WO2001067563A3 - Coupled cavity high power semiconductor laser - Google Patents

Coupled cavity high power semiconductor laser Download PDF

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Publication number
WO2001067563A3
WO2001067563A3 PCT/US2001/007230 US0107230W WO0167563A3 WO 2001067563 A3 WO2001067563 A3 WO 2001067563A3 US 0107230 W US0107230 W US 0107230W WO 0167563 A3 WO0167563 A3 WO 0167563A3
Authority
WO
WIPO (PCT)
Prior art keywords
active
mirror
high power
gain region
substrate
Prior art date
Application number
PCT/US2001/007230
Other languages
French (fr)
Other versions
WO2001067563A9 (en
WO2001067563A2 (en
Inventor
Aram Mooradian
Original Assignee
Novalux Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Novalux Inc filed Critical Novalux Inc
Priority to JP2001566229A priority Critical patent/JP4487085B2/en
Priority to EP01934849A priority patent/EP1264374B1/en
Priority to DE60142029T priority patent/DE60142029D1/en
Priority to AT01934849T priority patent/ATE467253T1/en
Priority to AU2001260997A priority patent/AU2001260997A1/en
Publication of WO2001067563A2 publication Critical patent/WO2001067563A2/en
Publication of WO2001067563A3 publication Critical patent/WO2001067563A3/en
Publication of WO2001067563A9 publication Critical patent/WO2001067563A9/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H01S2301/166—Single transverse or lateral mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H01S3/109—Frequency multiplication, e.g. harmonic generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0207—Substrates having a special shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1021—Coupled cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18355—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a defined polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18388—Lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity

Abstract

An active gain region sandwiched between a 100 % reflective bottom Bragg mirror and an intermediate partially reflecting Bragg mirror is formed on a lower surface of a supporting substrate, to thereby provide the first ('active') resonator cavity of a high power coupled cavity surface emitting laser device. The reflectivity of the intermediate mirror is kept low enough so that laser oscillatin within the active gain region will not occur. The substrate is entirely outside the first active resonator cavity to a level sufficient to cause lasing. The substrate is entirely outside the active cavity but is contained within a second ('passive') resonator cavity defined by the intermediate mirror and a partially reflecting output mirror, where it is subjected to only a fraction of the light intensity that is circulating in the gain region.
PCT/US2001/007230 2000-03-06 2001-03-06 Coupled cavity high power semiconductor laser WO2001067563A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2001566229A JP4487085B2 (en) 2000-03-06 2001-03-06 Linked cavity high power semiconductor laser
EP01934849A EP1264374B1 (en) 2000-03-06 2001-03-06 Coupled cavity high power semiconductor laser
DE60142029T DE60142029D1 (en) 2000-03-06 2001-03-06 HIGH-PERFORMANCE SEMICONDUCTOR LASER WITH COUPLED RESONATOR
AT01934849T ATE467253T1 (en) 2000-03-06 2001-03-06 HIGH POWER SEMICONDUCTOR LASER WITH COUPLED RESONATOR
AU2001260997A AU2001260997A1 (en) 2000-03-06 2001-03-06 Coupled cavity high power semiconductor laser

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/519,890 2000-03-06
US09/519,890 US6778582B1 (en) 2000-03-06 2000-03-06 Coupled cavity high power semiconductor laser

Publications (3)

Publication Number Publication Date
WO2001067563A2 WO2001067563A2 (en) 2001-09-13
WO2001067563A3 true WO2001067563A3 (en) 2002-04-25
WO2001067563A9 WO2001067563A9 (en) 2003-01-03

Family

ID=24070248

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/007230 WO2001067563A2 (en) 2000-03-06 2001-03-06 Coupled cavity high power semiconductor laser

Country Status (7)

Country Link
US (2) US6778582B1 (en)
EP (1) EP1264374B1 (en)
JP (2) JP4487085B2 (en)
AT (1) ATE467253T1 (en)
AU (1) AU2001260997A1 (en)
DE (1) DE60142029D1 (en)
WO (1) WO2001067563A2 (en)

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Also Published As

Publication number Publication date
JP4487085B2 (en) 2010-06-23
JP2007235163A (en) 2007-09-13
ATE467253T1 (en) 2010-05-15
US20050002433A1 (en) 2005-01-06
AU2001260997A1 (en) 2001-09-17
WO2001067563A9 (en) 2003-01-03
US6898225B2 (en) 2005-05-24
DE60142029D1 (en) 2010-06-17
WO2001067563A2 (en) 2001-09-13
EP1264374A2 (en) 2002-12-11
EP1264374B1 (en) 2010-05-05
JP2003526930A (en) 2003-09-09
US6778582B1 (en) 2004-08-17

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