exposure energy from an exposure energy source,

A housing chamber for housing the substrate,

And a transfer chamber having a wall for closing a gas flow path from the transfer path into the storage chamber during the loading or unloading.

8. The exposure apparatus of claim 7, wherein

The transfer chamber is a transfer chamber movably disposed between a position at which the substrate can be taken in and out of the space and a position at which the substrate can be taken in and out of the space. The flow path is closed when it is placed at a position where it can be taken in and out from the outside of the accommodation room and when it is placed at a position where it can be taken out and in from the inside of the accommodation room.

9. The exposure apparatus according to claim 8, wherein

The moving chamber is a rotating chamber that is rotatable inside and outside the storage chamber,

The rotating chamber enables the substrate to be moved in and out of the housing chamber when placed in the housing chamber, and also allows the substrate to be moved in and out of the housing chamber when positioned outside the housing chamber. .

10. The exposure apparatus according to claim 7, wherein

The wall portion includes an outside door that allows the substrate to be taken in and out from the outside of the accommodation room and an inside door that allows the substrate to be taken in and out from the inside of the accommodation room.

11. The exposure apparatus according to claim 1 or 7, wherein

The pressure in the accommodation chamber is set to a higher pressure than the outside thereof, or set to substantially the same pressure.

1 2. The exposure apparatus according to claim 1 or 7, wherein

The accommodating chamber is at least one of an accommodating chamber for accommodating a mask stage on which the mask is mounted or an accommodating chamber for accommodating the substrate stage.

The substrate is at least one of the mask or the wafer.

1 3. A board transfer device for transferring a board,

A transfer mechanism for loading the substrate into the storage chamber via a transfer path or discharging the substrate from the storage chamber through the transfer path;

14. The substrate transfer apparatus according to claim 13, wherein

Having a gas suction port for sucking gas in the transport path,

15. The substrate transfer apparatus according to claim 14, wherein

The gas supply port is provided in the transport path so that the gas inflow direction is directed in a direction away from the storage chamber,

The gas exhaust port is configured such that the suction direction of the gas is directed toward the storage chamber, It is provided on the transmission route.

1 6. A method of transporting a substrate,

Forming a gas flow between the accommodation chamber in which the substrate is accommodated, and a transport path for transporting the substrate, for suppressing inflow of gas from the transport path into the storage chamber; The substrate is transported in the flow of the gas through a transport mechanism.

1 7. The transport method according to claim 16, wherein

The gas is supplied into the transport path from the middle of the transport path or between the transport path and the storage chamber, and the gas in the transport furnace is sucked.

1 8. A micro device manufactured through a transfer process of transferring a mask pattern to a substrate,

A microdevice to which the transfer step has been performed by the exposure apparatus according to claim 1.

1 9. A method of manufacturing a micro device manufactured through a transfer step of transferring a pattern of a mask onto a substrate,

A method for manufacturing a micro device, wherein the transfer step is performed by the exposure apparatus according to claim 1 or 7.