WO2001054266A3 - Mischerschaltung und -verfahren - Google Patents

Mischerschaltung und -verfahren Download PDF

Info

Publication number
WO2001054266A3
WO2001054266A3 PCT/DE2000/004212 DE0004212W WO0154266A3 WO 2001054266 A3 WO2001054266 A3 WO 2001054266A3 DE 0004212 W DE0004212 W DE 0004212W WO 0154266 A3 WO0154266 A3 WO 0154266A3
Authority
WO
WIPO (PCT)
Prior art keywords
mixer circuit
corresponding method
signals
drain
gate
Prior art date
Application number
PCT/DE2000/004212
Other languages
English (en)
French (fr)
Other versions
WO2001054266A2 (de
Inventor
Ulrich Schaper
Dieter Sewald
Original Assignee
Infineon Technologies Ag
Ulrich Schaper
Dieter Sewald
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag, Ulrich Schaper, Dieter Sewald filed Critical Infineon Technologies Ag
Priority to EP00993801A priority Critical patent/EP1252708A2/de
Publication of WO2001054266A2 publication Critical patent/WO2001054266A2/de
Publication of WO2001054266A3 publication Critical patent/WO2001054266A3/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/12—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes
    • H03D7/125—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes with field effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Superheterodyne Receivers (AREA)

Abstract

Mischerschaltung und -verfahren zum Mischen von Signalen mit einem MOSFET-Transistor mit Drain-, Gate-, Substrat- bzw. Body- und Source-Anschluss, wobei die zu mischenden Signale und das Ausgangssignal jeweils an einem eigenen Anschluss anliegen.
PCT/DE2000/004212 2000-01-21 2000-11-27 Mischerschaltung und -verfahren WO2001054266A2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP00993801A EP1252708A2 (de) 2000-01-21 2000-11-27 Mischerschaltung und -verfahren

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10002524 2000-01-21
DE10002524.2 2000-01-21

Publications (2)

Publication Number Publication Date
WO2001054266A2 WO2001054266A2 (de) 2001-07-26
WO2001054266A3 true WO2001054266A3 (de) 2001-12-06

Family

ID=7628283

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2000/004212 WO2001054266A2 (de) 2000-01-21 2000-11-27 Mischerschaltung und -verfahren

Country Status (2)

Country Link
EP (1) EP1252708A2 (de)
WO (1) WO2001054266A2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101085698B1 (ko) 2004-09-08 2011-11-22 조지아 테크 리서치 코오포레이션 주파수 혼합 장치
DE602005000772T8 (de) * 2004-09-08 2008-04-03 Samsung Electronics Co., Ltd., Suwon Frequenzumsetzer

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0551857A2 (de) * 1992-01-14 1993-07-21 Sumitomo Electric Industries, Ltd. Mischerschaltung mit pulsdotiertem GaAs MESFET
DE19642900A1 (de) * 1995-10-18 1997-04-24 Murata Manufacturing Co Mischer
EP0837556A1 (de) * 1996-10-21 1998-04-22 Lucent Technologies Inc. Hochfrequenzmischer-Einrichtung mit vier Anschlüssen
EP0959503A1 (de) * 1998-05-11 1999-11-24 Alcatel Alsthom Compagnie Générale d'Electricité Feldeffekt-Transistor, Steuerungsverfahren zum Steuern eines derartigen Feldeffekt-Transistors, und Frequenzmischer-Einrichtung, die einen derartigen Feldeffekt-Transistor beinhaltet

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0551857A2 (de) * 1992-01-14 1993-07-21 Sumitomo Electric Industries, Ltd. Mischerschaltung mit pulsdotiertem GaAs MESFET
DE19642900A1 (de) * 1995-10-18 1997-04-24 Murata Manufacturing Co Mischer
EP0837556A1 (de) * 1996-10-21 1998-04-22 Lucent Technologies Inc. Hochfrequenzmischer-Einrichtung mit vier Anschlüssen
EP0959503A1 (de) * 1998-05-11 1999-11-24 Alcatel Alsthom Compagnie Générale d'Electricité Feldeffekt-Transistor, Steuerungsverfahren zum Steuern eines derartigen Feldeffekt-Transistors, und Frequenzmischer-Einrichtung, die einen derartigen Feldeffekt-Transistor beinhaltet

Also Published As

Publication number Publication date
EP1252708A2 (de) 2002-10-30
WO2001054266A2 (de) 2001-07-26

Similar Documents

Publication Publication Date Title
FR2847077B1 (fr) Composants semi-conducteurs, et notamment de type soi mixtes, et procede de realisation
WO2007018944A3 (en) Gate electrode structures and methods of manufacture
EP0905902A3 (de) Konstantstrom-CMOS-Ausgangstreiberschaltung mit Dual-Gate-Transistoren
TW200503179A (en) Integration method of a semiconductor device having a recessed gate electrode
AU2003239560A1 (en) Microwave field effect transistor structure
AU2169200A (en) Transistor with notched gate
AU2002230624A1 (en) Trench gate fermi-threshold field effect transistors and methods of fabricating the same
FR2779293B1 (fr) Circuit de sortie a transistors
AU4081201A (en) Spin transistor
AU1470200A (en) Field effect transistor structure with abrupt source/drain junctions
ITRM20010203A0 (it) Rubinetto con incorporata valvola miscelatrice.
AU2003286194A1 (en) Floating gate transistors
EP1170802A3 (de) Halbletiergatter mit einer halbisolierenden Diffusionsbarriere
EP1246255A3 (de) Bipolartransistor mit isoliertem Gate und Verfahren zu dessen Herstellung
WO2001054266A3 (de) Mischerschaltung und -verfahren
WO2001095479A3 (en) Dual band fet mixer
WO2005045938A3 (en) Insulated gate field-effect transistor
AU2001295957A1 (en) Two-fluid mixing device
AU2002310269A1 (en) Mmic with off-chip bias feed system
EP1020921B8 (de) MOS Integrierte Schaltkreise aus Silizium für gemischte Signale
FR2802339B1 (fr) Transistor mos durcis
AU2001288239A1 (en) Integrated transistor devices
AU2002340557A1 (en) Bipolar transistor and method for producing the same
HK1102038A1 (en) Mixer arrangement, device comprising the same and method for mixing signals
TW200701241A (en) Shift-register circuit

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): JP KR US

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR

121 Ep: the epo has been informed by wipo that ep was designated in this application
AK Designated states

Kind code of ref document: A3

Designated state(s): JP KR US

AL Designated countries for regional patents

Kind code of ref document: A3

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
WWE Wipo information: entry into national phase

Ref document number: 2000993801

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 2000993801

Country of ref document: EP

WWR Wipo information: refused in national office

Ref document number: 2000993801

Country of ref document: EP

WWW Wipo information: withdrawn in national office

Ref document number: 2000993801

Country of ref document: EP

NENP Non-entry into the national phase

Ref country code: JP