WO2001063763A2 - Drive circuit and method for mosfet - Google Patents

Drive circuit and method for mosfet Download PDF

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Publication number
WO2001063763A2
WO2001063763A2 PCT/ZA2001/000024 ZA0100024W WO0163763A2 WO 2001063763 A2 WO2001063763 A2 WO 2001063763A2 ZA 0100024 W ZA0100024 W ZA 0100024W WO 0163763 A2 WO0163763 A2 WO 0163763A2
Authority
WO
WIPO (PCT)
Prior art keywords
insulated gate
triggering circuit
fast switching
mosfet
state
Prior art date
Application number
PCT/ZA2001/000024
Other languages
French (fr)
Other versions
WO2001063763A3 (en
Inventor
Barend Visser
Original Assignee
Potchefstroom University For Christian Higher Education
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Potchefstroom University For Christian Higher Education filed Critical Potchefstroom University For Christian Higher Education
Priority to ES01918992.7T priority Critical patent/ES2593907T3/en
Priority to AU2001246004A priority patent/AU2001246004A1/en
Priority to EP01918992.7A priority patent/EP1264402B1/en
Priority to JP2001562839A priority patent/JP2003524982A/en
Publication of WO2001063763A2 publication Critical patent/WO2001063763A2/en
Publication of WO2001063763A3 publication Critical patent/WO2001063763A3/en
Priority to US10/226,099 priority patent/US6870405B2/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B13/00—Oxygen; Ozone; Oxides or hydroxides in general
    • C01B13/10—Preparation of ozone
    • C01B13/11—Preparation of ozone by electric discharge
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B13/00—Oxygen; Ozone; Oxides or hydroxides in general
    • C01B13/10—Preparation of ozone
    • C01B13/11—Preparation of ozone by electric discharge
    • C01B13/115—Preparation of ozone by electric discharge characterised by the electrical circuits producing the electrical discharge
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors

Definitions

  • This invention relates to a circuit and method for improving the switching speed of insulated gate semiconductor devices such as metal oxide field effect transistors (MOSFET's) , more particularly power MOSFET's.
  • MOSFET's metal oxide field effect transistors
  • Capacitance inherent in transistor junctions limits the speed at which a voltage within a circuit can switch. It is also well known that the Miller effect has an influence on the capacitance at the gate of devices of the aforementioned kind.
  • Prior art teaches a number of methods of alleviating the Miller effect in high frequency transistor switching circuits, for example by reducing source impedance or reducing feedback capacitance, or both.
  • IRF740 typically switches through 200 volts in a rise time of approximately 27ns at a peak current of 1 0 amperes and in a fall time of approximately 24ns. These times may be too long for many applications.
  • a triggering circuit for an insulated gate semiconductor device comprising as a first terminal a gate and further comprising at least a second and a third terminal, the circuit comprising: - a charge storage device and a fast switching means connected in a circuit to the gate of the device; the fast switching means being able to switch between an off and an on state in a first time period shorter than a specified turn-on delay time of the insulated gate device; and - the fast switching means being controllable to move charge between the storage device and the gate of the insulated gate device, so that the insulated gate device switches between an off state and an on state in a second time period shorter than a specified rise time or fall time for the insulated gate device.
  • the insulated gate semiconductor device may be a metal oxide semiconductor field effect transistor (MOSFET), such as a power MOSFET.
  • MOSFET metal oxide semiconductor field effect transistor
  • the insulated gate semiconductor device may be an insulated gate bipolar transistor.
  • the first time period is preferably shorter than 2ns.
  • the fast switching means may comprise one of: a SIDAC, a break- over diode, a bipolar transistor, another insulated gate semiconductor device and a high voltage fast switching device.
  • the specified turn-on time is typically a minimum turn-on time specified in a publicly available data sheet relating to the insulated gate semiconductor device.
  • the fast switching means may be electronically controllable.
  • the charge storage device may be a capacitor.
  • the insulated gate semiconductor device may switch from the off state to the on state as well as from the on state to the off state in periods shorter than specified rise and fall times respectively.
  • An inductor may be provided in the circuit between the fast switching means and the gate.
  • the triggering circuit may be integrated on a single chip.
  • the chip may further comprise additional circuitry also integrated thereon.
  • a method of driving an insulated gate semiconductor device comprises the steps of: utilizing a fast switching means to transfer charge to a gate of the device; switching the fast switching means on in a first time period shorter than a specified turn-on delay time of the insulated gate device; moving charge to and from the gate to cause the insulated gate device to switch between an off and an on state in a second time period shorter than a specified rise time or fall time for the insulated gate device.
  • figure 1 is a basic circuit diagram of a triggering circuit according to the invention for a MOSFET
  • figure 2 is a diagram of one embodiment of the circuit comprising a SIDAC as fast switching device
  • figure 3 includes a diagram in dotted lines of gate voltage against time of normal specified operation of the MOSFET and a diagram in solid lines of operation according to the method of the invention
  • figure 4 includes a diagram in dotted lines of gate current against time of normal specified operation of the MOSFET and a diagram in solid lines of operation according to the method of the invention
  • figure 5 is a diagram of another embodiment of the circuit according to the invention
  • figure 6 is a waveform of voltage against time at a first terminal of a charge storage capacitor in figure 5
  • figure 7 is a waveform of voltage against time at the source of the MOSFET in figure 5
  • figure 8 is a diagram of a triggering circuit for an insulated gate bipolar transistor
  • figure 9 is a waveform of voltage against time at a first
  • FIG 1 there is shown a basic diagram of a triggering circuit 1 0 according to the invention for an insulated gate semiconductor device 1 2 such as a metal oxide semiconductor field effect transistor (MOSFET) .
  • MOSFET metal oxide semiconductor field effect transistor
  • a power MOSFET is shown and which is available from International Rectifier under the trademark HEXFET number IRF740.
  • a 1 0% to 90% rise time of an output voltage is specified in publicly available user data sheets of the device as being about 27ns and a corresponding fall time is specified as being in the order of 24ns. These times may be too long for some applications of the MOSFET.
  • the turn-on delay time is specified at 1 4ns and the turn- off delay time as 50ns.
  • the triggering circuit 1 0 comprises a charge storage device in the form of a capacitor 14 having first and second terminals 14.1 and 14.2 respectively.
  • the first terminal 14.1 is connected in a circuit 1 7 to a fast switching device 1 6.
  • An optional inductor 1 8 is connected between the fast switching device 1 6 and a gate 20 of the MOSFET.
  • the drain and source of the MOSFET are shown at 22 and 24 respectively.
  • the fast switching device 1 6 may be any suitable device having a switching speed faster than the data sheet specified turn-on delay time and/or turn-off delay time of the MOSFET, preferably better than 2ns.
  • Such devices may include a SIDAC, a break-over diode, a suitably configured bipolar transistor arrangement, or any other suitable fast switching device or circuit.
  • the fast switching device is switched on electronically which rapidly transfers sufficient charge from the capacitor 1 4 to the gate 20 of the MOSFET, to switch the MOSFET on.
  • Time diagrams for the circuit in figure 1 are shown in figures 3 and 4.
  • the diagrams in broken lines indicate normal specified operation of the MOSFET 1 2.
  • diagram 30 in figure 3 shows the gate voltage of the MOSFET during conventional switching on.
  • the MOSFET is switched on at 32 and the diagram illustrates a turn-on delay time of about 34ns.
  • the associated gate current is shown at 34 in figure 4.
  • the associated current at the gate 20 is shown at 38 in figure 4. Initially, during the charge transfer stage, the gate current is high and thereafter it drops to a negligible level. It is also believed that
  • FIG 2 a circuit diagram of the triggering circuit 1 0 is shown
  • the first switching device 1 6 is a SIDAC.
  • a periodic voltage is applied across a capacitor 1 4, in parallel with a
  • the gate voltage may for short intervals be driven approximately three to four times beyond the maximum threshold rating of some MOSFET's 1 2 without destroying the device.
  • the gate voltage of the MOSFET 1 2 drops to substantially below the threshold voltage of the MOSFET 1 2 shortly after the charge dissipates from the gate 20 of the MOSFET 1 2. As a result, the MOSFET 1 2 will turn off and the drain current will no longer flow.
  • the fast switching means 1 6 comprises a bipolar transistor arrangement.
  • the voltage waveform at 50 is shown in figure 6.
  • the voltage waveform at source 24 is shown in figure 7. From the latter waveform it can be seen at 52 that the source 24 of the aforementioned MOSFET 1 2 switches between an "off -state to an " on"-state through about 400V in a rise time t r of about 4ns, which is substantially quicker than the specified rise time of 27ns.
  • t f of about 1 5ns, which is also substantially shorter than a specified fall time of about 24ns.
  • the same triggering circuit 1 0 is shown for an insulated gate bipolar transistor 60 having a gate 62, a collector 64 and an emitter 66.
  • the transistor is an IRG4PC50W device which is being manufactured and sold by International Rectifier.
  • the waveform at 68 in figure 8 is shown in figure 9 and the waveform at emitter 66 adjacent load 70 is shown in figure 1 0.
  • the emitter 66 switches between an " off -state and an " on" -state through about 400V in a rise time t r of about 4ns, which is substantially less than a specified rise time of 33ns.
  • the switching means comprises a low output impedance, high voltage, fast switching driving circuit 1 1 6.
  • the device 1 1 6 must be able to switch between OV and Vd in a first time period shorter than a specified turn-on delay time of the device 1 2.
  • Vd is preferably bigger than 20xVt. Devices of this nature are available on the market.

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)

Abstract

A triggering circuit (10)for an insulated gate semiconductor device such as a MOSFET (12) comprises a charge storage device (14) and a fast switching device (16) connected in a circuit to a gate (20) of the MOSFET. The fast switching device is able to switch between an off and an on state in a first time period shorter than a specified turn-on delay time of the MOSFET and the fast switching device is further controllable to move charge between the storage device and the gate, so that the MOSFET switches between an off state and an on state in a second time period shorter than a specified rise time or fall time for the MOSFET.

Description

DRIVE CIRCUIT AND METHOD FOR MOSFET
TECHNICAL FIELD
This invention relates to a circuit and method for improving the switching speed of insulated gate semiconductor devices such as metal oxide field effect transistors (MOSFET's) , more particularly power MOSFET's.
BACKGROUND ART Capacitance inherent in transistor junctions limits the speed at which a voltage within a circuit can switch. It is also well known that the Miller effect has an influence on the capacitance at the gate of devices of the aforementioned kind.
Prior art teaches a number of methods of alleviating the Miller effect in high frequency transistor switching circuits, for example by reducing source impedance or reducing feedback capacitance, or both.
Even with such improvements, an output of a MOSFET such as an
IRF740 typically switches through 200 volts in a rise time of approximately 27ns at a peak current of 1 0 amperes and in a fall time of approximately 24ns. These times may be too long for many applications.
OBJECT OF THE INVENTION Accordingly, it is an object of the present invention to provide a triggering circuit and method for improving the rise and/or fall times of insulated gate semiconductor devices with which the applicant believes the aforementioned disadvantages will at least be alleviated.
SUMMARY OF THE INVENTION
According to the invention there is provided a triggering circuit for an insulated gate semiconductor device comprising as a first terminal a gate and further comprising at least a second and a third terminal, the circuit comprising: - a charge storage device and a fast switching means connected in a circuit to the gate of the device; the fast switching means being able to switch between an off and an on state in a first time period shorter than a specified turn-on delay time of the insulated gate device; and - the fast switching means being controllable to move charge between the storage device and the gate of the insulated gate device, so that the insulated gate device switches between an off state and an on state in a second time period shorter than a specified rise time or fall time for the insulated gate device.
The insulated gate semiconductor device may be a metal oxide semiconductor field effect transistor (MOSFET), such as a power MOSFET.
Alternatively, the insulated gate semiconductor device may be an insulated gate bipolar transistor.
The first time period is preferably shorter than 2ns.
The fast switching means may comprise one of: a SIDAC, a break- over diode, a bipolar transistor, another insulated gate semiconductor device and a high voltage fast switching device.
The specified turn-on time is typically a minimum turn-on time specified in a publicly available data sheet relating to the insulated gate semiconductor device.
The fast switching means may be electronically controllable. The charge storage device may be a capacitor.
The insulated gate semiconductor device may switch from the off state to the on state as well as from the on state to the off state in periods shorter than specified rise and fall times respectively.
An inductor may be provided in the circuit between the fast switching means and the gate.
The triggering circuit may be integrated on a single chip.
The chip may further comprise additional circuitry also integrated thereon.
According to another aspect of the invention, a method of driving an insulated gate semiconductor device comprises the steps of: utilizing a fast switching means to transfer charge to a gate of the device; switching the fast switching means on in a first time period shorter than a specified turn-on delay time of the insulated gate device; moving charge to and from the gate to cause the insulated gate device to switch between an off and an on state in a second time period shorter than a specified rise time or fall time for the insulated gate device.
BRIEF DESCRIPTION OF THE DRAWINGS
The invention will now be described, by way of example only, with reference to the accompanying drawings wherein: figure 1 is a basic circuit diagram of a triggering circuit according to the invention for a MOSFET; figure 2 is a diagram of one embodiment of the circuit comprising a SIDAC as fast switching device; figure 3 includes a diagram in dotted lines of gate voltage against time of normal specified operation of the MOSFET and a diagram in solid lines of operation according to the method of the invention; figure 4 includes a diagram in dotted lines of gate current against time of normal specified operation of the MOSFET and a diagram in solid lines of operation according to the method of the invention; figure 5 is a diagram of another embodiment of the circuit according to the invention; figure 6 is a waveform of voltage against time at a first terminal of a charge storage capacitor in figure 5; figure 7 is a waveform of voltage against time at the source of the MOSFET in figure 5; figure 8 is a diagram of a triggering circuit for an insulated gate bipolar transistor; figure 9 is a waveform of voltage against time at a first terminal of a charge storage capacitor in the circuit in figure 8; figure 1 0 is a waveform of voltage against time at an emitter of the transistor in figure 8; and figure 1 1 is a basic circuit diagram of yet another embodiment of the triggering circuit.
DESCRIPTION OF A PREFERRED EMBODIMENT OF THE INVENTION In figure 1 , there is shown a basic diagram of a triggering circuit 1 0 according to the invention for an insulated gate semiconductor device 1 2 such as a metal oxide semiconductor field effect transistor (MOSFET) .
In the diagram a power MOSFET is shown and which is available from International Rectifier under the trademark HEXFET number IRF740. A 1 0% to 90% rise time of an output voltage is specified in publicly available user data sheets of the device as being about 27ns and a corresponding fall time is specified as being in the order of 24ns. These times may be too long for some applications of the MOSFET. The turn-on delay time is specified at 1 4ns and the turn- off delay time as 50ns.
The triggering circuit 1 0 comprises a charge storage device in the form of a capacitor 14 having first and second terminals 14.1 and 14.2 respectively. The first terminal 14.1 is connected in a circuit 1 7 to a fast switching device 1 6. An optional inductor 1 8 is connected between the fast switching device 1 6 and a gate 20 of the MOSFET. The drain and source of the MOSFET are shown at 22 and 24 respectively.
The fast switching device 1 6 may be any suitable device having a switching speed faster than the data sheet specified turn-on delay time and/or turn-off delay time of the MOSFET, preferably better than 2ns. Such devices may include a SIDAC, a break-over diode, a suitably configured bipolar transistor arrangement, or any other suitable fast switching device or circuit. To switch the MOSFET on, the fast switching device is switched on electronically which rapidly transfers sufficient charge from the capacitor 1 4 to the gate 20 of the MOSFET, to switch the MOSFET on.
Time diagrams for the circuit in figure 1 are shown in figures 3 and 4. The diagrams in broken lines indicate normal specified operation of the MOSFET 1 2. Hence, diagram 30 in figure 3 shows the gate voltage of the MOSFET during conventional switching on. The MOSFET is switched on at 32 and the diagram illustrates a turn-on delay time of about 34ns. The associated gate current is shown at 34 in figure 4.
The diagrams for the method according to the invention are shown at 36 and 38 in figures 3 and 4 respectively. At 40 in figure 3, the aforementioned rapid transfer of charge from capacitor 14 through switch 1 6 and consequent build up of voltage on the gate of the MOSFET are shown. The subsequent fall in the gate voltage shown at 42 is attributable to the aforementioned Miller effect. What is clear though is that the device switches on at 44, after a mere 4ns.
The associated current at the gate 20 is shown at 38 in figure 4. Initially, during the charge transfer stage, the gate current is high and thereafter it drops to a negligible level. It is also believed that
with drain currents within the data specification of the MOSFET,
switching losses with the switching method and circuit according to
the invention are also reduced.
The value (C) of the capacitor 14, the voltage (Vc) required on the
capacitor before switching and hence the breakthrough voltage of
the switching device 1 6, the gate threshold voltage (Vt) of the
MOSFET 1 2 and the gate charge (Qs) required for complete
switching of the MOSFET are related according to the following
C Vc equation > Vt .
(Qs/Vt + C)
In figure 2 a circuit diagram of the triggering circuit 1 0 is shown
wherein the first switching device 1 6 is a SIDAC.
A periodic voltage is applied across a capacitor 1 4, in parallel with a
SIDAC 1 6 and a MOSFET 1 2. Initially, during a first half cycle, the
voltage supplied at the input 1 9 is insufficient to switch the SIDAC
1 4 on and the capacitor 1 2 is hence charged up. When the supplied
voltage reaches the threshold of the SIDAC 1 6 it switches on,
resulting in a closed circuit from the capacitor 1 4 to the gate 20 of the MOSFET 1 2, partially discharging the capacitor 14 and hence charging the gate 20. The result is that a charge will now be shared between the capacitor 1 4 and the gate 20, so that some voltage, preferably above the gate threshold voltage relative to ground, is applied to the gate.
Using this method, the gate voltage may for short intervals be driven approximately three to four times beyond the maximum threshold rating of some MOSFET's 1 2 without destroying the device.
Similarly, when during the other half cycle the gate voltage exceeds the reverse threshold of the SIDAC 1 6 and current is conducted in the opposite direction, the gate voltage of the MOSFET 1 2 drops to substantially below the threshold voltage of the MOSFET 1 2 shortly after the charge dissipates from the gate 20 of the MOSFET 1 2. As a result, the MOSFET 1 2 will turn off and the drain current will no longer flow.
In figure 5, an alternative and self-oscillating triggering circuit for the MOSFET 1 2 is shown. Components thereof corresponding to components of the circuits in figures 1 and 2 are designated utilizing like reference numerals. In this embodiment, the fast switching means 1 6 comprises a bipolar transistor arrangement. The voltage waveform at 50 is shown in figure 6. The voltage waveform at source 24 is shown in figure 7. From the latter waveform it can be seen at 52 that the source 24 of the aforementioned MOSFET 1 2 switches between an "off -state to an " on"-state through about 400V in a rise time tr of about 4ns, which is substantially quicker than the specified rise time of 27ns. Similarly, and as shown at 54 it switches from the " on"-state to the "off -state in a fall time tf of about 1 5ns, which is also substantially shorter than a specified fall time of about 24ns.
In figure 8, the same triggering circuit 1 0 is shown for an insulated gate bipolar transistor 60 having a gate 62, a collector 64 and an emitter 66. The transistor is an IRG4PC50W device which is being manufactured and sold by International Rectifier. The waveform at 68 in figure 8 is shown in figure 9 and the waveform at emitter 66 adjacent load 70 is shown in figure 1 0.
From the latter waveform it can be seen at 72 that the emitter 66 switches between an " off -state and an " on" -state through about 400V in a rise time tr of about 4ns, which is substantially less than a specified rise time of 33ns.
In figure 1 1 a further embodiment of the triggering circuit is shown. The switching means comprises a low output impedance, high voltage, fast switching driving circuit 1 1 6. The device 1 1 6 must be able to switch between OV and Vd in a first time period shorter than a specified turn-on delay time of the device 1 2. Vd is preferably bigger than 20xVt. Devices of this nature are available on the market.
It will be appreciated that there are many variations in detail on the triggering circuit and method according to the invention, without departing from the scope and spirit of the appended claims.

Claims

CLAIMS:
1 . A triggering circuit for an insulated gate semiconductor device comprising as a first terminal a gate and further comprising at least a second and a third terminal, the circuit comprising: a charge storage device and a fast switching means connected in a circuit to the gate of the device; the fast switching means being able to switch between an off and an on state in a first time period shorter than a specified turn-on delay time of the insulated gate device; and - the fast switching means being controllable to move charge between the storage device and the gate of the insulated gate device, so that the insulated gate device switches between an off state and an on state in a second time period shorter than a specified rise time or fall time for the insulated gate device.
2. A triggering circuit as claimed in claim 1 wherein the insulated gate semiconductor device is a metal oxide semiconductor field effect transistor (MOSFET).
3. A triggering circuit as claimed in claim 2 wherein the MOSFET is a power MOSFET.
4. A triggering circuit as claimed in claim 1 wherein the insulated gate semiconductor device is an insulated gate bipolar transistor.
5. A triggering circuit as claimed in any one of the preceding claims wherein the first time period is shorter than 2ns.
6. A triggering circuit as claimed in any one of claims 1 to 5 wherein the fast switching means comprises one of: a SIDAC, a break-over diode, a bipolar transistor, another insulated gate semiconductor device and a high voltage fast switching device.
7. A triggering circuit as claimed in any one of claims 1 to 6 wherein the specified turn-on time is a minimum turn-on time specified in a data sheet relating to the insulated gate semiconductor device.
8. A triggering circuit as claimed in any one of claims 1 to 7 wherein the fast switching means is electronically controllable.
9. A triggering circuit as claimed in any one of the preceding claims wherein the charge storage device is a capacitor.
1 0. A triggering circuit as claimed in any of the preceding claims wherein the insulated gate semiconductor device switches from the off state to the on state as well as from the on state to the off state in periods shorter than specified rise and fall times respectively.
1 1 . A triggering circuit as claimed in any one of claims 1 to 1 0 comprising an inductor between the fast switching means and the gate.
1 2. A triggering circuit as claimed in any one of claims 1 to 1 1 which is integrated on a single chip.
3. A triggering circuit as claimed in claim 1 2 wherein the chip comprises additional circuitry also integrated thereon.
4. A method of driving an insulated gate semiconductor device comprising the steps of: utilizing a fast switching means to transfer charge to or from a gate of the device; switching the fast switching means on in a first time period shorter than a specified turn-on delay time of the insulated gate device; moving charge to or from the gate to cause the insulated gate device to switch between an off and an on state in a second time period shorter than a specified rise time or fall time for the insulated gate device.
5. A triggering circuit for an insulated gate semiconductor device substantially as herein described with reference to the accompanying diagrams.
6. A method of driving an insulated gate semiconductor device substantially as herein described with reference to the accompanying diagrams.
PCT/ZA2001/000024 1999-02-24 2001-02-23 Drive circuit and method for mosfet WO2001063763A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
ES01918992.7T ES2593907T3 (en) 2000-02-23 2001-02-23 Circuit and drive procedure for MOSFET
AU2001246004A AU2001246004A1 (en) 2000-02-23 2001-02-23 Drive circuit and method for mosfet
EP01918992.7A EP1264402B1 (en) 2000-02-23 2001-02-23 Drive circuit and method for mosfet
JP2001562839A JP2003524982A (en) 2000-02-23 2001-02-23 Driver circuit and method for MOSFET
US10/226,099 US6870405B2 (en) 1999-02-24 2002-08-22 Method for driving an insulated gate semiconductor device using a short duration pulse

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
ZA2000/0887 2000-02-23
ZA200000887 2000-02-23

Related Child Applications (4)

Application Number Title Priority Date Filing Date
US09914199 Continuation-In-Part 2000-02-24
US09/914,199 A-371-Of-International US7067102B1 (en) 1999-02-24 2000-02-24 Method and apparatus for producing ozone
PCT/ZA2000/000031 Continuation-In-Part WO2000050338A1 (en) 1999-02-24 2000-02-24 Method and apparatus for producing ozone
US10/226,099 Continuation-In-Part US6870405B2 (en) 1999-02-24 2002-08-22 Method for driving an insulated gate semiconductor device using a short duration pulse

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Publication Number Publication Date
WO2001063763A2 true WO2001063763A2 (en) 2001-08-30
WO2001063763A3 WO2001063763A3 (en) 2002-06-13

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JP (1) JP2003524982A (en)
CN (1) CN1522495A (en)
AU (1) AU2001246004A1 (en)
ES (1) ES2593907T3 (en)
WO (1) WO2001063763A2 (en)

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Publication number Priority date Publication date Assignee Title
WO2004075405A2 (en) * 2003-02-18 2004-09-02 Siemens Aktiengesellschaft Operating a half-bridge, especially a field effect transistor half-bridge
WO2004075405A3 (en) * 2003-02-18 2006-09-14 Siemens Ag Operating a half-bridge, especially a field effect transistor half-bridge
US7332942B2 (en) 2003-02-18 2008-02-19 Siemens Aktiengesellschaft Operation of a half-bridge, in particular a field-effect transistor half-bridge

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JP2003524982A (en) 2003-08-19
EP3096455A1 (en) 2016-11-23
AU2001246004A1 (en) 2001-09-03
WO2001063763A3 (en) 2002-06-13
EP1264402B1 (en) 2016-06-15
ES2593907T3 (en) 2016-12-14
CN1522495A (en) 2004-08-18
EP1264402A2 (en) 2002-12-11

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