WO2001071804A3 - Lateral asymmetric lightly doped drain mosfet - Google Patents

Lateral asymmetric lightly doped drain mosfet Download PDF

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Publication number
WO2001071804A3
WO2001071804A3 PCT/US2001/008452 US0108452W WO0171804A3 WO 2001071804 A3 WO2001071804 A3 WO 2001071804A3 US 0108452 W US0108452 W US 0108452W WO 0171804 A3 WO0171804 A3 WO 0171804A3
Authority
WO
WIPO (PCT)
Prior art keywords
doped
lightly doped
region
drain
disposed
Prior art date
Application number
PCT/US2001/008452
Other languages
French (fr)
Other versions
WO2001071804A2 (en
Inventor
Ying Xu
Dragan Danilo Nebrigic
Original Assignee
Univ Illinois
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Illinois filed Critical Univ Illinois
Priority to AU2001247485A priority Critical patent/AU2001247485A1/en
Publication of WO2001071804A2 publication Critical patent/WO2001071804A2/en
Publication of WO2001071804A3 publication Critical patent/WO2001071804A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66659—Lateral single gate silicon transistors with asymmetry in the channel direction, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823814—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A lateral, asymmetric lightly doped drain MOSFET that allows for a higher packing density, reduced on-resistance and protection from voltage punch through and many short channel effects. The lateral, asymmetric lightly doped drain MOSFET includes a semiconductor surface having a first surface and a second surface, a substantially uniformly doped source region disposed at the first surface of the substrate, a drain region disposed at the first surface of the substrate defining a channel region between the source region and the drain region, a gate dielectric material disposed on the first surface of the semiconductor and a gate disposed atop the gate dielectric material. The drain region includes a first doped section and a second doped section. The second doped section is located adjacent to the channel region and is more lightly doped than the first doped section of the drain region.
PCT/US2001/008452 2000-03-22 2001-03-16 Lateral asymmetric lightly doped drain mosfet WO2001071804A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2001247485A AU2001247485A1 (en) 2000-03-22 2001-03-16 Lateral asymmetric lightly doped drain mosfet

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US53276100A 2000-03-22 2000-03-22
US09/532,761 2000-03-22

Publications (2)

Publication Number Publication Date
WO2001071804A2 WO2001071804A2 (en) 2001-09-27
WO2001071804A3 true WO2001071804A3 (en) 2002-04-18

Family

ID=24123054

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/008452 WO2001071804A2 (en) 2000-03-22 2001-03-16 Lateral asymmetric lightly doped drain mosfet

Country Status (2)

Country Link
AU (1) AU2001247485A1 (en)
WO (1) WO2001071804A2 (en)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0535674A2 (en) * 1991-10-01 1993-04-07 Nec Corporation Method for fabricating a LDD-mosfet
US5486716A (en) * 1991-05-14 1996-01-23 Seiko Instruments Inc. Semiconductor integrated circuit device with electrostatic damage protection
US5580804A (en) * 1994-12-15 1996-12-03 Advanced Micro Devices, Inc. Method for fabricating true LDD devices in a MOS technology
US5705439A (en) * 1996-04-22 1998-01-06 Taiwan Semiconductor Manufacturing Company Ltd. Method to make an asymmetrical LDD structure for deep sub-micron MOSFETS
US5780912A (en) * 1994-08-18 1998-07-14 Sun Microsystems, Inc. Asymmetric low power MOS devices
US5920103A (en) * 1997-06-20 1999-07-06 Advanced Micro Devices, Inc. Asymmetrical transistor having a gate dielectric which is substantially resistant to hot carrier injection
US5963809A (en) * 1997-06-26 1999-10-05 Advanced Micro Devices, Inc. Asymmetrical MOSFET with gate pattern after source/drain formation

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5486716A (en) * 1991-05-14 1996-01-23 Seiko Instruments Inc. Semiconductor integrated circuit device with electrostatic damage protection
EP0535674A2 (en) * 1991-10-01 1993-04-07 Nec Corporation Method for fabricating a LDD-mosfet
US5780912A (en) * 1994-08-18 1998-07-14 Sun Microsystems, Inc. Asymmetric low power MOS devices
US5580804A (en) * 1994-12-15 1996-12-03 Advanced Micro Devices, Inc. Method for fabricating true LDD devices in a MOS technology
US5705439A (en) * 1996-04-22 1998-01-06 Taiwan Semiconductor Manufacturing Company Ltd. Method to make an asymmetrical LDD structure for deep sub-micron MOSFETS
US5920103A (en) * 1997-06-20 1999-07-06 Advanced Micro Devices, Inc. Asymmetrical transistor having a gate dielectric which is substantially resistant to hot carrier injection
US5963809A (en) * 1997-06-26 1999-10-05 Advanced Micro Devices, Inc. Asymmetrical MOSFET with gate pattern after source/drain formation

Also Published As

Publication number Publication date
WO2001071804A2 (en) 2001-09-27
AU2001247485A1 (en) 2001-10-03

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