WO2001057939A2 - Semi-conducteur hybride organique-inorganique et procede de fabrication - Google Patents
Semi-conducteur hybride organique-inorganique et procede de fabrication Download PDFInfo
- Publication number
- WO2001057939A2 WO2001057939A2 PCT/IL2001/000058 IL0100058W WO0157939A2 WO 2001057939 A2 WO2001057939 A2 WO 2001057939A2 IL 0100058 W IL0100058 W IL 0100058W WO 0157939 A2 WO0157939 A2 WO 0157939A2
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- molecules
- molecule
- semiconductor resistor
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 67
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 238000000034 method Methods 0.000 title claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 33
- 239000002184 metal Substances 0.000 claims description 33
- 125000000524 functional group Chemical group 0.000 claims description 31
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- 230000006870 function Effects 0.000 claims description 9
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- 238000000576 coating method Methods 0.000 claims description 7
- 150000002739 metals Chemical class 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 239000002041 carbon nanotube Substances 0.000 claims description 6
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- 230000005641 tunneling Effects 0.000 description 5
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- 239000000178 monomer Substances 0.000 description 4
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 4
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 150000007942 carboxylates Chemical class 0.000 description 2
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- 238000009826 distribution Methods 0.000 description 2
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- 229910052733 gallium Inorganic materials 0.000 description 2
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- 235000021317 phosphate Nutrition 0.000 description 2
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- 229910052710 silicon Inorganic materials 0.000 description 2
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- 239000002356 single layer Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical class C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 1
- 239000003155 DNA primer Substances 0.000 description 1
- BWGNESOTFCXPMA-UHFFFAOYSA-N Dihydrogen disulfide Chemical compound SS BWGNESOTFCXPMA-UHFFFAOYSA-N 0.000 description 1
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- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- JQRLYSGCPHSLJI-UHFFFAOYSA-N [Fe].N1C(C=C2N=C(C=C3NC(=C4)C=C3)C=C2)=CC=C1C=C1C=CC4=N1 Chemical compound [Fe].N1C(C=C2N=C(C=C3NC(=C4)C=C3)C=C2)=CC=C1C=C1C=CC4=N1 JQRLYSGCPHSLJI-UHFFFAOYSA-N 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 238000013528 artificial neural network Methods 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000004630 atomic force microscopy Methods 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
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- 239000003989 dielectric material Substances 0.000 description 1
- WNAHIZMDSQCWRP-UHFFFAOYSA-N dodecane-1-thiol Chemical compound CCCCCCCCCCCCS WNAHIZMDSQCWRP-UHFFFAOYSA-N 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000005421 electrostatic potential Methods 0.000 description 1
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- 229910003472 fullerene Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
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- 239000012212 insulator Substances 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
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- 238000005329 nanolithography Methods 0.000 description 1
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- 239000002773 nucleotide Substances 0.000 description 1
- 125000003729 nucleotide group Chemical group 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- -1 phenylene-ethynylene Chemical group 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 125000002467 phosphate group Chemical group [H]OP(=O)(O[H])O[*] 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000013612 plasmid Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000013615 primer Substances 0.000 description 1
- 102000004169 proteins and genes Human genes 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002109 single walled nanotube Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229920001059 synthetic polymer Polymers 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/701—Organic molecular electronic devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Thin Film Transistor (AREA)
Abstract
La présente invention concerne un semi-conducteur hybride organique-inorganique et son procédé de fabrication. A cet effet, on fabrique une résistance semi-conductrice sous forme d'une structure faite d'une couche électro-conductrice revêtue d'une couche isolante, la conductivité de la résistance semi-conductrice étant fonction de son potentiel de surface. Deux plots électro-conducteurs sont formés sur la surface de la résistance semi-conductrice de façon à faire contact avec la couche électro-conductrice. L'invention concerne également des pavés de grille isolés de la couche électro-conductrice par la couche isolante, et des molécules polyvalentes organiques identiques, qui forment des ponts moléculaires entre la surface de la résistance semi-conductrice et la pluralité desdits pavés de grille.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AU2001227025A AU2001227025A1 (en) | 2000-01-31 | 2001-01-22 | A hybrid organic-inorganic semiconductor device and a method of its fabrication |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IL13429500A IL134295A0 (en) | 2000-01-31 | 2000-01-31 | A hybrid organic-inorganic semiconductor device and a method of its fabrication |
| IL134295 | 2000-01-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO2001057939A2 true WO2001057939A2 (fr) | 2001-08-09 |
| WO2001057939A3 WO2001057939A3 (fr) | 2002-01-17 |
Family
ID=11073762
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/IL2001/000058 WO2001057939A2 (fr) | 2000-01-31 | 2001-01-22 | Semi-conducteur hybride organique-inorganique et procede de fabrication |
Country Status (3)
| Country | Link |
|---|---|
| AU (1) | AU2001227025A1 (fr) |
| IL (1) | IL134295A0 (fr) |
| WO (1) | WO2001057939A2 (fr) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1425411A2 (fr) * | 1999-06-07 | 2004-06-09 | YEDA RESEARCH AND DEVELOPMENT Co. LTD. | Detecteur d'adn, a base de resistance a semiconducteur a commande moleculaire |
| CN103682098A (zh) * | 2013-09-11 | 2014-03-26 | 北京大学 | 一种抗体修饰的一维纳米材料晶体管器件及其构筑方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5017975A (en) * | 1988-07-15 | 1991-05-21 | Matsushita Electric Industrial Co., Ltd. | Organic electronic device with a monomolecular layer or multi-monomolecular layer having electroconductive conjugated bonds |
| EP0469243A1 (fr) * | 1990-07-31 | 1992-02-05 | Matsushita Electric Industrial Co., Ltd. | Dispositif organique et procédé pour sa fabrication |
| WO1998019151A1 (fr) * | 1996-10-29 | 1998-05-07 | Yeda Research And Development Co. Ltd. | Structures a semi-conducteurs hybrides organiques-inorganiques et capteurs bases sur lesdites structures |
| WO1999004440A1 (fr) * | 1997-07-14 | 1999-01-28 | Technion Research And Development Foundation Ltd. | Composants de micro-electronique et reseaux electroniques comportant de l'adn |
-
2000
- 2000-01-31 IL IL13429500A patent/IL134295A0/xx unknown
-
2001
- 2001-01-22 AU AU2001227025A patent/AU2001227025A1/en not_active Abandoned
- 2001-01-22 WO PCT/IL2001/000058 patent/WO2001057939A2/fr active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5017975A (en) * | 1988-07-15 | 1991-05-21 | Matsushita Electric Industrial Co., Ltd. | Organic electronic device with a monomolecular layer or multi-monomolecular layer having electroconductive conjugated bonds |
| EP0469243A1 (fr) * | 1990-07-31 | 1992-02-05 | Matsushita Electric Industrial Co., Ltd. | Dispositif organique et procédé pour sa fabrication |
| WO1998019151A1 (fr) * | 1996-10-29 | 1998-05-07 | Yeda Research And Development Co. Ltd. | Structures a semi-conducteurs hybrides organiques-inorganiques et capteurs bases sur lesdites structures |
| WO1999004440A1 (fr) * | 1997-07-14 | 1999-01-28 | Technion Research And Development Foundation Ltd. | Composants de micro-electronique et reseaux electroniques comportant de l'adn |
Non-Patent Citations (1)
| Title |
|---|
| MENON M ET AL: "FULLERENE-DERIVED MOLECULAR ELECTRONIC DEVICES" SEMICONDUCTOR SCIENCE AND TECHNOLOGY,GB,INSTITUTE OF PHYSICS. LONDON, vol. 13, no. 8A, 1 August 1998 (1998-08-01), pages A51-A54, XP000768865 ISSN: 0268-1242 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1425411A2 (fr) * | 1999-06-07 | 2004-06-09 | YEDA RESEARCH AND DEVELOPMENT Co. LTD. | Detecteur d'adn, a base de resistance a semiconducteur a commande moleculaire |
| EP1425411A4 (fr) * | 1999-06-07 | 2004-06-23 | Yeda Res & Dev | Detecteur d'adn, a base de resistance a semiconducteur a commande moleculaire |
| CN103682098A (zh) * | 2013-09-11 | 2014-03-26 | 北京大学 | 一种抗体修饰的一维纳米材料晶体管器件及其构筑方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| IL134295A0 (en) | 2001-04-30 |
| WO2001057939A3 (fr) | 2002-01-17 |
| AU2001227025A1 (en) | 2001-08-14 |
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